CN105668570A - Preparation method of silicon wafer cutting edge material - Google Patents
Preparation method of silicon wafer cutting edge material Download PDFInfo
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- CN105668570A CN105668570A CN201610023966.6A CN201610023966A CN105668570A CN 105668570 A CN105668570 A CN 105668570A CN 201610023966 A CN201610023966 A CN 201610023966A CN 105668570 A CN105668570 A CN 105668570A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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Abstract
The invention discloses a preparation method of a silicon wafer cutting edge material. According to the preparation method, a silicon carbide block material is selected and is crushed through a vertical shaft impact crusher, and after sieving, silicon carbide sand with granularity being less than or equal to 4.5 mm is collected; a No.1 grader and a No.2 grader are included; with air flow generated by a draught fan, fine powder obtained after grinding of the material is taken into the No.1 grader to undergo sorting; the material with high granularity falls down under the centrifugal effect of a No.1 grading wheel to be ground again; qualified fine powder enters the No.2 grader with the air flow, and is discharged out of a powder outlet pipe under the centrifugal effect of a No.2 grading wheel, so as to obtain the required granularity; and with the air flow fine powder which hasn't been discharged is discharged through a powder pipe of a micropowder cyclone collector. The preparation method is easy to operate. Yield and quality of the powdery silicon carbide cutting edge material product can be raised, production efficiency is enhanced, and production cost is saved.
Description
Technical field
The present invention relates to cutting blade material technical field, be specifically related to a kind of preparation method of crystal silicon wafer cutting edge material.
Background technology
Be applicable to the silicon carbide micro-powder of crystal-silicon battery slice cutting, from common abrasive material have a lot of different, qualityThere is higher requirement. 1. are the granularities to cutting micro mist, require to distribute very concentrated; 2. line cutting is micro-The forward line degree of powder; 3. the chemical analysis of line cutting micro mist; 4. the bulk density of line cutting micro mist; 5. line cuttingA series of indexs such as surface cleanness have strict requirement. Silicon carbide micro-powder is taking carborundum as raw material,Form through explained hereafter such as fragmentation, sortings, be mainly used in making meticulous emery wheel, oilstone, emery cloth, abrasive bandDeng fine finishining grinding tool, and be widely used in the grinding and polishings such as machine components, electronic component, processing of stone. WithThe development of photovoltaic industry, the high strength, high hard as the carborundum of conventional abrasives due to himselfDegree performance, is used as cutting blade material solar monocrystalline silicon slice and polysilicon chip is carried out to line cutting. At present,Domestic carborundum cutting blade material is produced and is existed crushing effect poor, and distribute wide and productive rate of grain size of micropowder is low etc.Problem. Therefore, be desirable to provide a kind of silicon carbide micro-powder particle diameter and distribute suitably, the carborundum cutting that productive rate is higherThe production method of sword material.
Summary of the invention
The present invention has overcome the deficiencies in the prior art, is provided for processing the measured crystal silicon wafer cutting edge material of matterPreparation method.
