CN105652516A - Lateral entrance type backlight module and making method and display device thereof - Google Patents
Lateral entrance type backlight module and making method and display device thereof Download PDFInfo
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- CN105652516A CN105652516A CN201610008825.7A CN201610008825A CN105652516A CN 105652516 A CN105652516 A CN 105652516A CN 201610008825 A CN201610008825 A CN 201610008825A CN 105652516 A CN105652516 A CN 105652516A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
- G02B6/004—Scattering dots or dot-like elements, e.g. microbeads, scattering particles, nanoparticles
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0065—Manufacturing aspects; Material aspects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a lateral entrance type backlight module and a making method and display device thereof and relates to the technical field of display. The lateral entrance type backlight module and the making method and display device thereof are used for preventing the display device from generating a blue edge phenomenon so as to improve the display effect of the display device. The lateral entrance type backlight module comprises a light guide plate and a blue light source located on one side of the light-entrance face of the light guide plate, the light-emitting face of the light guide plate is provided with a quantum dot layer, and the quantum dot layer completely covers the light-emitting face of the light guide late. The quantum dot layer comprises a quantum dot for emitting red light and quantum dots for emitting green light. The lateral entrance type backlight module is used for making the display device of a high colour gamut.
Description
Technical field
The present invention relates to Display Technique field, relate in particular to a kind of side entrance back module and preparation method thereof, show dressPut.
Background technology
Display unit generally includes liquid crystal panel and for liquid crystal panel provides backlight module backlight, wherein, and backlight moduleFor side entrance back module, this side entrance back module comprises blue light source, LGP, diffusion sheet and glue frame.
In order to improve the colour gamut of display unit, the one side of common diffusion sheet in side entrance back module in prior artOn quantum dot layer is set. Wherein quantum dot layer can be used in the reason of colour gamut that improves display unit and is, quantum dot is being subject toThe light of specific wavelength can send monochromatic light after irradiating. Particularly, light is in the side entrance back module with said structureCirculation way as follows: first the blue light that blue light source sends is injected from the incidence surface of LGP, then going out from LGPLight face directive diffusion sheet, then the blue light of directive diffusion sheet is by quantum dot layer, now a part of blue-light excited quantum dot, the amount of makingSon point sends ruddiness or green glow, and another part blue light directly sees through quantum dot layer, and is mixed to form white with above-mentioned ruddiness, green glowLight, to offer liquid crystal panel.
But present inventor finds, owing to having gap between the edge of diffusion sheet and glue frame, thereby make fromA part of blue light that the exiting surface of LGP penetrates can pass through this gap, and direct irradiation is to the edge of liquid crystal panel, and then makesThere is blue limit phenomenon in display unit, causes the display effect of display unit not good.
Summary of the invention
The object of the present invention is to provide a kind of side entrance back module and preparation method thereof, display unit, for avoidingThere is blue limit phenomenon in display unit, to improve the display effect of display unit.
For achieving the above object, side entrance back module provided by the invention adopts following technical scheme:
A kind of side entrance back module, this side entrance back module comprises LGP and is positioned at the incidence surface of described LGPThe blue light source of one side, wherein, on the exiting surface of described LGP, be provided with quantum dot layer, and described quantum dot layer covers completelyThe exiting surface of described LGP; Described quantum dot layer comprises quantum dot for glowing and the quantum dot for green light.
On exiting surface due to LGP, be provided with quantum dot layer, and quantum dot layer covers the exiting surface of LGP completely,Wherein, quantum dot layer comprises quantum dot for glowing and the quantum dot for green light, thereby blue light source is sent outThe blue light going out is injected from the incidence surface of LGP, then, from the exiting surface of LGP penetrates, all can pass through quantum dot layer, nowThe blue-light excited quantum dot of a part, makes quantum dot send ruddiness or green glow, and another part blue light directly sees through quantum dot layer, andBe mixed to form white light with above-mentioned ruddiness, green glow, therefore, do not exist blue light direct irradiation that blue light source sends to liquid crystal faceThe phenomenon at the edge of plate, thus can avoid display unit to occur blue limit phenomenon, improve the display effect of display unit.
