CN105632589A - High heat storage crystal silicon solar back electrode silver paste and preparation method therefor - Google Patents
High heat storage crystal silicon solar back electrode silver paste and preparation method therefor Download PDFInfo
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- CN105632589A CN105632589A CN201610156703.2A CN201610156703A CN105632589A CN 105632589 A CN105632589 A CN 105632589A CN 201610156703 A CN201610156703 A CN 201610156703A CN 105632589 A CN105632589 A CN 105632589A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 60
- 239000004332 silver Substances 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000005338 heat storage Methods 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 42
- 239000011230 binding agent Substances 0.000 claims abstract description 37
- 229910003069 TeO2 Inorganic materials 0.000 claims abstract description 7
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 59
- 239000000203 mixture Substances 0.000 claims description 31
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000001856 Ethyl cellulose Substances 0.000 claims description 12
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 12
- 239000013543 active substance Substances 0.000 claims description 12
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 12
- 229920001249 ethyl cellulose Polymers 0.000 claims description 12
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 12
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 12
- 239000000020 Nitrocellulose Substances 0.000 claims description 10
- 229920001220 nitrocellulos Polymers 0.000 claims description 10
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 9
- 235000019439 ethyl acetate Nutrition 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 9
- 238000009738 saturating Methods 0.000 claims description 9
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 235000011837 pasties Nutrition 0.000 claims description 6
- 238000010298 pulverizing process Methods 0.000 claims description 6
- 238000005096 rolling process Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 239000004166 Lanolin Substances 0.000 claims description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 3
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 3
- 229940039717 lanolin Drugs 0.000 claims description 3
- 235000019388 lanolin Nutrition 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 2
- 239000002003 electrode paste Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 206010013786 Dry skin Diseases 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses high heat storage crystal silicon solar back electrode silver paste and a preparation method therefor. The silver paste contains the following components in percentage by weight: 2-6% of inorganic glass powder, 48-53% of silver powder and 41-51% of an organic binder. According to the silver paste and the preparation method, the design is deft; TeO2 is added into the inorganic glass powder for improvement, so that the shortcoming that back electrode paste is not resistant to baking is overcome and the tensile force is greater than 2N after the paste is baked in a baking oven at 150 DEG C for 2 hours; and the silver paste has high heat storage performance, so that the service life of cells is prolonged and the heat storage requirement in the market is met.
Description
Technical field
The present invention relates to a kind of back electrode silver slurry and its preparation method, particularly relate to a kind of high heat storage crystal silicon solar back electrode silver slurry and its preparation method.
Background technology
Sun power generating directly solar radiant energy is converted to electric energy, is in all clean energies, the conversion links of sun power is minimum, the most direct mode of utilization. At present, main solar cell is crystal silicon solar energy battery. Owing to crystal solar cell is higher than the cost of tradition generating so that it is install application and receive certain restriction, still can not become main stream within following for some time. The electricity conversion improving solar cell and the cost reducing solar cell are the Main way of following crystal silicon solar batteries development.
Back electrode silver slurry is a kind of important auxiliary material preparing crystal silicon solar energy battery, usually adopts silk-screen printing technique to be printed and is sintered in cell backside, as back electrode. Back electrode silver slurry needs to have good electroconductibility, printing performance, weldability. Back electrode silver slurry is primarily of conductive phase silver powder, unorganic glass powder, organic binder bond composition. Wherein silver powder is conducting medium; Unorganic glass powder melts when high temperature sintering, forms ohmic contact between silver powder and silicon base; Organic binder bond mainly plays dispersion and package action, is wrapped up uniformly by silver powder particles so that the silver powder in conductive silver paste is not easy to produce precipitation and oxidation.
Before, the performance of back electrode silver slurry is often weighed with indexs such as sticking power, weldability, soldering resistance, consumption amounts by cell piece factory. Present many cell piece factories can propose storage heat request, i.e. 150 DEG C of baking oven baking 0.5-1h, and pulling force is not less than 2-3N. The existing back silver paste in market is still in lower level in high heat storage, causes cell piece condemnation factor height, and the life-span of battery component is short, and in this and back silver paste, the kind of chemical composition and proportioning have very big relation.
