CN105624648B - Film growth chamber and film grower - Google Patents
Film growth chamber and film grower Download PDFInfo
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- CN105624648B CN105624648B CN201610179954.2A CN201610179954A CN105624648B CN 105624648 B CN105624648 B CN 105624648B CN 201610179954 A CN201610179954 A CN 201610179954A CN 105624648 B CN105624648 B CN 105624648B
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- square
- air
- pallet
- film
- puff prot
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
Abstract
The present invention provides a kind of film growth chamber and film grower, film growth chamber is square chamber；There is at least one pallet rest area, pallet rest area is used for the square pallet for placing the substrate for carrying film to be grown in rectangular cavity room；The top surface of square chamber has at least one air intake structure, air intake structure includes air admission hole and the square even device of air being connected with air admission hole, each even device of air is located at the top of at least one pallet rest area, the gas that even device of air is used to air admission hole being passed through uniformly spurts the pallet rest area to lower section, so that the substrate surface for the square pallet carrying that pallet rest area is placed generates uniform film.Square chamber in the present invention can unrestrictedly expand, as long as being provided with air intake structure on widened top surface, the uniform gas for meeting film homoepitaxial demand just can be provided for the substrate in the square pallet of lower section, so as to improve the production capacity of film grower.
Description
Technical field
The present invention relates to technical field of semiconductor, is given birth to more specifically to a kind of film growth chamber and film
Growth device.
Background technology
MOCVD (Metal Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase
Settling apparatus), it is the key equipment for preparing light emitting diode (LED), semiconductor laser (LD) and high-power electronic device, especially
It is with a wide range of applications in terms of GaN base LED is prepared and the market demand.
In the prior art, the film growth of most of GaN base LED is given birth on a sapphire substrate using MOCVD device
Long one layer of gallium nitride or aluminum nitride buffer layer, then grow the InGaN/ of doping (element such as Mg, Al, In) on the buffer layer again
AIGaN hetero-junctions, to form P-N junction luminescent layer.Taken using during MOCVD device growing film, it is necessary to be passed through into reaction chamber
Band gas and each source material.Wherein, source material includes metallorganic (MO) and gas source, both is to participate in chemistry instead
Should and the material containing the source material component in product；Carrying gas includes nitrogen, hydrogen and inert gas etc., these are taken
Band gas simply carries source material and enters in reative cell, itself does not participate in chemical reaction.
But since the circular chamber of existing MOCVD device is at best able to load 2 inch substrates of 70 to 80,
Therefore, it can cause that the production capacity of MOCVD device is relatively low.Although the volume of increase circular chamber can improve to a certain extent
The production capacity of MOCVD device, still, under the limitation of gas border condition, the volume of circular chamber cannot unrestrictedly expand, no
Can then cause to be passed through the indoor gas of circular cavity cannot be uniformly distributed in chamber, and then can not meet the need of film homoepitaxial
Ask.
The content of the invention
In view of this, the present invention provides a kind of film growth chamber and film grower, to solve in the prior art
The film growth apparatus of circular chamber the problem of for example MOCVD device production capacity is relatively low.
To achieve the above object, the present invention provides following technical solution：
A kind of film growth chamber, the film growth chamber are square chamber；
There is at least one pallet rest area, the pallet rest area carries at least for placement in the rectangular cavity room
The square pallet of the substrate of one film to be grown；
The top surface of the square chamber has at least one air intake structure, the air intake structure include air admission hole and with it is described
The square even device of air of air admission hole connection, each even device of air are located at the top of at least one pallet rest area, institute
State even device of air and be used for the gas that is passed through the air admission hole and uniformly spurt pallet rest area to lower section, so that the pallet is put
The substrate surface for putting the square pallet carrying of area's placement generates uniform film.
Preferably, the even device of air includes multiple circular or square puff prot, and the multiple puff prot is uniformly distributed
In the bottom surface of the even device of air, gas is uniformly spurted to the substrate surface to the square pallet carrying of lower section.
Preferably, the air intake structure includes the first air admission hole and the second air admission hole, the even device of air include with it is described
First even gas region of the first air admission hole connection and the second even gas region being connected with second air admission hole；
The first even gas region includes multiple first puff prots, and the second even gas region includes multiple second jets
Mouthful, first puff prot and second puff prot are spaced, and first puff prot and second puff prot are equal
The even bottom surface for being distributed in the even device of air.