In addition, the present invention also provides a kind of display unit, and this display unit comprises side entrance back mould as aboveGroup.
Because display unit provided by the present invention comprises side entrance back module as above, therefore, display unitThere is the beneficial effect identical with side entrance back module, repeat no more herein.
In addition, the present invention also provides a kind of preparation method of side entrance back module, the system of this side entrance back moduleComprise as method: a LGP is provided; On the exiting surface of described LGP, form quantum dot layer, the complete institute of described quantum dot layerState and cover the exiting surface of LGP, and described quantum dot layer comprises quantum dot for glowing and the quantum for green lightPoint.
Because the preparation method of side entrance back module provided by the present invention comprises above step, thus can be at leaded lightOn the exiting surface of plate, form quantum dot layer, and quantum dot layer covers the exiting surface of LGP completely, wherein, quantum dot layer comprises useIn the quantum dot glowing with for the quantum dot of green light, and then blue light the entering from LGP that blue light source is sentLight face is injected, and then, from the exiting surface of LGP penetrates, all can pass through quantum dot layer, now a part of blue-light excited quantumPoint, makes quantum dot send ruddiness or green glow, and another part blue light directly sees through quantum dot layer, and mixes with above-mentioned ruddiness, green glowClose formation white light, therefore, do not have blue light direct irradiation that blue light source the sends phenomenon to the edge of liquid crystal panel, fromAnd can avoid display unit to occur blue limit phenomenon, improve the display effect of display unit.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, will describe embodiment belowIn the accompanying drawing of required use be briefly described, apparently, the accompanying drawing in the following describes is only more of the present inventionEmbodiment, for those of ordinary skill in the art, is not paying under the prerequisite of creative work, can also be attached according to theseFigure obtains other accompanying drawing.
Fig. 1 is the first structural representation of the side entrance back module in the embodiment of the present invention;
Fig. 2 is the second structural representation of the side entrance back module in the embodiment of the present invention;
Fig. 3 is the stream that the mode of passing through sputter in the embodiment of the present invention forms quantum dot layer on the exiting surface of LGPCheng Tu;
Fig. 4 is that the mode of passing through sputter in the embodiment of the present invention is formed for glowing on the exiting surface of LGPQuantum dot layer or for the flow chart of the quantum dot layer of green light;
Fig. 5 is that the mode of passing through sputter in the embodiment of the present invention forms the former of quantum dot layer on the exiting surface of LGPReason figure.
Description of reference numerals:
1-LGP; 2-blue light source; 3-quantum dot layer;
The quantum dot layer of 31-for glowing; 32-is for the quantum dot layer of green light; 4-protective layer;
5-anode base; 6-negative electrode pedestal; 7-quantum dot target;
8-argon ion; The quantum dot of 9-for glowing; 10-is for the quantum dot of green light;
11-diaphragm.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, completeDescribe, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiment wholely. Based on thisEmbodiment in bright, those of ordinary skill in the art are not making the every other enforcement obtaining under creative work prerequisiteExample, all belongs to the scope of protection of the invention.
Embodiment mono-
The embodiment of the present invention provides a kind of side entrance back module, and as shown in Figure 1, this side entrance back module comprises leadsTabula rasa 1 and be positioned at the blue light source 2 of incidence surface one side of LGP 1, is provided with quantum dot layer 3 on the exiting surface of LGP 1, andQuantum dot layer 3 covers the exiting surface of LGP 1 completely, and wherein, quantum dot layer 3 comprises quantum dot for glowing and for sending outThe quantum dot of green glow.
