CN105675051A - Method for manufacturing sensor integrated circuit and integrated circuit manufactured with the method - Google Patents
Method for manufacturing sensor integrated circuit and integrated circuit manufactured with the method Download PDFInfo
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- CN105675051A CN105675051A CN201610018737.5A CN201610018737A CN105675051A CN 105675051 A CN105675051 A CN 105675051A CN 201610018737 A CN201610018737 A CN 201610018737A CN 105675051 A CN105675051 A CN 105675051A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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Abstract
The invention provides a method for manufacturing a sensor integrated circuit and an integrated circuit manufactured with the method. The method comprises the following steps: step 1, manufacturing a temperature and humidity sensor integrated circuit on a first substrate silicon chip, and manufacturing a first metal aluminum wire connected with the temperature and humidity sensor integrated circuit on the first substrate silicon chip; step 2, manufacturing a second substrate silicon chip on the first substrate silicon chip, manufacturing an infrared and visible light brightness sensor on the second substrate silicon chip, and arranging a second metal aluminum wire, which is connected with the infrared and visible light brightness sensor, on the side of the second substrate silicon chip that faces the first substrate silicon chip; step 3, connecting the infrared and visible light brightness sensor with the temperature and humidity sensor integrated circuit; and step 4, packaging the component. The method has the following beneficial effects: a temperature and humidity sensor and the infrared and visible light brightness sensor can be integrated into a single component, so that the size, power consumption and manufacturing cost are reduced, and the measurement precision is improved.
Description
Technical field
The present invention relates to a kind of a kind of method that method manufacturing sensor IC, particularly temperature, humidity and optical pickocff are simultaneously fabricated into single IC for both and the integrated circuit using the method to manufacture.
Background technology
When temperature sensor integrated circuit and humidity sensor integrated circuit are respectively present many, independent infrared light and visible ray luminance sensor integrated circuit also have existence. Their manufacture method also has Patents declare or authorize respectively. But, when measuring humiture and infrared light and visible ray brightness when needs, people generally use and are integrated into above-mentioned several integrated circuits in the system of a circuit board to realize, and therefore volume is big, and cost is high, and power consumption is big simultaneously. A kind of manufacture method that humiture and infrared light and visible ray luminance sensor are gathered together simultaneously of invention, humiture and infrared light and visible ray luminance sensor is made to become a single product, temperature can be measured simultaneously, humidity and infrared light and visible ray brightness, reduce the volume of device, power consumption and manufacturing cost. Meanwhile, because the measurement sensitivity of humiture and infrared light and visible ray brightness is interrelated, so when synchronizing the data obtaining humiture and infrared light and visible ray, measurement can obtain effective compensation, and measurement result is more accurate.
Temperature, humidity and brightness are as most basic physical parameter, closely bound up with the live and work environmental amenity degree of people. In recent years, along with the development in wearable device market, it is desirable to these wearable devices and can measure temperature humidity and the brightness of environment. Such as, measure in real time humiture can so that Consumer's Experience environmental amenity degree, thus judging plan of travel. Again such as, the screen display brightness of instrument and equipment, it is possible to be automatically adjusted according to real-time environmental light brightness so that human body is more comfortable to the brightness sensation of screen. For another example, infrared light transducer[sensor can detect the infrared signal that human body reflects, thus the distance of judgment device and human body.But, present Temperature Humidity Sensor and infrared light and visible ray luminance sensor can not integrated together with so that can only adopting two or three integrated circuits in the application, therefore equipment volume is relatively big, and power consumption is many, and cost is high. Therefore, wearable device needs one can meet product and the manufacture method of volume, power consumption and cost requirement.
The such as patent application of application number 201310117713.1, is the method about a separately fabricated humidity sensor integrated circuit.
The patent application of such as application number 201510608600 again, is the manufacture method about a Temperature Humidity Sensor measuring temperature and humidity simultaneously.
