CN105656547B - Input signal strength display circuit for APD in Optical Receivers - Google Patents
Input signal strength display circuit for APD in Optical Receivers Download PDFInfo
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- CN105656547B CN105656547B CN201610064172.4A CN201610064172A CN105656547B CN 105656547 B CN105656547 B CN 105656547B CN 201610064172 A CN201610064172 A CN 201610064172A CN 105656547 B CN105656547 B CN 105656547B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0799—Monitoring line transmitter or line receiver equipment
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Abstract
The invention discloses a kind of input signal strength display circuit for being used for APD in Optical Receivers, including：Trans-impedance amplifier output voltage sampling module, the output signal of trans-impedance amplifier is sampled to obtain the output common mode DC voltage related to APD input signal strength；Virtual trans-impedance amplifier, replicated to obtain the circuit as trans-impedance amplifier to trans-impedance amplifier, obtain the output reference voltage when input signal strength is 0；Mutual conductance error amplifier, the error of output common mode DC voltage and output reference voltage is changed, obtain the current signal equivalent with APD input currents；Current ratio amplifier, scaled mirror is carried out to the output current of mutual conductance error amplifier, input signal strength is obtained and shows electric current.The present invention can show APD input signal strength in chip internal, smaller on trans-impedance amplifier input influence by the way of comparing trans-impedance amplifier output signal sampling, and peripheral system is using fairly simple.
Description
Technical field
The present invention relates to technical field of photo communication, and in particular to the input signal strength for APD in Optical Receivers shows
Show (RSSI, Receive Singal Strength Indicator) circuit.
Background technology
In optical communication field, trans-impedance amplifier usually as receiver preamplifier, as shown in figure 1, for tradition
APD (avalanche photodide) input signal strength display circuit schematic diagram, the mainly negative pole from avalanche photodide
Sampled, can not be in chip internal to the defeated of avalanche photodide so as to show the amplitude of input signal in chip exterior
Enter signal intensity to be shown, moreover, the circuit needs to add a pair of mirror image transistor circuits in peripheral application circuit, so as to
Cause the application of its peripheral system complicated.
In view of this, it is badly in need of providing a kind of input signal strength display circuit for being used for APD in Optical Receivers, Neng Gougeng
The easy input signal strength that avalanche photodide is shown in chip internal.
The content of the invention
The technical problems to be solved by the invention be how to design it is a kind of be used for Optical Receivers in APD input signal it is strong
Display circuit is spent, being capable of the easier input signal strength that avalanche photodide is shown in chip internal.
In order to solve the above-mentioned technical problem, the technical solution adopted in the present invention is to provide a kind of be used in Optical Receivers
APD input signal strength display circuit, including：
Trans-impedance amplifier output voltage sampling module, is sampled to the output voltage signal of trans-impedance amplifier, obtain with
The related output common mode DC voltage of APD input signal strength；
Virtual trans-impedance amplifier, the trans-impedance amplifier in the trans-impedance amplifier output voltage sampling module is replicated
The circuit as trans-impedance amplifier is obtained, so as to obtain an output reference voltage when input signal strength is 0；
Mutual conductance error amplifier, the error of the output common mode DC voltage and the output reference voltage is turned
Change, obtain the current signal equivalent with the APD input currents and output；
Current ratio amplifier, scaled mirror is carried out to the output current of the mutual conductance error amplifier, obtains input letter
Number intensity shows electric current.
In the above-mentioned technical solutions, the trans-impedance amplifier output voltage sampling module includes trans-impedance amplifier circuit and defeated
Go out common-mode voltage sample circuit, the trans-impedance amplifier circuit is made up of Open-loop amplifier and negative feedback resistor；The output is altogether
Mode voltage sample circuit is the standard RC low-pass filter circuits being made up of first resistor and the first electric capacity, is amplified for taking out across resistance
The common-mode DC voltage of device output voltage signal；
The virtual trans-impedance amplifier includes virtual Open-loop amplifier and virtual negative feedback resistor；
The mutual conductance error amplifier includes the first error amplifier, the second error amplifier, the first NMOS tube, second
NMOS tube and the 3rd NMOS tube；
The current ratio amplifier includes the first PMOS and the second PMOS.
