CN105762305A - Composite anode, QLED device, and preparation methods thereof - Google Patents
Composite anode, QLED device, and preparation methods thereof Download PDFInfo
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- CN105762305A CN105762305A CN201610274973.3A CN201610274973A CN105762305A CN 105762305 A CN105762305 A CN 105762305A CN 201610274973 A CN201610274973 A CN 201610274973A CN 105762305 A CN105762305 A CN 105762305A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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Abstract
The invention discloses a composite anode, a QLED device, and preparation methods thereof. The preparation method for a composite anode comprises: step A, PMMA solution spinning is carried out on a substrate and drying is carried out; step B, a AgNWs solution is dripped on the PMMA surface and the AgNWs solution is spread uniformly on the PMMA surface, and then drying is carried out; step C, CPI spinning is carried out on the AgNWs surface and then solidification is carried out; and step D, PMMA peeling is carried out to form a AgNWs-CPI composite anode. According to the invention, because the CPI spinning is carried out on the AgNWs surface, the AgNWs is embedded into the CPI, so that the smooth AgNWs-CPI composite anode structure is obtained; and thus the leak current is reduced and the QLED performance is enhanced. Besides, the prepared AgNWs-CPI composite anode has certain flexibility and has the proper bending performance.
Description
Technical field
The present invention relates to luminescence display technical field, particularly relate to a kind of composite anode, QLED device and preparation method thereof.
Background technology
Light emitting diode with quantum dots (QLED), because possessing the plurality of advantages such as high brightness, low-power consumption, wide colour gamut, easy processing, obtains and pays close attention in illumination and display field widely and study in recent years.Through development for many years, QLED technology obtains huge development.
As shown in Figure 1, QLED is typically to prepare using ito substrate as carrier, it includes the most successively: glass 10, ito anode 20, hole transmission layer (HTL) 30, quantum dot light emitting layer (QD) 40, electron transfer layer (ETL) 50, negative electrode (Al) 60, due to ito anode 20 surface or edge out-of-flatness, and the distance between negative electrode and anode is less, so the out-of-flatness position at ito anode 20 surface or edge is directly connected with negative electrode 60, result in a large amount of leakage current.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of composite anode, QLED device and preparation method thereof, it is intended to the problem that solution prior art Anodic surface or edge out-of-flatness cause a large amount of leakage current occur.
Technical scheme is as follows:
A kind of preparation method of composite anode, wherein, including step:
A, on substrate spin coating PMMA solution, and dry；
B, then drip AgNWs solution at PMMA surface, and make AgNWs solution sprawl uniformly at PMMA surface, be then dried；
C, at one layer of CPI of AgNWs surface spin coating, then carry out cured；
D, then peel off PMMA, form AgNWs-CPI composite anode.
The preparation method of described composite anode, wherein, in described step B, makes AgNWs solution sprawl uniformly by upset substrate.
The preparation method of described composite anode, wherein, in described step D, is soaked in described substrate in acetone, to peel off PMMA.
The preparation method of described composite anode, wherein, described CPI is water white transparency material.
The preparation method of described composite anode, wherein, in described step C, condition of cure is 120 ~ 180 DEG C, solidification 40 ~ 80min.
The preparation method of described composite anode, wherein, in described step B, drying condition is infrared radiation 6 ~ 16min.
The preparation method of described composite anode, wherein, in described step A, drying temperature is 100 ~ 140 DEG C.
A kind of composite anode, wherein, uses preparation method as above to make.
A kind of preparation method of QLED device, wherein, including step:
A, on substrate spin coating PMMA solution, and dry；
B, then drip AgNWs solution at PMMA surface, and make AgNWs solution sprawl uniformly at PMMA surface, be then dried；
C, at one layer of CPI of AgNWs surface spin coating, then carry out cured；
D, then peel off PMMA, form AgNWs-CPI composite anode；
E, in described AgNWs-CPI composite anode surface deposition of hole transport layer；
F, hole transmission layer surface deposit quantum dot light emitting layer；
G, it is sequentially depositing electron transfer layer and electron injecting layer on quantum dot light emitting layer surface；
H, last evaporation cathode obtain QLED device.
A kind of QLED device, wherein, uses preparation method as above to make.
Beneficial effect: the present invention is by AgNWs(silver nanowires, nano silver wire) one layer of CPI(colorless of spin coating on surface
Polyimide, water white pi), AgNWs is made to be embedded in inside CPI, thus obtain smooth AgNWs-CPI composite anode structure, and then reduction leakage current, improve QLED performance, in addition, AgNWs-CPI composite anode prepared by the present invention has certain flexibility, has appropriately curved performance.
