CN105648423A - Method for manufacturing novel resistance heating wire - Google Patents
Method for manufacturing novel resistance heating wire Download PDFInfo
- Publication number
- CN105648423A CN105648423A CN201610098477.7A CN201610098477A CN105648423A CN 105648423 A CN105648423 A CN 105648423A CN 201610098477 A CN201610098477 A CN 201610098477A CN 105648423 A CN105648423 A CN 105648423A
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- tungsten
- laser
- heater strip
- resistor heater
- tungsten powder
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
- C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
Abstract
The invention discloses a method for manufacturing a novel resistance heating wire. A tungsten metal substrate, micron-grade tungsten powder and high-emissivity nanometer materials are prepared; the micron-grade tungsten powder and the high-emissivity nanometer materials are added into a polyvinyl alcohol (PVA) water suspension, and the mixture is evenly stirred through a magnetic stirrer; the surface of the tungsten metal substrate is coated with the mixture of the micron-grade tungsten powder and the high-emissivity nanometer materials through an impregnation method, so that a coating is formed; then the mixture of the micron-grade tungsten powder and the high-emissivity nanometer materials is processed through a laser sintering technology, the coating on the surface of the tungsten metal substrate and the tungsten metal substrate are fused, the high-emissivity nanometer materials are integrated into tungsten metal, and a tungsten-based nanometer composite material is formed; afterwards, the tungsten-based nanometer composite material is processed through a laser shot blasting technology; and finally, the tungsten-based nanometer composite material obtained through the method is made into the resistance heating wire. The emissivity of the resistance heating wire manufactured through the method is greatly improved, the stability of the resistance heating wire working at high temperature is remarkably improved, the service life of the resistance heating wire working at high temperature is remarkably prolonged, and the resistance heating wire is suitable for metal organic chemical vapor deposition (MOCVD).
Description
Technical field
The invention belongs to resistance heating wire field, relate to a kind of Novel resistor heater strip manufacture method.
Background technology
Silicon carbide epitaxy, ultraviolet LED extension and other monocrystal materials need high growth temperature environment. Especially carbofrax material is a kind of high performance artificial material, there is the features such as high intensity, high heat conductance, high-wearing feature and corrosion resistance, it is widely used at industrial circles such as Aero-Space, automobile, mechano-electronic, chemical industry, is described as, by people, the material that God creates. The anti-wear performance of carborundum be cast iron, 5-20 times of rubber service life, Mohs' hardness is 9.5 grades, it is only second to diamond (10 grades) the hardest in the world, it is the very promising high-abrasive material of one that high rigidity and anti-wear performance determine carborundum, has been widely used as abrasive material at present for abrading glass, pottery, stone material, hard alloy, titanium alloy etc. But the growth needs temperature of carborundum is more than 1650 degree, the mode of heating adopted at present is the method that sensing is heated, but the method for sensing heating is a kind of Electromagnetic Heating, and the efficiency of heating surface is not high, and controls above to be difficult to accurately, equipment design complexity. And adopt the heating means of resistance wire or sheet, at present owing to the level of the emissivity of tungsten material is not high, it is heated to more than the 1400 degree difficulties deposited in design.
MOCVD(metallo-organic compound chemical gaseous phase deposition) it is the wide variety of semi-conducting material means of production; equipment especially as industrialized production; there is the excellent characteristics such as high stability, repeatability and scale, be the very promising monocrystal material production method of one. At present, MOCVD(metallo-organic compound chemical gaseous phase deposition) main mode of heating is to adopt Resistant heating, the conventional refractory metal material tungsten of this resistance wire manufactures, and has fusing point height, the advantage that resistivity is big, intensity good, steam forces down. But, the hardness of tungsten is big and crisp, and difficulty of processing strengthens, and common tungsten filament once will become very crisp after applied at elevated temperature generation recrystallization, very easily ruptures when being hit or shake.Under high-temperature work environment, tungsten enters plasticity, is substantially reduced the life-span of tungsten. Therefore the functional reliability of tungsten filament and life-span are all relatively low, and general tungsten filament needs annual replacing once, if material and structural design are bad, even within tens hours, are accomplished by changing to hundreds of hour, a tungsten filament value tens of thousands of dollars, costly. Owing to the average emitted rate of tungsten is likely to only smooth for 0.04(tungsten filament), or the aging tungsten filament of 0.032-0.35(), tungsten MOCVD operating temperature wiry is adopted to only have 1200 degrees centigrade at present, may be used for the growth of gallium nitride, carry out the growth of aluminium nitride, it is necessary to the temperature of MOCVD reaches 1400 degrees centigrade, if to carry out the growth of silicon nitride, need higher temperature, even more than 1700 degrees Celsius. So high growth temperature, if not improving the emissivity of tungsten, the temperature of tungsten body to reach more than 2000 degree, and the working life of tungsten can be substantially reduced, improve the working life of tungsten, it is therefore desirable to produce a kind of can high emissivity and in high temperature environments can the resistance heating wire of steady operation.
