CN105651794A - X-ray detector circuit - Google Patents

X-ray detector circuit Download PDF

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Publication number
CN105651794A
CN105651794A CN201610108383.3A CN201610108383A CN105651794A CN 105651794 A CN105651794 A CN 105651794A CN 201610108383 A CN201610108383 A CN 201610108383A CN 105651794 A CN105651794 A CN 105651794A
Authority
CN
China
Prior art keywords
resistance
ray
chip microcomputer
circuit
operational amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610108383.3A
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Chinese (zh)
Inventor
王燕妮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU MEILUN IMAGING SYSTEMS Co Ltd
Original Assignee
JIANGSU MEILUN IMAGING SYSTEMS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGSU MEILUN IMAGING SYSTEMS Co Ltd filed Critical JIANGSU MEILUN IMAGING SYSTEMS Co Ltd
Priority to CN201610108383.3A priority Critical patent/CN105651794A/en
Publication of CN105651794A publication Critical patent/CN105651794A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/083Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays

Abstract

The invention discloses an X-ray detector circuit. The X-ray detector circuit is characterized by comprising a photoelectric detector, an X-ray conversion circuit, a single chip microcomputer and a display screen, wherein the photoelectric detector is connected with the X-ray conversion circuit, and the X-ray conversion circuit is connected with the single chip microcomputer which is connected with the display screen; the photoelectric detector is used for acquiring X-ray signals, the X-ray conversion circuit is used for converting acquired optical signals into electrical signals and transmitting the electrical signals to the single chip microcomputer, the single chip microcomputer is used for processing the received electrical signals and transmitting the electrical signals to the display screen for displaying, and the display screen is used for displaying the received electrical signals. The X-ray detector circuit has the benefits as follows: noise suppression and precise processing of weak X-ray signals are realized through combination of a front current integration amplification circuit and a two-level operational amplifier circuit, and the X-ray detector circuit has the advantages of simple structure, skillful circuit design and high industrial application degree.

