CN105789124A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

Info

Publication number: CN105789124A
Authority: CN; China
Prior art keywords: wafer; laser beam; pulse laser; upgrading layer; pulse
Prior art date: 2015-01-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CN201511004991.1A

Other languages

English (en)

Chinese (zh)

Inventor

植木笃

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Disco Corp

Original Assignee

Disco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-01-09

Filing date

2015-12-29

Publication date

2016-07-20

2015-12-29 Application filed by Disco Corp filed Critical Disco Corp

2016-07-20 Publication of CN105789124A publication Critical patent/CN105789124A/zh

Status Pending legal-status Critical Current

Links

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Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Optics & Photonics (AREA)
Electromagnetism (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Laser Beam Processing (AREA)
Dicing (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)

CN201511004991.1A 2015-01-09 2015-12-29 晶片的加工方法 Pending CN105789124A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2015-003531		2015-01-09
JP2015003531A JP2016129203A (ja)	2015-01-09	2015-01-09	ウエーハの加工方法

Publications (1)

Publication Number	Publication Date
CN105789124A true CN105789124A (zh)	2016-07-20

Family

ID=56384457

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201511004991.1A Pending CN105789124A (zh)	2015-01-09	2015-12-29	晶片的加工方法

Country Status (4)

Country	Link
JP (1)	JP2016129203A (ja)
KR (1)	KR20160086267A (ja)
CN (1)	CN105789124A (ja)
TW (1)	TW201635357A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN109524358A (zh) *	2017-09-20	2019-03-26	东芝存储器株式会社	半导体装置及其制造方法
CN110039204A (zh) *	2018-01-16	2019-07-23	株式会社迪思科	被加工物的激光加工方法
CN110625275A (zh) *	2018-06-20	2019-12-31	株式会社迪思科	激光加工装置
CN111295265A (zh) *	2017-11-07	2020-06-16	浜松光子学株式会社	激光加工方法和激光加工装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20180141160A1 (en) *	2016-11-21	2018-05-24	General Electric Company	In-line laser scanner for controlled cooling rates of direct metal laser melting
KR101902991B1 (ko) *	2017-02-20	2018-10-02	(주)큐엠씨	레이저 스크라이빙 장치
JP6620825B2 (ja)	2017-02-27	2019-12-18	日亜化学工業株式会社	半導体素子の製造方法
JP6869623B2 (ja) *	2017-10-26	2021-05-12	住友重機械工業株式会社	レーザ加工装置
JP6925945B2 (ja) *	2017-11-30	2021-08-25	株式会社ディスコ	ウエーハの加工方法
JP7339509B2 (ja)	2019-08-02	2023-09-06	日亜化学工業株式会社	発光素子の製造方法
KR20210038335A (ko)	2019-09-30	2021-04-07	니치아 카가쿠 고교 가부시키가이샤	발광 소자의 제조 방법
CN111055028A (zh) *	2019-12-31	2020-04-24	武汉大学	基于等离子体的扩展可控裂纹的激光切割装置及方法

Citations (2)

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Publication number	Priority date	Publication date	Assignee	Title
CN102024886A (zh) *	2009-09-14	2011-04-20	株式会社迪思科	晶片的加工方法
JP2013146747A (ja) *	2012-01-17	2013-08-01	Aisin Seiki Co Ltd	レーザによる割断方法、及びレーザ割断装置

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Publication number	Priority date	Publication date	Assignee	Title
JP4659301B2 (ja) *	2001-09-12	2011-03-30	浜松ホトニクス株式会社	レーザ加工方法
JP4684544B2 (ja)	2003-09-26	2011-05-18	株式会社ディスコ	シリコンから形成された半導体ウエーハの分割方法及び装置
JP2006035710A (ja) *	2004-07-28	2006-02-09	Cyber Laser Kk	レーザによるガラス加工方法ならびに装置
JP2006108459A (ja)	2004-10-07	2006-04-20	Disco Abrasive Syst Ltd	シリコンウエーハのレーザー加工方法およびレーザー加工装置
JP4402708B2 (ja)	2007-08-03	2010-01-20	浜松ホトニクス株式会社	レーザ加工方法、レーザ加工装置及びその製造方法
JP2014241359A (ja) *	2013-06-12	2014-12-25	三星ダイヤモンド工業株式会社	基板の分断方法

2015
- 2015-01-09 JP JP2015003531A patent/JP2016129203A/ja active Pending
- 2015-12-03 TW TW104140568A patent/TW201635357A/zh unknown
- 2015-12-22 KR KR1020150183853A patent/KR20160086267A/ko unknown
- 2015-12-29 CN CN201511004991.1A patent/CN105789124A/zh active Pending

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102024886A (zh) *	2009-09-14	2011-04-20	株式会社迪思科	晶片的加工方法
JP2013146747A (ja) *	2012-01-17	2013-08-01	Aisin Seiki Co Ltd	レーザによる割断方法、及びレーザ割断装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN109524358A (zh) *	2017-09-20	2019-03-26	东芝存储器株式会社	半导体装置及其制造方法
CN111295265A (zh) *	2017-11-07	2020-06-16	浜松光子学株式会社	激光加工方法和激光加工装置
US11642743B2 (en)	2017-11-07	2023-05-09	Hamamatsu Photonics K.K.	Laser processing method, and laser processing device
CN110039204A (zh) *	2018-01-16	2019-07-23	株式会社迪思科	被加工物的激光加工方法
CN110039204B (zh) *	2018-01-16	2022-09-16	株式会社迪思科	被加工物的激光加工方法
CN110625275A (zh) *	2018-06-20	2019-12-31	株式会社迪思科	激光加工装置

Also Published As

Publication number	Publication date
TW201635357A (zh)	2016-10-01
JP2016129203A (ja)	2016-07-14
KR20160086267A (ko)	2016-07-19

Legal Events

Date	Code	Title	Description
2016-07-20	C06	Publication
2016-07-20	PB01	Publication
2018-01-02	SE01	Entry into force of request for substantive examination
2018-01-02	SE01	Entry into force of request for substantive examination
2020-02-11	WD01	Invention patent application deemed withdrawn after publication	Application publication date: 20160720
2020-02-11	WD01	Invention patent application deemed withdrawn after publication

Publication	Publication Date	Title
CN105789124A (zh)	2016-07-20	晶片的加工方法
CN105789125A (zh)	2016-07-20	晶片的加工方法
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CN107039260B (zh)	2021-10-15	晶片的加工方法
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