CN105785725A - Photoresist residue cleaning liquid - Google Patents
Photoresist residue cleaning liquid Download PDFInfo
- Publication number
- CN105785725A CN105785725A CN201410831546.1A CN201410831546A CN105785725A CN 105785725 A CN105785725 A CN 105785725A CN 201410831546 A CN201410831546 A CN 201410831546A CN 105785725 A CN105785725 A CN 105785725A
- Authority
- CN
- China
- Prior art keywords
- cleanout fluid
- mass percent
- concentration
- hydrazine
- hydramine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007788 liquid Substances 0.000 title claims abstract description 20
- 238000004140 cleaning Methods 0.000 title abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 title abstract description 15
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 26
- -1 ethoxyl compound Chemical class 0.000 claims abstract description 21
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000002989 phenols Chemical class 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 9
- 239000012530 fluid Substances 0.000 claims description 54
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 4
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- 150000003462 sulfoxides Chemical class 0.000 claims description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920005862 polyol Polymers 0.000 claims description 3
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical group CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- ZABFSYBSTIHNAE-UHFFFAOYSA-N 1-(dimethylamino)butan-2-ol Chemical compound CCC(O)CN(C)C ZABFSYBSTIHNAE-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical group COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- GBHCABUWWQUMAJ-UHFFFAOYSA-N 2-hydrazinoethanol Chemical compound NNCCO GBHCABUWWQUMAJ-UHFFFAOYSA-N 0.000 claims description 2
- XSXYESVZDBAKKT-UHFFFAOYSA-N 2-hydroxybenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1O XSXYESVZDBAKKT-UHFFFAOYSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- WARCRYXKINZHGQ-UHFFFAOYSA-N benzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1 WARCRYXKINZHGQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000010290 biphenyl Nutrition 0.000 claims description 2
- 239000004305 biphenyl Substances 0.000 claims description 2
- HCOMFAYPHBFMKU-UHFFFAOYSA-N butanedihydrazide Chemical compound NNC(=O)CCC(=O)NN HCOMFAYPHBFMKU-UHFFFAOYSA-N 0.000 claims description 2
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 2
- 229960005150 glycerol Drugs 0.000 claims description 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 2
- 125000003431 oxalo group Chemical group 0.000 claims description 2
- 229940059574 pentaerithrityl Drugs 0.000 claims description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000600 sorbitol Substances 0.000 claims description 2
- 229960002920 sorbitol Drugs 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical group O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 239000000811 xylitol Substances 0.000 claims description 2
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 2
- 229960002675 xylitol Drugs 0.000 claims description 2
- 235000010447 xylitol Nutrition 0.000 claims description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 3
- 229940079877 pyrogallol Drugs 0.000 claims 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 claims 1
- 229940113088 dimethylacetamide Drugs 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 22
- 239000002184 metal Substances 0.000 abstract description 22
- 239000004065 semiconductor Substances 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 6
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 238000004380 ashing Methods 0.000 abstract description 3
- 230000008859 change Effects 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 18
- 230000007797 corrosion Effects 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CFQPVBJOKYSPKG-UHFFFAOYSA-N 1,3-dimethylimidazol-2-one Chemical compound CN1C=CN(C)C1=O CFQPVBJOKYSPKG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000008109 benzenetriols Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- ILLHQJIJCRNRCJ-UHFFFAOYSA-N dec-1-yne Chemical compound CCCCCCCCC#C ILLHQJIJCRNRCJ-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- YHLXPAFSBWGKTK-UHFFFAOYSA-N methanol;2-methylpropane-1,3-diol Chemical compound OC.OCC(C)CO YHLXPAFSBWGKTK-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GASFVSRUEBGMDI-UHFFFAOYSA-N n-aminohydroxylamine Chemical compound NNO GASFVSRUEBGMDI-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a cleaning liquid which does not contain fluoride and hydroxylamine and is used for removing photoresist etching residue, and constituents thereof. The low-etching cleaning liquid which does not contain the fluoride and the hydroxylamine and is used for removing the photoresist etching residue comprises (a) hydramine; (b) solvent; (c) water; (d) phenols; (e) alkynol ethoxyl compound; (f) hydrazine and derivatives thereof; and (g) polyhydric alcohols. With the low-etching cleaning liquid which does not contain the fluoride and the hydroxylamine and is used for removing the photoresist etching residue, cross-linked and hardened photoresist subjected to hard baking, dry etching, ashing and plasma injection to cause complicated chemical change can be rapidly removed, the photoresist residue on a metal line, a through hole and a metal gasket wafer can be removed, meanwhile, no attack is generated to a substrate, such as metal aluminum, metal copper and non-metal silicon dioxide. The cleaning liquid disclosed by the invention has favorable application prospect in the field of semiconductor wafer cleaning and the like.
