CN105720170A - High-color rendering property white light-emitting diode - Google Patents
High-color rendering property white light-emitting diode Download PDFInfo
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- CN105720170A CN105720170A CN201610208979.0A CN201610208979A CN105720170A CN 105720170 A CN105720170 A CN 105720170A CN 201610208979 A CN201610208979 A CN 201610208979A CN 105720170 A CN105720170 A CN 105720170A
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- 238000009877 rendering Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000000843 powder Substances 0.000 claims abstract description 33
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 229920006335 epoxy glue Polymers 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- YNKZDZAIBIBPGW-UHFFFAOYSA-N N.[O-2].[Sr+2] Chemical compound N.[O-2].[Sr+2] YNKZDZAIBIBPGW-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 6
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 239000010431 corundum Substances 0.000 claims description 6
- 229910001940 europium oxide Inorganic materials 0.000 claims description 6
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002223 garnet Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 6
- 239000004570 mortar (masonry) Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- OGPBJKLSAFTDLK-YPZZEJLDSA-N europium-150 Chemical compound [150Eu] OGPBJKLSAFTDLK-YPZZEJLDSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001228 spectrum Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012790 adhesive layer Substances 0.000 abstract description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 239000003570 air Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- -1 rare earth ion Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a high-color rendering property white light-emitting diode and belongs to the field of electronic element preparation. According to the white light-emitting diode, with indium gallium nitride as a blue chip, a stable and available compound in air is adopted as a raw material; a novel silicon-based nitrogen oxide prepared at a relatively low temperature and a room pressure is a red fluorescent material; yttrium aluminum garnet yellow fluorescent powder and epoxy resin are doped and compounded to prepare a resin adhesive layer; and the high-color rendering property white light-emitting diode is obtained after assembly. Due to addition of the novel red fluorescent material, the high-color rendering property white light-emitting diode solves the problems that a traditional red fluorescent material cannot be easily put into actual production since the traditional red fluorescent material is sensitive to environment, unstable in chemical property, strict in preparation condition and the like, compensates the disadvantages that the most widely used white light-emitting diode in the market is poor in color rendering property and high in color temperature due to shortage of a red light component in a spectrum, and is the white light-emitting diode with a wide application prospect.
Description
Technical field
The present invention relates to a kind of high-color rendering white light-emitting diode, belong to electronic component preparation field.
Background technology
The development advanced by leaps and bounds along with semi-conducting material, the appearance of a new generation's light emitting diode, as new type light source, its power consumption is only the 1/10 of ordinary incandescent lamp, and the life-span can extend 100 times, owing to having the advantages such as energy-conservation, long-life, non-maintaining, environmental protection, thus replacing traditional electric filament lamp and fluorescent lamp is trend of the times, especially white-light emitting diode can be widely used for the display application such as domestic lighting, road traffic illumination, automotive lighting, landscape light in city and aviation, harbour, station, stadiums, advertising media because of it, thus wide market.At present, most widely used white light emitting diode is composited by blue chip and yellow fluorescent material on the market, but to be color rendering properties poor, colour temperature high for the shortcoming of this combination, and this is primarily due in spectrum shortage red color light component.
Traditional red light material, such as alkaline earth sulfide, owing to the shortcomings such as sensitivity, unstable chemcial property and the thermal quenchings such as the water existed in air, oxygen and carbon dioxide are big can not be met the needs that white light emitting diode is reliable and stable, and other rare earth ion doped fluorescent materials are owing to the matching degree with light-emitting diode chip for backlight unit is poor, the low liquid of fluorescence conversion efficiency is not suitable for white light emitting diode.
Although nitride red fluorescent material has stem-winding excellent properties, but their preparation condition is very harsh, it is necessary to preparing under High Temperature High Pressure, raw material is not easy to obtain, it is necessary to special sintering equipment etc., is therefore not easy to produce and research.
