CN105633220A - All printing photoelectric detector on the basis of flexible substrate and preparation method thereof - Google Patents
All printing photoelectric detector on the basis of flexible substrate and preparation method thereof Download PDFInfo
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- CN105633220A CN105633220A CN201610203654.3A CN201610203654A CN105633220A CN 105633220 A CN105633220 A CN 105633220A CN 201610203654 A CN201610203654 A CN 201610203654A CN 105633220 A CN105633220 A CN 105633220A
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 claims abstract description 65
- 239000002002 slurry Substances 0.000 claims abstract description 34
- 238000007650 screen-printing Methods 0.000 claims abstract description 16
- 239000002070 nanowire Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
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- PPNKDDZCLDMRHS-UHFFFAOYSA-N dinitrooxybismuthanyl nitrate Chemical compound [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- -1 polyethylene terephthalate Polymers 0.000 claims description 7
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
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- 238000012360 testing method Methods 0.000 abstract description 15
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- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses an all printing photoelectric detector on the basis of flexible substrate and a preparation method thereof. The method comprises: a preparation step of bismuth sulfide nano wires and bismuth sulfide nano wire slurry, an electrode printing step and a slurry printing step. The all printing photoelectric detector on the basis of a flexible substrate obtains good photoconduction performances through photoconduction response tests with different wave bands and intensities, response speed tests at the irradiation of different frequency intermittent lights, a flexibility test and response speed tests of different printing figures at the irradiation of the frequency intermittent lights so as to indicate good performance of the all printing photoelectric detector on the basis of the flexible substrate. Besides, bismuth sulfide nano wires are simple to prepare, the flexible substrate may be fabrics such as cotton ramie silk and the like, may be also PET plastic, a silicon substrate and the like, and is flexible and good in wearing property, and the silk-screen printing technology is low in cost and easy for mass production. On the basis of the advantages mentioned above, the all printing photoelectric detector on the basis of a flexible substrate and the preparation method thereof have potential application values.
Description
Technical field
The present invention relates to a kind of photodetector, it is specifically related to a kind of full printing photodetector based on flexible substrates and its preparation method.
Background technology
Along with the development of nano structural material, it is also the following hot fields studied at present that nano structure deviceization application becomes, and the appearance of new nano semiconductor material has promoted the research and development of the photodetector based on nano material. The specific surface area that nano material is big and relatively little volume make the photodetector of nanostructure show the light responsing sensitivity of superelevation.
Bismuth sulfide is the direct band-gap semicondictor of V-VI race, and the energy gap under room temperature is 1.3eV, has a series of premium propertiess such as environmental friendliness, light volt conversion and intrinsic photoconduction. Bismuth sulfide nano line is the semiconductor nano material of one-dimentional structure, has good electricity and optical property due to it in recent years and receives much concern.
Flexible substrates have light weight, wearing quality good, can bend, the advantage such as low cost batch production, compared with silicon base or silica based, there is better biocompatibility, electrical insulating property and hot barrier property, thus it is widely used in optics, electronics, chemistry and the field such as medical. At present, the device research based on flexible substrates has become focus in academia, how low cost, simple making efficient, done with high accuracy flexible device be primary faced by problem.
Silk screen printing as one of four big printing processes, have that equipment is simple, simple operation, the feature such as with low cost, strong adaptability. At present, much research all utilize screen printing technique by wiring board and electrodes in substrate. The present invention intends successively utilizing screen printing technique to be printed onto in flexible substrates in elargol and the bismuth sulfide nano material slurry obtained respectively and realizes the full preparation printing photodetector, for preparing the thinking that the more excellent photodetector of performance provides new.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of full printing photodetector based on flexible substrates and its preparation method. The photodetector obtained by the method for the invention is with low cost, excellent property.
