CN105789416A - Multilayer three-dimensional grid light-emitting layer preparation technology and LED light-emitting device - Google Patents
Multilayer three-dimensional grid light-emitting layer preparation technology and LED light-emitting device Download PDFInfo
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- CN105789416A CN105789416A CN201610291148.4A CN201610291148A CN105789416A CN 105789416 A CN105789416 A CN 105789416A CN 201610291148 A CN201610291148 A CN 201610291148A CN 105789416 A CN105789416 A CN 105789416A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Abstract
The invention discloses a multilayer three-dimensional grid light-emitting layer preparation technology and an LED light-emitting device. The technology comprises the steps of coating of light-emitting material, heating, filling of transparent heat conducting material and thorough curing through heating. The LED light-emitting device comprises a bracket (1), a chip (2), a multilayer three-dimensional grid light-emitting layer (3), a sealing structure (4), the transparent heat conducting material (5) and protective material (6). The multilayer three-dimensional grid light-emitting layer preparation technology is adopted so that mutual absorption of various materials can be effectively avoided; multi-protection can be performed on the surface of the light-emitting layer, especially the quantum dot light-emitting material, by the transparent heat conducting material, a waterproof and anti-oxygen coating layer and an inorganic sealing lens so that the effects of stabilizing color spots, maintaining the lighting effect and prolonging the service life can be achieved; and the material of great light transmission and heat conduction is filled between grids so that excited light energy can be effectively utilized, the overall heat of the device can be reduced, the lighting effect can be enhanced, the service life can be prolonged and long-term reliability can be acquired.
Description
Technical field
The invention belongs to technology of semiconductor illumination application field, particularly to a kind of luminescent layer preparation technology and LED.
Background technology
LED light source is as a new generation's illuminating product, its mode realizing white light mainly has following three kinds: one is that RGB three-primary color LED chip package is produced white light together, the second is to excite yellow fluorescent powder or red green fluorescence powder to form white light by blue chip, and the third is to utilize ultraviolet chip to excite RGB three-color phosphor to realize white light.But due to the restriction of current chip, fluorescent material and packaging technology, all there is certain deficiency in three kinds of modes: in method one, three kinds of chips is different with driving electric current, photochromic change and attenuation, is difficult to unified, and manufacturing cost is higher；Method second exist light efficiency, aobvious refer to low, fluorescent powder grain skewness, the problems such as exciting light energy loss and color drift are serious, a little bigger glue difficulty of high colour gamut colloid viscosity；Method three is then because light-emitting phosphor efficiency is low, and the problem such as mixed powder difficulty, there is ultraviolet shortwave reveals, and the hidden danger such as aging life-span is short.In LED commodity production, the mode of main using method two reaches the purpose of white light, and how fluorescent material mix homogeneously is improved its utilization ratio, how to specify that the spatial distribution of fluorescent material improves the fluorescent material utilization rate to exciting light, thus it is wider to obtain spectral region, aobvious referring to height, the colour-stable LED of light is a difficult problem urgently to be resolved hurrily in production process.
In recent years, the development of quantum dot makes it be widely used in the new high-tech industry such as life sciences, semiconductor device, in order to make up or to substitute rare earth doping fluorescent powder deficiency in energy level distribution and luminous efficiency.Quantum dot is made up of a limited number of atom, and three dimensions are nanoscale, has wider excitation spectrum and narrower emission spectrum, and can control the emission peak positions of emission spectrum by changing the size dimension of quantum dot.Meanwhile, bigger Stokes shift also makes the emission spectrum of quantum dot and excitation spectrum not easily overlapping.
The above-mentioned character of fluorescent material it is better than for quantum dot, LED encapsulation use quantum dot replacing whole or part substitute fluorescent material as luminescent layer, it is mixed or is fabricated to multiple-layer stacked form, to obtaining spectral region height, the aobvious LED referring to that height, light are colour-stable by the addition of various sizes of quantum dot.But, owing to there is the mutual absorption of spectrum between fluorescent material, between quantum dot, spectrum absorbs mutually, the mutual absorption of spectrum between fluorescent material quantum dot, the exciting light making chip can not be used effectively, and causes the waste of fluorescent material, quantum dot and energy, and the photochromic effect that actual displayed goes out is not good.
