CN105720135A - Cooling and annealing process of solar cell - Google Patents
Cooling and annealing process of solar cell Download PDFInfo
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- CN105720135A CN105720135A CN201610099702.9A CN201610099702A CN105720135A CN 105720135 A CN105720135 A CN 105720135A CN 201610099702 A CN201610099702 A CN 201610099702A CN 105720135 A CN105720135 A CN 105720135A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000000137 annealing Methods 0.000 title claims abstract description 14
- 238000001816 cooling Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 126
- 229910052757 nitrogen Inorganic materials 0.000 claims description 63
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 230000002085 persistent effect Effects 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 125000004437 phosphorous atom Chemical group 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 241000628997 Flos Species 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a cooling and annealing process of a solar cell. The cooling and annealing process comprises the following steps of (1) diffusing to enter a boat; (2) oxidizing; (3) diffusing and introducing a source in a low-temperature state; (4) diffusing and pushing a junction in a high-temperature state; (5) taking out a silicon wafer out of a furnace, cooling the silicon wafer, and stabilizing the temperature of a furnace tube; (6) throwing the silicon wafer into the furnace for second times, and carrying out low-temperature annealing; and (7) diffusing to get out of the boat. By the cooling and annealing process, a diffusion dead layer is reduced, thermal defect caused by high-temperature reaction is reduced, and thus, the conversion efficiency of the solar cell is improved; particularly, the open-circuit voltage is obviously increased and is higher than that of a traditional process by 2mV, a filling factor is also improved, and thus, the conversion efficiency of the battery cell is obviously improved; and the thickness of a PN-junction dead layer of the silicon wafer surface after diffusion is reduced, lattice damage brought by high-temperature diffusion is reduced, and minority carrier lifetime is prolonged.
Description
Technical field
The present invention relates to the cooling annealing process of a kind of solaode.
Background technology
At present, polysilicon solar cell technique reaches its maturity, it is achieved standardized production, and main technological steps is as follows: acid corrosion making herbs into wool → diffusion → wet etching trimming → PECVD coated with antireflection film → silk screen printing → sintering → testing, sorting.Wherein, diffusion is wherein most crucial step, and conventional diffusion technique carries phosphorus oxychloride by nitrogen, passes into big nitrogen and dry oxygen simultaneously, at high temperature react with silicon chip, just lowering the temperature after high temperature knot and boat wait unloading piece, so after diffusion, silicon chip surface phosphorus concentration is too high, it is easy to there is thermal defect, and because of the face phosphorus concentration too high life-span that can reduce minority carrier, diffusion " dead layer " is thicker, causes cell piece shortwave phase strain differential, affects cell piece transformation efficiency.
Summary of the invention
It is an object of the present invention to provide the cooling annealing process of a kind of solaode, it can efficiently solve problem existing in background technology.
In order to solve problem existing in background technology, it comprises the steps of
(1). diffuse into boat: the silicon chip after processed with acid floss is inserted in diffusing quartz boat, with silicon carbide paddle, silicon chip is put in boiler tube, entering the boat time is: 400-600s, period passes into big nitrogen, its flow is 10-15slm, and after silicon chip is placed, boiler tube starts to warm up, heating-up time is: 500-700s, and temperature is at 750-790 DEG C；
(2). oxidation: constant temperature, at 750-790 DEG C, first passes into big nitrogen and a small amount of dry oxygen before TongYuan, form layer of silicon dioxide thin layer at silicon chip surface, slow down phosphorus atoms to the diffusion velocity within silicon chip, its big nitrogen flow is 15-20slm, and dry oxygen flow is 300-600sccm, time 150s-300s；
(3). low temperature state spreads TongYuan: constant temperature is at 750-790 DEG C, utilize nitrogen to carry phosphorus oxychloride entrance boiler tube tentatively to spread, and in whole process, pass into big nitrogen and dry oxygen, wherein passing into little nitrogen flow is: 500-1500sccm, big nitrogen flow is: 10-20slm, dry oxygen flow is: 300-1500sccm, and the persistent period is: 600-1500s；
(4). condition of high temperature diffusion knot: by certain intensification slope furnace tube temperature be raised to 810-850 DEG C and remain unchanged, pass into big nitrogen and dry oxygen, at high operating temperatures silicon chip surface phosphorus atoms is advanced to silicon chip is internal, wherein big nitrogen flow is: 10-20slm, dry oxygen flow is: 300-1500sccm, and the persistent period is: 600-1500s；
(5). silicon chip is come out of the stove cooling, stablizes furnace tube temperature: silicon chip silicon carbide paddle is taken out in boiler tube, cools down on silicon carbide paddle, utilize simultaneously and take boat step into boat and allow boiler tube lower the temperature, boiler tube constant temperature at 700-750 DEG C, persistent period 300-900s, pass into big nitrogen 10-15slm；
(6). secondary enters stove process annealing: silicon chip second time enters stove, and constant temperature, at 700-750 DEG C, passes into big nitrogen, dry oxygen and little nitrogen, wherein big nitrogen flow is: 10-20slm, dry oxygen flow is: 100-600sccm, and little nitrogen flow is: 200-500sccm, persistent period 1200-2400s；
(7). diffuse out boat: with silicon carbide paddle, silicon chip being taken out in boiler tube, the time is 400-600s, passes into big nitrogen, and its flow is: 10-15slm.
