CN105789281A - GaN device with mixed polarity - Google Patents
GaN device with mixed polarity Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002156 mixing Methods 0.000 claims description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000010953 base metal Substances 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 235000007926 Craterellus fallax Nutrition 0.000 description 1
- 240000007175 Datura inoxia Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a GaN device with the mixed polarity. The GaN device relates to the technical field of field effect transistors with two-dimensional carrier gas channels. The GaN device comprises a substrate layer, an N-polar GaN buffer layer, a first N-polar Alx GaN layer with a gradually increased Al component x, a second N-polar AlxGaN layer with a constant Al component x, a third N-polar AlxGaN layer with a gradually reduced Al component x, and a Ga-polar GaN channel layer. By virtue of the structure, a GaN based material with higher quality can grow epitaxially and the surface density and migration rate of 2DEG in a channel can be increased; and meanwhile a device with smaller ohmic contact resistance can be fabricated on a material with the mixed polarity by adopting a conventional Ga-polar GaN based device fabrication process.
Description
Technical field
The present invention relates to the field-effect transistor technical field with two dimension carrier gas channel, particularly relate to a kind of GaN device mixing polarity.
Background technology
GaN base material enjoys researcher to pay close attention in the application such as microelectronics, photoelectron with material features such as broad stopband, high breakdown electric field, high saturated electron drift velocity, become forward position and the focus of the research of current global semiconductor, together with the material such as SiC and referred to as the most promising " third generation semi-conducting material ".
Owing to the GaN of wurtzite structure lacks center inverting, cause extremely strong spontaneous polarization phenomenon, therefore the GaN for wurtzite structure exists gallium polarity (Ga-polar) and the GaN of nitrogen polarity (N-polar) two kinds of polarised directions.Due to bi-material opposite polarity, the GaN material causing two kinds of opposed polarities there is also many differences, as N-polar GaN relatively Ga-polar GaN is more easy to be corroded by alkaline solution, its chemical mobility of the surface is stronger simultaneously, surface state more horn of plenty, and along with the development of material epitaxy growing technology, the preparation of N-polar GaN material also becomes the easiest.This is all that extensively applying of N-polar GaN material is laid a good foundation.
In the hetero-junctions of traditional Ga-polar GaN base HEMT (HEMT) AlGaN upper, GaN under, Ti/Al Base Metal is deposited directly on AlGaN, and AlGaN energy gap is wider compared with GaN, thus cause ohmic contact resistance relatively big, have impact on device performance.In N-polar GaN base HEMT, in order to mutually compatible with Ga-polar GaN base device technology, typically it is also adopted by Ti/Al Base Metal system as metal ohmic contact, due in the hetero-junctions that N-polar GaN and AlGaN is constituted GaN above AlGaN, so Ti/Al base metal ohmic contact can be deposited directly on N-polar GaN, and GaN energy gap is narrow compared with AlGaN, such that it is able to realize less ohmic contact resistance.But research finds that the Ti/Al base metal ohmic contact being deposited directly in N-polar GaN base HEMT on N-polar GaN can not realize less ohmic contact resistance after high annealing, reason is that the Al metal in Ti/Al Base Metal can penetrate in Ti metal level entrance GaN after high annealing and be combined formation AlN with N.
In Ga-polar GaN, this AlN and GaN can form the AlN/GaN hetero-junctions being similar to AlGaN/GaN hetero-junctions, thus in the GaN of AlN and GaN interface, form two-dimensional electron gas (2DEG), but 2DEG will not be produced in the hetero-junctions that AlN and N-polar GaN is constituted in N-polar GaN, can form two-dimensional hole gas (2DHG) on the contrary, reason is that its polarity has differed 180 ° with Ga-polar GaN.And the existence of this 2DHG will certainly make ohmic contact characteristic be deteriorated, thus cause in N-polar GaN base HEMT, still cannot realize less ohmic contact resistance.In order to obtain less ohmic contact resistance, some documents report uses ohm regeneration reduce ohmic contact resistance, but the method can improve technology difficulty, increase device preparation time and increase the uncertainty of technique.
