CN105606269A - Capacitive pressure sensor with high linearity and manufacturing method thereof - Google Patents
Capacitive pressure sensor with high linearity and manufacturing method thereof Download PDFInfo
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- CN105606269A CN105606269A CN201510580359.5A CN201510580359A CN105606269A CN 105606269 A CN105606269 A CN 105606269A CN 201510580359 A CN201510580359 A CN 201510580359A CN 105606269 A CN105606269 A CN 105606269A
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Abstract
The invention discloses a capacitive pressure sensor with high linearity. The pressure sensor comprises a silicon substrate layer, a silicon dioxide layer and a polysilicon layer which are successively arranged from bottom to top. The silicon substrate layer is provided with a first cavity and four lower electrodes. The silicon dioxide layer is provided with a polysilicon supporting layer and a second cavity. The second cavity is connected to the first cavity. The polysilicon layer comprises a movable sensitive film layer, four upper electrodes and a polysilicon anchor area. One end of each upper electrode is connected to one end surface of the movable sensitive film layer through a connecting rod. The other end of each upper electrode is connected to the polysilicon anchor area through an elastic component. The lower electrodes are located below the connecting rod. End surfaces of the upper electrodes, which are close to the movable sensitive film layer, and end surfaces of the lower electrodes, which are far away from the first cavity, are in a same surface. The pressure sensor converts a longitudinal displacement change into a transverse area change so that the high linearity is possessed. Simultaneously, upper and lower pole plates of the pressure sensor are non-contacted so that device reliability is increased.
Description
Technical field
The present invention relates to a kind of pressure sensor, specifically, relate to a kind of condenser type with high linearity and pressPower sensor and preparation method thereof.
Background technology
In the product that utilizes silicon micromachining technology to realize, pressure sensor is to develop a comparatively ripe class. OrderBefore, pressure sensor has been widely used in various industry and biomedical sector. Capacitance pressure transducer, due toHigh sensitivity, better temperature performance, low-power consumption, without open temp drift, firm in structure, be subject to external carbuncle shadowRing the features such as little, become gradually a large focus of pressure sensor. The capacitive pressure of traditional variable area formula passesSensor also claims contact capacitance sensor, when pressure puts on movable sensitive film, by changing two-plateContact area, thereby the output capacitance of change sensor. Because the two-plate of sensor is in contact with one another, mayOccur that two-plate can not separate in the time that pressure removes, be sticked together, thereby bring the problem that reliability is not high.
Summary of the invention
Technical problem: technical problem to be solved by this invention is: a kind of condenser type with high linearity is providedPressure sensor and preparation method thereof, changes longitudinal transferring to of change in displacement horizontal area, has high linearDegree is non-contacting between the upper bottom crown of pressure sensor simultaneously, has improved the reliability of device.
Technical scheme: for solving the problems of the technologies described above, on the one hand, the embodiment of the present invention adopts one to have high lineProperty degree capacitance pressure transducer,, this pressure sensor comprises from bottom to top the layer-of-substrate silicon, two of laying successivelySilicon oxide layer and polysilicon layer; Wherein, in layer-of-substrate silicon, be provided with the first cavity and four bottom electrodes, the first cavityThrough-silicon substrate layer, bottom electrode is fixedly connected on the top of layer-of-substrate silicon, and four bottom electrodes are laid in the first cavitySurrounding; In silicon dioxide layer, be provided with polysilicon supporting layer and the second cavity, polysilicon supporting layer is fixedly connected onThe end face of layer-of-substrate silicon; The second cavity is positioned at the inner side of polysilicon supporting layer, and the second cavity and the first cavity companyLogical; Polysilicon layer comprises movable sensitive thin layer, four top electrodes, polysilicon anchor district, movable sensitive thin layerAll be positioned at directly over the second cavity with top electrode, and one end of each top electrode is thin by connecting rod and movable sensitiveOne end face of rete connects, and the other end of each top electrode is connected with polysilicon anchor district by elastic component; Connecting rodLay relative with elastic component, lays respectively at top electrode both sides; Polysilicon anchor district is fixedly connected on polysilicon supporting layerOn; Top electrode and bottom electrode are corresponding one by one, and bottom electrode is positioned at the below of connecting rod, and top electrode is near movably quickThe sense end face of thin layer and bottom electrode away from the end face of the first cavity in the same face.
As preferred version, described elastic component is made up of polysilicon, and elastic component is bent.
