CN105762271A - Virtual superconductor with resistivity being approximate to zero - Google Patents

Abstract

The present invention discloses a virtual superconductor with a resistivity being approximate to zero. The virtual superconductor comprises a semiconductor, an insulating thermal-protective layer, and an external connecting wire. According to the semiconductor, the intentional uneven doping is implemented along a macroscopic current direction, and an uneven semiconductor property distribution is formed. The end parts of the semiconductor are connected to the external connecting wire to be the lead-in and lead-out ends of current. The insulating thermal-protective layer coats the semiconductor and coats the connection part of the semiconductor and the external connecting wire, and thermal insulation is formed by the semiconductor and an external environment. According to the virtual superconductor, the non-uniformly doped semiconductor heat adsorption generation is used, a voltage increment and a power increment are outputted, and the compensation of resistance Joule heat consumption voltage and electric power are realized.

Description

A kind of resistivity is approximately the virtual superconductor of zero

Technical field

The present invention relates to the technical field of semiconductors that heat energy is changed mutually with electric energy, refer in particular to a kind of resistivity and be approximately the virtual superconductor of zero.

Background technology

In prior art, superconductor is required for cooling to below extremely low superconduction threshold temperature and just realizes superconduction, and it is comparatively difficult that it realizes condition, especially keeps low temperature comparatively difficult, and use cost is higher, and superconductor itself is bulky, it is difficult to extensive popularization and application.Prior art typically looks at finds the new material that threshold temperature is higher, but makes little progress, and threshold temperature is still very low, it is difficult to meet application demand.

The quasiconductor of non-uniform doping itself can realize heat energy in higher efficiency--> conversion of electric energy, with resistance produce Joule heat electricity--> heat process contrary, utilize this characteristic of quasiconductor, can the release of cancellation current Joule heat all the time within the specific limits, show as resistance to reduce, even significantly reducing, the resistance value approximate superconductor close to zero, this case thus produces.

Summary of the invention

It is an object of the invention to provide a kind of resistivity and be approximately the virtual superconductor of zero, utilize the heat absorption generating of non-uniform doping quasiconductor, output voltage increment and electrical power increment, it is achieved the compensation to resistance Joule heat attrition voltage and electrical power.

For reaching above-mentioned purpose, the solution of the present invention is:

A kind of resistivity is approximately the virtual superconductor of zero, including quasiconductor, insulated thermal insulating layer and external connecting leads；Intentional non-uniform doping implemented by quasiconductor along macroscopic electrical current direction, forms uneven semiconductor properties distribution；Semiconductor end connects external connecting leads respectively as the leading-in end of electric current and exit；Insulated thermal insulating layer cladding on the semiconductor and is coated on quasiconductor and external connecting leads junction, and quasiconductor is formed with external environment condition and is thermally isolated.

Further, electric-insulation heat-conduction layer is set between insulated thermal insulating layer and quasiconductor；When quasiconductor is set to multiple, electric-insulation heat-conduction layer is set between adjacent quasiconductor.

Further, the semiconductor properties of external connecting leads is identical with connected semiconductor end semiconductor properties.

Further, implement whole quasiconductor of non-uniform doping or same all sections be divided into after multistage or segment section quasiconductor, implement along same macroscopic electrical current direction that impurity concentration is dull to be increased or the intentional non-uniform doping of quasiconductor that dullness is continuously reduced processes continuously；This whole or this section of quasiconductor after doping treatment, pass through along macroscopic electrical current vector positive direction and possess from P-to P+, or from N+ to N-, or the feature of the impurity concentration dullness continuous transition change from N to P, the semiconductor properties degree of strength at two ends or attribute type possess difference.

Further, the sense of current series connection 2 non-uniform dopings quasiconductor time, the doping content at the quasiconductor two ends of any one whole monotone variation doping, with the error of the opposite ends average doping concentration of series connection direction all same whole monotone variation doped semiconductors, with ratio ± 50% of this end average doping concentration；The doping content at any one Semiconductor segment two ends of monotone variation doping implemented by a piece quasiconductor after being divided into multistage, the error of the same average doping concentration that are divided into the Semiconductor segment opposite ends of multistage after implementing monotone variation doping all with series connection direction, with ratio ± 50% of this end average doping concentration.