Summary of the invention
The technical problem that present invention mainly solves: be composited by blue chip and yellow fluorescent material for current most widely used white light emitting diode on the market, but that the shortcoming of this combination is color rendering properties is poor, colour temperature high, this is primarily due in spectrum to lack red color light component, and traditional red fluorescence material is still difficult to put into the defect of actual production due to reasons such as environmentally sensitive, unstable chemcial property, preparation condition harshnesses, it is provided that a kind of high-color rendering white light-emitting diode.The white light-emitting diode of the present invention is using InGaN as blue chip, adopt compound stable in air, that be easy to get as raw material, the novel silicon base nitrogen oxides prepared under lower temperature and normal pressure is red fluorescence material, and doped yttrium aluminum garnet yellow fluorescent powder and the composite resin adhesive layer of making of epoxy resin, namely obtain a kind of high-color rendering white light-emitting diode after assembling.This high-color rendering white light-emitting diode is due to the addition of novel red luminescent material, both the problem that tradition red fluorescence material is still difficult to put into actual production had been solved due to reasons such as environmentally sensitive, unstable chemcial property, preparation condition harshnesses, compensate for again the deficiency that color rendering properties is poor, colour temperature is high that most widely used white light emitting diode causes because of lacking red color light component in spectrum on the market, be a kind of white light emitting diode with broad prospect of application.
In order to solve above-mentioned technical problem, the technical solution adopted in the present invention is:
A kind of high-color rendering white light-emitting diode, epoxy glue layer including the first lead-in wire, the second lead-in wire, blue led chips, copper conductor and doping yellow, red fluorescence powder, it is characterized in that: described blue led chips is mounted on the first lead-in wire and is electrical connected with the first lead-in wire, blue led chips surface and the second wire surface are electrical connected by copper conductor, and the first lead-in wire, the second lead-in wire, blue led chips and copper conductor are covered by the inside of the epoxy glue layer of doping yellow, red fluorescence powder.
Described blue led chips is InGaN chip.
Described doping yellow, the preparation process of the epoxy glue layer of red fluorescence powder be:
(1) pour in corundum mortar after weighing 100～200g strontium carbonate, 200～300g silicon dioxide, 30～40g europium oxide and 150～200g silicon nitride mix homogeneously, add 15～20g barium fluoride powder, it is transferred in silica crucible after grinding 1～2h, puts into tube type resistance furnace and in stove, pass into nitrogen until displacing all of which air with 10mL/min speed；
(2) after having taken a breath, first it is warming up to 900～1000 DEG C of pre-burning 1.0～1.5h with 10 DEG C/min rate program, it is incubated calcining 4～6h to 1300～1500 DEG C again with 5 DEG C/min ramp, after cooling to sintered product with the furnace room temperature after having calcined, take out, obtain silica-based nitrogen strontium oxide red fluorescence thing；
(3) the above-mentioned prepared silica-based nitrogen strontium oxide red fluorescence thing of 200～300g epoxy resin, 10～15g yttrium-aluminium-garnet and 5～10g is weighed, under room temperature, mix and blend 1～2h obtains glue-line base material, by in the injecting hole of the bowl-shape two-layered, formed mould of glue-line base material implantation glass obtained, it is injected into mould by the pressure of 5～10MPa；
(4) after injection molding completes, being put into by mould in the baking oven of 105～110 DEG C and toast, make glue-line base material internal stress fully discharge, forming uniform thickness is 0.5～0.8mm rete, is the epoxy glue layer of doping yellow, red fluorescence powder.
The positive and negative electrode of described blue led chips lays respectively on its two sides, and the back side of blue led chips is mounted on the first lead-in wire by elargol.
The invention has the beneficial effects as follows: the high-color rendering white light-emitting diode that the present invention prepares, red fluorescence material used can produce under low temperature, normal pressure, the expense of Productive statistics is low, can manufacture by rapid, high volume, and the addition due to red fluorescence material so that white light-emitting diode color rendering properties is splendid.
Accompanying drawing explanation
Fig. 1 is the plane graph of the present invention " a kind of high-color rendering white light-emitting diode ".
Wherein, the 1, first lead-in wire；2, the second lead-in wire；3, blue led chips；4, copper conductor；5, the epoxy glue layer of doping yellow, red fluorescence powder.