Summary of the invention
In order to solve above-mentioned technical problem, the invention provides a kind of Novel resistor heater strip that can be applicable to MOCVD, by tungsten metal basal board and high emissivity nano material are passed through laser sintering technology compound, then utilize Laser Peening Technology to carry out process and can obtain good reliability under hot conditions, emissivity is high, the Novel resistor wire material of life-span length, its concrete scheme is:
A kind of Novel resistor heater strip manufacture method, it is characterised in that comprise the following steps:
(1) tungsten metal basal board, micron order tungsten powder and high emissivity nano material are got out;
(2) micron order tungsten powder and high emissivity nano material are added in polyvinyl alcohol (PVA) water slurry, and utilize magnetic stirrer uniform;
(3) use infusion process that micron order tungsten powder and high emissivity nano material mixture are coated in tungsten metallic substrate surfaces and form coating;
(4) adopting laser sintering technology to process micron order tungsten powder and high emissivity nano material mixture, make the coating of tungsten metallic substrate surfaces and tungsten metal basal board merge, high emissivity nano material is integrated in tungsten metal, forms tungstenio nano composite material;
(5) utilize Laser Peening Technology that described tungstenio nano composite material is processed;
(6) the tungstenio nano composite material of said method gained is made resistance heating wire, namely complete the making of Novel resistor heater strip.
As improvement, described micron order tungsten powder average diameter is 50 nanometers-5 microns, and described high emissivity nano material is CNT, Graphene or graphene oxide.
As improvement, described polyvinyl alcohol (PVA) water slurry concentration is 3-5%(wt), to obtain better mixed effect.
As improvement, described micron order tungsten powder and high emissivity nano material mixture are coated in tungsten metallic substrate surfaces by spraying process or brushing method and form coating.
As improvement; described employing laser sintering technology processes micron order tungsten powder and high emissivity nano material mixture process is to carry out in the glass chamber of full noble gas; with protect sample in laser sintered process not oxidized; by controlling intensity and the scanning speed of laser, it is solid-state at the CNT that is maintained with making tungsten powder melt.
As improvement, the noble gas in the laser sintered process of described employing is nitrogen, and described laser is the combination of nanosecond laser, picosecond laser and femtosecond laser or three.
As improvement, described Laser Peening Technology adopts the combination of nanosecond laser, picosecond laser and femtosecond laser or three as the energy, and constraint intermediary made by the BK7 glass of HI high impact impedance;The surface of tungstenio nano composite material is protected with thin aluminium foil for sacrificial coatings layer.
As improvement, described tungsten metal basal board is tungsten tinsel.
The Novel resistor heater strip that said method prepares is adopted to can be used for needing in the MOCVD of long-time hot operation.
The medicine have the advantages that
Adopt the tungstenio nano composite material Novel resistor heater strip that the inventive method makes, by laser sintering technology, high emissivity nano material is integrated in common tungsten metal, the emissivity of resistive heater can be greatly improved, so that its stabilized operating temperature is obviously improved than traditional resistor silk, and the effectively save energy; Utilize Laser Peening Technology that tungstenio nano composite material is carried out intensive treatment simultaneously, making the resistive heater mechanical performance that the present invention makes outclass traditional resistor silk, being effectively improved job stability and the working life of resistive heater, thus saving production cost; With the resistive heater of the present invention be thermal source MOCVD can the material such as volume production of silicon carbide, and effectively reduce production cost.
Accompanying drawing explanation
Fig. 1 is that the tungstenio nano composite material sprayed carries out laser sintered schematic diagram;
Fig. 2 is the structural representation of laser sintered rear tungstenio nano composite material;
Fig. 3 is the schematic diagram that tungstenio nano composite material carries out laser peening.
1 micron order tungsten powder, 2 high emissivity nano materials, 3 tungsten metal basal boards, 4 tungstenio nano composite materials, 5 laser pulses, 6BK7 glass, 7 thin aluminium foils, 8 plasmas, 9 shock waves.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is illustrated.
