CN105798733A - Target recovery method - Google Patents
Target recovery method Download PDFInfo
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- CN105798733A CN105798733A CN201410855475.9A CN201410855475A CN105798733A CN 105798733 A CN105798733 A CN 105798733A CN 201410855475 A CN201410855475 A CN 201410855475A CN 105798733 A CN105798733 A CN 105798733A
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- target
- backboard
- bistrique
- object stage
- recovery method
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Abstract
The invention discloses a target recovery method. A target module is provided, and includes a back plate and a target connected with the back plate; a grinding machine is provided, and has a carrying table and a grinding head; a tabletop of the carrying table is opposite to a grinding surface of the grinding head; the target module is put on the carrying table; the target is contacted with the carrying table; the grinding head is contacted with the back plate; and at least one of the carrying table and the grinding head rotates to separate the back plate from the target. The method can reduce the target recovery cost, and can recover thinner targets after magnetron sputtering.
Description
Technical field
The present invention relates to field of semiconductor fabrication, particularly relate to the recovery method of a kind of target.
Background technology
Magnetron sputtering is that electronics accelerates to fly under the effect of electric field in the process of substrate and collides with ar atmo, ionize out substantial amounts of argon ion and electronics, electronics flies to substrate, argon ion accelerates the target on the target material assembly on bombardment sputtering base station under the effect of electric field, sputter substantial amounts of target atom, it is deposited on substrate in neutral target atom (or molecule) film forming, and is finally reached the purpose to substrate surface plated film.
Target material assembly is that the backboard being welded to connect by the target meeting sputtering performance and target is constituted.Backboard plays a supportive role in target material assembly, and has effect of conduction heat.
In prior art, the recovery method of the target material assembly through above-mentioned magnetron sputtering is as follows:
First with lathe, major part backboard is carried out turning, then again the target having residual back veneer material is carried out milling, in order to the residual back veneer material on target is removed clean.
But, the method reclaiming target adopting prior art is relatively costly, and, it is impossible to the target that after recovery magnetron sputtering, thickness is less.
Summary of the invention
The method that the problem that this invention address that is the recovery target adopting prior art is relatively costly, and, it is impossible to the target that after recovery magnetron sputtering, thickness is less.
For solving the problems referred to above, the present invention provides the recovery method of a kind of target, including:
Thering is provided target material assembly, described target material assembly includes backboard and the target being connected with described backboard；
Thering is provided grinding machine, described grinding machine has object stage and bistrique, and the table top of described object stage is relative with the grinding face of described bistrique, is placed on described object stage by described target material assembly, and described target contacts with described object stage, and described bistrique contacts with described backboard；
Described object stage rotates with at least one in described bistrique to described backboard and separates with described target.
Optionally, described object stage rotates with at least one in described bistrique to described backboard to separate with described target and includes:
Described object stage is contrary with the direction of rotation of described bistrique, or,
Described object stage is identical with the direction of rotation of described bistrique, and, described object stage is different from the rotary speed of described bistrique, or,
Described object stage rotates with at least one in described bistrique, and another is static.
Optionally, described table top is parallel with described grinding face.
Optionally, described grinding machine is column circular grinder.
Optionally, the model in described grinding face is less than or equal to No. 600.
Optionally, the rotating speed of described bistrique is be more than or equal to 780r/min and less than or equal to 1180r/min.
Optionally, the amount of feeding of described bistrique is be more than or equal to 0.1mm/min and less than or equal to 0.16mm/min.
Optionally, the material of described target is metal.
Optionally, the material of described target is tantalum.
Optionally, the purity of described target is be more than or equal to 99.9%.