The present invention takes following technical scheme to achieve the above object:
1, based on the preparation method of full printing photodetector of flexible substrates, comprise the following steps:
1) bismuth sulfide nano line is prepared;
2) use tackiness agent is by step 1) gained bismuth sulfide nano line makes slurry; The mass ratio of aqueous binder and bismuth sulfide nano line is 1:7-8;
3) by silk screen printing, conductive silver glue is printed shape interdigitate electrode in a pair on a flexible substrate, dry;
4) by silk screen printing in step 3) obtained interdigitate electrode is coated with one layer of step 2) obtained bismuth sulfide nano line slurry, namely vacuum-drying obtain prints photodetector entirely.
Preferably, described step 1) in prepare bismuth sulfide nano line concrete steps comprise: by EDTA-Na2��Bi(NO3)3��5H2O, mercaptosuccinic acid are prepared into mixing solutions, and then mixing solutions is put into reactor 160 DEG C reaction 24h, and cooling, takes out filter, and washing, obtains bismuth sulfide nano line.
Preferably, described EDTA-Na2��Bi(NO3)3��5H2The mass ratio of O, mercaptosuccinic acid is 93:20:18.
Preferably, described step 2) in the mass ratio of aqueous binder and bismuth sulfide nano line be 1:7-8.
Preferably, described step 2) described in aqueous binder be LA133 or polyvinylidene difluoride (PVDF).
Preferably, described step 2) in prepare slurry concrete steps comprise: first the aqueous binder of proportional quantity is added water and stirs 30min, then step 1 is added while stirring) obtained bismuth sulfide nano wire material, continues to stir 10h and namely obtains bismuth sulfide nano line slurry; In described nano wire slurry, aqueous binder and bismuth sulfide total solid percentage composition are 50%.
Preferably, described step 2) in prepare slurry concrete steps comprise: by the aqueous binder of proportional quantity and bismuth sulfide nano line mixed grinding, grinding limit, limit dropwise adds N-Methyl pyrrolidone until aqueous binder and bismuth sulfide nano line mix forms bismuth sulfide nano line slurry.
Preferably, described step 3) in interdigitate interelectrode distance be 0.5mm.
Preferably, described flexible substrates is polyethylene terephthalate, polydimethylsiloxane, cotton, numb, silk goods or silicon base.
2, the full printing photodetector based on flexible substrates that above-mentioned preparation method obtains.
The useful effect of the present invention is: the present invention's hydrothermal method obtains bismuth sulfide nano line, and it is mixed with further the slurry that can carry out silk screen printing, successively adhere to silver electrode and bismuth sulfide nano material slurry on a flexible substrate by screen printing technique and prepare and entirely print photodetector. By photoconductive response test under different-waveband and varying strength of photodetector prepared by the present invention, response speed test under different frequency intermittent light irradiation, flexible test, the response speed test of different printing figure under intermittent light irradiates, all obtain good photoconductive property, show that flexible substrates prints photoelectric detector performance entirely good. In addition, bismuth sulfide nano line is prepared simple and easy, and flexible substrates both can be the fabrics such as linen-cotton silk, can be again PET, silicon base etc., can bend, wearing quality good, and screen printing technique is with low cost, being easy for scale operation, above advantage all makes the present invention have potential using value.
Accompanying drawing explanation
In order to make the object of the present invention, technical scheme and useful effect clearly, the present invention provides following accompanying drawing:
Fig. 1 prepares the process schematic diagram of full printing photo-sensor on a flexible substrate.
Fig. 2 bismuth sulfide nano line field emission scanning electron microscope figure, the field emission scanning electron microscope figure of A figure to be the field emission scanning electron microscope figure of bismuth sulfide nano line, B figure be single root bismuth sulfide nano line in figure.
Fig. 3 prints the scanning electron microscope (SEM) photograph in photodetector preparation process entirely, wherein A figure is the scanning electron microscope (SEM) photograph of flexible substrates, B figure is the scanning electron microscope (SEM) photograph after printing silver electrode in flexible substrates, C figure is at the scanning electron microscope (SEM) photograph with printing one layer of bismuth sulfide nano line slurry in the flexible substrates of silver electrode, and D figure is the side-view of full printing photodetector under scanning electron microscope.
