CN105633008B - A kind of preparation method of indium column, infrared focal plane array seeker - Google Patents
A kind of preparation method of indium column, infrared focal plane array seeker Download PDFInfo
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- CN105633008B CN105633008B CN201410624296.4A CN201410624296A CN105633008B CN 105633008 B CN105633008 B CN 105633008B CN 201410624296 A CN201410624296 A CN 201410624296A CN 105633008 B CN105633008 B CN 105633008B
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Abstract
The invention discloses a kind of indium column and preparation method thereof, the preparation method includes: A, the coating photoresist layer (20) on chip (10)；B, it is formed on photoresist layer (20) deposition hole (21)；C, metal and indium are sequentially depositing, bottom metal layer (30) and indium layer (41) are sequentially formed on photoresist layer (20), and sequentially form bottom metal layer (30) and indium column (42) in deposition hole (21)；D, photoresist layer (20) and bottom metal layer disposed thereon (30) and indium layer (41) are removed.The preparation method can shorten the process time of indium column preparation, improve working efficiency；The fragmentation that also can avoid the fragile samples such as the GaAs in device simultaneously, improves indium column yield rate.The invention also discloses application of the indium column prepared according to the preparation method in infrared focal plane array seeker, the indium column can avoid the problems such as pixel caused by wet stripping techniques is short-circuit, improve device performance.
Description
Technical field
The invention belongs to technical field of semiconductors, in particular, being related to a kind of preparation method of indium column, further relate to the indium column
Application in infrared focal plane array seeker.
Background technique
Infrared focal plane array is the core component of modern infrared imaging system, and manufacturing process includes infrared focus plane device
The flip-chip interconnection of the preparation of part, the preparation of reading circuit and device and circuit.Flip-chip interconnection generally uses the upside-down mounting of indium column mutual
Even, the success rate of interconnection is made to reach highest, the indium column for preparing high quality is particularly important.The preparation method of currently used indium column
It is thermal evaporation indium column combination wet stripping techniques, that is, passes through organic solvent or glue is gone to dissolve photoresist exposure mask, so that on exposure mask
Indium film separation, but indium is the metal of a kind of very " viscous ", is easy to appear photoresist and has dissolved, but indium film is counter to be adhered to
Phenomenon on chip adheres on chip once indium metal is counter, is difficult to strip down, and will lead to the problem of many pixel short circuits,
Seriously affect device performance；And wet stripping techniques, it generally first to be impregnated in solvent the regular hour, soaking time is general
More than 1 hour, then by solvent heating or ultrasonic vibration, promoting indium film to split and fall off, not only consuming time is long for this mode, and
And split Deng lethal damages are easy to appear for fragile materials such as GaAs in device, influence yield rate.
Summary of the invention
To solve the above-mentioned problems of the prior art, the present invention provides a kind of preparation method of indium column, the preparation sides
Method can shorten the process time of indium column preparation, while the yield rate of indium column can be improved.
In order to achieve the above object of the invention, present invention employs the following technical solutions:
A kind of preparation method of indium column, comprising steps of A, the coating photoresist layer on chip；B, on the photoresist layer
Form deposition hole；C, it is sequentially depositing metal and indium, bottom metal layer and indium layer are sequentially formed on the photoresist layer, and described
Bottom metal layer and indium column are sequentially formed in deposition hole；D, the photoresist layer and bottom metal layer and indium disposed thereon are removed
Layer.
Further, in the step D, the indium layer is removed by adhesive patches.
Further, the specific method of the step B includes: to be exposed by UV mask, the shape on the photoresist layer
At deposition hole.
Further, the cross sectional shape of the deposition hole is trapezoidal, wherein the table of the trapezoidal side wall and the chip
The angle in face is not more than 90 °.
Further, the specific method of the step C includes: the method belonged to first using electron beam evaporation down payment, then
Using the method for thermal evaporation indium, bottom metal layer and indium layer are sequentially formed on the photoresist layer, and in the deposition hole according to
Secondary formation bottom metal layer and indium column.
Further, the bottom metal layer includes adhesiving metal, barrier metal and infiltration metal；Wherein, the down payment category
The sedimentary sequence of layer is followed successively by adhesiving metal, barrier metal and infiltration metal, and the adhesiving metal includes titanium, any one in nickel
Kind, the barrier metal includes platinum, and the infiltration metal includes gold.
