CN105628746A - Method for manufacturing 7-electrode conductivity sensor based on MEMS (micro-electromechanical systems) silicon technology - Google Patents
Method for manufacturing 7-electrode conductivity sensor based on MEMS (micro-electromechanical systems) silicon technology Download PDFInfo
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Abstract
The invention discloses a method for manufacturing a 7-electrode conductivity sensor based on an MEMS (micro-electromechanical systems) silicon technology. The method comprises the steps that seven semicircular metal electrodes and a semi-cylindrical conductance cell are manufactured through N-shaped silicon slices a, and seven semicircular metal electrodes and a semi-cylindrical conductance cell are manufactured through N-shaped silicon slices b, wherein semi-cylindrical cavities and the semicircular metal electrodes of the N-shaped silicon slices b and semi-cylindrical cavities and the semicircular metal electrodes of the N-shaped silicon slices a are identical in size and position; a complete cylindrical conductance cell and seven circular metal electrodes are assembled through the two parts. The method for manufacturing the 7-electrode conductivity sensor is simple, and size is small; based on the MEMS process technology, mass production can be achieved, and the production cost can be reduced; the machining precision is high, reliability is high, and universality is high.
Description
Technical field
The present invention relates to the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology, relate to microelectromechanical systems manufacture, Ocean Surveying application scenario, be particularly well-suited to high accuracy, in high volume, the manufacture of the conductivity sensor of low cost, small size.
Background technology
At present, oceanographic observation is constantly subjected to pay close attention to widely, sea water conductivity is the physical element that ocean water body is most basic, various phenomenons in ocean, process, halobiontic existence and breeding, and the offshore activities of the mankind, including marine military activity, nearly all directly or indirectly relevant to the spatial and temporal distributions of sea water conductivity.
The sensor of in-site measurement sea water conductivity is broadly divided into electric pole type and vicarious, and wherein electric pole type conductivity sensor subsequent process circuit is simple, certainty of measurement is high, easy to use, is widely used in the conductivity measurement of sea water. Electric pole type conductivity sensor is generally adopted multiple electrode structure, and wherein, seven-electrode conductivity sensor is compared with two conventional electrodes, three electrodes, four electrode conductivity sensors, and precision is higher, and performance is better. In prior art, manufacturing of seven-electrode conductivity sensor being adopted traditional machining, machining accuracy is low, difficulty of processing is big, processing cost is high, be not suitable for high-volume manufactures. And adopt MEMS technology to manufacture conductivity sensor, it is capable of processing in high precision, low-costly and in high volume, the sensor that MEMS produces also has that volume is little, low in energy consumption, is prone to realize mutual feature with electronic circuit, is suitably applied oceanographic observation automatic, online, long-term, continuous, multi-platform, networking.
Summary of the invention
Goal of the invention:Present invention is primarily targeted at, overcome the deficiency of traditional mechanical process technology, it is provided that the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology, this manufacture method is simple to operate, can be mass-produced, and reduces production cost, machining accuracy is high, and reliability is high, highly versatile. The conductivity sensor compact manufactured, certainty of measurement is high, and measuring speed is fast, easy to use.
Technical scheme:In order to achieve the above object, the technical solution adopted in the present invention is:
The manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology, comprises the following steps:
(1) on N-type silicon chip a, deposit photoresist and carry out photoetching, making the centre of N-type silicon chip a expose a rectangular area as diffusion window;
(2) using the photoresist in step (1) as mask, the diffusion window formed from step (1) adulterates to N-type silicon chip a, is internally formed semi-cylindrical p type diffused layer at N-type silicon chip a;
(3) adopt PN junction etch stop technology, semi-cylindrical p type diffused layer is corroded, form semi-cylindrical cavity;
(4) N-type silicon chip a upper surface is aoxidized, form dielectric substrate;
(5) at semi-cylindrical cavity upper surface seven semi-circular shape metal electrodes of parallel deposition, one end of each semi-circular shape metal electrode is each with a metal anchors district;
(6) repeat step (1) ~ step (5), another sheet N-type silicon chip b manufacture and obtains semi-cylindrical cavity and seven semi-circular shape metal electrodes without metal anchors district, and by N-type silicon chip b corresponding to the Partial Resection in metal anchors district on N-type silicon chip a; The semi-cylindrical cavity of N-type silicon chip b, semi-circular shape metal electrode and the semi-cylindrical cavity of N-type silicon chip a, the size of semi-circular shape metal electrode and position are all identical;
(7) seven semi-circular shape metal electrodes of N-type silicon chip a and N-type silicon chip b and semi-cylindrical cavity are alignd respectively, the upper surface of N-type silicon chip a and the upper surface of N-type silicon chip b are carried out gold-gold bonding, forms complete cylindrical cavity and seven annulus metal electrodes;
(8) fill packaging plastic from the side, and unwanted structure is excised, make the conductance cell that cylindrical cavity forms both ends open, sidewall is closed.