In the above-mentioned technical solutions, the grid of first NMOS tube connects the output end of second error amplifier, leakage
Pole connects the positive pole of the APD, source ground；The grid of second NMOS tube connects the output end of second error amplifier,
Drain electrode connects the input of first error amplifier and the source electrode of the 3rd NMOS tube, source ground；3rd NMOS
The grid of pipe connects the output end of first error amplifier, and drain electrode connects the grid of the 4th NMOS tube and drain electrode, source electrode connect
The drain electrode of the input of first error amplifier and second NMOS tube；The grid of first PMOS connects drain electrode,
And connect drain electrode and the grid of second PMOS of the 3rd NMOS tube；First PMOS and the second PMOS
Source electrode connects power supply, the output end to drain as circuit of second PMOS.
In the above-mentioned technical solutions, by the trans-impedance amplifier output voltage sampling module, the virtual trans-impedance amplifier,
Second error amplifier and first NMOS tube composition negative-feedback circuit so that the output common mode DC voltage with
The output reference voltage is equal, and the drain voltage of first NMOS tube is equal with the output reference voltage；When described
When output common mode DC voltage is equal with the drain voltage of the output reference voltage and first NMOS tube, described first
The drain current of NMOS tube is equal with the DC current of the avalanche photodide.
In the above-mentioned technical solutions, by first error amplifier, second NMOS tube and the 3rd NMOS tube
The negative-feedback circuit of composition so that the drain voltage phase of the input voltage of first error amplifier and second NMOS tube
Deng；When the input voltage of first error amplifier is equal with the drain voltage of second NMOS tube, i.e., described second
When the drain current of NMOS tube is equal with the drain current of first NMOS tube, due to the grid current of second NMOS tube
It is equal with the grid current of first NMOS tube, and the source current of second NMOS tube and the source of first NMOS tube
Electrode current is equal, so, the drain current and the APD of the drain current of second NMOS tube and first NMOS tube
DC current is equal.
In the above-mentioned technical solutions, the input voltage of first error amplifier is equal with the output reference voltage.
In the above-mentioned technical solutions, by second NMOS tube, the 3rd NMOS tube, the first PMOS and the second PMOS group
Into current mirroring circuit so that the drain current of second NMOS tube be mirrored to second PMOS drain electrode output, from
And the output current of circuit is equal with the drain current of second PMOS and the drain current of second NMOS tube, so as to
Realize and the intensity of APD input currents is shown.
In the above-mentioned technical solutions, when the APD input currents are in the range of 1uA to 1mA, the output of the circuit
The error of electric current is less than 3%.
The present invention from APD positive pole by the way of being sampled, and traditional mode sampled from APD negative pole
Compare, solve the problems, such as the input signal strength that conventional method can not show APD in chip internal, and this programme is to periphery
The requirement of system application is simple, the input signal strength display circuit of the present invention for being used for APD in Optical Receivers, has
Advantages below：
(1) the RSSI circuits can show the input signal strength of avalanche photodide in chip internal；
(2) the RSSI circuits to the output voltage signal of trans-impedance amplifier by the way of being sampled and comparing, to across resistance
The input of amplifier influences smaller；
(3) peripheral system of the RSSI circuits is applied simpler than the peripheral system application of traditional RSSI circuits.
Brief description of the drawings
Fig. 1 is the schematic diagram of traditional APD input signal strength display circuit；
Fig. 2 is a kind of input signal strength display circuit for being used for APD in Optical Receivers provided in an embodiment of the present invention
Structured flowchart；
Fig. 3 is a kind of input signal strength display circuit for being used for APD in Optical Receivers provided in an embodiment of the present invention
Schematic diagram；
Fig. 4 is a kind of input signal strength display circuit for being used for APD in Optical Receivers provided in an embodiment of the present invention
Signal output and input characteristic curve figure.
Embodiment
Present invention is mainly applied to the trans-impedance amplifier circuit in optic communication, the crucial skill of trans-impedance amplifier is directed to
Art, i.e. input signal strength are shown, for precisely showing the input signal strength of avalanche photodide in chip internal, are
This, the present invention devises a kind of new input signal strength display methods, it is proposed that a kind of brand-new circuit structure, the present invention carry
The cardinal principle of the input signal strength display circuit gone out is by sampling, inciting somebody to action to the output voltage signal of trans-impedance amplifier
The output common mode DC voltage of obtained trans-impedance amplifier carries out conversion process with the output reference voltage of virtual trans-impedance amplifier
The current signal equivalent with avalanche photodide operating current and output are obtained, then current signal is entered according to current ratio
Row amplification so that current signal is consistent with the input signal strength of avalanche photodide, completes in chip internal to snowslide light
The display of the input signal strength of electric diode.This circuit that this programme proposes can be in nearly 60dB signal input range
The input signal strength of linear display avalanche photodide, moreover, mirror image triode device of this programme without peripheral applications,
So that using more convenient and flexible.