Preferably, first puff prot and the second puff prot are strip structure, spaced first puff prot
Pectinate texture or grating structure are formed with the second puff prot；
Alternatively, first puff prot and the second puff prot are circular configuration.
Preferably, the discharging surface of first puff prot or the second puff prot is inclined plane.
Preferably, the air intake structure includes the first air admission hole and the second air admission hole, the even device of air by pipeline with
First air admission hole and the second air admission hole connect, and have control valve on the pipeline, and the control valve is used for described
After gas mixing that the gas and second air admission hole that first air admission hole is passed through are passed through is uniform, the mixed gas is passed through institute
State in even device of air.
Preferably, the bottom of the square chamber has the row that multiple length directions along the square chamber are arranged in order
Gas port, the exhaust outlet are used to emit the gas after reacting in the rectangular cavity room.
Preferably, the film growth chamber further includes transmitting device, and the transmitting device is used for before film growth
By the square tray transport to the lower section of the even device of air, during film is grown the square pallet is controlled to do past
Multiple movement, so that the gas above the square pallet uniformly mixes.
Preferably, the film growth chamber further includes heating unit, and the heating unit includes multiple heating elements, extremely
A few heating element is correspondingly arranged at the lower section of a square pallet, to control the film of the substrate in the square pallet
Growth temperature.
A kind of film grower, including as above any one of them film growth chamber.
Compared with prior art, technical solution provided by the present invention has the following advantages：
Film growth chamber provided by the present invention and film grower, rectangular cavity ceiling face have at least one air inlet
Structure, the air intake structure include air admission hole and the square even device of air being connected with the air admission hole, and each even device of air is respectively positioned on
The top of at least one pallet rest area, the gas which is used to air admission hole being passed through uniformly spurt the pallet to lower section
Rest area so that the substrate surface for the square pallet carrying that the pallet rest area is placed generates uniform film, based on this, this
Square chamber in invention can unrestrictedly expand, as long as being provided with air intake structure on the top surface of square chamber enlarged area,
Meet the uniform gas of film homoepitaxial demand with regard to that can be provided for the substrate in the square pallet of lower section, it is thin so as to improve
The production capacity of film grower.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of cross-sectional view of film growth chamber provided in an embodiment of the present invention；
Fig. 2 is a kind of structure diagram of the puff prot of strip structure provided in an embodiment of the present invention；
Fig. 3 is the structure diagram of the puff prot of another strip structure provided in an embodiment of the present invention；
Fig. 4 is a kind of structure diagram of the puff prot of circular configuration provided in an embodiment of the present invention；
Fig. 5 is the structure diagram of the puff prot of another circular configuration provided in an embodiment of the present invention；
Fig. 6 is a kind of structure diagram of puff prot discharging surface provided in an embodiment of the present invention；
Fig. 7 is a kind of structure diagram of square pallet provided in an embodiment of the present invention；
Fig. 8 is the structure diagram of the square pallet of another kind provided in an embodiment of the present invention；
Fig. 9 is a kind of structure diagram of heating element provided in an embodiment of the present invention；
Figure 10 is the overlooking the structure diagram of film growth chamber provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
An embodiment of the present invention provides a kind of film growth chamber, which can use Organometallic Chemistry
CVD method carrys out growing film, it is of course also possible to use carrying out growing film the methods of physical vapour deposition (PVD), the present invention is not
It is only limitted to this.The present embodiment only by taking the film growth chamber using mocvd method growing film as an example come
The concrete structure of film growth chamber is illustrated.
Film growth chamber in the present embodiment is square chamber, in the square chamber there is at least one pallet to place
Area, the pallet rest area are used for the square pallet for placing the substrate for carrying at least one film to be grown, wherein, which can
Think silicon wafer or sapphire wafer etc..
Also, the top surface of the square chamber has at least one air intake structure, which includes running through chamber top surface
Air admission hole and be connected with air admission hole and positioned at the square even device of air of rectangular cavity room inside top surface, each even device of air is positioned at extremely
The top of a few pallet rest area, the pallet that the gas which is used to air admission hole being passed through uniformly is spurted to lower section are put
Area is put, so that the substrate surface for the square pallet carrying that pallet rest area is placed generates uniform film.
