CN105609394A - Preparation method of field ion emitter - Google Patents

Preparation method of field ion emitter Download PDF

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Publication number
CN105609394A
CN105609394A CN201610104405.9A CN201610104405A CN105609394A CN 105609394 A CN105609394 A CN 105609394A CN 201610104405 A CN201610104405 A CN 201610104405A CN 105609394 A CN105609394 A CN 105609394A
Authority
CN
China
Prior art keywords
preparation
emitter
emission
field
carbon nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610104405.9A
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Chinese (zh)
Inventor
刘宇明
张凯
李蔓
赵春晴
刘向鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Institute of Spacecraft Environment Engineering
Original Assignee
Beijing Institute of Spacecraft Environment Engineering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Institute of Spacecraft Environment Engineering filed Critical Beijing Institute of Spacecraft Environment Engineering
Priority to CN201610104405.9A priority Critical patent/CN105609394A/en
Publication of CN105609394A publication Critical patent/CN105609394A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
    • F03H—PRODUCING A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
    • F03H1/00—Using plasma to produce a reactive propulsive thrust
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Abstract

The invention discloses a preparation method of a field ion emitter. The method comprises the step as follows: a low-melting-point metal indium (In) or gallium (Ga) layer coats the surface of a carbon nanotube array through thermal evaporation or electronic beam evaporation and magnetron sputtering methods as an emitter for field emission. The preparation method disclosed by the invention can effectively lower the preparation difficulty of the field ion emitter and reduce the dimension of the emitter, so that the overall performance of the field ion emitter is improved. The emitter is put into a field ion emission test device, and can achieve emission at 1500V voltage; and 3,000V-5,000V voltage is needed for emission by a micron-scale sharp emitter in general.