Owing to have employed above technical scheme, the method have the advantages that
(1). reducing diffusion " dead layer ", reducing the thermal defect that pyroreaction causes, thus improving the transformation efficiency of solaode；
(2). open-circuit voltage promotes particularly evident, exceeds more than traditional handicraft 2mV, and fill factor, curve factor is also improved, thus the transformation efficiency of cell piece significantly improves；
(3). decrease PN junction " dead layer " thickness of silicon chip surface after diffusion, reduce the lattice damage that High temperature diffusion is brought, improve minority carrier life time, and anneal processing steps passes into a small amount of little nitrogen after the diffusion, the original PN junction of silicon chip surface is formed again PN junction thin layer one layer new, strengthen silicon chip surface phosphorus atom concentration distribution gradient, improve diffusion quality further, promote the uniformity of sheet resistance after spreading, so as to have better matching with follow-up sintering, the Ohmic contact advantageously formed, thus promoting the transformation efficiency of cell piece, reaches the purpose of cost efficiency.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and effect and be easy to understand, below the technical scheme in the embodiment of the present invention is clearly and completely described.
Adopt association's former silicon chip of prosperous S3 to accurately distinguish, be used that the normal making herbs into wool of common process, and after diffusion, subsequent technique all adopts conventional same process to produce, and carry out experimental demonstration by following example.
Embodiment 1
(1). low temperature state spreads TongYuan: constant temperature is at 750 DEG C, and passes into big nitrogen and dry oxygen in whole process, wherein passes into little nitrogen flow and is: 900sccm, and big nitrogen flow is: 15slm, and dry oxygen flow is: 300sccm, and the persistent period is: 1200s；
(2). condition of high temperature diffusion knot: by certain intensification slope furnace tube temperature being raised to 820 DEG C and remain unchanged, passing into big nitrogen and dry oxygen, big nitrogen flow is: 15slm, and dry oxygen flow is: 300sccm, and the persistent period is: 900s；
(3). silicon chip is come out of the stove cooling, stablizes furnace tube temperature: silicon chip silicon carbide paddle is taken out in boiler tube, cools down on silicon carbide paddle, utilizes simultaneously and takes boat step into boat and allow boiler tube lower the temperature, boiler tube constant temperature at 700 DEG C, persistent period 300s, pass into big nitrogen 10slm；
(4). secondary enters stove process annealing: silicon chip second time enters stove, and constant temperature, at 700 DEG C, passes into big nitrogen, dry oxygen and little nitrogen, and wherein big nitrogen flow is: 10slm, and dry oxygen flow is: 200sccm, and little nitrogen flow is: 200sccm, and the persistent period is: 1200s.
Unit for electrical property parameters contrast is as follows:
| Classification | Sheet number | Open-circuit voltage | Short circuit current | Series resistance | Parallel resistance | Fill factor, curve factor | Transformation efficiency | Leakage current |
| Experimental technique | 391 | 0.6355 | 8.666 | 0.0025 | 892.4 | 79.35 | 17.96 | 0.097 |
| Traditional handicraft | 394 | 0.6328 | 8.634 | 0.0023 | 865.3 | 79.51 | 17.86 | 0.059 |
Embodiment 2:
(1). low temperature state spreads TongYuan: constant temperature is at 770 DEG C, and passes into big nitrogen and dry oxygen in whole process, wherein passes into little nitrogen flow and is: 850sccm, and big nitrogen flow is: 15slm, and dry oxygen flow is: 300sccm, and the persistent period is: 1500s；
(2). condition of high temperature diffusion knot: by certain intensification slope furnace tube temperature being raised to 820 DEG C and remain unchanged, passing into big nitrogen and dry oxygen, big nitrogen flow is: 17slm, and dry oxygen flow is: 400sccm, and the persistent period is: 1200s；
(3). silicon chip is come out of the stove cooling, stablizes furnace tube temperature: silicon chip silicon carbide paddle is taken out in boiler tube, cools down on silicon carbide paddle, utilizes simultaneously and takes boat step into boat and allow boiler tube lower the temperature, boiler tube constant temperature at 750 DEG C, persistent period 300s, pass into big nitrogen 10slm；
(4). secondary enters stove process annealing: silicon chip second time enters stove, and constant temperature, at 750 DEG C, passes into big nitrogen, dry oxygen and little nitrogen, and wherein big nitrogen flow is: 15slm, and dry oxygen flow is: 300sccm, and little nitrogen flow is: 300sccm, and the persistent period is: 1200s.
