CN105737773A - Measurement device and method used for measuring layer thickness of stacked wafers and lattice imperfection - Google Patents
Measurement device and method used for measuring layer thickness of stacked wafers and lattice imperfection Download PDFInfo
- Publication number
- CN105737773A CN105737773A CN201610090364.2A CN201610090364A CN105737773A CN 105737773 A CN105737773 A CN 105737773A CN 201610090364 A CN201610090364 A CN 201610090364A CN 105737773 A CN105737773 A CN 105737773A
- Authority
- CN
- China
- Prior art keywords
- wafer
- wafer stacking
- stacking
- measurement apparatus
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
- G01B17/02—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness
- G01B17/025—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness for measuring thickness of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
- G01N29/043—Analysing solids in the interior, e.g. by shear waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
- G01N29/265—Arrangements for orientation or scanning by relative movement of the head and the sensor by moving the sensor relative to a stationary material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
- G01N29/27—Arrangements for orientation or scanning by relative movement of the head and the sensor by moving the material relative to a stationary sensor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
- G01N29/275—Arrangements for orientation or scanning by relative movement of the head and the sensor by moving both the sensor and the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/023—Solids
- G01N2291/0231—Composite or layered materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/02854—Length, thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/0289—Internal structure, e.g. defects, grain size, texture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/044—Internal reflections (echoes), e.g. on walls or defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/26—Scanned objects
- G01N2291/269—Various geometry objects
- G01N2291/2697—Wafer or (micro)electronic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Acoustics & Sound (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The title of the present invention is a measurement device and method used for measuring the layer thickness of stacked wafers and lattice imperfection. The present invention relates to the measurement device and method used for measuring and/or detecting the layer thickness of a or a plurality of layers of the stacked wafers and/or the lattice imperfection at a plurality of measurement positions of the stacked wafers, and a corresponding wafer processing device.
Description
Technical field
The parent application day of this divisional application is on November 12nd, 2010, application number is 201080070098.8, denomination of invention is " for measuring the layer thickness of wafer stacking and the measurement apparatus of lattice defect and method ".The present invention relates to according to claim 1 for measuring in the multiple measurement positions being distributed on wafer stacking and/or the measurement apparatus of the layer thickness of detection one or more layers of wafer stacking and/or lattice defect (Fehlstellen).The invention additionally relates to the wafer processing apparatus for processing wafer stacking according to claim 8 and according to claim 10 for measuring in the multiple measurement positions being distributed on wafer stacking and/or the method for the layer thickness of detection one or more layers of wafer stacking and/or lattice defect.
Background technology
Development in current semiconductor industry enters following degree: bonding chip (WaferBonding) technique increasingly becomes meaningful.Therefore such as in other portable sets of mobile phone and such as game machine, the new function of such as motion sensor and/or orientation sensor causes the demand of micro electronmechanical (MEMS) parts that can detect acceleration and the speed of rotation is increased rapidly.
Another field mushroomed out is as the so-called 3DIC component manufactured.Being understood as the chip system being made up of multiple coating (Lage) (" active coating ") with transistor, wherein said coating contact site by pass through silicon each other connects.These through contact sites are called " silicon through hole (ThroughSiliconVias) " or in the industry referred to as " TSV ".
In order to cost manufactures these TSV as far as possible lowly, and in order to realize other desired advantages, such as little total package dimension, it is necessary to make wafer be thinned to suitable yardstick before or after TSV manufactures or in TSV manufacture process.Correspondingly make a distinction between so-called through hole original process, through hole middle process and through hole last process at present.Thinning in view of wafer shows, the target thickness endeavoured no longer is sufficient to this wafer still reliably to move to next processing step from a processing step because no longer provide the mechanical stability of wafer, especially in currently common 300mm wafer situation.
Therefore wafer is advantageously temporarily installed on carrier, in order to ensure robust manipulation to LED reverse mounting type, and wherein this LED reverse mounting type is generally of < 150 μm but < 100 μm and often < 80 or even < the thickness of 50 μm mostly.After necessary processing step completes, this wafer departs from from this carrier again.Both approaches is called interim bonding and separates (peeling off (debonding)).
In the first processing step, at this to this carrier, this product wafer is bonded on this carrier by the suitable bonding techniques that professional is known.This bonding steps generally so carries out so that this product wafer, the first interarea of building chip structure on it so come directed so that this face contacts with temporary adhesive, and this adhesive phase foundation subsequently and the contacting of this carrier wafer.
But the machinery all carrying out this product wafer in almost all cases in the category of this back-side process is thinning.This especially comprises grinding steps, and in this grinding steps, the defined thickness of this product wafer is removed by grinding.In this connection, it is common to use there is each grinding steps of the granularity of different grinding rate and/or mill or emery wheel.Mostly exist and there is first grinding steps (rough lapping) of higher material removal rates and there is second grinding steps (smooth grinding) of relatively low material removal rate.
The integrity of quality and interim bonding wafer in order to guarantee final chip explicitly with dorsal part processing step, it is necessary to the connection of this temporary adhesion meets specific quality standard.In this connection, there are a lot of requirements to this adhesive material, it is known for professional.This particularly relates to this binding agent can be tolerated in the ability of the specific process conditions being likely to occur during back-side process.What belong to this especially has the compatibility (without gas evolution) of temperature stability and vacuum environment, the binding agent various combination relative to the stability of the such as chemical substance of solvent, bronsted lowry acids and bases bronsted lowry and the compatibility of various mechanical load or electromagnetic wave (such as having the radiation of the light of specific wavelength) and these parameters.Except the requirement to adhesive material, there is also the geometry with this adhesive phase and the relevant a lot of parameters of mechanical integrity.Especially very big meaning is had for carrying out back-side process, this adhesive phase has an explication and repeatably thickness, and not there is lattice defect (English " Voids(space) ").
But, thinning contrary with single wafer, when interim bonding wafer, carrier wafer and adhesive phase are positioned between wafer cover layer and lapping device (emery wheel, mill etc.).Thus the thickness of this carrier wafer and this adhesive phase together affects the uniformity of final thinning product wafer now.