Summary of the invention
It is an object of the invention to: a kind of layer stereo grid luminescent layer preparation technology and LED are provided, addition by various sizes of quantum dot and fluorescent material, build layer stereo grid luminescent layer, obtain spectral region height, aobvious refer to high, light is colour-stable, the LED of life-span length.
The technical scheme is that a kind of layer stereo grid luminescent layer preparation technology, comprise the following steps:
A. luminescent material is coated in inside chip surface and bowl with aperture plate form；
B. heating makes luminescent material precuring inside chip surface and bowl；
C. filling the transparent Heat Conduction Material of light transparent, logical, good heat conductivity between aperture plate space, height is identical with luminescent material grid height or slightly higher；
D. heating makes the transparent Heat Conduction Material precuring of filling；
E. step A is repeated to step D, until filling up inside bowl；
F. heating makes luminescent material and transparent Heat Conduction Material be fully cured inside bowl.
Further, the luminescent material in described step A is mixed by fluorescent material and organic material or inorganic material or organic/inorganic composite material.
Further, the luminescent material in described step A is quantum dot and organic material or inorganic material or organic/inorganic composite material mix.
Further, the luminescent material in described step A is after fluorescent material and quantum dot mixing, then mixes with organic material or inorganic material or organic/inorganic composite material.
Further, in described step A, coating method is a glue, spraying or silk screen printing.
Further, the material that the transparent Heat Conduction Material in described step C is light transparent, logical, heat conductivility is good, it is preferable that transparent silica gel, resin or aluminium oxide；Transparent Heat Conduction Material can also comprise a small amount of luminescent material.
Further, aperture plate form in described step A is: every layer of arrangement can be the array of equally distributed array or non-uniform Distribution, uniform or non-uniform Distribution the aperture plate height of each monolayer can be adjusted according to the difference using luminescent material, the grid height of same layer can identical also can there are differences, between each layer aperture plate, interval is not limit, adjacent two layers aperture plate angle is be more than or equal to 0 ° and less than or equal to 90 °, and when the number of plies is be more than or equal to 2, overall structure occurs with three-dimensional grid.
Further, the luminescent material (3) used with each region of each monolayer of aperture plate form coating in described step A can for same material or non-same material, its particle diameter can be relatively uniform or inconsistent, and the luminescent material (3) of coated monolayer can be uniformly distributed or non-uniform Distribution is in organic material or inorganic material or organic/inorganic composite material.
A kind of LED light emitter, it includes: chip, use the layer stereo grid luminescent layer that above-mentioned technique obtains；Described chip is used for exciting described layer stereo grid luminescent layer luminous.
Further, also including support, described support is used for supporting the described chip of protection and layer stereo grid luminescent layer.
Further, described support is the bowl with certain depth, has good thermal conduction characteristic, and support bowl cross sectional shape is rectangle, trapezoidal or irregularly shaped.
Further, in described bowl, the coat of metal is Ag, Cu, Au or other alloy layer.
Further, the luminescence peak of the exciting light that described chip produces is blue light, purple light or ultraviolet band.
Further, described chip structure is vertical stratification or horizontal structure.
Further, described layer stereo grid luminescent layer surface-coated has protection material, and described protection material is for protecting the impact for luminescent material of the water oxygen.
Further, also including the sealing structure being arranged on described protection material surface, described sealing structure uses quartz plate glass or quartz glass lens, for improving the impact for luminescent material of spatial light color uniformity and protection water oxygen.