The present invention is described in detail with reference to specification drawings and specific embodiments.
The embodiments of the invention provide a kind of input signal strength display circuit for being used for APD in Optical Receivers, such as Fig. 2
It is shown, including：
Trans-impedance amplifier output voltage sampling module 10, is sampled to the output voltage signal of trans-impedance amplifier, obtains
The output common mode DC voltage V related to APD input signal strengthsample；
Virtual trans-impedance amplifier 20, is replicated to the trans-impedance amplifier in trans-impedance amplifier output voltage sampling module 10
A circuit as trans-impedance amplifier is obtained, so as to obtain an output reference voltage when input signal strength is 0
Vref；
Mutual conductance error amplifier 30, to trans-impedance amplifier output voltage sampling module 10 and the electricity of virtual trans-impedance amplifier 20
Hold up difference to be changed, obtain the current signal equivalent with avalanche photodide operating current and output；
Current ratio amplifier 40, scaled mirror is carried out to the output current of mutual conductance error amplifier 30, obtains input letter
Number intensity shows electric current, meanwhile, the output current direction of mutual conductance error amplifier 30 is changed, allows it to turn into mainstream applications
Current source scheme.
As shown in figure 3, trans-impedance amplifier output voltage sampling module 10 includes trans-impedance amplifier circuit and output common mode electricity
Sample circuit is pressed, trans-impedance amplifier circuit is made up of Open-loop amplifier 101 and negative feedback resistor 102；Output common mode voltage sampling
Circuit is the standard RC low-pass filter circuits being made up of the electric capacity 104 of first resistor 103 and first, defeated for taking out trans-impedance amplifier
Go out the common-mode DC voltage of voltage signal.
Virtual trans-impedance amplifier 20 includes virtual Open-loop amplifier 201 and virtual negative feedback resistor 202.
Mutual conductance error amplifier 30 includes the first error amplifier 301, the second error amplifier 302, the first NMOS tube
303rd, the second NMOS tube 304 and the 3rd NMOS tube 305.
Current ratio amplifier 40 includes the first PMOS 401 and the second PMOS 402.
Wherein, the grid of the first NMOS tube 303 connects the output end of the second error amplifier 302, and drain electrode connects APD positive pole,
Source ground；The grid of second NMOS tube 304 connects the output end of the second error amplifier 302, and drain electrode connects the first error amplifier
The source electrode of 301 input and the 3rd NMOS tube 305, source ground；The grid of 3rd NMOS tube 305 connects the first error amplifier
301 output end, drain electrode connect grid and the drain electrode of the 4th NMOS tube, and source electrode connects the input and the of the first error amplifier 301
The drain electrode of two NMOS tubes 304；The grid of first PMOS 401 connects drain electrode, and connects the drain electrode and second of the 3rd NMOS tube 305
The grid of PMOS 402；The source electrode of first PMOS 401 and the second PMOS 402 connects power supply, the drain electrode of the second PMOS 402
Output end as circuit；
By trans-impedance amplifier output voltage sampling module 10, virtual trans-impedance amplifier 20, the second error amplifier 302 and
The negative-feedback circuit of one NMOS tube 303 composition so that the output common mode direct current of trans-impedance amplifier output voltage sampling module 10
Press VsampleWith the output reference voltage V of virtual trans-impedance amplifier 20refIt is equal, and the drain voltage of the first NMOS tube 303
VD_NMOS303With the output reference voltage V of virtual trans-impedance amplifier 20refIt is equal；As output common mode DC voltage VsampleWith output
Reference voltage VrefWith the drain voltage V of the first NMOS tube 303D_NMOS303When equal, i.e. Vsample=Vref=VD_NMOS303When, the
The drain current of one NMOS tube 303 is equal with APD DC current, i.e. ID_NMOS303=IAPD。
The negative-feedback circuit being made up of the first error amplifier 301, the second NMOS tube 304 and the 3rd NMOS tube 305 so that
The input voltage V of first error amplifier 301refWith the drain voltage V of the second NMOS tube 304bakIt is equal；When the first error is amplified
The input voltage of device 301 is equal with the drain voltage of the second NMOS tube 304, i.e. Vref=Vbak=VD_NMOS304When, i.e. the 2nd NMOS
When the drain current of pipe 304 is equal with the drain current of the first NMOS tube 303, due to the second NMOS tube 304 grid current with
The grid current of first NMOS tube 303 is equal, and the source current of the second NMOS tube 304 and the source electrode of the first NMOS tube 303 electricity
Flow it is equal, so, the drain current of the second NMOS tube 304 and the drain current and APD DC current phases of the first NMOS tube 303
Deng i.e. ID_NMOS304=ID_NMOS303=IAPD。
The input voltage V of first error amplifier 301refWith output reference voltage VrefIt is equal.