Fig. 4 prints the photoresponse test philosophy figure of photodetector and the i-t graphic representation under different chopper disk rotational frequency thereof entirely, wherein, A figure is the photoresponse test schematic diagram of full printing photodetector, and B-D figure be that entirely to print photodetector be i-t graphic representation when 10Hz, 50Hz, 200Hz in chopper disk frequency respectively.
Fig. 5 prints the I-V curve figure of photodetector under the illumination of dark-state and different-waveband is penetrated down and the illumination of varying strength is penetrated entirely, wherein, A figure is the I-V curve figure penetrating lower full printing photodetector in dark-state and different-waveband illumination, B figure is the I-V curve figure penetrating lower full printing photodetector in dark-state and varying strength illumination.
Embodiment
Below the preferred embodiments of the present invention are described in detail. The experimental technique of unreceipted concrete condition in embodiment, usually conveniently condition or the condition advised according to manufacturer.
Embodiment 1
Based on the preparation method of the full printing photodetector of flexible substrates, comprise the following steps:
1) bismuth sulfide nano line is prepared: respectively by 930mgEDTA-Na2��200mgBi(NO3)3��5H2O, 180mg mercaptosuccinic acid successively dissolves in 50ml deionized water, then is shifted by above-mentioned mixing solutions in reactor that the tetrafluoroethylene into 50ml is interior courage, puts into baking oven, 160 DEG C of reaction 24h; Reaction makes reactor naturally cool to room temperature after terminating, and takes out the obtained material of filter collection and repeatedly rinses with deionized water and namely obtain bismuth sulfide nano line;
2) bismuth sulfide nano line slurry is prepared: by weight, polyvinylidene difluoride (PVDF): the ratio of bismuth sulfide nano wire material=1:8 takes aqueous binder and bismuth sulfide nano line, being blended in mortar by the two, grinding limit, limit is dropwise dripped in mortar and is added N-Methyl pyrrolidone until PVDF and bismuth sulfide nano line being mixed and forming bismuth sulfide nano line printing slurry;
3) electrode printing: the polydimethylsiloxane of cutting 4cm �� 5cm, and the interdigitate electrode by screen printing technique be printed on polydimethylsiloxane by elargol shape long 2.5cm, wide 2.5cm and spacing 0.5mm in a pair, dry 30min at putting into 100 DEG C, baking oven;
4) slurry printing: by step 2) the bismuth sulfide nano line slurry for preparing utilizes screen printing technique to be attached on the polydimethylsiloxane with interdigitate electrode, and at putting it into vacuum drying oven 30 DEG C, namely dry 4h obtains and entirely prints photodetector.
Embodiment 2
Based on the preparation method of the full printing photodetector of flexible substrates, comprise the following steps:
1) bismuth sulfide nano line is prepared: respectively by 930mgEDTA-Na2��200mgBi(NO3)3��5H2O, 180mg mercaptosuccinic acid successively dissolves in 50ml deionized water, then is shifted by above-mentioned mixing solutions in reactor that the tetrafluoroethylene into 50ml is interior courage, puts into baking oven, 160 DEG C of reaction 24h; Reaction makes reactor naturally cool to room temperature after terminating, and takes out the obtained material of filter collection and repeatedly rinses with deionized water and namely obtain bismuth sulfide nano line;
2) bismuth sulfide nano line slurry is prepared: by weight, aqueous binder (LA133): the ratio of bismuth sulfide nano wire material=1:7 takes aqueous binder and bismuth sulfide nano line, aqueous binder is added to the water after stirring 30min, progressively add bismuth sulfide nano material while stirring, continue to stir 10h and namely obtain bismuth sulfide nano line slurry; In described nano wire slurry, aqueous binder and bismuth sulfide total solid percentage composition are 50%;
3) electrode printing: the silk fabric of cutting 4cm �� 5cm, and the interdigitate electrode by screen printing technique be printed in silk fabric by elargol shape long 2.5cm, wide 2.5cm and spacing 0.5mm in a pair, dry 30min at putting into 100 DEG C, baking oven;
4) slurry printing: by step 2) the bismuth sulfide nano line slurry for preparing utilizes screen printing technique to be attached in the silk fabric with interdigitate electrode, and at putting it into vacuum drying oven 30 DEG C, namely dry 4h obtains and entirely prints photodetector.
