CN105734513A - 透明导电膜的制备工艺 - Google Patents

透明导电膜的制备工艺 Download PDF

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CN105734513A
CN105734513A CN201610168372.4A CN201610168372A CN105734513A CN 105734513 A CN105734513 A CN 105734513A CN 201610168372 A CN201610168372 A CN 201610168372A CN 105734513 A CN105734513 A CN 105734513A
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陈重贤
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Jiaozuo Song Yang Photoelectric Technology Co., Ltd.
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Suzhou Dongshan Precision Manufacturing Co Ltd
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Abstract

本发明公开了一种透明导电膜的制备工艺，包括如下步骤：提供一PET基材；在所述PET基材的表面涂布一层涂布层；然后利用磁控溅镀设备通过溅镀工艺在所述涂布层上依次溅镀一氧化硅层和一金属化硅层；最后在所述金属化硅层溅镀一层ITO镀层即可得所述透明导电膜；其中，所述磁控溅镀设备上安装有第一硅旋转靶和第二硅旋转靶，所述第一硅旋转靶内工作气体加氩气，反应气体加氧气，用于溅镀氧化硅层；所述第二硅旋转靶内只加氩气，用于溅镀金属化硅层。本发明所述透明导电膜的制备工艺使用可控的不同的反应气体，利用相邻靶位、相同靶材提供过渡结合层，提高了产品稳定性能。

Description

透明导电膜的制备工艺
技术领域
本发明属于光学膜技术领域，具体涉及一种透明导电膜的制备工艺。
背景技术
目前在塑料上镀的ITO膜层一般比较脆，不耐弯折，在ITO膜后加工阶段容易产生细裂纹，造成面电阻不稳定，随着时间过程面电阻变高，触摸屏产品灵敏度下降，甚至于完全不能触摸。
如图1所示：ITO膜透明导电膜的制备工艺一般从下到上依次包括低折射率的塑料PET基材1、高折射率涂布层2、低折射率层3、高折射率ITO溅镀层5这四个光学迭层的组合，来达成高透过率以及其他光学特性，低折射率层可以是涂布层或是溅镀层，因为这层低折射涂布层相对很薄，比较难涂布均匀，所以为了降低成本，目前都是通过溅镀SiOx层来提供低折射率层，一般做法都是在高折射率涂布层上溅镀低折层(例如SiOx)，之后直接再镀ITO镀层。
这样做的缺点在于：ITO镀层比较容易脱落，SiOx镀层也比较容易脆裂。原因是由于没有过渡层，ITO镀层与SiOx镀层的接合力不足，ITO镀层比较容易脱落。而且为了提升光透过率，一般SiOx的氧化程度会订得比较高，造成SiOx镀层的脆性过大，容易脆裂，降低整体ITO膜的耐弯折度
发明内容
本发明的目的在于提供一种透明导电膜的制备工艺，在原有透明导电膜结构的基础上增加一个过渡的、具延展性的金属化硅层，来增加ITO镀层与低折射率层的接合力，从而提升整体透明导电膜的耐弯折性。
为实现上述发明目的，本发明采用了如下技术方案：
一种透明导电膜的制备工艺，其特征在于，所述制备工艺包括如下步骤：
提供一PET基材；
在所述PET基材的表面涂布一层涂布层；
然后利用磁控溅镀设备通过溅镀工艺在所述涂布层上依次溅镀一氧化硅层和一金属化硅层；
最后在所述金属化硅层溅镀一层ITO镀层即可得所述透明导电膜；
其中，所述磁控溅镀设备上安装有第一硅旋转靶和第二硅旋转靶，所述第一硅旋转靶内工作气体加氩气，反应气体加氧气，用于溅镀氧化硅层；所述第二硅旋转靶内只加氩气，用于溅镀金属化硅层。
第一硅旋转靶和第二硅旋转靶位置相邻，并且两个硅旋转靶与ITO旋转靶之间使用高隔离率的隔板，并且在隔板下方设置一个中继隔离腔体用以提高氧气的隔离率，让ITO溅镀腔体的氧化气氛不会受硅溅镀腔体的氧气干扰。
优选的，所述第一硅旋转靶内氩气流量为100～300SCCM，氧气流量为20～60SCCM。
优选的，所述第二硅旋转靶内氩气流量为100～300SCCM。
第一硅旋转靶和第二硅旋转靶在不同的氧化气氛下溅镀，提供硅渐层的氧化程度，可以提高层间结合力。
第二硅旋转靶在缺氧气氛下溅镀金属化硅层，这层金属化硅可以提供比氧化硅更高的弹性与韧性，在弯折状态下更不容易龟裂，可以增加镀层的延展性以及与ITO层的镀层结合力。
优选的，所述氧化硅层的结构为SiOx，x范围为1.5～2.0，其折射率为1.42～1.55，厚度为10nm～30nm。
优选的，所述金属化硅层的折射率为3.77～5.09，其厚度为5nm～10nm。
本发明所述制备工艺在简洁的磁控溅镀设备腔体结构中，使用有限的阴极溅射腔体数量，溅镀低折层、过渡接合层和ITO镀层，而且磁控溅镀过程，各阴极溅射腔体反应气体氧化气氛互不干扰、串气率极低。
有益效果：
本发明所述透明导电膜的制备工艺使用可控的不同的反应气体，利用相邻靶位、相同靶材提供过渡结合层，提高产品稳定性能，在原有透明导电膜结构的基础上增加一个过渡的、具延展性的金属化硅层，在弯折状态下更不容易龟裂；而且ITO镀层与金属化硅层的结合力也高过与氧化程度高的SiOx层的结合力，因此ITO层的耐弯折力也大幅度增加，从而提升了整体透明导电膜的耐弯折性。
附图说明
图1为现有技术透明导电膜的剖面结构示意图；
图2为本发明所述透明导电膜的剖面结构示意图；
图3为本发明所述磁控溅镀设备的结构示意图；
其中，1、基材，2、涂布层，3、氧化硅层、4、金属化硅层，5、ITO镀层，10、磁控溅镀设备，11、第一硅旋转靶，12、第二硅旋转靶，13、隔板，14、ITO平面靶，15、中继隔离腔体，16，氧气接口，17、氩气接口。
具体实施方式
以下实施例对本发明的技术方案作进一步的说明。
实施例1：
如图2和图3所示，
一种透明导电膜的制备工艺包括如下步骤：
提供一PET基材1；
在所述PET基材1的表面涂布一层涂布层2；
然后利用磁控溅镀设备通过溅镀工艺在所述涂布层2上依次溅镀一氧化硅层3和一金属化硅层4；
最后在所述金属化硅层4溅镀一层ITO镀层5即可得所述透明导电膜；
其中，所述磁控溅镀设备10上安装有第一硅旋转靶11和第二硅旋转靶12，所述第一硅旋转靶11内工作气体加氩气，反应气体加氧气，用于溅镀氧化硅层；所述第二硅旋转靶12内只加氩气，用于溅镀金属化硅层4。
第一硅旋转靶11和第二硅旋转靶12位置相邻，并且两个硅旋转靶与ITO平面靶14之间使用高隔离率的隔板13，并且在隔板13下方设置一个中继隔离腔体15用以提高氧气的隔离率，让ITO溅镀腔体的氧化气氛不会受硅溅镀腔体的氧气干扰。
优选的，所述第一硅旋转靶11内氩气流量为100～300SCCM，氧气流量为20～60SCCM。
优选的，所述第二硅旋转靶12内氩气流量为100～300SCCM。
第一硅旋转靶11和第二硅旋转靶12在不同的氧化气氛下溅镀，提供硅渐层的氧化程度，可以提高层间结合力。
第二硅旋转靶12在缺氧气氛下溅镀金属化硅层4，这层金属化硅可以提供比氧化硅更高的弹性与韧性，在弯折状态下更不容易龟裂，可以增加镀层的延展性以及与ITO层的镀层结合力。
优选的，所述氧化硅层3的结构为SiOx，x范围为1.5～2.0，其折射率为1.42～1.55，厚度为10nm～30nm。
优选的，所述金属化硅层4的折射率为3.77～5.09，其厚度为5nm～10nm。
本发明所述制备工艺在简洁的磁控溅镀设备腔体结构中，使用有限的阴极溅射腔体数量，溅镀低折层、过渡接合层和ITO镀层，而且磁控溅镀过程，各阴极溅射腔体反应气体氧化气氛互不干扰、串气率极低。
需要指出的是，以上所述者仅为用以解释本发明之较佳实施例，并非企图据以对本发明作任何形式上之限制，是以，凡有在相同之发明精神下所作有关本发明之任何修饰或变更，皆仍应包括在本发明意图保护之范畴。