Further, the bottom metal layer includes adhesiving metal and infiltration metal；Wherein, the deposition of the bottom metal layer is suitable
Sequence is followed successively by adhesiving metal and infiltration metal, and the adhesiving metal includes titanium, any one in nickel, and the infiltration metal includes
Gold.
Further, the adhesive patches include adhesive tape.
Further, in the step D, after removing the indium layer, chip is immersed in peptizing agent, described in removal
Bottom metal layer on photoresist layer and the photoresist layer forms the indium column on the chip.
Another object of the present invention, which also resides in, provides a kind of infrared focal plane array seeker, includes at least infrared focus plane
Device and reading circuit, the flip-chip interconnection between the infrared focal plane device and the reading circuit use above-mentioned preparation side
Indium column prepared by method.
The preparation method of indium column of the invention is kept away compared to currently used thermal evaporation indium column combination wet stripping techniques
The negative effect of wet stripping techniques bring is exempted from；Preparation method according to the present invention is by removing indium layer using adhesive patches
Method prepares indium column, can shorten the process time of indium column preparation, improves working efficiency；Meanwhile the preparation method does not have to ultrasound, adds
The methods of heat is removed, and also be can avoid the fragmentation of the fragile samples such as the GaAs in device, is improved indium column yield rate.
Detailed description of the invention
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing:
Fig. 1 is the flow chart of the preparation method of the indium column of embodiment according to the present invention；
Fig. 2 is the structural schematic diagram of step 110 in the preparation method of the indium column of embodiment according to the present invention；
Fig. 3 is the structural schematic diagram of step 120 in the preparation method of the indium column of embodiment according to the present invention；
Fig. 4 is the structural schematic diagram of step 130 in the preparation method of the indium column of embodiment according to the present invention；
Fig. 5 is the structural schematic diagram of step 140 in the preparation method of the indium column of embodiment according to the present invention；
Fig. 6 is the structural schematic diagram of step 150 in the preparation method of the indium column of embodiment according to the present invention；
Fig. 7 is the structural schematic diagram of step 160 in the preparation method of the indium column of embodiment according to the present invention.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, for the sake of clarity, element can be exaggerated
Shape and size, and identical label will be used to indicate the same or similar element always.
Fig. 1 is the flow chart of the preparation method of the indium column of embodiment according to the present invention.
Referring to Fig.1, in step 110, the coating photoresist layer 20 on chip 10.The specific method of the step please refers to figure
2。
Wherein, the thickness of photoresist layer 20 is not smaller than the height of pre-prepared indium column 42.
In the step 120, deposition hole 21 is formed on photoresist layer 20.
The specific method of step 120 includes: to be exposed by UV mask, and deposition hole 21, ginseng are formed on photoresist layer 20
According to Fig. 3.Wherein, in order to be conducive to the removing of subsequent indium layer 41, the cross sectional shape of deposition hole 21 is rectangle or trapezoidal, and the ladder
The angle on the surface of the side wall and chip 10 of shape is not more than 90 °；That is, when the cross sectional shape of deposition hole 21 is trapezoidal, institute
State the surface that chip 10 is closed in trapezoidal bottom, and trapezoidal upper bottom is towards the open end of deposition hole 21.In the present embodiment, it sinks
The shape in the section in product hole 21 is rectangle, but the present invention is not restricted to this.
In step 130, it is sequentially depositing metal and indium, bottom metal layer 30 and indium layer are sequentially formed on photoresist layer 20
41, and bottom metal layer 30 and indium column 42 are sequentially formed in deposition hole 21.Referring to Fig. 4.Specifically, electron beam evaporation is used first
The method that down payment belongs to, the method for then using thermal evaporation indium, deposited metal and indium on photoresist layer 20 and in deposition hole 21,
Bottom metal layer 30 and indium layer 41 are sequentially formed on photoresist layer 20, and bottom metal layer 30 and indium column are sequentially formed in deposition hole 21
42；Wherein, bottom metal layer 30 includes at least adhesiving metal and infiltration metal, may also comprise barrier metal, and bottom metal layer 30
Sedimentary sequence is followed successively by adhesiving metal and infiltration metal or adhesiving metal, barrier metal and infiltration metal.Preferably, adherency gold
Belong to and can be titanium, any one in nickel, barrier metal is platinum, and infiltration metal is gold.In the present embodiment, bottom metal layer 30 wraps
Include adhesiving metal titanium and infiltration metallic gold.
Bottom metal layer 30 is deposited between indium column 42 and chip 10 mainly following three effects: a, enhancing chip 10 and indium
Adherency between column 42；B, indium column 42 is stopped to migrate to chip 10；And c, indium column 42 is infiltrated, to complete to be electrically connected.