The present invention can be prevented effectively from the mutual absorption of various material, the especially red light quantum point material spectral absorption to its all band luminescent material；For high colour gamut product, using the multiple fluorescent material of big concentration for reaching high colour gamut purpose, this can cause fluorescent glue viscosity excessive, and glue amount is wayward, not easily puts glue；Adopt this kind of structure to make silica gel only need to mix single fluorescent material, greatly reduce fluorescent glue viscosity, make glue amount more easy to control, facilitate the carrying out of gluing process；For quanta point material, water oxygen is the main cause of its light decay, and this kind of structure effectively can carry out multiple protective on quantum dot light emitting layer surface by silica gel and water oxygen resistant coating and inorganic sealing lens, reaches stable color dot, maintains the effect of light efficiency, life-saving；Provide a kind of many sizes, how photochromic mixed powder pattern, the fluorescent material making different-grain diameter and photochromic material is able to effective mixing, avoid the layering that causes of mixing of different-grain diameter powder body and go out light and energy dissipation, provide a kind of implementation for the colour developing of full spectrum height；By filling the logical material that light is good, heat conduction is good between grid, not only make exciting light luminous energy to be effectively utilized but also device entirety heat can be made to reduce simultaneously, promote light efficiency, life-saving, it is thus achieved that long-term reliability.
Accompanying drawing explanation
Fig. 1 is layer stereo grid luminescent layer top view of the present invention；
Fig. 2 is the structural representation that the present invention uses protection material；
Fig. 3 is that the present invention uses quartz plate glass to form the structural representation of nearly sealing；
Fig. 4 is the structural representation that the present invention uses that quartz glass lens forming closely seals；
Fig. 5 is the unsupported schematic diagram of the present invention.
1-support, 2-chip, 3-luminescent material, 4-sealing structure, the transparent Heat Conduction Material of 5-, 6-protect material
Detailed description of the invention
Embodiment 1: referring to Fig. 1 to Fig. 5, a kind of layer stereo grid luminescent layer preparation technology, comprise the following steps:
A. luminescent material 3 is coated in inside chip 2 surface and bowl by modes such as some glue, spraying or silk screen printings with aperture plate form；Described luminescent material 3 is after fluorescent material and quantum dot mixing, then mixes with organic material or inorganic material or organic/inorganic composite material；Described aperture plate form is every layer of arrangement can be the array of equally distributed array or non-uniform Distribution, uniform or non-uniform Distribution the aperture plate height of each monolayer can be adjusted according to the difference using luminescent material 3, the grid height of same layer can identical also can there are differences, between each layer aperture plate, interval is not limit, adjacent two layers aperture plate angle be more than or equal to 0 ° and less than or equal to 90 ° when the number of plies is be more than or equal to 2 overall structure occur with three-dimensional grid；Can for same material or non-same material with the luminescent material that each region of each monolayer of aperture plate form coating uses, its particle diameter can be relatively uniform or inconsistent, and the luminescent material of coated monolayer can be uniformly distributed or non-uniform Distribution is in organic material or inorganic material or organic/inorganic composite material；
B. heating makes luminescent material 3 precuring inside chip 2 surface and bowl；
C. filling the transparent Heat Conduction Material 5 of light transparent, logical, good heat conductivity between aperture plate space, height is identical or slightly higher with luminescent material 3 grid height；The material that described transparent Heat Conduction Material 5 is light transparent, logical, heat conductivility is good, it is preferable that transparent silica gel, resin or aluminium oxide, transparent Heat Conduction Material 5 can also comprise a small amount of luminescent material 3；
D. heating makes transparent Heat Conduction Material 5 precuring of filling inside chip 2 surface and bowl；
E. step A is repeated to step D, until filling up inside bowl；
F. heating makes luminescent material 3 and transparent Heat Conduction Material 5 be fully cured inside bowl.
Embodiment 2: referring to Fig. 1 to Fig. 5, a kind of LED, it uses above-mentioned layer stereo grid luminescent layer preparation technology, including: support 1, chip 2, layer stereo grid luminescent layer, sealing structure 4, transparent Heat Conduction Material 5, protection material 6.
Described support 1 is used for supporting protection described chip 2, described layer stereo grid luminescent layer；Described support 1 is the bowl with certain depth, has good thermal conduction characteristic, and support bowl cross sectional shape is rectangle, trapezoidal or irregularly shaped；In described bowl, the coat of metal is Ag, Cu, Au or other alloy layers.