Wherein, can be by flanged joint between even device of air and air admission hole, the gas that air admission hole is passed through uniformly divides
It is fitted in even device of air.Also, even device of air can include multiple circular or square puff prot, these puff prots are uniformly distributed
In the bottom surface of even device of air, gas is uniformly spurted to the substrate surface to the square pallet carrying of lower section.
In order to grow the uniform film of high quality on substrate, it is necessary to form uniform gas between puff prot and substrate
Stream, the air-flow sprayed due to puff prot can along the square flowing in rectangular cavity ceiling face short side side, gas border condition can other side
The width of shape chamber has certain limitation, still, since the top surface of square chamber has air intake structure, square chamber
Length is not restricted by, that is to say, that the length of square chamber can unrestrictedly increase, as long as the top of the increased part of chamber
Air intake structure is set on face, you can forms uniform air-flow above the indoor square pallet of chamber.It is thin in the present invention based on this
The quantity of film growth chamber once open ended substrate is more, substantially increases the production capacity of film growth apparatus.
In film growth chamber provided in an embodiment of the present invention, the top surface of chamber can have an air intake structure, also may be used
With with multiple air intake structures.Illustrated below by taking the top surface of film growth chamber has multiple air intake structures as an example, such as Fig. 1
It is shown, Fig. 1 be the film growth chamber cross-sectional view, length of multiple air intake structures 1 along square 01 top surface 001 of chamber
Side extending direction is arranged in order, and the bottom width of the even device of air 10 in each air intake structure 1 is equal to rectangular cavity ceiling
The width in face 001, the sole length of the even device of air 10 in each air intake structure 1 is at least below or equal to rectangular cavity ceiling face
The half of 001 length.Due to being mutually independent structure between each air intake structure 1, same rectangular cavity ceiling face 001
On the concrete structure of air intake structure 1 may be the same or different, 1 specific constructive form of air intake structure and air intake structure 1
Between gap size can specifically be designed according to specific thin film growth process.
In an embodiment of the present embodiment, as shown in Figure 1, each air intake structure 1 can include one into
Stomata, can also include two air admission holes.Two air admission holes i.e. the first air admission hole is included with each air intake structure 1 in the present embodiment
11 and second illustrate exemplified by air admission hole 12, and based on this, the even device of air 10 in the air intake structure 1 includes and the first air admission hole
First even gas region of 11 connections and the second even gas region being connected with the second air admission hole 12, wherein, the first even gas region includes
Multiple first puff prots 101, the second even gas region include multiple second puff prots 102, the first puff prot 101 and the second puff prot
102 are spaced, and the first puff prot 101 and the second puff prot 102 are evenly distributed on the bottom surface of even device of air 10.
Specifically, as shown in Fig. 2, Fig. 2 is a kind of structure diagram of even device of air 10.First puff prot 101 and second
Puff prot 102 is strip structure, and the first puff prot 101 of each strip structure is all connected with the first air admission hole 11, each
Second puff prot 102 of shape structure is all connected with the second air admission hole 12, optionally, spaced first puff prot 101 and
Two puff prots 102 form pectinate texture as shown in Figure 2, or form grating structure as shown in Figure 3.Spaced first
101 and second puff prot 102 of puff prot can make the gas that the gas that the first air admission hole 11 is passed through and the second air admission hole 12 are passed through
It is uniformly mixed after ejection in tray upper surface, in favor of growing uniform film.
By taking growing nitride as an example, gas that the first air admission hole 11 is passed through is ammonia, the gas that the second air admission hole 12 is passed through
For MO sources, ammonia enters film growth chamber by pectinate texture and is in divergent shape after the ejection of the first puff prot 101, and adjacent
The second puff prot 102 spray MO sources reach jointly lower section substrate on carry out film growth.
Need further exist for explanation, the length of the puff prot of the strip structure in the present embodiment preferably with rectangular cavity ceiling
The width in face is equal, and the width and spacing of the puff prot of strip structure can be different according to the progress of the difference of thin film growth process
Design, under normal circumstances, the width of bar shaped puff prot is between 0.1mm~0.3mm, including endpoint value；Between bar shaped puff prot
Spacing between 3mm~20mm, including endpoint value.