The patent application of such as application number 201410351826.2 again, is the method for manufacturing integrated circuit about infrared light measuring sensor.
This patent is about different sensor integration manufacture methods in single encapsulation such as temperature, humidity sensor and infrared light and visible ray luminance sensors.
Summary of the invention
For defect of the prior art, it is an object of the invention to provide a kind of method of manufacture sensor IC in single encapsulation by temperature-humidity sensor and the different sensor integration such as infrared light and visible ray luminance sensor and the integrated circuit using the method to manufacture.
For solving above-mentioned technical problem, the present invention provides a kind of method manufacturing sensor IC, comprises the steps:
Step 1, manufactures Temperature Humidity Sensor integrated circuit on the first silicon substrate, manufactures the first metallic aluminium wiring being connected with described Temperature Humidity Sensor integrated circuit on described first silicon substrate;
Step 2, described first silicon substrate manufactures the second silicon substrate, described second silicon substrate manufactures infrared light and visible ray luminance sensor, is provided with, towards the side of described first silicon substrate, the second metallic aluminium being connected with described infrared light and visible ray luminance sensor at described second silicon substrate and connects up;
Step 3, connects described infrared light and visible ray luminance sensor and described Temperature Humidity Sensor integrated circuit;
Step 4, encapsulation.
Preferably, described step 2 includes:
Step 2.1, manufactures the first diode, the second diode, the 3rd diode, the 4th diode and the 5th diode by the method for ion implanting and High temperature diffusion in described second silicon substrate;
Step 2.2, deposits the first electricity isolated layer on the surface of described second silicon substrate by plasma enhanced chemical vapor deposition method;
Step 2.3, carves the first contact hole by photoetching and dry etching method on described first electricity isolated layer, and described first contact hole runs through described first electricity isolated layer;
Step 2.4, by chemical vapor deposition tungsten in described first contact hole, described tungsten is connected with described first diode, described second diode, described 3rd diode, described 4th diode and described 5th diode;
Step 2.5, by physical vaporous deposition splash-proofing sputtering metal aluminum line on described first electricity isolated layer, described metallic aluminium line is connected with described tungsten;
Step 2.6, arranges HONGGUANG filtration membrane by the method being coated with photoetching on described first electricity isolated layer, and the position of described HONGGUANG filtration membrane is corresponding with described 3rd diode;
Step 2.7, arranges gold-tinted filtration membrane by the method being coated with photoetching on described first electricity isolated layer, and the position of described gold-tinted filtration membrane is corresponding with described second diode;
Step 2.8, arranges blue light filtration membrane by the method being coated with photoetching on described first electricity isolated layer, and the position of described blue light filtration membrane is corresponding with described first diode;
Step 2.9, depositing the second electricity isolated layer by plasma enhanced chemical vapor deposition method on described first electricity isolated layer, described second electricity isolated layer wraps up described metallic aluminium line, described HONGGUANG filtration membrane, described gold-tinted filtration membrane and described blue light filtration membrane;
Step 2.10, arranging infrared Absorption thin film by the method for physical vaporous deposition sputtering and photoetching on described second electricity isolated layer, the position of described infrared Absorption thin film is corresponding with described first diode, described second diode, described 3rd diode and described 4th diode;
Step 2.11, dielectric layer deposited on described second electricity isolated layer, described dielectric layer wraps up described infrared Absorption thin film.
Preferably, the thickness of described first electricity isolated layer and described second electricity isolated layer is 1 micron.
Preferably, the material of described first electricity isolated layer and described second electricity isolated layer is silicon dioxide.
Preferably, the thickness of described HONGGUANG filtration membrane is 0.5 micron～1.0 microns, and the HONGGUANG that described HONGGUANG filtration membrane allows spectral wavelength to be 610 nanometers～760 nanometers is passed through;
The thickness of described gold-tinted filtration membrane is 0.5 micron～1.0 microns, and the gold-tinted that described gold-tinted filtration membrane allows spectral wavelength to be 490 nanometers～570 nanometers passes through;
The thickness of described blue light filtration membrane is 0.5 micron～1.0 microns, and the blue light that described blue light filtration membrane allows spectral wavelength to be 450 nanometers～480 nanometers passes through.