Compared with prior art, technical scheme has the advantage that
Described target material assembly is placed on described object stage, described target contacts with described object stage, described bistrique contacts with described backboard, object stage is arranged to contrary direction of rotation with described bistrique, by the bistrique of grinding machine, backboard is applied the torsion in a direction, by object stage, target is applied rightabout torsion, it is possible to achieve the tantalum target in target material assembly separates with backboard.The method adopting the present invention, it is convenient to omit the recovery process step that turning and milling etc. are complicated, replaces with simple grinding process, thus improve process efficiency, simplifying recovery process step, saving process costs.It addition, the method for the employing present invention is also less to the damage of backboard, it is possible to backboard is carried out recycling, reduce further process costs.Furthermore, the method adopting the present invention, it is also possible to realize separating the less target of thickness after magnetron sputtering and backboard.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the target material assembly needing to reclaim in the specific embodiment of the invention；
Fig. 2 is the schematic diagram adopting the bistrique of grinding machine that the target material assembly of Fig. 1 carries out grinding；
Fig. 3 is the structural representation that target material assembly is separated into target and backboard.
Detailed description of the invention
Through finding and analyzing, when adopting the method for prior art to reclaim target, it is necessary to first backboard is carried out turning, backboard becomes back veneer material bits in the process of turning, and therefore, the method for prior art cannot reclaim backboard, relatively costly.
Additionally, when target material assembly is after magnetron sputtering, and remaining its thickness is very little, after removing major part backboard by the method for turning, the target material assembly more slightly larger than its thickness is easy to be separated from fixture and flies out, so that the potential safety hazard of operator is greatly increased.
When the material of target is tantalum metal, tantalum metal hardness is high and viscosity is big.Turning target material assembly so that it is thickness soon equal to its thickness time, turning cutting tool can contact with tantalum metal, this contact can badly damaged turning cutting tool, can increase recycling target material assembly cost, lose more than gain.
After major part backboard is removed by the method adopting turning, when the tantalum target with residual back veneer material is carried out milling, the viscosity of tantalum target is big, can deform.So that with the tantalum target surface irregularity of residual back veneer material, say, that uneven.During Milling Process, it may appear that it is long that the back veneer material of recess removes the time, the phenomenon that the removed thickness of tantalum target at convex place is many, so, in prior art, reclaim tantalum target method by duration, inefficiency, the thickness of the tantalum target of recovery is very little again.
For solving above-mentioned technical problem, the present invention provides the recovery method of a kind of target material assembly, adopts the recovery method of the target material assembly of the present invention, it is possible to reduces the cost reclaiming target, and also can realize the recovery of the target that thickness is less.
Understandable for enabling the above object and advantages of the present invention to become apparent from, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
With reference to Fig. 1, it is provided that target material assembly 20, described target material assembly 20 includes backboard 201 and the target 202 being connected with described backboard.
Connection between its dorsulum 201 with target 202 is for welding.Specific as follows:
Backboard 201 is cylinder, including the backboard bottom surface that backboard solder side is relative with backboard solder side, the backboard side between backboard solder side, backboard bottom surface.
Target 202 is cylinder, including target solder side, the target as sputter face relative with target solder side, the target side between target solder side, target as sputter face.
Backboard solder side and target solder side are welded to connect, to realize being welded to connect of target and backboard.
Target material in the present embodiment is tantalum.The viscosity of tantalum target is big, hardness is big.In other embodiments, described target can also be the metal of other materials.Such as aluminum, aluminium alloy, titanium, titanium alloy, tungsten, tungsten alloy, copper or copper alloy etc..
Then, with reference to Fig. 2, grinding machine 30 is provided, described grinding machine 30 has object stage 31 and bistrique 32, the table top 311 of described object stage 31 is relative with the grinding face 321 of described bistrique 32, being placed on described object stage 31 by described target material assembly 20, described target 202 contacts with described object stage 31, and described bistrique 32 contacts with described backboard 201.Specific as follows:
In the present embodiment, described grinding machine is column circular grinder.The table top 311 of object stage 31 is parallel with the grinding face 321 of bistrique 32.When target material assembly 20 is placed on object stage 31, the deck contact of described target as sputter face and object stage 31, the grinding face 321 of bistrique 32 contacts with backboard bottom surface.In the present embodiment, the whole plane in grinding face has ore grain for grinding backboard, and the model in described grinding face is less than or equal to No. 600.Wherein, the model in grinding face less than or equal to the number of the ore grain that can arrange in No. 600 unit ares referring to grinding face less than or equal to 600.
