CN105590982A - High-efficiency solar cell piece and thermal treatment technology - Google Patents
High-efficiency solar cell piece and thermal treatment technology Download PDFInfo
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- CN105590982A CN105590982A CN201610093516.4A CN201610093516A CN105590982A CN 105590982 A CN105590982 A CN 105590982A CN 201610093516 A CN201610093516 A CN 201610093516A CN 105590982 A CN105590982 A CN 105590982A
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- 238000007669 thermal treatment Methods 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims description 56
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 35
- 239000001257 hydrogen Substances 0.000 claims description 35
- 229910052739 hydrogen Inorganic materials 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000000523 sample Substances 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000014759 maintenance of location Effects 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 230000002146 bilateral effect Effects 0.000 claims description 10
- 239000006101 laboratory sample Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000003698 laser cutting Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 238000013021 overheating Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 241001672694 Citrus reticulata Species 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007531 graphite casting Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-efficiency solar cell piece comprising a silicon nitride anti-reflection film, an N-type heavily-doped layer, a P-type silicon substrate layer, and a back passivation layer. The N-type heavily-doped layer and the P-type silicon substrate layer are used to form a PN junction, and the silicon nitride anti-reflection film is disposed on the upper surface of the N-type heavily-doped layer. A monox film layer is disposed between the back passivation layer and the P-type silicon substrate layer, and two sides of the back passivation layer are symmetrically provided with back electrodes in an embedded manner. The high-efficiency solar cell piece is advantageous in that the N-type heavily-doped layer having the thickness of 0.5(mu)m is produced by adopting the POC13 liquid source diffusion technology, and is disposed on the surface of the P-type silicon substrate layer, and the good ohmic contact between the positive electrode and the N-type heavily-doped layer can be formed, and then the photo-generated current can be acquired; the silicon nitride anti-reflection film disposed on the upmost layer has the passivation function and the anti-reflection function; the back passivation layer is contacted with the P-type silicon wafer, and during the sintering process, the good A1 back field can be formed, the back surface recombination surface can be reduced, and the open circuit voltage can be increased.
Description
Technical field
The present invention relates to technical field of solar batteries, relate in particular to a kind of solar battery sheet and Technology for Heating Processing thereof efficiently.
Background technology
Silicon solar cell can be divided into monocrystalline silicon, polysilicon and amorphous silicon solar cell. Monocrystalline silicon battery is the solar cell of producing taking highly purified silicon single crystal rod as raw material, it has the advantages such as high conversion efficiency, high stability and high minority carrier life time, but because the production technology of high-purity silicon rod is comparatively complicated, and then just increase the production cost of monocrystalline silicon battery. And the conversion efficiency of amorphous silicon film battery is lower, its laboratory peak efficiency only has 14%, is no more than 10% in actual production, and its efficiency decays very soon in time. Compare monocrystalline silicon battery, although polycrystal silicon cell conversion efficiency is slightly lower, but it is requiring not have monocrystalline silicon high aspect raw material and substrate, this makes its production cost well below single crystal silicon solar cell, simultaneously, for now, the photoelectric transformation efficiency of polysilicon is high more than amorphous silicon thin-film solar cell. Due to the above advantage of polycrystal silicon cell, its production and research have attracted the concern of numerous producers and colleges and universities. For further reducing silicon solar cell production cost, people have invented ingot casting and have produced polysilicon technology. In actual production technique, silicon single crystal rod is to draw and form in single crystal growing furnace, and polysilicon is to build by ingot casting technology to form, in quartzy mandarin orange misfortune, add polycrystalline silicon raw material and appropriate boron-doped silicon, then heating and melting, after fusing, insulation fully mixes it a period of time, finally pours in graphite casting die, make its gradually cooled and solidified become silicon ingot. Form the square sheet that cuts into thickness after silicon ingot and be approximately 0.2mm. Polysilicon, because self crystal structure, working condition and the relative monocrystalline silicon of technology of preparing are so desirable, causes its defect and impurity content more, causes polycrystal silicon cell efficiency lower.
In the production of polysilicon solar cell, introduce the technology of preparing of monocrystaline silicon solar cell. As, silicon chip upper surface matte technology, selective emitting electrode structure, back of the body surface field (BSF) technology and fine and closely wovenization of metal grid lines technology etc. On the basis of introducing in these technology, polycrystalline silicon solar cell conversion efficiency sharply rises. And use the silicon nitride film of remote PECVD deposition to there is good surface passivation effect and anti-reflection effect.