Detailed description of the invention
A kind of high-color rendering white light-emitting diode, epoxy glue layer including the first lead-in wire, the second lead-in wire, blue led chips, copper conductor and doping yellow, red fluorescence powder, it is characterized in that: described blue led chips is mounted on the first lead-in wire and is electrical connected with the first lead-in wire, blue led chips surface and the second wire surface are electrical connected by copper conductor, and the first lead-in wire, the second lead-in wire, blue led chips and copper conductor are covered by the inside of the epoxy glue layer of doping yellow, red fluorescence powder.
Described blue led chips is InGaN chip.
Described doping yellow, the preparation process of the epoxy glue layer of red fluorescence powder be:
Pour in corundum mortar after weighing 100～200g strontium carbonate, 200～300g silicon dioxide, 30～40g europium oxide and 150～200g silicon nitride mix homogeneously, add 15～20g barium fluoride powder, it is transferred in silica crucible after grinding 1～2h, puts into tube type resistance furnace and in stove, pass into nitrogen until displacing all of which air with 10mL/min speed；After having taken a breath, first it is warming up to 900～1000 DEG C of pre-burning 1.0～1.5h with 10 DEG C/min rate program, then is incubated calcining 4～6h with 5 DEG C/min ramp to 1300～1500 DEG C, after cooling to sintered product with the furnace room temperature after having calcined, take out, obtain silica-based nitrogen strontium oxide red fluorescence thing；Weigh the above-mentioned prepared silica-based nitrogen strontium oxide red fluorescence thing of 200～300g epoxy resin, 10～15g yttrium-aluminium-garnet and 5～10g, under room temperature, mix and blend 1～2h obtains glue-line base material, by in the injecting hole of the bowl-shape two-layered, formed mould of glue-line base material implantation glass obtained, it is injected into mould by the pressure of 5～10MPa；After injection molding completes, being put into by mould in the baking oven of 105～110 DEG C and toast, make glue-line base material internal stress fully discharge, forming uniform thickness is 0.5～0.8mm rete, is the epoxy glue layer of doping yellow, red fluorescence powder.
The positive and negative electrode of described blue led chips lays respectively on its two sides, and the back side of blue led chips is mounted on the first lead-in wire by elargol.
Example 1
A kind of high-color rendering white light-emitting diode, epoxy glue layer including the first lead-in wire, the second lead-in wire, blue led chips, copper conductor and doping yellow, red fluorescence powder, it is characterized in that: described blue led chips is mounted on the first lead-in wire and is electrical connected with the first lead-in wire, blue led chips surface and the second wire surface are electrical connected by copper conductor, and the first lead-in wire, the second lead-in wire, blue led chips and copper conductor are covered by the inside of the epoxy glue layer of doping yellow, red fluorescence powder.
Described blue led chips is InGaN chip.
Described doping yellow, the preparation process of the epoxy glue layer of red fluorescence powder be:
Pour in corundum mortar after weighing 100g strontium carbonate, 200g silicon dioxide, 30g europium oxide and 150g silicon nitride mix homogeneously, add 15g barium fluoride powder, it is transferred in silica crucible after grinding 1h, puts into tube type resistance furnace and in stove, pass into nitrogen until displacing all of which air with 10mL/min speed；After having taken a breath, first it is warming up to 900 DEG C of pre-burning 1.0h with 10 DEG C/min rate program, then with 5 DEG C/min ramp to 1300 DEG C of insulation calcining 4h, after cooling to sintered product with the furnace room temperature after having calcined, takes out, obtain silica-based nitrogen strontium oxide red fluorescence thing；Weigh the above-mentioned prepared silica-based nitrogen strontium oxide red fluorescence thing of 200g epoxy resin, 10g yttrium-aluminium-garnet and 5g, under room temperature, mix and blend 1h obtains glue-line base material, by in the injecting hole of the bowl-shape two-layered, formed mould of glue-line base material implantation glass obtained, it is injected into mould by the pressure of 5MPa；After injection molding completes, being put into by mould in the baking oven of 105 DEG C and toast, make glue-line base material internal stress fully discharge, forming uniform thickness is 0.5mm rete, is the epoxy glue layer of doping yellow, red fluorescence powder.
