CN105720867A - Brushless DC motor driving system - Google Patents
Brushless DC motor driving system Download PDFInfo
- Publication number
- CN105720867A CN105720867A CN201610230340.2A CN201610230340A CN105720867A CN 105720867 A CN105720867 A CN 105720867A CN 201610230340 A CN201610230340 A CN 201610230340A CN 105720867 A CN105720867 A CN 105720867A
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- Prior art keywords
- semiconductor
- oxide
- metal
- drain electrode
- described metal
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/08—Arrangements for controlling the speed or torque of a single motor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P21/00—Arrangements or methods for the control of electric machines by vector control, e.g. by control of field orientation
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/06—Arrangements for speed regulation of a single motor wherein the motor speed is measured and compared with a given physical value so as to adjust the motor speed
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Ac Motors In General (AREA)
- Inverter Devices (AREA)
Abstract
A brushless DC motor driving system is characterized by comprising a transformer, wherein the transformer is connected with a mains supply and is connected with an AC/DC rectifier, the AC/DC rectifier is connected with a voltage stabilizer, the voltage stabilizer is connected with an inverter, the inverter is connected with a brushless DC motor and is controlled by an inverter control circuit, and the voltage stabilizer is a linear voltage stabilizer. By the brushless DC motor driving system, the input voltage of the inverter can be stabilized, meanwhile, a control strategy of the inverter is completed, the power consumption of the brushless DC motor during the operation process is enabled to be reduced, and the efficiency is improved.
Description
Technical field
The present invention relates to electrical equipment control field, particularly relate to a kind of BLDCM Drive System.
Background technology
Along with the fast development of Microcomputer Controling Technique, successively having succeeded in developing a collection of electronic type soft starting controller, be widely used in the starting process of motor in relevant control engineering field, reduced voltage starter is substituted therewith.The soft start facility of Current electronic formula all uses the regulating circuit of IGCT, described by its circuit is constructed as follows: IGCT six, it is connected serially to after inverse parallel between two on three phase mains, after system sends and starts signal, microcomputer controls starter system and carries out data calculating immediately, makes IGCT conveying trigger signal, the angle of flow making IGCT is controlled, according to given output, regulate output voltage, it is achieved the control of motor.
In reality, in a variety of situations when starting brshless DC motor, first civil power is carried out blood pressure lowering, AC/DC conversion, is then passed through inverter, by the control of the de-electrifying machine of control realization to inverter and driving.
But existing driving control system exists problems with, the input voltage of inverter is not sufficiently stable exists bigger ripple, and this ripple of process through inverter can be exaggerated.This means that the instability of inverter input voltage result in output and there is very big fluctuation, thus causing that motor power consumption in operation process increases, inefficiency, the phenomenon such as be short of power.
Summary of the invention
In order to solve above-mentioned technical problem, the present invention proposes a kind of BLDCM Drive System, and it can stablize the input voltage of inverter, the simultaneously perfect control strategy of inverter, it is ensured that brshless DC motor is lower power consumption in operation process, and efficiency improves.