At present; in order to obtain more high efficiency polycrystalline silicon solar cell; oneself is through having a lot of people to preparing the Study of Heat Treatment such as front electrode, aluminium back surface field, hydrogen passivation, heat modification; as fire after metallic film; the not direct cool to room temperature of the temperature of sample; pass into immediately suitable gas and heat-treat processing, can improve battery performance; The heat modification of silicon chip, carries out low temperature or high annealing to silicon chip, changes the state of the inner impurity of silicon chip and defect; Rapid thermal treatment realizes hydrogen passivation etc. in solar cell preparation process.
Summary of the invention
The object of the invention is the shortcoming existing in prior art in order to solve, and the efficient solar battery sheet of one and the Technology for Heating Processing thereof that propose.
To achieve these goals, the present invention has adopted following technical scheme:
A kind of solar battery sheet efficiently, comprise silicon nitride anti-reflection film, N-type heavily doped layer, P type layer-of-substrate silicon and back of the body passivation layer, described N-type heavily doped layer is connected with P type layer-of-substrate silicon, and described N-type heavily doped layer and P type layer-of-substrate silicon form PN junction, described silicon nitride anti-reflection film is arranged on the upper surface of N-type heavily doped layer, the bilateral symmetry of described silicon nitride anti-reflection film is provided with two groups of positive electrodes, between described back of the body passivation layer and P type layer-of-substrate silicon, be provided with membranous layer of silicon oxide, the bilateral symmetry of described back of the body passivation layer is inlaid with back electrode.
Preferably, the thickness of described N-type heavily doped layer is 0.35-0.55 micron.
Preferably, the thickness of described membranous layer of silicon oxide is 1-10 nanometer.
Preferably, the thickness of described silicon nitride anti-reflection film is 10-60 nanometer.
The preparation method that the invention allows for a kind of efficient solar battery sheet and Technology for Heating Processing thereof, comprises the steps:
S1, laboratory sample are the 156*156mm that uses industrial standard2P type polycrystalline silicon solar cell sheet, be that YAG-50 digital control laser scribing machine is cut large stretch of battery into pieces to there are enough laboratory samples by model, then be numbered processing, this numbering is corresponding in the position of large stretch of battery with small pieces battery, and the former edge of battery is not cut;
S2, the edge W20 abrasive paper for metallograph hand that small pieces battery is cut by laser grind off 0.1-0.15mm thickness, to prevent from cutting the measurement of experimental result after Effect of Short Circuit after rear battery front side and backside melting; Owing to may causing front silver grating line and back metal short circuit in laser cutting cell piece process, therefore need polishing;
S3, by the baby battery sheet preparing, be that XJCM-9 solar simulator is measured efficiency before heat treatment by model, use WT2000 minority carrier lifetime tester to measure battery minority carrier life time, quantum efficiency, diffusion velocity, resistivity and light beam induced current etc.;
S4, the vacuum tube furnace that sample is put into CVD-06 are heat-treated, two one group, samples (as far as possible ensureing that adjacent two small pieces are together), and when heat treatment, holding temperature is respectively 220-4000C, temperature retention time is respectively 5-15min; The rate of heat addition is 50C/min, cooldown rate are 30C/min；
S5, after Overheating Treatment, be cooled to room temperature until sample, take out sample, measure efficiency and the minority carrier life time of sample after heat treatment.
Preferably, described vacuum tube furnace inert gas used is argon gas, nitrogen hydrogen mixeding gas, heat treatment in argon gas, nitrogen hydrogen mixeding gas, and temperature retention time 15min, heat treatment temperature is 2200C-4000Between C, can improve battery efficiency and minority carrier life time, especially temperature is 3000C-4000When C, raising by a relatively large margin the efficiency of battery, 3500Definitely raising amount of C reaches 1.37%, and this is to spread in silicon substrate because the hydrogen in atmosphere in this temperature range impels the hydrogen in silicon nitride, the defect and impurity in battery surface and body is carried out to passivation, 4000The above heat treatment of C is unfavorable to battery, and the hydrogen in silicon nitride starts to external diffusion, affects the compactness of silicon nitride film, and then affect its anti-reflection effect, last battery efficiency sharply declines, and external diffusion phenomenon does not occur for hydrogen in this procedure body, so the minority carrier life time of battery does not reduce; Heat treatment in air, temperature is 2200C-3000C scope battery efficiency has raising in various degree, and the not corresponding raising of minority carrier life time, 3500The above heat treatment of C, battery efficiency sharply declines, but minority carrier life time increases substantially, and we infer is to have occurred battery burn-off phenomenon.