As preferred version, described movable sensitive thin layer, top electrode, polysilicon anchor district, elastic component and companyExtension bar is positioned at same plane.
On the other hand, the embodiment of the present invention provides a kind of preparation of the capacitance pressure transducer, with high linearityMethod, this preparation method comprises the following steps:
The first step: carry out phosphonium ion injection in layer-of-substrate silicon, form the bottom electrode of sensor;
Second step: the layer of silicon dioxide of growing in layer-of-substrate silicon layer, then adopts photoetching process at silicaOn layer, form the stop-layer of polysilicon supporting layer and wet etching;
The 3rd step: one deck polysilicon layer of growing on silicon dioxide layer, then adopts photoetching process, at polysiliconLayer photoetching forms top electrode, polysilicon anchor district, elastic component and the connecting rod of movable sensitive thin layer, sensor;
The 4th step: carry out anisotropic wet etch at the layer-of-substrate silicon back side, form the first cavity;
The 5th step: utilize anisotropic wet corrosion, etch stop layer, obtains the second cavity, thereby makes pressurePower sensor.
As preferred version, in the 3rd described step, power on very four, movable sensitive thin layer and top electrodeAll be positioned at directly over the second cavity, and one end of each top electrode is by one of connecting rod and movable sensitive thin layerEnd face connects, and the other end of each top electrode is connected with polysilicon anchor district by elastic component; Connecting rod and elastic componentRelatively lay, lay respectively at top electrode both sides; Polysilicon anchor district is fixedly connected on polysilicon supporting layer.
As preferred version, in the 3rd described step, described elastic component is made up of polysilicon, and elastic component isBent.
As preferred version, in the 3rd described step, described movable sensitive thin layer, top electrode, polysiliconAnchor district, elastic component and connecting rod are positioned at same plane.
Beneficial effect: compared with prior art, the embodiment of the present invention has following beneficial effect: the present embodimentHighly sensitive, the preparation technology of pressure sensor mainly adopt surface micromachined technology, and technique is simple, canRow is high. The capacitance pressure transducer, of the present embodiment is by longitudinal the transferring to of change in displacement between upper bottom crownHorizontal area changes. The variable area formula pressure sensor of this structure is non-contacting. The electricity of traditional variable area formulaAppearance formula pressure sensor also claims contact capacitance sensor, in the time that pressure puts on movable sensitive film, by changingBecome the contact area of two-plate, thereby change the output capacitance of sensor. Due to the two-plate phase mutual connection of sensorTouch, may occur that, in the time that pressure removes, two-plate can not separate, be sticked together, thereby bring reliability to askTopic. The capacitance pressure transducer, of the present embodiment, in the time that pressure puts on movable sensitive film, film is curved downwardsSong, drives the top electrode being attached thereto close to thin film center, amasss thereby change with the right opposite of bottom electrode, because ofThis changes the output capacitance of sensor. The right opposite of the two-plate changing due to the present embodiment is long-pending, there will not be stickyConnect problem, reliability is higher.
Brief description of the drawings
Fig. 1 is the structure cutaway view of pressure sensor in the embodiment of the present invention;
Fig. 2 is the structure cutaway view of preparation method's first step in the embodiment of the present invention;
Fig. 3 is the structure cutaway view of preparation method's second step in the embodiment of the present invention;
Fig. 4 is the structure cutaway view of preparation method's the 3rd step in the embodiment of the present invention;
Fig. 5 is the structure cutaway view of preparation method's the 4th step in the embodiment of the present invention;
Fig. 6 is the structure cutaway view of preparation method's the 5th step in the embodiment of the present invention;
Fig. 7 is the top view of polysilicon layer and sensor lower electrode relative position in the embodiment of the present invention.
In figure, have: silicon substrate 1, silicon dioxide layer 2, polysilicon layer 3, bottom electrode 101, the first cavity 102,Polysilicon supporting layer 201, the second cavity 202, wet etching stop-layer 203, movable sensitive thin layer 301,Top electrode 302, polysilicon anchor district 303, elastic component 304, connecting rod 305.
Detailed description of the invention
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in detail.