Therefore in a word it can be said that need to accurately control and monitor the thickness evenness of this adhesive phase in a manufacturing process and mostly also have absolute thickness value.For specific situation-be likely to the thickness (being likely to the whole stacking thickness also having interim bonding) being necessary to know carrier wafer according to the control of this grinding technics.But it is necessary in each case in view of thickness evenness and if desired absolute thickness value to ensure the respective quality of adhesive phase.
In view of lattice defect, during possible glossing during grinding technics and later, these lattice defects will cause that this wafer is by inadequately mechanical support, and thus it may happen that the inhomogeneities damaging or at least occurring the wafer thickness endeavoured when thinning of this wafer.This inhomogeneities is caused by the mechanical flexibility of bed course, and described mechanical flexibility produces due to described lattice defect.In other words, this wafer such as bends during grinding/arches upward in lattice defect, and thus carrying out less strong grinding in these positions, this will cause that thinning wafer local thickness increases subsequently.The target thickness of thinning wafer is more little, and this effect will affect more strong, because this wafer becomes more to have pliability along with the decline of thickness.This finally possibly even causes that wafer ruptured in thinning period.This cleavage event is for grinding and/or glossing is big danger, because material block relatively large produced by this is likely to cause the further damage of whole wafer, it is also possible to cause the further damage of emery wheel and/or mill and/or polissoir.Except this problem during grinding and/or polishing, this lattice defect also can result in fault during all the other dorsal part processing steps.Here should be only used as example to enumerate, may result in thinning silicon wafer during the processing step that the gas closed carries out in a vacuum chamber and burst in these positions during such processing step in this lattice defect.Except being positioned at the loss of the chip of described position, this problem also resulting in other, because microgranule produced by this will pollute the equipment that explosion wherein occurs used and the manufacture equipment being likely to pollute other, and perhaps also can cause the quality problems of other handled on said device wafers.
Summary of the invention
Thus the task of the present invention is to optimize quality standard, such as without the uniformity of lattice defect, repeatability and adhesive thickness, and ensure the least possible substandard products when manufacturing or process the wafer stacking of interim bonding.
This task utilizes the feature of claim 1,8 and 10 to be solved.Being advantageously improved of the present invention is explained in the dependent claims.The all combinations being made up of at least two in feature illustrated in description, claim and/or accompanying drawing fall within scope of the invention.The value being positioned at the described limit when codomain also should disclose as ultimate value, it is possible to claims in any combination.
The basic thought of the present invention is on the one hand, identifies the deviation about aforementioned quality standard when processing wafer at time point possible the earliest, in order to just made the possible loss of product wafer be kept as this reason little as much as possible.This especially can so ensure, namely measures/detect layer thickness and/or the lattice defect of each layer of this wafer stacking, and especially in time before grinding this wafer stacking.The geometric parameter of this carrier wafer is particularly importantly monitored at this, because this carrier wafer is for the mechanical support of this product wafer, and during grinding technics between this wafer cover layer and this lapping device, wherein this wafer cover layer can serve as reference plane or the plane of reference.(zeitnahe) means in aforementioned meaning in time, the least possible wafer stacking is had in process chain before described wafer stacking namely between measuring process/detecting step and grinding steps (including this grinding steps) processing in chain of wafer stacking, especially maximum five, preferably up to three, more preferably up to one.At this according to the present invention it can be stated that this measuring process/detecting step is implemented in measurement/detection module (namely metering module) and this grinding steps is implemented with being spatially separating in especially adjacent grinding module.This measuring process/detecting step and this grinding steps according to the present invention in streamline (in-line) carry out.Thus being also likely to be, before preceding wafer grinding completes, namely be also located in this grinding module, the inspection of this wafer stacking is over.Measured wafer stacking is then necessary " wait ", until it can advance.
In particularly advantageous embodiment, interim bonding steps is carried out in time to this measuring process step/detecting step.It is achieved in, when the fault occurred when interim bonding steps, reduces the amount of the material by mistake processed.This is provided the advantage that, it is possible to the quantity of the wafer stacking reduce the quantity of material that must be fed to post processing (" again processing (Rework) "), being especially bonded, this brings advantage economically and in logic.To should be interpreted as in time in this connection, under any circumstance all measure before grinding this wafer.As it was previously stated, this grinding technics is irreversible technique, it may result in catastrophic fault and especially causes that the single wafer that loss is bonded completely is stacking.But advantageously meaning that in time, before given wafer stacking is tested, maximum 10 other wafer stackings are bonded.If this number can drop below 7 or better 5 or 3, then is better.This number relates to technological process, the wafer stacking that all of which is bonded after this interim bonding technology, after this interim bonding steps, be especially fed to the measuring process/detecting step of the present invention.Just this minimizing of described these wafer stackings to waiting this testing sequence in technological process can advantageously realize in configuration by manufacturing environment, and the equipment wherein implementing interim bonding steps is spatially arranged near the measurement device of the present invention as far as possible.This especially can so realize, and namely this measurement device is integrated in interim bonding apparatus.This integrated solution is typically referred in the industry as that streamline is integrated or streamline metering.According to the present invention, this can be combined to realize with by every kind of interim solution that is bonded that prior art is known.According to the present invention, such as it is contemplated that this measurement device be integrated in for thermoplasticity or can UV hardening binding agent interim bonding apparatus in, wherein this equipment generally comprises one or more topper module for applying binding agent and one or more bonding module, wafer to be processed moves, the part of this automatic wafer commanding apparatus especially this equipment by automatic wafer commanding apparatus between described module.According to the binding agent kind used, additionally also can also integrated heating module in systems, this heating module for discharging solvent from this adhesive phase.Advantageously also commonly, the integrated adjustment equipment for being directed at this wafer suitable, professional is known in such a device.
Additionally the basic thought of the present invention also resides in, and detects the Possible waves of the lattice defect in adhesive phase and adhesive phase thickness and this adhesive phase thickness.
Another aspect of the present invention is in that, the value detected can be automatically analyzed as data, automatically to determine process further or remove this wafer from technology chain.