Certainly, the present invention is not limited to this, in another embodiment, the first puff prot 101 and the second spray
The shape of gas port 102 can be circular configuration, as shown in figure 4, the first puff prot 101 and the second puff prot 102 are to arrange as unit
It is spaced along line direction, for example, the puff prot of the 1st row is all the first puff prot 101, the puff prot of the 2nd row is all the second spray
The puff prot that gas port the 102, the 3rd arranges all is the first puff prot 101, and the puff prot of the 4th row is all the second puff prot 102, with such
Push away.In other embodiments, the first puff prot 101 and the second puff prot 102 can be with behavior units along between column direction
Every arrangement, alternatively, every one first puff prot 101 is spaced along line direction and the second puff prot 102, meanwhile, first jet
Mouth 101 is spaced along column direction and the second puff prot 102, as shown in Figure 5.
Equally, the length for the array of circular apertures that multiple 101 and second puff prots 102 of circular first puff prot are formed preferably with
The width in rectangular cavity ceiling face is equal, and the aperture of circular puff prot and spacing can carry out not according to the different of thin film growth process
Same design, under normal circumstances, the aperture of circular puff prot is between 0.1mm~3mm, including endpoint value；Circular puff prot it
Between spacing between 0.5mm~20mm, including endpoint value.
Further, the discharging surface of the first puff prot 101 in the present embodiment or the second puff prot 102 can be with one
The inclined plane of angle is determined, to increase the spray volume of gas.As shown in fig. 6, the discharging surface of the second puff prot 102 includes sloping inwardly
Surface A 1 and A2, wherein, discharging surface A1 and A2 are oppositely arranged so that the second puff prot 102 spray gas can be more equal
Mix evenly, the angle of inclination and space D of discharging surface A1 and A2 adjust, its angle of inclination generally 30 °~60 ° it
Between.
In another embodiment of the invention, even device of air 10 can pass through pipeline and the first air admission hole 11 and the second air inlet
Hole 12 connects, and has control valve on the pipeline, which is used for the gas and second being passed through in the first air admission hole 11
Gas that air admission hole 12 is passed through is passed through in even device of air 10 uniformly after mixing, then by the mixed gas, and passes through even device of air 10
Mixed gas, is uniformly spurted the substrate table to the square pallet carrying of lower section by the multiple circular or square puff prot on bottom surface
Face.
Explanation is needed further exist for, as shown in Figure 1, in the rectangular cavity room in the present embodiment there are multiple pallets to place
A square pallet 2 is placed in area, each pallet rest area, wherein, the quantity of the indoor square pallet 2 of chamber can be according to the dress of chamber
Carrying capacity adjusts.Multiple square pallets 2 are arranged in order along the long side extending direction of square chamber, and at least one square pallet
2 are located at the lower section of an air intake structure 1.Also, the square pallet 2 in the present invention can be graphite support disk, carborundum pallet or
Graphite pallet coated with silicon carbide film layer etc..
Further, the upper surface of the square pallet 2 can have the various sizes of substrate bearing groove 20 of different shape, should
Bearing groove 20 can be circle, as shown in figure 8, the diameter of the circle bearing groove can be 2 inches, 4 inches, 6 inches, 8 inches
More than and.Alternatively, as shown in fig. 7, the bearing groove 20 can be square, the length of side of the square bearing groove can be 2 inches, 4 English
It is very little, 6 inches, 8 inches and more than.Compared with circular bearing groove, square bearing groove can improve the utilization rate of square pallet 2, i.e. phase
Square pallet 2 with area can have more square bearing grooves, and then carry more square substrates.Certainly, it is of the invention
It is not limited to that, the concrete shape and size of bearing groove 20 can be designed according to the shape of substrate.
In addition, on the basis of any of the above-described embodiment, as shown in Figure 1, film growth chamber provided by the invention is side
The bottom of shape chamber has the exhaust outlet that multiple long side extending directions along square chamber are arranged in order.Specifically, the exhaust
Mouth includes walkthrough gas port 30 and the main vent 31 communicated with walkthrough gas port 30, optionally, walkthrough gas port 30 and main vent 31
All it is circular stomata, and the aperture of main vent 31 is more than the aperture of walkthrough gas port 30, the quantity of main vent 31 is less than or waits
In the quantity of walkthrough gas port 30.Further, multiple walkthrough gas ports 30 are set gradually along the long side extending direction of square chamber
In square chamber-side or bottom surface, the gas after being reacted in chamber is uniformly discharged, then is discharged by main vent 31 square
The outside of chamber.The position of walkthrough gas port 30 and main vent 31, size and spacing can be according to specific thin in the present invention
Film growth technique is designed.