Further, semiconductor arrangement is independent one, and both sides are connected with external circuit, or is configured to more than two be mutually connected in series from beginning to end, and two quasiconductors of outermost are connected with external circuit respectively；It is configured to independent one and independently carry out monotone variation doping after being divided into multistageTime, ratio ± 50% of any one section of length implementing monotone variation doped segment and the average length of all monotone variation doped segment；When quasiconductor arranged in series is more than two, wherein ratio ± 50% of the average length of the Semiconductor segment of the length non-uniform doping same with all enforcements of the Semiconductor segment of certain enforcement non-uniform doping any.

Further, semiconductor arrangement is parallel with one another more than two, and two folded with semiconductor-on-insulator parallel layers or draw close side by side, or mutually reverses, and is separated by insulating heat-conduction material each other and remains electrically isolated from.

Further, the sense of current configures more than two serial semiconductor, be perpendicular to the sense of current two more parallel quasiconductors of configuration simultaneously.

Further, it is perpendicular to M the quasiconductor that macroscopic electrical current direction is mutually close side by side, M is > positive integer of 1, take the middle part of former and later two maximum dopant concentration drop nodes being wherein in other quasiconductor closest to the node location that the doping content drop of integer amount the quasiconductor of M/2 is maximum, site error ± 20%；Or M quasiconductor is according to the far and near order of neighbor distance, the maximum node location of respective doping content drop is equally spaced to one another and staggers, site error ± 30%.Wherein, taking wherein integer amount quasiconductor closest to M/2 is: when M is even number, directly taking M/2, when M is odd number, the integer taking M/2 business adds 1, and when being 5 such as M, business is 2.5, and the integer 2 now taking business adds 1, namely 3.

Further, semiconductor material is hard, or is soft, and each quasiconductor current cross-section is circular or rectangle, and each quasiconductor outward appearance is film like or filament shape.

Further, adjust non-uniform doping quasiconductor doping content rate of change in sense of current unit length, or adjust initial doping content basis, or adjust average doping concentration, to regulate the equilibrium temperature in portion in duty dificiency in lower-JIAO quasi-superconductor body；In whole work process, arithmetic mean of instantaneous value according to the real work electric current I of each time period, or root-mean-square value, determine levels of current I0, adjust the doping content rate of change in configuring semiconductor unit length or initial doping content basis, or average doping concentration, making under this I0 levels of current, the horizontal Ts of quasiconductor actual temperature after virtual superconductor internal temperature balance and stability, with gap ± 30 DEG C of ambient temperature Te.

After adopting such scheme, the semiconductor properties of external connecting leads of the present invention is identical with connected semiconductor end semiconductor properties；Insulated thermal insulating layer cladding on the semiconductor and is coated on quasiconductor and external connecting leads junction, and quasiconductor is formed with external environment condition and is thermally isolated.

Quasiconductor by generation Joule heat under condition, a part of electrical power of corresponding consumption, produces corresponding Joule heat power Qi at electric current, it is understood that for when electric current I, correspondence consumes a part of voltage Ui.

Intentional non-uniform doping implemented by quasiconductor along macroscopic electrical current direction, forms uneven semiconductor properties distribution, with the whole of intentional non-uniform doping electric arm section or at least some of for heat absorption position, suck thermal power and carries out thermo-electric conversion.Utilize semiconductor heat electrical effect to generate electricity, by semiconductor absorber temperature thermal energy, be converted to electric energy, it is understood that for when electric current I, producing a voltage increment Uo, a part of electrical power P o of corresponding output along a direction.

Quasiconductor is while electric current flows through, and both attrition voltage Ui produced Joule heat power Qi, generating of simultaneously absorbing heat again, produced voltage increment Uo and electromotive power output Po.The electrical power that resistance consumes merely is supplemented by the electrical power of the generation that generated electricity, and is equal to resistance and reduces.

Quasiconductor produces and the voltage of consumption is close to equal, i.e. Uo ≈ Ui, the resistance heating power consumption of this quasiconductor is close to zero, and equivalent resistance R ' in circuit diminishes, and close to zero, is an approximate virtual superconductor.