In step 140, adhesive patches 50 are covered in indium layer 41.
Specifically, the chip 10 with indium layer 41 is fixed first, adhesive patches 50 is then covered in indium layer 41.
The specific method of the step is referring to Fig. 5.In the present embodiment, the back side of the chip 10 with indium layer 41, which is absorbed and fixed at, has very
On the attached sample stage 60 of suction, i.e., there is the one side of indium layer 41 to expose chip 10, and sample stage 60 and chip 10 have indium layer
41 opposite is fixed on one side.Preferably, it when the one side with indium layer 41 of chip 10 covers adhesive patches 50, can use
Idler wheel applies certain pressure in adhesive patches 50, to ensure that adhesive patches 50 can be fitted closely with indium layer 41, after convenient
The removing together of continuous indium layer 41 and adhesive patches 50.In the present embodiment, adhesive patches 50 are adhesive tape, but the present invention is not intended to limit
In this, other materials with similar performance.
In step 150, adhesive patches 50 are removed, wherein indium layer 41 is stripped together, referring to Fig. 6.
It should be noted that when covering adhesive patches 50 in step 140, if respective regions are due to adhesive patches 50 and indium
There is bubble in fitting in layer 41, and when the indium layer 41 on photoresist layer 10 cannot be completely exfoliated, it can be repeated several times and shelled
From until without extra indium layer 41 on photoresist layer 10.
In a step 160, the bottom metal layer 30 on the photoresist layer 20 and photoresist layer 20 in step 150, chip are removed
Indium column 42 is formed on 10, referring to Fig. 7.The specific method of the step includes: after removing indium layer 41, by the chip in step 150
10 are immersed in peptizing agent, remove the photoresist layer 20 on peptizing agent dissolution chip 10, remove photoresist layer 20 and bottom thereon
Thus metal layer 30 forms indium column 42 on chip 10.
The preparation method of embodiment according to the present invention prepares indium column by the method for removing indium layer using adhesive patches,
It avoids using wet stripping techniques, on the one hand can shorten the process time of indium column preparation, improve working efficiency；On the other hand it avoids
It is removed using the methods of ultrasound, heating, the fragmentation of the fragile samples such as the GaAs in device can be prevented, improve indium column finished product
Rate.
The indium column that the preparation method of embodiment according to the present invention is prepared can be applicable to infrared focal plane array detection
In device, specifically, which includes at least infrared focal plane device and reading circuit, and infrared burnt flat
The manufacturing process of face array includes the preparation of infrared focal plane device, the preparation of reading circuit and the upside-down mounting of device and circuit
Interconnection；Generally, flip-chip interconnection techniques use the flip-chip interconnection of indium column；Upside-down mounting between infrared focal plane device and reading circuit
Interconnection can avoid pixel short circuit caused by wet stripping techniques etc. and asked using indium column prepared by preparation method according to the present invention
Topic improves device performance.
Although the present invention has shown and described referring to specific embodiment, it should be appreciated by those skilled in the art that:
In the case where not departing from the spirit and scope of the present invention being defined by the claims and their equivalents, can carry out herein form and
Various change in details.
Claims (9)
1. a kind of preparation method of indium column, which is characterized in that comprising steps of
A, the coating photoresist layer (20) on chip (10)；
B, it is formed on the photoresist layer (20) deposition hole (21)；
C, it is sequentially depositing metal and indium, bottom metal layer (30) and indium layer (41) are sequentially formed on the photoresist layer (20), and
Bottom metal layer (30) and indium column (42) are sequentially formed in the deposition hole (21)；The bottom metal layer (30) includes adhesiving metal
With infiltration metal；Wherein, the sedimentary sequence of the bottom metal layer (30) is followed successively by adhesiving metal and infiltration metal, the adherency gold
Belong to including any one in titanium, nickel, the infiltration metal includes gold；
D, the photoresist layer (20) and bottom metal layer disposed thereon (30) and indium layer (41) are removed.
2. the preparation method of indium column according to claim 1, which is characterized in that in the step D, pass through adhesive patches
(50) indium layer (41) are removed.
3. the preparation method of indium column according to claim 1, which is characterized in that the specific method of the step B includes: logical
UV mask exposure is crossed, forms deposition hole (21) on the photoresist layer (20).