Summary of the invention
The technical problem to be solved is to provide a kind of GaN device mixing polarity, traditional Ga-polar GaN base device preparation technology can be used to prepare the device with less ohmic contact resistance on this mixing polar material with epitaxial growth quality higher GaN base material 2DEG surface density and mobility in increasing raceway groove by this structure simultaneously.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of GaN crystalline substance device mixing polarity, it is characterised in that: include substrate layer, N-polar GaN cushion, Al component from bottom to topxAn incrementally N-polar Al of gradual change x GaN layer, Al componentxKeep the 2nd N-polar Al of constant x GaN layer, Al componentx3rd N-polar Al of degression type gradual change x GaN layer and Ga-polar GaN channel layer；A wherein said N-polar Al x Al component in GaN layerxIt is incremented to maximum, the 2nd N-polar Al from minimum x Al component in GaN layerxKeep a N-polar Al x Al component in GaN layerxMaximum constant, the 3rd N-polar Al x Al component in GaN layerxFrom a N-polar Al x Al component in GaN layerxMaximum start to be decremented to minimum, wherein the 3rd N-polar Al x Al component in GaN layerxMinimum more than a N-polar Al x Al component in GaN layerxMinimum, 0x≦1。
Further technical scheme is: described 3rd N-polar Al x N-polar AlN insert layer it is provided with between GaN layer and Ga-polar GaN channel layer.
Further technical scheme is: the growth thickness of described N-polar AlN insert layer is between 1nm-2nm.
Further technical scheme is: described substrate layer is Sapphire Substrate, silicon carbide substrates or silicon substrate.
Further technical scheme is: a N-polar Al x GaN layer, the 2nd N-polar Al x GaN layer and the 3rd N-polar Al x The gross thickness of GaN layer is between 20nm-50nm.
Further technical scheme is: a N-polar Al x Al group in GaN layerxIncrementally be gradient to 0.5 from 0, thickness is between 10nm-20nm；2nd N-polar Al x Al group in GaN layerxKeeping 0.5 constant, thickness is 5nm-15nm；3rd N-polar Al x Al group in GaN layerxBeing gradient to 0.25-0.3 from 0.5 degression type, thickness is 5nm-15nm.
Further technical scheme is: the thickness of described N-polar GaN cushion is between 1 μm-3 μm.
Use and have the beneficial effects that produced by technique scheme: in this application, Ti/Al base metal ohmic contact can be deposited directly on Ga-polar GaN, due to GaN relatively Al x GaN energy gap is narrower, it is achieved thereby that than in prior art at Ga-polar Al x Less ohmic contact resistance, simultaneously Al component is formed on GaN/GaN hetero-junctionsxThe N-polar Al of degression type gradual change x GaN layer exists as back of the body barrier layer, further increases 2DEG and limits threshold.And at N-polar GaN/Al x In GaN hetero-junctions, Ti/Al Base Metal is deposited on N-polar GaN, due to N-polar GaN and Ga-polar GaN polarity spectrum 180 °, cause the Ti/Al Base Metal being deposited on N-polar GaN can produce the 2DHG being unfavorable for Ohmic contact after the high-temperature anneal, but on Ga-polar GaN, then can produce the 2DEG of beneficially Ohmic contact, therefore the ohmic contact resistance on mixing polar GaN device is than N-polar GaN/Al x Ohmic contact resistance on GaN hetero-junctions is also little.
Al componentxThree layers of Al of gradual change x In GaN layer, Al componentxThe incrementally gradual change of 0-0.5 is the most first carried out along substrate, keep constant constant subsequently, after quality of materials is stable, Al component carries out 0.5-(0.25-0.3) degression type gradual change, when so carrying out extension on Ga-polar GaN cushion, can ensure that more excellent Lattice Matching, such that it is able to improve epitaxial material quality, reduce fault in material, raising 2DEG surface density and mobility.This more preferable quality of materials and more excellent ohmic contact characteristic are that solid material foundation has been established in the extensively application of mixing polar GaN device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention one；
Fig. 2 is the structural representation of the embodiment of the present invention two；
Wherein: 1, substrate layer 2, N-polar GaN cushion the 3, the oneth N-polar Al x GaN layer the 4, the 2nd N-polar Al x GaN layer the 5, the 3rd N-polar Al x GaN layer 6, N-polar AlN insert layer 7, Ga-polar GaN channel layer 8, source electrode 9, grid 10, drain electrode.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention can also use other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization in the case of intension of the present invention, and therefore the present invention is not limited by following public specific embodiment.