Another central authorities' aspect of the present invention is in that, this subject matter is integrated in the automatic processing equipment for interim keyed cartridges wafer.Analyzing completely as far as possible each product wafer should be able to be realized in this way, and do not reduce the productivity ratio of this process equipment.Detection/measure thus " streamline " namely conduct " streamline metering " carry out.The embodiment of the measurement apparatus according to the present invention and correspondingly specify, this measurement apparatus especially can be applied in wafer processing apparatus in streamline.
The modular of the technical module arranged for technological process or technology chain is defined in this subject matter.Application relevant with lower module in wafer processing apparatus is particularly advantageous:
-coat module, at least in part wafer stacking to be coated especially with binding agent, advantageously temporary adhesive,
-bonding module, for connecting the wafer layer of wafer stacking,
The measurement apparatus according to the present invention in-inspection module,
-manipulation device, especially has one or more robots arm, for each wafer stacking is sent to next module from a module in wafer processing apparatus, and
-optional heater, is used for discharging solvent.
If being especially previously-detected deviation the thinning again of product wafer in this connection, then this product wafer or this wafer stacking can be made to stand to improve (English: " Rework, again processing ") again.This is especially thus representing, this product wafer also will depart from from carrier again, and is likely to again again to implement whole interim be bonded technique.The equipment arranged exclusively for this or streamline module can be used for this disengaging step.Peel-off device is particularly suited for this, described peel-off device be normally used for thin product wafer from this carrier is taken off from.The technological parameter determined for this being used for this peel-off device can be matched with meeting the requirement peeling off not thinning or completely not thinning product wafer if desired.This processing technique again has big meaning in the meaning of cost-effective manufacture.Product wafer or the wafer stacking especially with very high complexity (this can expect for this 3DIC wafer stacking) have considerable value in this stage, because they improve out and away in manufacturing stream.The value of this wafer stacking mostly more than 1000 Euros, part even 10000 Euros.According to the present invention thus conclusive being, before this wafer stacking experience this processing step that processing technique is no longer possible again after which, identify punctually or as early as possible the so-called bust that wafer stacking will be caused to lose completely, and deliver this to processing technique again.Wafer stacking for reducing thickness grinds and under any circumstance can be regarded as following steps in this connection, and this processing technique again is no longer possible after this step, otherwise and will face the danger that product wafer loses completely.
As long as this wafer stacking does not have place of working, mechanical influence ground construct this measurement apparatus, especially with this wafer stacking intervening gaps H, then just can by this measurement apparatus especially contactlessly, SC cautiously measures/detects.When using ultrasound ripple, being undertaken for contacting needed for propagating ultrasound wave by liquor set on this wafer stacking between this wafer stacking with this measurement apparatus, described liquor is applicable to transmission ultrasound wave.In the case according to a kind of preferred implementation it can be stated that be provided with separating medium, especially barrier film between this liquor and this wafer stacking, with this wafer stacking and liquid phase shielding.This separating medium must be adapted for transmission ultrasound wave.Space under this barrier film can preferably be evacuated so that this barrier film as far as possible uniformly and is flatly applied on this wafer stacking.It is not indispensable for using negative pressure, because only ambient pressure is just responsible for barrier film to be close to completely on this wafer stacking 8.If really not so, then the cavity filling air is likely to make measurement result distortion, because air will reflect sound wave at least to a certain extent.
Advantageous embodiment according to the present invention specifies, it is possible to use be simultaneously used for especially with < 10 μm, preferably < 1 μm, more preferably < the layer resolution detection layers thickness of 0.1 μm and this measurement apparatus of lattice defect, especially transmitters and receivers.Additionally, according to present invention contemplates that, multiple transmitter/receiver unit simultaneously, are especially used with being arranged side by side, with can scanning of a surface more quickly accordingly.This layer of resolution refers to reference plane R transversely, namely depth resolution or vertically resolution or Thickness resolution.
The diameter D measuring signal is advantageously located between 1 μm and 100 μm, especially between 5 μm and 50 μm, it is preferable that between 10 μm and 30 μm.When laser beam, above-mentioned diameter D is such as corresponding to the diameter of this laser beam.
Another advantageous embodiment of the present invention specifies, can have less than 5mm by this measurement apparatus, it is preferable that less than 3mm, be more preferably less than 1mm, it is most preferred that in the grid less than the spacing X of 0.5mm or Y, measure adjacent measurement position.Therefore whole wafer stacking is carried out detection face covering, lattice-shaped so that actual can as far as possible seamlessly detect all lattice defects.
This measurement signal in a lateral direction namely be parallel to the width resolution of reference plane R advantageously between 0.1 μm and 50 μm, especially between 1 μm and 30 μm, preferably between 10 μm and 20 μm.Laser beam such as should be measured in the measurement position determined.But it also inaccurately hits this measurement position, but deviation delta X/ Δ Y.Δ X(deltaX) and Δ Y(deltaY) at this corresponding to width resolution.This width resolution is utilized especially to detect the expansion of lattice defect namely width or diameter.This width resolution is more good, is necessary for implementing more many measurements.Thus setting the best as far as possible quickly measuring and detect between all as far as possible lattice defects.The target thickness of wafer or wafer stacking is more thin, and little lattice defect is more dangerous.
Specify according to the preferred embodiment of the present invention, measure/detection is two-stage, particularly by first quickly and rough measure device and optional second, point-device measurement apparatus.The wafer stacking being only classified to potentially dangerous in this first measurement apparatus experiences this second measurement apparatus.These the second measurement apparatus right and wrong are arranged in streamline, thus not disturbing this process flow as far as possible.In this first measurement apparatus, it is classified as the wafer stacking of potentially dangerous thus temporarily, at least dividing out from this technological process by analytic unit.
Figure 9 illustrates and measuring the some grid distance of signal, the relation between diameter D and width resolution.
The method introduced can use on the spot and/or in streamline.It is interpreted as on the spot during technology/physical/chemical processes step and applies the method.Such as enumerate the thinning again of structured wafer or the etching of the marginal area in chemical tank in the case.