Description
Technical field
The invention discloses photoresistance residual washing liquid, particularly relate to a kind of cleanout fluid not containing azanol and fluoride.
Background technology
In semiconductor components and devices manufacture process, the pattern manufacture of components and parts is necessary processing step by the coating of photoresist layer, exposure and imaging.Before last (namely the implanting and after etching at the coating of photoresist layer, imaging, ion) of patterning carries out next processing step, the residue of photoresist layer material need to thoroughly remove.Generally, the processing procedure of semiconductor device uses tens photoetching processes, owing to ion and the free radical of plasma etch gases cause the complex chemical reaction with photoresist, photoresist hardens with the crosslinking of inorganic matter rapidly so that photoresist layer becomes to not readily dissolve thus being more difficult to remove.So far generally use two-step method (dry ashing and wet etching) in the semiconductor manufacturing industry and remove this layer of photoresistance tunic.The first step utilizes dry ashing to remove the major part of photoresist layer (PR)；Second step utilizes composite corrosion inhibitor wet etching/cleaning remove and wash remaining photoresist layer, and its step is generally cleanout fluid and cleans/rinsing/dry.Polymer light resistance layer and the inorganic matter of residual can only be removed in this process, and infringement metal level such as aluminium lamination can not be attacked.
In current wet clean process, cleanout fluid with the most use is the cleanout fluid containing azanol class and fluorinated, and the Exemplary patents of azanol based cleaning liquid has US6319885, US5672577, US6030932, US6825156, US5419779 and US6777380B2 etc..Through updating, the corrosion rate of metallic aluminium is greatly reduced by its solution itself, but this based cleaning liquid is owing to using azanol, and azanol exists the problems such as single, explosive of originating.Although and existing fluorides cleanout fluid has had bigger improvement, such as US5,972,862, US6,828,289 etc., but still there is the corrosion that can not control metal and non-metallic substrate well simultaneously, after cleaning, easily cause the change of channel characteristics size；On the other hand due in some Semiconductor enterprises wet clean equipment be made up of quartz, and quartz is had corrosion and corrodes aggravation with the rising of temperature by fluorine-containing cleanout fluid, therefore there is the problem incompatible with existing quartz equipment and affect it and widely use.
Although above-mentioned two based cleaning liquids have relatively been applied successfully to semi-conductor industry, but due to its respective restriction and shortcoming, industry have developed the cleanout fluid of the 3rd class, and this based cleaning liquid neither contains azanol and also do not contain fluoride.As US5981454A discloses the acidic cleaning solution at 3.5-7 of the PH containing organic acid and hydramine, the significantly high photoresist that can remove metal level and conducting medium layer of this cleanout fluid.As US6103680A discloses the cleanout fluid containing low alkyl chain hydroxyl hydrazine, water, carboxylic acid compound and water-miscible organic solvent, this cleanout fluid is to metal no corrosion and can effectively remove the residue after plasma etching.This kind of azanol that neither contains or not the cleanout fluid of fluoride yet and had both solved that the source of azanol is single and the problem of safety and environmental protection aspect, solves again the problem that the nonmetal corrosion rate of fluorinated cleanout fluid is unstable.But often in use there is significant limitation in this based cleaning liquid.Although therefore disclosing some cleaning liquid compositions, but need and recently more need to prepare adaptive surface this based cleaning liquid wider array of.
Summary of the invention
The invention aims to provide the low cost semiconductor crystal wafer cleanout fluid of a kind of photoresistance residue can removed on wafer, it does not contain azanol and fluoride；Metal and nonmetallic corrosion rate is less；And with quartz hardware compatibility.
