CN105603369A - Method for coating purple PVD film in oxygen-free manner - Google Patents

Method for coating purple PVD film in oxygen-free manner Download PDF

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Publication number
CN105603369A
CN105603369A CN201610041144.0A CN201610041144A CN105603369A CN 105603369 A CN105603369 A CN 105603369A CN 201610041144 A CN201610041144 A CN 201610041144A CN 105603369 A CN105603369 A CN 105603369A
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Prior art keywords
purple
film
coated
anaerobic
arc target
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CN201610041144.0A
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Inventor
黎剑文
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DONGGUAN SHATOU CHAORI HARDWARE ELECTRONIC PRODUCTS Co Ltd
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DONGGUAN SHATOU CHAORI HARDWARE ELECTRONIC PRODUCTS Co Ltd
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Priority to CN201610041144.0A priority Critical patent/CN105603369A/en
Publication of CN105603369A publication Critical patent/CN105603369A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641Nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a method for coating a purple PVD film in an oxygen-free manner. The method has the advantages that the multi-arc ion film coating technology is used, TiAl alloy is used as the arc target to allow titanium ions and aluminum ions to evenly fill a vacuum furnace and combine with nitrogen to generate a stable purple film, the carbon element in C2H2 or C is not used for color regulation in the process, and accordingly the coated film is even and stable in color; in addition, the film coating process is free of O2, and the oxidation problem of film coating equipment can be avoided.