Overall, the invention discloses a kind of GaN device mixing polarity, include substrate layer 1, N-polar GaN cushion 2, Al component from bottom to topxAn incrementally N-polar Al of gradual change x GaN layer 3, Al componentxKeep the 2nd N-polar Al of constant x GaN layer 4, Al componentx3rd N-polar Al of degression type gradual change x GaN layer 5 and Ga-polar GaN channel layer 7；A wherein said N-polar Al x Al component in GaN layer 3xIt is incremented to maximum, the 2nd N-polar Al from minimum x Al component in GaN layer 4xKeep a N-polar Al x Al component in GaN layer 3xMaximum constant, the 3rd N-polar Al x Al component in GaN layer 5xFrom a N-polar Al x Al component in GaN layer 3xMaximum start to be decremented to minimum, wherein the 3rd N-polar Al x Al component in GaN layer 5xMinimum more than a N-polar Al x Al component in GaN layer 3xMinimum, 0x≦1。
In this application, Ti/Al base metal ohmic contact can be deposited directly on Ga-polar GaN, due to GaN relatively Al x GaN energy gap is narrower, it is achieved thereby that ratio Ga-polar Al x Ohmic contact resistance less on GaN/GaN hetero-junctions, simultaneously Al componentxThe N-polar Al of degression type gradual change x GaN layer exists as back of the body barrier layer, further increases 2DEG and limits threshold.And at N-polar GaN/Al x In GaN hetero-junctions, Ti/Al Base Metal is deposited on N-polar GaN, due to N-polar GaN and Ga-polar GaN polarity spectrum 180 °, cause the Ti/Al Base Metal being deposited on N-polar GaN can produce the 2DHG being unfavorable for Ohmic contact after the high-temperature anneal, but on Ga-polar GaN, then can produce the 2DEG of beneficially Ohmic contact, therefore the ohmic contact resistance on mixing polar GaN device is than N-polar GaN/Al x Ohmic contact resistance on GaN hetero-junctions is also little.
Al componentxThree layers of Al of gradual change x In GaN layer, Al componentxThe incrementally gradual change of 0-0.5 is the most first carried out along substrate, keep constant constant subsequently, after quality of materials is stable, Al component carries out 0.5-(0.25-0.3) degression type gradual change, when so carrying out extension on Ga-polar GaN cushion, can ensure that more excellent Lattice Matching, such that it is able to improve epitaxial material quality, reduce fault in material, raising 2DEG surface density and mobility.This more preferable quality of materials and more excellent ohmic contact characteristic are that solid material foundation has been established in the extensively application of mixing polar GaN device.
Embodiment one
Embodiments of the present invention, as a example by the GaN/AlGaN Schottky barrier field effect transistor MESFET device of mixing polarity, are specifically described by the present embodiment in conjunction with accompanying drawing 1.MESFET device described in the present embodiment includes from bottom to top: substrate layer 1, N-polar GaN cushion 2, Al componentxAn incrementally N-polar Al of gradual change x GaN layer 3, Al componentxKeep the 2nd N-polar Al of constant x GaN layer 4, Al componentx3rd N-polar Al of degression type gradual change x GaN layer 5, Ga-polar GaN channel layer 7；The upper surface of described Ga-polar GaN channel layer 7 is provided with source electrode 8, grid 9, drain electrode 10.