Accompanying drawing explanation

Fig. 1 a to Fig. 1 c is one whole different attribute doping content of semiconductor direction schematic diagram of the present invention；

Fig. 2 a to Fig. 2 c is that the present invention one is divided into multistage different attribute doping content of semiconductor direction schematic diagram；

Fig. 3 is the structural representation of the present invention；

Fig. 4 a to Fig. 4 c is quasiconductor two ends of the present invention and external connecting leads connection diagram；

Fig. 5 is the structural representation of first embodiment of the invention；

Fig. 6 is the structural representation of second embodiment of the invention；

Fig. 7 is the structural representation of third embodiment of the invention.

Label declaration

Quasiconductor 1 insulated thermal insulating layer 2

External connecting leads 3 electric-insulation heat-conduction layer 4.

Detailed description of the invention

Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.

Consulting shown in Fig. 1 a to Fig. 7, a kind of resistivity that the present invention discloses is approximately the virtual superconductor of zero, including quasiconductor 1, insulated thermal insulating layer 2 and external connecting leads 3.

Intentional non-uniform doping implemented by quasiconductor 1 along macroscopic electrical current direction, forms uneven semiconductor properties distribution, as shown in Fig. 1 a to Fig. 1 c and Fig. 2 a to Fig. 2 c.

Quasiconductor 1 two ends connect external connecting leads 3 respectively, it is preferred to: the semiconductor properties of external connecting leads 3 is identical with connected quasiconductor 1 end semiconductor properties, as shown in Fig. 4 a and Fig. 4 b.Usual external connecting leads 3 is plain conductor, as illustrated in fig. 4 c.Because be not easily found the identical external connecting leads of semiconductor properties 3 in actual implementation process, in some instances it may even be possible to be metal or other is almost without the conductor of obvious semiconductor properties, thus what this required to be difficult to often directly to reach.And, even if reaching this requirement, although the characteristic of whole virtual superconductor is maintained preferably, but wire finally needs for being connected to load or other metallic conductor etc., also there will be the drop of semiconductor properties, it will cause occurring Peltier heat and Thomson heat loss in other position outside, for whole circuit, virtual superconductor is only comparable to power attenuation to move outside, but actual could not eliminate or reduce, just not have obvious meaning.Therefore the description of heat conduction measure can be related to after this specification, it is possible to reduce the requirement standard connecting wire semiconductor properties.Even if because connecting end there is obvious semiconductor properties drop, obvious thermoelectrical potential attribute drop, heating or heat absorption can be formed, but it is because the thermal diffusion effect of heat-conducting layer, the variations in temperature impact that can cause than the Process of absorption or liberation of heat of relatively evenly end in smoothing junction, reduces the impact on virtual superconductor performance.

Insulated thermal insulating layer 2 is coated on quasiconductor 1 and is coated on quasiconductor 1 and external connecting leads 3 junction, and quasiconductor 1 is formed with external environment condition and is thermally isolated.

Quasiconductor 1 by generation Joule heat under condition, a part of electrical power of corresponding consumption, produces corresponding Joule heat power Qi at electric current, it is understood that for when electric current I, correspondence consumes a part of voltage Ui.

Quasiconductor 1, with the whole of intentional non-uniform doping electric arm section or at least some of for heat absorption position, suck thermal power and carries out thermo-electric conversion.Utilize quasiconductor 1 pyroelectric effect to generate electricity, absorb temperature thermal energy by quasiconductor 1, be converted to electric energy, it is understood that for when electric current I, producing a voltage increment Uo, a part of electrical power P o of corresponding output along a direction.

Quasiconductor 1 is while electric current flows through, and both attrition voltage Ui produced Joule heat power Qi, generating of simultaneously absorbing heat again, produced voltage increment Uo and electromotive power output Po.The electrical power that resistance consumes merely is supplemented by the electrical power of the generation that generated electricity, and is equal to resistance and reduces.Quasiconductor 1 produces and the voltage that consumes is close to equal, i.e. Uo ≈ Ui, the resistance heating power consumption of this quasiconductor 1, close to zero, is an approximate virtual superconductor.

In the right direction in order to produce, sizeable voltage increment Uo, offset the supply voltage Ui of resistance consumption, whole of quasiconductor 1 or segment section must be correctly oriented enforcement continuous monotone variation doping, it is specially and implements intentional non-uniform doping along macroscopic view positive current direction vector, form uneven semiconductor properties distribution.