To achieve these goals, the scheme that the present invention adopts is:
A kind of BLDCM Drive System, including with civil power connection transformer, transformator connects AC/DC commutator, described AC/DC commutator connects manostat, described manostat connects inverter, and described inverter connects brshless DC motor, and described inverter is by inverter control circuit control；Described manostat includes metal-oxide-semiconductor M9、M0、Ma6、M7、M8、Ma1And Mp, described metal-oxide-semiconductor M9、M0、Ma6、M7、M8、Ma1And MpSource electrode meet power vd D, the grounded drain of described metal-oxide-semiconductor, described metal-oxide-semiconductor M9Grid connect metal-oxide-semiconductor M0Grid, described metal-oxide-semiconductor M0Drain electrode meet metal-oxide-semiconductor M1Source electrode, described metal-oxide-semiconductor M1Drain electrode connect metal-oxide-semiconductor M3Drain electrode, described metal-oxide-semiconductor M3Source ground；Described metal-oxide-semiconductor M1Source electrode connect metal-oxide-semiconductor M2Source electrode, described metal-oxide-semiconductor M2Drain electrode connect metal-oxide-semiconductor M4Drain electrode, described metal-oxide-semiconductor M2Grid connect reference voltage VREF, described metal-oxide-semiconductor M4Grid connect metal-oxide-semiconductor M3Grid, described metal-oxide-semiconductor M3Grid connect M3Drain electrode, described metal-oxide-semiconductor M4Source ground, described metal-oxide-semiconductor M4Drain electrode connect metal-oxide-semiconductor M5Grid, described metal-oxide-semiconductor M5Source ground, described metal-oxide-semiconductor M7Drain electrode connect M5Drain electrode, described metal-oxide-semiconductor M7Drain electrode connect M7Grid, described metal-oxide-semiconductor M8Drain electrode connect metal-oxide-semiconductor M6Drain electrode, described metal-oxide-semiconductor M6Grid connect M4Grid, described metal-oxide-semiconductor M6Grid and drain electrode between be connected electric capacity CF, described metal-oxide-semiconductor M6Source ground, metal-oxide-semiconductor Ma4Source electrode meet power vd D, described metal-oxide-semiconductor Ma4Grid connect Ma6Grid, the drain electrode of described metal-oxide-semiconductor Ma4 and grid short circuit, described metal-oxide-semiconductor Ma4Drain electrode connect metal-oxide-semiconductor Ma3Drain electrode, described metal-oxide-semiconductor Ma3Source ground, described metal-oxide-semiconductor Ma1Grid connect M8Drain electrode, described metal-oxide-semiconductor Ma1Drain electrode connect metal-oxide-semiconductor Ma2Drain electrode, described metal-oxide-semiconductor Ma2Drain electrode and grid short circuit, described metal-oxide-semiconductor Ma2Source ground, described metal-oxide-semiconductor MpDrain electrode pass sequentially through R1With R2Ground connection, described metal-oxide-semiconductor M2 passes through electric capacity CMConnect MpDrain electrode, described resistance R1With resistance R2Between node connect M1Grid, described metal-oxide-semiconductor MpDrain electrode connect voltage output end.
Described inverter control circuit includes: mathematical model unit, and described mathematical model unit passes sequentially through coordinate converter, magnetic linkage Automatic Control Unit, and switching signal selects unit to connect inverter；Described magnetic linkage Automatic Control Unit and switching signal select to be connected to zero state module between unit, described coordinate converter passes sequentially through magnetic linkage amplitude Component units and flux regulating device connecting valve signal behavior unit, described mathematical model unit passes through torque controller connecting valve signal behavior unit, and described torque controller connects speed regulator and frequency regulator respectively.
Described speed regulator includes: the speed probe being connected with brshless DC motor, the actual speed that described speed probe gathers and setting speed seek rotating speed difference, described rotating speed difference obtains rotating speed difference speed through peaker, rotating speed difference and rotating speed difference speed obtain torque Tg respectively through fuzzy control unit, connecting Direct Torque Control unit, Direct Torque Control unit connects brshless DC motor.
Described manostat, inverter, inverter control circuit is integrated on same pcb board.
Described manostat is integrated on the first pcb board, and described inverter is integrated on the second pcb board, and described inverter control circuit is integrated on the 3rd pcb board.
Also include brushless direct current motor controller, for setting speed.
The invention has the beneficial effects as follows, manostat adopts linear voltage regulator to be controlled, avoid the upper punch phenomenon of output voltage, can effectively ensure that the stability of output voltage, adopt Strategy of Direct Torque Control that inverter is controlled simultaneously, the adjustment fast and stable making motor is low in energy consumption, and efficiency is high.
Rotational speed regulation process have employed fuzzy control strategy, multiple factors are reduced to two factors and obtain setting torque Tg, simplify analysis process so that whole Control system architecture is simple.
Accompanying drawing explanation
The structured flowchart of Fig. 1 present invention；
Fig. 2 voltage regulator circuit figure；
Fig. 3 inverter control circuit；
Fig. 4 rotating speed adjusts machine circuit.
Detailed description of the invention
In order to be better understood by technical scheme, below in conjunction with accompanying drawing, the invention will be further described.