Summary of the invention
It is an object of the invention to overcome the deficiency of prior art existence, it is provided that a kind of high heat storage crystal silicon solar back electrode silver slurry and its preparation method.
The object of the present invention is achieved through the following technical solutions:
A kind of high heat storage crystal silicon solar back electrode silver slurry, it comprises the unorganic glass powder of specified wt per-cent, silver powder and organic binder bond, wherein, the weight percent of unorganic glass powder is 2-6wt%, the weight percent of silver powder is 48-53wt%, and the weight percent of organic binder bond is 41-51wt%.
Preferably, described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: described unorganic glass powder comprises following weight percent composition: SiO2: 4-20wt%, Bi2O3: 40-60wt%, BaO:0-20wt%, ZnO:2-12wt%, B2O3: 6-15wt%, Li2O:1-8wt%, Al2O3: 2-35wt%, TeO2: 1-20wt%.
Preferably, described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: the median size of described unorganic glass powder is 0.1-2 ��m.
Preferably, described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: described silver powder is the mixture of spherical silver powder and flake silver powder, wherein the purity > 99.90%, D50 of spherical silver powder is 0.2-4 ��m; The purity > 99.90%, D50 of flake silver powder is 2.0-20 ��m.
Preferably, described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: described organic binder bond comprises following weight percent composition: organic resin: 2-15wt%, organic solvent: 80-95wt%, tensio-active agent: 0.5-5wt%.
Preferably, described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: described organic resin is the combination of one or more in ethyl cellulose, Nitrocellulose, Synolac; Described organic solvent is the combination of one or more in the saturating alcohol of turps, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetic ester, propyl carbinol, ethylene glycol monobutyl ether, ethylene glycol phenyl ether; Described tensio-active agent is the combination of one or more in Yelkin TTS, department class, lanolin.
Preferably, described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: described organic resin is the mixture that ethyl cellulose, Nitrocellulose are formed according to specified wt per-cent; Described tensio-active agent is class of department.
A preparation method for high heat storage crystal silicon solar back electrode silver slurry, it comprises the steps:
S1, prepare unorganic glass powder: mixed by the raw material of specified wt per-cent and be placed in high temperature resistance furnace, in the molten 0.5-1.5h of 900-1400 DEG C of heat, take out rear shrend, pulverizing, ball milling, sieve, after the first temperature a drying, sieve and obtain specifying the unorganic glass powder of median size;
S2, prepare organic binder bond: add in container by the organic solvent of specified wt per-cent, the organic resin of specified wt per-cent is added under whipped state, it is warming up to the 2nd temperature b, cool to the 3rd temperature c after the insulation T1 time, and filter after adding the tensio-active agent of specified wt per-cent and obtain organic binder bond;
S3, preparation silver slurry: according to composition proportion, by silver powder, unorganic glass powder, organic binder bond mixing, adjusts into pasty state, is ground to slurry fineness with three-roller rolling and is less than 12 ��m, and viscosity is the high heat storage crystal silicon solar batteries back electrode silver slurry of 35-70Pa S.
Preferably, the preparation method of described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: described first temperature a is 60-90 DEG C, the 2nd temperature is 80-100 DEG C, and the 3rd temperature is 40-50 DEG C.
Preferably, the preparation method of described a kind of high heat storage crystal silicon solar back electrode silver slurry, wherein: the described T1 time is 0.5-1.5h.
The substantive distinguishing features of technical solution of the present invention and progress are mainly reflected in:
1. inventive design is exquisite, by adding tellurium oxide TeO at unorganic glass powder2Improving, overcome the shortcoming of the not resistance to baking of back electrode slurry, after 150 DEG C of baking oven baking 2h, pulling force > 2N, has high heat storage performance, thus improves the work-ing life of cell piece, meets the requirement for storage heat on market.
2. the present invention adopts spherical silver powder and flake silver powder used in combination, it is to increase the conductivity of silver electrode, it is ensured that back of the body silver still has good electricity conversion under low silver content, and product application of the present invention electricity conversion on solar cell is not less than 18%.
3. the processing raw material of the present invention is easy to obtain, and not containing element and the compound of the poisonous and harmfuls such as lead, meets European Union's RoHS, Reach regulation and domestic industry standard, and tooling cost is low, and the course of processing is easy to control, simple operation.