Preferably, the nitrogen of described nitrogen hydrogen mixeding gas and the volume ratio of hydrogen are 1:9.
Preferably, in S4, when described heat treatment, holding temperature is respectively 2200C、2500C、2800C、3000C、3500C and 4000C, temperature retention time is respectively 5min, 10min and 15min.
The efficient solar battery sheet of one provided by the invention and Technology for Heating Processing thereof, compared with prior art, the present invention is a kind of solar battery sheet efficiently, it,, on P type layer-of-substrate silicon surface, utilizes POCl3Liquid source diffusion technique makes the N-type heavily doped layer that thickness is about 0.5um, and P type layer-of-substrate silicon contacts with N-type heavily doped layer, forms PN junction, produce photovoltaic effect, meanwhile, positive electrode can form good Ohmic contact with N-type heavily doped layer, for collecting photogenerated current, the silicon nitride anti-reflection film that is positioned at the superiors plays passivation and antireflecting effect, back of the body passivation layer contacts with P type silicon chip, in the process of sintering, forms good Al back surface field, reduce back of the body surface recombination current, increase open-circuit voltage; Meanwhile, technique provided by the invention heat treatment in argon gas, nitrogen hydrogen mixeding gas, temperature retention time 15min, heat treatment temperature is 2200C-4000Between C, can improve battery efficiency and minority carrier life time, especially temperature is 3000C-4000When C, raising by a relatively large margin the efficiency of battery, 3500Definitely raising amount of C reaches 1.37%, and this is to spread in silicon substrate because the hydrogen in atmosphere in this temperature range impels the hydrogen in silicon nitride, the defect and impurity in battery surface and body is carried out to passivation, 4000The above heat treatment of C is unfavorable to battery, and the hydrogen in silicon nitride starts to external diffusion, affects the compactness of silicon nitride film, and then affect its anti-reflection effect, last battery efficiency sharply declines, and external diffusion phenomenon does not occur for hydrogen in this procedure body, so the minority carrier life time of battery does not reduce; Heat treatment in air, temperature is 2200C-3000C scope battery efficiency has raising in various degree, and the not corresponding raising of minority carrier life time, 3500The above heat treatment of C, battery efficiency sharply declines, but minority carrier life time increases substantially, and we infer is to have occurred battery burn-off phenomenon.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
In figure: 1 silicon nitride anti-reflection film, 2 positive electrodes, 3N type heavily doped layer, 4P type layer-of-substrate silicon, 5 membranous layer of silicon oxide, 6 back of the body passivation layers, 7 back electrodes.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, the present invention is further elaborated. Specific embodiment described herein only, in order to explain the present invention, is not intended to limit the present invention.
Embodiment 1
A kind of solar battery sheet efficiently, comprise silicon nitride anti-reflection film 1, N-type heavily doped layer 3, P type layer-of-substrate silicon 4 and back of the body passivation layer 6, the thickness of described silicon nitride anti-reflection film 1 is 20 nanometers, the thickness of described N-type heavily doped layer 3 is 0.3 micron, described N-type heavily doped layer 3 is connected with P type layer-of-substrate silicon 4, and described N-type heavily doped layer 3 and P type layer-of-substrate silicon 4 form PN junction, described silicon nitride anti-reflection film 1 is arranged on the upper surface of N-type heavily doped layer 3, the bilateral symmetry of described silicon nitride anti-reflection film 1 is provided with two groups of positive electrodes 2, between described back of the body passivation layer 6 and P type layer-of-substrate silicon 4, be provided with membranous layer of silicon oxide 5, the thickness of described membranous layer of silicon oxide 5 is 6 nanometers, the bilateral symmetry of described back of the body passivation layer 6 is inlaid with back electrode 7.
The preparation method that the invention allows for a kind of efficient solar battery sheet and Technology for Heating Processing thereof, comprises the steps:
S1, laboratory sample are the 156*156mm that uses industrial standard2P type polycrystalline silicon solar cell sheet, be that YAG-50 digital control laser scribing machine is cut large stretch of battery into pieces to there are enough laboratory samples by model, then be numbered processing, this numbering is corresponding in the position of large stretch of battery with small pieces battery, and the former edge of battery is not cut;
S2, the edge W20 abrasive paper for metallograph hand that small pieces battery is cut by laser grind off 0.1-0.15mm thickness, to prevent from cutting the measurement of experimental result after Effect of Short Circuit after rear battery front side and backside melting; Owing to may causing front silver grating line and back metal short circuit in laser cutting cell piece process, therefore need polishing;
S3, by the baby battery sheet preparing, be that XJCM-9 solar simulator is measured efficiency before heat treatment by model, use WT2000 minority carrier lifetime tester to measure battery minority carrier life time, quantum efficiency, diffusion velocity, resistivity and light beam induced current etc.;
S4, the vacuum tube furnace that sample is put into CVD-06 are heat-treated, two one group, samples (as far as possible ensureing that adjacent two small pieces are together), and when heat treatment, holding temperature is respectively 3000C, temperature retention time is respectively 6min; The rate of heat addition is 50C/min, cooldown rate are 30C/min；
S5, after Overheating Treatment, be cooled to room temperature until sample, take out sample, measure efficiency and the minority carrier life time of sample after heat treatment.