In described step (1), the width range of diffusion window is between 5 ~ 10 microns.
In described step (2), adopting diffusion technique, diffusion window place is carried out boron doping, owing to diffusion has isotropic, simultaneously again because the narrower in width of diffusion window, the p type diffused layer of generation is approximately a semi-cylindrical.
In described step (3), first photoresist is removed, make a corrosion electrode for corroding in p type diffused layer upper surface and N-type silicon substrate lower surface respectively; Then N-type silicon chip a is immersed in TMAH solution, adopt PN junction etch stop technology, reverse biased is applied between PN junction, make the positive voltage applied in N-type silicon substrate higher than passivation potential, p type diffused layer is in open circuit potential place, thus N-type silicon substrate is passivated and is not corroded, p type diffused layer is corroded until eroding to N-type silicon substrate place, and corrosion terminates.
The corrosion electrode of described p type diffused layer, is positioned at one end of semi-cylindrical p type diffused layer length direction, and is connected with p type diffused layer upper surface; The corrosion electrode of described N-type silicon substrate is positioned at N-type silicon substrate lower surface and aligns in vertical direction with the corrosion electrode of P type substrate.
In described step (4), adopt oxidation technology that N-type silicon chip a upper surface is aoxidized, generating the silicon dioxide layer of thin layer as insulating barrier, described silicon dioxide layer is connected with the upper surface of described N-type silicon substrate, and silicon dioxide layer forms dielectric substrate with N-type silicon substrate.
In described step (5), adopting metal miromaching to make semi-circular shape metal electrode, metal material adopts gold.
Described seven semi-circular shape metal electrodes are connected with the upper surface of the dielectric substrate in described step (4); Each semi-circular shape metal electrode deposits all along the semi-circular cross-sections direction of semi-cylindrical cavity, the two ends of each semi-circular shape metal electrode outwardly directed extend a distance into from the edge of semi-cylindrical cavity along parallel with cavity diameter, wherein the end of one end is also each with a square-shaped metal anchor district, is connected with the lead-in wire of outer treatment circuit for semi-circular shape metal electrode; Seven semi-circular shape metal electrodes are arranged along semi-cylindrical cavity length direction, it is parallel to each other between electrode and electrode, it is divided into galvanic electrode, voltage electrode and ground electrode, centered by a middle galvanic electrode, symmetrical above and below is provided with two pairs of voltage electrodes and a pair ground electrode; The pair of ground electrode is positioned at the equivalently-sized of outermost, ground electrode and galvanic electrode, two pairs of voltage electrodes equivalently-sized, and wherein, the length of all electrodes is equal, and the width of voltage electrode is narrower than the width of described galvanic electrode and the width of ground electrode.
In described step (6), seven semi-circular shape metal electrodes on N-type silicon chip b adopt the technique identical with N-type silicon chip a, material and step manufacture.
In described step (8), overall structure is excised by the direction that described excision is the cross section along cylindrical cavity, retain cylindrical cavity and seven circular ring metal electrodes, the four of N-type silicon chip a and N-type silicon chip b corrosion electrodes are excised, make cylindrical cavity two ends along its length expose simultaneously, during measurement, described conductivity sensor is immersed in sea water, sea water can flow in cavity from the two ends of cylindrical cavity, and this cylindrical cavity is the conductance cell of conductivity sensor.
Beneficial effect:Compared with prior art, the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology provided by the invention, there is the plurality of advantages such as manufacture method is simple, easy to operate, machining accuracy is high, processing cost is low, can be mass-produced, adopt the conductivity sensor that MEMS process technology manufactures simultaneously, also have that volume is little, low in energy consumption, be prone to realize mutual feature with electronic circuit, be suitably applied oceanographic observation automatic, online, long-term, continuous, multi-platform, networking.