Description

A kind of X-ray detector circuit
Technical field
The present invention relates to a kind of X-ray detector circuit, belong to field of photoelectric technology.
Background technology
Since the eighties in 20th century, developed country main in the world has been used for the Industrial Computed Tomography of X ray Non-Destructive Testing and the Nondestructive Evaluation in the fields such as space flight, aviation, metallurgy, machinery, oil, iron and steel, automobile, electric power, geological prospecting, and existing X-ray detector can not well realize integration and amplify and noise suppressed, can not meeting requirement for X ray Weak Signal Processing, precision is not high enough.
Summary of the invention
It is an object of the invention to the defect overcoming prior art to exist, it is proposed to a kind of X-ray detector circuit.
The present invention adopts the following technical scheme that a kind of X-ray detector circuit, it is characterized in that, including photoelectric detector, X ray change-over circuit, single-chip microcomputer, display screen, described photoelectric detector is connected with described X ray change-over circuit, described X ray change-over circuit is connected with described single-chip microcomputer, and described single-chip microcomputer is connected with described display screen; Described photoelectric detector is used for gathering X-ray signal, described X ray change-over circuit is used for the optical signal collected being converted to the signal of telecommunication and being transferred to described single-chip microcomputer, described single-chip microcomputer is used for displaying being transferred in described display screen after the Electric signal processing received, and described display screen is used for showing the signal of telecommunication received.
Preferably, X ray change-over circuit includes preposition current integration amplifying circuit, two grades of operational amplification circuits, A/D change-over circuits, preposition current integration amplifying circuit and two grades of operational amplification circuits are connected, two grades of operational amplification circuits are connected with A/D change-over circuit, and A/D change-over circuit is connected with single-chip microcomputer.
Preferably, preposition current integration amplifying circuit includes switch S1, switch S2, electric capacity C, operational amplifier A 1, switch S1 is connected with the reverse input end of operational amplifier A 1, switch S2 and electric capacity C is in parallel, one end of switch S2 and electric capacity C is connected with the reverse input end of operational amplifier A 1, and the other end of switch S2 and electric capacity C is connected with the outfan of operational amplifier A 1.
Preferably, two grades of operational amplification circuits include resistance R1, resistance R2, resistance RG, resistance RF, operational amplifier A 2, resistance R1With resistance R2It is in parallel, resistance R1With resistance R2One end connect reference voltage VREF, resistance R1With resistance R2One end be connected with the in-phase input end of operational amplifier A 2, resistance RGOne end connect preposition current integration amplifying circuit output VIN, resistance RGThe other end be connected with the inverting input of operational amplifier A 2, resistance RFOne end be connected with the inverting input of operational amplifier A 2, resistance RFThe other end be connected with the outfan of operational amplifier A 2.
Preferably, the model of single-chip microcomputer is ATMEGA8 single-chip microcomputer.
Preferably, the model of display screen is LCD1602.
The beneficial effect that the present invention reaches: the present invention is by the combination of preposition current integration amplifying circuit and two grades of operational amplification circuits, achieve the noise suppressed for X ray small-signal and accurately process, there is simple in construction, circuit design is ingenious, industrial applications degree is high advantage.
Accompanying drawing explanation
Fig. 1 is the connection schematic diagram of the present invention.
Fig. 2 is the circuit connection diagram of the preposition current integration amplifying circuit of the present invention.
Fig. 3 is the circuit connection diagram of two grades of operational amplification circuits of the present invention.
Fig. 4 is the ATMEGA8 single chip circuit figure of embodiments of the invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described. Following example are only for clearly illustrating technical scheme, and can not limit the scope of the invention with this.
Fig. 1 is the connection schematic diagram of the present invention, the present invention proposes a kind of X-ray detector circuit, it is characterized in that, including photoelectric detector, X ray change-over circuit, single-chip microcomputer, display screen, photoelectric detector is connected with X ray change-over circuit, X ray change-over circuit is connected with single-chip microcomputer, and single-chip microcomputer is connected with display screen; Photoelectric detector is used for gathering X-ray signal, X ray change-over circuit is used for the optical signal collected being converted to the signal of telecommunication and being transferred to single-chip microcomputer, single-chip microcomputer is used for displaying being transferred in display screen after the Electric signal processing received, and display screen is used for showing the signal of telecommunication received; The model of display screen is LCD1602.
X ray change-over circuit includes preposition current integration amplifying circuit, two grades of operational amplification circuits, A/D change-over circuits, preposition current integration amplifying circuit and two grades of operational amplification circuits are connected, two grades of operational amplification circuits are connected with A/D change-over circuit, and A/D change-over circuit is connected with single-chip microcomputer.
Fig. 2 is the circuit connection diagram of the preposition current integration amplifying circuit of the present invention, preposition current integration amplifying circuit includes switch S1, switch S2, electric capacity C, operational amplifier A 1, switch S1 is connected with the reverse input end of operational amplifier A 1, switch S2 and electric capacity C is in parallel, one end of switch S2 and electric capacity C is connected with the reverse input end of operational amplifier A 1, and the other end of switch S2 and electric capacity C is connected with the outfan of operational amplifier A 1.
Fig. 3 is the circuit connection diagram of two grades of operational amplification circuits of the present invention, and two grades of operational amplification circuits include resistance R1, resistance R2, resistance RG, resistance RF, operational amplifier A 2, resistance R1With resistance R2It is in parallel, resistance R1With resistance R2One end connect reference voltage VREF, resistance R1With resistance R2One end be connected with the in-phase input end of operational amplifier A 2, resistance RGOne end connect preposition current integration amplifying circuit output VIN, resistance RGThe other end be connected with the inverting input of operational amplifier A 2, resistance RFOne end be connected with the inverting input of operational amplifier A 2, resistance RFThe other end be connected with the outfan of operational amplifier A 2.
Fig. 4 is the ATMEGA8 single chip circuit figure of embodiments of the invention, the model of single-chip microcomputer is ATMEGA8 single-chip microcomputer, ATMEGA8 single-chip microcomputer is 8 AVR microprocessors of a high-performance, low-power consumption, and analogue signal is changed by built-in A/D converter by its built-in transducer.
The above is only the preferred embodiment of the present invention; should be understood that; the content of failed call of the present invention protection is prior art; for those skilled in the art; under the premise without departing from the technology of the present invention principle; can also making some improvement and deformation, these improve and deformation also should be regarded as protection scope of the present invention.

Claims (6)