As shown in Figure 1-2, a kind of BLDCM Drive System, including with civil power connection transformer, transformator connects AC/DC commutator, described AC/DC commutator connects manostat, described manostat connects inverter, and described inverter connects brshless DC motor, and described inverter is by inverter control circuit control；Described manostat includes metal-oxide-semiconductor M9、M0、Ma6、M7、M8、Ma1And Mp, described metal-oxide-semiconductor M9、M0、Ma6、M7、M8、Ma1And MpSource electrode meet power vd D, the grounded drain of described metal-oxide-semiconductor, described metal-oxide-semiconductor M9Grid connect metal-oxide-semiconductor M0Grid, described metal-oxide-semiconductor M0Drain electrode meet metal-oxide-semiconductor M1Source electrode, described metal-oxide-semiconductor M1Drain electrode connect metal-oxide-semiconductor M3Drain electrode, described metal-oxide-semiconductor M3Source ground；Described metal-oxide-semiconductor M1Source electrode connect metal-oxide-semiconductor M2Source electrode, described metal-oxide-semiconductor M2Drain electrode connect metal-oxide-semiconductor M4Drain electrode, described metal-oxide-semiconductor M2Grid connect reference voltage VREF, described metal-oxide-semiconductor M4Grid connect metal-oxide-semiconductor M3Grid, described metal-oxide-semiconductor M3Grid connect M3Drain electrode, described metal-oxide-semiconductor M4Source ground, described metal-oxide-semiconductor M4Drain electrode connect metal-oxide-semiconductor M5Grid, described metal-oxide-semiconductor M5Source ground, described metal-oxide-semiconductor M7Drain electrode connect M5Drain electrode, described metal-oxide-semiconductor M7Drain electrode connect M7Grid, described metal-oxide-semiconductor M8Drain electrode connect metal-oxide-semiconductor M6Drain electrode, described metal-oxide-semiconductor M6Grid connect M4Grid, described metal-oxide-semiconductor M6Grid and drain electrode between be connected electric capacity CF, described metal-oxide-semiconductor M6Source ground, metal-oxide-semiconductor Ma4Source electrode meet power vd D, described metal-oxide-semiconductor Ma4Grid connect Ma6Grid, the drain electrode of described metal-oxide-semiconductor Ma4 and grid short circuit, described metal-oxide-semiconductor Ma4Drain electrode connect metal-oxide-semiconductor Ma3Drain electrode, described metal-oxide-semiconductor Ma3Source ground, described metal-oxide-semiconductor Ma1Grid connect M8Drain electrode, described metal-oxide-semiconductor Ma1Drain electrode connect metal-oxide-semiconductor Ma2Drain electrode, described metal-oxide-semiconductor Ma2Drain electrode and grid short circuit, described metal-oxide-semiconductor Ma2Source ground, described metal-oxide-semiconductor MpDrain electrode pass sequentially through R1With R2Ground connection, described metal-oxide-semiconductor M2 passes through electric capacity CMConnect MpDrain electrode, described resistance R1With resistance R2Between node connect M1Grid, described metal-oxide-semiconductor MpDrain electrode connect voltage output end.I in Fig. 2 is the electric current flowing through metal-oxide-semiconductor M9.
As it is shown on figure 3, described inverter control circuit includes: mathematical model unit, described mathematical model unit passes sequentially through coordinate converter, magnetic linkage Automatic Control Unit, and switching signal selects unit to connect inverter；Described magnetic linkage Automatic Control Unit and switching signal select to be connected to zero state module between unit, described coordinate converter passes sequentially through magnetic linkage amplitude Component units and flux regulating device connecting valve signal behavior unit, described mathematical model unit passes through torque controller connecting valve signal behavior unit, and described torque controller connects speed regulator and frequency regulator respectively.
As shown in Figure 4, described speed regulator includes: the speed probe being connected with brshless DC motor, the actual speed that described speed probe gathers and setting speed seek rotating speed difference, described rotating speed difference obtains rotating speed difference speed through peaker, rotating speed difference and rotating speed difference speed obtain torque Tg respectively through fuzzy control unit, torque Tg connects Direct Torque Control unit, and Direct Torque Control unit connects brshless DC motor.
Described manostat, inverter, inverter control circuit is integrated on same pcb board.All circuit are integrated on a circuit and make whole control structure simple, save space.