Description

A kind of anaerobic is coated with the method for purple PVD film
Technical field
The present invention relates to one and be coated with PVD film method, relate in particular to a kind of anaerobic and be coated with purple PVD film method.
Background technology
PVD (PhysicalVaporDeposition), refers to utilize physical process to realize substance transfer, and atom or molecule are transferred to the process on substrate surface by source. PVD can choose different evaporation of metal when operation, is ionized into electronic state, utilizes electrical bias that ion is led on workpiece, is deposited as film. At ion deposition before workpiece, also can with the combination of reacting of other ions, generate composite film, change in hardness, brightness, coefficient of friction, color etc., meet in function or apparent requirement.
PVD plated film can be prepared film in various material, and color category is various, as gold, silver color, coffee color, blueness, purple etc. Because terminal client is more and more high-grade to product surface rete effect demand, PVD coating machine, as high-grade surface-treated equipment, is applied more and more extensive. Along with the development in market, the increasing final rete of customer demand product surface is PVD decoration coating, and color variation, wherein also more and more to the demand of purple. At present, known purple PVD coating technique is mainly with O2Be combined with Ti and generate light blue, then with C2H2Or carbon association reaction in the material such as C, thereby the navy blue of making, purple effect.
The generation of prior art purple PVD film need be used carbon, and the parameter that the method is taken into account is various, and carbon ion skewness can bring technical problem, makes irregular colour even, and production yields is low; On the other hand, input O2In vacuum container, can make the steel oxidation in furnace chamber, destroy furnace wall and structure in the stove, cause maintenance difficult, can increase operating cost.
Summary of the invention
The object of the invention is, for evenly purple film, the oxidizable problem of equipment of existing PVD coating technique, provides a kind of anaerobic to be coated with the method for purple PVD film.
Anaerobic is coated with a method for purple PVD film, comprises the steps:
1) pretreatment: surface of the work is cleaned, sloughed oxide-film, put into vacuum drying oven, vacuumize, heat up;
2) formation base rete: start Cr arc target, at surface of the work deposition Cr basis film;
3) generate transition rete: continue to open Cr arc target, inject N2Make surface of the work deposition CrN film;
4) generate purple rete: close Cr arc target, start Ti/Al atomic ratio and be not less than the TiAl arc target of 96: 4, and inject N simultaneously2, load bias voltage, until surface of the work deposition purple TiAlN film.
In an embodiment, described method also comprises after thin film deposition completes closes TiAl arc target and all power supplys therein, progressively boosts and be cooled to after 65 DEG C~75 DEG C in vacuum drying oven, takes out workpiece.
Therein in an embodiment, in described step 1), pretreatment also comprises and passes into Ar after vacuumizing by workpiece Ion Cleaning 20 minutes.
In an embodiment, described film plating process all adopts multi-arc ion coating embrane method therein.
In an embodiment, described in step 1), vacuumizing pressure is 4.0 × 10 therein-3~6.0×10-3Pa。
Therein in an embodiment, temperature to 200~250 DEG C of heating up described in step 1).
Therein in an embodiment, step 2) described in Cr basis film sedimentation time be 3~5 minutes.
Therein in an embodiment, N described in step 4)2Flow is 600~700sccm, passes into N2Time is 5~8 minutes.
In an embodiment, bias voltage described in step 4) is-150V~-250V therein.
In an embodiment, described in step 4), pass into N therein2, making stove internal gas pressure is 2.5Pa, passes into N2Time is 4~5 hours.
The above a kind of anaerobic is coated with the method for purple PVD film, adopt multi-arc ion coating membrane technology, and adopt TiAl alloy to make arc target, titanium ion and aluminium ion are filled uniformly in vacuum drying oven, generate stable purple film with nitrogen ions binding, in process, do not use C2H2Or the toning of carbon in C, therefore plated film color is uniform and stable; On the other hand, in coating process, there is no O2, the problem that can avoid filming equipment to be oxidized.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage more clear, below in conjunction with embodiment, the present invention is further elaborated. Should be appreciated that specific embodiment described herein, only in order to understand better technical scheme of the present invention, is not intended to limit the present invention.
The anaerobic of one embodiment is coated with the method for purple PVD film, comprises the steps: 1) pretreatment: surface of the work is cleaned, sloughed oxide-film, put into vacuum drying oven, vacuumize, heat up; 2) formation base rete: start Cr arc target, at surface of the work deposition Cr basis film; 3) generate transition rete: continue to open Cr arc target, inject N2Make surface of the work deposition CrN film; 4) generate purple rete: close Cr arc target, start Ti/Al atomic ratio and be not less than the TiAl arc target of 96: 4, and inject N simultaneously2, load bias voltage, until surface of the work deposition purple TiAlN film.
Deposition one deck Cr Ranvier's membrane, can activate chromium surface, carries high surface energy, and can form the high density of defects in surface of the work district, as room, interstitial atom, dislocation etc., can improve the adhesion of film and surface of the work. On Cr basal layer, deposit one deck CrN film, the Cr-N molecular link that in deposition process, Cr atom becomes with N atom can increase the adhesion between film, makes the film can be more uniform and stable. CrN layer is bottom reflection, makes the rich color of purple, has metal sense.
The atomic ratio of titanium aluminium target is the key of purple film, and the atomic wts of titanium aluminium is than the color that affects film forming. Titanium al atomic ratio is not less than 96: 4, and titanium aluminium atom fills uniformly in vacuum drying oven, forms stable purple film on workpiece.
In an embodiment, described method also comprises after thin film deposition completes closes TiAl arc target and all power supplys therein, progressively boosts and be cooled to after 65 DEG C~75 DEG C in vacuum drying oven, takes out workpiece. Temperature exceeds very much after vacuum drying oven easily and airborne oxygen generation oxidation reaction, affects the quality of PVD film.
Therein in an embodiment, in described step 1), pretreatment also comprises and passes into Ar after vacuumizing by workpiece Ion Cleaning 20 minutes. Cleannes are high on the one hand for Ion Cleaning, on the other hand, excited the activation energy of surface of the work in Ion Cleaning process, can increase the adhesion of plated film.
In an embodiment, described film plating process all adopts multi-arc ion coating embrane method therein. It is high that multi-arc ion coating has target utilization, and metal ion ionization level is high, the strong advantage of adhesion between film and matrix.
In an embodiment, described in step 1), vacuumizing pressure is 4.0 × 10 therein-3~6.0×10-3Pa。
Therein in an embodiment, temperature to 200~250 DEG C of heating up described in step 1).
Therein in an embodiment, step 2) described in Cr basis film sedimentation time be 3~5 minutes.
Therein in an embodiment, N described in step 4)2Flow is 600~700sccm, passes into N2Time is 5~8 minutes. Pass into N2With the Cr ionic reaction of chromium target ion, generate uniform CrN film, N2Flow and time change along with the change of workpiece material and plated film area.
In an embodiment, bias voltage described in step 4) is-150V~-250V therein. Control workpiece temperature in suitable scope by bias voltage, thereby the film crystal grain of preparation is tiny, dense structure, good microstructure not only makes film color uniform and stable, and has increased the abrasion resistance properties of film.
In an embodiment, described in step 4), pass into N therein2, making stove internal gas pressure is 2.5Pa, passes into N2Time is 4~5 hours. N2Gas flow affects the shade of TiAlN film, can adjust as required N2Flow.
The inventive method can be coated with purple PVD film on various material surfaces such as copper alloy, kirsite, stainless steels.
Embodiment 1
1) surface of the work is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 4.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 200 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 3 minutes; 4) chromium arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 600sccm, and sedimentation time is 8 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 96: 4, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-150V, sedimentation time is 4 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to 65 DEG C, take out workpiece.
Embodiment 2
1) surface of the work is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and vacuumizes 5.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 250 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 3 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 650sccm, and sedimentation time is 5 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 97: 3, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-200V, sedimentation time is 4.5 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 70 DEG C, take out workpiece.
Embodiment 3
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 5.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 250 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 5 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 700sccm, and sedimentation time is 6 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 97: 3, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 5 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 75 DEG C, take out workpiece.
Embodiment 4
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 4.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 200 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 5 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 700sccm, and sedimentation time is 7 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 97.5: 2.5, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 5 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 65 DEG C, take out workpiece.
Embodiment 5
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 5.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 225 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 4 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 600sccm, and sedimentation time is 8 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 98: 2, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 4 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 70 DEG C, take out workpiece.
Embodiment 6
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 6.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 200 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 5 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 700sccm, and sedimentation time is 5 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 98: 2, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 4 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 75 DEG C, take out workpiece.
Embodiment 7
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 6.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 200 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 3 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 650sccm, and sedimentation time is 6 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 98.5: 1.5, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 5 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 65 DEG C, take out workpiece.
Embodiment 8
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 4.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 240 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 4 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 630sccm, and sedimentation time is 7 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 99: 1, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 5 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 70 DEG C, take out workpiece.
Embodiment 9
1) workpiece copper alloy surface is cleaned, sloughed oxide-film, multi-Arc Ion Plating fixture on clamping, together puts into vacuum drying oven, starts vacuum extractor and is evacuated to 6.0 × 10-3Pa, injects Ar and carries out after Ion Cleaning, closing Ar in 20 minutes; 2) by temperature increase to 210 DEG C in stove; 3) start Cr arc target, make surface of the work deposition Cr basis film, sedimentation time is 4 minutes; 4) Cr arc target continues to open, and injects N2Make surface of the work deposition CrN film, wherein N2Flow is 680sccm, and sedimentation time is 6 minutes; 5) close Cr arc target, start TiAl arc target, wherein Ti/Al atomic ratio is 99: 1, and injects N simultaneously2, making stove internal gas pressure is 2.5Pa, loads bias voltage-250V, sedimentation time is 4 hours, until surface of the work deposition purple TiAlN film; 6) close TiAl arc target and all power supplys, in vacuum drying oven, progressively boost and be cooled to after 75 DEG C, take out workpiece.
The above embodiment is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make and improving and distortion, these improvement and distortion also should be considered as not departing from protection scope of the present invention.