It should be noted that, the preparation method of above-mentioned quantum dot layer 3 can have multiple, and those skilled in the art can rootCarry out choose reasonable according to actual needs. Alternatively, above-mentioned quantum dot layer 3 forms by the mode of sputter. Which has followingSeveral respects beneficial effect: first aspect, owing to forming in the process of quantum dot layer 3 in sputter, does not need or only need to useA small amount of organic solvent, thus the pollution to environment can be reduced; Second aspect, the quantum dot layer 3 forming by the mode of sputterFiner and close, contribute to improve the luminous efficiency of quantum dot layer 3, thereby make power at blue light source 2 lower, sideEnter formula backlight module and can there is higher brightness, and then can reduce the energy consumption of display unit; The third aspect, by sputterMode can form thinner quantum dot layer 3, contributes to realize the slimming of side entrance back module; Fourth aspect, by spatteringThe quantum dot layer 3 that the mode of penetrating forms is more even, contributes to side entrance back module to provide uniform light for liquid crystal panel, fromAnd can further improve the display effect of display unit.
On exiting surface due to LGP 1, be provided with quantum dot layer 3, and quantum dot layer 3 covers the bright dipping of LGP 1 completelyFace, wherein, quantum dot layer 3 comprises quantum dot for glowing and the quantum dot for green light, thereby makes blue light source 2The blue light sending is injected from the incidence surface of LGP 1, then, from the exiting surface of LGP 1 penetrates, all can pass through quantum dotIn layer 3, now a part of blue-light excited quantum dot, makes quantum dot send ruddiness or green glow, and another part blue light directly sees throughQuantum dot layer 3, and be mixed to form white light with above-mentioned ruddiness, green glow, therefore, the blue light that does not exist blue light source 2 to send is straightConnect the phenomenon at the edge that exposes to liquid crystal panel, thereby can avoid display unit to occur blue limit phenomenon, improved display unitDisplay effect.
In addition, the structure of above-mentioned quantum dot layer 3 also can have multiple, and those skilled in the art can enter according to actual conditionsRow choose reasonable. Exemplarily, as shown in Figure 2, the quantum dot layer 3 in the embodiment of the present invention is double-decker, this double-deckerIn one deck be the quantum dot layer 31 for glowing, another layer in this double-decker is the quantum dot layer for green light32, or as shown in Figure 1, quantum dot layer 3 is single layer structure, and this single layer structure comprises the amount for glowing of mutual mixingSon point and for the quantum dot of green light, now, the preparation method of quantum dot layer 3 is simpler, therefore, excellent in the embodiment of the present inventionSelect quantum dot layer 3 to there is said structure. It should be noted that, in the time that quantum dot layer 3 is double-decker, quantum dot layer 3 concreteStructure comprises following two kinds of concrete conditions: situation one, for the quantum dot layer 31 glowing be positioned at LGP 1 with for green lightQuantum dot layer 32 between; Situation two, is positioned at LGP 1 and the quantum dot for glowing for the quantum dot layer 32 of green lightBetween layer 31.
In addition, in the embodiment of the present invention preferably, for the quantum dot that glows with include for the quantum dot of green light:Semiconductor shell and be arranged at the luminous nucleon in semiconductor shell, wherein, semiconductor shell can play the effect of protection luminous nucleon, in caseOnly luminous nucleon is destroyed, thereby makes the luminous nucleon can be more stably luminous. Exemplarily, for the quantum dot that glowsThe material of luminous nucleon is cadmium selenide, and diameter is 5 nanometer～5.5 nanometers, for the material of the luminous nucleon of the quantum dot of green light alsoFor cadmium selenide, diameter is 3 nanometer～3.5 nanometers. Exemplarily, for material and the use of the semiconductor shell of the quantum dot that glowsMaterial in the semiconductor shell of the quantum dot of green light is zinc sulphide.
In addition, as shown in Figure 1, in the one side of quantum dot layer 3 face away from light guide 1, can also be provided with protective layer 4, this protectionLayer 4 is for preventing that quantum dot from contacting with oxygen with water and going bad, so that quantum dot can more stably be worked. Exemplarily,The material of protective layer 4 is tin indium oxide.
