CN105789350B - Exposure { 111 } crystal face Cu2Se/Cu2The preparation method of O superlattices sub-micro rice noodles - Google Patents
Exposure { 111 } crystal face Cu2Se/Cu2The preparation method of O superlattices sub-micro rice noodles Download PDFInfo
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- CN105789350B CN105789350B CN201610172580.1A CN201610172580A CN105789350B CN 105789350 B CN105789350 B CN 105789350B CN 201610172580 A CN201610172580 A CN 201610172580A CN 105789350 B CN105789350 B CN 105789350B
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- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 235000007164 Oryza sativa Nutrition 0.000 title claims abstract description 37
- 235000012149 noodles Nutrition 0.000 title claims abstract description 37
- 235000009566 rice Nutrition 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 240000007594 Oryza sativa Species 0.000 title 1
- 239000010949 copper Substances 0.000 claims abstract description 104
- 241000209094 Oryza Species 0.000 claims abstract description 36
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 28
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 9
- 239000012153 distilled water Substances 0.000 claims abstract description 8
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 claims 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001416 lithium ion Inorganic materials 0.000 abstract description 3
- 230000001699 photocatalysis Effects 0.000 abstract description 2
- 238000007146 photocatalysis Methods 0.000 abstract description 2
- 239000002226 superionic conductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 9
- 239000002086 nanomaterial Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 239000002057 nanoflower Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of exposure { 111 } crystal face Cu2Se/Cu2The preparation method of O superlattices sub-micro rice noodles, the method be using simple hydro-thermal method, the mixed liquor with ethanolamine and distilled water as solvent, by Se powder and KBH4, calcine under inert gas shielding after the copper sheet hydro-thermal reaction handled well, you can be prepared into exposure { 111 } crystal face Cu on copper sheet surface2Se/Cu2O superlattices sub-micro rice noodles, its a diameter of 0.23～2.14 μm, 17～420 μm of length.Simple to operate, low cost of the invention, repeatability and good, prepared exposure { 111 } the crystal face cubic structure Cu of concordance2Se/Cu2O superlattices sub-micro rice noodles are expected to embody enhanced photoelectric properties in the application such as photocatalysis, solaode, superionic conductors, lithium ion battery and ultracapacitor.
Description
Technical field
The invention belongs to low dimensional structures Semiconductor Optoeletronic Materials technical field, and in particular to a kind of exposure { 111 } crystal face
Cu2Se/Cu2The preparation method of O superlattices sub-micro rice noodles.
Background technology
In recent years, it has been found that the physical and chemical performance of semiconductor nano material depends not only on size and pattern, and
Also relevant (the J.Am.Chem.Soc.2009,131,4078-4083 of crystal face is exposed with which；Chem.Commun.2010,46,1893-
1895).Therefore, the preparation with high reaction activity surface semiconductor nano material causes people greatly to pay close attention to, and becomes nano material
Study hotspot (Adv.Mater.2012,24,229-251).However, high reaction activity face is typically high energy crystal face, high energy is brilliant
The general fast growth in face, is difficult to come out, and nano material generally exposed crystal face is the slower low work of those speeds of growth
Property crystal face.Therefore, the preparation for exposing high reaction activity crystal face nano material is a challenging problem so far
(Appl.Catal.,B 2015,163,189-197；ACS Appl.Mater.Inter.2015,7,6109-6117).
Semiconductor superlattice structure nano material, as the controllability of its electronic band structure has in terms of photoelectric device
Huge potential using value (Appl.Phys.Lett.2003,82,964-966).People have prepared Si/SiGe at present
Superlattice nano line (Nano Lett.2002,2,83-86), GaAs/GaP superlattice nano lines (Nature 2002,415,
617-620), In/ZnO superlattice nano lines (J.Phys.Chem.B 2004,108,17027-17031) and InAs/InP are super brilliant
Lattice structure (Nano Lett.2002,2,87-89).However, Cu2Se/Cu2O superlattice structure nano materials are not reported so far.