It is an aspect of the invention to provide a kind of photoresistance residual washing liquid, this cleanout fluid contains hydramine, solvent, water, phenols, alkynol class ethoxy compound, polyhydric alcohol, hydrazine and its derivative.Namely this photoresistance residual washing liquid at least includes following component:
I. hydramine
Ii. solvent
Iii. water
Iv. phenols
V. alkynol class ethoxy compound
Vi. polyhydric alcohol
Vii. hydrazine and its derivative.
And, wherein, aforementioned hydramine is preferably aliphatic hydramine, more preferably be one or more in monoethanolamine, N methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, N, N dimethyl ethylethanolamine, N (2 amino-ethyl) ethanolamine and diglycolamine.Concentration is preferably 10% 70%, it is preferable that 10 60%.
And, wherein, aforementioned solvents is the solvent that this area is conventional, it is advantageous to one or more in sulfoxide, sulfone, imidazolidinone, ketopyrrolidine, imidazolone, ether and amide.Wherein, described sulfoxide is preferably dimethyl sulfoxide；Described sulfone is preferably sulfolane；Described imidazolidinone is preferably 1,3 dimethyl 2 imidazolidinone；Described ketopyrrolidine is preferably N methyl pyrrolidone；Described imidazolone is preferably 1,3 dimethyl 2 imidazolone (DMI)；Described ether is preferably dipropylene glycol methyl ether；Described amide is preferably N, N dimethyl acetylamide.Concentration is preferably 10% 60% preferably 10% 50%.
And, wherein, foregoing phenolic is preferably polyhydric phenols, more preferably be one or more in catechol, hydroquinone, resorcinol, biphenyl 3 phenol, 5 methoxyl group pyrogallols, 5 tert-butyl o benzenetriols, 5 methylol pyrogallols.Concentration is preferably 0.1 10%；Preferably 0.5 5%.
And, wherein, aforementioned hydrazine and its derivative is preferably one or more in hydrazine hydrate, benzoyl hydrazine, 2 hydroxyethylhydrazines, carbohydrazide, salicylyl hydrazine, oxalyl two hydrazine, succinic acid hydrazide ii, malonyl hydrazine.Concentration is preferably 0.05 10%, it is preferable that 0.1 5%.
And, wherein, foregoing polyols is preferably alkyl polyols, more preferably be one or more in glycerol, tetramethylolmethane, xylitol, sorbitol, Diethylene Glycol, dipropylene glycol, 2 hydroxy methane 2 methyl 1,3 propylene glycol.Concentration is preferably 0.05 10%, it is preferable that 0.1 5%.
And, wherein, one or more in the aforementioned preferred propilolic alcohol ethoxy compound of alkynol class ethoxy compound, butynediols ethoxy compound, 2,4,7,9 tetramethyl 5 decine 4,7 diol ethoxylate.Concentration is preferably 0.05 5%, it is preferable that 0.1 3%.
And, wherein, aforementioned water concentration is preferably less than 40%, it is preferable that 5 35%.Water may preferably be deionized water, distilled water, ultra-pure water, or removed the water of foreign ion by its means.
Above-mentioned content is mass percentage content；The cleanout fluid of this removal photoetching glue residue does not contain abrasive grains, azanol, fluoride and oxidant.
Cleanout fluid in the present invention, it is possible to the photoresistance residue on cleaning wafer at 50 DEG C to 80 DEG C.Concrete grammar is as follows: immersed by the wafer containing photoresistance residue in the cleanout fluid in the present invention, after soaking the suitable time, dries up with high pure nitrogen after taking out rinsing at 50 DEG C to 80 DEG C.
The method have technical effect that:
1) cleanout fluid of the present invention passes through the efficient combination of phenols, polyhydric alcohol, hydrazine and its derivative, alkynol class ethoxy compound, can at the photoresistance residue effectively removed on metal wire (metal), through hole (via) and metal gasket (Pad) wafer simultaneously, it is achieved the suppression to metallic aluminium and nonmetal corrosion.
2) cleanout fluid of the present invention solves azanol in tradition azanol based cleaning liquid and originates the problem such as single, expensive, explosive；
3) cleanout fluid of the present invention due to its nonmetal corrosion rate relatively low；Solve the problem that the tradition nonmetal corrosion rate of fluorine based cleaning liquid is unstable, and compatible with the quartzy rinse bath that current semiconductor manufacturer commonly uses.
