CN105679918A - Wavelength conversion device and preparation method and application thereof - Google Patents
Wavelength conversion device and preparation method and application thereof Download PDFInfo
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- CN105679918A CN105679918A CN201610209692.XA CN201610209692A CN105679918A CN 105679918 A CN105679918 A CN 105679918A CN 201610209692 A CN201610209692 A CN 201610209692A CN 105679918 A CN105679918 A CN 105679918A
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- wavelength conversion
- conversion devices
- wavelength
- changing element
- transparent substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
Provides is a wavelength conversion device, which comprises a sealed glass tube, a transparent substrate arranged in the glass tube and one or more wavelength conversion elements arranged on the substrate. The wavelength conversion device is simple in structure and has a successive space, and quality change thereof is identified easily. The invention also provides a preparation method of the wavelength conversion device, a light-emitting module, a backlight unit and a display device.
Description
Technical field
The invention belongs to display and lighting field, be specifically related to a kind of Wavelength conversion devices and preparation method thereof, light emitting module, back light unit and display device.
Background technology
Quantum dot is also called nanocrystal, is generally between 1-20 nanometer for particle diameter and has the material of crystal structure. Owing to electronics and hole are by quantum confinement, continuous print band structure becomes the discrete energy levels structure with molecular characterization, can emitting fluorescence after being excited. The fluorescence light emission characteristic of quantum dot can by controlling its composition, size, structure realize.
Owing to quantum dot has that particle size is controlled, is uniformly dispersed, excites transformation efficiency high, stable and the optical property of the more high excellence of light efficiency, it has shown bigger application prospect in display device field. Especially the half-peak breadth of the luminescent spectrum of quantum dot is narrower than the fluorescent material that existing display field uses, and TV can be made to have high colour gamut (NTSC).
Quanta point material is subject to the impact of high temperature, oxygen and steam and causes losing efficacy, and therefore the utilization of currently commercially quantum dot all needs protection quanta point material. Way commonplace at present is broadly divided into two kinds, and one is the form adopting quantum dot diaphragm, is encapsulated by quanta point material by macromolecular material; Another kind is the form of quantum dot stick, is encapsulated in hollow glass tube envelope by quanta point material.
Quantum dot diaphragm needs the quanta point material used many, the more difficult control of colourity, and light emission rate is low. Comparatively speaking, Quantum Dot Glass pipe controls in material usage, colourity and all relatively has production on light emission rate. But, Quantum Dot Glass pipe yet suffers from some problems in exploitation application, for instance, the validation checking problem of quanta point material in Quantum Dot Glass pipe. The design of Quantum Dot Glass pipe causes if inside exists what the cost such as oxygen or steam was extremely difficult to detect. Identify in quantum dot glass tubing whether there is oxygen or steam in order to convenient, Quantum Dot Glass pipe needs there is successional space, so that staff knows as early as possible whether there is oxygen or steam in Quantum Dot Glass pipe between quanta point material and glass.
For making to need there is successional space between quanta point material and glass, it is necessary to extremely difficult technique and cost, this is a difficulty of Quantum Dot Glass pipe industrialization.
Therefore, for above-mentioned technical problem, it is necessary to further the preparation of Quantum Dot Glass pipe is improved.
Summary of the invention
The technical problem to be solved is: provide a kind of Wavelength conversion devices, its simple in construction and have successional space, it is easy to identify the quality of Wavelength conversion devices.
The invention discloses a kind of Wavelength conversion devices, including the glass tubing sealed, be positioned at the transparent substrates of described glass tubing and be arranged on described one or more Wavelength changing element suprabasil.
Preferably, in the glass tubing of described sealing, the space beyond Wavelength changing element described in described transparent substrates core is vacuum or noble gas.
Preferably, described glass tubing is bar shaped pipe or plate pipe.
Preferably, the cross section of described bar shaped pipe is triangle, square, polygon, circular or oval.
Preferably, described Wavelength changing element includes quantum dot or fluorescent material or the mixture of the two.
Preferably, described Wavelength changing element includes the dispersed transparent polymer material having quantum dot.