1. an X-ray detector circuit, it is characterized in that, including photoelectric detector, X ray change-over circuit, single-chip microcomputer, display screen, described photoelectric detector is connected with described X ray change-over circuit, described X ray change-over circuit is connected with described single-chip microcomputer, and described single-chip microcomputer is connected with described display screen; Described photoelectric detector is used for gathering X-ray signal, described X ray change-over circuit is used for the optical signal collected being converted to the signal of telecommunication and being transferred to described single-chip microcomputer, described single-chip microcomputer is used for displaying being transferred in described display screen after the Electric signal processing received, and described display screen is used for showing the signal of telecommunication received.
2. a kind of X-ray detector circuit according to claim 1, it is characterized in that, described X ray change-over circuit includes preposition current integration amplifying circuit, two grades of operational amplification circuits, A/D change-over circuits, described preposition current integration amplifying circuit is connected with described two grades of operational amplification circuits, described two grades of operational amplification circuits are connected with described A/D change-over circuit, and described A/D change-over circuit is connected with described single-chip microcomputer.
3. a kind of X-ray detector circuit according to claim 2, it is characterized in that, described preposition current integration amplifying circuit includes switch S1, switch S2, electric capacity C, operational amplifier A 1, described switch S1 is connected with the reverse input end of described operational amplifier A 1, described switch S2 and described electric capacity C is in parallel, described switch S2 is connected with the reverse input end of one end of described electric capacity C with described operational amplifier A 1, and described switch S2 is connected with the outfan of the other end of described electric capacity C with described operational amplifier A 1.
4. a kind of X-ray detector circuit according to claim 2, it is characterised in that described two grades of operational amplification circuits include resistance R1, resistance R2, resistance RG, resistance RF, operational amplifier A 2, described resistance R1With described resistance R2It is in parallel, described resistance R1With described resistance R2One end connect reference voltage VREF, described resistance R1With described resistance R2One end be connected with the in-phase input end of described operational amplifier A 2, described resistance RGOne end connect described preposition current integration amplifying circuit output VIN, described resistance RGThe other end be connected with the inverting input of described operational amplifier A 2, described resistance RFOne end be connected with the inverting input of described operational amplifier A 2, described resistance RFThe other end be connected with the outfan of described operational amplifier A 2.
5. a kind of X-ray detector circuit according to claim 1, it is characterised in that the model of described single-chip microcomputer is ATMEGA8 single-chip microcomputer.
6. a kind of X-ray detector circuit according to claim 1, it is characterised in that the model of described display screen is LCD1602.
CN201610108383.3A 2016-02-29 2016-02-29 X-ray detector circuit Pending CN105651794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610108383.3A CN105651794A (en) 2016-02-29 2016-02-29 X-ray detector circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610108383.3A CN105651794A (en) 2016-02-29 2016-02-29 X-ray detector circuit

Publications (1)

Publication Number Publication Date
CN105651794A true CN105651794A (en) 2016-06-08

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JPS63150955A (en) * 1986-12-15 1988-06-23 Hitachi Medical Corp Measuring circuit for x-ray ct apparatus
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JP2011234119A (en) * 2010-04-27 2011-11-17 Fujitsu Ltd Signal processing circuit and signal processing method
CN102519588A (en) * 2011-12-20 2012-06-27 江苏飞格光电有限公司 700-2800 nm picowatt level light energy detector circuit
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CN103633956A (en) * 2013-12-18 2014-03-12 浙江天地人科技有限公司 Charge amplifier
CN103698019A (en) * 2013-12-27 2014-04-02 电子科技大学 Reading circuit for infrared focal plane array detector
CN104075813A (en) * 2013-03-25 2014-10-01 精工爱普生株式会社 Infrared sensor and heat sensing element
CN104635253A (en) * 2014-11-26 2015-05-20 宋永东 X-ray energy spectrum data acquiring system
CN204498130U (en) * 2015-03-20 2015-07-22 深圳光启智能光子技术有限公司 Photoelectric switching circuit and optical signal receiver
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Patent Citations (15)

* Cited by examiner, † Cited by third party
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DD138727A1 (en) * 1978-09-21 1979-11-14 Dieter Mailand ELECTRONIC MAS RELAY FOR A ROYALTY DIAGNOSTIC APPARATUS
JPS63150955A (en) * 1986-12-15 1988-06-23 Hitachi Medical Corp Measuring circuit for x-ray ct apparatus
JPH08168482A (en) * 1994-12-20 1996-07-02 Toshiba Corp Ct scanner
CN1227926A (en) * 1997-11-28 1999-09-08 佳能株式会社 Radiation detecting device and radiation detecting method
JP2003259238A (en) * 2002-03-05 2003-09-12 Sharp Corp Charge detection circuit and lsi
JP2004147296A (en) * 2002-08-27 2004-05-20 Sharp Corp Charge detection circuit, and circuit constant design method thereof
JP2011234119A (en) * 2010-04-27 2011-11-17 Fujitsu Ltd Signal processing circuit and signal processing method
CN102525503A (en) * 2010-12-01 2012-07-04 富士胶片株式会社 Radiation image detecting device and drive control method thereof
CN102519588A (en) * 2011-12-20 2012-06-27 江苏飞格光电有限公司 700-2800 nm picowatt level light energy detector circuit
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Application publication date: 20160608