CN105742496A - Chip capable of realizing continuously-changeable nano gap by dual-material micro cantilever and preparation method for chip - Google Patents
Chip capable of realizing continuously-changeable nano gap by dual-material micro cantilever and preparation method for chip Download PDFInfo
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- CN105742496A CN105742496A CN201610203656.2A CN201610203656A CN105742496A CN 105742496 A CN105742496 A CN 105742496A CN 201610203656 A CN201610203656 A CN 201610203656A CN 105742496 A CN105742496 A CN 105742496A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/671—Organic radiation-sensitive molecular electronic devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Abstract
The invention discloses a junction-breaking chip capable of realizing continuous change of electrode spacing through temperature control based on a characteristic that a dual-material micro cantilever is deflected when the micro cantilever is heated. The invention belongs to a novel temperature-controlled junction-breaking chip which can be applied to the fields of single molecule electronics and sensors. The different materials at the upper and lower layers of the dual-material micro cantilever have different thermal expansion coefficients to temperatures; the free ends of the dual-material sheet are defected due to heat under temperature changes, and the free ends deflect to one side with smaller deformation; and the tiny deformation can be utilized to control the spacing between two electrodes so as to realize the single molecular junction construction and to further realize researching on the characteristics of the single molecular junction, so that valuable references for researching on single molecular devices are provided.
Description
Technical field
The present invention relates to a kind of chip constructing consecutive variations nano-gap electrode, be specifically related to the technical field such as molectronics, micro-nano electronics.
Background technology
Develop it is critical only that of molecular device to be connected between electrodes by molecule, in other words, develop nano gap technology, it is thus achieved that nano-electrode is the key technology that molecular device is developed.Up till now, existing many methods can connect individual molecule or atom between nano-electrode, forms nano gap, builds unimolecule knot.Common method has: nano-pore forms method, atomic surface diffusional deposition method, molecular crystal photoetching process, liquid metal electrode method, cross wire builds method, electromigration forms nano gap method, electrochemical deposition method, Mechanical controllable nanorupture connection and scanning electron microscopy etc..These methods are can integration packaging, Connexin change or have restriction very greatly in repeating reversibility etc..
Summary of the invention
Present invention aim to address integration packaging of the prior art, continuously, the problem that repeats the aspect such as reverse, provide one and can realize nano gap continually varying chip, the characteristic utilizing bi-material layers micro-cantilever expanded by heating to bend, manufactures the chip in a kind of high accuracy, continuous reversible change nano-electrode gap.
In order to solve the problem in technical background, the present invention proposes and utilizes electromagnetic radiation to change temperature field, and the change of temperature makes bi-material layers micro-cantilever bend, and then increases or reduce the nano gap between two electrodes.This chip drives without additional motor, and can be designed as the form of array, can have bigger advantage on integration packaging；It addition, bi-material layers is continually varying with temperature expansion bending, so the size of nano gap is also as temperature continually varying, on Connexin changes, also there is certain advantage；Nano gap variation with temperature forward increases or reversely reduces, and this forward backward process is repeatably, therefore this chip is repeatable utilization, provides certain advantage for its industrial market.
The technical solution used in the present invention is:
A kind of chip utilizing bi-material layers micro-cantilever to realize consecutive variations nano gap, this chip includes silicon dioxide substrate 1, insulating barrier 5, left side gold thin film layer 3, right side gold thin film layer 8, silicon nitride film layer 6 and nano gap 10 successively；Described silicon dioxide substrate 1, for as substrate and sacrifice layer, being formed on various thin film, be finally etched formation sunk structure；Described left side gold thin film layer 3 and right side gold thin film layer 8 lay respectively in the silicon dioxide substrate 1 of left side and on right side silicon nitride film layer 6, are respectively used to take on the electrode of both sides；Described insulating barrier 5 is positioned in the silicon dioxide substrate 1 of right side and under silicon nitride film layer (6), for isolating the electrode of both sides, and makes formation nano gap 10 between the electrode of both sides；Described silicon nitride film layer 6 is positioned on side insulation right layer 5, forms right side bi-material layers micro-cantilever electrode with right side gold thin film layer 8, and response temperature causes nano gap 10 size variation；Described nano gap 10, is used for constructing molecule knot.