Preferably, described quantum dot includes at least one in following compound: II race-Group VIA compound, IV race-Group VIA compound, III-VA compounds of group, I race-Group VIA compound, sulfuration copper and indium and copper indium diselenide.
Preferably, described Wavelength changing element includes peak wavelength and is positioned at the first quantum dot of green light band and peak wavelength is positioned at the second quantum dot of red spectral band.
Preferably, the material of described transparent substrates is glass or polymer.
Preferably, described polymer includes polymethyl methacrylate.
Preferably, described transparent substrates is strip.
Preferably, the cross section of described transparent substrates is triangle, square, polygon, circular or oval.
Preferably, described transparent substrates includes lens arrangement, and described Wavelength changing element is arranged on described lens arrangement surface.
Preferably, described transparent substrates is uniformly coated with Wavelength conversion devices.
The preparation method that the invention also discloses a kind of Wavelength conversion devices, comprises the following steps: be dispersed with the liquid dispersion medium of quantum dot in the one side of transparent substrates according to predetermined distribution coating; By heating or liquid dispersion medium formation Wavelength changing element described in illumination curing; The transparent substrates being provided with Wavelength changing element is placed in glass tubing; Get rid of oxygen and steam; Sealing.
The invention also discloses a kind of light emitting module, including: luminescent device and Wavelength conversion devices as above, described Wavelength conversion devices is adjacent to described luminescent device, and described Wavelength changing element is positioned on the light emission direction of described luminescent device.
Preferably, described luminescent device includes substrate and installs multiple light-emitting device chip on the substrate, and each described Wavelength changing element is corresponding with light-emitting device chip one or more described.
The invention also discloses a kind of back light unit, including luminescent device, light guide plate and Wavelength conversion devices as above, described Wavelength conversion devices is between described luminescent device and described light guide plate.
The invention also discloses a kind of display device, including back light unit described above and for showing the image panel of image.
Compared with prior art, the method have the advantages that the design of the Wavelength conversion devices of the present invention is simple, it is easy to preparation, and readily identified wherein whether there is oxygen or steam, be convenient for changing. Light emitting module, back light unit and the display device prepared by the Wavelength conversion devices of the present invention all demonstrates good luminescent properties and longer life-span.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a detailed description of the invention of back light unit in the present invention;
Fig. 2 is the assembling process schematic diagram of a detailed description of the invention of medium wavelength switching device of the present invention;
Fig. 3 is the schematic diagram of a detailed description of the invention at the quantum dot-based end being provided with Wavelength changing element in the present invention.
Detailed description of the invention
Below in conjunction with embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiment. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the premise not making creative work, broadly fall into scope. The accompanying drawing of the present invention is only schematically illustrate embodiments of the present invention, and in order to know that declaratives dimension scale is exaggerated or reduces, concrete size or dimension scale are as the criterion with description or known general knowledge.
The invention discloses a kind of display device, including back light unit 100 and for showing the image panel of image. As it is shown in figure 1, back light unit 100 includes light emitting module 102 and light guide plate 104. Light emitting module 102 includes luminescent device 106 and Wavelength conversion devices 108. Wavelength conversion devices 108 is contiguous with luminescent device 106 and on the light emission direction of luminescent device 106.
In a preferred embodiment, back light unit 100 also includes being positioned at light guide plate 104 back side reflector plate and be positioned at one or more blooming piece near light guide plate 104 exiting surface.
Wavelength conversion devices 108 includes the glass tubing 110 sealed, the transparent substrates 112 being positioned at glass tubing 110 and one or more Wavelength changing element 114. Wavelength changing element 114 is arranged on transparent substrates. It is vacuum or noble gas in the glass tubing 110 sealed. In one preferred embodiment, as in figure 2 it is shown, transparent substrates 112 is provided with multiple Wavelength changing element 114, and have same towards. Preferably, Wavelength changing element 114 is just to luminescent device 106. By being arranged in transparent substrates 112 by Wavelength changing element 114, it is possible to Simplified flowsheet, the convenient seriality space obtained in glass tubing, thus being easier to identify the rotten of quantum dot.
In one preferred embodiment, the Wavelength changing element 114 in transparent substrates 112 is towards luminescent device 106. Another preferred embodiment in, the backward luminous device 106 of Wavelength changing element 114 in transparent substrates 112, as shown in Figure 2.
In one preferred embodiment, glass tubing 110 is bar shaped pipe. In a specific embodiment, glass tubing 110 is flat bar shaped pipe. Preferably, the cross section of the glass tubing 110 of bar shaped be triangle, square, polygon, circle, ellipse or with any of the above-described graphics class like shape. Certainly, the glass tubing 110 of bar shaped is not limited to above-mentioned shape of cross section.
In one preferred embodiment, glass tubing 110 is plate pipe. Preferably, plate pipe is polygon, circle or similar round. The plate pipe light emitting module for illuminating. In a specific embodiment, the invention discloses a kind of illuminator, including luminescent device 106 and Wavelength conversion devices 108. Wavelength conversion devices 108 includes plate glass tubing 110 and is positioned at the Wavelength changing element 114 of glass tubing 110. In a specific embodiment, back light unit 100 is straight incident type, and glass tubing 110 is plate.
Fitting with luminescent device 106 in order to convenient, glass tubing 110 surface is substantially identical with the shape of luminescent device 106 with the one side shape of luminescent device 106 laminating. In a preferred embodiment, the light-emitting area of luminescent device 106 is plane, and the one side that glass tubing 110 is fitted with luminescent device 106 is plane, as shown in Figure 2.
As it is shown on figure 3, Wavelength changing element 114 includes the dispersed transparent polymer material 118 having quantum dot 116. Wavelength changing element 114 includes but not limited to quantum dot 116, also includes the mixture of fluorescent material or quantum dot 116 and fluorescent material. The thickness of Wavelength changing element 114 is preferably 10 microns-1 millimeter, more preferably 100 microns-500 microns.
In the present invention, quantum dot 116 includes at least one in following compound: II race-Group VIA compound (refers in particular to the compound elementary composition by II race element and Group VIA), IV race-Group VIA compound (refering in particular to the compound elementary composition by IV race element and Group VIA), III-VA compounds of group (refering in particular to the compound elementary composition with VA race by group-III element), I race-Group VIA compound (refering in particular to the compound elementary composition by I race element and Group VIA), sulfuration copper and indium and copper indium diselenide.
II race-Group VIA compound includes: zinc selenide, zinc telluridse, zinc sulfide, cadmium selenide, cadmium sulfide, cadmium telluride, zinc oxide, cinnabar, telluride hydrargyrum, magnesium oxide, magnesium sulfide, telluride magnesium, cadmium sulfoselenide, sulfur cadmium telluride, zinc sulfur selenide, sulfur zinc telluridse, selenium zinc telluridse, sulfur mercury selenide, sulfur telluride hydrargyrum, selen-tellurjum hydrargyrum, cadmium-zinc selenide, zinc-cadmium sulfide, cadmium zinc telluride, hydrargyrum cadmium sulfide, selenium cadmium zinc telluride, sulfur cadmium zinc telluride, zinc sulfur selenide cadmium, sulfur cadmium mercury telluride, sulfur mercury selenide cadmium, selenium cadmium mercury telluride, sulfur telluride hydrargyrum zinc, sulfur mercury selenide zinc, selen-tellurjum hydrargyrum zinc, magnesium sulfide zinc, telluride magnesium zinc, magnesium selenide zinc, magnesium zinc oxide, oxygen magnesium sulfide zinc, sulfur magnesium selenide zinc, tellurium magnesium selenide zinc, sulfur telluride magnesium zinc. in a preferred embodiment, quantum dot 116 includes at least one in above-mentioned II race-Group VIA compound.
IV race-Group VIA compound includes: vulcanized lead, lead selenide, lead telluride, Tin disulfide, Tin diselenide., telluride stannum, sulfur telluride stannum, sulfur Tin diselenide., selen-tellurjum stannum, sulfur lead telluride, sulfur lead selenide, selenium lead telluride, sulfuration tin-lead, telluride tin-lead, selenizing tin-lead, sulfur selenizing tin-lead, sulfur telluride tin-lead; In a preferred embodiment, quantum dot 116 includes at least one in above-mentioned IV race-Group VIA compound.
III-VA compounds of group includes: indium phosphide, indium arsenide, gallium nitride, gallium phosphide, GaAs, gallium antimonide, aluminium nitride, aluminum phosphate, aluminium arsenide, aluminium antimonide, indium nitride, indium antimonide, nitrogen gallium phosphide, nitrogen GaAs, nitrogen gallium antimonide, phosphorus gallium antimonide, gallium arsenide phosphide, nitrogen aluminum phosphate, nitrogen aluminium arsenide, nitrogen phosphatization gallium aluminium, nitrogen aluminium antimonide gallium, phosphorus aluminium antimonide gallium, phosphorus aluminum gallium arsenide, nitrogen InGaP, nitrogen InGaAsP, nitrogen indium antimonide gallium, phosphorus indium antimonide gallium, phosphorus InGaAsP, indium nitride aluminum, indium phosphide aluminium, indium arsenide aluminum, indium antimonide aluminum, described I race-VI compounds of group includes: copper sulfide, telluride copper, copper selenide, Argentous sulfide., silver selenide, silver telluride. in a preferred embodiment, quantum dot 116 includes at least one in above-mentioned III-Group VIA compound.
In a preferred embodiment, quantum dot 116 includes at least one in following material: Mn2+Doping zinc selenide, Mn2+Doped zinc sulphide, Mn2+Doping zinc telluridse, Mn2+Doped selenium cadmium, Mn2+Doped cadmium sulfide, Mn2+Doping cadmium telluride, Mn2+Doping zinc selenide, Mn2+Doped zinc sulphide, Mn2+Doping zinc telluridse, Mn2+Doped selenium cadmium, Mn2+Doped cadmium sulfide, Mn2+Doping cadmium telluride, Co2+Doping zinc selenide, Co2+Doped zinc sulphide, Co2+Doping zinc telluridse, Co2+Doped selenium cadmium, Co2+Doped cadmium sulfide, Co2+Doping cadmium telluride, Ni2+Doping zinc selenide, Ni2+Doped zinc sulphide, Ni2+Doping zinc telluridse, Ni2+Doped selenium cadmium, Ni2+Doped cadmium sulfide, Ni2+Doping cadmium telluride, Ag+Doping zinc selenide, Ag+Doped zinc sulphide, Ag+Doping zinc telluridse, Ag+Doped selenium cadmium, Ag+Doped cadmium sulfide, Ag+Doping cadmium telluride, Cu+Doping indium phosphide, Cu+Doping indium arsenide, Ag+Doping indium phosphide, Ag+Doping indium arsenide, Mn2+Doping indium phosphide, Mn2+Doping indium arsenide.
Wavelength changing element 114 in the present invention includes one or more quantum dots 116. In one preferred embodiment, Wavelength changing element 114 includes peak wavelength and is positioned at the first quantum dot of green light band and peak wavelength is positioned at the second quantum dot of red spectral band, first quantum dot and the second quantum dot are dispersed in macromolecular material 118, and luminescent device 106 launches blue light. Wavelength changing element 114 sends white light. Preferably, the wave-length coverage of the first quantum dot is 510nm-540nm, and the wave-length coverage of the second quantum dot is 610-640nm.
Macromolecular material 118 includes but not limited at least one of the selection in the group of the mixture composition of epoxy resin, polysiloxanes, acrylic polymer, glass, carbonic ether base polymer and above-mentioned material.
The material of transparent substrates 112 includes but not limited to glass or polymer. In a preferred embodiment, transparent substrates 112 includes the one in polymethyl methacrylate, polyethylene terephthalate.
In a preferred embodiment, transparent substrates 112 is strip. Preferably, the cross section of transparent substrates 112 is triangle, square, polygon, circular or oval. In a preferred embodiment, transparent substrates 112 is that glass is bar-shaped. In another preferred embodiment, transparent substrates 112 is strip glass laminate.
In one preferred embodiment, transparent substrates 112 includes lens arrangement, and Wavelength changing element 114 is arranged on lens arrangement surface.
In one preferred embodiment, transparent substrates 112 includes groove structure, and Wavelength changing element 114 is arranged in groove structure.
The combination of transparent substrates 112 and Wavelength changing element 114 includes but not limited to bonding, coating and printing. In one preferred embodiment, described transparent substrates 112 is uniformly coated with Wavelength changing element 114.
The preparation method that the invention also discloses a kind of Wavelength conversion devices 108, comprises the following steps: be dispersed with the liquid dispersion medium of quantum dot 116 in the one side of transparent substrates 112 according to predetermined distribution coating; By heating or illumination curing liquid dispersion medium formation Wavelength changing element 114; The transparent substrates 112 being provided with Wavelength changing element 114 is placed in glass tubing 110; Get rid of oxygen and steam; Sealing. The method getting rid of oxygen and steam includes evacuation or is filled with noble gas. Sealing uses sealing compound, include but not limited to epoxy resin, polysiloxanes, acrylic polymer, glass, carbonic ether base polymer and above-mentioned material mixture composition group at least one of selection. In one preferred embodiment, one end of glass tubing 110 seals, and other end opening, after the transparent substrates 112 being provided with Wavelength changing element 114 is placed in glass tubing 110 from opening, carries out evacuation or is filled with noble gas, and sealing. Liquid dispersion medium is preferably macromolecular material 118 presoma dispersion liquid, and macromolecular material 118 presoma dispersion liquid is preferably crylic acid resin UV glue.
In a preferred embodiment, luminescent device 106 includes substrate and the multiple light-emitting device chip being arranged on substrate, each Wavelength changing element 114 is corresponding with light-emitting device chip one or more described, absorbs the luminescence of corresponding light-emitting device chip as much as possible. As in figure 2 it is shown, luminescent device 106 includes 4 light-emitting device chip, then transparent substrates 112 is provided with corresponding 4 Wavelength changing element 114.Luminescent device 106 includes but not limited to light emitting diode (LED) and laser diode. The transmitted wave length of the quantum dot 116 in the wavelength ratio Wavelength conversion devices that luminescent device 106 is light emitted. In a preferred embodiment, luminescent device is blue led, specifically can use the gallium nitride based LED launching the blue light that wavelength is 420nm to 480nm.
In one preferred embodiment, the light emitting module 102 of the present invention can as a kind of illuminator.
Although technical scheme has been done elaboration in greater detail and has enumerated by inventor, it is to be understood that, to those skilled in the art, above-described embodiment is modified and/or flexible or that employing is equivalent replacement scheme is obvious, all can not depart from the essence of spirit of the present invention, the term occurred in the present invention is used for the elaboration to technical solution of the present invention and understanding, can not be construed as limiting the invention.
Claims (16)
1. a Wavelength conversion devices, it is characterised in that include the glass tubing of sealing, be positioned at the transparent substrates of described glass tubing and be arranged on described one or more Wavelength changing element suprabasil.
2. Wavelength conversion devices according to claim 1, it is characterised in that: in the glass tubing of described sealing, the space beyond Wavelength changing element described in described transparent substrates core is vacuum or noble gas.
3. Wavelength conversion devices according to claim 1, it is characterised in that: described glass tubing is bar shaped pipe or plate pipe.
4. Wavelength conversion devices according to claim 1, it is characterised in that: the cross section of described bar shaped pipe is triangle, square, polygon, circular or oval.
5. Wavelength conversion devices according to claim 1, it is characterised in that: described Wavelength changing element includes quantum dot or fluorescent material or the mixture of the two.
6. Wavelength conversion devices according to claim 1, it is characterised in that: described Wavelength changing element includes the dispersed transparent polymer material having quantum dot.