Accompanying drawing explanation
Fig. 1 is the profile of the N-type silicon substrate of N-type silicon chip a;
Wherein, 101a is N-type silicon substrate;
Fig. 2 is the N-type silicon chip a profile covering photoresist as mask;
Wherein, 2a is photoresist; 3a is diffusion window;
Fig. 3 is the N-type silicon chip a top view covering photoresist as mask;
Fig. 4 is the N-type silicon chip a profile forming p type diffused layer after carrying out P doping;
Wherein, 4a is semi-cylindrical p type diffused layer;
Fig. 5 is the N-type silicon chip a profile after deposit corrosion electrode;
Wherein, 1a is dielectric substrate; (5a, 6a) is corrosion electrode; 501a is oxide layer;
Fig. 6 is the N-type silicon chip a top view after deposit corrosion electrode;
Fig. 7 is the N-type silicon chip a bottom view after deposit corrosion electrode;
Fig. 8 is the N-type silicon chip a profile after corrosion p type diffused layer;
Wherein, 7a is semi-cylindrical cavity;
Fig. 9 is the N-type silicon chip a profile after oxidation;
Wherein, 102a is silicon dioxide layer;
Figure 10 is the N-type silicon chip a profile after deposit 7 test electrode;
Wherein, 8a is seven semi-circular shape metal electrodes;
Figure 11 is the N-type silicon chip a top view after deposit 7 test electrode;
Wherein, (801a, 807a) is ground electrode; 804a is galvanic electrode; (802a, 803a, 805a, 806a) is voltage electrode; (901,907) are ground electrode metal anchors district; 904 is galvanic electrode metal anchors district; (902,903,905,906) are voltage electrode metal anchors district;
Figure 12 is the N-type silicon chip b profile completed;
Wherein, 1b is N-type silicon chip b dielectric substrate; 7b is the semi-cylindrical cavity on N-type silicon chip b; 8b is seven semi-circular shape metal electrodes of N-type silicon chip b;
Figure 13 is the N-type silicon chip b top view completed;
Wherein, (801b, 807b) is ground electrode; 804b is galvanic electrode; (802b, 803b, 805b, 806b) is voltage electrode; 11 is the part of excision on N-type silicon chip b;
Figure 14 is the seven-electrode conductivity sensor profile after gold-gold bonding;
7 is cylindrical cavity; 8 is circular ring metal electrode; 9 is metal anchors district.
Detailed description of the invention
In order to be better understood upon the technological means of the present invention, below in conjunction with accompanying drawing, the invention will be further described.
As Fig. 1 ~ 14 show the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology, comprise the following steps:
(1) as shown in Fig. 1 ~ 3, the N-type silicon substrate 101a of N-type silicon chip a deposit photoresist 2a and carries out photoetching, making the centre of N-type silicon substrate 101a expose a rectangular area as diffusion window 3a, the narrower in width of diffusion window 3a, be approximately in 5 microns;
(2) as shown in Figure 4, using the photoresist 2a in step (1) as mask, adopt diffusion technique, the diffusion window 3a formed from step (1) carries out boron doping to N-type silicon chip a, owing to diffusion has the feature of isotropic, simultaneously again because the narrower in width of diffusion window 3a, it is approximately a semi-cylindrical at the N-type silicon substrate 101a p type diffused layer 4a being internally formed;
(3) as shown in Fig. 5 ~ 8, first photoresist 2a is removed, make a lower surface for the corrosion electrode 5a corroded and N-type silicon substrate 101a respectively in p type diffused layer 4a upper surface and make a corrosion electrode 6a for corroding; The corrosion electrode 5a of described p type diffused layer 4a, it is positioned at one end of semi-cylindrical p type diffused layer 4a length direction, and be connected with the upper surface of p type diffused layer 4a, the surrounding of corrosion electrode 5a, semi-cylindrical p type diffused layer 4a upper surface cover layer of oxide layer 501a as protective layer, protection corrosion electrode 5a in corrosion process without departing from p type diffused layer 4a;