As shown in Figure 1, a kind of capacitance pressure transducer, with high linearity of the embodiment of the present invention, comprisesLayer-of-substrate silicon 1, silicon dioxide layer 2 and the polysilicon layer 3 laid successively from bottom to top. In layer-of-substrate silicon 1, establishThere are the first cavity 102 and four bottom electrode 101, the first cavity 102 through-silicon substrate layers 1, bottom electrode 101Be fixedly connected on the top of layer-of-substrate silicon 1, four bottom electrodes 101 are laid in the surrounding of the first cavity 102. TwoIn silicon oxide layer 2, be provided with polysilicon supporting layer 201 and the second cavity 202, polysilicon supporting layer 201 is fixing to be connectedBe connected on the end face of layer-of-substrate silicon 1. The second cavity 202 is positioned at the inner side of polysilicon supporting layer 201, and the second skyChamber 202 is communicated with the first cavity 102. Polysilicon layer 3 comprises movable sensitive thin layer 301, four top electrodes302, polysilicon anchor district 303, movable sensitive thin layer 301 and top electrode 302 are all positioned at the second cavity 202Directly over, and one end of each top electrode 302 is by one end of connecting rod 305 and movable sensitive thin layer 301Face connects, and the other end of each top electrode 302 is connected with polysilicon anchor district 303 by elastic component 304. ConnectBar 305 laying relative to elastic component 304. Connecting rod 305 and elastic component 304 lay respectively at top electrode 302Both sides. Polysilicon anchor district 303 is fixedly connected on polysilicon supporting layer 201. Top electrode 302 and bottom electrode101 is corresponding one by one, and bottom electrode 101 is positioned at the below of connecting rod 305, and top electrode 302 is near movable sensitiveThe end face of thin layer 301 and bottom electrode 101 away from the end face of the first cavity 102 in the same face.
When the capacitance pressure transducer, of said structure is worked, in the time that pressure puts on movable sensitive film 301,Movable sensitive film 301 is bent downwardly, and drives the top electrode 302 being attached thereto to movable sensitive film 301Center is close. The position of bottom electrode 101 is constant. Because top electrode 302 is to movable sensitive film 301Center is close, thereby the right opposite changing between pressure sensor top electrode 302 and bottom electrode 101 amasss, and thenChange the output capacitance of pressure sensor. By detecting the variation of output capacitance, can realize pressure measxurement. ShouldThe capacitance pressure transducer, of embodiment, changes longitudinal transferring to of change in displacement horizontal area. At athwartship planeIn long-pending change procedure, between top electrode 302 and bottom electrode 101, be non-contacting. So just guarantee extraneous pressureWhen power is removed, top electrode 302 and bottom electrode 101 can not bond together. The pressure sensor of the present embodiment willLongitudinal change in displacement is converted into horizontal area change, and interval between top electrode 302 and bottom electrode 101Two cavitys 202, have guaranteed between top electrode 302 and bottom electrode 101 it is non-contacting state all the time.
Meanwhile, the capacitance pressure transducer, of the present embodiment, has high linearity. The condenser type of the present embodiment is pressedIts principle of power sensor is based on variable area. According to capacity plate antenna formula:Known, electric capacity and faceLong-pending linear. Wherein, C represents the electric capacity of pressure sensor, ε0Represent permittivity of vacuum, εrTableShow the relative dielectric constant (dielectric layer of the present embodiment is air) of dielectric layer, A represent top electrode 302 and underOverlapping area between electrode 101, d represents the spacing of top electrode 302 and bottom electrode 101.
As a kind of preferred version, described elastic component 304 is made up of polysilicon, and elastic component 304 is bendingShape. Elastic component 304 is made up of polysilicon, is convenient in the time preparing polysilicon layer 3, and it is thin that entirety is prepared movable sensitiveRete 301, four top electrodes 302, polysilicon anchor district 303 and connecting rods 304. Elastic component 304 is bendingShape, makes it have certain elasticity, and structure is also simple and reliable.
As a kind of preferred version, described movable sensitive thin layer 301, top electrode 302 and polysilicon anchor district303 are positioned at same plane. Each parts in polysilicon layer 3 are placed in same plane, are convenient to manufacture processing.
The preparation method of the capacitance pressure transducer, of said structure, comprises the following steps:
The first step: as shown in Figure 2, carry out phosphonium ion injection in layer-of-substrate silicon 1, form the lower electricity of sensorThe utmost point 101.
Second step: as shown in Figure 3, the layer of silicon dioxide of growing in layer-of-substrate silicon 1 layer 2, then adopts lightCarving technology forms the stop-layer 203 of polysilicon supporting layer 201 and wet etching on silicon dioxide layer 2.