Embodiment
Just the present invention program is described further below:
A kind of high heat storage crystal silicon solar back electrode silver slurry that the present invention discloses, comprising the unorganic glass powder of specified wt per-cent, silver powder and organic binder bond, wherein, described unorganic glass powder melts in high-temperature sintering process, silver powder is attached to silicon chip surface, forms the conducting film of even compact; Described silver powder is conducting function phase in the slurry, and it can form ohmic contact with silicon after high temperature sintering processes, and plays electric action in the electrodes; Described organic binder bond plays cohesive action when dissemination and printing, makes inorganic powder be dispersed in slurry, forms a kind of stable suspensoid, keeps the proportioning of each component in slurry; Slurry is made to be attached to silicon chip surface after printing.
Owing to the various performance of conductive silver paste and the content of its composition and each composition are closely bound up, difference that is not congruent and each component content must cause the performance of the conductive silver paste formed to there is larger difference, therefore, a kind of high heat storage crystal silicon solar back electrode silver slurry that contriver draws through countless experiments and long-term thinking research, its concrete composition and content are as follows:
Concrete, the weight percent of described unorganic glass powder is 2-6wt%, and described unorganic glass powder comprises following weight percent composition: SiO2: 4-20wt%, Bi2O3: 40-60wt%, BaO:0-20wt%, ZnO:2-12wt%, B2O3: 6-15wt%, Li2O:1-8wt%, Al2O3: 2-35wt%, TeO2: 1-20wt%, and the median size of described unorganic glass powder is 0.1-2 ��m.
Owing to the fusing point of tellurium oxide is lower, the glass of formation has high dielectric constant and high stability, it is possible to keep out external conditions to the erosion of glass structure, so after baking 2h, moreover it is possible to ensure certain pulling-out force.
Further, the weight percent of described silver powder is 48-53wt%, and due to the relation of the silver shape of particulate and conductivity very close, spherical particulate is the contact of point each other, and flaky particles just can the contact in forming surface and face, after printing, the particulate of sheet is mutually overlapping in fish scale shape when certain thickness, thus show good conductivity, therefore described silver powder is the mixture of spherical silver powder and flake silver powder, and their combination can ensure to print integrity and the tight type that rear silver powder connects; Meanwhile, owing to the size of silver particulate is relevant with the conductivity of silver slurry, under identical volume, particulate is big, and the contact probability between particulate is on the low side, and leaves bigger space, occupied by idioelectric resin, thus being formed by conductor particulate and intercept, conductivity declines; Otherwise, the contact probability of fine particles improves, and conductivity improves, and therefore in the present invention, the purity > 99.90%, D50 of spherical silver powder is 0.2-4 ��m; The purity > 99.90%, D50 of flake silver powder is 2.0-20 ��m.
Further, the weight percent of described organic binder bond is 41-51wt%, and owing to conductive silver paste is to the selection of organic binder bond, has many-sided consideration, and the viscosity of different organic binder bond, coherency, tack, thermal property etc. have bigger difference. The physicochemical property of base material that the producer of conductive silver paste acts on for conductive silver paste, condition of cure, film forming matter all needs to make overall plans, in the present invention, described organic binder bond comprises following weight percent composition: organic resin 2-15wt%, organic solvent 80-95wt%, tensio-active agent 0.5-5wt%.
Wherein, described organic resin is the combination of one or more in ethyl cellulose, Nitrocellulose, Synolac; Described organic solvent is the combination of one or more in the saturating alcohol of turps, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetic ester, propyl carbinol, ethylene glycol monobutyl ether, ethylene glycol phenyl ether; Described tensio-active agent is the combination of one or more in Yelkin TTS, department class, lanolin; Preferably, described organic resin is the mixture that ethyl cellulose, Nitrocellulose are formed according to specified wt per-cent; Described tensio-active agent is class of department.