The corrosion electrode 6a of described N-type silicon substrate 101a is positioned at N-type silicon substrate 101a lower surface and aligns in vertical direction with the corrosion electrode 5a of p type diffused layer 4a; Then N-type silicon chip a is immersed in TMAH solution, adopt PN junction etch stop technology, reverse biased is applied between PN junction, make the positive voltage applied on N-type silicon substrate 101a higher than passivation potential, p type diffused layer 4a is in open circuit potential place, thus N-type silicon substrate 101a is passivated and is not corroded, p type diffused layer 4a is corroded until eroding to N-type silicon substrate 101a place, and corrosion terminates; It is semi-cylindrical owing to corroding front p type diffused layer 4a, semi-cylindrical cavity 7a after corrosion, will be formed;
(4) as shown in Figure 9, adopt oxidation technology that N-type silicon chip a upper surface is aoxidized, generate the silicon dioxide layer 102a of thin layer as insulating barrier, the upper surface of described silicon dioxide layer 102a and described N-type silicon substrate 101a is connected, and silicon dioxide layer 102a and N-type silicon substrate 101a forms dielectric substrate 1a;
(5) as shown in Figure 10 ~ 11, adopt metal miromaching to make seven semi-circular shape metal electrode 8a(and include 801a ~ 807a), metal material adopts gold;
Described seven semi-circular shape metal electrode 8a(include 801a ~ 807a) it is connected with the upper surface of the dielectric substrate 1a in described step (4); Each semi-circular shape metal electrode deposits all along the semi-circular cross-sections direction of semi-cylindrical cavity 7a, semi-circular shape metal electrode 801a ~ 807a is semicircular ring shape inside cavity 7a, the two ends of each semi-circular shape metal electrode outwardly directed extend a distance into from the edge of semi-cylindrical cavity 7a along parallel with cavity diameter, wherein the end of one end is also each with a square-shaped metal anchor district 901 ~ 907, is connected with the lead-in wire of outer treatment circuit for semi-circular shape metal electrode 801a ~ 807a;
Seven semi-circular shape metal electrode 801a ~ 807a arrange along semi-cylindrical cavity 7a length direction, it is parallel to each other between electrode and electrode, it is ground electrode that position is positioned at outermost two electrode 801a and 807a, being positioned at a middle electrode 804a is galvanic electrode, all the other four electrode 802a, 803a, 805a and 806a are voltage electrode, the voltage electrode (802a and 803a, 805a and 806a) that each two is adjacent is a pair, point centered by middle galvanic electrode 804a; A pair ground electrode 801a, 807a and two couples of voltage electrodes 802a, 803a, 805a, 806a are symmetrical arranged along cavity 7a length direction; Said two ground electrode 801a, 807a and one galvanic electrode 804a are equivalently-sized, four voltage electrodes 802a, 803a, 805a, 806a are equivalently-sized, wherein, the length of all electrode 801a ~ 807a is equal, the width of four voltage electrodes 802a, 803a, 805a, 806a is relatively thin, the wider width of galvanic electrode 804a and two ground electrodes 801a, 807a.
(6) as shown in Figure 12 ~ 13, repeat step (1) ~ step (5), another sheet N-type silicon chip b manufactures semi-cylindrical cavity 7b and seven semi-circular shape metal electrode 8b(and includes 801b ~ 807b), the semi-cylindrical cavity 7b of N-type silicon chip b, semi-circular shape metal electrode 8b(includes 801b ~ 807b) with the semi-cylindrical cavity 7a of N-type silicon chip a, semi-circular shape metal electrode 8a(includes 801a ~ 807a) size all identical with position, unique the difference is that, the semi-circular shape metal electrode 8b(of N-type silicon chip b includes 801b ~ 807b) without metal anchors district 9, and the semi-circular shape metal electrode 8a(of N-type silicon chip a includes 801a ~ 807a) one end include 901 ~ 907 with metal anchors district 9(), N-type silicon chip b will include 901 ~ 907 corresponding to metal anchors district 9(on N-type silicon chip a) part 11 excise.
(7) as shown in Figure 10 ~ 14, the seven of N-type silicon chip a semi-circular shape metal electrode 8a(are included 801a ~ 807a) and seven semi-circular shape metal electrode 8b(of N-type silicon chip b include 801b ~ 807b) one by one alignment, the semi-cylindrical cavity 7b on the semi-cylindrical cavity 7a and N-type silicon chip b on N-type silicon chip a is alignd respectively, the upper surface of two N-type silicon chip a is carried out gold-gold bonding, forms complete cylindrical cavity 7 and seven circular ring metal electrodes 8.