Then, being arranged to turn clockwise by object stage 31, the rotating speed of described object stage is be more than or equal to 50r/min and less than or equal to 100r/min.Bistrique is arranged to rotation counterclockwise, and the rotating speed of described bistrique is that the amount of feeding of described bistrique is be more than or equal to 0.1mm/min and less than or equal to 0.16mm/min be more than or equal to 780r/min and less than or equal to 1180r/min.
After backboard is ground 0.3mm～0.5mm, tantalum target will separate (with reference to Fig. 3) with backboard.
In the present embodiment, object stage is contrary with described bistrique direction of rotation, and backboard is applied the torsion in a direction by the bistrique of grinding machine, by object stage, target is applied rightabout torsion, it is possible to achieve the tantalum target in target material assembly separates with backboard.Therefore, the method adopting the present invention, it is convenient to omit the recovery process step that turning and milling etc. are complicated, replaces with simple grinding process, thus improve process efficiency, simplifying recovery process step, saving process costs.It addition, adopt the method for the present invention to be possible not only to realize target is recycled, also that the damage of backboard is less, it is possible to backboard to be carried out recycling, reduce further process costs.Furthermore, the method adopting the present invention, it is also possible to realize separating the less target of thickness after magnetron sputtering and backboard.
Further, in the present embodiment, object stage 31 is being arranged on the basis of contrary direction of rotation with described bistrique 32, can also by the rotating speed of object stage 31 and bistrique 32 being arranged to above-mentioned scope, the model in the grinding face 321 of bistrique 32 being arranged to above-mentioned scope, is arranged to above-mentioned by the amount of feeding of bistrique 32, can realize the most efficiently, save most the mode of backboard stock removal, target 202 and the backboard 201 that material is tantalum is easily separated.And the loss of grinding machine is accomplished minimum.
If particularly as follows: the model in grinding face 321 is too big, when bistrique 32 and object stage 31 carry out rightabout rotate time, the frictional force that backboard is applied, namely torsion is not enough, then backboard 201 can be ground a lot, could realize separating of target 202 and backboard 201.Now, the backboard after separation is sized too small, and time serious, the value of recycling is little.
If the rotating speed of the rotating speed of object stage 31 or bistrique 32 is too big, bistrique 32 is easily damaged.If the rotating speed of the rotating speed of object stage 31 or bistrique 32 is too little, makes the time that target 202 separates with backboard 201 lengthen, affect separation efficiency.
If the amount of feeding of bistrique 32 is too big, in target 202 with backboard 201 separation process, the loss of backboard 201 is also big, it addition, the loss of bistrique 32 is also big.If the amount of feeding of bistrique 32 is too little, then the time separated with backboard 201 by target 202 lengthens so that separating effect is low.
In the present embodiment, after target separates with backboard, being possible not only to recycle target 201, backboard 202 can also be recycled, to save cost.Further, why target 202 is contacted with object stage 31, backboard 201 is contacted with bistrique 32, so that target 202 is not ground and impaired, or, it is possible to the loss amount of maximized reduction target 202.The setting of above-mentioned each parameter, it is possible to while improving separation efficiency, the stock removal of maximized reduction backboard and the loss of maximized minimizing grinding machine.Therefore, it is possible to realize maximized reduction separation costs.
In other embodiments, described object stage counterclockwise rotates, and described bistrique is rotated clockwise, and also can realize separating of target and backboard.
In other embodiments, as long as it is contrary with the direction of rotation of bistrique to meet object stage, also target and backboard can be easily separated, fall within protection scope of the present invention.
In other embodiments; under meeting the premise that object stage is contrary with the direction of rotation of bistrique; as long as meeting at least one condition of the model in above-mentioned grinding face, the rotating speed of object stage, the rotating speed of bistrique, described grinding wheel feed amount; also can realize being easily separated target and backboard, fall within protection scope of the present invention.
In other embodiments, described object stage is identical with the direction of rotation of described bistrique, and, described object stage is different from the rotary speed of described bistrique falls within protection scope of the present invention.