For one whole quasiconductor 1, if P type, then along macroscopic view positive current direction vector from input one end to output other end dullness consecutive variations doping, possesses the distribution of the progressively transition of the semiconductor properties from P-to P+；If N-type, then same direction possesses the property distribution of the progressively transition from N+ to N-from input one end to the output other end；If there are two kinds of doping types of P and N simultaneously, then same direction possesses the distribution of progressively transition from N to P from input one end to the output other end.Must assure that above-mentioned doping treatment direction, just can ensure that electric current passes through quasiconductor in process and can produce equidirectional voltage increment Uo.

Same quasiconductor 1 is divided into multistage, as being divided into M section (M is the integer more than 1), each of which section is all along macroscopic view positive current direction vector, from the original position of input side to the final position of output side, implement the doping treatment of the continuous monotone variation of impurity concentration so that the semiconductor properties power at each section of forward and backward two ends forms ejusdem generis difference.

If there being many quasiconductors 1, quasiconductor 1 type is likely to identical, as being all P type or being all N-type, it is also possible to different, as some is P type, some is N-type, nevertheless, along the direction of same macroscopical positive current vector, will realize above-mentioned doping treatment measure.

Once after configuration well, the direction of positive current vector can not be changed, otherwise in opposite direction or variant with semiconductor properties transition change, will lose the ability of heat absorption generating, therefore the electric current input of virtual superconductor, outfan are fixed-directions, do not allow reverse use.

Insulated thermal insulating layer 2 possesses high resistivity and little thermal conductivity, the quasiconductor 1 of all transmission electric currents is wrapped up, and after quasiconductor 1 welds with foreign current or wire or alternate manner has electrically connected, this position is wrapped up, block the heat exchange with external environment condition.

Positive current vector current crosses quasiconductor 1, and quasiconductor 1 implements the continuous gradient doping in dull direction, quasiconductor 1 heat absorption generating, also can produce Joule heat simultaneously.Assume Joule heat power consumption voltage Ui0, initial stage electric current I0, ambient temperature T0, Joule heat power and Endothermic power are just equal, then heat release=heat absorption that this section of semiconductor lead is total, completely not consumption of electric power, Ui0=Uo0, the Uio consumed is completely supplementary by Uo0, and resistance shows as zero, it is achieved that virtual superconducting state.

But attrition voltage Ui, electric current I in other words, and what the size of ambient temperature T was not always fixed, such as initial stage attrition voltage Ui > Uo, heating is more than heat absorption, and quasiconductor heats up gradually, and the temperature after balance is higher than ambient temperature, shed heat outwardly will be continued, be equal to a part of Joule heat power of continued depletion.Whereas if initial stage Ui < Uo, then equilibrium temperature declines, and lower than ambient temperature, continues to absorb heat from external environment condition, is equal to and continues the output that generates electricity.Ambient temperature diminishes as T1 (T1 < T0) from T0 for another example, the thermoelectrical potential absolute value of each position of quasiconductor can decline therewith, therefore whole section of quasiconductor 1 thermoelectrical potential rate of change also can decline, generating capacity of absorbing heat when same I0 can weaken, output increment voltage Uo1 can reduce, and less than the actual resistance R voltage Ui1 consumed, will therefore show whole section of quasiconductor and externally to discharge a part of Joule heat, virtual superconducting state originally is destroyed, or deleterious.

If T0 uprises as T2, quasiconductor 1 thermoelectrical potential change slope becomes greatly, and heat absorption capacity becomes by force, from environment, suck a part of thermal power generate electricity, its output voltage Uo2 > Ui2, incremental voltage can be formed, it is negative value that external circuit is characterized as resistance, is actually the output that generates electricity.Although increment generation, not electric consumption energy, but the lifting of load voltage is likely to exceed on the contrary the running voltage that load allows.Therefore, in open thermal environment, or in the undesirable semi-open thermal environment of isolation effect, environmental temperature fluctuation, or size of current fluctuation, all can cause that originally ideal approximate superconducting state is destroyed, all be unfavorable for maintaining the continual and steady of superconducting state.