It should be noted that present inventor finds, the smooth degree of LGP 1 can be to being positioned at going out of LGP 1The performance of the quantum dot layer 2 on light face exerts an influence, exemplarily, when the warped height of LGP 1 and the thickness of LGP 1 itBetween ratio when larger, can cause being positioned on the one hand the in uneven thickness of quantum dot layer 3 on the exiting surface of LGP 1, therebyMake side entrance back module not provide uniform light for liquid crystal panel, and then make the display effect of display unit not good, anotherCan cause other assembly in side entrance back module successfully not install on the one hand, therefore, to the warped height of LGP 1And it is very important that the ratio between the thickness of LGP 1 is selected. Exemplarily, in the embodiment of the present invention, select, leadRatio between the warped height of tabula rasa 1 and the thickness of LGP 1 is less than or equal to 0.5.
In addition, the embodiment of the present invention also provides a kind of display unit, and this display unit comprises side entering type as aboveBacklight module. This display unit can be: liquid crystal panel, Electronic Paper, mobile phone, panel computer, television set, display, notebookAny product or parts with Presentation Function such as computer, DPF, navigator. Due to showing that the embodiment of the present invention providesShowing device comprises side entrance back module as above, and therefore, display unit has have identical with side entrance back moduleBeneficial effect fruit repeats no more herein.
Embodiment bis-
The embodiment of the present invention provides a kind of preparation method of side entrance back module, the making of this side entrance back moduleMethod comprises: a LGP 1 is provided; On the exiting surface of LGP 1, form quantum dot layer 3, quantum dot layer 3 covers leaded light completelyThe exiting surface of plate 1, and 3 layers of quantum dots comprise the quantum dot for glowing and the quantum dot for green light.
The preparation method of the side entrance back module providing due to the embodiment of the present invention comprises above step, thereby canOn the exiting surface of LGP 1, form quantum dot layer 3, and quantum dot layer 3 covers the exiting surface of LGP 1 completely, wherein, quantumPoint layer 3 comprises quantum dot for glowing and the quantum dot for green light, and then the blue light that blue light source 2 is sentInject from the incidence surface of LGP 1, then, from the exiting surface of LGP 1 penetrates, all can pass through quantum dot layer 3, now oneDivide blue-light excited quantum dot, make quantum dot send ruddiness or green glow, another part blue light directly sees through quantum dot layer 3, and withAbove-mentioned ruddiness, green glow are mixed to form white light, therefore, do not exist blue light direct irradiation that blue light source 2 sends to liquid crystal faceThe phenomenon at the edge of plate, thus can avoid display unit to occur blue limit phenomenon, improve the display effect of display unit.
It should be noted that, the detailed description of the invention that forms quantum dot layer 3 on the exiting surface of LGP 1 can have manyKind, those skilled in the art can carry out choose reasonable according to actual needs. Alternatively, shape on the exiting surface of LGP 1Become the step of quantum dot layer 3 to comprise: the mode by sputter forms quantum dot layer 3 on the exiting surface of LGP 1. Which toolThere is following several respects beneficial effect: first aspect, owing to forming in the process of quantum dot layer 3 in sputter, does not need or only needUse a small amount of organic solvent, thereby can reduce the pollution to environment; Second aspect, the quantum forming by the mode of sputterPoint layer 3 is finer and close, contributes to improve the luminous efficiency of quantum dot layer 3, thereby makes the situation lower at the power of blue light source 2Under, side entrance back module can have higher brightness, and then can reduce the energy consumption of display unit; The third aspect, passes throughThe mode of sputter can form thinner quantum dot layer 3, contributes to realize the slimming of side entrance back module; Fourth aspect,The quantum dot layer 3 forming by the mode of sputter is more even, contributes to side entrance back module to provide uniform for liquid crystal panelLight, thus the display effect of display unit can further be improved.