As shown in drawings, the invention provides a kind of Novel resistor heater strip manufacture method, it is characterised in that comprise the following steps:
(1) getting out tungsten metal basal board 3, micron order tungsten powder 1 and high emissivity nano material 2, described micron order tungsten powder 1 average diameter is 50 nanometers-5 microns; Described high emissivity nano material 2 is the high-emissivity material such as CNT, Graphene, graphene oxide, and its black body emissivity reaches about 90%;
(2) micron order tungsten powder 1 and high emissivity nano material 2 are added in polyvinyl alcohol (PVA) water slurry, and utilize magnetic stirrer uniform, described polyvinyl alcohol (PVA) water slurry concentration is 3-5%(wt), its optium concentration is 4%(wt), to obtain better mixed effect;
(3) as it is shown in figure 1, use infusion process that micron order tungsten powder 1 and high emissivity nano material 2 mixture are coated in tungsten metal basal board 3 surface form coating;
(4) as shown in Figure 2, laser sintering technology is adopted to process micron order tungsten powder 1 and high emissivity nano material 2 mixture, the coating and the tungsten metal basal board 3 that make tungsten metal basal board 3 surface merge, and high emissivity nano material 2 is integrated in tungsten metal, form tungstenio nano composite material 4, described employing laser sintering technology processes micron order tungsten powder 1 and high emissivity nano material 2 mixture process is to carry out in the glass chamber of full nitrogen, with protect sample in laser sintered process not oxidized, described laser is nanosecond laser, the combination of picosecond laser and femtosecond laser or three, the fusing point of tungsten powder is about 3400 degrees Celsius, the fusing point of Graphene and graphene oxide is all more than 3800 degrees Celsius, the fusing point of CNT is about 4200 degrees Celsius, therefore can pass through to control intensity and the scanning speed of laser, it is solid-state at the CNT that is maintained with making tungsten powder melt.
(5) as it is shown on figure 3, utilize Laser Peening Technology that described tungstenio nano composite material 4 is processed; Described Laser Peening Technology adopts the combination of nanosecond laser, picosecond laser and femtosecond laser or three as the energy, and the BK7 glass 6 of HI high impact impedance is made the transparent covering layer of constraint intermediary; The surface of tungstenio nano composite material 4 is protected with thin aluminium foil 7 for sacrificial coatings layer; Setting gradually as thin aluminium foil 7 and BK7 glass 6 on the surface of tungstenio nano composite material 4, laser pulse 5 is through the BK7 glass 6 as transparent covering layer, and the thin aluminium foil 7 being taken as sacrificial coatings partially absorbs; Thin aluminium foil 7 reaches gasification temperature after absorbing laser energy, is formed plasma 8 by laser pulse 5 ionization subsequently; Plasma 8 is limited between tungstenio nano composite material 4 and BK7 glass 6; The plasma 8 of high pressure produces shock wave 9, propagates to BK7 glass 6 and tungstenio nano composite material 4, makes tungstenio nano composite material 4 produce plastic deformation; After laser peening, tungstenio nano composite material 4 produces the hardening of nearly Surface Machining and nearly surface residual stress, thus improving the mechanical performance of material.
(6) the tungstenio nano composite material 4 of said method gained is made resistance heating wire, namely complete the making of Novel resistor heater strip.
Described micron order tungsten powder 1 and high emissivity nano material 2 mixture are coated in tungsten metal basal board 3 surface also by spraying process or brushing method and form coating.
The Novel resistor heater strip that said method makes is utilized to can be used for needing in the MOCVD of long-time hot operation.
The right tungstenio nano composite material of Novel resistor heating wire that the present invention proposes is constituted, by laser sintering technology, the nano material of high emissivity is integrated in common tungsten metal, the emissivity of resistive heater can be greatly improved, so that its stabilized operating temperature is obviously improved than traditional resistor silk, and the effectively save energy; Utilizing Laser Peening Technology that tungstenio nano composite material is carried out intensive treatment simultaneously, make the mechanical performance of the resistive heater of the present invention outclass traditional resistor silk, being effectively improved job stability and the working life of resistive heater, thus saving production cost; With the resistive heater of the present invention be thermal source MOCVD can the material such as volume production of silicon carbide, and effectively reduce production cost.
Described above it is merely exemplary for the purpose of the present invention; and it is nonrestrictive; the understanding of those of ordinary skill in the art; when the spirit and scope limited without departing from claim; change can be made according to the disclosure above content, modify or equivalence, but fall within protection scope of the present invention.