Description

Field causes the preparation method of ion emitter
Technical field
The invention belongs to spacecraft propulsion technical field, particularly, the present invention relates to a kind of field cause fromThe preparation method of sub-emitter.
Background technology
It is a kind of physical phenomenon that field causes emission of ions phenomenon, and its principle is that liquid metal exists under highfieldUnder electrostatic field, produce induced charge on surface; Electric charge, under electrostatic field, produces electric field force,Thereby by flow of metal, form " Taylor " point; In the time that electrostatic field is enough large, " Taylor " tipMetallic atom will directly be extracted from metal bath surface by electric field force, and form ion, launch, form fromSubflow. Utilize the field of this physical phenomenon development to cause emission of ions technology in gravitational wave explorer satellite, the theory of relativityVerifying satellites etc. have important purposes without towing satellite fields, and it can provide sub-micro wild marjoram milli ox magnitudeThrust, can provide high-precision thrust control for satellite. Therefore, field causes emission of ions technology in boatThere is important effect in the micro-propelling of it device field, and it can provide the thrust of minimum sub-micro ox level, and comparesLeap high, this is that other Push Technologies cannot realize. And so little thrust control technology is surveyed at gravitational fieldAmount satellite, gravitational wave detection satellite etc. need important role on high accuracy control satellite.
Field causes emission of ions needs high electric field, must utilize pointed emitter, utilizes the most advanced and sophisticated electricity that strengthensField type, under low voltage, realizes larger electric-field intensity, thereby reaches liquid metal ionization, transmittingObject.
The emitter that field causes emission of ions has aperture or slit-shaped, and the large class of tip-like two. At needle pointIn shape emitter, generally adopt the method for machining or chemical attack, tungsten filament etc. is etched to transmittingBody, for example as shown in Figure 1, Fig. 1 has shown the needle point pattern that utilizes electrochemical method corrosion tungsten filament to form.The offshore companies such as Austrian ACRS adopt to obtain in this way pointed body, and recycling infiltrates existingResemble adhesion metal indium on pointed body, cause the emitter of emission of ions thereby must show up. But this transmittingBody tip curvature radius, generally 10 microns of left and right, is difficult to further reduce. Due to emitter tip curvatureRadius is less, and the emitting voltage needing is lower, and emitting performance is better, for this reason, is necessary that preparation is lessThe tip-like emitter of size, to solve more efficiently space device micro-propelling control problem in-orbit.
Summary of the invention
Given this, the object of the present invention is to provide a kind of new field to cause emission of ions preparation. ThisInvention utilize carbon nano pipe array, by the method for physical evaporation, on its surperficial evaporation indium (In) orPerson's gallium (Ga) metal, causes the emitter of emission of ions as field. The method can be by the size of emitterBe reduced to below 100nm.
To achieve these goals, the present invention adopts following technical scheme:
A kind of causes emission of ions preparation, comprises the steps:
On carbon nano pipe array surface, by hot evaporation or electron beam evaporation, magnetically controlled sputter method at carbonNano-tube array plated surface last layer low-melting-point metal indium (In) or gallium (Ga), cause ion as field and send outThe emitter of penetrating.
Wherein, described carbon nano pipe array is standby by CVD legal system, grows orientations in substrateCarbon nano pipe array.
Wherein, described substrate is silicon or metal.
Wherein, described metal is most metals, and conventional have iron, copper etc.
Wherein, carbon nano pipe array is put into vacuum coating equipment, reguline metal indium or gallium are put intoIn evaporator boat, under vacuum condition, utilize resistance heated method or electron beam heating means, by goldBelong to indium or gallium heating and melting, and evaporation, until the coating film thickness needing.
Wherein, obtain the nano wire of different curvature radius by controlling the thickness of plated film, cause ion as fieldEmitter.
Further, in carbon nano pipe array, CNT tip curvature radius and CNT diameter are basicUnanimously, be 20nm left and right.
Wherein, by controlling heating-up temperature, regulate plated film speed, plated film speed is 0.1nm/s to 5nm/s,Until reach the thickness needing, thickness is below 100nm.
Compared with prior art, preparation method of the present invention can reduce a preparation difficulty that causes ion emitterDegree, reduces the size of emitter, thereby improves an overall performance that causes ion emitter. By this emitterPut into field and cause emission of ions testing arrangement, it can realize transmitting under 1500V voltage. And generally adoptThe pointed emitter emitting voltage of micron order needs 3000-5000V.
Brief description of the drawings
Fig. 1 has shown the needle point pattern that utilizes electrochemical method corrosion tungsten filament to form;
Fig. 2 has shown the carbon nano pipe array surface topography preparing by CVD method before plating;
Fig. 3 has shown after surperficial evaporation the pattern after Ga on carbon nano pipe array surface, wherein, and the plating of GaCovering thickness is 100nm.
Fig. 4 has shown after surperficial evaporation the pattern of In on carbon nano pipe array surface, wherein, and the plating of InThickness is 100nm.
Fig. 5 has shown that field causes the preparation process schematic diagram of ion emitter.
In figure: 1-carbon nano pipe array, the 1.1st, substrate, the 1.2nd, CNT; The plating of 2-CNTFilm, wherein 2.1 is vacuum chambers, the 2.2nd, source metal (In or Ga), the 2.3rd, heater; 3-plated filmAfter carbon nano pipe array, the 3.1st, the metal level of carbon nano tube surface plating.
Detailed description of the invention
Causing emission of ions preparation below in conjunction with accompanying drawing to of the present invention is further described.
Preparation method's of the present invention basis is first to obtain carbon nano pipe array sample, this carbon nano-pipe arrayThe preparation of row sample has been maturation process at present, therefore do not elaborate at this. By CVD legal systemThe standby carbon nano pipe array sample obtaining can be grown on silicon or in metallic substrates, before its preparationPattern is referring to Fig. 2.
Method of the present invention is on carbon nano pipe array surface, by hot evaporation or electron beam evaporation, magneticControl sputtering method at carbon nano pipe array plated surface last layer low-melting-point metal indium (In) or gallium (Ga),As the emitter of field emission.
The coating material of embodiment mono-taking In as field emitter
Known carbon nano pipe array is put into vacuum chamber 2.1, and the pressure of vacuum chamber 2.1 is 1 × 10-3PaTo 1 × 10-1Pa, puts into In source metal 2.2 on heater 2.3. Vacuumize, under vacuum condition,Heating In source metal 2.2, is vaporized, and evaporation, to carbon nano pipe array, forms the CNT after plated filmArray 3, metal-coated layer 3.1 on it. Utilize the plated film speed in the measurement In sources such as quartz crystal oscillating balanceRate, by controlling heating-up temperature, regulates plated film speed 0.2nm/s, until reach the thickness of 100nm, carbonIn nano-tube array, CNT tip curvature radius and CNT diameter are basically identical, are a 20nm left sideRight. As shown in Figure 3, concrete preparation process is referring to the step in Fig. 5 for CNT pattern after plating In2。
The coating material of embodiment bis-taking Ga as field emitter
Known carbon nano pipe array is put into vacuum chamber 2.1, and the pressure of vacuum chamber 2.1 is 1 × 10-3PaTo 1 × 10-1Pa, puts into Ga source metal 2.2 on heater 2.3. Vacuumize, under vacuum condition,Heating Ga source metal 2.2, is vaporized, and evaporation, to carbon nano pipe array, forms the CNT after plated filmArray 3, metal-coated layer 3.1 on it. Utilize the plated film speed in the measurement In sources such as quartz crystal oscillating balanceRate, by controlling heating-up temperature, regulates plated film speed 0.2nm/s, until reach the thickness of 100nm, carbonIn nano-tube array, CNT tip curvature radius and CNT diameter are basically identical, are a 50nm left sideRight. As shown in Figure 4, concrete preparation process is referring to the step in Fig. 5 for CNT pattern after plating Ga2。
Subsequently carbon nano pipe array is taken out, obtained size and caused ion in the metal field of nanometer scale and send outBeam, referring to the step 3 in Fig. 5.
Utilize the method for physical vapor deposition, carbon nano tube surface is by evaporation last layer metal, new the receiving of formationRice noodles tip curvature radius is at 100nm, can obtain different curvature radius by controlling the thickness of plated filmNano wire, causes the emitter of ion as field. It is 100nm mono-that this method is easy to obtain radius of curvatureUnder emitter.
This emitter is put into field and cause emission of ions testing arrangement, it can realize and sending out under 1500V voltagePenetrate. And generally adopt the pointed emitter emitting voltage of micron order to need 3000-5000V.
Although above the detailed description of the invention of this patent has been given to describe in detail and explanation, should refer toBright, we can carry out various equivalences to above-mentioned embodiment according to the conception of patent of the present invention and changeAnd amendment, when its function producing does not exceed spiritual that description and accompanying drawing contain yet, all shouldWithin the protection domain of this patent.