From describing in embodiment mono-, quantum dot layer 3 can have different structures, for example, as shown in Figure 2, quantumPoint layer 3 can comprise quantum dot layer 31 for glowing and the quantum dot layer 32 for green light, or, as shown in Figure 1, amountSon point layer 3 is single layer structure, this single layer structure comprise mutual mixing for the quantum dot that glows with for the amount of green lightSub-, therefore, for the quantum dot layer 3 with different structure, preparation method also can be different.
Exemplarily, in the time making quantum dot layer 3 as shown in Figure 1, as shown in Figure 3, the mode by sputter is at leaded lightThe step that forms quantum dot layer 3 on the exiting surface of plate 1 comprises: step S301, provide a sputtering chamber; Step S302, by leaded lightPlate 1 is positioned on the anode base in sputtering chamber, quantum dot target is positioned on the negative electrode pedestal in sputtering chamber to quantumPoint target comprise mutual mixing for glowing quantum dot and the quantum dot for green light; Step S303, at anode baseAnd between negative electrode pedestal, apply voltage to form electric field, the inert gas being filled with in sputtering chamber ionizes under the effect of electric field,The inert gas ion that ionization generates bombards quantum dot target under the effect of electric field; Step S304, pound for rubescentThe quantum dot of light and be deposited on the exiting surface of LGP 1 for the quantum dot of green light, forms quantum dot layer 3. Exemplarily,Inert gas can be argon gas.
Exemplarily, in the time making quantum dot layer 3 as shown in Figure 2, as shown in Figure 4, the mode by sputter is at leaded lightThe step that forms quantum dot layer 3 on the exiting surface of plate 1 comprises: step S401, provide a sputtering chamber; Step S402, by leaded lightPlate 1 is positioned on the anode base in sputtering chamber, quantum dot target is positioned on the negative electrode pedestal in sputtering chamber to quantumPoint target only includes quantum dot for glowing or the quantum dot for green light; Step S403, at anode base and the moonBetween pole base, apply voltage to form electric field, the inert gas being filled with in sputtering chamber ionizes under the effect of electric field, ionizationThe inert gas ion generating bombards quantum dot target under the effect of electric field; Step S404, pound for glowingQuantum dot or be deposited on the exiting surface of LGP 1 for the quantum dot of green light, the quantum dot layer that is formed for glowing31 or for the quantum dot layer 32 of green light.
It should be noted that, when the quantum dot target in above-mentioned steps S402 only includes the quantum dot for glowingTime, after execution of step S401～step S404, on the exiting surface of LGP 1, form the quantum dot layer for glowing31, then quantum dot target is replaced by the quantum dot target only including for the quantum dot of green light, repeat above-mentioned stepRapid S401～step 404 can be formed for the quantum dot layer 32 of green light on the exiting surface of LGP 1. Certainly above-mentioned use,Also can be conversely in the quantum dot layer 31 glowing and the production order of the quantum dot layer 32 for green light.
In addition, present inventor finds, in the manufacturing process of above-mentioned quantum dot layer 3, if anode base and negative electrodeThe voltage applying between pedestal is too small, and the inert gas in sputtering chamber cannot ionize, and causes the amount in quantum dot targetSub-point can not be shelled out, and then cannot form quantum dot layer 3, if the voltage applying between anode base and negative electrode pedestalToo high, inert gas ion is excessively strong to the bombardment of quantum dot target, not only can cause the speed of the quantum dot pounding excessive, entersAnd make this quantum dot excessive to the bombardment of LGP 1, may cause the damage of LGP 1, but also to equipment requirementHeight, has increased the cost of equipment. In the embodiment of the present invention, preferably, the voltage applying between anode base and negative electrode pedestal is 7Kilovolt～50 kilovolts.