Preferably, described infrared Absorption film absorption wavelength is the infrared spectral light beam of 760 nanometers～30000 nanometers.
Preferably, described step 3 includes:
Step 3.1, arranges through hole on described second silicon substrate, and described through hole runs through described first electricity isolated layer and described second silicon substrate;
Step 3.2, filler metal copper in described through hole, the two ends of described metallic copper are connected with described metallic aluminium line and described second metallic aluminium wiring respectively;
Step 3.3, the poly-uncommon imine layer of coating on described first silicon substrate, the described described first metallic aluminium wiring of poly-uncommon imine layer parcel, described poly-uncommon imine layer is provided with the second contact hole, described metal ball is set in described second contact hole;
Step 3.4, connects described first metallic aluminium wiring and described second metallic aluminium wiring by described metal ball.
Preferably, the thickness of described dielectric layer is 1.0 microns
Preferably, the thickness of described second silicon substrate is 100 microns.
Integrated circuit, described integrated circuit adopts the method manufacture manufacturing sensor IC.
Compared with prior art, beneficial effects of the present invention is as follows:
1) temperature-humidity sensor and infrared light and visible ray luminance sensor set can be manufactured in together, become a single device, reduce volume, power consumption and manufacturing cost, improve the precision measured; Volume is little: weld two panels silicon chip at waferlevel level so that its volume substantially can be used alone Temperature Humidity Sensor and infrared light than other and visible light sensor system is little; Cost is low: using two panels silicon chip to manufacture Temperature Humidity Sensor and infrared light and visible light sensor respectively, then utilize the metal welding techniques of TSV substrate through vias to integrate, its yield rate can significantly improve so that it is cost can reduce; Low in energy consumption: can substantially to reduce the power consumption of sensor; Precision is high: measure temperature and humidity simultaneously, and infrared light and visible ray brightness, it is possible to do the compensation of temperature and humidity so that measuring humidity, infrared light and visible ray brightness are more accurate;
2) although three kinds of visible ray filtration membranes can effectively absorb three kinds of visible rays except corresponding color, but infrared light generally can not effectively be absorbed so that infrared light can arrive three corresponding visible ray photodiodes, causes measurement error and noise. The application of infrared Absorption thin film can stop that infrared spectrum enters visible ray diode below, thus being effectively improved the certainty of measurement of visible ray; Although there is no visible ray filter membrane on the 4th diode, but because there being infrared Absorption thin film, so the 4th diode can measure the luminance signal of the total visible light spectrum except infrared light; Because both there is no visible ray filtration membrane on the 5th diode, also without infrared Absorption thin film, so the 5th diode can measure the luminance signal of the full spectrum including infrared light and visible ray;
3) five photodiodes are due to the difference of locations of structures and light filtration membrane, it is possible to provide different measurement signals, by analyzing these signals, it is possible to measure infrared light more accurately, it is seen that the brightness of light.
Accompanying drawing explanation
By reading detailed description non-limiting example made with reference to the following drawings, the further feature purpose of the present invention and advantage will become more apparent upon.
Fig. 1 is the method schematic diagram one that the present invention manufactures sensor IC;
Fig. 2 is the method schematic diagram two that the present invention manufactures sensor IC;
Fig. 3 is the method schematic diagram three that the present invention manufactures sensor IC;
Fig. 4 is the method schematic diagram four that the present invention manufactures sensor IC;
Fig. 5 is the method schematic diagram five that the present invention manufactures sensor IC;
Fig. 6 is the method schematic diagram six that the present invention manufactures sensor IC;
Fig. 7 is the method schematic diagram seven that the present invention manufactures sensor IC.
