CN105609412A - Rapid annealing preparation method of Al-Si<+> ohmic contact electrode - Google Patents
Rapid annealing preparation method of Al-Si<+> ohmic contact electrode Download PDFInfo
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- CN105609412A CN105609412A CN201610166858.4A CN201610166858A CN105609412A CN 105609412 A CN105609412 A CN 105609412A CN 201610166858 A CN201610166858 A CN 201610166858A CN 105609412 A CN105609412 A CN 105609412A
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- 229910018125 Al-Si Inorganic materials 0.000 title claims abstract description 24
- 229910018520 Al—Si Inorganic materials 0.000 title claims abstract description 24
- 238000000137 annealing Methods 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000005566 electron beam evaporation Methods 0.000 abstract description 3
- 238000001771 vacuum deposition Methods 0.000 abstract description 3
- 239000007888 film coating Substances 0.000 abstract 2
- 238000009501 film coating Methods 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000011259 mixed solution Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
The invention relates to a magnetron sputtering combined rapid annealing high-efficiency preparation method of an Al-Si<+> ohmic contact electrode, belonging to the technical field of semiconductor preparation. The preparation method comprises the following steps: based an ultrahigh vacuum magnetron sputtering technology, firstly growing an Al film with a certain thickness at a certain temperature by using the magnetron sputtering technology at the vacuum degree of 3.0*10<-4>Pa in the presence of Ar gas serving as working gas; and then carrying out rapid annealing treatment on the Al film by using a rapid annealing furnace to obtain the Al-Si<+> ohmic contact electrode. With adoption of the method, the preparation of the Al-Si<+> ohmic contact electrode is sped up; the defects existing in a vacuum evaporation method and an electron beam evaporation method that only low-melting-point and high-vapor-pressure elements and compounds can be sputtered, the adhesive of a sputtered film to a substrate is poor, and the density of the sputtered film is low can be overcome; the obtained Al-Si<+> ohmic contact electrode has the advantages of high film purity, easy control in film coating, high deposition rate, large film coating area, good linear contact and good stability; in addition, equipment is simple, and use and maintenance costs are low. Therefore, the method is a simple and efficient Al-Si<+> ohmic contact electrode preparation method which can be put into industrial generalization easily.
Description
Technical field
The present invention relates to the preparation method of semi-conducting electrode material, particularly use short annealing mode to prepare Al-Si+Ohm contact electrode technology, the Al film of preparing based on magnetically controlled DC sputtering low temperature, is sputtered in Si by low temperature+Al film on sheet is placed in quick anneal oven, efficiently prepares Al-Si+The preparation method of Ohm contact electrode.
Background technology
Ohmic contact be on semiconductor equipment, have linearity and symmetrical current-voltage characteristic curve (I-VCurve) region. If current-voltage characteristic curve is nonlinear, so this contact is called Schottky contacts. Typical case's Ohmic contact is the sheet metal of sputter or evaporation, low resistance, and the Ohmic contact of stable contact is the key factor that affects performance of integrated circuits and stability thereof, their preparation is the groundwork that circuit is manufactured.
Ohmic contact is the key technology during semiconductor is manufactured, and object is that while making semi-conducting material apply voltage, the pressure drop of contact position is enough little so that do not affect the performance of device. If the poor reliability of ohmic contact resistance, can make the ON resistance of device raise, when serious, can change the performance of device.
See theoretically, the factor that affects metal and semiconductor formation Ohmic contact mainly contains two: metal, semi-conductive work function and semi-conductive surface density of states. For given semiconductor, on the impact contacting between metal-semiconductor, form Ohmic contact from work function, for N-shaped semiconductor, should select the metal that work function is little, " Ws makes to form between metal and semiconductor the anti-barrier layer of N-shaped to meet Wm. And for p-type semiconductor, should select metal that work function is large and semiconductor to form and contact, meet Wm " Ws, make to form between metal and semiconductor the anti-barrier layer of p-type. But due to the impact of surface state, the impact that work function forms Ohmic contact weakens, for N-shaped semiconductor, even if " Ws, still can not the good Ohmic contact of forming property between metal and semiconductor for Wm.