It is pointed out that in the present embodiment: described substrate layer 1 can be Sapphire Substrate, silicon carbide substrates or silicon substrate；Described N-polar GaN cushion 2 thickness is between 1-3 μm；Described Al componentxThe incrementally Al of gradual change x GaN layer is N-polar, epitaxial growth thickness between 10-20nm, Al groupx0.5 incrementally it is gradient to from 0；Described Al componentxKeep the Al of constant x GaN layer is N-polar, and epitaxial growth thickness is 15nm, Al componentxKeep 0.5 constant；Described Al componentxThe Al of degression type gradual change x GaN back of the body barrier layer is N-polar, and epitaxial growth thickness is 5-15nm, Al groupxIt is gradient to 0.25-0.3 from 0.5 degression type.Described Ga-polar GaN channel layer 7 is in epitaxial growth complete Al componentxThe Al of gradual change x Epitaxial growth after GaN back of the body barrier layer, polarity can be controlled by when epitaxial material growth, and growth thickness is between 15-35nm.
Embodiment two
Embodiments of the present invention, as a example by mixing polar GaN/AlGaN high electron mobility transistor (HEMT) device, are specifically described by the present embodiment in conjunction with accompanying drawing 2.In the present embodiment, described HEMT device includes from bottom to top: substrate layer 1, N-polar GaN cushion 2, Al componentxAn incrementally N-polar Al of gradual change x GaN layer 3, Al componentxKeep the 2nd N-polar Al of constant x GaN layer 4, Al componentx3rd N-polar Al of degression type gradual change x GaN layer 5, N-polar AlN insert layer 6, Ga-polar GaN channel layer 7；The upper surface of described Ga-polar GaN channel layer 7 is provided with source electrode 8, grid 9, drain electrode 10.
It is pointed out that in the present embodiment: described substrate layer 1 can be Sapphire Substrate, silicon carbide substrates or silicon substrate.Described GaN cushion is N-polar, and thickness is between 1 μm-3 μm.Described Al componentxThe incrementally Al of gradual change x GaN layer is N-polar, epitaxial growth thickness between 10nm-20nm, Al groupx0.5 incrementally it is gradient to from 0.Described Al componentxKeep the Al of constant x GaN layer is N-polar, and epitaxial growth thickness is 15nm, Al groupxKeep 0.5 constant.Described Al componentxThe Al of degression type gradual change x GaN back of the body barrier layer is N-polar, and epitaxial growth thickness is 5-15nm, Al groupxIt is gradient to 0.25-0.3 from 0.5 degression type.Described AlN insert layer is N-polar, in epitaxial growth complete Al componentxThe N-polar Al of degression type gradual change x Epitaxial growth N-polar AlN insert layer after GaN back of the body barrier layer, growth thickness is between 1-2nm.Described GaN channel layer is Ga-polar, and epitaxial growth Ga-polar GaN channel layer after epitaxial growth complete N-polar AlN insert layer, polarity can be controlled by when epitaxial material growth, and growth thickness is between 15nm-35nm.
Claims (7)
1. the GaN device mixing polarity, it is characterised in that: include substrate layer (1), N-polar GaN cushion (2), Al component from bottom to topxAn incrementally N-polar Al of gradual change x GaN layer (3), Al componentxKeep the 2nd N-polar Al of constant x GaN layer (4), Al componentx3rd N-polar Al of degression type gradual change x GaN layer (5) and Ga-polar GaN channel layer (7)；A wherein said N-polar Al x Al component in GaN layer (3)xIt is incremented to maximum, the 2nd N-polar Al from minimum x Al component in GaN layer (4)xKeep a N-polar Al x Al component in GaN layer (3)xMaximum constant, the 3rd N-polar Al x Al component in GaN layer (5)xFrom a N-polar Al x Al component in GaN layer (3)xMaximum start to be decremented to minimum, wherein the 3rd N-polar
Al x Al component in GaN layer (5)xMinimum more than a N-polar Al x Al component in GaN layer (3)xMinimum, 0x≦1。
2. the GaN device mixing polarity as claimed in claim 1, it is characterised in that: described 3rd N-polar Al x N-polar AlN insert layer (6) it is provided with between GaN layer (5) and Ga-polar GaN channel layer (7).