Detailed description of the invention
Advantages of the present invention is expanded on further below by specific embodiment, but protection scope of the present invention is not limited solely to following embodiment.
Agents useful for same of the present invention and raw material are all commercially.The cleanout fluid of the present invention be can be prepared by by the simple Homogeneous phase mixing of mentioned component.
The component of table 1 embodiment and comparative example cleanout fluid and content
Effect example
In order to investigate the cleaning situation of this based cleaning liquid further, present invention employs following technological means: be about to metal wire (metal) wafer containing photoresistance residue, through hole (via) wafer and metal gasket (Pad) wafer and immerse respectively in cleanout fluid, utilize constant temperature oscillator to vibrate 10～40 minutes with the frequency of vibration of about 60 revs/min at 50 DEG C to 80 DEG C, then dry up with high pure nitrogen after rinsing is washed.The cleaning performance of photoresistance residue and cleanout fluid are as shown in table 2 to the corrosion condition of wafer.
The wafer cleaning situation of table 2 section Example and comparative example
| Corrosion condition: | ◎ no corrosion； | Cleaning situation: | ◎ removes completely； | |
| Zero slightly corrodes； | Zero is a small amount of remaining； | |||
| △ moderate corrosion； | The more remnants of △； | |||
| × heavy corrosion. | × abundant residues. |
As can be seen from Table 2, metal wire (metal) wafer containing photoresistance residue, through hole (via) wafer and metal gasket (Pad) wafer are had good cleaning performance by the cleanout fluid of the present invention, use temperature range is wide, does not have corroding metal aluminum and nonmetal silicon dioxide simultaneously.From comparative example 1 and embodiment 1 it can be seen that being added without hydramine, the photoresistance residue of crystal column surface has more residue to be eliminated.From comparative example 2 and embodiment 2 it can be seen that formula lacks solvent can cause that the photoresistance residue on wafer cannot be completely removed totally.From comparative example 3 and embodiment 5 it can be seen that under the on all four situation of all the other components and cleaning condition, lacking phenols according to the heavy corrosion of paired metallic aluminium, cannot can remove the photoresistance residue on wafer totally completely simultaneously.From comparative example 4 with embodiment 6 it can be seen that, cleaning operation condition identical in other components is also identical, as being added without hydrazine and its derivative, then the corrosion of metallic aluminium can be produced.From comparative example 5 and embodiment 8 it can be seen that adding of polyhydric alcohol is all helpful to the protection of metallic aluminium and the removal of photoresistance residue.From comparative example 6 with embodiment 10 it can be seen that, the on all four situation of cleaning condition identical in other components, being added without propilolic alcohol ethoxy compound can affect the removal of photoresistance residue on wafer, causes that part photoresistance residue cannot be removed.From the comparative result of the above comparative example and embodiment it can be seen that the application cleanout fluid each component support mutually, coordination with one another such that it is able to remove photoresistance residue do not cause corrosion simultaneously for base material.
To sum up, the actively progressive effect of the present invention is in that: what the cleanout fluid of the present invention can remove the photoresistance residue on metal wire (metal), through hole (via) and metal gasket (Pad) wafer is substantially free of attack simultaneously for base material, has a good application prospect in fields such as cleaning semiconductor chips.
It should be appreciated that wt% of the present invention refers to weight/mass percentage composition.
Above specific embodiments of the invention being described in detail, but it is intended only as example, the present invention is not restricted to particular embodiments described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and replacement are also all among scope of the invention.Therefore, the equalization made without departing from the spirit and scope of the invention converts and amendment, all should contain within the scope of the invention.
Claims (26)
1. a photoresistance residual washing liquid, described cleanout fluid contains hydramine, solvent, water, phenols, alkynol class ethoxy compound, polyhydric alcohol, hydrazine and its derivative, and described cleanout fluid and does not contain fluoride and/or azanol.
2. cleanout fluid as claimed in claim 1, wherein, described hydramine is aliphatic hydramine.
3. cleanout fluid as claimed in claim 2, one or more in monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, N, N-dimethyl ethylethanolamine, N-(2-amino-ethyl) ethanolamine and diglycolamine of wherein said hydramine.
4. cleanout fluid as claimed in claim 1, wherein, described hydramine concentration is mass percent 10%-70%.