At present, in production reality, be mainly to utilize tunnel effect principle on semiconductor, to manufacture Ohmic contact. Consider from work function angle, when metal and semiconductor will form Ohmic contact, for N-shaped semiconductor, metal work function is less than semi-conductive work function, and the metal material that meets this condition has Ti, In. For p-type semiconductor, metal work function is greater than semi-conductive work function, and the metal material that meets this condition has Cu, Ag, Pt, Ni. Al is the highest metallic element of content in the earth's crust, and global Al industry is also very flourishing, and reserves exceed 25,000,000,000 tons. Al also has very unique physicochemical characteristics simultaneously, and the outer outermost electron of its core has three, becomes free electron thereby easily lose, so electric conductivity excellence, resistivity is about 2.76 μ Ω cm-1. The energy density of Al is high in addition, the oxide-film densification that passivation forms. These factors make Al become the common used material of preparation Ohmic contact.
Magnetron sputtering is the one of physical vapour deposition (PVD), and its technology can be divided into magnetically controlled DC sputtering and rf magnetron sputtering, and wherein radio-frequency sputtering is mainly for the very poor material of electric conductivity. Two kinds of technology of preparation Al membrane electrode all can be used, but general use is d.c. sputtering. Its principle is to utilize the cation that gas discharge produces under the effect of highfield, to bombard at a high speed the target as anode, makes target material Atom (or ion) overflow and then be deposited on plated substrate surface, forms needed film
The preparation method of Al film Ohm contact electrode mainly comprises magnetically controlled sputter method, vacuum deposition method, electron beam evaporation method etc. at present. Magnetron sputtering plating main advantage compared with other two kinds of methods is that any material can sputter, especially the element of high-melting-point, low-steam pressure and compound, and tack between sputtered film and substrate is good, sputtered film density is high, pin hole is few, film purity is high, equipment is simple, plated film is easy to control, and sedimentation rate is fast, and plated film area is large. In order to adapt to the demand for development of device microminiaturization, the preparation of electrode is also towards the future development of filming, high efficiency. This just prepares and has higher requirement electrode, improves electrical contact performance and ensures that the Ohmic contact preparation method of stability is urgent need to solve the problem in this field.
Summary of the invention
In order to adapt to the demand for development of device microminiaturization, the preparation of electrode is also towards the future development of filming, transparence, high efficiency. The invention provides one and rapidly and efficiently prepare Al-Si+The method of Ohm contact electrode, the method is prepared efficiently Al-Si on the basis of simple process, low cost+Ohm contact electrode.
The technical solution adopted for the present invention to solve the technical problems is: adopting FJL560III type superhigh vacuum magnetron sputtering instrument is growth apparatus, taking the low-doped Si(100 of N-shaped) single-sided polishing crystal is as substrate, and substrate thickness is 0.50mm, and resistivity is 1-3 Ω .cm. Use standard Shiraki method to clean to substrate, then in HF acid solution rinsing to remove the natural oxidizing layer of substrate surface, complete the H passivation to substrate surface simultaneously, after drying up with high pure nitrogen, substrate is put into magnetron sputtering vacuum chamber rapidly and carry out the growth of Al film, be then placed in quick anneal oven short annealing processing.
On substrate, before depositing Al film, first magnetron sputtering chamber is carried out to evacuation processing, treat that base vacuum reaches 3.0 × 10-4When Pa, Si substrate is heated, temperature arrives 350oWhen C, regulating sputtering pressure is 1.0Pa, argon flow amount is 10SCCM, then use magnetic control d.c. sputtering Al film, sputtering sedimentation thickness is 2nm, after sputter completes naturally cooling obtain initial sample, then by initial sample put into RTP-1000D4 type quick anneal oven carry out suitable temperature short annealing process obtain Al-Si+Ohmic contact sample. The electric property of sample is tested by the CHI660D type electrochemical workstation of Shanghai Chen Hua Instrument Ltd. research and development. All tests all at room temperature complete.
Compare with electron beam evaporation method with the vacuum deposition method of common preparation Al film Ohm contact electrode, the main advantage of magnetron sputtering plating associating short annealing processing is efficiently to prepare fast, any material can sputter, especially the element of high-melting-point, low-steam pressure and compound, and tack between sputtered film and substrate is good, and sputtered film density is high, pin hole is few, film purity is high, equipment is simple, plated film is easy to control, and sedimentation rate is fast, and plated film area is large. Use quick anneal oven annealing in process can shorten annealing time, save the spent time of cooling of heating up, be convenient to suitability for industrialized production.