Further, present invention further teaches the preparation method of a kind of high heat storage crystal silicon solar back electrode silver slurry, comprise the steps:
S1, prepare unorganic glass powder: mixed by the raw material of specified wt per-cent and be placed in high temperature resistance furnace, in the molten 0.5-1.5h of 900-1400 DEG C of heat, take out rear shrend, pulverizing, ball milling, sieve, after the first temperature a drying, sieve and obtain specifying the unorganic glass powder of median size; Described first temperature a is 60-90 DEG C,
S2, prepare organic binder bond: add in container by the organic solvent of specified wt per-cent, the organic resin of specified wt per-cent is added under whipped state, it is warming up to the 2nd temperature b, cool to the 3rd temperature c after the insulation T1 time, and filter after adding the tensio-active agent of specified wt per-cent and obtain organic binder bond; 2nd temperature b is 80-100 DEG C, and the 3rd temperature c is 40-50 DEG C, and the described T1 time is 0.5-1.5h.
S3, preparation silver slurry: according to composition proportion, by silver powder, unorganic glass powder, organic binder bond mixing, adjusts into pasty state, is ground to slurry fineness with three-roller rolling and is less than 12 ��m, and viscosity is the high heat storage crystal silicon solar batteries back electrode silver slurry of 35-70Pa S.
Certainly, above-mentioned S1, prepares unorganic glass powder, S2, and the order preparing organic binder bond does not have strict restriction, as long as at S3, completing above-mentioned two steps before preparation silver slurry.
Embodiment 1
Prepare organic binder bond: according to composition proportion: ethyl cellulose 8wt%, nitrocellulose 1.2wt%, the saturating alcohol 58.8wt% of turps, ethylene glycol monobutyl ether 5wt%, diethylene glycol monobutyl ether acetic ester 10wt%, propyl carbinol 4wt%, ethylene glycol phenyl ether 11wt%, department class 2wt%; By saturating for turps alcohol, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetic ester, propyl carbinol, ethylene glycol phenyl ether adds in container, under agitation add ethyl cellulose again, nitrocellulose, it is warming up to 85 �� 2 DEG C, insulation 1h, is cooled to 45 DEG C and adds class of department, filter and obtain organic binder bond.
Prepare unorganic glass powder: according to composition proportion: SiO29wt%, Bi2O345wt%, ZnO7wt%, B2O312wt%, Li2O5wt%, Al2O317wt%, TeO25wt%; All raw materials are mixed, is placed in high temperature resistance furnace and carries out melting, in the molten 0.5h of 900 DEG C of heat, take out rear shrend, pulverizing, ball milling, sieve, after 70 �� 5 DEG C of dryings, sieve and obtain the unorganic glass powder that median size is 0.1-2 ��m.
Prepare slurry: according to composition proportion, silver powder 53wt%, organic binder bond 43.4wt%, unorganic glass powder 3.6wt%. By silver powder, unorganic glass powder, organic binder bond mixing, adjusting into pasty state, be ground to slurry fineness with three-roller rolling and be less than 12 ��m, viscosity is 45Pa S, namely obtains high heat storage crystal silicon solar batteries back electrode silver slurry.
By slurry with 280 order silk screen printings on 156*156mm polysilicon chip (thickness 180 �� 20 ��m), the data testing its photoelectric transformation efficiency after making cell piece by the technological process of production of crystal silicon solar energy battery are: average light photoelectric transformation efficiency >=18.07%.
The polycrystalline silicon battery plate that above-mentioned print has been burnt back electrode silver slurry carries out solder attachment power and storage heat experiment by the following method: being lain in by the silicon chip after sintering on weldering platform, back of the body silver electrode is upward. Welding through soldering flux process is laid in above back electrode, parallel is close to back electrode central authorities, and wherein one end exceeds silicon chip edge.
Press with the weldering nozzle being preheated to 350 DEG C and slowly slided welding, welding is welded in back of the body silver electrode. The silicon chip welded is put into the baking oven being heated to 150 DEG C, places 2h. After taking-up, the reverse 180 �� of bendings of welding that will exceed silicon chip edge end, are fixed in fixture by silicon chip, are fixed on the measuring head of tension tester by folding origin or beginning welding, with 100mm/min constant speed, 180 �� of tearings. Through measuring, its average tension > 2N.