Described chip 2 is used for exciting described layer stereo grid luminescent layer luminous, and luminescence peak is blue light, purple light or ultraviolet band；Described chip 2 structure is vertical stratification or horizontal structure.
Layer stereo grid luminescent layer is the layer stereo grid luminescent layer that embodiment 1 preparation technology obtains.
Described layer stereo grid luminescent layer surface-coated has protection material 6, and described protection material 6 is for protecting the impact for luminescent material 3 of the water oxygen.
It is arranged on the described sealing structure 4 on described protection material 6 surface, uses quartz plate glass or quartz glass lens, for improving the impact for luminescent material 3 of spatial light color uniformity and protection water oxygen.
Claims (16)
1. a layer stereo grid luminescent layer preparation technology, it is characterised in that comprise the following steps:
A. luminescent material (3) is coated in inside chip (2) surface and bowl with aperture plate form；
B. heating makes luminescent material (3) precuring inside chip (2) surface and bowl；
C. filling the transparent Heat Conduction Material (5) of light transparent, logical, good heat conductivity between aperture plate space, height is identical or slightly higher with luminescent material (3) grid height；
D. heating makes transparent Heat Conduction Material (5) precuring of filling；
E. step A is repeated to step D, until filling up inside bowl；
F. heating makes luminescent material (3) and transparent Heat Conduction Material (5) be fully cured inside bowl.
2. a kind of layer stereo grid luminescent layer preparation technology as claimed in claim 1, it is characterised in that: the luminescent material (3) in described step A is mixed by fluorescent material and organic material or inorganic material or organic/inorganic composite material.
3. layer stereo grid luminescent layer preparation technology as claimed in claim 1 a kind of, it is characterised in that: the luminescent material (3) in described step A mixes for quantum dot and organic material or inorganic material or organic/inorganic composite material.
4. a kind of layer stereo grid luminescent layer preparation technology as claimed in claim 1, it is characterized in that: after the luminescent material (3) in described step A mixes for fluorescent material and quantum dot, then mix with organic material or inorganic material or organic/inorganic composite material.
5. a kind of layer stereo grid luminescent layer preparation technology as claimed in claim 1, it is characterised in that: in described step A, coating method is some glue, spraying or silk screen printing.
6. a kind of layer stereo grid luminescent layer preparation technology as claimed in claim 1, it is characterized in that: the material that the transparent Heat Conduction Material (5) in described step C is light transparent, logical, heat conductivility is good, or comprise a small amount of luminescent material (3), it is preferable that transparent silica gel, resin or aluminium oxide.
7. a kind of layer stereo grid luminescent layer preparation technology as claimed in claim 1, it is characterized in that: the aperture plate form in described step A is: every layer of arrangement is the array of equally distributed array or non-uniform Distribution, uniform or non-uniform Distribution the aperture plate height of each monolayer is adjusted according to the difference using luminescent material (3), the grid height of same layer can identical also can there are differences, between each layer aperture plate, interval is not limit, adjacent two layers aperture plate angle is be more than or equal to 0 ° and less than or equal to 90 °, and when the number of plies is be more than or equal to 2, overall structure occurs with three-dimensional grid.
8. a kind of layer stereo grid luminescent layer preparation technology as claimed in claim 7, it is characterized in that: the luminescent material (3) used with each region of each monolayer of aperture plate form coating in described step A is for same material or non-same material, its particle diameter is relatively uniform or inconsistent, and the luminescent material (3) of coated monolayer is uniformly distributed or non-uniform Distribution is in organic material or inorganic material or organic/inorganic composite material.
9. a LED, including: chip (2), it is characterised in that: it uses the layer stereo grid luminescent layer that in claim 1 to 10, any technique obtains；Described chip (2) is used for exciting described layer stereo grid luminescent layer luminous.
