CN105671490B - Zirconium gemstone cutting and zirconium jewel - Google Patents

Zirconium gemstone cutting and zirconium jewel Download PDF

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CN105671490B
CN105671490B CN201610141491.0A CN201610141491A CN105671490B CN 105671490 B CN105671490 B CN 105671490B CN 201610141491 A CN201610141491 A CN 201610141491A CN 105671490 B CN105671490 B CN 105671490B
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zirconium
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CN105671490A (en
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葛文志
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Zhejiang Modern Medice Optoelectronics Co Ltd
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Zhejiang Modern Medice Optoelectronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D

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  • Engineering & Computer Science (AREA)
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Abstract

The present invention relates to a kind of zirconium gemstone cutting and zirconium jewels.It solves the problems such as prior art design is unreasonable.This zirconium gemstone cutting includes the following steps：A, it stocks up：Prepare zirconium gem body, ZrO2 materials, SiO2 materials and AF materials；B, it vacuumizes：Zirconium gem body is put into plated film cavity umbrella stand, shutdown vacuumizes, then rotational workpieces disk, is vacuumized at normal temperatures in plated film cavity and the vacuum degree being evacuated in plated film cavity in rear plated film cavity is 8.0E 4Pa；C, coating：ZrO2 materials, SiO2 materials and AF materials are respectively put into corresponding evaporation source, evaporation source is connected to plated film cavity, and ZrO2 materials, SiO2 materials and AF materials are plated on zirconium gem body by evaporation technology by corresponding evaporation source successively respectively.D, feeding：Enter gas enabling, obtained zirconium jewel finished product is taken out.The advantage of the invention is that：It is highly practical.