Described silicon nitride film layer 6 forms bi-material layers micro-cantilever electrode with right side gold thin film layer 8, can deform upon with temperature, and wherein, the thermal coefficient of expansion of silicon nitride is 2.3*10-6, the thermal coefficient of expansion of gold is 14.2*10-6Visible, the thermal coefficient of expansion of gold is more than the thermal coefficient of expansion of silicon nitride, when electromagnetic radiation causes variations in temperature, the material degrees of expansion that thermal coefficient of expansion is big is big, therefore micro-cantilever can bend to silicon nitride film layer 6 one side that thermal coefficient of expansion is little, make two interelectrode nano gaps that small consecutive variations occur, this change is reversible, it is possible to reduce nano gap by raising temperature, it is also possible to increase nano gap by reducing temperature.
The preparation method of chip of the present invention, comprises the steps:
1st, in the silicon dioxide substrate 1 of 80-100 micron thickness, a layer photoetching glue 2 it is coated with；
2nd, form etching window figure through ultraviolet photoetching development, then by plasma etching method etching, etch the etching window relative to substrate half at silicon dioxide substrate 1 upper left side；
3rd, it is deposited with the left side gold thin film layer 3 in the silicon dioxide substrate 1 of left side and the gold thin film layer 4 on right side photoresist 2 with electron beam evaporation plating instrument simultaneously；
4th, throwing off photoresist 2, gold thin film layer 4 thereon can be broken away jointly；
5th, form thickness by ald and be equivalent to the aluminum oxide film insulating barrier 5 of an atomic size；
6th, on insulating barrier 5, a layer photoetching glue 2 it is coated with；
7th, the method etching photoresist 2 inscribed with electron beam, forms the electrode shape that narrow one end, one end is wide；
8th, method cvd nitride silicon membrane layer 6 and the silicon nitride film layer 7 simultaneously of low-pressure vapor phase chemical deposition or plasma-reinforced chemical deposition are used；
9th, it is deposited with right side gold thin film layer 8 and gold thin film layer 9 with electron beam evaporation plating instrument simultaneously；
10th, throwing off photoresist 2, gold thin film layer 9 thereon and silicon nitride film layer 7 can be broken away jointly, and remaining right side gold thin film layer 8 and silicon nitride film layer 6 form the electrode of bi-material layers；
11st, buffered oxide etch method etching insulating layer 5, uses H3PO4Buffer etching oxidation aluminum thin film, forms nano gap 10；
12nd, buffered oxide etch method etching silicon dioxide substrate 1, etches substrate with HF buffer solution, makes to present at the bottom of electrode the state of hollow out, forms micro-cantilever.
Described nano gap 10 is not produced by electron beam lithography electrode shape, but produced by etching insulating layer 5, ald forms thickness and is equivalent to the aluminum oxide film insulating barrier 5 of an atomic size, is etched, leaves the nano gap 10 of atomic size in subsequent step.
When electromagnetic radiation intensity increases, bi-material layers micro-cantilever temperature raises, silicon nitride film layer 6 and right side gold thin film layer 8 all can expanded by heating, the material degrees of expansion that thermal coefficient of expansion is big is big, therefore micro-cantilever can bend to silicon nitride film layer 6 one side that thermal coefficient of expansion is little, its offset delta meets:
Wherein Δ T is the variable quantity of temperature, n=t2/t1, K=4+6n+4n2+φn3+(φn)-1, φ=E2/E1, t1For silicon nitride film layer 6 thickness, t2For the thickness of right side gold thin film layer 8, E1For the elastic modelling quantity of silicon nitride, E2For the elastic modelling quantity of gold, α1For the thermal coefficient of expansion of silicon nitride, α2For the coefficient of expansion of gold, L is the length of micro-cantilever.
The chip utilizing bi-material layers micro-cantilever to realize consecutive variations nano gap provided by the invention can as the experiment porch of molecular characterization test, when chip is in different state of temperatures, the degree of crook of bi-material layers micro-cantilever is different, nano gap 10 varies in size, and then makes molecule knot present different electrology characteristics.The size of nano gap 10 determines the number of coupled molecule, electrology characteristic also can be different, and described bi-material layers micro-cantilever can be designed as array format, can be used for the imaging system of temperature field or light field, the strong and weak signals of radiation is converted into electrical signal, it is simple to computer recording and analyzing and processing.
Advantage of the present invention and beneficial effect:
(1) present invention is that temperature affects the deformation of bi-material layers to construct nano gap, it is not necessary to additional driving device, and such as motor etc., overcoming device volume greatly cannot integration packaging or the low problem of integrated level.