Solution is exactly strengthen the ability being externally thermally isolated, as when desirable 100% is externally thermally isolated, no matter how high ambient temperature is, no matter how little electric current I is much or, in a bit of time at galvanization initial stage, Joule heat power and the Endothermic power possibility of consumption cannot be agreed with, and resistance shows as bigger than normal, or less than normal, or resistance is any one of negative generating state.But regardless of A-stage, after sufficiently long a period of time, the actual temperature of quasiconductor can reach an equilibrium state, because thermal isolation complete in outside, this equilibrium state is unrelated with external temperature environment.So-called balance, it is simply that temperature no longer changes, namely from there on, the heat absorption that quasiconductor is whole section is always equal to heat release, the Joule heat power that namely resistance R consumes, and always equal to the thermal power of semiconductor absorber, both are that balance is equal all the time, cancel out each other.

If initial stage Joule heat power is more than Endothermic power, arriving quasiconductor in equilibrium process can heat up, under equilibrium condition, it is achieved the conductor temperature of superconducting state can more than initial ambient temperature；If initial stage Joule heat power is less than Endothermic power, arriving quasiconductor in equilibrium process can lower the temperature, and the temperature under equilibrium condition can less than initial ambient temperature.

As shown in Figures 5 to 7, electric-insulation heat-conduction layer 4 is set between insulated thermal insulating layer 2 and quasiconductor 1.The purpose of electric-insulation heat-conduction layer 4 is in that the caloric value of 1 two end faces of quasiconductor to carry, it is distributed to whole quasiconductor 1 surface quickly and evenly, suppress intensification or the cooling of end, make the uniformity of temperature profile of whole quasiconductor 1, and be maintained at a new equilibrium state position.

Without electric-insulation heat-conduction layer 4, the temperature increment of end and decrement can be piled up, when only insulated thermal insulating layer 2 possesses the complete thermal insulating capability of 100%, it is only possible to and continues to maintain virtual superconducting state, and 100% heat insulation can not realize, always there is certain heat exchange with external environment condition, virtual superconducting state can be destroyed, or low-resistance characteristic can be deteriorated.

Electric-insulation heat-conduction layer 4 must possess higher thermal conductivity, it is necessary to is the electrically insulating material that resistivity is very big.Electric-insulation heat-conduction layer 4 can more than one, more than one layer, it is possible to be multiple mixing, it is possible to be multiple structure.Electric-insulation heat-conduction layer 4 can be solid, it is also possible to be liquid, colloid or gas.If liquid or gas, it is possible to it is that static state is in a certain settling position, it is also possible to by the cooperation of respective pump and pipeline, dynamically flow.

Whole or same all sections be divided into after multistage of quasiconductor 1 or segment section, implementing intentional non-uniform doping along macroscopic view positive current direction vector is that the semiconductor doping that impurity concentration dullness increases continuously or dullness is continuously reduced processes.P-type semiconductor is implemented to pass through along macroscopic view positive current direction vector to be incremented by doping continuously according to the concentration from P-to P+ is dull；N-type semiconductor is implemented concentration dullness from N+ to N-along macroscopic view positive current direction vector and is successively decreased continuously doping；Comprise P type and the quasiconductor of N-type two attribute simultaneously, implement the individually doping continuously of transition change from N to P along macroscopic view positive current direction vector.After implementing to be divided into multistage in whole quasiconductor of dull consecutive variations doping or one, in two ends of each section respectively whole or this section, semiconductor properties is the strongest or the most weak position.

Quasiconductor 1 is configured to independent one, and both sides are connected with external circuit, and quasiconductor 1 is configured to more quasiconductors and is connected in series, and outermost semiconductor end is each connected with external circuit.

The quasiconductor of independent one, both can be whole and implement monotone variation doping along the sense of current, it is possible to after being divided into multistage, all sections or segment section had independently carried out monotone variation doping.It is no matter whole or each correspondent section independently implements monotone variation doping, since it is considered that Process of absorption or liberation of heat occur position and size need be uniformly distributed as far as possible, the doping content at each monotone variation doped segment two ends is controlled unanimously as far as possible, and length also controls consistent as far as possible.In general, the error of the average doping concentration of the doping content at the two ends of any one section each end corresponding to all sections, ± 50% is not exceeded with the ratio of this average doping concentration, this ratio is more big, mean that the semiconductor properties distribution of each section is more uneven, the distribution of Process of absorption or liberation of heat amount is also more uneven, is more unfavorable for maintaining the performance level of virtual superconductor.