Description

Zirconium gemstone cutting and zirconium jewel
Technical field
The invention belongs to lapidary techniques field more particularly to a kind of zirconium gemstone cuttings and zirconium jewel.
Background technology
Currently, more on existing multimedia device can be arranged some touch controlled keys.Touch controlled key includes unlocked by fingerprint key etc. Deng.Existing unlocked by fingerprint key, when operation, will produce fingerprint, booty and trace etc. on unlocked by fingerprint key, secondly, scratch resistance Ability is relatively low, and service life is shorter and poor practicability.
Its publication number of Chinese patent CN102707356A discloses a kind of production method of colored filter, colored filter And display device, it is related to display field.The production method of the colored filter, including：Obtain a colorized optical filtering chip base Plate；One layer of first photosensitive material is coated on colored filter substrate, forms the coating of the first photosensitive material；In the first photosensitive material The second photosensitive material is coated on the coating of material, forms the coating of the second photosensitive material；To the institute on the colored filter substrate The coating of the coating, second photosensitive material of stating the first photosensitive material is exposed, develops, in the colored filter substrate Upper formation spacer material；The spacer material is step structure, and the width got out of a predicament or an embarrassing situation that first photosensitive material is formed is more than The width for the top bar that second photosensitive material is formed.
As can be seen that the optical filter of above-mentioned patent can improve the stability of the display effect of display device.
But above-mentioned scheme fails to solve above-mentioned technical problem, in addition, its is complicated and be not easy to manufacture, reflects Rate is poor.
Invention content
Regarding the issue above, the present invention provides one kind can improve refractive index and prolong the service life, it is practical The stronger silicon-controlled safety control circuit of property.
Another object of the present invention is in view of the above-mentioned problems, providing silicon-controlled peace a kind of simple in structure and more practical Full control circuit.
In order to achieve the above objectives, present invention employs following technical proposals：This zirconium gemstone cutting includes the following steps：
A, it stocks up：Prepare zirconium gem body, ZrO2 materials, SiO2 materials and AF materials；
B, it vacuumizes：Zirconium gem body is put into plated film cavity umbrella stand, shutdown vacuumizes, then rotational workpieces disk, plating It is vacuumized at normal temperatures in membrane cavity body and the vacuum degree being evacuated in plated film cavity in rear plated film cavity is 8.0E-4Pa；Workpiece Disk is arranged in plated film cavity umbrella stand and is connect with rotary drive mechanism.Rotary drive mechanism is that automation drives.
C, coating：ZrO2 materials, SiO2 materials and AF materials are respectively put into corresponding evaporation source, evaporation source and plated film Cavity is connected to, and ZrO2 materials, SiO2 materials and AF materials are plated in zirconium treasured by corresponding evaporation source successively by evaporation technology respectively On stone ontology, that is, form ZrO2 material film platings layer, SiO2 material film platings layer and AF material film plating layers, system on zirconium gem body Obtain zirconium jewel finished product；It can make structure more provided with ZrO2 material film platings layer, SiO2 material film platings layer and AF material film platings layer It is compact, meanwhile, further improve strong degree and antifouling capacity.
The specific vaporization process conditions of ZrO2 material film plating layers are：ZrO2 materials are 8.0E-4Pa's in room temperature and vacuum degree Under the conditions of, logical rate isIt is evaporated, evaporation time 40-60s；
The specific vaporization process conditions of SiO2 material film plating layers are：SiO2 materials are 8.0E-4Pa's in room temperature and vacuum degree Under the conditions of, logical rate isIt is evaporated, evaporation time 90-110s；
The specific vaporization process conditions of AF material film plating layers are：AF materials are in the condition that room temperature and vacuum degree are 8.0E-4Pa Under, logical rate isIt is evaporated, evaporation time 20-40s.For length unit：Angstrom；S is chronomere second.
D, feeding：Enter gas enabling, obtained zirconium jewel finished product is taken out.
It can be had the following advantages by above-mentioned technique：
Fingerprint, booty, trace are not will produce when 1, operating；
When 2, appearing in surface if there is dust, booty, trace, it is easy to wiped clean；
3, with extremely strong scratch resistance effect, Mohs' hardness is up to 9H.
4, light penetration, transmitance T >=98% or more, brightness enhancing, imaging clearly are improved.
In above-mentioned zirconium gemstone cutting, in above-mentioned step A, the ZrO2 materials, SiO2 materials and AF Material is in solid-state structure.