In figure:
The poly-uncommon imine layer of 1-the first silicon substrate 2-the first metallic aluminium wiring 3-
4-the second silicon substrate 5-the first diode 6-the second diode
7-the 3rd diode 8-the 4th diode 9-the 5th diode
10-the first electricity isolated layer 11-the first contact hole 12-metallic aluminium line
13-tungsten 14-HONGGUANG filtration membrane 15-the second electricity isolated layer
16-gold-tinted filtration membrane 17-blue light filtration membrane 18-infrared Absorption thin film
19-dielectric layer 20-through hole 21-the second metallic aluminium connects up
22-metal ball
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail. Following example will assist in those skilled in the art and are further appreciated by the present invention, but do not limit the present invention in any form. It should be pointed out that, to those skilled in the art, without departing from the inventive concept of the premise, it is also possible to make some changes and improvements. These broadly fall into protection scope of the present invention.
As shown in Fig. 1～Fig. 7, the present invention manufactures the method for sensor IC, comprise the steps: first to produce Temperature Humidity Sensor integrated circuit at the first silicon substrate 1, a part for its top first metallic aluminium wiring 2 is exposed out, simultaneously at the poly-uncommon imine layer 3 of exposed metallic aluminium coated thereon, the second contact hole (not shown) is carved above with photoetching method at poly-uncommon imine layer 3, metal ball 22 is welded again in the second contact hole (not shown), prepare for being connected to infrared light on the second silicon substrate 4 and visible ray luminance sensor.
Manufacture infrared light and visible ray luminance sensor at the second silicon substrate 4, specifically comprise the following steps that
The manufacture of infrared light and visible ray luminance sensor is from the second silicon substrate 4.The method of ion implanting and High temperature diffusion of first passing through manufacture on the second silicon substrate 4 first diode the 5, second diode the 6, the 3rd 2 pole 7 of five PN junctions manage, the 4th diode 8 and the 5th diode 9, form five opto-electronic conversion diodes. Five PN junction diode are as the photovoltaic converter of five kinds of spectrum, respectively HONGGUANG, gold-tinted, blue light, infrared light and full spectrum light electricity converter.
Depositing layer of silicon dioxide as the first electricity isolated layer 10 by PECVD (PLASMAENHANCEDCHEMICALVAPORDEPOSITION, plasma enhanced chemical vapor deposition method) technique, thickness is 1 micron.
First electricity isolated layer 10 of silicon dioxide carves the first contact hole 11 by photoetching and dry etching method.
Deposit on the first contact hole 11 by CVD (CHEMICALVAPORDEPOSITION, chemical vapour deposition technique) technique and fill up tungsten 13, as the connection of PN junction diode Yu upper strata metallic aluminium line 12.
With PVD (PHYSICALVAPORDEPOSITION, physical vaporous deposition) method that sputters is at the surface deposition metallic aluminium of silicon dioxide the first electricity isolated layer 10, and by the method etching line of photoetching, form metallic aluminium line 12, the ten of five PN junctions electrodes are connected out by the tungsten 13 in the first contact hole 11.
Method in the coating of the surface of silicon dioxide the first electricity isolated layer 10 and photoetching makes HONGGUANG filtration membrane 14. This film thickness is 0.5 micron～1.0 microns, it is possible to the HONGGUANG allowing spectral wavelength be 610 nanometers～760 nanometers is passed through, and arrives the 3rd corresponding below diode 7, simultaneously the effective visible ray absorbing other wavelength.
Method in the coating of the surface of silicon dioxide the first electricity isolated layer 10 and photoetching makes gold-tinted filtration membrane 16. This film thickness is 0.5 micron～1.0 microns, it is possible to the gold-tinted allowing spectral wavelength be 490 nanometers～570 nanometers passes through, and arrives the second corresponding below diode 6, simultaneously the effective visible ray absorbing other wavelength.