3. the GaN device mixing polarity as claimed in claim 2, it is characterised in that: the growth thickness of described N-polar AlN insert layer (6) is between 1nm-2nm.
4. the GaN device mixing polarity as claimed in claim 1, it is characterised in that: described substrate layer (1) is Sapphire Substrate, silicon carbide substrates or silicon substrate.
5. the GaN device mixing polarity as claimed in claim 1, it is characterised in that: the thickness of described N-polar GaN cushion (2) is between 1 μm-3 μm.
6. the GaN device mixing polarity as claimed in claim 1, it is characterised in that: a N-polar Al x GaN layer (3), the 2nd N-polar Al x GaN layer (4) and the 3rd N-polar Al x The gross thickness of GaN layer (5) is between 20nm-50nm.
7. the GaN device mixing polarity as claimed in claim 1, it is characterised in that: a N-polar Al x Al group in GaN layer (3)xIncrementally be gradient to 0.5 from 0, thickness is between 10nm-20nm；2nd N-polar Al x Al group in GaN layer (4)xKeeping 0.5 constant, thickness is 5nm-15nm；3rd N-polar Al x Al group in GaN layer (5)xBeing gradient to 0.25-0.3 from 0.5 degression type, thickness is 5nm-15nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106920739A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院宁波材料技术与工程研究所 | A kind of epitaxial growth Al based on gradient lamination buffer layer thin filmmGa1‑mThe method of N |
| CN107346785A (en) * | 2017-05-22 | 2017-11-14 | 中国电子科技集团公司第五十五研究所 | A kind of N polarity AlGaN/GaN high electron mobility FETs |
| CN110112273A (en) * | 2019-05-10 | 2019-08-09 | 马鞍山杰生半导体有限公司 | A kind of deep ultraviolet LED epitaxial structure and preparation method thereof and deep ultraviolet LED |
| CN110226231A (en) * | 2017-02-21 | 2019-09-10 | 雷声公司 | With the nitride structure without golden contact portion and the method for forming this structure |
| CN111129127A (en) * | 2019-12-23 | 2020-05-08 | 中山大学 | Structure and method for improving thermal stability and reliability of GaN ohmic contact of N-polarity surface |
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| JPH11261051A (en) * | 1998-03-09 | 1999-09-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| CN104051519A (en) * | 2013-03-15 | 2014-09-17 | 三菱电机株式会社 | Device, high electron mobility transistor, and method for controlling the transistor to work |
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2016
- 2016-03-17 CN CN201610152348.1A patent/CN105789281B/en active Active
Patent Citations (2)
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| JPH11261051A (en) * | 1998-03-09 | 1999-09-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| CN104051519A (en) * | 2013-03-15 | 2014-09-17 | 三菱电机株式会社 | Device, high electron mobility transistor, and method for controlling the transistor to work |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110226231A (en) * | 2017-02-21 | 2019-09-10 | 雷声公司 | With the nitride structure without golden contact portion and the method for forming this structure |
| CN106920739A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院宁波材料技术与工程研究所 | A kind of epitaxial growth Al based on gradient lamination buffer layer thin filmmGa1‑mThe method of N |
| CN107346785A (en) * | 2017-05-22 | 2017-11-14 | 中国电子科技集团公司第五十五研究所 | A kind of N polarity AlGaN/GaN high electron mobility FETs |
| CN107346785B (en) * | 2017-05-22 | 2019-11-26 | 中国电子科技集团公司第五十五研究所 | A kind of N polarity AlGaN/GaN high electron mobility field-effect tube |
| CN110112273A (en) * | 2019-05-10 | 2019-08-09 | 马鞍山杰生半导体有限公司 | A kind of deep ultraviolet LED epitaxial structure and preparation method thereof and deep ultraviolet LED |
| CN110112273B (en) * | 2019-05-10 | 2020-06-30 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial structure, preparation method thereof and deep ultraviolet LED |
| CN111129127A (en) * | 2019-12-23 | 2020-05-08 | 中山大学 | Structure and method for improving thermal stability and reliability of GaN ohmic contact of N-polarity surface |
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| CN105789281B (en) | 2019-01-29 |
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