Claims (9)
1. a Novel resistor heater strip manufacture method, it is characterised in that comprise the following steps:
(1) tungsten metal basal board (3), micron order tungsten powder (1) and high emissivity nano material (2) are got out;
(2) micron order tungsten powder (1) and high emissivity nano material (2) are added in polyvinyl alcohol (PVA) water slurry, and utilize magnetic stirrer uniform;
(3) use infusion process that micron order tungsten powder (1) and high emissivity nano material (2) mixture are coated in tungsten metal basal board (3) surface and form coating;
(4) laser sintering technology is adopted to process micron order tungsten powder (1) and high emissivity nano material (2) mixture, the coating and the tungsten metal basal board (3) that make tungsten metal basal board (3) surface merge, high emissivity nano material (2) is integrated in tungsten metal, forms tungstenio nano composite material (4);
(5) utilize Laser Peening Technology that described tungstenio nano composite material (4) is processed;
(6) the tungstenio nano composite material (4) of said method gained is made resistance heating wire, namely complete the making of Novel resistor heater strip.
2. a kind of Novel resistor heater strip manufacture method as claimed in claim 1, it is characterized in that, described micron order tungsten powder (1) average diameter is 50 nanometers-5 microns, and described high emissivity nano material (2) is CNT, Graphene or graphene oxide.
3. a kind of Novel resistor heater strip manufacture method as claimed in claim 1, it is characterised in that described polyvinyl alcohol (PVA) water slurry concentration is 3-5% (wt).
4. a kind of Novel resistor heater strip manufacture method as claimed in claim 1, it is characterized in that, described micron order tungsten powder (1) and high emissivity nano material (2) mixture are coated in tungsten metal basal board (3) surface by spraying process or brushing method and form coating.
5. a kind of Novel resistor heater strip manufacture method as claimed in claim 1; it is characterized in that; described employing laser sintering technology processes micron order tungsten powder (1) and high emissivity nano material (2) mixture process is to carry out in the glass chamber of full noble gas; with protect sample in laser sintered process not oxidized; by controlling intensity and the scanning speed of laser, it is solid-state at the CNT that is maintained with making tungsten powder melt.
6. a kind of Novel resistor heater strip manufacture method as claimed in claim 5, it is characterised in that the noble gas in the laser sintered process of described employing is nitrogen, and described laser is the combination of nanosecond laser, picosecond laser and femtosecond laser or three.
7. a kind of Novel resistor heater strip manufacture method as claimed in claim 1, it is characterized in that, described Laser Peening Technology adopts the combination of nanosecond laser, picosecond laser and femtosecond laser or three as the energy, and constraint intermediary made by the BK7 glass (6) of HI high impact impedance; The surface of tungstenio nano composite material (4) is protected with thin aluminium foil (7) for sacrificial coatings layer.
8. a kind of Novel resistor heater strip manufacture method as claimed in claim 1, it is characterised in that described tungsten metal basal board (3) is tungsten tinsel.
9. adopt the Novel resistor heater strip that the arbitrary described method of claim 1 to 8 prepares, it is characterised in that described Novel resistor heater strip is for needing in the MOCVD of long-time hot operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098477.7A CN105648423B (en) | 2016-02-23 | 2016-02-23 | Method for manufacturing resistance heating wire |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610098477.7A CN105648423B (en) | 2016-02-23 | 2016-02-23 | Method for manufacturing resistance heating wire |
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| CN105648423A true CN105648423A (en) | 2016-06-08 |
| CN105648423B CN105648423B (en) | 2017-02-08 |
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| CN201610098477.7A Active CN105648423B (en) | 2016-02-23 | 2016-02-23 | Method for manufacturing resistance heating wire |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108411296A (en) * | 2018-02-13 | 2018-08-17 | 上海楚越机械设备有限公司 | A kind of preparation method of stratie |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004076710A1 (en) * | 2003-02-26 | 2004-09-10 | Sumitomo Electric Industries, Ltd. | Amorphous carbon film, process for producing the same and amorphous carbon film-coated material |
| CN104226980A (en) * | 2014-07-29 | 2014-12-24 | 中国科学院重庆绿色智能技术研究院 | Method for enhancing laser energy absorption efficiency of metal powder material |
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2016
- 2016-02-23 CN CN201610098477.7A patent/CN105648423B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004076710A1 (en) * | 2003-02-26 | 2004-09-10 | Sumitomo Electric Industries, Ltd. | Amorphous carbon film, process for producing the same and amorphous carbon film-coated material |
| CN104226980A (en) * | 2014-07-29 | 2014-12-24 | 中国科学院重庆绿色智能技术研究院 | Method for enhancing laser energy absorption efficiency of metal powder material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108411296A (en) * | 2018-02-13 | 2018-08-17 | 上海楚越机械设备有限公司 | A kind of preparation method of stratie |
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| CN105648423B (en) | 2017-02-08 |
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