Prioritization scheme in above-mentioned step C, is formed in above-mentioned zirconium gemstone cutting on zirconium gem body It is spaced 1min after ZrO2 material film plating layers and then forms SiO2 material film plating layers, the plating of ZrO2 materials on ZrO2 material film plating layers again After forming SiO2 material film plating layers in film layer then interval 1min forms AF material film plating layers in SiO2 material film plating layers again.
In above-mentioned zirconium gemstone cutting, in above-mentioned step C, when by ZrO2 materials, SiO2 materials and AF materials After material is respectively put into corresponding evaporation source, corresponding electron gun in the evaporation source strike ZrO2 materials, SiO2 materials and AF materials make to be changed into liquid ZrO2 materials, liquid in solid ZrO2 materials, SiO2 materials and AF materials by evaporation source SiO2 materials and liquid AF materials, are then changed into gaseous state ZrO2 materials, gaseous state SiO2 materials and gaseous state AF materials, subsequently again It is changed into liquid ZrO2 materials, liquid Si O2 materials and liquid AF materials, is finally changed into the ZrO2 being plated on zirconium gem body Material film plating layer, SiO2 material film platings layer and AF material film plating layers.
In above-mentioned zirconium gemstone cutting, in above-mentioned step C, the ZrO2 material film plating layer thickness is
In above-mentioned zirconium gemstone cutting, in above-mentioned step C, the SiO2 material film plating layer thickness is
In above-mentioned zirconium gemstone cutting, in above-mentioned step C, the AF material film plating layer thickness is
In above-mentioned zirconium gemstone cutting, in above-mentioned step C,
The specific vaporization process conditions of ZrO2 material film plating layers are：ZrO2 materials are 8.0E-4Pa's in room temperature and vacuum degree Under the conditions of, logical rate isIt is evaporated, evaporation time 50s；
The specific vaporization process conditions of SiO2 material film plating layers are：SiO2 materials are 8.0E-4Pa's in room temperature and vacuum degree Under the conditions of, logical rate isIt is evaporated, evaporation time 100s；
The specific vaporization process conditions of AF material film plating layers are：AF materials are in the condition that room temperature and vacuum degree are 8.0E-4Pa Under, logical rate isIt is evaporated, evaporation time 30s.
This zirconium jewel includes zirconium gem body, ZrO2 material film plating layers is equipped in the one side of zirconium gem body, in ZrO2 materials Expect that one side of the film plating layer far from zirconium gem body is equipped with SiO2 material film plating layers, is plated far from ZrO2 materials in SiO2 material film platings layer The one side of film layer is equipped with AF material film plating layers
In above-mentioned zirconium jewel,
In above-mentioned zirconium gemstone cutting, the SiO2 material film plating layer thickness is less than SiO2 material film plating layers Thickness, the SiO2 material film plating layer thickness are less than the thickness of AF material film plating layers.
Compared with prior art, the advantages of this zirconium gemstone cutting, is：1, it is more reasonable to design, simple in structure and easy In processing and manufacturing.2, simple for process and be easily manipulated, the scope of application and practicability of product greatly improved.It will not be produced when operation Raw fingerprint, booty, trace；When appearing in surface if there is dust, booty, trace, it is easy to wiped clean；3, with extremely strong Scratch resistance effect.
Description of the drawings
Fig. 1 is structural schematic diagram provided by the invention.
In figure, zirconium gem body 1, ZrO2 material film platings layer 2, SiO2 material film platings layer 3, AF material film platings layer 4.
Specific implementation mode
Below be invention specific embodiment and in conjunction with attached drawing, technical scheme of the present invention will be further described, but Invention is not limited to these embodiments.
Embodiment one
As shown in Figure 1, this zirconium gemstone cutting includes the following steps：
A, it stocks up：Prepare zirconium gem body 1, ZrO2 materials, SiO2 materials and AF materials；
B, it vacuumizes：Zirconium gem body 1 is put into plated film cavity umbrella stand, shutdown vacuumizes, then rotational workpieces disk, plating It is vacuumized at normal temperatures in membrane cavity body and the vacuum degree being evacuated in plated film cavity in rear plated film cavity is 8.0E-4Pa；
C, coating：ZrO2 materials, SiO2 materials and AF materials are respectively put into corresponding evaporation source, evaporation source and plated film Cavity is connected to, and ZrO2 materials, SiO2 materials and AF materials are plated in zirconium treasured by corresponding evaporation source successively by evaporation technology respectively On stone ontology 1, that is, form ZrO2 material film platings layer 2, SiO2 material film platings layer 3 and AF material film plating layers on zirconium gem body 1 4, zirconium jewel finished product is made；