Embodiment 2
A kind of solar battery sheet efficiently, comprise silicon nitride anti-reflection film 1, N-type heavily doped layer 3, P type layer-of-substrate silicon 4 and back of the body passivation layer 6, the thickness of described silicon nitride anti-reflection film 1 is 40 nanometers, the thickness of described N-type heavily doped layer 3 is 0.5 micron, described N-type heavily doped layer 3 is connected with P type layer-of-substrate silicon 4, and described N-type heavily doped layer 3 and P type layer-of-substrate silicon 4 form PN junction, described silicon nitride anti-reflection film 1 is arranged on the upper surface of N-type heavily doped layer 3, the bilateral symmetry of described silicon nitride anti-reflection film 1 is provided with two groups of positive electrodes 2, between described back of the body passivation layer 6 and P type layer-of-substrate silicon 4, be provided with membranous layer of silicon oxide 5, the thickness of described membranous layer of silicon oxide 5 is 4 nanometers, the bilateral symmetry of described back of the body passivation layer 6 is inlaid with back electrode 7.
The preparation method that the invention allows for a kind of efficient solar battery sheet and Technology for Heating Processing thereof, comprises the steps:
S1, laboratory sample are the 156*156mm that uses industrial standard2P type polycrystalline silicon solar cell sheet, be that YAG-50 digital control laser scribing machine is cut large stretch of battery into pieces to there are enough laboratory samples by model, then be numbered processing, this numbering is corresponding in the position of large stretch of battery with small pieces battery, and the former edge of battery is not cut;
S2, the edge W20 abrasive paper for metallograph hand that small pieces battery is cut by laser grind off 0.1-0.15mm thickness, to prevent from cutting the measurement of experimental result after Effect of Short Circuit after rear battery front side and backside melting; Owing to may causing front silver grating line and back metal short circuit in laser cutting cell piece process, therefore need polishing;
S3, by the baby battery sheet preparing, be that XJCM-9 solar simulator is measured efficiency before heat treatment by model, use WT2000 minority carrier lifetime tester to measure battery minority carrier life time, quantum efficiency, diffusion velocity, resistivity and light beam induced current etc.;
S4, the vacuum tube furnace that sample is put into CVD-06 are heat-treated, two one group, samples (as far as possible ensureing that adjacent two small pieces are together), and when heat treatment, holding temperature is respectively 3500C, temperature retention time is respectively 10min; The rate of heat addition is 50C/min, cooldown rate are 30C/min; Vacuum tube furnace inert gas used is argon gas, nitrogen hydrogen mixeding gas, heat treatment in argon gas, nitrogen hydrogen mixeding gas, and the volume ratio of nitrogen and hydrogen is 1:9, temperature retention time 15min, heat treatment temperature is 2200C-4000Between C, can improve battery efficiency and minority carrier life time, especially temperature is 3000C-4000When C, raising by a relatively large margin the efficiency of battery, 3500Definitely raising amount of C reaches 1.37%, and this is to spread in silicon substrate because the hydrogen in atmosphere in this temperature range impels the hydrogen in silicon nitride, the defect and impurity in battery surface and body is carried out to passivation, 4000The above heat treatment of C is unfavorable to battery, and the hydrogen in silicon nitride starts to external diffusion, affects the compactness of silicon nitride film, and then affect its anti-reflection effect, last battery efficiency sharply declines, and external diffusion phenomenon does not occur for hydrogen in this procedure body, so the minority carrier life time of battery does not reduce; Heat treatment in air, temperature is 2200C-3000C scope battery efficiency has raising in various degree, and the not corresponding raising of minority carrier life time, 3500The above heat treatment of C, battery efficiency sharply declines, but minority carrier life time increases substantially, and we infer is to have occurred battery burn-off phenomenon.