On the basis of any of the above-described embodiment, as shown in Figure 1, film growth chamber provided by the invention further includes heating
Device, the heating unit include multiple heating elements 4, and at least one heating element 4 is correspondingly arranged under a square pallet 2
Side, to control the film growth temperature of the substrate in square pallet 2.Heating element 4 in the present embodiment heats for pellet resistance
Or Filamentous resistance heating, as shown in figure 9, heating element 4 can also be the laminated structure being bent into by heater strip, certainly, this hair
Bright to be not limited to that, the structure and shape of heating plate or heater strip can be designed as the case may be.Preferably, heat
The area of component is equal with the base area of square pallet 2, is evenly heated with the substrate in square shaped pallet 2.
On the basis of any of the above-described embodiment, as shown in Figure 1, film growth chamber provided by the invention further includes transmission
Device 5, the transmitting device 5 are used for before film growth the lower section that square pallet 2 is transmitted to corresponding even device of air 10, or
Person controls square pallet 2 to do reciprocal operation during film is grown, so that the gas of the top of square pallet 2 can be mixed uniformly
Close, and then improve the uniformity of the film grown.Specifically, the transmitting device 5 can include load carrier, transmission mechanism and
Driving mechanism, the load carrier can be conveyer belt etc., and transmission mechanism can be gear of drive conveyer belt movement etc., driving machine
Structure can be engine etc., wherein, in the present embodiment square pallet 2 can be controlled to move reciprocatingly by transmission mechanism, also may be used
To drive square pallet 2 to move reciprocatingly by separated reciprocator.
Based on this, which can also load square pallet 2 with manipulator cooperation and be transferred to even device of air 10
On the pallet rest area of lower section, as shown in Figure 10, Figure 10 be square chamber overlooking the structure diagram, square chamber and manipulator
There is slide valve 60 between chamber.Before growing film is started, slide valve 60, the machinery in manipulator chamber 61 are opened
Arm 62 is moved in pallet locker room 63, and the square pallet 2 in pallet locker room 63 is transmitted to the indoor transmission of rectangular cavity
On the load carrier of device 5, and square pallet 2 is moved to by corresponding pallet rest area by transmitting device 5.Grown in film
After, the indoor square pallet 2 of rectangular cavity can also be taken out by mechanical arm 62.
Certainly, film growth chamber provided by the invention can also include cooling water system and pumped vacuum systems etc., this hair
It is bright to be not limited to that.Wherein, cooling water system is used to cool down to the square chamber after growing film, and pumped vacuum systems is used
In the extraction indoor air of rectangular cavity, the purity of gas being passed through with guarantee etc. before film is grown.
Below using substrate as sapphire substrate, exemplified by the film of growth is gallium nitride film, to provided by the invention thin
The workflow of film growth chamber is described.First, disposably by the sapphire of 2 inches of multi-disc (about 10~300)
Substrate is loaded on multiple square pallets 2, is opened slide valve 60, is transferred to first square pallet 2 by mechanical arm 62
On transmitting device 5, drive first square pallet 2 to move the distance of a pallet by transmitting device 5, pass through manipulator afterwards
Second square pallet 2 is transferred on transmitting device 5 by arm 62, and first square pallet 2 and second is driven by transmitting device 5
A square pallet 2 moves the distance of a pallet, and so on, put until 4 square pallets 2 are moved to corresponding pallet
After putting area, slide valve 60 is closed.
Square chamber is closed, and after square shaped chamber reaches certain vacuum, substrate is heated to by heating unit
About 1050 DEG C, while hydrogen is passed through, carry out HIGH TEMPERATURE PURGE.A certain proportion of reacting gas trimethyl gallium and ammonia are then passed to,
Using nitrogen or hydrogen as carrier gas, trimethyl gallium is passed through square chamber interior from first air admission hole 11 in rectangular cavity ceiling face, will
Ammonia is passed through square chamber interior from the second air admission hole 12, by even device of air that trimethyl gallium and ammonia uniform discharge is precious to indigo plant
Stone substrate surface, wherein trimethyl gallium gas are sprayed from the first puff prot 101, and ammonia is sprayed from the second puff prot 102, trimethyl
Gallium and ammonia are heated in process for sapphire-based on piece decomposites gallium atom and nitrogen-atoms, and one is deposited in the process for sapphire-based on piece of 0001 crystal orientation
Layer gallium nitride single crystal film.According to different process conditions, such as change the species of gas source and change the temperature of sapphire substrate,
The epitaxial wafer of different structure can be grown, the present invention does not limit the structure of film specifically.