Embodiment 2
Prepare organic binder bond: according to composition proportion: ethyl cellulose 6wt%, nitrocellulose 3.5wt%, the saturating alcohol 72wt% of turps, ethylene glycol monobutyl ether 4wt%, diethylene glycol monobutyl ether acetic ester 10wt%, propyl carbinol 2wt%, ethylene glycol phenyl ether 10wt%, department class 2wt%; By saturating for turps alcohol, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetic ester, propyl carbinol, ethylene glycol phenyl ether adds in container, under agitation add ethyl cellulose again, nitrocellulose, it is warming up to 95 �� 2 DEG C, insulation 1h, is cooled to 50 DEG C and adds class of department, filter and obtain organic binder bond.
Prepare unorganic glass powder: according to composition proportion: SiO29wt%, Bi2O360wt%, BaO2wt%, ZnO3wt%, B2O38wt%, Li2O5wt%, Al2O33wt%, TeO210wt%; All raw materials are mixed, is placed in high temperature resistance furnace and carries out melting, in the molten 1h of 1200 DEG C of heat, take out rear shrend, pulverizing, ball milling, sieve, after 70 �� 5 DEG C of dryings, sieve and obtain the unorganic glass powder that median size is 0.1-2 ��m.
Prepare slurry: according to composition proportion, silver powder 50wt%, organic binder bond 45.8wt%, unorganic glass powder 4.2wt%. By silver powder, unorganic glass powder, organic binder bond mixing, adjusting into pasty state, be ground to slurry fineness with three-roller rolling and be less than 12 ��m, viscosity is 51Pa �� S, namely obtains high heat storage crystal silicon solar batteries back electrode silver slurry.
The producer of the composition of the present embodiment is identical with embodiment 1, and the storage heat testing method according to embodiment 1, after 150 DEG C of baking oven baking 2h, pulling force > 2N.
Embodiment 3
Prepare organic binder bond: according to composition proportion: ethyl cellulose 9.8wt%, the saturating alcohol 63wt% of turps, ethylene glycol monobutyl ether 8.2wt%, diethylene glycol monobutyl ether acetic ester 17wt%, department class 2wt%; By saturating for turps alcohol, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetic ester adds in container, more under agitation adds ethyl cellulose, is warming up to 95 �� 2 DEG C, insulation 1h, is cooled to 50 DEG C and adds class of department, filters and obtain organic binder bond.
Prepare unorganic glass powder: according to composition proportion: SiO24wt%, Bi2O352wt%, BaO3wt%, ZnO5wt%, B2O315wt%, Li2O6wt%, Al2O32wt%, TeO213wt%; All raw materials are mixed, is placed in high temperature resistance furnace and carries out melting, in the molten 0.5h of 1300 DEG C of heat, take out rear shrend, pulverizing, ball milling, sieve, after 80 �� 5 DEG C of dryings, sieve and obtain the unorganic glass powder that median size is 0.1-2 ��m.
Prepare slurry: according to composition proportion, silver powder 48wt%, organic binder bond 47.5wt%, unorganic glass powder 4.5wt%. By silver powder, unorganic glass powder, organic binder bond mixing, adjusting into pasty state, be ground to slurry fineness with three-roller rolling and be less than 12 ��m, viscosity is 56Pa �� S, namely obtains high heat storage crystal silicon solar batteries back electrode silver slurry.
The producer of the composition of the present embodiment is identical with embodiment 1, and the storage heat testing method according to embodiment 1, after 150 DEG C of baking oven baking 2h, pulling force > 2N.
The high heat storage crystal silicon solar back electrode silver that above-described embodiment 1-3 prepares gained is starched with commercially available back electrode silver slurry by, after printing, contrasting electrical property and baking pulling force, and result is as shown in the table:
Electrical performance data:
Baking pulling force data:
| Sheet number | Comparative example | Embodiment 1 | Embodiment 2 | Embodiment 3 |
| Sheet 1 | 1.1 | 2.5 | 3.2 | 3.6 |
| Sheet 2 | 1.3 | 2.5 | 3.0 | 3.5 |
| Sheet 3 | 1.1 | 2.7 | 3.1 | 3.9 |
From above-mentioned data it may be seen that adopt the present invention formula after, it is possible to ensure silver slurry fundamental property prerequisite under, greatly improve baking pulling force; And from experimental data it may be seen that along with the increase of the weight percent of tellurium oxide unorganic glass powder, baking pulling force also progressively increases.