5. cleanout fluid as claimed in claim 4, wherein, described hydramine concentration is mass percent 10-60%.
6. cleanout fluid as claimed in claim 1, wherein, described solvent is selected from one or more in sulfoxide, sulfone, imidazolidinone, ketopyrrolidine, imidazolone, ether and amide.
7. cleanout fluid as claimed in claim 6, wherein, described sulfoxide is dimethyl sulfoxide；Described sulfone is sulfolane；Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone；Described ketopyrrolidine is N-Methyl pyrrolidone；Described imidazolone is DMI；Described ether is dipropylene glycol methyl ether；Described amide is DMAC N,N' dimethyl acetamide.
8. cleanout fluid as claimed in claim 1, wherein, described solvent strength is mass percent 10%-60%.
9. cleanout fluid as claimed in claim 8, wherein, described solvent strength is mass percent 10%-50%.
10. cleanout fluid as claimed in claim 1, wherein, described phenols is polyhydric phenols.
11. cleanout fluid as claimed in claim 10, wherein, described phenols is one or more in catechol, hydroquinone, resorcinol, biphenyl 3 phenol, 5-methoxyl group pyrogallol, 5-tert-butyl o benzenetriol, 5-methylol pyrogallol.
12. cleanout fluid as claimed in claim 1, wherein, described phenolic concentration is mass percent 0.1-10%.
13. cleanout fluid as claimed in claim 12, wherein, described phenolic concentration is mass percent 0.5-5%.
14. cleanout fluid as claimed in claim 1, wherein, described hydrazine and its derivative is one or more in hydrazine hydrate, benzoyl hydrazine, 2-hydroxyethylhydrazine, carbohydrazide, salicylyl hydrazine, oxalyl two hydrazine, succinic acid hydrazide ii, malonyl hydrazine.
15. cleanout fluid as claimed in claim 1, wherein, described hydrazine and its derivative concentration is mass percent 0.05-10%.
16. cleanout fluid as claimed in claim 15, wherein, described hydrazine and its derivative concentration is mass percent 0.1-5%.
17. cleanout fluid as claimed in claim 1, wherein, described polyhydric alcohol is alkyl polyols.
18. cleanout fluid as claimed in claim 17, wherein, described polyhydric alcohol is glycerol, tetramethylolmethane, xylitol, sorbitol, Diethylene Glycol, dipropylene glycol, 2-hydroxy methane-2-methyl isophthalic acid, one or more in 3 propylene glycol.
19. cleanout fluid as claimed in claim 1, wherein, described polyhydric alcohol concentration is mass percent 0.05-10%.
20. cleanout fluid as claimed in claim 19, wherein, described polyhydric alcohol concentration is mass percent 0.1-5%.
21. cleanout fluid as claimed in claim 1, wherein, described alkynol class ethoxy compound is propilolic alcohol ethoxy compound, butynediols ethoxy compound, 2,4,7,9-tetramethyl-5-decine-4, one or more in 7-diol ethoxylate.
22. cleanout fluid as claimed in claim 1, wherein, described alkynol class ethoxy compound concentration is mass percent 0.05-5%.
23. cleanout fluid as claimed in claim 22, wherein, described alkynol class ethoxy compound concentration is mass percent 0.1-3%.
24. cleanout fluid as claimed in claim 1, wherein, described water concentration is that mass percent is less than 40%.
25. cleanout fluid as claimed in claim 1, wherein, described water concentration is mass percent 5-35%.