The electric current being made up of the second NMOS tube 304, the 3rd NMOS tube 305, the first PMOS 401 and the second PMOS 402
Mirror circuit so that the drain current of the second NMOS tube 304 is mirrored to the drain electrode output of the second PMOS 402, so that circuit is defeated
Go out electric current and the second PMOS 402 drain current and the second NMOS tube 304 drain current it is equal, i.e. IRSSI=ID_PMOS402
=ID_NMOS304, it is achieved thereby that being shown to the intensity of APD input currents.
As shown in figure 4, the output current I for circuitRSSIWith APD input currents IAPDPerformance diagram, as seen from the figure,
As APD input currents IAPDWhen in the range of 1uA to 1mA, the output current I of circuitRSSIError be less than 3%.
The present invention is not limited to above-mentioned preferred forms, anyone structure change made under the enlightenment of the present invention,
The technical schemes that are same or similar to the present invention, each fall within protection scope of the present invention.It should be noted that
The term used in embodiments of the present invention is only merely for the purpose of description specific embodiment, and is not intended to be limiting the present invention.
" one kind " of singulative used in the embodiment of the present invention and appended claims, " described " and "the" are also intended to bag
Most forms are included, unless context clearly shows that other implications.It is also understood that term "and/or" used herein is
Refer to and any or all may be combined comprising the associated list items purpose of one or more.
Claims (6)
1. the input signal strength display circuit for APD in Optical Receivers, it is characterised in that including：
Trans-impedance amplifier output voltage sampling module, is sampled to the output voltage signal of trans-impedance amplifier, obtains with APD's
The related output common mode DC voltage of input signal strength；
Virtual trans-impedance amplifier, the trans-impedance amplifier in the trans-impedance amplifier output voltage sampling module is replicated to obtain
With the circuit as trans-impedance amplifier, so as to obtain one input signal strength be 0 when output reference voltage；
Mutual conductance error amplifier, the error of the output common mode DC voltage and the output reference voltage is changed, obtained
To the current signal equivalent with the APD input currents and output；
Current ratio amplifier, scaled mirror is carried out to the output current of the mutual conductance error amplifier, it is strong to obtain input signal
Degree shows electric current；
The trans-impedance amplifier output voltage sampling module includes trans-impedance amplifier circuit and output common mode voltage sample circuit, institute
Trans-impedance amplifier circuit is stated to be made up of Open-loop amplifier and negative feedback resistor；The output common mode voltage sample circuit is by first
The standard RC low-pass filter circuits of resistance and the first electric capacity composition, the common mode for taking out trans-impedance amplifier output voltage signal are straight
Flow voltage；
The virtual trans-impedance amplifier includes virtual Open-loop amplifier and virtual negative feedback resistor；
The mutual conductance error amplifier includes the first error amplifier, the second error amplifier, the first NMOS tube, the second NMOS tube
With the 3rd NMOS tube；
The current ratio amplifier includes the first PMOS and the second PMOS；
The grid of first NMOS tube connects the output end of second error amplifier, and drain electrode connects the positive pole of the APD, source electrode
Ground connection；The grid of second NMOS tube connects the output end of second error amplifier, and drain electrode connects the first error amplification
The source electrode of the input of device and the 3rd NMOS tube, source ground；The grid of 3rd NMOS tube connects first error
The output end of amplifier, drain electrode connect grid and the drain electrode of the 4th NMOS tube, and source electrode connects the input of first error amplifier
With the drain electrode of second NMOS tube；The grid of first PMOS connects drain electrode, and connects the drain electrode of the 3rd NMOS tube
With the grid of second PMOS；The source electrode of first PMOS and the second PMOS connects power supply, second PMOS
Output end of the drain electrode as circuit.
2. it is used for the input signal strength display circuit of APD in Optical Receivers as claimed in claim 1, it is characterised in that
By the trans-impedance amplifier output voltage sampling module, the virtual trans-impedance amplifier, second error amplifier and described
The negative-feedback circuit of first NMOS tube composition so that the output common mode DC voltage is equal with the output reference voltage, and
The drain voltage of first NMOS tube is equal with the output reference voltage；When the output common mode DC voltage with it is described defeated
Go out reference voltage and first NMOS tube drain voltage it is equal when, drain current and the APD of first NMOS tube
DC current it is equal.