Consider the problems referred to above of prior art, according to an aspect of the present invention, for solving above-mentioned technologyProblem, the present invention by the following technical solutions:
A preparation method for crystal silicon wafer cutting edge material, it comprises the following steps:
(1) choose silicon carbide bulk material, broken and sieve by vertical shaft impact crusher, collect granularity≤The carborundum granularity sand of 4.5mm; It comprises 1# grader and 2# grader, and the fine powder after material grinds is with blower fanThe air-flow producing is brought into 1# grader and carries out sorting, the excessively thick thing of granularity under the centrifugal action of 1# grading wheelMaterial fall back to refacing, qualified fine powder enters 2# grader with air-flow, under the centrifugal action of 2# grading wheel through going outTube cell is discharged, and obtains desired particle size, arranges with air-flow without the fine powder of discharging through micro mist cyclone collector tube cellGo out;
(2), under vacuum condition, dry ball milling classification adopts dry-type ball mill classification equipment to above-mentioned carborundumGranularity sand carries out abrasive dust, classification obtains the silicon carbide powder that granularity is 3～8um;
(3), under vacuum condition, described silicon carbide powder is added to the water, and is 25～60KHz in frequencyUnder ultrasonic wave, concussion is processed 15～19 minutes, then passes into settler precipitation 10 minutes, then by settlerTop muddy water is extracted out;
(4) under vacuum condition, introduce overflow grading device, introduce upwards mobile current to overflow cylinder,When water velocity equals particle sinking speed, this particle is detained motionless. Particle diameter is greater than just sinking of this particle,Particle diameter is less than just overflowing with current of this particle. Slip is dropped into overflow cylinder, first goes out particulate with low discharge,Slightly tune up subsequently flow, and change overflow pipe position, can obtain a kind of specification micro mist. When what overflowWhen pulp density is very rare, again tunes up flow and change overflow pipe position, can obtain again a kind of thicker specificationMicro mist. Repeat operation, can separate the micro mist of each granularity, according to different grading requirements, adjustJoint pulp density, carries out overflow size separation; Pass into respectively acid dip pickle according to different-grain diameter again;
(5), under vacuum condition, acid dip pickle adds hydrochloric acid, stirring reaction in the situation that stirring simultaneouslyAfter 12 hours, depickling is to remove metal ion; And then pass in the centrifuge that the concentrated sulfuric acid is housed described dense sulphurMass ratio sour and described silicon carbide powder is 1:30, and then stirring reaction 2 hours, further to remove goldBelong to ion, and slough moisture;
(6) slip after thickening adopts scraper centrifugal machine to classification carries out thickening processing, makes instituteObtain moisture content≤6% of powder;
(7) dry and the powder after thickening is sent into tunnel drying kiln be dried, bake out temperature is 75Degree, makes its moisture content < 0.04%;
(8) mixture is sent the powder of different batches of the same granularity section after drying into dry-mixed machine and is dry mixed 2.1 littleTime;
(9) fine screen, to walk gained powder in the fine screen of ultrasonic vibration sieve, is removed after conglomeration and large granular impurityObtaining crystal silicon wafer cutting edge material, is then 25: 27 and quartz by described crystal silicon wafer cutting edge material according to mass ratioSand mixes;
(10) product obtained above is loaded on there is silica gel, in the casing of activated carbon and zeolite, described siliconThe ratio of glue, activated carbon and zeolite is 5:3:2.
In order to realize better the present invention, further technical scheme is:
According to one embodiment of the invention, described silicon carbide bulk material adopts green silicon carbide.
Compared with prior art, one of beneficial effect of the present invention is:
The preparation method of a kind of crystal silicon wafer cutting edge material of the present invention, by qualified granularity in crushing and grinding processSilicon carbide blade material powder is shunted out, avoids producing a large amount of fine powder waste materials because of overmastication; And canRealize the powder shunting of different grain size scope, removed the function of impurity in powder; Easy operating of the present invention,Can improve yield rate and the quality of carborundum cutting blade material powder product, and enhance productivity, saveProduction cost.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limitIn this.