10. a kind of LED as claimed in claim 9, it is characterised in that also include: support (1)；Described support (1) is used for supporting the described chip of protection and layer stereo grid luminescent layer.
11. LED as claimed in claim 10 a kind of, it is characterised in that: described support (1) is the bowl with certain depth, has good thermal conduction characteristic, and support bowl cross sectional shape is rectangle, trapezoidal or irregularly shaped.
12. a kind of LED as claimed in claim 11, it is characterised in that: in described bowl, the coat of metal is Ag, Cu, Au or other alloy layers.
13. a kind of LED as claimed in claim 10, it is characterised in that: the luminescence peak of the exciting light that described chip (2) produces is blue light, purple light or ultraviolet band.
14. a kind of LED as claimed in claim 10, it is characterised in that: described chip (2) structure is vertical stratification or horizontal structure.
15. a kind of LED as claimed in claim 11; it is characterized in that: described layer stereo grid luminescent layer surface-coated has protection material (6), and described protection material (6) is used for the impact protecting water oxygen for luminescent material (3).
16. a kind of LED as claimed in claim 11; it is characterized in that; also include: be arranged on the sealing structure (4) on described protection material (6) surface; described sealing structure (4) uses quartz plate glass or quartz glass lens, is used for the impact improving spatial light color uniformity and protection water oxygen for luminescent material (3).
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| CN201610291148.4A CN105789416B (en) | 2016-05-05 | 2016-05-05 | A kind of layer stereo grid luminescent layer preparation process and LED light emitting device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019072881A1 (en) * | 2017-10-13 | 2019-04-18 | Merck Patent Gmbh | Manufacturing process for an optoelectronic device |
| CN110082959A (en) * | 2019-04-30 | 2019-08-02 | 京东方科技集团股份有限公司 | A kind of fluorescent film and preparation method thereof and lamp bar |
| CN112993142A (en) * | 2021-02-08 | 2021-06-18 | 华中科技大学 | Three-dimensional high-thermal-conductivity white light LED and preparation method thereof |
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| CN102376849A (en) * | 2010-08-05 | 2012-03-14 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
| CN104300074A (en) * | 2013-07-19 | 2015-01-21 | 深圳大学 | Phosphor coating method and LED device |
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2016
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376849A (en) * | 2010-08-05 | 2012-03-14 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
| CN104300074A (en) * | 2013-07-19 | 2015-01-21 | 深圳大学 | Phosphor coating method and LED device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019072881A1 (en) * | 2017-10-13 | 2019-04-18 | Merck Patent Gmbh | Manufacturing process for an optoelectronic device |
| CN111194485A (en) * | 2017-10-13 | 2020-05-22 | 默克专利股份有限公司 | Method for manufacturing photoelectric device |
| US20210193879A1 (en) * | 2017-10-13 | 2021-06-24 | Merck Patent Gmbh | Manufacturing process for an optoelectronic device |
| US11888095B2 (en) * | 2017-10-13 | 2024-01-30 | Merck Patent Gmbh | Manufacturing process for an optoelectronic device |
| CN110082959A (en) * | 2019-04-30 | 2019-08-02 | 京东方科技集团股份有限公司 | A kind of fluorescent film and preparation method thereof and lamp bar |
| CN110082959B (en) * | 2019-04-30 | 2021-11-16 | 京东方科技集团股份有限公司 | Fluorescent film, preparation method thereof and lamp strip |
| CN112993142A (en) * | 2021-02-08 | 2021-06-18 | 华中科技大学 | Three-dimensional high-thermal-conductivity white light LED and preparation method thereof |
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| CN105789416B (en) | 2018-09-11 |
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Effective date of registration: 20220810 Address after: 100176 2nd floor, building 3, courtyard 58, jinghaiwu Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing Yimei New Technology Co.,Ltd. Address before: 100176, No. 4, 2 building, Huilong Sen science and Technology Park, 99 Chuang fourteen street, Daxing District economic and Technological Development Zone, Beijing. Patentee before: SHINEON (BEIJING) TECHNOLOGY Co.,Ltd. |
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