Unit for electrical property parameters contrast is as follows:
| Classification | Sheet number | Open-circuit voltage | Short circuit current | Series resistance | Parallel resistance | Fill factor, curve factor | Transformation efficiency | Leakage current |
| Experimental technique | 1593 | 0.6355 | 8.642 | 0.0024 | 976.3 | 79.70 | 17.99 | 0.143 |
| Traditional handicraft | 1597 | 0.6323 | 8.647 | 0.0024 | 793.8 | 79.63 | 17.90 | 0.056 |
Embodiment 3:
(1). low temperature state spreads TongYuan: constant temperature is at 770 DEG C, and passes into big nitrogen and dry oxygen in whole process, wherein passes into little nitrogen flow and is: 850sccm, and big nitrogen flow is: 17slm, and dry oxygen flow is: 400sccm, and the persistent period is: 1200s；
(2). condition of high temperature diffusion knot: by certain intensification slope furnace tube temperature being raised to 820 DEG C and remain unchanged, passing into big nitrogen and dry oxygen, big nitrogen flow is: 17slm, and dry oxygen flow is: 400sccm, and the persistent period is: 1200s；
(3). silicon chip is come out of the stove cooling, stablizes furnace tube temperature: silicon chip silicon carbide paddle is taken out in boiler tube, cools down on silicon carbide paddle, utilizes simultaneously and takes boat step into boat and allow boiler tube lower the temperature, boiler tube constant temperature at 750 DEG C, persistent period 300s, pass into big nitrogen 10slm；
(4). secondary enters stove process annealing: silicon chip second time enters stove, and constant temperature, at 720 DEG C, passes into big nitrogen, dry oxygen and little nitrogen, and wherein big nitrogen flow is: 15slm, and dry oxygen flow is: 300sccm, and little nitrogen flow is: 200sccm, and the persistent period is: 1500s.
Unit for electrical property parameters contrast is as follows:
| Classification | Sheet number | Open-circuit voltage | Short circuit current | Series resistance | Parallel resistance | Fill factor, curve factor | Transformation efficiency | Leakage current |
| Experimental technique | 796 | 0.6344 | 8.659 | 0.0023 | 869.3 | 79.70 | 18.00 | 0.060 |
| Traditional handicraft | 799 | 0.6321 | 8.660 | 0.0025 | 880.3 | 79.28 | 17.84 | 0.069 |
Last it is noted that above example is only in order to illustrate technical scheme, it is not intended to limit；Although the present invention being described in detail with reference to previous embodiment, it will be understood by those within the art that, the technical scheme described in foregoing embodiments still can be modified by it, or wherein portion of techniques feature carries out equivalent replacement；And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (1)
1. the cooling annealing process of a solaode, it is characterised in that it comprises the steps of
(1). diffuse into boat: the silicon chip after processed with acid floss is inserted in diffusing quartz boat, with silicon carbide paddle, silicon chip is put in boiler tube, entering the boat time is: 400-600s, period passes into big nitrogen, its flow is 10-15slm, and after silicon chip is placed, boiler tube starts to warm up, heating-up time is: 500-700s, and temperature is at 750-790 DEG C；
(2). oxidation: constant temperature, at 750-790 DEG C, first passes into big nitrogen and a small amount of dry oxygen before TongYuan, form layer of silicon dioxide thin layer at silicon chip surface, slow down phosphorus atoms to the diffusion velocity within silicon chip, its big nitrogen flow is 15-20slm, and dry oxygen flow is 300-600sccm, time 150s-300s；
(3). low temperature state spreads TongYuan: constant temperature is at 750-790 DEG C, utilize nitrogen to carry phosphorus oxychloride entrance boiler tube tentatively to spread, and in whole process, pass into big nitrogen and dry oxygen, wherein passing into little nitrogen flow is: 500-1500sccm, big nitrogen flow is: 10-20slm, dry oxygen flow is: 300-1500sccm, and the persistent period is: 600-1500s；
(4). condition of high temperature diffusion knot: by certain intensification slope furnace tube temperature be raised to 810-850 DEG C and remain unchanged, pass into big nitrogen and dry oxygen, at high operating temperatures silicon chip surface phosphorus atoms is advanced to silicon chip is internal, wherein big nitrogen flow is: 10-20slm, dry oxygen flow is: 300-1500sccm, and the persistent period is: 600-1500s；
(5). silicon chip is come out of the stove cooling, stablizes furnace tube temperature: silicon chip silicon carbide paddle is taken out in boiler tube, cools down on silicon carbide paddle, utilize simultaneously and take boat step into boat and allow boiler tube lower the temperature, boiler tube constant temperature at 700-750 DEG C, persistent period 300-900s, pass into big nitrogen 10-15slm；
(6). secondary enters stove process annealing: silicon chip second time enters stove, and constant temperature, at 700-750 DEG C, passes into big nitrogen, dry oxygen and little nitrogen, wherein big nitrogen flow is: 10-20slm, dry oxygen flow is: 100-600sccm, and little nitrogen flow is: 200-500sccm, persistent period 1200-2400s；
(7). diffuse out boat: with silicon carbide paddle, silicon chip being taken out in boiler tube, the time is 400-600s, passes into big nitrogen, and its flow is: 10-15slm.