A preparation method for crystal silicon wafer cutting edge material, it comprises the following steps:
(1) choose silicon carbide bulk material, broken and sieve by vertical shaft impact crusher, collect granularity≤The carborundum granularity sand of 4.5mm; It comprises 1# grader and 2# grader, and the fine powder after material grinds is with blower fanThe air-flow producing is brought into 1# grader and carries out sorting, the excessively thick thing of granularity under the centrifugal action of 1# grading wheelMaterial fall back to refacing, qualified fine powder enters 2# grader with air-flow, under the centrifugal action of 2# grading wheel through going outTube cell is discharged, and obtains desired particle size, arranges with air-flow without the fine powder of discharging through micro mist cyclone collector tube cellGo out;
(2), under vacuum condition, dry ball milling classification adopts dry-type ball mill classification equipment to above-mentioned carborundum grainDegree sand carries out abrasive dust, classification obtains the silicon carbide powder that granularity is 3～8um;
(3), under vacuum condition, described silicon carbide powder is added to the water, and is 25～60KHz in frequencyUnder ultrasonic wave, concussion is processed 15～19 minutes, then passes into settler precipitation 10 minutes, then by settlerTop muddy water is extracted out;
(4) under vacuum condition, introduce overflow grading device, introduce upwards mobile current to overflow cylinder,When water velocity equals particle sinking speed, this particle is detained motionless. Particle diameter is greater than just sinking of this particle,Particle diameter is less than just overflowing with current of this particle. Slip is dropped into overflow cylinder, first goes out particulate with low discharge,Slightly tune up subsequently flow, and change overflow pipe position, can obtain a kind of specification micro mist. When what overflowWhen pulp density is very rare, again tunes up flow and change overflow pipe position, can obtain again a kind of thicker specificationMicro mist. Repeat operation, can separate the micro mist of each granularity, according to different grading requirements, adjustJoint pulp density, carries out overflow size separation; Pass into respectively acid dip pickle according to different-grain diameter again;
(5), under vacuum condition, acid dip pickle adds hydrochloric acid, stirring reaction 12 in the situation that stirring simultaneouslyAfter hour, depickling is to remove metal ion; And then pass in the centrifuge that the concentrated sulfuric acid is housed the described concentrated sulfuric acidWith the mass ratio of described silicon carbide powder be 1:30, and then stirring reaction 2 hours, further to remove metalIon, and slough moisture;
(6) slip after thickening adopts scraper centrifugal machine to classification carries out thickening processing, makes gainedMoisture content≤6% of powder;
(7) dry and the powder after thickening is sent into tunnel drying kiln be dried, bake out temperature is 75 degree,Make its moisture content < 0.04%;
(8) mixture is sent the powder of different batches of the same granularity section after drying into dry-mixed machine and is dry mixed 2.1 littleTime;
(9) fine screen, to walk gained powder in the fine screen of ultrasonic vibration sieve, after removal conglomeration and large granular impurity isObtaining crystal silicon wafer cutting edge material, is then with quartz sand to enter at 25: 1 described crystal silicon wafer cutting edge material according to mass ratioRow mixes;
(10) product obtained above is loaded on there is silica gel, in the casing of activated carbon and zeolite, described siliconThe ratio of glue, activated carbon and zeolite is 5:3:2.
Described silicon carbide bulk material preferentially adopts green silicon carbide.
In sum, high-purity of the present invention, macrocrystalline carborundum raw material, ensured that carborundum cutting is micro-The good cutting performance of powder and stable physical state; Granularity is shaped as equivalance and knife edge, has ensured carborundumMicro mist is as the harmony of cutting blade material, thereby guarantee is cut minimizing of material TTV; Size distribution is concentratedAnd evenly; There are high thermal shock resistance and refractoriness under load, guaranteed that little line expansion is in the time that loading is cutNumber, ensures the stable of cutting, and has good suitability with cutting machine; Its micro mist possess bigger serface andClean appearance, has good suitability with the cutting fluid such as polyethylene glycol.
In this description, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed isWith the difference of other embodiment, identical similar part cross-references between each embodiment.
Although with reference to multiple explanatory embodiment of the present invention, invention has been described here,, shouldThis understanding, those skilled in the art can design a lot of other amendment and embodiments, these amendments andWithin embodiment will drop on the disclosed principle scope and spirit of the application.