It is interpreted as in streamline being placed in the technical module before or after another technical module application the method.First module can be bonding platform in one embodiment of the invention.This module subsequently is then the measurement apparatus for measuring wafer stacking described here in this case in typical embodiment.In this bonding platform, bonding wafer is stacking, and to previous be bonded wafer stacking, advantageously set forth timely for concept previous be bonded wafer stacking as far as possible in time, especially immediately previous be bonded wafer stacking measurement/detection according to aforesaid in this test desk.Streamline thus be distinctive in that on the spot, the method for the present invention is separated in distinctive module, but the system integration of this module to have other process steps process chains in.
Additionally additionally advantageously specify, the measurement apparatus of the present invention equipped with, especially with transmitters and receivers mechanical couplings, preferably fixing interferometer, especially white light interferometer, measure the spacing on surface of position for measuring it at least one.
The aforesaid feature described about measurement apparatus correspondingly applies to the equipment of the present invention and the method for the present invention.nullAccording to the present invention，There is provided a kind of for measuring on multiple measurement positions and/or the method for the layer thickness of one or more layers of the interim wafer stacking combined of detection and/or lattice defect，There is one sequence :-arrange measurement apparatus，For relative to the planar side of described wafer stacking the layer thickness measuring the layer measuring and/or detecting described wafer stacking on position and/or lattice defect，-signal of electromagnetic wave is sent by the transmitter of described measurement apparatus，And the signal reflected by described wafer stacking is received by the receptor of described measurement apparatus，-analyzed by described receptor received signal by analytic unit，Wherein distinguished, by described analytic unit, the signal that at least two transition between the layer by described wafer stacking is reflected，And determine that it arrives each other and/or arrives the distance of reference plane (R)，And wherein can detect described wafer stacking and/or described measurement apparatus is parallel to the movement of described reference plane (R)，And it is thus possible to detect the position of each measurement position along described reference plane (R).
Accompanying drawing explanation
Other advantages of the present invention, feature and details are from the description of preferred embodiment and draw by accompanying drawing.Wherein:
Fig. 1: illustrate the measurement apparatus of the present invention in the first embodiment,
Fig. 2: illustrate the measurement apparatus of the present invention in this second embodiment,
Fig. 3: illustrate the measurement apparatus of the present invention in the third embodiment,
Fig. 4: illustrate the measurement apparatus of the present invention in the 4th embodiment,
Fig. 5: illustrate the possible quality shortcoming of wafer stacking,
Fig. 6 a-6c: illustrate the distinct methods flow process for measuring/detect multiple measurement position according to the present invention,
Fig. 7 a: illustrate the photo utilizing the measurement apparatus of the present invention to pass through the wafer stacking that infrared signal detects,
Fig. 7 b: illustrate according to the present invention chart to the measurement/detection of wafer surface,
Fig. 7 c: illustrate according to the present invention chart to the measurement/detection of wafer surface,
Fig. 8: illustrate the schematic diagram of the equipment for processing wafer stacking according to the present invention,
Fig. 9: illustrate the schematic diagram of detection wafer stacking lattice defect,
Figure 10: illustrate the photo of the wafer stacking that the measurement apparatus utilizing the present invention detected by ultrasonic signal,
Figure 11: illustrate the schematic diagram of the equipment for processing wafer stacking according to the present invention, and
Figure 12: illustrate the measurement apparatus of the present invention in the 5th embodiment.
Detailed description of the invention
Identical in the drawings or act on identical component and represent by identical reference marks.
Depicting the wafer processing apparatus for processing wafer stacking 8 according to the present invention in fig. 8, this wafer stacking is made up of structured wafer 1, articulamentum 2 and wafer 3.This structured wafer 1 transition 15 place between this structured wafer 1 and this articulamentum 2 has the contact site 14 in the surface being incorporated into this structured wafer 1 and the projection 13 prominent from this surface, and it can be made up of metal alloy.This structured wafer 1 can also be configured to structureless, can also be configured to there is structure also as this wafer 3.
Its planar side relative with the surface of this structured wafer 1 of this wafer stacking 8 is fixed on female part 12(in this case chuck (Chuck)) receiving face 16 on.It is fixed by the vacuum rail 17 of this female part 12.
This articulamentum 2 constructs as temporary adhesive, and by this binding agent, this structured wafer 1 is bonded on this wafer 3 temporarily.Another transition 18 is correspondingly situated between this articulamentum 2 and this wafer 3.
This equipment additionally also has measurement apparatus 11, and this measurement apparatus may move along reference plane R relative to this wafer stacking 8.Conclusive is implement relative movement so that it is likewise contemplated that move this wafer stacking 8 particularly by this female part 12 mobile.Conclusive at this, the relative movement between this measurement apparatus 11 and this wafer stacking 8 can be such as detected in the X-Y coordinate strut this reference plane R.
The function of this measurement apparatus 11 is shown with different enforcement in Fig. 1 is to 4.Fig. 5 illustrates the issuable possible problem when connecting wafer.Such as this articulamentum 2 can have uneven layer thickness.Wafer 1,3 is equal thickness everywhere in the ideal case.Fig. 5 illustrates, wafer 1,3 is likely to has uneven thickness distribution.Additionally these wafers are likely to be of lattice defect 4, so-called " Void(space) ".
According to Fig. 1, this measurement apparatus 11 is made up of housing 5, and in this housing, on the downside of it, place is provided with transmitter 9 and receptor 10.They are aligned on the direction of this wafer stacking 8, are especially parallel to this reference plane R.Measure based on: be coupled in the wafer stacking 8 being bonded by the input of 9 ripples of this transmitter, and utilize this receptor 10 to detect between different materials the reflection at each transition 15,18 place.This receptor 10 constructs as the signal sensor of the signal for detecting electromagnetic wave or ultrasound modalities.
What be especially suitable for as signal wave is the electromagnetic wave with suitable wavelength, wherein there is enough transmissions of the adhesive material of wafer 1, the 3 and articulamentum 2 used.For silicon wafer, this can be such as the light in infra-red range or X-radiation.For chip glass, the light in visible range, and be also at the light in UV scope when using suitable glasses applicable.
The signal source of electromagnetic radiation may be particularly provided in this housing 5, is especially integrated in this transmitter 9.Be alternatively to electromagnetic wave, sound wave be suitable for, especially 100KHz to 800MHz, preferred 100MHz to 400MHz ultrasonic range in ripple.