Berzeline (Cu2) and Red copper oxide (Cu Se2O it is) two kinds of important p-type semiconductors, wherein Cu2The indirect belt of Se
The scope of gap in 1.1～1.5eV, direct band gap positioned between 2.0～2.3eV (J.Am..Chem.Soc.2011,133,
1383-1390), Cu2The band gap of O is about 2.3eV (Cryst.Growth.Des.2010,10,232-236).Due to their uniquenesses
Electronic structure and electrical and optical properties, in solaode, lithium ion battery, ultracapacitor and thermoelectric device, light
The field such as catalytic degradation organic pollution and decomposition water and chemical sensitisation has a wide range of applications.Although people are prepared at present
The Cu of various different-shapes2Se、Cu2O nano materials, including Cu2Se nano-particle (J.Am.Chem.SOC.2011,133,
1383-1390), nanometer rods (Nano Lett.2011,11,4964-4970), nano wire
(Superlattice.Microst.2013,294-302；J.Phys.Chem.C 2013,117,15164-15173) and exposure
{ 111 } crystal face Cu2Se superlattice nano lines (Phys.Chem.Chem.Phys.2015,17,13280-13289)；Cu2O nanometers
Line, nanometer rods (Nano.Lett.2007,7,3723-3728), nanocube (Cryst.Growth.Des.2003,3,717-
720), nano flower (Cryst.Growth.Des.2007,7,87-92), Nano microsphere, nano-hollow ball
(Chem.Eng.J.2012,185-186,151-159), dendritic (the J.Phys.Chem.C 2008,112,13405- of nanotrees
13409), nano hollow structure (Sensor.Actuat B 2012,135-140,171-172) and octahedral structure
(Cryst.Growth.Des.2010,10,232-236) etc..However, exposure { 111 } crystal face Cu2Se/Cu2O superlattices submicrons
The synthesis of line fails to realize so far.
The content of the invention
The technical problem to be solved be provide a kind of simple hydro-thermal method prepare expose { 111 } crystal face and
The Cu of wide aspect ratio2Se/Cu2The preparation method of O superlattices sub-micro rice noodles.
Solving the technical scheme that adopted of above-mentioned technical problem is：Volume ratio with ethanolamine and distilled water is as 4:1 it is mixed
Conjunction liquid is solvent, by Se powder and KBH4It is 1 in molar ratio:1～1.5 mix homogeneously, adds the copper sheet handled well, and 110～200
Then product is calcined 1～3 hour for 330～380 DEG C under inert gas shielding by DEG C hydro-thermal reaction 12～24 hours, from
Room temperature is so cooled to, and exposure { 111 } crystal face Cu is prepared on copper sheet surface2Se/Cu2O superlattices sub-micro rice noodles.
Volume ratio of the present invention preferably with ethanolamine and distilled water is as 4:1 mixed liquor is solvent, by Se powder and KBH4Press
Mol ratio is 1:1～1.5 mix homogeneously, adds the copper sheet handled well, 120～160 DEG C of hydro-thermal reactions 12～24 hours, then
Product is calcined 1～3 hour for 330～380 DEG C under inert gas shielding, room temperature is naturally cooled to, in copper sheet surface system
It is standby into exposure { 111 } crystal face Cu2Se/Cu2O superlattices sub-micro rice noodles.
Optimum selection of the present invention is with the volume ratio of ethanolamine and distilled water as 4:1 mixed liquor is solvent, by Se powder and
KBH4It is 1 in molar ratio:1 mix homogeneously, adds the copper sheet handled well, 120 DEG C of hydro-thermal reactions 24 hours, then produces reaction
Thing is calcined 2 hours for 350 DEG C under inert gas shielding, is naturally cooled to room temperature, is prepared into exposure { 111 } crystal face on copper sheet surface
Cu2Se/Cu2O superlattices sub-micro rice noodles.
The present invention is prepared into Cu using simple hydro-thermal method2Se/Cu2O superlattices sub-micro rice noodles, which has Emission in Cubic crystal
Structure, exposes { 111 } crystal face and with big aspect ratio, a diameter of 0.23～2.14 μm, 17～420 μ of length of sub-micro rice noodle
m.Simple to operate, low cost of the invention, repeatability and good, prepared exposure { 111 } the crystal face cubic structure Cu of concordance2Se/
Cu2O superlattices sub-micro rice noodles are expected in photocatalysis, solaode, superionic conductors, lithium ion battery and ultracapacitor etc.
Enhanced photoelectric properties are embodied using in.
Description of the drawings
Fig. 1 is Cu prepared by embodiment 12Se/Cu2The stereoscan photograph of O superlattices sub-micro rice noodles.
Fig. 2 is Cu prepared by embodiment 12Se/Cu2The X-ray diffractogram of O superlattices sub-micro rice noodles.
Fig. 3 is Cu prepared by embodiment 12Se/Cu2The transmission electron microscope figure of O solid wires.
Fig. 4 is Blocked portion Cu in Fig. 32Se/Cu2The transmission electron microscope enlarged drawing of O.
Fig. 5 is Cu prepared by embodiment 12Se/Cu2The transmission electron microscope figure of O solid wires.
Fig. 6 is Blocked portion Cu in Fig. 52Se/Cu2The transmission electron microscope enlarged drawing of O.
Fig. 7 is Blocked portion Cu in Fig. 62Se/Cu2The transmission electron microscope enlarged drawing of O.
Fig. 8 is 1 part Cu of square frame in Fig. 72Se/Cu2The high explanation transmission electron microscope photo of O.