Fig. 1 is the process schematic diagram that embodiment 1��2 prepares full printing photo-sensor on a flexible substrate.
Fig. 2 is embodiment 2 bismuth sulfide nano line field emission scanning electron microscope figure, the field emission scanning electron microscope figure of A figure to be the field emission scanning electron microscope figure of bismuth sulfide nano line, B figure be single root bismuth sulfide nano line in figure. Be wire by the figure known obtained bismuth sulfide nano wire material of A, B, long several microns, wide 80 arrive 400nm, smooth surface.
Fig. 3 is that embodiment 2 prints the scanning electron microscope (SEM) photograph in photodetector preparation process entirely, wherein A figure is the scanning electron microscope (SEM) photograph of flexible substrates, B figure is the scanning electron microscope (SEM) photograph after printing silver electrode in flexible substrates, C figure is at the scanning electron microscope (SEM) photograph with printing one layer of bismuth sulfide nano line slurry in the flexible substrates of silver electrode, and D figure is the side-view of full printing photodetector under scanning electron microscope. Compared to A figure, B figure is good with C figure surface electrode and material sticking power on a flexible substrate, reaches 80 ��m by the thickness of the figure known bismuth sulfide nano line slurry of D.
Fig. 4 is that embodiment 2 prints the photoresponse test philosophy figure of photodetector and the i-t graphic representation under different chopper disk rotational frequency thereof entirely, wherein, A figure is the photoresponse test schematic diagram of full printing photodetector, and B-D figure be that entirely to print photodetector be i-t graphic representation when 10Hz, 50Hz, 200Hz in chopper disk frequency respectively. Testing and complete when the xenon lamp of a sunlight intensity irradiates and do not apply external voltage, pulse incident light is from the twirl of chopper disk, and tests and carry out under air ambient, and surface sulfide bismuth nano-wire has good stability. As shown in the figure, obviously increase (test is from dark-state) than electric current during dark-state under having optical condition, and response speed is less than 2ms, illustrates that optical signal can be made rapid reaction by bismuth sulfide nano line, is prepare the good material of photo-sensor.
Fig. 5 is that embodiment 2 prints the I-V curve figure of photodetector under the illumination of dark-state and different-waveband is penetrated down and the illumination of varying strength is penetrated entirely, wherein, A figure is the I-V curve figure penetrating lower full printing photodetector in dark-state and different-waveband illumination, B figure is the I-V curve figure penetrating lower full printing photodetector in dark-state and varying strength illumination. In A figure, the intensity of each band of light is 2.35mWcm respectively-2(bluelaser),2.38mWcm-2(greenlaser),2.32mWcm-2(redlaser), voltage change is between-2V to 2V. Relatively dark-state and have the situation of white light it will be seen that the specific conductivity of full printing photo-sensor is significantly increased in A figure, it is clear that illumination can increase electronics the specific conductivity of bismuth sulfide nano line from valence to conduction band; In figure, I-V curve meets Ohm's law, and this resistance showing that in device, electrode and slurry itself and their connection cause is negligible. Scheme by B and illustration it will be seen that the specific conductivity of device depends on the increase of intensity of illumination and increases.
It should be noted that, in the present invention, concrete steps and the parameter of the preparation of bismuth sulfide nano line, the preparation of bismuth sulfide nano line slurry, screen printing electrode and slurry all can make corresponding adjustment by common practise.
What finally illustrate is, above preferred embodiment is only in order to illustrate the technical scheme of the present invention and unrestricted, although by above preferred embodiment to invention has been detailed description, but those skilled in the art are to be understood that, in the form and details it can be made various change, and do not deviate claims of the present invention limited range.