Preferably with having in infra-red range, especially 1050nm to 10 μm, it is preferable that the light source of the electromagnetic radiation of the optical wavelength of 1300nm.The Optical devices of this measurement apparatus so design at this so that electromagnetic ray can be focused and be transmitted on this wafer stacking 8.
As long as this transmitter 9 and this receptor 10 or housing 5 as according to Fig. 2,3 directly contact with this wafer stacking 8 or the liquid 7 that is applied on this wafer stacking 8 with in the embodiment of 4, then just measure/detect by contacting input coupling.Especially carry out this contact input coupling when using ultrasound wave according to the present invention.
Use electromagnetic wave time between generator-acceptor unit and this wafer stacking 8 setting space H.
When shown in Fig. 3 by the ultrasonic measurement of liquid 7, this liquid is applied on this wafer stacking 8 before measuring, and the housing 5 with supersonic generator is immersed in this liquid 7, with in ultrasonic transmission to this wafer stacking 8, and it is capable of measuring by this transmitter 8 and this receptor 10.This transmitter 9 can construct as supersonic generator at this.The applying of this liquid 7 is carried out regularly by this housing 5 itself.This housing 5 has input channel 25, is especially continuously flowed into liquid 7 by this input channel from liquid container.
In addition it further provides in the embodiment according to figure 4, between this liquid 7 and this wafer 8, be provided with barrier film 6, to protect this wafer stacking 8 to exempt from liquid 7.Therefore this barrier film 6 is elastic so that described barrier film can match with the profile on the surface of this wafer stacking 8.The surface of barrier film 6 applies liquid 7.In being through this liquid 7 and being coupled in this wafer stacking 8 through the measurement signal input of 6, this barrier film.Space under this barrier film 6 preferably can evacuation, and be evacuated before carrying out the measurements.Advantageously, the air pressure on the described side of housing 5 is pressed onto barrier film 6 on the surface of wafer 3 evacuation.Thereby guaranteeing that, this barrier film covers the surface of this wafer 3 when being formed without cavity, and thus only passes through solid and/or liquid, carries out signal input coupling typically without gas phase.
In the particularly advantageous flexible program of the embodiment according to Fig. 4, by being formed the liquid container 27 of peviform by the septum wall 26 surrounded, this barrier film 6 is used as liquid memory.In this particular embodiment, so that it is envisaged that according to the present invention, the circulation of Guan Bi is set between this liquid container 27 and this input channel 25.Thus can realize very clean measurement/detection to implement.
In particularly preferred embodiments, it may also be envisaged that, this equipment is handled in view of liquid and is only comprised the liquid container 27 of this peviform, and fully, during measurement process, especially at least abandon the circulation of this liquid.Liquid is carried out to the conveying of this liquid container 27 and if desired especially for making outflow that maintenance work is easily arranged, from this liquid container 17 in this case through the device derived for liquid conveying and liquid suitable, unshowned in the drawings.
Transition 15,18 place and reflect at this receiving face 16 place, with electromagnetic wave or ultrasound wave be form signal analyzed by respectively suitable receptor 10, and allow accurately to infer the material thickness d1 of the wafer 3 or d3 of the d2 of articulamentum 2 and structured wafer 1 when considering ripple spread speed in the different materials of structured wafer 1, articulamentum 2 and wafer 3.Such that it is able to accurately detect thickness and the thickness evenness of the layer of wafer stacking 8 namely this structured wafer 1, this articulamentum 2 and this wafer 3.By parallel or move this measurement apparatus along this reference plane R on whole wafer stacking 8, it is possible to measure that position is spatially-resolved determines layer thickness corresponding.
As it was previously stated, move relative to this transmitter 9 and this receptor 10 to measure/detect wafer stacking 8.This or the combination of probability can be moved by mobile wafer stacking 8 or transmitter-receiver unit or both and realize.It is preferably chosen the layout needing the least possible axle, particularly by being used for along X-axis and Y-axis namely being parallel to this reference plane R to move the head (Verfahreinrichtung) of wafer stacking.This measurement apparatus is preferably rigidly mounted.
Fig. 6 a to 6c illustrates the most important scan method for detecting whole wafer stacking 8, has detected in Fig. 6 a, with wherein meandering shape.Meander shape scans advantageously, it is possible to what very rapidly carry out this detection section travels (Abfahren).But affect record negatively.Scanning according to the line of Fig. 6 b is another scan mode.This scan mode can be realized by linear actuating device, and wherein the possible gap (Spiel) of the translation unit of this linear actuating device, especially reverse gap are minimized.This flexible program is especially especially advantageous in above-mentioned two-stage measuring method, especially in the second measurement apparatus.Another alternative is in that in wafer stacking 8 situation rotated, this housing 5 to be elapsed towards the center of this wafer stacking 8 consistently.Thus draw spiral helicine detection.Aforementioned scan method has in common that, is scanned continuously.Each signal of measuring continuously measuring position is correspondingly converted by analytic unit and is analyzed.Particularly with the measurement apparatus of the integrated present invention of streamline, for scan time of wafer stacking for less than 180 seconds, be preferably less than 100 seconds, be more preferably less than 60 seconds.For the non-streamline parameter measuring device especially arranged except the integrated measurement apparatus of streamline, being particularly useful for checking with changing in detail the measurement apparatus of the wafer stacking especially dividing out with high resolution, these Check-Out Times are also likely to be significantly greater length of.Fully it is contemplated that this measurement process lasts longer than 10 minutes, also it is longer than 20 minutes or 30 minutes under many circumstances.
If lattice defect 4 is arranged in this adhesive phase 2(Fig. 7 a) now, then inputted the ripple of coupling in described lattice defect 4 or according to continuing to guide or can only continue to guide with different spread speeds.When acoustic wave, its propagation in lattice defect 4 is almost completely prevented, enabling be readily apparent that by echo to infer lattice defect 4(Figure 10).