Fig. 9 is 2 part Cu of square frame in Fig. 72Se/Cu2The high explanation transmission electron microscope photo of O.
Figure 10 is 3 part Cu of square frame in Fig. 72Se/Cu2The high explanation transmission electron microscope photo of O.
Figure 11 is 4 part Cu of square frame in Fig. 72Se/Cu2The high explanation transmission electron microscope photo of O.
Figure 12 is Cu prepared by embodiment 22Se/Cu2The stereoscan photograph of O superlattices sub-micro rice noodles.
Figure 13 is Cu prepared by embodiment 32Se/Cu2The stereoscan photograph of O superlattices sub-micro rice noodles.
Figure 14 is Cu prepared by embodiment 42Se/Cu2The stereoscan photograph of O superlattices sub-micro rice noodles.
Specific embodiment
The present invention is described in more detail with reference to the accompanying drawings and examples, but protection scope of the present invention is not limited only to
These embodiments.
Embodiment 1
Cu pieces are cut into into 2.8 × 1.85cm2Size, is put in the HCl/water solution of 1.0mol/L, with power be 250W,
Frequency is cleaned by ultrasonic 15 minutes (being repeated twice) for the ultrasonic washing unit of 40KHz, spontaneously dries, obtains the copper sheet handled well.
20mL ethanolamine and 5mL distilled water are pipetted in 50mL beakers, then weighs 0.02g (0.25mmol) Se powder and 0.02g respectively
(0.37mmol)KBH4Solid is added in beaker, after being uniformly mixed, mixed liquor is transferred to volume for poly- the four of 50mL
In fluorothene inner bag, then the copper sheet handled well is perpendicularly inserted in polytetrafluoroethylliner liner, sealed reactor, at 120 DEG C
Hydro-thermal reaction 24 hours, naturally cools to room temperature, and reacted copper sheet is taken out from solution, deionized water and dehydrated alcohol
Each washing 3 times, 60 DEG C of dryings in vacuum drying oven, in one layer of fine and close black precursor species of copper sheet Surface Creation, then
The copper sheet being put in tube furnace, under argon gas atmosphere protection, 350 DEG C being warming up to 20 DEG C/min of heating rate, constant temperature is forged
Burn 2 hours, naturally cool to room temperature, exposure { 111 } crystal face Cu is prepared on copper sheet surface2Se/Cu2O superlattices sub-micro rice noodles.
As shown in Figure 1, prepared Cu2Se/Cu2O is line structure, and its cross section is rectangle (see the interior illustration of Fig. 1),
Cu2Se/Cu2A diameter of 0.23～0.85 μm, 285～420 μm of the length of O.As shown in Figure 2, prepared Cu2Se/Cu2O is vertical
The composite construction of square phase.Additionally, in fig. 2 it was found that comparing with standard card (65-2982 and 65-3288), (111) peak phase
For there is higher intensity at other peaks, the texturing coefficient of its (111) crystal face can be calculated by following formula：
In formula, I (hkl) represents the relative intensity value of (hkl) diffraction maximum, I0(hkl) be JCPDS card numbers for 65-2982 and
The Emission in Cubic Cu of 65-32882Se and Cu2The relative intensity value of (hkl) diffraction maximum in O standard powder XRD spectrums, n are calculated for participation
Diffraction maximum number.The material being orientated to random crystal is (such as：Standard powder) for, (hkl) the corresponding texturing of diffraction maximum
Coefficient should be 1.Calculated by above-mentioned formula and learnt, Cu2Se and Cu2(111) crystal face texturing coefficient of O is respectively 1.43 and 1.56,
1.0 are all higher than, show prepared Cu2Se/Cu2O sub-micros rice noodle is orientated with (111), and its main crystal face of exposure is that (111) are brilliant
Face.From Fig. 3～6, prepared Cu2Se/Cu2O sub-micro rice noodles are layer structures, and per layer of thickness is about 9nm.According to
Fig. 7～11 pair Cu2Se/Cu2The Characterization for Microstructure of O sub-micro rice noodles is visible, and in Fig. 8 and 10, spacing of lattice is the lattice of 0.15nm
Striped corresponds to Emission in Cubic structure C u2(220) crystal face of O, in Fig. 9 and 11, spacing of lattice value is the lattice fringe pair of 0.20nm
Should be in Emission in Cubic structure C u2(220) crystal face of Se, it follows that gained Cu2O/Cu2Se sub-micro rice noodles are one with Cu2O and
Cu2The superlattice structure that Se cube of phase structure is alternately arranged.