Specifically implement for the ease of those skilled in the art, below the embodiment of the present invention exemplify the most concrete a kind of formationThe method of quantum dot layer 3, wherein, the method taking form quantum dot layer 3 as single layer structure, this single layer structure comprises mutual mixingFor the quantum dot that glows and be that example describes for the quantum dot of green light.
As shown in Figure 5, first LGP 1 is positioned on the anode base 5 of sputtering chamber, wherein, the bright dipping of LGP 1Facing to the negative electrode pedestal 6 of sputtering chamber. Then quantum dot target 7 is blocked and in negative electrode pedestal 6, wherein, quantum dot target 7Comprise quantum dot 9 for glowing and the quantum dot 10 for green light.
Then sputtering chamber is vacuumized, be filled with argon gas to form argon atmosphere in sputtering chamber, anode base 5 HesBetween negative electrode pedestal 6, apply the voltage of 7 kilovolts to form electric field, make argon gas ionization form argon ion 8, argon ion 8 is at above-mentioned electricityUnder the effect of field, move to quantum dot target 7, so bombardment quantum dot target 7, quantum dot 9 Hes for glowing that poundBe deposited on the exiting surface of LGP 1 for the quantum dot 10 of green light, form quantum dot layer 3.
It is worth mentioning that, in said process, in order to prevent that dust from entering in the site on the dot surface of LGP 1,In the embodiment of the present invention preferably on the anode base 5 that LGP 1 is positioned over to sputtering chamber before, in the site of LGP 1On face, cover layer protecting film 11.
In the time making quantum dot layer 3 by above method, the external environment condition beyond sputtering chamber is preferably hundred grades of dust free rooms,Thereby can effectively prevent that dust from causing harmful effect to the formation of above-mentioned quantum dot layer 3.
In addition, on the exiting surface of LGP 1, form quantum dot layer 3, and quantum dot layer 3 covers going out of LGP 1 completelyLight face, wherein, after quantum dot layer 3 comprises quantum dot 9 for glowing and the step for the quantum dot 10 of green light, shouldThe preparation method of side entrance back module also comprises: in the one side of quantum dot layer 3 face away from light guide 1, form protective layer 4. This guarantorSheath 4 contacts with oxygen with water and goes bad for preventing quantum dot, so that quantum dot can more stably be worked. ExemplaryGround, the material of protective layer 4 can be tin indium oxide. Alternatively, above-mentioned protective layer 4 can form by the mode of sputter, passes throughThe mode of sputter forms the concrete steps of protective layer 4 and can, with reference to the concrete steps that form quantum dot layer 3, no longer go to live in the household of one's in-laws on getting married hereinState.
The above, be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, anyBe familiar with those skilled in the art in the technical scope of the present invention's exposure, can expect easily changing or replacing, all should containCover within protection scope of the present invention. Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (13)
1. a side entrance back module, comprises LGP and is positioned at the blue light source of incidence surface one side of described LGP, itsBe characterised in that, on the exiting surface of described LGP, be provided with quantum dot layer, and described quantum dot layer covers described LGP completelyExiting surface; Described quantum dot layer comprises quantum dot for glowing and the quantum dot for green light.
2. side entrance back module according to claim 1, is characterized in that, described quantum dot layer is by the mode of sputterForm.
3. side entrance back module according to claim 1, is characterized in that, described quantum dot layer is single layer structure, instituteState described quantum dot and the described quantum dot for green light for glowing that single layer structure comprises mutual mixing; Or,Described quantum dot layer is double-decker, and the one deck in described double-decker is the quantum dot layer for glowing, described double-deck knotAnother in structure layer is the quantum dot layer for green light.
4. side entrance back module according to claim 1, is characterized in that, described quantum dot and institute for glowingState for the quantum dot of green light and include: semiconductor shell and be arranged at the luminous nucleon in described semiconductor shell.