Described manostat is integrated on the first pcb board, and described inverter is integrated on the second pcb board, and described inverter control circuit is integrated on the 3rd pcb board.It is the independence sacrificing space to exchange in structure relative to this design, has only to carry out more this pcb board rather than change whole panel when a function plate goes wrong.This design reduces the maintenance cost of motor, save resource.
The specific embodiment of the present invention is described in conjunction with accompanying drawing although above-mentioned; but not limiting the scope of the invention; one of ordinary skill in the art should be understood that; on the basis of technical scheme, those skilled in the art need not pay various amendments or deformation that creative work can make still within protection scope of the present invention.
Claims (6)
1. a BLDCM Drive System, it is characterized in that, including with civil power connection transformer, transformator connects AC/DC commutator, described AC/DC commutator connects manostat, described manostat connects inverter, and described inverter connects brshless DC motor, and described inverter is by inverter control circuit control；Described manostat includes metal-oxide-semiconductor M9、M0、Ma6、M7、M8、Ma1And Mp, described metal-oxide-semiconductor M9、M0、Ma6、M7、M8、Ma1And MpSource electrode meet power vd D, the grounded drain of described metal-oxide-semiconductor, described metal-oxide-semiconductor M9Grid connect metal-oxide-semiconductor M0Grid, described metal-oxide-semiconductor M0Drain electrode meet metal-oxide-semiconductor M1Source electrode, described metal-oxide-semiconductor M1Drain electrode connect metal-oxide-semiconductor M3Drain electrode, described metal-oxide-semiconductor M3Source ground；Described metal-oxide-semiconductor M1Source electrode connect metal-oxide-semiconductor M2Source electrode, described metal-oxide-semiconductor M2Drain electrode connect metal-oxide-semiconductor M4Drain electrode, described metal-oxide-semiconductor M2Grid connect reference voltage VREF, described metal-oxide-semiconductor M4Grid connect metal-oxide-semiconductor M3Grid, described metal-oxide-semiconductor M3Grid connect M3Drain electrode, described metal-oxide-semiconductor M4Source ground, described metal-oxide-semiconductor M4Drain electrode connect metal-oxide-semiconductor M5Grid, described metal-oxide-semiconductor M5Source ground, described metal-oxide-semiconductor M7Drain electrode connect M5Drain electrode, described metal-oxide-semiconductor M7Drain electrode connect M7Grid, described metal-oxide-semiconductor M8Drain electrode connect metal-oxide-semiconductor M6Drain electrode, described metal-oxide-semiconductor M6Grid connect M4Grid, described metal-oxide-semiconductor M6Grid and drain electrode between be connected electric capacity CF, described metal-oxide-semiconductor M6Source ground, metal-oxide-semiconductor Ma4Source electrode meet power vd D, described metal-oxide-semiconductor Ma4Grid connect Ma6Grid, the drain electrode of described metal-oxide-semiconductor Ma4 and grid short circuit, described metal-oxide-semiconductor Ma4Drain electrode connect metal-oxide-semiconductor Ma3Drain electrode, described metal-oxide-semiconductor Ma3Source ground, described metal-oxide-semiconductor Ma1Grid connect M8Drain electrode, described metal-oxide-semiconductor Ma1Drain electrode connect metal-oxide-semiconductor Ma2Drain electrode, described metal-oxide-semiconductor Ma2Drain electrode and grid short circuit, described metal-oxide-semiconductor Ma2Source ground, described metal-oxide-semiconductor MpDrain electrode pass sequentially through R1With R2Ground connection, described metal-oxide-semiconductor M2 passes through electric capacity CMConnect MpDrain electrode, described resistance R1With resistance R2Between node connect M1Grid, described metal-oxide-semiconductor MpDrain electrode connect voltage output end.
2. a kind of BLDCM Drive System as claimed in claim 1, it is characterized in that, described inverter control circuit includes: mathematical model unit, and described mathematical model unit passes sequentially through coordinate converter, magnetic linkage Automatic Control Unit, switching signal selects unit to connect inverter；Described magnetic linkage Automatic Control Unit and switching signal select to be connected to zero state module between unit, described coordinate converter passes sequentially through magnetic linkage amplitude Component units and flux regulating device connecting valve signal behavior unit, described mathematical model unit passes through torque controller connecting valve signal behavior unit, and described torque controller connects speed regulator and frequency regulator respectively.