Embodiment 2
In the present embodiment, hydro-thermal reaction 12 hours at 200 DEG C, other steps are same as Example 1, in copper sheet surface system
It is standby into exposure { 111 } crystal face Cu2Se/Cu2O superlattices sub-micro rice noodles.As seen from Figure 12, prepared Cu2Se/Cu2O superlattices
A diameter of 1.2～2.14 μm of sub-micro rice noodle, length be 17～42 μm.
Embodiment 3
In the present embodiment, hydro-thermal reaction 12 hours at 180 DEG C, other steps are same as Example 1, in copper sheet surface system
It is standby into exposure { 111 } crystal face Cu2Se/Cu2O superlattices sub-micro rice noodles.As seen from Figure 13, prepared Cu2Se/Cu2O superlattices
A diameter of 0.85～1.86 μm of sub-micro rice noodle, length be 21～53 μm.
Embodiment 4
In the present embodiment, hydro-thermal reaction 12 hours at 160 DEG C, other steps are same as Example 1, in copper sheet surface system
It is standby into exposure { 111 } crystal face Cu2Se/Cu2O superlattices sub-micro rice noodles.As seen from Figure 14, prepared Cu2Se/Cu2O superlattices
A diameter of 0.68～1.31 μm of sub-micro rice noodle, length be 25～71 μm.
Claims (4)
1. it is a kind of to expose { 111 } crystal face Cu2Se/Cu2The preparation method of O superlattices sub-micro rice noodles, it is characterised in that：With ethanolamine
Volume ratio with distilled water is 4:1 mixed liquor is solvent, by Se powder and KBH4It is 1 in molar ratio:1～1.5 mix homogeneously, then
The copper sheet handled well of addition, 110～200 DEG C of hydro-thermal reactions 12～24 hours, then by product under inert gas shielding
330～380 DEG C are calcined 1～3 hour, are naturally cooled to room temperature, are prepared into exposure { 111 } crystal face Cu on copper sheet surface2Se/Cu2O
Superlattices sub-micro rice noodle.
2. exposure { 111 } crystal face Cu according to claim 12Se/Cu2The preparation method of O superlattices sub-micro rice noodles, which is special
Levy and be：Volume ratio with ethanolamine and distilled water is as 4:1 mixed liquor is solvent, by Se powder and KBH4It is 1 in molar ratio:1
～1.5 mix homogeneously, add the copper sheet handled well, 120～160 DEG C of hydro-thermal reactions 12～24 hours, then by product
Calcine 1～3 hour for 330～380 DEG C under inert gas shielding, naturally cool to room temperature, exposure is prepared on copper sheet surface
{ 111 } crystal face Cu2Se/Cu2O superlattices sub-micro rice noodles.
3. exposure { 111 } crystal face Cu according to claim 12Se/Cu2The preparation method of O superlattices sub-micro rice noodles, which is special
Levy and be：Volume ratio with ethanolamine and distilled water is as 4:1 mixed liquor is solvent, by Se powder and KBH4It is 1 in molar ratio:1
Mix homogeneously, adds the copper sheet handled well, 120 DEG C of hydro-thermal reactions 24 hours, then by product in inert gas shielding
Lower 350 DEG C are calcined 2 hours, are naturally cooled to room temperature, are prepared into exposure { 111 } crystal face Cu on copper sheet surface2Se/Cu2O superlattices
Sub-micro rice noodle.
4. exposure { 111 } crystal face Cu according to claims 1 to 3 any one2Se/Cu2The system of O superlattices sub-micro rice noodles
Preparation Method, it is characterised in that：Exposure { 111 } the crystal face Cu2Se/Cu2A diameter of 0.23～2.14 μ of O superlattices sub-micro rice noodles
17～420 μm of m, length.
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| CN112700967B (en) * | 2020-11-30 | 2021-12-03 | 电子科技大学 | Cu with high specific capacity2-xNegative electrode material of Se super capacitor |
| CN113235112B (en) * | 2021-04-20 | 2022-08-30 | 深圳大学 | Copper oxide nanoparticle catalyst with large-cavity eggshell structure and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101871117A (en) * | 2010-06-30 | 2010-10-27 | 湖南大学 | CuxSe/TiO2 nanotube array of p-type semiconductor nano material and preparation method thereof |
| CN103774233A (en) * | 2014-01-10 | 2014-05-07 | 陕西师范大学 | Method for preparing Cu2Se single-crystal nanowire of exposing high-energy (III) cubic crystal structure |
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| CN101871117A (en) * | 2010-06-30 | 2010-10-27 | 湖南大学 | CuxSe/TiO2 nanotube array of p-type semiconductor nano material and preparation method thereof |
| CN103774233A (en) * | 2014-01-10 | 2014-05-07 | 陕西师范大学 | Method for preparing Cu2Se single-crystal nanowire of exposing high-energy (III) cubic crystal structure |
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