5. side entrance back module according to claim 4, is characterized in that, described sending out for the quantum dot that glowsThe material of the luminous nucleon of the material of light core and the described quantum dot for green light is cadmium selenide, the described amount for glowingThe diameter of the luminous nucleon of son point is 5 nanometer～5.5 nanometers, and the diameter of the luminous nucleon of the described quantum dot for green light is 3 to receiveRice～3.5 nanometers.
6. side entrance back module according to claim 4, is characterized in that, described for half of the quantum dot that glowsThe material of the semiconductor shell of the material of conductor shell and the described quantum dot for green light is zinc sulphide.
7. side entrance back module according to claim 1, is characterized in that, described quantum dot layer is described LGP dorsadOne side on be provided with protective layer.
8. side entrance back module according to claim 1, is characterized in that, the warped height of described LGP with described inRatio between the thickness of LGP is less than or equal to 0.5.
9. a display unit, is characterized in that, comprises the side entrance back module as described in claim 1～8 any one.
10. a preparation method for side entrance back module, is characterized in that, comprising:
One LGP is provided;
On the exiting surface of described LGP, form quantum dot layer, described quantum dot layer covers the bright dipping of described LGP completelyFace, and described quantum dot layer comprises quantum dot for glowing and the quantum dot for green light.
The preparation method of 11. side entrance back modules according to claim 10, is characterized in that, in the bright dipping of LGPThe step that forms quantum dot layer on face comprises: the mode by sputter forms described quantum dot on the exiting surface of described LGPLayer.
The preparation method of 12. side entrance back modules according to claim 11, is characterized in that, by the mode of sputterThe step that forms quantum dot layer on the exiting surface of LGP comprises:
One sputtering chamber is provided;
Described LGP is positioned on the anode base in described sputtering chamber, quantum dot target is positioned over to described sputtering chamberOn indoor negative electrode pedestal, described quantum dot target comprise mutual mixing for quantum dot and the amount for green light of glowingSub-point;
Between described anode base and described negative electrode pedestal, apply voltage to form electric field, be filled with lazy in described sputtering chamberProperty gas under the effect of described electric field, ionize, ionization generate inert gas ion under the effect of described electric field, bombard described inQuantum dot target;
Pound for the quantum dot glowing and the exiting surface that is deposited on described LGP for the quantum dot of green light,Form described quantum dot layer.
The preparation method of 13. side entrance back modules according to claim 11, is characterized in that, by the mode of sputterThe step that forms quantum dot layer on the exiting surface of LGP comprises:
One sputtering chamber is provided;
Described LGP is positioned on the anode base in described sputtering chamber, quantum dot target is positioned over to described sputtering chamberOn indoor negative electrode pedestal, described quantum dot target only includes quantum dot for glowing or the quantum for green lightPoint;
Between described anode base and described negative electrode pedestal, apply voltage to form electric field, be filled with lazy in described sputtering chamberProperty gas under the effect of described electric field, ionize, ionization generate inert gas ion under the effect of described electric field, bombard described inQuantum dot target;