Below it is only the better embodiment of the present invention, not the present invention is done any restriction in form, every any simple modification, equivalent variations and modification above embodiment done according to the technical spirit of the present invention, all still belongs in the scope of technical solution of the present invention.
Claims (10)
1. a high heat storage crystal silicon solar back electrode silver slurry, it is characterized in that: comprise the unorganic glass powder of specified wt per-cent, silver powder and organic binder bond, wherein, the weight percent of unorganic glass powder is 2-6wt%, the weight percent of silver powder is 48-53wt%, and the weight percent of organic binder bond is 41-51wt%.
2. a kind of high heat storage crystal silicon solar back electrode silver slurry according to claim 1, it is characterised in that: described unorganic glass powder comprises following weight percent composition: SiO2: 4-20wt%, Bi2O3: 40-60wt%, BaO:0-20wt%, ZnO:2-12wt%, B2O3: 6-15wt%, Li2O:1-8wt%, Al2O3: 2-35wt%, TeO2: 1-20wt%.
3. a kind of high heat storage crystal silicon solar back electrode silver slurry according to claim 1, it is characterised in that: the median size of described unorganic glass powder is 0.1-2 ��m.
4. a kind of high heat storage crystal silicon solar back electrode silver slurry according to claim 1, it is characterised in that: described silver powder is the mixture of spherical silver powder and flake silver powder, and wherein the purity > 99.90%, D50 of spherical silver powder is 0.2-4 ��m; The purity > 99.90%, D50 of flake silver powder is 2.0-20 ��m.
5. a kind of high heat storage crystal silicon solar back electrode silver slurry according to claim 1, it is characterized in that: described organic binder bond comprises following weight percent composition: organic resin: 2-15wt%, organic solvent: 80-95wt%, tensio-active agent: 0.5-5wt%.
6. a kind of high heat storage crystal silicon solar back electrode silver slurry according to claim 5, it is characterised in that: described organic resin is the combination of one or more in ethyl cellulose, Nitrocellulose, Synolac; Described organic solvent is the combination of one or more in the saturating alcohol of turps, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetic ester, propyl carbinol, ethylene glycol monobutyl ether, ethylene glycol phenyl ether; Described tensio-active agent is the combination of one or more in Yelkin TTS, department class, lanolin.
7. a kind of high heat storage crystal silicon solar back electrode silver slurry according to claim 5, it is characterised in that: described organic resin is the mixture that ethyl cellulose, Nitrocellulose are formed according to specified wt per-cent; Described tensio-active agent is class of department.
8. the preparation method of a high heat storage crystal silicon solar back electrode silver slurry, it is characterised in that: comprise the steps:
S1, prepare unorganic glass powder: mixed by the raw material of specified wt per-cent and be placed in high temperature resistance furnace, in the molten 0.5-1.5h of 900-1400 DEG C of heat, take out rear shrend, pulverizing, ball milling, sieve, after the first temperature a drying, sieve and obtain specifying the unorganic glass powder of median size;
S2, prepare organic binder bond: add in container by the organic solvent of specified wt per-cent, the organic resin of specified wt per-cent is added under whipped state, it is warming up to the 2nd temperature b, cool to the 3rd temperature c after the insulation T1 time, and filter after adding the tensio-active agent of specified wt per-cent and obtain organic binder bond;
S3, preparation silver slurry: according to composition proportion, by silver powder, unorganic glass powder, organic binder bond mixing, adjusts into pasty state, is ground to slurry fineness with three-roller rolling and is less than 12 ��m, and viscosity is the high heat storage crystal silicon solar batteries back electrode silver slurry of 35-70Pa S.
9. the preparation method of a kind of high heat storage crystal silicon solar back electrode according to claim 8 silver slurry, it is characterised in that: described first temperature a is 60-90 DEG C, and the 2nd temperature is 80-100 DEG C, and the 3rd temperature is 40-50 DEG C.
10. the preparation method of a kind of high heat storage crystal silicon solar back electrode according to claim 8 silver slurry, it is characterised in that: the described T1 time is 0.5-1.5h.
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