The invention has the beneficial effects as follows, equipment operating is simple, be easy to safeguard, the preparation growth efficient quick of Al film Ohm contact electrode, and Ohmic contact quality is high, this for adapting to device microminiaturization, high efficiency realizes Industry Promotion that possibility scheme is provided.
Brief description of the drawings
Fig. 1 for adopt magnetron sputtering then Rapid Annealing Method prepare Al-Si+The integrated artistic flow process of Ohm contact electrode;
Fig. 2 is for characterizing Al-Si+The current-voltage characteristic curve testing result of Ohm contact electrode sample one;
Fig. 3 is for characterizing Al-Si+The current-voltage characteristic curve testing result of Ohm contact electrode sample two.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is further described.
In Fig. 1, the operating process of embodiment A is as follows:
1. with analyzing at room temperature ultrasonic 5min of pure acetone, deionized water rinsing. This step repeats 3 times.
2. with at room temperature ultrasonic 5min of absolute ethyl alcohol, deionized water rinsing. This step repeats 3 times.
3. first dense H2SO4(98%):H2O2In the mixed solution of=2:1, boil 3-5min, deionized water rinsing 2-3 time, rear with HF (10%): H2The mixed solution of O=1:10 soaks 30s, deionized water rinsing 2-3 time.
4. first dense HNO3Boil 3min, deionized water rinsing 2-3 time, rear with HF (10%): H2The mixed solution of O=1:10 soaks 30s, deionized water rinsing 2-3 time. This step repeats 2 times.
5. first dense HNO3：H2O2：H2The mixed solution of O=1:1:4 boils 5min, and deionized water rinsing 2-3 time is rear with HF (10%): H2The mixed solution of O=1:10 soaks 30s, deionized water rinsing 2-3 time.
6. use HCL:H2After boiling, the mixed solution of O=3:1 adds and H2The isopyknic H of O2O2Transparent to solution, deionized water rinsing 2-3 time.
7. with HF (10%): H2The mixed solution rinsing 30-60s of O=1:40, deionized water rinsing 2-3 time.
8. after drying up with nitrogen, be placed in sample carrier, send into magnetron sputtering apparatus vacuum chamber.
In Fig. 1, the operation scheme of Embodiment B is as follows:
1. magnetron sputtering chamber vacuum is evacuated to 3 × 10-4Pa。
2. pair substrate is first heated to 350OC。
3. in sputtering chamber, pass into purity and be 99.999% Ar gas, flow is 10sccm, starts Si target radio-frequency sputtering device, and sputtering pressure is adjusted to 3-5Pa, and sputtering power is set to 90-100w, carries out pre-sputtering 600s.
4. regulate operating air pressure to 1.0Pa, sputtering power is 90w, sputter 600s, naturally cooling.
In Fig. 1, the execution details of Embodiment C is as follows:
1. in quick anneal oven, pass into N2Reach 0MPa to air pressure
2. open furnace chamber, put into sample, first vacuumize, after pass into N2。
3. heating curve is set, is heated to 550OC, annealing time is 600s.
4. water-cooled cooling, takes out sample after shutdown.
In Fig. 1, embodiment D is sample characterization conventional method.
Fig. 2 provides Al-Si+The current-voltage characteristic curve of Ohm contact electrode sample one. Can easily find out that through curve current-voltage characteristic curve linear relationship is obvious, be Ohmic contact, and contact resistivity is 0.08 Ω .cm2。
Fig. 3 provides Al-Si+The current-voltage characteristic curve of Ohm contact electrode sample two. Can easily find out that through curve current-voltage characteristic curve linear relationship is obvious, be Ohmic contact, and contact resistivity is 0.1 Ω .cm2。
Claims (6)
1. a magnetron sputtering associating short annealing technology is prepared Al-Si+The method of Ohm contact electrode, is characterized in that:
Adopting the low-doped N-type single crystalline Si of single-sided polishing is substrate, and taking superhigh vacuum magnetron sputtering instrument as Preparation equipment, quick anneal oven is post-processed equipment, and magnetron sputtering temperature is 200-550OC, the quick anneal oven heating-up time is 70-150s, annealing temperature is 450-700OC, annealing time is 300-1200s, contact resistivity is 0.05-0.5 Ω .cm2, current-voltage characteristic curve is linear.