The 3rd step: as shown in Figure 4, one deck polysilicon layer 3 of growing on silicon dioxide layer 2, then adopts lightCarving technology, forms the top electrode 302, many of movable sensitive thin layers 301, sensor in polysilicon layer 3 photoetchingCrystal silicon anchor district 303, elastic component 304 and connecting rod 305. Top electrode 302 is four, movable sensitive thin layer301 and top electrode 302 be all positioned at directly over the second cavity 202, and one end of each top electrode 302 by connectExtension bar 305 is connected with an end face of movable sensitive thin layer 301, and the other end of each top electrode 302 passes through bulletProperty part 304 is connected with polysilicon anchor district 303, and connecting rod 305 laying relative to elastic component 304, lays respectively atTop electrode 302 both sides; Polysilicon anchor district 303 is fixedly connected on polysilicon supporting layer 201.
The 4th step: as shown in Figure 5, carry out anisotropic wet etch at layer-of-substrate silicon 1 back side, form firstCavity 102.
The 5th step: as shown in Figure 6, utilize anisotropic wet corrosion, etch stop layer 203, obtains secondCavity 202, thus pressure sensor made.
In the capacitance pressure transducer, of above-described embodiment, the bottom electrode 101 in silicon substrate 1 passes through ImplantationForm. The first cavity 102 in silicon substrate 1 forms by wet etching. Movable sensitive thin layer 301, onElectrode 302, elastic component 304 and polysilicon anchor district 303 are positioned at same plane, and material is all polysilicon.In technique, these parts are by growth one deck polycrystalline silicon material, and then photoetching forms movable sensitive thin layer301, top electrode 302, elastic component 304 and 303 4, polysilicon anchor district parts. The existence of elastic component 303Make top electrode 302 move and be more prone to movable sensitive thin layer 301 centers.
More than show and described general principle of the present invention, principal character and advantage. Those skilled in the artShould understand, the present invention is not subject to the restriction of above-mentioned specific embodiment, retouching in above-mentioned specific embodiment and descriptionState just in order to further illustrate principle of the present invention, without departing from the spirit and scope of the present invention, thisInvention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The scope of protection of present invention is defined by claims and equivalent thereof.
Claims (7)
1. a capacitance pressure transducer, with high linearity, is characterized in that, this pressure sensor comprises layer-of-substrate silicon (1), silicon dioxide layer (2) and the polysilicon layer (3) laid successively from bottom to top; Wherein,
In layer-of-substrate silicon (1), be provided with the first cavity (102) and four bottom electrodes (101), the first cavity (102) through-silicon substrate layer (1), bottom electrode (101) is fixedly connected on the top of layer-of-substrate silicon (1), and four bottom electrodes (101) are laid in the surrounding of the first cavity (102);
In silicon dioxide layer (2), be provided with polysilicon supporting layer (201) and the second cavity (202), polysilicon supporting layer (201) is fixedly connected on the end face of layer-of-substrate silicon (1); The second cavity (202) is positioned at the inner side of polysilicon supporting layer (201), and the second cavity (202) is communicated with the first cavity (102);
Polysilicon layer (3) comprises movable sensitive thin layer (301), four top electrodes (302), polysilicon anchor district (303), movable sensitive thin layer (301) and top electrode (302) are all positioned at directly over the second cavity (202), and one end of each top electrode (302) is connected with an end face of movable sensitive thin layer (301) by connecting rod (305), the other end of each top electrode (302) is connected with polysilicon anchor district (303) by elastic component (304), connecting rod (305) laying relative to elastic component (304), lay respectively at top electrode (302) both sides, polysilicon anchor district (303) is fixedly connected on polysilicon supporting layer (201),
Top electrode (302) and bottom electrode (101) are corresponding one by one, bottom electrode (101) is positioned at the below of connecting rod (305), and top electrode (302) near the end face of movable sensitive thin layer (301) and bottom electrode (101) away from the end face of the first cavity (102) in the same face.
2. according to the capacitance pressure transducer, with high linearity claimed in claim 1, it is characterized in that, described elastic component (304) is made up of polysilicon, and elastic component (304) is bent.
3. according to the capacitance pressure transducer, with high linearity claimed in claim 1, it is characterized in that, described movable sensitive thin layer (301), top electrode (302), polysilicon anchor district (303), elastic component (304) and connecting rod (305) are positioned at same plane.