The specific vaporization process conditions of ZrO2 material film platings layer 2 are：ZrO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 40-60s；
The specific vaporization process conditions of SiO2 material film platings layer 3 are：SiO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 90-110s；
The specific vaporization process conditions of AF material film platings layer 4 are：AF materials are in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 20-40s.
D, feeding：Enter gas enabling, obtained zirconium jewel finished product is taken out.
In above-mentioned step A, the ZrO2 materials, SiO2 materials and AF materials are in solid-state structure.
In above-mentioned step C, after forming ZrO2 material film platings layer 2 on zirconium gem body 1 then interval 1min exists again SiO2 material film platings layer 3 is formed on ZrO2 material film platings layer 2, between being formed after SiO2 material film platings layer 3 on ZrO2 material film platings layer 2 Every 1min then AF material film platings layer 4 is formed in SiO2 material film platings layer 3 again.Further, in above-mentioned step C, as general After ZrO2 materials, SiO2 materials and AF materials are respectively put into corresponding evaporation source, the corresponding electron gun in evaporation source hits institute ZrO2 materials, SiO2 materials and the AF materials stated make to be in solid ZrO2 materials, SiO2 materials and AF materials by evaporation source It is changed into liquid ZrO2 materials, liquid Si O2 materials and liquid AF materials, is then changed into gaseous state ZrO2 materials, gaseous state SiO2 again Material and gaseous state AF materials, are subsequently changed into liquid ZrO2 materials, liquid Si O2 materials and liquid AF materials, are finally changed into ZrO2 material film platings layer 2, SiO2 material film platings layer 3 and the AF material film platings layer 4 being plated on zirconium gem body 1.
In above-mentioned step C, 2 thickness of ZrO2 material film platings layer is3 thickness of SiO2 material film platings layer For4 thickness of AF material film platings layer is
As the optimization scheme of the present embodiment, in above-mentioned step C,
The specific vaporization process conditions of ZrO2 material film platings layer 2 are：ZrO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 50s；
The specific vaporization process conditions of SiO2 material film platings layer 3 are：SiO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 100s；
The specific vaporization process conditions of AF material film platings layer 4 are：AF materials are in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 30s.
This zirconium jewel includes zirconium gem body 1, ZrO2 material film platings layer 2 is equipped in the one side of zirconium gem body 1, in ZrO2 One side of the material film plating layer 2 far from zirconium gem body 1 is equipped with SiO2 material film platings layer 3, in SiO2 material film platings layer 3 far from ZrO2 The one side of material film plating layer 2 is equipped with AF material film platings layer 4.Further, 3 thickness of SiO2 material film platings layer here is less than SiO2 The thickness of material film plating layer 3,3 thickness of SiO2 material film platings layer are less than the thickness of AF material film platings layer 4.
Embodiment two
The present embodiment is essentially identical with the structure and principle of embodiment one, though therefore not to repeat here, different place It is：
The specific vaporization process conditions of ZrO2 material film platings layer 2 are：ZrO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 40s；
The specific vaporization process conditions of SiO2 material film platings layer 3 are：SiO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 90s；
The specific vaporization process conditions of AF material film platings layer 4 are：AF materials are in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 20s.
Embodiment three
The present embodiment is essentially identical with the structure and principle of embodiment one, though therefore not to repeat here, different place It is：
The specific vaporization process conditions of ZrO2 material film platings layer 2 are：ZrO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 60s；
The specific vaporization process conditions of SiO2 material film platings layer 3 are：SiO2 materials are 8.0E-4Pa in room temperature and vacuum degree Under conditions of, logical rate isIt is evaporated, evaporation time 110s；
The specific vaporization process conditions of AF material film platings layer 4 are：AF materials are in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 40s.
Specific embodiment described herein is only an example for the spirit of the invention.Technology belonging to the present invention is led The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Although zirconium gem body 1, ZrO2 material film platings layer 2, SiO2 material film platings layer 3, AF materials is used more herein Expect the terms such as film plating layer 4, but it does not preclude the possibility of using other terms.The use of these items is only for more easily Describe and explain the essence of the present invention；Being construed as any one of the additional limitations all is disagreed with spirit of that invention 's.