Pound for the quantum dot glowing or the exiting surface that is deposited on described LGP for the quantum dot of green lightUpper, the quantum dot layer that is formed for glowing or the quantum dot layer for green light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610008825.7A CN105652516A (en) | 2016-01-04 | 2016-01-04 | Lateral entrance type backlight module and making method and display device thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106970490A (en) * | 2017-05-12 | 2017-07-21 | 深圳市华星光电技术有限公司 | Backlight module and liquid crystal display device |
| CN107329201A (en) * | 2017-07-03 | 2017-11-07 | 深圳Tcl新技术有限公司 | Side entrance back module and display device |
| CN108279460A (en) * | 2018-01-03 | 2018-07-13 | 上海中航光电子有限公司 | A kind of quantum dot light guide plate, backlight module and display device |
| CN109143680A (en) * | 2018-08-31 | 2019-01-04 | 青岛海信电器股份有限公司 | A kind of backlight module and display device |
| CN109991777A (en) * | 2019-04-09 | 2019-07-09 | 深圳市华星光电半导体显示技术有限公司 | Backlight module and preparation method thereof and display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866832A (en) * | 2010-05-25 | 2010-10-20 | 云南大学 | Method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on buffer layer by landfill |
| CN102565920A (en) * | 2012-02-15 | 2012-07-11 | 青岛海信电器股份有限公司 | Method for manufacturing mesh points of LGP (Light Guide Plate), LGP, backlight module and TV (Television) set |
| CN202511145U (en) * | 2012-04-12 | 2012-10-31 | 京东方科技集团股份有限公司 | Backlight module and liquid crystal display |
| CN202521397U (en) * | 2012-02-15 | 2012-11-07 | 青岛海信电器股份有限公司 | Backlight module |
| CN203069818U (en) * | 2013-02-22 | 2013-07-17 | 京东方科技集团股份有限公司 | Light guide plate, array substrate, backlight and LCD module |
| CN103676315A (en) * | 2013-12-06 | 2014-03-26 | 京东方科技集团股份有限公司 | Light guide plate, backlight source and liquid crystal display device |
| CN203771224U (en) * | 2014-04-18 | 2014-08-13 | 合肥鑫晟光电科技有限公司 | Display device and backlight module thereof |
| CN104421754A (en) * | 2013-08-27 | 2015-03-18 | 信利半导体有限公司 | LED (Light Emitting Diode) light source and backlight source and liquid crystal display comprising same |
-
2016
- 2016-01-04 CN CN201610008825.7A patent/CN105652516A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866832A (en) * | 2010-05-25 | 2010-10-20 | 云南大学 | Method for intermittently growing single-layer Ge quantum dots with high dimensional homogeneity on buffer layer by landfill |
| CN102565920A (en) * | 2012-02-15 | 2012-07-11 | 青岛海信电器股份有限公司 | Method for manufacturing mesh points of LGP (Light Guide Plate), LGP, backlight module and TV (Television) set |
| CN202521397U (en) * | 2012-02-15 | 2012-11-07 | 青岛海信电器股份有限公司 | Backlight module |
| CN202511145U (en) * | 2012-04-12 | 2012-10-31 | 京东方科技集团股份有限公司 | Backlight module and liquid crystal display |
| CN203069818U (en) * | 2013-02-22 | 2013-07-17 | 京东方科技集团股份有限公司 | Light guide plate, array substrate, backlight and LCD module |
| CN104421754A (en) * | 2013-08-27 | 2015-03-18 | 信利半导体有限公司 | LED (Light Emitting Diode) light source and backlight source and liquid crystal display comprising same |
| CN103676315A (en) * | 2013-12-06 | 2014-03-26 | 京东方科技集团股份有限公司 | Light guide plate, backlight source and liquid crystal display device |
| CN203771224U (en) * | 2014-04-18 | 2014-08-13 | 合肥鑫晟光电科技有限公司 | Display device and backlight module thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106970490A (en) * | 2017-05-12 | 2017-07-21 | 深圳市华星光电技术有限公司 | Backlight module and liquid crystal display device |
| CN107329201A (en) * | 2017-07-03 | 2017-11-07 | 深圳Tcl新技术有限公司 | Side entrance back module and display device |
| CN108279460A (en) * | 2018-01-03 | 2018-07-13 | 上海中航光电子有限公司 | A kind of quantum dot light guide plate, backlight module and display device |
| CN108279460B (en) * | 2018-01-03 | 2020-01-21 | 上海中航光电子有限公司 | Quantum dot light guide plate, backlight module and display device |
| CN109143680A (en) * | 2018-08-31 | 2019-01-04 | 青岛海信电器股份有限公司 | A kind of backlight module and display device |
| CN109991777A (en) * | 2019-04-09 | 2019-07-09 | 深圳市华星光电半导体显示技术有限公司 | Backlight module and preparation method thereof and display device |
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Application publication date: 20160608 |