It it is not only doping situation of change, also include the length of quasiconductor, also should try one's best uniformly equal, otherwise will also result in Process of absorption or liberation of heat and the unbalanced of position occurs, concentration is compared in such as some local heat release, concentration is compared again in some local heat absorption, is unfavorable for that even heat is distributed, eventually affects the performance of virtual superconductor.Therefore, in general, the length of any one non-uniform doping Semiconductor segment, it should identical with the average length of all the type non-uniform doping sections, its error in length is usually no more than ± 50%, and it is uneven that excessive error means that heat is distributed.

Certainly, quasiconductor 1 can also be configured to many, the many parallel stackings of quasiconductor 1, or side by side, or mutually reverse parallel configuration, or a portion quasiconductor 1 head and the tail arranged in series, the parallel stacking parallel configuration of other parts quasiconductor 1.Isolate with insulating heat-conduction material between the quasiconductor of relation parallel with one another, it is ensured that the parallel relationship of electric insulation.

The series connection of many quasiconductors 1 can also be carried out simultaneously, and in parallel while many quasiconductors 1.

For having a more than quasiconductor side by side being perpendicular to the sense of current, the situation of such as close to each other or stacking or torsion, in order to promote being uniformly distributed of Process of absorption or liberation of heat further in some example, also the position relationship of each quasiconductor monotone variation doped segment side by side of the direction is adjusted.A kind of mode is to there being M quasiconductor side by side, take wherein half or the quasiconductor close to half quantity, the node location alignment that its doping content short distance is undergone mutation, and by aligned for the medium position of the doping content dullness transition change section of the quasiconductor of second half quantity of residue.The node of the former doping content sudden change is main heat release, and latter position is heat absorption, and two combine just complementary, comparatively facilitate the equilibrium of Process of absorption or liberation of heat.Another way is the position relationship far and near according to the mutual distance of the individual quasiconductor side by side of M, from the near to the remote gradually by the position of respective doping content cusp node, stagger with impartial length, the cusp node of the hithermost quasiconductor of each two, spacing distance at the sense of current is equal or approximately equal, and is equally beneficial for the equilibrium of Process of absorption or liberation of heat.

Quasiconductor 1 material is hard, or is soft, and quasiconductor 1 current cross-section is circular or rectangle, and quasiconductor 1 outward appearance is film like.

Inside virtual superconductor after thermal stabilization shield, the electric current I of certain level correspondence can cause the resistance Joule heat of respective horizontal to discharge, and the heat absorption generating conversion of respective horizontal.Under final stability, the quasiconductor within virtual superconductor can maintain some corresponding temperature levels Ts.This temperature levels is more big with the difference of external environment condition, the thermal resistance burden of thermal insulation layer is more heavy, thermal isolation effect is more poor, therefore it is desirable that when the most frequently used electric current I0, the actual temperature Ts of virtual superconductor internal semiconductor can as closely as possible equal to ambient temperature Te.

The rate of change size of doping content in adjustment quasiconductor unit length, or adjust the dopant concentration level of original position, or adjust the average doping concentration of whole quasiconductor, the adjustment to final equilibrium temperature can be realized.Therefore, the important evidence that we are adjusted is, according to the situation of actual current size in whole work process, calculate the arithmetic mean of instantaneous value of levels of current in each time, or root-mean-square value, or adopt other arbitrary optimized choice method according to practical situation, obtain a required I0 levels of current.Virtual superconductor is when this I0, after reaching stable equilibrium state, and the actual temperature Ts ≈ ambient temperature Te of internal semiconductor.

In general, the scope control of Δ T=Ts-Te is relatively good within ± 30 DEG C, more big Δ T value means that effect of heat insulation is more poor, the excessive temperature difference will cause excessive power attenuation or the impact of external heat power, thus causing that the resistivity of virtual superconductor becomes big or becomes bigger negative value, all it is unfavorable for maintaining stablizing of virtual superconductor characteristic.

The foregoing is only the preferred embodiments of the present invention, not the restriction to this case design, all equivalent variations done according to the design key of this case, each fall within the protection domain of this case.