3. it is used for the input signal strength display circuit of APD in Optical Receivers as claimed in claim 2, it is characterised in that
The negative-feedback circuit being made up of first error amplifier, second NMOS tube and the 3rd NMOS tube so that described
The input voltage of first error amplifier and the drain voltage of second NMOS tube are equal；When first error amplifier
When input voltage is equal with the drain voltage of second NMOS tube, i.e., the drain current and described first of described second NMOS tube
When the drain current of NMOS tube is equal, due to the grid current and the grid current of first NMOS tube of second NMOS tube
It is equal, and the source current of second NMOS tube is equal with the source current of first NMOS tube, so, described second
The drain current of NMOS tube is equal with the drain current of first NMOS tube and the DC current of the APD.
4. it is used for the input signal strength display circuit of APD in Optical Receivers as claimed in claim 3, it is characterised in that
The input voltage of first error amplifier is equal with the output reference voltage.
5. it is used for the input signal strength display circuit of APD in Optical Receivers as claimed in claim 4, it is characterised in that
The current mirroring circuit being made up of second NMOS tube, the 3rd NMOS tube, the first PMOS and the second PMOS so that described
The drain current of two NMOS tubes is mirrored to the drain electrode output of second PMOS, so as to the output current and described second of circuit
The drain current of PMOS and the drain current of second NMOS tube are equal, it is achieved thereby that the intensity to APD input currents
Display.
6. it is used for the input signal strength display circuit of APD in Optical Receivers as claimed in claim 5, it is characterised in that
When the APD input currents are in the range of 1uA to 1mA, the error of the output current of the circuit is less than 3%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610064172.4A CN105656547B (en) | 2016-01-29 | 2016-01-29 | Input signal strength display circuit for APD in Optical Receivers |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610064172.4A CN105656547B (en) | 2016-01-29 | 2016-01-29 | Input signal strength display circuit for APD in Optical Receivers |
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| CN105656547A CN105656547A (en) | 2016-06-08 |
| CN105656547B true CN105656547B (en) | 2018-02-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610064172.4A Active CN105656547B (en) | 2016-01-29 | 2016-01-29 | Input signal strength display circuit for APD in Optical Receivers |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106941379A (en) * | 2017-05-05 | 2017-07-11 | 烽火通信科技股份有限公司 | A kind of automatic gain control circuit for APD trans-impedance amplifiers |
| CN113965257B (en) * | 2021-09-24 | 2024-01-23 | 袁艳 | Signal strength indicating circuit applied to optical receiver and control method thereof |
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| CN101258503A (en) * | 2005-09-09 | 2008-09-03 | 阿列德·泰莱西斯公司 | Power monitor providing an extended range for monitoring input optical power incident on avalanche photodiodes |
| CN101871813A (en) * | 2010-06-18 | 2010-10-27 | 成都优博创技术有限公司 | Method and device for monitoring input optical power of avalanche photoelectric diode |
| CN103746744A (en) * | 2013-07-26 | 2014-04-23 | 厦门优迅高速芯片有限公司 | Average photocurrent monitoring circuit supporting APD application |
| CN104049193A (en) * | 2013-03-14 | 2014-09-17 | 马克西姆综合产品公司 | Avalanche photo diode detector systems |
| CN104868949A (en) * | 2015-04-08 | 2015-08-26 | 厦门优迅高速芯片有限公司 | Photoelectric current monitoring circuit applied to trans-impedance amplification circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7826740B2 (en) * | 2005-09-16 | 2010-11-02 | Allied Telesis Inc. | Apparatus and method for adaptive adjustment and performance monitoring of avalanche photo-diode optical receiver and laser transmitter for fiber link long haul applications |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101258503A (en) * | 2005-09-09 | 2008-09-03 | 阿列德·泰莱西斯公司 | Power monitor providing an extended range for monitoring input optical power incident on avalanche photodiodes |
| CN101871813A (en) * | 2010-06-18 | 2010-10-27 | 成都优博创技术有限公司 | Method and device for monitoring input optical power of avalanche photoelectric diode |
| CN104049193A (en) * | 2013-03-14 | 2014-09-17 | 马克西姆综合产品公司 | Avalanche photo diode detector systems |
| CN103746744A (en) * | 2013-07-26 | 2014-04-23 | 厦门优迅高速芯片有限公司 | Average photocurrent monitoring circuit supporting APD application |
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