Claims (5)

1.一种透明导电膜的制备工艺，其特征在于，所述制备工艺包括如下步骤：
提供一PET基材；
在所述PET基材的表面涂布一层涂布层；
然后利用磁控溅镀设备通过溅镀工艺在所述涂布层上依次溅镀一氧化硅层和一金属化硅层；
最后在所述金属化硅层溅镀一层ITO镀层即可得所述透明导电膜；
其中，所述磁控溅镀设备上安装有第一硅旋转靶和第二硅旋转靶，所述第一硅旋转靶内工作气体加氩气，反应气体加氧气，用于溅镀氧化硅层；所述第二硅旋转靶内只加氩气，用于溅镀金属化硅层。
2.根据权利要求1所述的透明导电膜的制备工艺，其特征在于，所述第一硅旋转靶内氩气流量为100～300SCCM，氧气流量为20～60SCCM。
3.根据权利要求1所述的透明导电膜的制备工艺，其特征在于，所述第二硅旋转靶内氩气流量为100～300SCCM。
4.根据权利要求1所述的透明导电膜的制备工艺，其特征在于，所述氧化硅层的结构为SiOx，x范围为1.5～2.0，其折射率为1.42～1.55，厚度为10nm～30nm。
5.根据权利要求1所述的透明导电膜的制备工艺，其特征在于，所述金属化硅层的折射率为3.77～5.09，其厚度为5nm～10nm。
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