The positive and negative electrode of described blue led chips lays respectively on its two sides, and the back side of blue led chips is mounted on the first lead-in wire by elargol.
The high-color rendering white light-emitting diode that the present invention prepares, red fluorescence material used can produce under low temperature, normal pressure, and the expense of Productive statistics is low, can manufacture by rapid, high volume, and the addition due to red fluorescence material so that white light-emitting diode has splendid color rendering properties.
Example 2
A kind of high-color rendering white light-emitting diode, epoxy glue layer including the first lead-in wire, the second lead-in wire, blue led chips, copper conductor and doping yellow, red fluorescence powder, it is characterized in that: described blue led chips is mounted on the first lead-in wire and is electrical connected with the first lead-in wire, blue led chips surface and the second wire surface are electrical connected by copper conductor, and the first lead-in wire, the second lead-in wire, blue led chips and copper conductor are covered by the inside of the epoxy glue layer of doping yellow, red fluorescence powder.
Described blue led chips is InGaN chip.
Described doping yellow, the preparation process of the epoxy glue layer of red fluorescence powder be:
Pour in corundum mortar after weighing 150g strontium carbonate, 250g silicon dioxide, 35g europium oxide and 180g silicon nitride mix homogeneously, add 18g barium fluoride powder, it is transferred in silica crucible after grinding 1h, puts into tube type resistance furnace and in stove, pass into nitrogen until displacing all of which air with 10mL/min speed；After having taken a breath, first it is warming up to 950 DEG C of pre-burning 1.3h with 10 DEG C/min rate program, then with 5 DEG C/min ramp to 1400 DEG C of insulation calcining 5h, after cooling to sintered product with the furnace room temperature after having calcined, takes out, obtain silica-based nitrogen strontium oxide red fluorescence thing；Weigh the above-mentioned prepared silica-based nitrogen strontium oxide red fluorescence thing of 250g epoxy resin, 13g yttrium-aluminium-garnet and 8g, under room temperature, mix and blend 1h obtains glue-line base material, by in the injecting hole of the bowl-shape two-layered, formed mould of glue-line base material implantation glass obtained, it is injected into mould by the pressure of 8MPa；After injection molding completes, being put into by mould in the baking oven of 108 DEG C and toast, make glue-line base material internal stress fully discharge, forming uniform thickness is 0.7mm rete, is the epoxy glue layer of doping yellow, red fluorescence powder.
The positive and negative electrode of described blue led chips lays respectively on its two sides, and the back side of blue led chips is mounted on the first lead-in wire by elargol.
The high-color rendering white light-emitting diode that the present invention prepares, red fluorescence material used can produce under low temperature, normal pressure, and the expense of Productive statistics is low, can manufacture by rapid, high volume, and the addition due to red fluorescence material so that white light-emitting diode has splendid color rendering properties.
Example 3
A kind of high-color rendering white light-emitting diode, epoxy glue layer including the first lead-in wire, the second lead-in wire, blue led chips, copper conductor and doping yellow, red fluorescence powder, it is characterized in that: described blue led chips is mounted on the first lead-in wire and is electrical connected with the first lead-in wire, blue led chips surface and the second wire surface are electrical connected by copper conductor, and the first lead-in wire, the second lead-in wire, blue led chips and copper conductor are covered by the inside of the epoxy glue layer of doping yellow, red fluorescence powder.
Described blue led chips is InGaN chip.
Described doping yellow, the preparation process of the epoxy glue layer of red fluorescence powder be:
Pour in corundum mortar after weighing 200g strontium carbonate, 300g silicon dioxide, 40g europium oxide and 200g silicon nitride mix homogeneously, add 20g barium fluoride powder, it is transferred in silica crucible after grinding 2h, puts into tube type resistance furnace and in stove, pass into nitrogen until displacing all of which air with 10mL/min speed；After having taken a breath, first it is warming up to 1000 DEG C of pre-burning 1.5h with 10 DEG C/min rate program, then with 5 DEG C/min ramp to 1500 DEG C of insulation calcining 6h, after cooling to sintered product with the furnace room temperature after having calcined, takes out, obtain silica-based nitrogen strontium oxide red fluorescence thing；Weigh the above-mentioned prepared silica-based nitrogen strontium oxide red fluorescence thing of 300g epoxy resin, 15g yttrium-aluminium-garnet and 10g, under room temperature, mix and blend 2h obtains glue-line base material, by in the injecting hole of the bowl-shape two-layered, formed mould of glue-line base material implantation glass obtained, it is injected into mould by the pressure of 10MPa；After injection molding completes, being put into by mould in the baking oven of 110 DEG C and toast, make glue-line base material internal stress fully discharge, forming uniform thickness is 0.8mm rete, is the epoxy glue layer of doping yellow, red fluorescence powder.