(2) present invention is that temperature affects the deformation of bi-material layers to construct nano gap, and owing to temperature is continually varying, deformation is as well as temperature consecutive variations, and overcoming nano gap can not continually varying problem.
(3) present invention is that temperature affects the deformation of bi-material layers to construct nano gap, and owing to the deformation of bi-material layers is reversible, gap can increase and can also reduce, and overcomes nano gap and changes irreversible problem.
Accompanying drawing explanation
Fig. 1 to Figure 13 is the center section plan in chip fabrication processes；In figure, numeral 1 is silicon dioxide, and 2 is photoresist, and 3,4,8 and 9 is gold thin film layer, and 5 is insulating barrier, and 6 and 7 is silicon nitride layer, and 10 is nano gap.
Fig. 1 is silicon dioxide substrate 1 schematic diagram.
Fig. 2 is on Fig. 1 basis, is coated with photoresist 2.
Fig. 3 is on Fig. 2 basis, and with Ultraviolet lithography, the photoresist of half is etched, and half is retained.
Fig. 4 is on Fig. 3 basis, gold coated films layer 3 and 4.
Fig. 5 is on Fig. 4 basis, throws off photoresist 2, remaining side (left side) gold thin film layer 3.
Fig. 6 is on Fig. 5 basis, plates insulating barrier Al2O3。
Fig. 7 is on Fig. 6 basis, is coated with photoresist 2.
Fig. 8 is on Fig. 7 basis, and the method inscribed with electron beam inscribes electrode shape, and shape is as shown in figure 14.
Fig. 9 is on Fig. 8 basis, plates silicon nitride film 6 and 7.
Figure 10 is on Fig. 9 basis, gold coated films layer 8 and 9.
Figure 11 is on Figure 10 basis, throws off photoresist, is left side (right side) gold thin film layer 8 and silicon nitride film 6.
Figure 12 is on Figure 11 basis, etching insulating layer 5, forms nano gap 10 between two electrodes.
Figure 13 is on Figure 12 basis, utilizes buffered oxide etch silicon dioxide substrate 1 to form engraved structure.
Figure 14 is the axonometric chart of chip.
Detailed description of the invention
Embodiment 1, chip making
1st, in the silicon dioxide substrate 1 of 80-100 micron thickness, it is coated with a layer photoetching glue 2 (Fig. 2)；
2nd, form etching window figure through ultraviolet photoetching development, then by plasma etching method etching, silicon dioxide substrate 1 etches the etching window (Fig. 3) relative to substrate half；
3rd, with electron beam evaporation plating instrument gold evaporation thin layer 3 and gold thin film layer 4 (Fig. 4) simultaneously；
4th, throwing off photoresist 2, gold thin film layer 4 thereon can be broken away (Fig. 5) jointly；
5th, form thickness by ald and be equivalent to the aluminum oxide film insulating barrier 5 (Fig. 6) of an atomic size；
6th, on insulating barrier 5, it is coated with a layer photoetching glue 2 (Fig. 7)；
7th, method etching photoresist 2 (Fig. 8) inscribed with electron beam, forms the electrode shape (Figure 14) that narrow one end, one end is wide；
8th, method cvd nitride silicon membrane layer 6 and the silicon nitride film layer 7 (Fig. 9) simultaneously of low-pressure vapor phase chemical deposition or plasma-reinforced chemical deposition are used；
9th, with electron beam evaporation plating instrument gold evaporation thin layer 8 and gold thin film layer 9 (Figure 10) simultaneously；
10th, throwing off photoresist 2, gold thin film layer 9 thereon and silicon nitride film layer 7 can be broken away jointly, and remaining gold thin film layer 8 and silicon nitride film layer 6 form the electrode (Figure 11) of bi-material layers；
11st, buffered oxide etch method etching insulating layer 5, uses H3PO4Buffer etching oxidation aluminum thin film, forms nano gap 10 (Figure 12)；
12nd, buffered oxide etch method etching silicon dioxide substrate 1, etches substrate with HF buffer solution, makes to present at the bottom of electrode the state of hollow out, forms micro-cantilever (Figure 13).
