CN105810773A - 一种谐振增强型热释电红外探测器 - Google Patents
一种谐振增强型热释电红外探测器 Download PDFInfo
- Publication number
- CN105810773A CN105810773A CN201610290352.4A CN201610290352A CN105810773A CN 105810773 A CN105810773 A CN 105810773A CN 201610290352 A CN201610290352 A CN 201610290352A CN 105810773 A CN105810773 A CN 105810773A
- Authority
- CN
- China
- Prior art keywords
- layer
- absorption layer
- infrared detector
- pyroelectric infrared
- metal absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract 4
- 229910052744 lithium Inorganic materials 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 8
- 238000002835 absorbance Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000005616 pyroelectricity Effects 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 108091027981 Response element Proteins 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610290352.4A CN105810773B (zh) | 2016-05-05 | 2016-05-05 | 一种谐振增强型热释电红外探测器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610290352.4A CN105810773B (zh) | 2016-05-05 | 2016-05-05 | 一种谐振增强型热释电红外探测器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105810773A true CN105810773A (zh) | 2016-07-27 |
CN105810773B CN105810773B (zh) | 2017-08-25 |
Family
ID=56455251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610290352.4A Expired - Fee Related CN105810773B (zh) | 2016-05-05 | 2016-05-05 | 一种谐振增强型热释电红外探测器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105810773B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111883643A (zh) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微***与信息技术研究所 | 一种可集成式中红外光探测器及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1328347A (zh) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | 具有平顶和陡边响应的半导体光电探测器及实现方法 |
US6495828B1 (en) * | 2000-04-17 | 2002-12-17 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate |
CN101958362A (zh) * | 2009-07-17 | 2011-01-26 | 北京邮电大学 | 纳米波导结构半导体光探测器制备方法 |
CN102848637A (zh) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | 一种复合多层膜红外吸收层 |
CN103259097A (zh) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | 一种太赫兹超材料单元结构及其制备与调控方法 |
CN103682076A (zh) * | 2013-12-18 | 2014-03-26 | 电子科技大学 | 一种甚长波热释电红外单元探测器 |
CN105004430A (zh) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | 一种非制冷红外焦平面探测器的光电敏感单元 |
-
2016
- 2016-05-05 CN CN201610290352.4A patent/CN105810773B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495828B1 (en) * | 2000-04-17 | 2002-12-17 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric/pyroelectric infrared detector with a colossal magneto-resistive electrode material and rock salt structure as a removable substrate |
CN1328347A (zh) * | 2001-07-11 | 2001-12-26 | 北京邮电大学 | 具有平顶和陡边响应的半导体光电探测器及实现方法 |
CN101958362A (zh) * | 2009-07-17 | 2011-01-26 | 北京邮电大学 | 纳米波导结构半导体光探测器制备方法 |
CN102848637A (zh) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | 一种复合多层膜红外吸收层 |
CN103259097A (zh) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | 一种太赫兹超材料单元结构及其制备与调控方法 |
CN103682076A (zh) * | 2013-12-18 | 2014-03-26 | 电子科技大学 | 一种甚长波热释电红外单元探测器 |
CN105004430A (zh) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | 一种非制冷红外焦平面探测器的光电敏感单元 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111883643A (zh) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微***与信息技术研究所 | 一种可集成式中红外光探测器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105810773B (zh) | 2017-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Stewart et al. | Ultrafast pyroelectric photodetection with on-chip spectral filters | |
Lochbaum et al. | Compact mid-infrared gas sensing enabled by an all-metamaterial design | |
US8593229B2 (en) | Atomic oscillator | |
US20100102893A1 (en) | Physical section of atomic oscillator | |
CN103575407A (zh) | 一种太赫兹辐射探测器 | |
CN101063630A (zh) | 一种基于微桥谐振器的红外探测器结构及制作方法 | |
US20130134309A1 (en) | Nonlinear optical and electro-optical devices and methods of use thereof for amplification of non-linear properties | |
CN102998725B (zh) | 用于吸收太赫兹辐射的粗糙黑化金属薄膜及其制备方法 | |
CN103682076B (zh) | 一种甚长波热释电红外单元探测器 | |
CN106911055B (zh) | 一种采用管式恒温炉及冷却套管的四波混频汞蒸气池 | |
Gou et al. | Spiral antenna-coupled microbridge structures for THz application | |
CN109916853A (zh) | 基于光纤光栅的激光红外光谱痕量物质探测装置及方法 | |
KR20140143326A (ko) | 테라헤르츠파 검출 장치, 카메라, 이미징 장치 및 계측 장치 | |
CN103035983B (zh) | 一种太赫兹辐射吸收层及其制备方法 | |
CN105810773A (zh) | 一种谐振增强型热释电红外探测器 | |
CN107907237B (zh) | 一种光学吸收型温度传感器 | |
JP6269008B2 (ja) | 電磁波−表面ポラリトン変換素子。 | |
CN105789428B (zh) | 一种复合吸收层热释电红外探测器 | |
Agranat et al. | Inertialess metal glow produced by picosecond pulses | |
US10254169B2 (en) | Optical detector based on an antireflective structured dielectric surface and a metal absorber | |
CN106374323A (zh) | 一种激光上转化太赫兹差频源探测*** | |
CN113218869A (zh) | 基于表面改性共振音叉和原子力探针的中远红外光学探测***及方法 | |
RU2650430C1 (ru) | Приемник ИК- и ТГц-излучений | |
CN111442849B (zh) | 一种微型近红外探测器的制作方法及微型近红外探测器 | |
Luo et al. | Metamaterial Signal Sensing Based on Continuous Terahertz Waves |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Liang Zhiqing Inventor after: Wang Tao Inventor after: Ma Zhendong Inventor after: Wu Liuquan Inventor after: Liu Ziji Inventor before: Liu Ziji Inventor before: Liang Zhiqing Inventor before: Ma Zhendong Inventor before: Wu Liuquan Inventor before: Wang Tao |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170825 Termination date: 20180505 |
|
CF01 | Termination of patent right due to non-payment of annual fee |