Film growth chamber provided in this embodiment, the length of square chamber can unrestrictedly increase, as long as rectangular cavity
Air intake structure is provided with the top surface in room increase region, can just be provided for the substrate in the square pallet of lower section and meet that film is uniform
The uniform gas of growth demand, so as to improve the useful load of film growth chamber and production capacity.
The embodiment of the present invention additionally provides a kind of film grower, which includes as above any implementation
The film growth chamber that example provides, not only production capacity is high for film grower provided in this embodiment, but also with film growth
The advantages that flow and flow pattern are simple, and the design of heating system is more convenient.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.To the upper of the disclosed embodiments
State bright, professional and technical personnel in the field is realized or used the present invention.A variety of modifications to these embodiments are to ability
It will be apparent for the professional technician in domain, the general principles defined herein can not depart from the present invention's
In the case of spirit or scope, realize in other embodiments.Therefore, the present invention be not intended to be limited to it is shown in this article these
Embodiment, and it is to fit to the most wide scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. a kind of film growth chamber, it is characterised in that the film growth chamber is square chamber；
There is at least one pallet rest area, the pallet rest area carries at least one for placement in the rectangular cavity room
The square pallet of the substrate of film to be grown；
The top surface of the square chamber has at least one air intake structure, the air intake structure include air admission hole and with the air inlet
The square even device of air of hole connection, each even device of air is located at the top of at least one pallet rest area, described even
The gas that device of air is used to the air admission hole being passed through uniformly spurts the pallet rest area to lower section, so that the pallet rest area
The substrate surface for the square pallet carrying placed generates uniform film；
The air intake structure includes the first air admission hole and the second air admission hole, and the even device of air includes connecting with first air admission hole
The the first even gas region connect and the second even gas region being connected with second air admission hole；
The first even gas region includes multiple first puff prots, and the second even gas region includes multiple second puff prots, institute
State the first puff prot and second puff prot is spaced, and first puff prot and second puff prot are uniformly distributed
In the bottom surface of the even device of air.
2. film growth chamber according to claim 1, it is characterised in that the even device of air includes multiple circular or side
The puff prot of shape, the multiple puff prot are evenly distributed on the bottom surface of the even device of air, gas are uniformly spurted to lower section
Square pallet carrying substrate surface.
3. film growth chamber according to claim 1, it is characterised in that first puff prot and the second puff prot are
Strip structure, spaced first puff prot and the second puff prot form pectinate texture or grating structure；
Alternatively, first puff prot and the second puff prot are circular configuration.
4. film growth chamber according to claim 3, it is characterised in that first puff prot or the second puff prot
Discharging surface is inclined plane.
5. film growth chamber according to claim 1, it is characterised in that the even device of air passes through pipeline and described the
One air admission hole and the connection of the second air admission hole, have control valve on the pipeline, the control valve for described first into
After gas mixing that the gas and second air admission hole that stomata is passed through are passed through is uniform, the mixed gas is passed through the even gas
In device.
6. film growth chamber according to claim 1, it is characterised in that the bottom of the square chamber has multiple edges
The exhaust outlet that the long side extending direction of the square chamber is arranged in order, the exhaust outlet is used for will be anti-in the rectangular cavity room
Gas after answering emits.
7. film growth chamber according to claim 1, it is characterised in that the film growth chamber further includes transmission dress
Put, the transmitting device is used for the square tray transport before film growth to the lower section of the even device of air, thin
Film controls the square pallet to move reciprocatingly during growing, so that the gas above the square pallet uniformly mixes.
8. film growth chamber according to claim 1, it is characterised in that the film growth chamber further includes heating dress
Put, the heating unit includes multiple heating elements, and at least one heating element is correspondingly arranged at a square pallet
Lower section, to control the film growth temperature of the substrate in the square pallet.
9. a kind of film grower, it is characterised in that including claim 1~8 any one of them film growth chamber.
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