Claims (10)

1. anaerobic is coated with a method for purple PVD film, it is characterized in that: comprise the steps:
1) pretreatment: surface of the work is cleaned, sloughed oxide-film, put into vacuum drying oven, vacuumize, heat up;
2) formation base rete: start Cr arc target, at surface of the work deposition Cr basis film;
3) generate transition rete: continue to open Cr arc target, inject N2Make surface of the work deposition CrN film;
4) generate purple rete: close Cr arc target, start Ti/Al atomic ratio and be not less than the TiAl arc target of 96: 4, and inject N simultaneously2, load bias voltage, until surface of the work deposition purple TiAlN film.
2. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: described method also comprises after thin film deposition completes closes TiAl arc target and all power supplys, progressively boosts and be cooled to after 65 DEG C~75 DEG C in vacuum drying oven, takes out workpiece.
3. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: in described step 1), pretreatment also comprises and passes into Ar after vacuumizing by workpiece Ion Cleaning 20 minutes.
4. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: described film plating process all adopts multi-arc ion coating embrane method.
5. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: described in step 1), vacuumizing pressure is 4.0 × 10-3~6.0×10-3Pa。
6. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: temperature to 200~250 DEG C of heating up described in step 1).
7. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: step 2) described in Cr basis film sedimentation time be 3~5 minutes.
8. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: N described in step 4)2Flow is 600~700sccm, passes into N2Time is 5~8 minutes.
9. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: bias voltage described in step 4) is-150V~-250V.
10. a kind of anaerobic is coated with the method for purple PVD film according to claim 1, it is characterized in that: described in step 4), pass into N2, making stove internal gas pressure is 2.5Pa, passes into N2Time is 4~5 hours.
CN201610041144.0A 2016-01-22 2016-01-22 Method for coating purple PVD film in oxygen-free manner Withdrawn CN105603369A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111778477A (en) * 2020-06-17 2020-10-16 深圳市裕展精密科技有限公司 Coated part, electronic equipment and manufacturing method of coated part

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111778477A (en) * 2020-06-17 2020-10-16 深圳市裕展精密科技有限公司 Coated part, electronic equipment and manufacturing method of coated part

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Application publication date: 20160525