Claims (8)

1. a kind of zirconium gemstone cutting, which is characterized in that this technique includes the following steps：
A, it stocks up：Prepare zirconium gem body (1), ZrO2Material, SiO2Material and AF materials；
B, it vacuumizes：Zirconium gem body (1) is put into plated film cavity umbrella stand, shutdown vacuumizes, then rotational workpieces disk, plated film It is vacuumized at normal temperatures in cavity and the vacuum degree being evacuated in plated film cavity in rear plated film cavity is 8.0E-4Pa；
C, coating：By ZrO2Material, SiO2Material and AF materials are respectively put into corresponding evaporation source, evaporation source and plated film cavity Connection, corresponding evaporation source is respectively by evaporation technology successively by ZrO2Material, SiO2Material and AF materials are plated in zirconium gem body (1) on, that is, form ZrO on zirconium gem body (1)2Material film plating layer (2), SiO2Material film plating layer (3) and AF material film platings Zirconium jewel finished product is made in layer (4)；
ZrO2The specific vaporization process conditions of material film plating layer (2) are：ZrO2Material is in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 40-60s；
SiO2The specific vaporization process conditions of material film plating layer (3) are：SiO2Material is in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 90-110s；
The specific vaporization process conditions of AF material film platings layer (4) are：AF materials are in the condition that room temperature and vacuum degree are 8.0E-4Pa Under, logical rate isIt is evaporated, evaporation time 20-40s；
D, feeding：Enter gas enabling, obtained zirconium jewel finished product is taken out；
In above-mentioned step A, the ZrO2Material, SiO2Material and AF materials are in solid-state structure；
In above-mentioned step C, when by ZrO2Material, SiO2After material and AF materials are respectively put into corresponding evaporation source, evaporation The ZrO described in the strike of corresponding electron gun in source2Material, SiO2Material and AF materials make to be in solid ZrO by evaporation source2 Material, SiO2Material and AF materials are changed into liquid ZrO2Material, liquid Si O2Material and liquid AF materials, are then changed into again Gaseous state ZrO2Material, gaseous state SiO2Material and gaseous state AF materials, are subsequently changed into liquid ZrO2Material, liquid Si O2Material with Liquid AF materials are finally changed into the ZrO being plated on zirconium gem body (1)2Material film plating layer (2), SiO2Material film plating layer (3) With AF material film platings layer (4).
2. zirconium gemstone cutting according to claim 1, which is characterized in that in above-mentioned step C, in zirconium jewel sheet Body forms ZrO on (1)2Material film plating layer (2) is spaced 1min then again in ZrO afterwards2Material film plating layer forms SiO on (2)2Material Film plating layer (3), ZrO2Material film plating layer forms SiO on (2)2Material film plating layer (3) is spaced 1min then again in SiO afterwards2Material plates Film layer (3) forms AF material film platings layer (4).
3. zirconium gemstone cutting according to claim 1, which is characterized in that in above-mentioned step C, the ZrO2 Material film plating layer (2) thickness is
4. zirconium gemstone cutting according to claim 1, which is characterized in that in above-mentioned step C, the SiO2 Material film plating layer (3) thickness is
5. zirconium gemstone cutting according to claim 1, which is characterized in that in above-mentioned step C, the AF materials Expect that film plating layer (4) thickness is
6. zirconium gemstone cutting according to claim 1, which is characterized in that in above-mentioned step C,
ZrO2The specific vaporization process conditions of material film plating layer (2) are：ZrO2Material is in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 50s；
The specific vaporization process conditions of SiO2 material film platings layer (3) are：SiO2Material is in the item that room temperature and vacuum degree are 8.0E-4Pa Under part, logical rate isIt is evaporated, evaporation time 100s；
The specific vaporization process conditions of AF material film platings layer (4) are：AF materials are in the condition that room temperature and vacuum degree are 8.0E-4Pa Under, logical rate isIt is evaporated, evaporation time 30s.
7. zirconium jewel made from a kind of zirconium gemstone cutting using described in claim 1-6 any one, which is characterized in that Including zirconium gem body (1), ZrO is equipped in the one side of zirconium gem body (1)2Material film plating layer (2), in ZrO2Material film plating layer (2) one side far from zirconium gem body (1) is equipped with SiO2Material film plating layer (3), in SiO2Material film plating layer (3) is far from ZrO2Material Expect that the one side of film plating layer (2) is equipped with AF material film platings layer (4).
8. zirconium jewel according to claim 7, which is characterized in that the SiO2Material film plating layer (3) thickness is less than SiO2 The thickness of material film plating layer (3), the SiO2Material film plating layer (3) thickness is less than the thickness of AF material film platings layer (4).
CN201610141491.0A 2016-03-11 2016-03-11 Zirconium gemstone cutting and zirconium jewel Active CN105671490B (en)

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