When electromagnetic wave and especially infrared ray, this measurement device detects different transition or cross section 15,16,18 by interfering, and it is possible to infer layer thickness d1, d2, d3.Indirectly via the determination being carried out layer thickness d1, d2, d3 by the interference detection peak value at transition 15,16,18 place.Difference according to these peak values can calculate the thickness of the equivalent layer by transition 15,16,18 restriction.This analytic unit automatically carries out this calculating.It should be noted herein that measured layer thickness is relevant linearly with the refractive index of layer.This is thus referring to, and electromagnetic wave difference in different materials is propagated soon, and the signal propagation time of across-layer affects the position/spacing of the peak value detected by receptor linearly.In a preferred embodiment, when without corresponding correction, it is that the layer thickness measured by a layer is revealed as refractive index (n) times for the layer with high index (n).
It is such as d2*n for the layer thickness having in adhesive area measured by the adhesive phase of thickness d 2, and measured layer thickness will be d2*1 in the region being arranged in the possible space of adhesive phase.This is based on the fact that following, and air and vacuum have the refractive index being approximately 1.The method that the refractive index (n) of different materials can utilize professional known is determined.Generally these values are also relevant with the electromagnetic signal wavelength used.For the IR light that wavelength is 1300nm, the refractive index ratio of common thermoplastic adhesives as can between 1.2 and 2.5, but mostly between 1.3 and 2, but more typically in scope between 1.4 and 1.9.
In the measurement result of this adhesive phase thickness, aforesaid effect causes that measured layer thickness (thickness (Thickness)) (Fig. 7 b, 7c) declines suddenly in lattice defect region, and this permission infers lattice defect 4 by suitable parser.The X-axis of the pattern/chart of Fig. 7 a to 7c is the corresponding spacing (distance (distance)) to wafer stacking edge, the left side.
Fig. 7 c illustrates the example implementing parser.This analytic unit is so planned so that the monitoring region 21 in this measured zone is monitored by the window that can freely define.If signal enters in this monitoring region 21, then just arrange corresponding action.This should set forth by example.Fig. 7 c illustrates layer thickness d2(thickness (thickness) of articulamentum 2 as the function of the spacing (distance (distance)) along wafer stacking 8).The layer thickness of this articulamentum 2 changes significantly between 37 and 42 μm in an example shown.In this case, this one-tenth-value thickness 1/10 represents the value when nothing is by the correction of refractive index measured by adhesive thickness.That is, in this case, real adhesive thickness will by calculating shown one-tenth-value thickness 1/10 divided by refractive index.In specific embodiment, it is possible to make a distinction between projection, blockage (Dice), lattice defect, shrinkage cavity (Lunkern) etc..They should be characterized by different depth/intensity/deviation of signals.Here should meaning all corresponding algorithms, it can detect the deviation of signal of thickness.These parsers are advantageously yet combined with suitable algorithm, wherein said suitable algorithm such as also together consider this lattice defect by the expansion in face.The expansion by face (Ausdehnung) of lattice defect can be determined by analyzing collected full depth value in X/Y coordinate system according to just described analytical technology.Advantageously can determine unmeasured possible intermediate value by interpolation.
When infrared rays survey or ultrasonic measurement, independently measure with the spacing H of transmitter 9/ receptor 10 with this wafer stacking 8/detect, because calculated the measured value of the thickness realizing each layer according to the reflection at each transition position by difference.
In order to determine each layer to measure thickness distribution on whole wafer, it is necessary to multiple measurement points are received on distribution ground on this wafer.Advantageously this measurement point being arranged in (see figure 10) in suitable coordinate system, this simplifies analysis after a while and data process.It is advantageously used in the coordinate system measuring some detection corresponding with the local coordinate system distributed to the wafer to check.Suitable coordinate system is such as cartesian coordinate system or polar coordinate system.Advantageously, measure point mutually tightly enough to place, in order to typically want intended defect (lattice defect) with appropriate safety detection.Especially it is desirable that detection will cause the defect of the size of aforesaid bust situation in process subsequently.Layer resolution should preferably be better than 10 μm, it is more preferred to is better than 1 μm, it is most preferred that be better than 0.1 μm.
The diameter D of signal is measured advantageously between 1 μm and 100 μm, especially between 5 μm and 50 μm, it is preferable that between 10 μm and 30 μm according to Figure 10.When laser beam, aforesaid diameter D is such as corresponding to the diameter of this laser beam.
Measure signal and in a lateral direction namely be parallel to the width resolution of reference plane R between 0.1 μm and 50 μm, especially between 1 μm and 30 μm, it is preferable that between 10 μm and 20 μm.
Similar with the action in view of lattice defect, also advantageously allow for, when determining and measuring some grid, the wavelength that the typical case of thickness fluctuation occurs.According to aforesaid idea, it was shown that advantageously, arrange one per every about 1 to 3mm and measure point.In order to identify lattice defect more reliably, it may be more desirable to every 0.8mm or every 0.5mm or better every 0.25mm arrange one measure point.For the application especially sensitive, there is very little target wafer thickness, it is also possible to favorably arrange one every 0.1mm and measure point.
This is very frequent so that certain electromagnetic radiation, such as infrared ray can not penetrant structure wafer 1 because this structured wafer or metallization, doping, or protruding.Metallization such as can owing to existing in the surface of wafer or the contact site in the inside of wafer 14.Protruding 13 are made up of metal alloy, and it is opaque similarly for IR.In addition this wafer can be doping.Doping especially almost always occurs in structured wafer situation, and reduces infrared transmitting degree.
By being additional to measurement apparatus 11 or being integrated in the interferometer 19 in this measurement apparatus 11, before this wafer stacking 8 is placed on this female part, it is possible to measure the receiving face 16 of female part 12.The uneven surface that the receiving face of figure 8 illustrates 16 causes due to arch.But the erratic behavior on surface can have every kind of other shape.This utilizes white light interferometer 19 to measure.After measuring pitch profile (Abstandsprofil) by this white light interferometer 19, this wafer stacking 8 is placed on this female part 12.Then pass through this white light interferometer 19 to remeasure so that obtain the second pitch profile, and be the second pitch profile of whole wafer stacking 8.The difference of two pitch profiles is corresponding to the total height of this wafer stacking 8.