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| CN201610099702.9A CN105720135A (en) | 2016-02-24 | 2016-02-24 | Cooling and annealing process of solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086176A (en) * | 2017-04-20 | 2017-08-22 | 通威太阳能（合肥）有限公司 | The low surface concentration of one kind diffusion puies forward effect technique |
| CN107256907A (en) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
| CN109860334A (en) * | 2019-01-16 | 2019-06-07 | 晶科能源科技（海宁）有限公司 | A kind of matching HF/HNO3The high quality phosphorus diffusion method of system selective etch |
| CN109873052A (en) * | 2019-03-29 | 2019-06-11 | 山西潞安太阳能科技有限责任公司 | A kind of solar battery diffusion post growth annealing |
| CN110379885A (en) * | 2019-06-28 | 2019-10-25 | 徐州谷阳新能源科技有限公司 | A kind of diffusion technique improving cell piece efficiency |
| CN113206008A (en) * | 2021-05-21 | 2021-08-03 | 天津爱旭太阳能科技有限公司 | Solar cell diffusion method and solar cell |
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|---|---|---|---|---|
| US4436557A (en) * | 1982-02-19 | 1984-03-13 | The United States Of America As Represented By The United States Department Of Energy | Modified laser-annealing process for improving the quality of electrical P-N junctions and devices |
| KR20130088607A (en) * | 2012-01-31 | 2013-08-08 | 전북대학교산학협력단 | Method for manufacturing silicon film for solar devices using plasma spray and annealing process |
| CN103681976A (en) * | 2013-12-27 | 2014-03-26 | 百力达太阳能股份有限公司 | High-efficiency low-cost solar cell diffusion technology |
| CN105280484A (en) * | 2015-06-05 | 2016-01-27 | 常州天合光能有限公司 | Diffusion technique of crystal-silicon efficient high-sheet-resistance battery piece |
-
2016
- 2016-02-24 CN CN201610099702.9A patent/CN105720135A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4436557A (en) * | 1982-02-19 | 1984-03-13 | The United States Of America As Represented By The United States Department Of Energy | Modified laser-annealing process for improving the quality of electrical P-N junctions and devices |
| KR20130088607A (en) * | 2012-01-31 | 2013-08-08 | 전북대학교산학협력단 | Method for manufacturing silicon film for solar devices using plasma spray and annealing process |
| CN103681976A (en) * | 2013-12-27 | 2014-03-26 | 百力达太阳能股份有限公司 | High-efficiency low-cost solar cell diffusion technology |
| CN105280484A (en) * | 2015-06-05 | 2016-01-27 | 常州天合光能有限公司 | Diffusion technique of crystal-silicon efficient high-sheet-resistance battery piece |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086176A (en) * | 2017-04-20 | 2017-08-22 | 通威太阳能（合肥）有限公司 | The low surface concentration of one kind diffusion puies forward effect technique |
| CN107256907A (en) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
| CN109860334A (en) * | 2019-01-16 | 2019-06-07 | 晶科能源科技（海宁）有限公司 | A kind of matching HF/HNO3The high quality phosphorus diffusion method of system selective etch |
| CN109873052A (en) * | 2019-03-29 | 2019-06-11 | 山西潞安太阳能科技有限责任公司 | A kind of solar battery diffusion post growth annealing |
| CN109873052B (en) * | 2019-03-29 | 2021-04-20 | 山西潞安太阳能科技有限责任公司 | Annealing process after diffusion of solar cell |
| CN110379885A (en) * | 2019-06-28 | 2019-10-25 | 徐州谷阳新能源科技有限公司 | A kind of diffusion technique improving cell piece efficiency |
| CN113206008A (en) * | 2021-05-21 | 2021-08-03 | 天津爱旭太阳能科技有限公司 | Solar cell diffusion method and solar cell |
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Application publication date: 20160629 |