4. the preparation method of indium column according to claim 1 or 3, which is characterized in that the section shape of the deposition hole (21)
Shape is trapezoidal, wherein the angle on the surface of the trapezoidal side wall and the chip (10) is not more than 90 °.
5. the preparation method of indium column according to claim 1, which is characterized in that the specific method of the step C includes: head
The method first belonged to using electron beam evaporation down payment, the method for then using thermal evaporation indium, on the photoresist layer (20) successively
Bottom metal layer (30) and indium layer (41) are formed, and sequentially forms bottom metal layer (30) and indium column in the deposition hole (21)
(42)。
6. the preparation method of indium column according to claim 1 or 5, which is characterized in that the bottom metal layer (30) includes viscous
Attached metal, barrier metal and infiltration metal；Wherein, the sedimentary sequence of the bottom metal layer (30) is followed successively by adhesiving metal, stops
Metal and infiltration metal, the adhesiving metal include titanium, any one in nickel, and the barrier metal includes platinum, the infiltration
Metal includes gold.
7. the preparation method of indium column according to claim 2, which is characterized in that the adhesive patches (50) include adhesive tape.
8. the preparation method of indium column according to claim 1, which is characterized in that in the step D, removing the indium layer
(41) after, chip (10) is immersed in peptizing agent, is removed on the photoresist layer (20) and the photoresist layer (20)
Bottom metal layer (30) forms the indium column (42) on the chip (10).
9. a kind of infrared focal plane array seeker includes at least infrared focal plane device and reading circuit, which is characterized in that institute
The flip-chip interconnection between infrared focal plane device and the reading circuit is stated using indium column prepared by claim 1 method.
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| CN201410624296.4A CN105633008B (en) | 2014-11-06 | 2014-11-06 | A kind of preparation method of indium column, infrared focal plane array seeker |
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| CN201410624296.4A CN105633008B (en) | 2014-11-06 | 2014-11-06 | A kind of preparation method of indium column, infrared focal plane array seeker |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816392A (en) * | 2016-12-07 | 2017-06-09 | 西南技术物理研究所 | Focal plane detector indium column plasma backflow pelletizing method |
| CN106653945A (en) * | 2016-12-12 | 2017-05-10 | 中国电子科技集团公司第十研究所 | Method for obtaining indium balls of readout circuit |
| CN108257984A (en) * | 2017-11-30 | 2018-07-06 | 武汉高芯科技有限公司 | Focal plane array detector and preparation method thereof |
| US10504777B2 (en) | 2018-02-13 | 2019-12-10 | Raytheon Company | Method of manufacturing wafer level low melting temperature interconnections |
| CN110444607B (en) * | 2019-07-10 | 2021-01-01 | 中国科学院上海技术物理研究所 | Large-scale indium gallium arsenic focal plane detector with stress balance layer and preparation method |
| CN112645276B (en) * | 2020-03-06 | 2024-02-09 | 腾讯科技（深圳）有限公司 | Indium column and preparation method thereof |
| CN111584672B (en) * | 2020-04-23 | 2021-12-24 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Indium column of infrared focal plane detector and preparation method thereof |
| CN111755572B (en) * | 2020-06-24 | 2022-06-28 | 中国电子科技集团公司第十一研究所 | Method for preparing indium salient point of infrared detector reading circuit and prepared reading circuit |
| CN112466765A (en) * | 2020-11-26 | 2021-03-09 | 安徽光智科技有限公司 | Focal plane array flip interconnection process method and focal plane array detector |
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| CN101118886A (en) * | 2007-08-22 | 2008-02-06 | 中国科学院上海技术物理研究所 | Composite indium column for infrared focal plane device and process for producing the same |
| CN102136484A (en) * | 2010-11-26 | 2011-07-27 | 中国科学院上海技术物理研究所 | Indium columns for face-down bonding interconnection of infrared focal plane and preparation method thereof |
| CN103227214A (en) * | 2013-04-16 | 2013-07-31 | 中国电子科技集团公司第十一研究所 | Metallization structure of compound semiconductor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101118886A (en) * | 2007-08-22 | 2008-02-06 | 中国科学院上海技术物理研究所 | Composite indium column for infrared focal plane device and process for producing the same |
| CN102136484A (en) * | 2010-11-26 | 2011-07-27 | 中国科学院上海技术物理研究所 | Indium columns for face-down bonding interconnection of infrared focal plane and preparation method thereof |
| CN103227214A (en) * | 2013-04-16 | 2013-07-31 | 中国电子科技集团公司第十一研究所 | Metallization structure of compound semiconductor |
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