3. a kind of BLDCM Drive System as claimed in claim 2, it is characterized in that, described speed regulator includes: the speed probe being connected with brshless DC motor, the actual speed that described speed probe gathers and setting speed seek rotating speed difference, described rotating speed difference obtains rotating speed difference speed through peaker, rotating speed difference is connected Direct Torque Control unit with rotating speed difference speed respectively through fuzzy control unit, and Direct Torque Control unit connects brshless DC motor.
4. a kind of BLDCM Drive System as claimed in claim 3, is characterized in that, described manostat, inverter, and inverter control circuit is integrated on same pcb board.
5. a kind of BLDCM Drive System as claimed in claim 3, is characterized in that, described manostat is integrated on the first pcb board, and described inverter is integrated on the second pcb board, and described inverter control circuit is integrated on the 3rd pcb board.
6. a kind of BLDCM Drive System as described in claim 4 or 5, is characterized in that, also includes brushless direct current motor controller, for setting speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610230340.2A CN105720867B (en) | 2016-04-14 | 2016-04-14 | A kind of BLDCM Drive System |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610230340.2A CN105720867B (en) | 2016-04-14 | 2016-04-14 | A kind of BLDCM Drive System |
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| CN105720867A true CN105720867A (en) | 2016-06-29 |
| CN105720867B CN105720867B (en) | 2018-06-29 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1290996A (en) * | 1994-07-25 | 2001-04-11 | 大金工业株式会社 | High efficient motor device and method for controlling motor |
| CN103138558A (en) * | 2011-12-05 | 2013-06-05 | 美固电子(深圳)有限公司 | Alternating current /direct current (AC/DC) dual-purpose compressor speed setting controller |
| JP2013158219A (en) * | 2012-01-31 | 2013-08-15 | Nippon Densan Corp | Motor unit |
| CN104038114A (en) * | 2014-06-09 | 2014-09-10 | 江苏仁源电气有限公司 | Sine-wave voltage driving system of single-winding brushless direct current motor and control method thereof |
-
2016
- 2016-04-14 CN CN201610230340.2A patent/CN105720867B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1290996A (en) * | 1994-07-25 | 2001-04-11 | 大金工业株式会社 | High efficient motor device and method for controlling motor |
| EP1083649B1 (en) * | 1994-07-25 | 2003-12-03 | Daikin Industries, Limited | Motor system capable of obtaining high efficiency and method for controlling a motor |
| CN103138558A (en) * | 2011-12-05 | 2013-06-05 | 美固电子(深圳)有限公司 | Alternating current /direct current (AC/DC) dual-purpose compressor speed setting controller |
| JP2013158219A (en) * | 2012-01-31 | 2013-08-15 | Nippon Densan Corp | Motor unit |
| CN104038114A (en) * | 2014-06-09 | 2014-09-10 | 江苏仁源电气有限公司 | Sine-wave voltage driving system of single-winding brushless direct current motor and control method thereof |
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| Publication number | Publication date |
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| CN105720867B (en) | 2018-06-29 |
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Effective date of registration: 20180301 Address after: Erythrina road Tong Jie Fengze District Quanzhou city Fujian province 362000 No. 30 Sea Club Building 5 floor DEF Applicant after: Fujian Hong Xun Electronics Co., Ltd. Address before: Erythrina road middle gard Quanzhou Fengze District 362000 Building 5 floor of Fujian Province Applicant before: QUANZHOU HONGXUN ELECTRONICS CO., LTD. |
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Address after: 362000 No. 168 Xunfeng Road, Xunmei Industrial Zone, Chengdong Street, Fengze District, Quanzhou City, Fujian Province Patentee after: Fujian Hong Xun Electronics Co., Ltd. Address before: Erythrina road Tong Jie Fengze District Quanzhou city Fujian province 362000 No. 30 Sea Club Building 5 floor DEF Patentee before: Fujian Hong Xun Electronics Co., Ltd. |