Claims (10)
1. based on the preparation method of full printing photodetector of flexible substrates, it is characterised in that, comprise the following steps:
1) bismuth sulfide nano line is prepared;
2) use tackiness agent is by step 1) gained bismuth sulfide nano line makes slurry;
3) by silk screen printing, conductive silver glue is printed shape interdigitate electrode in a pair on a flexible substrate, dry;
4) by silk screen printing in step 3) obtained interdigitate electrode is coated with one layer of step 2) obtained bismuth sulfide nano line slurry, namely vacuum-drying obtain prints photodetector entirely.
2. preparation method according to claim 1, it is characterised in that, described step 1) in prepare bismuth sulfide nano line concrete steps comprise: by EDTA-Na2��Bi(NO3)3��5H2O, mercaptosuccinic acid are prepared into mixing solutions, and then mixing solutions is put into reactor 160 DEG C reaction 24h, and cooling, takes out filter, and washing, obtains bismuth sulfide nano line.
3. preparation method according to claim 2, it is characterised in that, described EDTA-Na2��Bi(NO3)3��5H2The mass ratio of O, mercaptosuccinic acid is 93:20:18.
4. preparation method according to claim 1, it is characterised in that, described step 2) in the mass ratio of aqueous binder and bismuth sulfide nano line be 1:7-8.
5. preparation method according to claim 1, it is characterised in that, described step 2) described in aqueous binder be LA133 or polyvinylidene difluoride (PVDF).
6. preparation method according to claim 1, it is characterized in that, described step 2) in prepare slurry concrete steps comprise: first the aqueous binder of proportional quantity is added water and stirs 30min, then step 1 is added while stirring) obtained bismuth sulfide nano wire material, continues to stir 10h and namely obtains bismuth sulfide nano line slurry; In described nano wire slurry, aqueous binder and bismuth sulfide total solid percentage composition are 50%.
7. preparation method according to claim 1, it is characterized in that, described step 2) in prepare slurry concrete steps comprise: by the aqueous binder of proportional quantity and bismuth sulfide nano line mixed grinding, grinding limit, limit dropwise adds N-Methyl pyrrolidone until aqueous binder and bismuth sulfide nano line mix forms bismuth sulfide nano line slurry.
8. preparation method according to claim 1, it is characterised in that, described step 3) in interdigitate interelectrode distance be 0.5mm.
9. preparation method according to claim 1, it is characterised in that, described flexible substrates is polyethylene terephthalate, polydimethylsiloxane, cotton, numb, silk goods or silicon base.
10. the full printing photodetector based on flexible substrates that the described preparation method of the arbitrary item of claim 1��9 obtains.
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| CN201610203654.3A CN105633220B (en) | 2016-04-01 | 2016-04-01 | All print photodetector based on flexible substrates and preparation method thereof |
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| CN201610203654.3A CN105633220B (en) | 2016-04-01 | 2016-04-01 | All print photodetector based on flexible substrates and preparation method thereof |
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| CN105633220B CN105633220B (en) | 2017-10-24 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN109888031A (en) * | 2019-03-04 | 2019-06-14 | 哈尔滨工业大学（深圳） | A kind of preparation method and photodetector of bismuth oxygen sulphur two-dimensional material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106024923A (en) * | 2016-07-26 | 2016-10-12 | 南京工业大学 | All-carbon flexible light detector prepared through all-solution method and preparation method thereof |
| CN106024923B (en) * | 2016-07-26 | 2017-07-25 | 南京工业大学 | A kind of whole soln method prepares full carbon flexible optical detector and preparation method thereof |
| CN107785443A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof |
| CN108963081A (en) * | 2017-10-30 | 2018-12-07 | 上海幂方电子科技有限公司 | A kind of flexibility visible light sensor and its preparation process |
| CN109888031A (en) * | 2019-03-04 | 2019-06-14 | 哈尔滨工业大学（深圳） | A kind of preparation method and photodetector of bismuth oxygen sulphur two-dimensional material |
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| CN105633220B (en) | 2017-10-24 |
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