Thus in conjunction with aforesaid measurement/detection to transition 15,18, by calculating accordingly and can also determine layer thickness d3 ' according to Fig. 8, its mode is, deducts the layer thickness d1 ' of the wafer 3 and d2 ' of articulamentum 2 from the gross thickness of this wafer stacking 8.
During by infrared ray or ultrasonic scanning process, by using white light interferometer to draw another advantage as scanner.This white light interferometer scanner is moved across the edge of this wafer stacking 8 at this only along a line.If it is positioned at above this wafer stacking 8 at this, then it just continuously measures the spacing on the surface of this wafer stacking 8, if or it cross this wafer stacking 8, then it just measures the spacing in receiving face 16 continuously.If the height change of whole system occurs now during actual infrared ray or ultrasonic scanning, such as due to heat fluctuation, then this white light interferometer scanner is based on height fluctuation and detects this height change, because absolute distance is confirmable.Different from noctovisor scan instrument, wherein this noctovisor scan instrument only measures, by interfering, the peak value drawn due to the interference at interface 15,16 and 18 place.This noctovisor scan instrument is it is thus possible to measure relative spacing namely thickness.This noctovisor scan instrument always needs at least two signal, its difference can calculate the thickness of equivalent layer.This noctovisor scan instrument is thus being insensitive relative to " vibrations " and heat fluctuation.And this white light interferometer scanner measures the spacing of transmitter-receiver unit.If its rate of scanning on whole scanning line is more faster than the height change of whole system, then can serve as the function of time to detect the height change of whole system.
Fig. 7 a illustrates the wafer stacking 8 that measured by the measurement apparatus utilizing the present invention, diameter is 300mm, has wherein found multiple lattice defects 4 with the degree of depth shown in colour.Graphically being carried out the two-dimension analysis to the wafer stacking 8 according to Fig. 7 a by this analytic unit in fig .7b, wherein corresponding with this chart line is drawn in figure 7 a.Can be seen that in fig .7b, this lattice defect 4 in the centre of wafer stacking in section it appear that what kind of.
In another embodiment, by one of measurement apparatus presented hereinbefore marginal area B of this wafer stacking 8 of In situ Measurement during chemical technology.The measuring method of Fig. 6 c is preferably used at this.During chemical substance 22 dissolves the marginal area binding agent 28 of this articulamentum 2, the progress in dissolution process can be measured continuously by this measurement apparatus 11.Preferably the method have been applied to this wafer stacking 8, wherein this wafer stacking 8 is only at edge's bonding structure wafer and carrier wafer.These technology are known for those skilled in the art.
According to another embodiment shown in fig. 12, it is possible to detect in layer by one of aforementioned measuring appliance, the especially lattice defect 4 in mould (Mold) 24, wherein this layer covers electronic component 23, especially blockage.
According to the element that currently preferred doped chemical is the 3rd main group, such as boron, indium, aluminum or gallium, or the element of the 5th main group, such as phosphorus, arsenic or antimony.
List of numerals
1 structured wafer
2 articulamentums
3 wafers
4 lattice defects
5 housings
6 barrier films
7 liquid
8 wafer stackings
9 transmitters
10 receptors
11 measurement apparatus
12 female parts
13 is protruding
14 contact sites
15 transition
16 receive face
17 vacuum rails
18 transition
19 interferometers
20 measure signal
21 monitoring regions
22 chemical substances
23 electronic components
24 layers
25 input channels
26 septum wall
27 liquid containers
28 marginal area binding agents
R reference plane
D1, d1 ' layer thickness
D2, d2 ' layer thickness
D3, d3 ' layer thickness
H spacing
B marginal area.
Claims (3)
1., for a method for the layer thickness of one or more layers of the interim wafer stacking combined of measurement on multiple measurement positions and/or detection and/or lattice defect, there is one sequence:
-arrange measurement apparatus, for relative to the planar side of described wafer stacking measure measurement on position and/or detect the layer thickness of layer and/or the lattice defect of described wafer stacking,
-signal of electromagnetic wave is sent by the transmitter of described measurement apparatus, and the signal reflected by described wafer stacking is received by the receptor of described measurement apparatus,
-analyze by described receptor received signal by analytic unit, wherein distinguished, by described analytic unit, the signal that at least two transition between the layer by described wafer stacking is reflected, and determine that it arrives each other and/or arrives the distance of reference plane (R), and wherein can detect described wafer stacking and/or described measurement apparatus is parallel to the movement of described reference plane (R), and it is thus possible to detection is along the position of each measurement position of described reference plane (R).
2. the method for claim 1, as long as wherein determining the deviation not having quality standard, then especially applies grinding steps with being spatially separating with described measurement apparatus after an analysis.