The chip utilizing bi-material layers micro-cantilever to realize consecutive variations nano gap provided by the invention as shown in figure 14, this chip includes, silicon dioxide substrate 1, left hand half in silicon dioxide substrate 1 is left side gold thin film layer 3, the right hand half of silicon dioxide substrate 1 is from bottom to top followed successively by as insulating barrier 5, silicon nitride layer 6 and right side gold thin film layer 8, it it is the sunk structure of etching formation at the middle part of silicon dioxide substrate 1, silicon nitride layer 6 and right side gold thin film layer 8 is made to form bi-material layers micro-cantilever, described left side gold thin film layer 3 and right side gold thin film layer 8, it is respectively used to take on the electrode of both sides, nano gap 10 is formed between the electrode of both sides.
Wherein, displacement bi-material layers micro-cantilever electrode temperature and deformation produced and the corresponding relation of displacement vertical component, it is possible to obtain with analog simulation method.
Concrete, with comsolMultiphysics, model is simulated, the condition of setting is: micro-cantilever size is far smaller than whole chip size, the length preset value arranging micro-cantilever is 100um, width preset value is 5um, gold thin film layer thickness preset value is 0.1um, and silicon nitride film layer thickness preset value is 0.5um, and micro-cantilever fixing end temperature constant is for presetting initial temperature 293.15K.
Analog simulation experiment obtains displacement and the displacement vertical component that deformation produces by changing free end temperature, it is assumed that increasing 5K on default initial temperature basis, the displacement that emulation obtains is 117.98nm, and displacement vertical component is 117.96nm；Increasing 0.1K on default initial temperature basis, the displacement that emulation obtains is 2.3586nm, and displacement vertical component is 2.3583nm.
Obtain the relation of displacement and temperature by regulating temperature, find that displacement vertical component is directly proportional to temperature by analog simulation experiment.The ratio adjusting micro-cantilever length, width and bi-material thickness can change the proportionality coefficient of proportional relation, and then obtains the chip that different accuracy controls
In summary it can be seen, the bi-material layers micro-cantilever that utilizes that the present invention proposes realizes the chip of consecutive variations nano gap, and the displacement that can pass through bi-material layers expanded by heating deformation generation adjusts nano gap size continuously minutely.
Claims (7)
1. one kind utilizes the chip that bi-material layers micro-cantilever realizes consecutive variations nano gap, it is characterized in that, this chip includes silicon dioxide substrate (1), insulating barrier (5), left side gold thin film layer (3), right side gold thin film layer (8), silicon nitride film layer (6) and nano gap (10) successively；Described silicon dioxide substrate (1), for as substrate and sacrifice layer, being formed on various thin film, be finally etched formation sunk structure；Described left side gold thin film layer (3) and right side gold thin film layer (8) lay respectively on left side silicon dioxide substrate (1) and on right side silicon nitride film layer (6), are respectively used to take on the electrode of both sides；Described insulating barrier (5) is positioned on right side silicon dioxide substrate (1) and under silicon nitride film layer (6), for isolating the electrode of both sides, and makes to be formed between the electrode of both sides nano gap (10)；Described silicon nitride film layer (6) is positioned on side insulation right layer (5), forms right side bi-material layers micro-cantilever electrode with right side gold thin film layer (8), and response temperature causes nano gap (10) size variation；Described nano gap (10), is used for constructing molecule knot.
2. the chip utilizing bi-material layers micro-cantilever to realize consecutive variations nano gap according to claim 1, it is characterized in that, described nano gap (10) can minor variations continuously, silicon nitride film layer (6) forms bi-material layers electrode with right side gold thin film layer (8), can deform upon with temperature, wherein, the thermal coefficient of expansion of silicon nitride is 2.3*10-6, the thermal coefficient of expansion of gold is 14.2*10-6Visible, the thermal coefficient of expansion of gold is more than the thermal coefficient of expansion of silicon nitride, during variations in temperature, the material degrees of expansion that thermal coefficient of expansion is big is big, therefore micro-cantilever can bend to silicon nitride film layer (6) side that thermal coefficient of expansion is little, make two electrode nano gaps (10) that small consecutive variations occur, and this change is reversible, it is possible to reduce gap by raising temperature, it is also possible to increase gap by reducing temperature.
3. described in a claim 1, utilize the application of the chip that bi-material layers micro-cantilever realizes consecutive variations nano gap, it is characterized in that, when described chip is in different state of temperatures, the degree of crook of bi-material layers micro-cantilever is different, nano gap (10) varies in size, nano gap (10) can be used for coupling unimolecule, and chip serves as the platform measuring monomolecular electrology characteristic.