Due in described step (6), 901 ~ 907 are included corresponding to N-type silicon chip a metal anchors district 9(on N-type silicon chip b) part 11 of position excised, the metal anchors district 9(of N-type silicon chip a includes 901 ~ 907) after described step (7) completes, it is exposed to outside, is conveniently connected with the lead-in wire of external circuit.
(8) along the direction of the cross section of cylindrical cavity 7, N-type silicon chip a is excised, retain cylindrical cavity 7 and seven circular ring metal electrodes 8, by not shown in FIG. to the four of N-type silicon chip a and N-type silicon chip b corrosion electrodes 5a, 6a, 5b(, it is positioned on N-type silicon chip b, position is identical with 5a) and 6b(not shown in FIG., it is positioned on N-type silicon chip b, position is identical with 6a) excision, make cylindrical cavity 7 two ends along its length expose simultaneously, and fill packaging plastic from the side, make cylindrical cavity 7 form the conductance cell closed.
During measurement, being immersed by a kind of for present invention seven-electrode conductivity sensor based on MEMS silicon technology in sea water, sea water can flow in cylindrical cavity 7 from the two ends of cylindrical cavity 7, this cylindrical cavity 7 i.e. conductance cell of conductivity sensor.
Manufacture method by a kind of seven-electrode conductivity sensor based on MEMS silicon technology provided by the invention, simple, easy to operate, machining accuracy is high, processing cost is low, can be mass-produced, when overcoming traditional mechanical process technology manufacture seven-electrode conductivity sensor, machining accuracy is low, difficulty of processing is big, processing cost is high, be difficult to the shortcoming that high-volume manufactures. Sensor is based on MEMS process technology, and volume is little, low in energy consumption, it is mutual with electronic circuit realization to be prone to, practical.
The ultimate principle of the present invention, principal character and advantage have more than been shown and described. Skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; described in above-described embodiment and description is that principles of the invention is described; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within the claimed scope of the invention. Claimed scope is defined by appending claims and equivalent thereof.
Claims (10)
1. the manufacture method based on the seven-electrode conductivity sensor of MEMS silicon technology, it is characterised in that comprise the following steps:
(1) on N-type silicon chip a, deposit photoresist and carry out photoetching, making the centre of N-type silicon chip a expose a rectangular area as diffusion window;
(2) using the photoresist in step (1) as mask, the diffusion window formed from step (1) adulterates to N-type silicon chip a, is internally formed semi-cylindrical p type diffused layer at N-type silicon chip a;
(3) adopt PN junction etch stop technology, semi-cylindrical p type diffused layer is corroded, form semi-cylindrical cavity;
(4) N-type silicon chip a upper surface is aoxidized, form dielectric substrate;
(5) at semi-cylindrical cavity upper surface seven semi-circular shape metal electrodes of parallel deposition, one end of each semi-circular shape metal electrode is each with a metal anchors district;
(6) repeat step (1) ~ step (5), another sheet N-type silicon chip b manufacture and obtains semi-cylindrical cavity and seven semi-circular shape metal electrodes without metal anchors district, and by N-type silicon chip b corresponding to the Partial Resection in metal anchors district on N-type silicon chip a; The semi-cylindrical cavity of N-type silicon chip b, semi-circular shape metal electrode and the semi-cylindrical cavity of N-type silicon chip a, the size of semi-circular shape metal electrode and position are all identical;
(7) seven semi-circular shape metal electrodes of N-type silicon chip a and N-type silicon chip b and semi-cylindrical cavity are alignd respectively, the upper surface of N-type silicon chip a and the upper surface of N-type silicon chip b are carried out gold-gold bonding, forms complete cylindrical cavity and seven annulus metal electrodes;
(8) fill packaging plastic from the side, and unwanted structure is excised, make the conductance cell that cylindrical cavity forms both ends open, sidewall is closed.
2. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterised in that: in described step (1), the width range of diffusion window is between 5 ~ 10 microns.
3. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterized in that: in described step (2), adopt diffusion technique, diffusion window place is carried out boron doping, owing to diffusion has the feature of isotropic, simultaneously again because the narrower in width of diffusion window, the p type diffused layer of generation is approximately a semi-cylindrical.
4. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterized in that: in described step (3), first photoresist is removed, make a corrosion electrode for corroding in p type diffused layer upper surface and N-type silicon substrate lower surface respectively; Then N-type silicon chip a is immersed in TMAH solution, adopt PN junction etch stop technology, reverse biased is applied between PN junction, make the positive voltage applied in N-type silicon substrate higher than passivation potential, p type diffused layer is in open circuit potential place, thus N-type silicon substrate is passivated and is not corroded, p type diffused layer is corroded until eroding to N-type silicon substrate place, and corrosion terminates.
5. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 4, it is characterized in that: the corrosion electrode of described p type diffused layer, be positioned at p type diffused layer upper surface, one end along semi-cylindrical p type diffused layer length direction; The corrosion electrode of described N-type silicon substrate is positioned at N-type silicon substrate lower surface and aligns in vertical direction with the corrosion electrode of P type substrate.
6. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterized in that: in described step (4), adopt oxidation technology that N-type silicon chip a upper surface is aoxidized, generate the silicon dioxide layer of thin layer as insulating barrier, described silicon dioxide layer is connected with the upper surface of described N-type silicon substrate, and silicon dioxide layer forms dielectric substrate with N-type silicon substrate.
7. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterised in that: in described step (5), adopting metal miromaching to make semi-circular shape metal electrode, metal material adopts gold.
8. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 7, it is characterised in that: described seven semi-circular shape metal electrodes are connected with the upper surface of the dielectric substrate in described step (4); Each semi-circular shape metal electrode deposits all along the semi-circular cross-sections direction of semi-cylindrical cavity, the two ends of each semi-circular shape metal electrode outwardly directed extend a distance into from the edge of semi-cylindrical cavity along parallel with cavity diameter, wherein the end of one end is also each with a square-shaped metal anchor district, is connected with the lead-in wire of outer treatment circuit for semi-circular shape metal electrode; Seven semi-circular shape metal electrodes are arranged along semi-cylindrical cavity length direction, it is parallel to each other between electrode and electrode, it is divided into galvanic electrode, voltage electrode and ground electrode, centered by a middle galvanic electrode, symmetrical above and below is provided with two pairs of voltage electrodes and a pair ground electrode; The pair of ground electrode is positioned at the equivalently-sized of outermost, ground electrode and galvanic electrode, two pairs of voltage electrodes equivalently-sized, and wherein, the length of all electrodes is equal, and the width of voltage electrode is narrower than the width of described galvanic electrode and the width of ground electrode.
9. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterized in that: in described step (6), seven semi-circular shape metal electrodes on N-type silicon chip b adopt the technique identical with N-type silicon chip a, material and step manufacture.
10. the manufacture method of a kind of seven-electrode conductivity sensor based on MEMS silicon technology according to claim 1, it is characterized in that: in described step (8), overall structure is excised by the direction that described excision is the cross section along cylindrical cavity, retain cylindrical cavity and seven circular ring metal electrodes, the four of N-type silicon chip a and N-type silicon chip b corrosion electrodes are excised, make cylindrical cavity two ends along its length expose simultaneously, during measurement, described conductivity sensor is immersed in sea water, sea water can flow in cavity from the two ends of cylindrical cavity, this cylindrical cavity is the conductance cell of conductivity sensor.
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| CN106569037A (en) * | 2016-11-16 | 2017-04-19 | 河海大学 | Micro-electro mechanical system (MEMS) technology-based induction type conductivity sensor and manufacturing method thereof |
| CN107576855A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of low conductivity microsensor and application method |
| CN107576854A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of interdigital concentric circles MEMS low conductivities sensor of band and application method |
| CN113495191A (en) * | 2020-04-01 | 2021-10-12 | 中国科学院上海硅酸盐研究所 | Preparation method of seven-electrode conductivity sensor |
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| CN107576855A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of low conductivity microsensor and application method |
| CN107576854A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of interdigital concentric circles MEMS low conductivities sensor of band and application method |
| CN107576855B (en) * | 2017-10-12 | 2020-04-03 | 河海大学 | Low-conductivity microsensor and use method thereof |
| CN107576854B (en) * | 2017-10-12 | 2020-04-03 | 河海大学 | Concentric circle-shaped MEMS low-conductivity sensor with interdigital and application method |
| CN113495191A (en) * | 2020-04-01 | 2021-10-12 | 中国科学院上海硅酸盐研究所 | Preparation method of seven-electrode conductivity sensor |
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