26. the cleanout fluid as described in any one of claim 1-26 is in the application removing photoresistance residue.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410831546.1A CN105785725A (en) | 2014-12-23 | 2014-12-23 | Photoresist residue cleaning liquid |
| TW104141061A TW201623599A (en) | 2014-12-23 | 2015-12-08 | Cleaning liquid for removing photoetching residue |
| PCT/CN2015/000897 WO2016101333A1 (en) | 2014-12-23 | 2015-12-14 | Photoresist residue cleaning fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410831546.1A CN105785725A (en) | 2014-12-23 | 2014-12-23 | Photoresist residue cleaning liquid |
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|---|---|
| CN105785725A true CN105785725A (en) | 2016-07-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410831546.1A Pending CN105785725A (en) | 2014-12-23 | 2014-12-23 | Photoresist residue cleaning liquid |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN105785725A (en) |
| TW (1) | TW201623599A (en) |
| WO (1) | WO2016101333A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018099112A1 (en) * | 2016-11-29 | 2018-06-07 | 安集微电子科技（上海）股份有限公司 | Fluorine-containing cleaning liquid |
| CN108255027A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子（上海）有限公司 | A kind of photoresist cleaning solution |
| TWI629353B (en) * | 2016-09-30 | 2018-07-11 | 日商松下知識產權經營股份有限公司 | Receptor stripping solution |
| CN112592777A (en) * | 2020-12-03 | 2021-04-02 | 湖北兴福电子材料有限公司 | Deep groove cleaning solution after 3D NAND structure piece dry etching |
| WO2021135804A1 (en) * | 2019-12-31 | 2021-07-08 | 安集微电子科技（上海）股份有限公司 | Cleaning solution for plasma etching residue |
| CN113138544A (en) * | 2020-01-20 | 2021-07-20 | 株式会社Lg化学 | Stripper composition for removing photoresist and method for stripping photoresist using the same |
| CN115975746A (en) * | 2022-12-29 | 2023-04-18 | 陕西瑞益隆科环保科技有限公司 | Scale inhibitor for coking plant equipment and preparation method thereof |
| WO2023133876A1 (en) * | 2022-01-17 | 2023-07-20 | 嘉庚创新实验室 | Fluorine-free cleaning agent, preparation method therefor and use thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111381458B (en) * | 2018-12-27 | 2024-04-30 | 安集微电子科技（上海）股份有限公司 | Photoresist cleaning solution |
| CN115018068B (en) * | 2022-05-30 | 2023-02-17 | 福建天甫电子材料有限公司 | Automatic batching system and batching method for production of photoresist cleaning solution |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6103680A (en) * | 1998-12-31 | 2000-08-15 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues |
| US20050032657A1 (en) * | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
| WO2006113621A2 (en) * | 2005-04-15 | 2006-10-26 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| CN102012645A (en) * | 2010-12-24 | 2011-04-13 | 东莞市智高化学原料有限公司 | Photoresist stripping solution |
-
2014
- 2014-12-23 CN CN201410831546.1A patent/CN105785725A/en active Pending
-
2015
- 2015-12-08 TW TW104141061A patent/TW201623599A/en unknown
- 2015-12-14 WO PCT/CN2015/000897 patent/WO2016101333A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI629353B (en) * | 2016-09-30 | 2018-07-11 | 日商松下知識產權經營股份有限公司 | Receptor stripping solution |
| WO2018099112A1 (en) * | 2016-11-29 | 2018-06-07 | 安集微电子科技（上海）股份有限公司 | Fluorine-containing cleaning liquid |
| CN108255027A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子（上海）有限公司 | A kind of photoresist cleaning solution |
| CN108255027B (en) * | 2016-12-28 | 2024-04-12 | 安集微电子（上海）有限公司 | Photoresist cleaning solution |
| WO2021135804A1 (en) * | 2019-12-31 | 2021-07-08 | 安集微电子科技（上海）股份有限公司 | Cleaning solution for plasma etching residue |
| CN113138544A (en) * | 2020-01-20 | 2021-07-20 | 株式会社Lg化学 | Stripper composition for removing photoresist and method for stripping photoresist using the same |
| CN112592777A (en) * | 2020-12-03 | 2021-04-02 | 湖北兴福电子材料有限公司 | Deep groove cleaning solution after 3D NAND structure piece dry etching |
| CN112592777B (en) * | 2020-12-03 | 2021-09-07 | 湖北兴福电子材料有限公司 | Deep groove cleaning solution after 3D NAND structure piece dry etching |
| WO2023133876A1 (en) * | 2022-01-17 | 2023-07-20 | 嘉庚创新实验室 | Fluorine-free cleaning agent, preparation method therefor and use thereof |
| CN115975746A (en) * | 2022-12-29 | 2023-04-18 | 陕西瑞益隆科环保科技有限公司 | Scale inhibitor for coking plant equipment and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201623599A (en) | 2016-07-01 |
| WO2016101333A1 (en) | 2016-06-30 |
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Application publication date: 20160720 |