3. the method for claim 1, wherein processes described wafer stacking again when the deviation of quality standard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610090364.2A CN105737773B (en) | 2010-11-12 | 2010-11-12 | For measuring the thickness degree of wafer stacking and the measuring device and method of lattice defect |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610090364.2A CN105737773B (en) | 2010-11-12 | 2010-11-12 | For measuring the thickness degree of wafer stacking and the measuring device and method of lattice defect |
| CN201080070098.8A CN103221813B (en) | 2010-11-12 | 2010-11-12 | Measuring device and method for measuring layer thicknesses and defects in a wafer stack |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080070098.8A Division CN103221813B (en) | 2010-11-12 | 2010-11-12 | Measuring device and method for measuring layer thicknesses and defects in a wafer stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105737773A true CN105737773A (en) | 2016-07-06 |
| CN105737773B CN105737773B (en) | 2019-04-19 |
Family
ID=56245971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610090364.2A Active CN105737773B (en) | 2010-11-12 | 2010-11-12 | For measuring the thickness degree of wafer stacking and the measuring device and method of lattice defect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105737773B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148569A (en) * | 2019-05-16 | 2019-08-20 | 武汉新芯集成电路制造有限公司 | A kind of defects scanning method and equipment of bonding structure |
| CN110207644A (en) * | 2018-02-28 | 2019-09-06 | 中国航发商用航空发动机有限责任公司 | Rotor disk stacks assembly method and device |
| WO2024112954A1 (en) * | 2022-11-23 | 2024-05-30 | Liminal Insights, Inc. | Intelligent sampling of battery cells for in-depth quality evaluation and analysis |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111402A (en) * | 1984-11-06 | 1986-05-29 | Nippon Kogaku Kk <Nikon> | Position detector |
| CN1365445A (en) * | 2000-03-24 | 2002-08-21 | 奥林巴斯光学工业株式会社 | Apparatus for detecting defect |
| CN1405554A (en) * | 2002-10-30 | 2003-03-26 | 江苏大学 | Method and apparatus for measuring far-ultraviolet laser scratch of interface jointing strength |
| CN1471725A (en) * | 2000-12-04 | 2004-01-28 | 株式会社尼康 | Polishing progress monitoring method and device thereof, polishing device, semiconductor device production method, and semiconductor device |
| US6774989B1 (en) * | 2002-01-16 | 2004-08-10 | Advanced Micro Devices, Inc. | Interlayer dielectric void detection |
| JP2004309295A (en) * | 2003-04-07 | 2004-11-04 | Toshiba Corp | Method and device for measuring height of bump |
| US20050257617A1 (en) * | 2004-05-24 | 2005-11-24 | Busch Ralph E | Method and apparatus for ultrasonic scanning of a fabrication wafer |
| CN1759297A (en) * | 2001-10-26 | 2006-04-12 | 自由度半导体公司 | Method and system for determining layer thickness |
| US20070238805A1 (en) * | 2006-04-06 | 2007-10-11 | Lintec Corporation | Adhesive sheet |
| CN101109628A (en) * | 2006-07-20 | 2008-01-23 | 国际商业机器公司 | Method for measuring thin layers in solid state devices |
-
2010
- 2010-11-12 CN CN201610090364.2A patent/CN105737773B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111402A (en) * | 1984-11-06 | 1986-05-29 | Nippon Kogaku Kk <Nikon> | Position detector |
| CN1365445A (en) * | 2000-03-24 | 2002-08-21 | 奥林巴斯光学工业株式会社 | Apparatus for detecting defect |
| CN1471725A (en) * | 2000-12-04 | 2004-01-28 | 株式会社尼康 | Polishing progress monitoring method and device thereof, polishing device, semiconductor device production method, and semiconductor device |
| CN1759297A (en) * | 2001-10-26 | 2006-04-12 | 自由度半导体公司 | Method and system for determining layer thickness |
| US6774989B1 (en) * | 2002-01-16 | 2004-08-10 | Advanced Micro Devices, Inc. | Interlayer dielectric void detection |
| CN1405554A (en) * | 2002-10-30 | 2003-03-26 | 江苏大学 | Method and apparatus for measuring far-ultraviolet laser scratch of interface jointing strength |
| JP2004309295A (en) * | 2003-04-07 | 2004-11-04 | Toshiba Corp | Method and device for measuring height of bump |
| US20050257617A1 (en) * | 2004-05-24 | 2005-11-24 | Busch Ralph E | Method and apparatus for ultrasonic scanning of a fabrication wafer |
| US20070238805A1 (en) * | 2006-04-06 | 2007-10-11 | Lintec Corporation | Adhesive sheet |
| CN101109628A (en) * | 2006-07-20 | 2008-01-23 | 国际商业机器公司 | Method for measuring thin layers in solid state devices |
Non-Patent Citations (1)
| Title |
|---|
| MORATH，C.J. ET AL: "Ultrasonic multilayer metal film metrology", 《SOLID STATE TECHNOLOGY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110207644A (en) * | 2018-02-28 | 2019-09-06 | 中国航发商用航空发动机有限责任公司 | Rotor disk stacks assembly method and device |
| CN110148569A (en) * | 2019-05-16 | 2019-08-20 | 武汉新芯集成电路制造有限公司 | A kind of defects scanning method and equipment of bonding structure |
| CN110148569B (en) * | 2019-05-16 | 2021-08-24 | 武汉新芯集成电路制造有限公司 | Defect scanning method and device for bonding structure |
| WO2024112954A1 (en) * | 2022-11-23 | 2024-05-30 | Liminal Insights, Inc. | Intelligent sampling of battery cells for in-depth quality evaluation and analysis |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105737773B (en) | 2019-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103221813B (en) | Measuring device and method for measuring layer thicknesses and defects in a wafer stack | |
| KR101313909B1 (en) | Apparatus, device and method for determining alignment errors | |
| JP6874692B2 (en) | Board bonding device and board bonding method | |
| US20140208850A1 (en) | Apparatus and method of detecting a defect of a semiconductor device | |
| US7612895B2 (en) | Apparatus and method for in-situ monitoring of wafer bonding time | |
| TWI657227B (en) | Thickness measurement apparatus | |
| CN105737773A (en) | Measurement device and method used for measuring layer thickness of stacked wafers and lattice imperfection | |
| US10217653B2 (en) | Apparatus for treating substrate | |
| US20150099423A1 (en) | TSV Wafer Thinning Controlling Method and System | |
| JP2015166751A (en) | Measuring device and method for measuring layer thicknesses and defects in wafer stack | |
| KR101589932B1 (en) | Method for inspecting dies on wafer | |
| TW201423882A (en) | Inspection method and inspection fixture for scribing lines of wafer | |
| Matthias et al. | Thin wafer processing-yield enhancement through integrated metrology | |
| US11913772B2 (en) | Non-destructive gap metrology | |
| JP2009177166A (en) | Inspection device | |
| KR20240016197A (en) | Bonding apparatus, bonding method, estimation method, and article manufacturing method | |
| Dudley et al. | Inspection and metrology solutions from TSV through reveal for high volume manufacturing | |
| CN115435752A (en) | Level detection device and level detection method | |
| Allen et al. | Metrology for 3D integration | |
| KR20220027766A (en) | Substrate processing apparatus and substrate processing method | |
| KR20230077688A (en) | Bonding apparatus and bonding method | |
| CN113523588A (en) | Laser processing apparatus | |
| JP2012193968A (en) | Warp checking device and warp checking method | |
| Bair et al. | Advancing Moore’s Law | |
| CN106855395A (en) | A kind of optical detection evaluation method of silicon chip anode linkage technique deformation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |