CN105679875B - 一种波导集成的硅基单光子探测器 - Google Patents
一种波导集成的硅基单光子探测器 Download PDFInfo
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- CN105679875B CN105679875B CN201610129654.3A CN201610129654A CN105679875B CN 105679875 B CN105679875 B CN 105679875B CN 201610129654 A CN201610129654 A CN 201610129654A CN 105679875 B CN105679875 B CN 105679875B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
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CN201610129654.3A CN105679875B (zh) | 2016-03-08 | 2016-03-08 | 一种波导集成的硅基单光子探测器 |
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11557877B2 (en) | 2017-02-28 | 2023-01-17 | Hewlett Packard Enterprise Development Lp | Quantum-dot photonics |
CN107329208B (zh) * | 2017-07-10 | 2023-05-09 | 熠谱(上海)半导体制造有限公司 | 一种折射率梯度变化的硅光子模斑转换器 |
CN107561640A (zh) * | 2017-08-18 | 2018-01-09 | 中国科学院半导体研究所 | 硅纳米线波导与光纤耦合结构及其制作方法 |
CN110896112B (zh) * | 2018-08-22 | 2022-04-12 | 上海新微技术研发中心有限公司 | 波导集成的GeSn光电探测器及其制造方法 |
CN109596570A (zh) * | 2018-10-24 | 2019-04-09 | 昆明理工大学 | 一种基于硅基光电探测器的生化传感*** |
CN109324372B (zh) * | 2018-11-09 | 2024-02-09 | 熠谱(上海)半导体制造有限公司 | 一种硅光波导端面耦合器 |
US10811549B2 (en) | 2019-01-29 | 2020-10-20 | Hewlett Packard Enterprise Development Lp | Quantum-dot-based avalanche photodiodes on silicon |
CN110649455A (zh) * | 2019-09-30 | 2020-01-03 | 武汉邮电科学研究院有限公司 | 片上集成石墨烯二氧化硅光波导饱和吸收体及制备方法 |
CN111223955B (zh) * | 2019-10-31 | 2021-11-26 | 北京邮电大学 | 一种具有微孔的波导耦合结构的光探测器 |
CN110931628A (zh) * | 2019-11-14 | 2020-03-27 | 天津大学 | 一种工作在双波段的超导纳米线单光子探测器 |
CN113359234B (zh) * | 2020-03-02 | 2023-05-16 | 苏州旭创科技有限公司 | 一种模斑变换器及硅光集成芯片 |
JP7294572B2 (ja) * | 2020-03-02 | 2023-06-20 | 住友電工デバイス・イノベーション株式会社 | 光導波路型受光素子 |
CN111679364B (zh) * | 2020-06-02 | 2021-07-27 | 中国科学院上海微***与信息技术研究所 | 一种应用于中红外波段的悬空型边缘耦合器 |
CN112180504B (zh) * | 2020-09-29 | 2023-11-14 | 中国科学院物理研究所 | 一种悬浮波导结构及其制备方法 |
CN112285828A (zh) * | 2020-09-30 | 2021-01-29 | 中国科学院微电子研究所 | 一种端面耦合器及其封装方法、应用 |
CN112786717B (zh) * | 2021-01-11 | 2022-06-28 | 北京工业大学 | 一种微环耦合多通道集成光电探测器 |
KR20220114741A (ko) * | 2021-02-09 | 2022-08-17 | 에스케이하이닉스 주식회사 | 단일 광자 애벌런치 다이오드 |
CN112993065A (zh) * | 2021-03-30 | 2021-06-18 | 华中科技大学 | 一种基于Bragg光栅和横向波导结构的雪崩光电探测器 |
CN115877509A (zh) * | 2021-09-28 | 2023-03-31 | 苏州极刻光核科技有限公司 | 模斑转换结构和光子器件 |
CN114397730A (zh) * | 2022-01-26 | 2022-04-26 | 北京邮电大学 | 一种用于波导耦合的双悬臂倒锥模斑转换结构 |
CN115656975B (zh) * | 2022-12-14 | 2023-05-23 | 深圳市速腾聚创科技有限公司 | 波导转换芯片、调频连续波激光雷达及自动驾驶设备 |
Citations (4)
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CN201885758U (zh) * | 2010-11-19 | 2011-06-29 | 深圳信息职业技术学院 | 一种雪崩光电探测器及光能检测装置 |
CN203241564U (zh) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | 光纤波导模斑转换器及光耦合器 |
CN104025315A (zh) * | 2011-12-29 | 2014-09-03 | 英特尔公司 | 具有低击穿电压的雪崩光电二极管 |
US9246045B2 (en) * | 2013-12-13 | 2016-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for fabricating a photodetector |
Family Cites Families (1)
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WO2013066325A1 (en) * | 2011-11-02 | 2013-05-10 | Intel Corporation | Waveguide avalanche photodetectors |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN201885758U (zh) * | 2010-11-19 | 2011-06-29 | 深圳信息职业技术学院 | 一种雪崩光电探测器及光能检测装置 |
CN104025315A (zh) * | 2011-12-29 | 2014-09-03 | 英特尔公司 | 具有低击穿电压的雪崩光电二极管 |
CN203241564U (zh) * | 2013-05-30 | 2013-10-16 | 青岛海信宽带多媒体技术有限公司 | 光纤波导模斑转换器及光耦合器 |
US9246045B2 (en) * | 2013-12-13 | 2016-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for fabricating a photodetector |
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