Method in the coating of the surface of silicon dioxide the first electricity isolated layer 10 and photoetching makes blue light filtration membrane 17. This film thickness is 0.5 micron～1.0 microns, it is possible to the blue light allowing spectral wavelength be 450 nanometers～480 nanometers passes through, and arrives the first corresponding below diode 5, simultaneously the effective visible ray absorbing other wavelength.
Depositing second layer silicon dioxide the second electricity isolated layer 15 by PECVD (PLASMAENHANCEDCHEMICALVAPORDEPOSITION, plasma enhanced chemical vapor deposition method) technique, thickness is 1.0 microns.
Sputter the method with photoetching at this second electricity isolated layer 15 above with PVD (PHYSICALVAPORDEPOSITION, physical vaporous deposition) and make infrared Absorption thin film 18. Infrared Absorption thin film 18 is alternately made up of the medium of two kinds of differing dielectric constants of multilamellar, it is made absorbing wavelength to be effectively the infrared spectral light beam of 760 nanometers～30000 nanometers by the principle of optical interference so that it is first diode the 5, second diode the 6, the 3rd 2 pole 7 that can not arrive bottom is managed and the 4th diode 8.
On infrared Absorption thin film 18, deposit the dielectric layer 19 that a layer thickness is 1.0 microns again, protect infrared Absorption thin film 18.
Second silicon substrate 4 is thinned to the thickness of 100 microns by the method ground by polished backside.
The TSV substrate through vias 20 of metallic aluminium is etched by the method for photoetching and etching, metallic aluminium thin film is deposited at the second silicon substrate 4 by the method for PVD, photoetching and dry etching is utilized to carve the back side the second metallic aluminium wiring 21, in TSV substrate through vias 20, filler metal copper, to connect metallic aluminium line 12 and the second metallic aluminium wiring 21 at its two ends, prepares to be connected with the metal ball 22 of the Temperature Humidity Sensor integrated circuit on the first silicon substrate 1 simultaneously.
Couple together with the second metallic aluminium wiring 21 of the outer light on the first metallic aluminium wiring 2 of the Temperature Humidity Sensor chip on 22 the first silicon substrates 1 of metal ball and the second silicon substrate 4 and visible ray luminance sensor, it is encapsulated in again in an integrated antenna package, thus completing the manufacture of this chip.
Present invention also offers a kind of integrated circuit adopting the method manufacturing sensor IC to manufacture.
Above specific embodiments of the invention are described. It is to be appreciated that the invention is not limited in above-mentioned particular implementation, those skilled in the art can make a variety of changes within the scope of the claims or revise, and this has no effect on the flesh and blood of the present invention. When not conflicting, embodiments herein and the feature in embodiment can arbitrarily be mutually combined.
Claims (10)
1. the method manufacturing sensor IC, it is characterised in that comprise the steps:
Step 1, manufactures Temperature Humidity Sensor integrated circuit on the first silicon substrate, manufactures the first metallic aluminium wiring being connected with described Temperature Humidity Sensor integrated circuit on described first silicon substrate;
Step 2, described first silicon substrate manufactures the second silicon substrate, described second silicon substrate manufactures infrared light and visible ray luminance sensor, is provided with, towards the side of described first silicon substrate, the second metallic aluminium being connected with described infrared light and visible ray luminance sensor at described second silicon substrate and connects up;
Step 3, connects described infrared light and visible ray luminance sensor and described Temperature Humidity Sensor integrated circuit;
Step 4, encapsulation.