Accompanying drawing explanation
Fig. 1 is the QLED device architecture schematic diagram that in prior art prepared by irregular ITO.
Fig. 2 is the preparation method flow chart of composite anode of the present invention.
Fig. 3 is the structural representation of composite anode of the present invention.
Fig. 4 is the preparation method flow chart of QLED device of the present invention.
Detailed description of the invention
The present invention provides a kind of composite anode, QLED device and preparation method thereof, and for making the purpose of the present invention, technical scheme and effect clearer, clear and definite, the present invention is described in more detail below.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
As in figure 2 it is shown, the preparation method preferred embodiment of a kind of composite anode that the present invention provides, it includes step:
S1, on substrate spin coating PMMA solution, and dry；
S2, then drip AgNWs solution at PMMA surface, and make AgNWs solution sprawl uniformly at PMMA surface, be then dried；
S3, at one layer of CPI of AgNWs surface spin coating, then carry out cured；
S4, then peel off PMMA, form AgNWs-CPI composite anode.
Specifically, also included before described step S1: substrate is carried out.
The process cleaned is specific as follows: is placed in order by substrate in acetone, washing liquid, deionized water and isopropanol and carries out ultrasonic cleaning, and each of the above step ultrasonic cleaning is both needed to continue about 15 minutes.After ultrasonic cleaning completes, substrate is positioned over dry for standby in cleaning oven.Substrate in the present invention is as a example by ito glass.
In described step S1, spin coating PMMA solution (polymethyl methacrylate solution) on substrate, then carry out drying and processing.Dry temperature and be preferably 100 ~ 140 DEG C, such as 120 DEG C, finally make PMMA form network structure.
In described step S2, by spin coating, the substrate of PMMA solution is placed on Mayer-rod device (wheat strangles rod coating device), dropping AgNWs solution rapidly, and begins turning device, makes AgNWs solution uniform spreading on PMMA launch to come.After sprawling uniformly, starting infrared radiation, make AgNWs solution be dried, irradiation time is preferably 6 ~ 16min, such as 10min.
In described step S3, one layer of CPI of spin coating on the substrate deposited AgNWs, i.e. at one layer of CPI of AgNWs surface spin coating, then carry out cured.Condition of cure is preferably at 120 ~ 180 DEG C, solidifies 40 ~ 80min, such as, solidify 60min at 150 DEG C.
CPI in the present invention is preferably water white transparency material, and has enough mechanical performances and can support the thin film being deposited thereon.
In described step S4, described substrate is soaked in acetone, to peel off PMMA.Preferably soak 1 ~ 3min, such as 2min, to form final AgNWs-CPI composite anode.
The present invention, by forming one layer of CPI of spin coating on cancellated AgNWs, makes AgNWs be embedded in inside CPI, so that AgNWs planarizing, finally gives smooth AgNWs-CPI composite anode structure.The composite anode structure of the present invention can reduce leakage current, thus improves QLED device performance, and the preparation method of the present invention is simple, it is simple to volume production, can be used for preparing QLED device on a large scale.It addition, the AgNWs-CPI composite anode prepared by the present invention also has certain flexibility, so can be appropriately curved, can be used to make flexible QLED device.
The present invention also provides for a kind of composite anode, and it uses preparation method as above to make.
As it is shown on figure 3, the preparation method preferred embodiment of a kind of QLED device provided by the present invention, it includes step:
S1, on substrate spin coating PMMA solution, and dry；
S2, then drip AgNWs solution at PMMA surface, and make AgNWs solution sprawl uniformly at PMMA surface, be then dried；
S3, at one layer of CPI of AgNWs surface spin coating, then carry out cured；
S4, then peel off PMMA, form AgNWs-CPI composite anode；
S5, in described AgNWs-CPI composite anode surface deposition of hole transport layer；
S6, hole transmission layer surface deposit quantum dot light emitting layer；
S7, it is sequentially depositing electron transfer layer and electron injecting layer on quantum dot light emitting layer surface；
S8, last evaporation cathode obtain QLED device.
Detail about above-mentioned steps S1 ~ S4 is identical with aforesaid composite anode preparation method flow process, therefore repeats no more.
In described step S5, at AgNWs-CPI composite anode 170(as shown in Figure 4, it includes AgNWs 120 and CPI 110) surface one layer of hole transmission layer 130 of deposition, the thickness of this hole transmission layer 130 is 0-100nm, preferably 40-50nm, such as 45nm, then carry out heat treatment.