4. application according to claim 3, it is characterised in that the size of described nano gap (10) determines the number of coupled molecule, electrology characteristic also can be different, and bi-material layers micro-cantilever is designed as array format, can analysis temperature field or light field character.
5. the preparation method of chip described in a claim 1, it is characterised in that the method comprises the steps:
1st, at the silicon dioxide substrate (1) of 80-100 micron thickness upper coating one layer photoetching glue (2)；
2nd, form etching window figure through ultraviolet photoetching development, then by plasma etching method etching, etch the etching window relative to substrate half at silicon dioxide substrate (1) upper left side；
3rd, it is deposited with left side gold thin film layer (3) on left side silicon dioxide substrate (1) and the gold thin film layer (4) on right side photoresist (2) with electron beam evaporation plating instrument simultaneously；
4th, throwing off photoresist (2), gold thin film layer (4) thereon can be broken away jointly；
5th, form thickness by ald and be equivalent to the aluminum oxide film insulating barrier (5) of an atomic size；
6th, at insulating barrier (5) upper coating one layer photoetching glue (2)；
7th, method etching photoresist (2) inscribed with electron beam, forms the electrode shape that narrow one end, one end is wide；
8th, method cvd nitride silicon membrane layer (6) and the silicon nitride film layer (7) simultaneously of low-pressure vapor phase chemical deposition or plasma-reinforced chemical deposition are used；
9th, it is deposited with right side gold thin film layer (8) and gold thin film layer (9) with electron beam evaporation plating instrument simultaneously；
10th, photoresist (2) is thrown off, gold thin film layer (9) thereon and silicon nitride film layer (7) can be broken away jointly, and remaining right side gold thin film layer (8) and silicon nitride film layer (6) form the electrode of bi-material layers；
11st, buffered oxide etch method etching insulating layer (5), uses H3PO4Buffer etching oxidation aluminum thin film, forms nano gap (10)；
12nd, buffered oxide etch method etching silicon dioxide substrate (1), etches substrate with HF buffer solution, makes to present at the bottom of electrode the state of hollow out, forms micro-cantilever.
6. preparation method according to claim 5, it is characterized in that, described nano gap (10) is not produced by electron beam lithography electrode shape, but produced by etching insulating layer (5), ald forms thickness and is equivalent to the aluminum oxide film insulating barrier (5) of an atomic size, subsequent step is etched, leaves the nano gap (10) of atomic size.
7. preparation method according to claim 5, it is characterised in that described electrode one end is narrow, when adopting buffered oxide etch method etching silicon dioxide substrate (1), the silicon dioxide below narrow electrode can be etched away, and forms unsettled electrode.
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| US7033476B2 (en) * | 2002-12-31 | 2006-04-25 | Ut-Battelle, Llc | Separation and counting of single molecules through nanofluidics, programmable electrophoresis, and nanoelectrode-gated tunneling and dielectric detection |
| CN104071742A (en) * | 2014-06-12 | 2014-10-01 | 南方科技大学 | Single-walled carbon nanotube based double-cantilever-beam infrared detector and forming method thereof |
| WO2015057870A1 (en) * | 2013-10-16 | 2015-04-23 | Quantum Biosystems Inc. | Nano-gap electrode pair and method of manufacturing same |
| TW201544449A (en) * | 2014-05-08 | 2015-12-01 | Univ Osaka | Devices and methods for adjustable nanogap electrodes |
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- 2016-03-31 CN CN201610203656.2A patent/CN105742496A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7033476B2 (en) * | 2002-12-31 | 2006-04-25 | Ut-Battelle, Llc | Separation and counting of single molecules through nanofluidics, programmable electrophoresis, and nanoelectrode-gated tunneling and dielectric detection |
| WO2015057870A1 (en) * | 2013-10-16 | 2015-04-23 | Quantum Biosystems Inc. | Nano-gap electrode pair and method of manufacturing same |
| TW201544449A (en) * | 2014-05-08 | 2015-12-01 | Univ Osaka | Devices and methods for adjustable nanogap electrodes |
| CN104071742A (en) * | 2014-06-12 | 2014-10-01 | 南方科技大学 | Single-walled carbon nanotube based double-cantilever-beam infrared detector and forming method thereof |
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