4. a preparation method with the capacitance pressure transducer, of high linearity, is characterized in that, this preparation method comprises the following steps:
The first step: carry out phosphonium ion injection in layer-of-substrate silicon (1), form the bottom electrode (101) of sensor;
Second step: at layer-of-substrate silicon (1) upper growth layer of silicon dioxide layer (2), then adopt photoetching process at the upper stop-layer (203) that forms polysilicon supporting layer (201) and wet etching of silicon dioxide layer (2);
The 3rd step: at silicon dioxide layer (2) upper growth one deck polysilicon layer (3), then adopt photoetching process, form top electrode (302), polysilicon anchor district (303), elastic component (304) and the connecting rod (305) of movable sensitive thin layer (301), sensor in polysilicon layer (3) photoetching;
The 4th step: carry out anisotropic wet etch at layer-of-substrate silicon (1) back side, form the first cavity (102);
The 5th step: utilize anisotropic wet corrosion, etch stop layer (203), obtains the second cavity (202), thereby make pressure sensor.
5. according to the preparation method of the capacitance pressure transducer, with high linearity claimed in claim 4, it is characterized in that, in the 3rd described step, top electrode (302) is four, movable sensitive thin layer (301) and top electrode (302) are all positioned at directly over the second cavity (202), and one end of each top electrode (302) is connected with an end face of movable sensitive thin layer (301) by connecting rod (305), the other end of each top electrode (302) is connected with polysilicon anchor district (303) by elastic component (304); Connecting rod (305) laying relative to elastic component (304), lays respectively at top electrode (302) both sides; Polysilicon anchor district (303) is fixedly connected on polysilicon supporting layer (201).
6. according to the preparation method of the capacitance pressure transducer, with high linearity claimed in claim 4, it is characterized in that, in the 3rd described step, described elastic component (304) is made up of polysilicon, and elastic component (304) is bent.
7. according to the preparation method of the capacitance pressure transducer, with high linearity described in claim 4,5 or 6, it is characterized in that, in the 3rd described step, movable sensitive thin layer (301), top electrode (302), polysilicon anchor district (303), elastic component (304) and connecting rod (305) are positioned at same plane.
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Citations (6)
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|---|---|---|---|---|
| CN1273633A (en) * | 1998-06-09 | 2000-11-15 | 株式会社山武 | Static capaitance type sensor |
| CN1484008A (en) * | 2003-06-10 | 2004-03-24 | 东南大学 | Multe-layer film capacitance type pressure sensor |
| US20040163939A1 (en) * | 2003-02-20 | 2004-08-26 | Iee International Electronics & Engineering S.A. | Foil-type switching element with improved spacer design |
| CN102252795A (en) * | 2011-05-05 | 2011-11-23 | 中国科学院国家天文台 | Capacitive cable tension sensor |
| CN102509613A (en) * | 2011-09-27 | 2012-06-20 | 汉王科技股份有限公司 | Variable capacitor and position indicator using same |
| CN104848971A (en) * | 2014-02-14 | 2015-08-19 | 欧姆龙株式会社 | CAPACITIVE PRESSURE SENSOR, pressure detector and INPUT DEVICE |
-
2015
- 2015-09-11 CN CN201510580359.5A patent/CN105606269B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273633A (en) * | 1998-06-09 | 2000-11-15 | 株式会社山武 | Static capaitance type sensor |
| US20040163939A1 (en) * | 2003-02-20 | 2004-08-26 | Iee International Electronics & Engineering S.A. | Foil-type switching element with improved spacer design |
| CN1484008A (en) * | 2003-06-10 | 2004-03-24 | 东南大学 | Multe-layer film capacitance type pressure sensor |
| CN102252795A (en) * | 2011-05-05 | 2011-11-23 | 中国科学院国家天文台 | Capacitive cable tension sensor |
| CN102509613A (en) * | 2011-09-27 | 2012-06-20 | 汉王科技股份有限公司 | Variable capacitor and position indicator using same |
| CN104848971A (en) * | 2014-02-14 | 2015-08-19 | 欧姆龙株式会社 | CAPACITIVE PRESSURE SENSOR, pressure detector and INPUT DEVICE |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Southeast University Address before: 211189 No. 2 Southeast University Road, Jiangning District, Nanjing, Jiangsu Patentee before: Southeast University |