Claims (2)
1. a preparation method for crystal silicon wafer cutting edge material, is characterized in that it comprises the following steps:
(1) choose silicon carbide bulk material, broken and sieve by vertical shaft impact crusher, collect granularity≤The carborundum granularity sand of 4.5mm; It comprises 1# grader and 2# grader, and the fine powder after material grinds is with blower fanThe air-flow producing is brought into 1# grader and carries out sorting, the excessively thick thing of granularity under the centrifugal action of 1# grading wheelMaterial fall back to refacing, qualified fine powder enters 2# grader with air-flow, under the centrifugal action of 2# grading wheel through going outTube cell is discharged, and obtains desired particle size, arranges with air-flow without the fine powder of discharging through micro mist cyclone collector tube cellGo out;
(2), under vacuum condition, dry ball milling classification adopts dry-type ball mill classification equipment to above-mentioned carborundum grainDegree sand carries out abrasive dust, classification obtains the silicon carbide powder that granularity is 3～8um;
(3), under vacuum condition, described silicon carbide powder is added to the water, and is 25～60KHz in frequencyUnder ultrasonic wave, concussion is processed 15～19 minutes, then passes into settler precipitation 10 minutes, then by settlerTop muddy water is extracted out;
(4) under vacuum condition, introduce overflow grading device, introduce upwards mobile current to overflow cylinder,When water velocity equals particle sinking speed, this particle is detained motionless. Particle diameter is greater than just sinking of this particle,Particle diameter is less than just overflowing with current of this particle. Slip is dropped into overflow cylinder, first goes out particulate with low discharge,Slightly tune up subsequently flow, and change overflow pipe position, can obtain a kind of specification micro mist. When what overflowWhen pulp density is very rare, again tunes up flow and change overflow pipe position, can obtain again a kind of thicker specificationMicro mist. Repeat operation, can separate the micro mist of each granularity, according to different grading requirements, adjustJoint pulp density, carries out overflow size separation; Pass into respectively acid dip pickle according to different-grain diameter again;
(5), under vacuum condition, acid dip pickle adds hydrochloric acid, stirring reaction 12 in the situation that stirring simultaneouslyAfter hour, depickling is to remove metal ion; And then pass in the centrifuge that the concentrated sulfuric acid is housed the described concentrated sulfuric acidWith the mass ratio of described silicon carbide powder be 1:30, and then stirring reaction 2 hours, further to remove metalIon, and slough moisture;
(6) slip after thickening adopts scraper centrifugal machine to classification carries out thickening processing, makes gainedMoisture content≤6% of powder;
(7) dry and the powder after thickening is sent into tunnel drying kiln be dried, bake out temperature is 75 degree,Make its moisture content < 0.04%;
(8) mixture is sent the powder of different batches of the same granularity section after drying into dry-mixed machine and is dry mixed 2.1 littleTime;
(9) fine screen, to walk gained powder in the fine screen of ultrasonic vibration sieve, after removal conglomeration and large granular impurity isObtaining crystal silicon wafer cutting edge material, is then with quartz sand to enter at 25: 1 described crystal silicon wafer cutting edge material according to mass ratioRow mixes;
(10) product obtained above is loaded on there is silica gel, in the casing of activated carbon and zeolite, described siliconThe ratio of glue, activated carbon and zeolite is 5:3:2.
2. the preparation method of crystal silicon wafer cutting edge material according to claim 1, is characterized in that described carbonSiClx piece material adopts green silicon carbide.
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| CN201610023966.6A CN105668570A (en) | 2016-01-14 | 2016-01-14 | Preparation method of silicon wafer cutting edge material |
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| CN201610023966.6A CN105668570A (en) | 2016-01-14 | 2016-01-14 | Preparation method of silicon wafer cutting edge material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108837926A (en) * | 2018-06-21 | 2018-11-20 | 自贡市锋锐新材料有限公司 | A kind of production line and production method for the production of single specification sword material |
| CN114768971A (en) * | 2022-03-29 | 2022-07-22 | 宁波江丰电子材料股份有限公司 | Germanium evaporation material and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114768971A (en) * | 2022-03-29 | 2022-07-22 | 宁波江丰电子材料股份有限公司 | Germanium evaporation material and preparation method and application thereof |
| CN114768971B (en) * | 2022-03-29 | 2023-11-07 | 宁波江丰电子材料股份有限公司 | Germanium evaporation material and preparation method and application thereof |
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