Claims (8)

1. field causes an emission of ions preparation, comprises the steps:
On carbon nano pipe array surface, by hot evaporation or electron beam evaporation, magnetically controlled sputter method at carbonNano-tube array plated surface last layer low-melting-point metal indium (In) or gallium (Ga), as field emissionEmitter.
2. as claimed in claim 1 causes emission of ions preparation, wherein, and described CNTArray is standby by CVD legal system, grows the carbon nano pipe array of orientations in substrate.
3. as claimed in claim 2 causes emission of ions preparation, and wherein, described substrate is siliconOr metal.
4. as claimed in claim 2 causes emission of ions preparation, and wherein, described metal is ironOr copper.
5. as claimed in claim 1 causes emission of ions preparation, wherein, and by carbon nano-pipe arrayRow are put into vacuum coating equipment, reguline metal indium or gallium are put into evaporator boat, at vacuum conditionUnder, utilize resistance heated method or electron beam heating means, by indium metal or gallium heating and melting, andEvaporation, until the coating film thickness needing.
6. as claimed in claim 1 causes emission of ions preparation, wherein, and by controlling plated filmThickness obtain the nano wire of different curvature radius, cause the emitter of ion as field.
7. as claimed in claim 1 causes emission of ions preparation, wherein, and carbon nano pipe arrayMiddle CNT tip curvature radius and CNT diameter are basically identical, are 20nm left and right.
8. as claimed in claim 1 causes emission of ions preparation, wherein, heats by controlTemperature, regulates plated film speed, and plated film speed is 0.1nm/s to 5nm/s, until reach the thickness needing,Thickness is below 100nm.
CN201610104405.9A 2016-02-25 2016-02-25 Preparation method of field ion emitter Pending CN105609394A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110056491A (en) * 2019-05-14 2019-07-26 大连理工大学 A kind of carbon nano pipe array thruster

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120144796A1 (en) * 2009-12-21 2012-06-14 California Institute Of Technology Microfluidic electrospray thruster
CN102741969A (en) * 2010-02-05 2012-10-17 赛默菲尼根有限责任公司 Multi-needle multi-parallel nanospray ionization source
CN103606499A (en) * 2013-10-25 2014-02-26 北京卫星环境工程研究所 Method for preparing emitter of satellite field emission electric propeller

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120144796A1 (en) * 2009-12-21 2012-06-14 California Institute Of Technology Microfluidic electrospray thruster
CN102741969A (en) * 2010-02-05 2012-10-17 赛默菲尼根有限责任公司 Multi-needle multi-parallel nanospray ionization source
CN103606499A (en) * 2013-10-25 2014-02-26 北京卫星环境工程研究所 Method for preparing emitter of satellite field emission electric propeller

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
段君毅等: "铟场致发射电推力器的研制", 《固体火箭技术》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110056491A (en) * 2019-05-14 2019-07-26 大连理工大学 A kind of carbon nano pipe array thruster

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Application publication date: 20160525