2. prepare according to claim 1 Al-Si+The method of Ohm contact electrode, is characterized in that Al-Si+The growth substrates of Ohm contact electrode is that high preferred orientation is that (110), thickness are that 0.3-0.8mm, resistivity are the low-doped N-type single crystalline Si of single-sided polishing of 1-8 Ω .cm.
3. prepare according to claim 1 Al-Si+The method of Ohm contact electrode, is characterized in that before sputter-deposited thin films, sputter cavity vacuum≤3.0 × 10-4Pa, heats to 200-550 to substrateOC processes.
4. prepare according to claim 1 Al-Si+The method of Ohm contact electrode, it is characterized in that in magnetic control sputtering device the mode depositing Al film with vertical sputter between target and substrate, and before depositing Al film, start in advance Al target d.c. sputtering, remove target material surface impurity by pre-sputtering, actual conditions is as follows: the Ar gas that purity is 99.999% is working gas, and flow is 10SCCM; Sputtering pressure is 2-5Pa; Penetrating power is 50-150w; Sputtering time is 60-6000s.
5. prepare according to claim 1 Al-Si+The method of Ohm contact electrode, first adds hot temperature to 300-400 by substrate while it is characterized in that in described step depositing Al filmOC, taking d.c. sputtering as depositional mode, actual conditions is as follows: Ar throughput is 10SCCM; Sputtering pressure is 1.0-2.0Pa; Penetrating power is 50-150w; Deposit thickness is 100-800nm, and after sputter, cooling obtains initial sample naturally at once.
6. prepare according to claim 1 Al-Si+The method of Ohm contact electrode, is characterized in that in described step, being treated to of initial sample being put into rapidly to quick anneal oven by sample carries out short annealing processing, and annealing parameter is as follows: with N2For protective gas, annealing temperature is 450-700OC, the heating-up time is 70-150s, annealing time is 300-1200s.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0458353A2 (en) * | 1990-05-24 | 1991-11-27 | Sumitomo Electric Industries, Ltd. | Ohmic contact electrodes for n-type semiconductor cubic boron nitride |
| US6599644B1 (en) * | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| CN101483198A (en) * | 2009-02-03 | 2009-07-15 | 苏州大学 | Ag/silicon composite structure ultraviolet probe and manufacturing method thereof |
| CN101527331A (en) * | 2009-03-26 | 2009-09-09 | 上海大学 | Preparing method of diamond thin-film field-effect photo-electric detector |
| CN101728257A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Preparation method of gate dielectric/ metal gate integrated structure |
| CN103474526A (en) * | 2013-07-25 | 2013-12-25 | 复旦大学 | Manufacturing method for infrared LED based on black-silicon material |
-
2016
- 2016-03-23 CN CN201610166858.4A patent/CN105609412A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0458353A2 (en) * | 1990-05-24 | 1991-11-27 | Sumitomo Electric Industries, Ltd. | Ohmic contact electrodes for n-type semiconductor cubic boron nitride |
| US6599644B1 (en) * | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| CN101728257A (en) * | 2008-10-24 | 2010-06-09 | 中国科学院微电子研究所 | Preparation method of gate dielectric/ metal gate integrated structure |
| CN101483198A (en) * | 2009-02-03 | 2009-07-15 | 苏州大学 | Ag/silicon composite structure ultraviolet probe and manufacturing method thereof |
| CN101527331A (en) * | 2009-03-26 | 2009-09-09 | 上海大学 | Preparing method of diamond thin-film field-effect photo-electric detector |
| CN103474526A (en) * | 2013-07-25 | 2013-12-25 | 复旦大学 | Manufacturing method for infrared LED based on black-silicon material |
Non-Patent Citations (1)
| Title |
|---|
| 陈栋: "欧姆接触A1电极的研究及光电探测器件试制", 《中国优秀硕士学位论文全文数据库》 * |
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