Claims (11)

1. a resistivity is approximately the virtual superconductor of zero, it is characterised in that: include quasiconductor, insulated thermal insulating layer and external connecting leads；Intentional non-uniform doping implemented by quasiconductor along macroscopic electrical current direction, forms uneven semiconductor properties distribution；Semiconductor end connects external connecting leads respectively as the leading-in end of electric current and exit；Insulated thermal insulating layer cladding on the semiconductor and is coated on quasiconductor and external connecting leads junction, and quasiconductor is formed with external environment condition and is thermally isolated.

2. a kind of resistivity as claimed in claim 1 is approximately the virtual superconductor of zero, it is characterised in that: electric-insulation heat-conduction layer is set between insulated thermal insulating layer and quasiconductor；When quasiconductor is set to multiple, electric-insulation heat-conduction layer is set between adjacent quasiconductor.

3. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterised in that: the semiconductor properties of external connecting leads is identical with connected semiconductor end semiconductor properties.

4. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterized in that: implement whole quasiconductor of non-uniform doping or same all sections be divided into after multistage or segment section quasiconductor, implement along same macroscopic electrical current direction that impurity concentration is dull to be increased or the intentional non-uniform doping of quasiconductor that dullness is continuously reduced processes continuously；This whole or this section of quasiconductor after doping treatment, pass through along macroscopic electrical current vector positive direction and possess from P-to P+, or from N+ to N-, or the feature of the impurity concentration dullness continuous transition change from N to P, the semiconductor properties degree of strength at two ends or attribute type possess difference.

5. a kind of resistivity as claimed in claim 4 is approximately the virtual superconductor of zero, it is characterized in that: the sense of current series connection 2 non-uniform dopings quasiconductor time, the doping content at the quasiconductor two ends of any one whole monotone variation doping, with the error of the opposite ends average doping concentration of series connection direction all same whole monotone variation doped semiconductors, with ratio ± 50% of this end average doping concentration；The doping content at any one Semiconductor segment two ends of monotone variation doping implemented by a piece quasiconductor after being divided into multistage, the error of the same average doping concentration that are divided into the Semiconductor segment opposite ends of multistage after implementing monotone variation doping all with series connection direction, with ratio ± 50% of this end average doping concentration.

6. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterized in that: semiconductor arrangement is independent one, both sides are connected with external circuit, or are configured to more than two be mutually connected in series from beginning to end, and two quasiconductors of outermost are connected with external circuit respectively；It is configured to independent one and independently carry out monotone variation doping after being divided into multistageTime, ratio ± 50% of any one section of length implementing monotone variation doped segment and the average length of all monotone variation doped segment；When quasiconductor arranged in series is more than two, wherein ratio ± 50% of the average length of the Semiconductor segment of the length non-uniform doping same with all enforcements of the Semiconductor segment of certain enforcement non-uniform doping any.

7. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterized in that: semiconductor arrangement is parallel with one another more than two, two folded with semiconductor-on-insulator parallel layers or draw close side by side, or mutually reverse, separated by insulating heat-conduction material each other and remain electrically isolated from.

8. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterised in that: the sense of current configures more than two serial semiconductor, is being perpendicular to the sense of current two more parallel quasiconductors of configuration simultaneously.

9. a kind of resistivity as claimed in claim 8 is approximately the virtual superconductor of zero, it is characterized in that: be perpendicular to M the quasiconductor that macroscopic electrical current direction is mutually close side by side, M is > positive integer of 1, take the middle part of former and later two maximum dopant concentration drop nodes being wherein in other quasiconductor closest to the node location that the doping content drop of integer amount the quasiconductor of M/2 is maximum, site error ± 20%；Or M quasiconductor is according to the far and near order of neighbor distance, the maximum node location of respective doping content drop is equally spaced to one another and staggers, site error ± 30%.

10. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterized in that: semiconductor material is hard, or being soft, each quasiconductor current cross-section is circular or rectangle, and each quasiconductor outward appearance is film like or filament shape.

11. a kind of resistivity as claimed in claim 1 or 2 is approximately the virtual superconductor of zero, it is characterized in that: in the course of the work, arithmetic mean of instantaneous value according to the real work electric current I of each time period, or root-mean-square value, determine levels of current I0, under this I0 levels of current, the horizontal Ts of quasiconductor actual temperature after virtual superconductor internal temperature balance and stability, with gap ± 30 DEG C of ambient temperature Te.