7. Wavelength conversion devices according to claim 1, it is characterised in that: described Wavelength changing element includes peak wavelength and is positioned at the first quantum dot of green light band and peak wavelength is positioned at the second quantum dot of red spectral band.
8. Wavelength conversion devices according to claim 1, it is characterised in that: the material of described transparent substrates is glass or polymer.
9. Wavelength conversion devices according to claim 1, it is characterised in that: described transparent substrates is strip.
10. Wavelength conversion devices according to claim 1, it is characterised in that: the cross section of described transparent substrates is triangle, square, polygon, circular or oval.
11. Wavelength conversion devices according to claim 1, it is characterised in that: described transparent substrates includes lens arrangement, and described Wavelength changing element is arranged on described lens arrangement surface.
12. the preparation method of a Wavelength conversion devices, it is characterised in that comprise the following steps: be dispersed with the liquid dispersion medium of quantum dot in the one side of transparent substrates according to predetermined distribution coating; By heating or liquid dispersion medium formation Wavelength changing element described in illumination curing; The transparent substrates being provided with Wavelength changing element is placed in glass tubing; Get rid of oxygen and steam; Sealing.
13. a light emitting module, it is characterized in that, including: luminescent device and in claim 1-11 arbitrary as described in Wavelength conversion devices, described Wavelength conversion devices is adjacent to described luminescent device, and described Wavelength changing element is positioned on the light emission direction of described luminescent device.
14. light emitting module according to claim 13, it is characterised in that: described luminescent device includes substrate and installs multiple light-emitting device chip on the substrate, and each described Wavelength changing element is corresponding with light-emitting device chip one or more described.
15. a back light unit, it is characterised in that include luminescent device, light guide plate and arbitrary in claim 1-11 as described in Wavelength conversion devices, described Wavelength conversion devices is between described luminescent device and described light guide plate.
16. a display device, it is characterised in that include back light unit as described in claim 15 and for showing the image panel of image.
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| CN201610209692.XA CN105679918A (en) | 2016-04-06 | 2016-04-06 | Wavelength conversion device and preparation method and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610209692.XA CN105679918A (en) | 2016-04-06 | 2016-04-06 | Wavelength conversion device and preparation method and application thereof |
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| CN105679918A true CN105679918A (en) | 2016-06-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106199835A (en) * | 2016-07-20 | 2016-12-07 | 京东方科技集团股份有限公司 | A kind of optical fiber lens manufacture method and optical fiber lens |
| CN106802438A (en) * | 2017-02-04 | 2017-06-06 | 苏州星烁纳米科技有限公司 | Quantum dot optical element, backlight module and display device |
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| JP2004034430A (en) * | 2002-07-02 | 2004-02-05 | Fuji Photo Film Co Ltd | Fluorescent lamp unit and optical fixing unit |
| CN102971583A (en) * | 2010-07-01 | 2013-03-13 | 皇家飞利浦电子股份有限公司 | TL retrofit LED module outside sealed glass tube |
| CN103155024A (en) * | 2010-10-05 | 2013-06-12 | 英特曼帝克司公司 | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
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| JP2004034430A (en) * | 2002-07-02 | 2004-02-05 | Fuji Photo Film Co Ltd | Fluorescent lamp unit and optical fixing unit |
| CN102971583A (en) * | 2010-07-01 | 2013-03-13 | 皇家飞利浦电子股份有限公司 | TL retrofit LED module outside sealed glass tube |
| CN103155024A (en) * | 2010-10-05 | 2013-06-12 | 英特曼帝克司公司 | Solid-state light emitting devices and signage with photoluminescence wavelength conversion |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106199835A (en) * | 2016-07-20 | 2016-12-07 | 京东方科技集团股份有限公司 | A kind of optical fiber lens manufacture method and optical fiber lens |
| CN106802438A (en) * | 2017-02-04 | 2017-06-06 | 苏州星烁纳米科技有限公司 | Quantum dot optical element, backlight module and display device |
| CN106802438B (en) * | 2017-02-04 | 2019-08-27 | 苏州星烁纳米科技有限公司 | Quantum dot optical element, backlight module and display device |
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