2. the method for manufacture sensor IC according to claim 1, it is characterised in that described step 2 includes:
Step 2.1, manufactures the first diode, the second diode, the 3rd diode, the 4th diode and the 5th diode by the method for ion implanting and High temperature diffusion in described second silicon substrate;
Step 2.2, deposits the first electricity isolated layer on the surface of described second silicon substrate by plasma enhanced chemical vapor deposition method;
Step 2.3, carves the first contact hole by photoetching and dry etching method on described first electricity isolated layer, and described first contact hole runs through described first electricity isolated layer;
Step 2.4, by chemical vapor deposition tungsten in described first contact hole, described tungsten is connected with described first diode, described second diode, described 3rd diode, described 4th diode and described 5th diode;
Step 2.5, by physical vaporous deposition splash-proofing sputtering metal aluminum line on described first electricity isolated layer, described metallic aluminium line is connected with described tungsten;
Step 2.6, arranges HONGGUANG filtration membrane by the method being coated with photoetching on described first electricity isolated layer, and the position of described HONGGUANG filtration membrane is corresponding with described 3rd diode;
Step 2.7, arranges gold-tinted filtration membrane by the method being coated with photoetching on described first electricity isolated layer, and the position of described gold-tinted filtration membrane is corresponding with described second diode;
Step 2.8, arranges blue light filtration membrane by the method being coated with photoetching on described first electricity isolated layer, and the position of described blue light filtration membrane is corresponding with described first diode;
Step 2.9, depositing the second electricity isolated layer by plasma enhanced chemical vapor deposition method on described first electricity isolated layer, described second electricity isolated layer wraps up described metallic aluminium line, described HONGGUANG filtration membrane, described gold-tinted filtration membrane and described blue light filtration membrane;
Step 2.10, arranging infrared Absorption thin film by the method for physical vaporous deposition sputtering and photoetching on described second electricity isolated layer, the position of described infrared Absorption thin film is corresponding with described first diode, described second diode, described 3rd diode and described 4th diode;
Step 2.11, dielectric layer deposited on described second electricity isolated layer, described dielectric layer wraps up described infrared Absorption thin film.
3. the method for manufacture sensor IC according to claim 2, it is characterised in that the thickness of described first electricity isolated layer and described second electricity isolated layer is 1 micron.
4. the method manufacturing sensor IC according to Claims 2 or 3, it is characterised in that the material of described first electricity isolated layer and described second electricity isolated layer is silicon dioxide.
5. the method for manufacture sensor IC according to claim 2, it is characterised in that the thickness of described HONGGUANG filtration membrane is 0.5 micron～1.0 microns, the HONGGUANG that described HONGGUANG filtration membrane allows spectral wavelength to be 610 nanometers～760 nanometers is passed through;
The thickness of described gold-tinted filtration membrane is 0.5 micron～1.0 microns, and the gold-tinted that described gold-tinted filtration membrane allows spectral wavelength to be 490 nanometers～570 nanometers passes through;
The thickness of described blue light filtration membrane is 0.5 micron～1.0 microns, and the blue light that described blue light filtration membrane allows spectral wavelength to be 450 nanometers～480 nanometers passes through.
6. the method for manufacture sensor IC according to claim 2, it is characterised in that described infrared Absorption film absorption wavelength is the infrared spectral light beam of 760 nanometers～30000 nanometers.
7. the method for manufacture sensor IC according to claim 1, it is characterised in that described step 3 includes:
Step 3.1, arranges through hole on described second silicon substrate, and described through hole runs through described first electricity isolated layer and described second silicon substrate;
Step 3.2, filler metal copper in described through hole, the two ends of described metallic copper are connected with described metallic aluminium line and described second metallic aluminium wiring respectively;
Step 3.3, the poly-uncommon imine layer of coating on described first silicon substrate, the described described first metallic aluminium wiring of poly-uncommon imine layer parcel, described poly-uncommon imine layer is provided with the second contact hole, described metal ball is set in described second contact hole;
Step 3.4, connects described first metallic aluminium wiring and described second metallic aluminium wiring by described metal ball.
8. the method for manufacture sensor IC according to claim 2, it is characterised in that the thickness of described dielectric layer is 1.0 microns.
9. the method manufacturing sensor IC according to claim 1,2 or 7, it is characterised in that the thickness of described second silicon substrate is 100 microns.
10. integrated circuit, it is characterised in that described integrated circuit adopts the method manufacture manufacturing sensor IC described in claim 1 to 9 any one.
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| CN105675051B (en) | 2018-06-05 |
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