In other embodiments, in described object stage and described bistrique, at least one rotates, and another is static, it is also possible to target and backboard is easily separated, falls within protection scope of the present invention.
In other embodiments, if the backboard in target material assembly has backboard groove, target embeds backboard groove, when backboard recess sidewall is relative with target sidewall.Such target material assembly is put into grinding machine and carries out the lock out operation of target and backboard.Even if bistrique is different from the direction of rotation of object stage, separating of target and backboard can not be realized.Because the torsion in another direction that target applies is disperseed by the torsion in the direction that backboard is applied by bistrique and object stage, arrive target very little with the torsion of backboard solder side, be not enough to be easily separated target and backboard.
Accordingly, it would be desirable to first the recess sidewall turning of backboard removed, so that target exposes, form target material assembly as shown in Figure 1.Or, first turning backboard, make the size size equal to or less than target of backboard.Again the target material assembly after turning is put into grinding machine, it is achieved target separates with backboard, falls within protection scope of the present invention.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, not separating in the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. the recovery method of a target, it is characterised in that
Thering is provided target material assembly, described target material assembly includes backboard and the target being connected with described backboard；
Thering is provided grinding machine, described grinding machine has object stage and bistrique, and the table top of described object stage is relative with the grinding face of described bistrique, is placed on described object stage by described target material assembly, and described target contacts with described object stage, and described bistrique contacts with described backboard；
Described object stage rotates with at least one in described bistrique to described backboard and separates with described target.
2. recovery method as claimed in claim 1, it is characterised in that described object stage rotates with at least one in described bistrique to described backboard to separate with described target and includes:
Described object stage is contrary with the direction of rotation of described bistrique, or,
Described object stage is identical with the direction of rotation of described bistrique, and, described object stage is different from the rotary speed of described bistrique, or,
Described object stage rotates with at least one in described bistrique, and another is static.
3. recovery method as claimed in claim 1, it is characterised in that described table top is parallel with described grinding face.
4. recovery method as claimed in claim 1, it is characterised in that described grinding machine is column circular grinder.
5. recovery method as claimed in claim 4, it is characterised in that the model in described grinding face is less than or equal to No. 600.
6. recovery method as claimed in claim 4, it is characterised in that the rotating speed of described bistrique is be more than or equal to 780r/min and less than or equal to 1180r/min.
7. recovery method as claimed in claim 4, it is characterised in that the amount of feeding of described bistrique is be more than or equal to 0.1mm/min and less than or equal to 0.16mm/min.
8. recovery method as claimed in claim 1, it is characterised in that the material of described target is metal.
9. recovery method as claimed in claim 8, it is characterised in that the material of described target is tantalum.
10. recovery method as claimed in claim 1, it is characterised in that the purity of described target is be more than or equal to 99.9%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410855475.9A CN105798733B (en) | 2014-12-31 | 2014-12-31 | The recovery method of target |
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| CN201410855475.9A CN105798733B (en) | 2014-12-31 | 2014-12-31 | The recovery method of target |
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| CN105798733A true CN105798733A (en) | 2016-07-27 |
| CN105798733B CN105798733B (en) | 2018-10-30 |
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| CN109207729A (en) * | 2018-09-03 | 2019-01-15 | 宁波创润新材料有限公司 | A kind of sputtering target material recovery method |
| CN109570188A (en) * | 2018-11-14 | 2019-04-05 | 罗源县中房镇人民政府 | A kind of waste target processing recovery method |
| CN110091178A (en) * | 2019-04-29 | 2019-08-06 | 河南东微电子材料有限公司 | A kind of recovery system and its recovery process of magnetron sputtering target |
| CN111377084A (en) * | 2018-12-28 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Mechanical auxiliary tool and method for packaging target material by using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111377084A (en) * | 2018-12-28 | 2020-07-07 | 宁波江丰电子材料股份有限公司 | Mechanical auxiliary tool and method for packaging target material by using same |
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| CN105798733B (en) | 2018-10-30 |
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