The positive and negative electrode of described blue led chips lays respectively on its two sides, and the back side of blue led chips is mounted on the first lead-in wire by elargol.
The high-color rendering white light-emitting diode that the present invention prepares, red fluorescence material used can produce under low temperature, normal pressure, and the expense of Productive statistics is low, can manufacture by rapid, high volume, and the addition due to red fluorescence material so that white light-emitting diode has splendid color rendering properties.
Claims (4)
1. a high-color rendering white light-emitting diode, including the first lead-in wire (1), second lead-in wire (2), blue led chips (3), copper conductor (4) and doping yellow, the epoxy glue layer (5) of red fluorescence powder, it is characterized in that: described blue led chips (3) is mounted on the first lead-in wire (1) and above and is electrical connected with the first lead-in wire (1), blue led chips (3) surface and the second wire surface are electrical connected by copper conductor (4), first lead-in wire (1), second lead-in wire (2), blue led chips (3) and copper conductor (4) are covered by doping yellow, the epoxy glue layer (5) of red fluorescence powder is internal.
2. a kind of high-color rendering white light-emitting diode according to claim 1, it is characterised in that: described blue led chips is InGaN chip.
3. a kind of high-color rendering white light-emitting diode according to claim 1, it is characterised in that: described doping yellow, the preparation process of the epoxy glue layer of red fluorescence powder be:
(1) pour in corundum mortar after weighing 100～200g strontium carbonate, 200～300g silicon dioxide, 30～40g europium oxide and 150～200g silicon nitride mix homogeneously, add 15～20g barium fluoride powder, it is transferred in silica crucible after grinding 1～2h, puts into tube type resistance furnace and in stove, pass into nitrogen until displacing all of which air with 10mL/min speed；
(2) after having taken a breath, first it is warming up to 900～1000 DEG C of pre-burning 1.0～1.5h with 10 DEG C/min rate program, it is incubated calcining 4～6h to 1300～1500 DEG C again with 5 DEG C/min ramp, after cooling to sintered product with the furnace room temperature after having calcined, take out, obtain silica-based nitrogen strontium oxide red fluorescence thing；
(3) the above-mentioned prepared silica-based nitrogen strontium oxide red fluorescence thing of 200～300g epoxy resin, 10～15g yttrium-aluminium-garnet and 5～10g is weighed, under room temperature, mix and blend 1～2h obtains glue-line base material, by in the injecting hole of the bowl-shape two-layered, formed mould of glue-line base material implantation glass obtained, it is injected into mould by the pressure of 5～10MPa；
(4) after injection molding completes, being put into by mould in the baking oven of 105～110 DEG C and toast, make glue-line base material internal stress fully discharge, forming uniform thickness is 0.5～0.8mm rete, is the epoxy glue layer of doping yellow, red fluorescence powder.
4. a kind of high-color rendering white light-emitting diode according to claim 1, it is characterised in that: the positive and negative electrode of described blue led chips lays respectively on its two sides, and the back side of blue led chips is mounted on the first lead-in wire by elargol.
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| CN201610208979.0A CN105720170A (en) | 2016-05-24 | 2016-05-24 | High-color rendering property white light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312881A (en) * | 2020-02-27 | 2020-06-19 | 盐城东山精密制造有限公司 | Integrally formed LED device and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312881A (en) * | 2020-02-27 | 2020-06-19 | 盐城东山精密制造有限公司 | Integrally formed LED device and manufacturing method thereof |
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