In described step S6, after the substrate cooling that previous step processes, quantum dot light emitting layer 140 being deposited on hole transmission layer 130 surface, its thickness is preferably 10-100nm, such as 50nm.After the deposition of this step completes, place a substrate in and heat 10 minutes on the warm table of 80 DEG C, remove the solvent of residual.
In described step S7, be sequentially depositing electron transfer layer and electron injecting layer (the two conjunction is designated as 150) on quantum dot light emitting layer 140 surface, wherein, electron transfer layer preferably has the N-shaped zinc oxide of high electronic transmission performance, its preferably thickness is 30-60nm, such as 45nm；Electron injecting layer can select to have the metals such as Ca or Ba of low work function, it is also possible to selects CsF, LiF or CsCO3Deng compound, it is also possible to be other Electrolyte type material.
In described step S8, being placed in by the substrate having deposited each functional layer in evaporation storehouse by mask plate heat evaporation layer of metal is silver-colored or aluminum is as negative electrode 160, the thickness of negative electrode 160 can be 80 ~ 120nm, such as 100nm.So far, prepared by QLED device.
The present invention also provides for a kind of QLED device, and it uses preparation method as above to make.
In sum, the present invention is by one layer of CPI of spin coating on AgNWs surface, AgNWs is made to be embedded in inside CPI, thus obtain smooth AgNWs-CPI composite anode structure, and then reduction leakage current, improve QLED performance, in addition, AgNWs-CPI composite anode prepared by the present invention has certain flexibility, has appropriately curved performance.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can be improved according to the above description or convert, all these modifications and variations all should belong to the protection domain of claims of the present invention.
Claims (10)
1. the preparation method of a composite anode, it is characterised in that include step:
A, on substrate spin coating PMMA solution, and dry；
B, then drip AgNWs solution at PMMA surface, and make AgNWs solution sprawl uniformly at PMMA surface, be then dried；
C, at one layer of CPI of AgNWs surface spin coating, then carry out cured；
D, then peel off PMMA, form AgNWs-CPI composite anode.
The preparation method of composite anode the most according to claim 1, it is characterised in that in described step B, makes AgNWs solution sprawl uniformly by upset substrate.
The preparation method of composite anode the most according to claim 1, it is characterised in that in described step D, is soaked in described substrate in acetone, to peel off PMMA.
The preparation method of composite anode the most according to claim 1, it is characterised in that described CPI is water white transparency material.
The preparation method of composite anode the most according to claim 1, it is characterised in that in described step C, condition of cure is 120 ~ 180 DEG C, solidification 40 ~ 80min.
The preparation method of composite anode the most according to claim 1, it is characterised in that in described step B, drying condition is infrared radiation 6 ~ 16min.
The preparation method of composite anode the most according to claim 1, it is characterised in that in described step A, drying temperature is 100 ~ 140 DEG C.
8. a composite anode, it is characterised in that use the preparation method as described in any one of claim 1 ~ 7 to make.
9. the preparation method of a QLED device, it is characterised in that include step:
A, on substrate spin coating PMMA solution, and dry；
B, then drip AgNWs solution at PMMA surface, and make AgNWs solution sprawl uniformly at PMMA surface, be then dried；
C, at one layer of CPI of AgNWs surface spin coating, then carry out cured；
D, then peel off PMMA, form AgNWs-CPI composite anode；
E, in described AgNWs-CPI composite anode surface deposition of hole transport layer；
F, hole transmission layer surface deposit quantum dot light emitting layer；
G, it is sequentially depositing electron transfer layer and electron injecting layer on quantum dot light emitting layer surface；
H, last evaporation cathode obtain QLED device.
10. a QLED device, it is characterised in that use preparation method as claimed in claim 9 to make.
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| CN201610274973.3A CN105762305A (en) | 2016-04-28 | 2016-04-28 | Composite anode, QLED device, and preparation methods thereof |
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Cited By (3)
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| CN108447998A (en) * | 2018-03-19 | 2018-08-24 | 京东方科技集团股份有限公司 | Quantum dot light emitting device and preparation method, quantum dot light emitting display device |
| CN110429202A (en) * | 2019-07-18 | 2019-11-08 | 武汉华星光电半导体显示技术有限公司 | A kind of flexibility OLED display panel, production method and intelligent wearable device |
| CN110689995A (en) * | 2019-09-24 | 2020-01-14 | 深圳市善柔科技有限公司 | Silver nanowire conductive film and preparation method thereof |
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Application publication date: 20160713 |