S5, after Overheating Treatment, be cooled to room temperature until sample, take out sample, measure efficiency and the minority carrier life time of sample after heat treatment.
Embodiment 3
A kind of solar battery sheet efficiently, comprise silicon nitride anti-reflection film 1, N-type heavily doped layer 3, P type layer-of-substrate silicon 4 and back of the body passivation layer 6, the thickness of described silicon nitride anti-reflection film 1 is 60 nanometers, the thickness of described N-type heavily doped layer 3 is 0.55 micron, described N-type heavily doped layer 3 is connected with P type layer-of-substrate silicon 4, and described N-type heavily doped layer 3 and P type layer-of-substrate silicon 4 form PN junction, described silicon nitride anti-reflection film 1 is arranged on the upper surface of N-type heavily doped layer 3, the bilateral symmetry of described silicon nitride anti-reflection film 1 is provided with two groups of positive electrodes 2, between described back of the body passivation layer 6 and P type layer-of-substrate silicon 4, be provided with membranous layer of silicon oxide 5, the thickness of described membranous layer of silicon oxide 5 is 10 nanometers, the bilateral symmetry of described back of the body passivation layer 6 is inlaid with back electrode 7.
The preparation method that the invention allows for a kind of efficient solar battery sheet and Technology for Heating Processing thereof, comprises the steps:
S1, laboratory sample are the 156*156mm that uses industrial standard2P type polycrystalline silicon solar cell sheet, be that YAG-50 digital control laser scribing machine is cut large stretch of battery into pieces to there are enough laboratory samples by model, then be numbered processing, this numbering is corresponding in the position of large stretch of battery with small pieces battery, and the former edge of battery is not cut;
S2, the edge W20 abrasive paper for metallograph hand that small pieces battery is cut by laser grind off 0.1-0.15mm thickness, to prevent from cutting the measurement of experimental result after Effect of Short Circuit after rear battery front side and backside melting; Owing to may causing front silver grating line and back metal short circuit in laser cutting cell piece process, therefore need polishing;
S3, by the baby battery sheet preparing, be that XJCM-9 solar simulator is measured efficiency before heat treatment by model, use WT2000 minority carrier lifetime tester to measure battery minority carrier life time, quantum efficiency, diffusion velocity, resistivity and light beam induced current etc.;
S4, the vacuum tube furnace that sample is put into CVD-06 are heat-treated, two one group, samples (as far as possible ensureing that adjacent two small pieces are together), and when heat treatment, holding temperature is respectively 4000C, temperature retention time is respectively 15min; The rate of heat addition is 50C/min, cooldown rate are 30C/min；
S5, after Overheating Treatment, be cooled to room temperature until sample, take out sample, measure efficiency and the minority carrier life time of sample after heat treatment.
In sum: compared with prior art, the present invention is a kind of solar battery sheet efficiently, and it,, on P type layer-of-substrate silicon surface, utilizes POCl3Liquid source diffusion technique makes the N-type heavily doped layer that thickness is about 0.5um, and P type layer-of-substrate silicon contacts with N-type heavily doped layer, forms PN junction, produce photovoltaic effect, meanwhile, positive electrode can form good Ohmic contact with N-type heavily doped layer, for collecting photogenerated current, the silicon nitride anti-reflection film that is positioned at the superiors plays passivation and antireflecting effect, back of the body passivation layer contacts with P type silicon chip, in the process of sintering, forms good Al back surface field, reduce back of the body surface recombination current, increase open-circuit voltage; Meanwhile, technique provided by the invention heat treatment in argon gas, nitrogen hydrogen mixeding gas, temperature retention time 15min, heat treatment temperature is 2200C-4000Between C, can improve battery efficiency and minority carrier life time, especially temperature is 3000C-4000When C, raising by a relatively large margin the efficiency of battery, 3500Definitely raising amount of C reaches 1.37%, and this is to spread in silicon substrate because the hydrogen in atmosphere in this temperature range impels the hydrogen in silicon nitride, the defect and impurity in battery surface and body is carried out to passivation, 4000The above heat treatment of C is unfavorable to battery, and the hydrogen in silicon nitride starts to external diffusion, affects the compactness of silicon nitride film, and then affect its anti-reflection effect, last battery efficiency sharply declines, and external diffusion phenomenon does not occur for hydrogen in this procedure body, so the minority carrier life time of battery does not reduce; Heat treatment in air, temperature is 2200C-3000C scope battery efficiency has raising in various degree, and the not corresponding raising of minority carrier life time, 3500The above heat treatment of C, battery efficiency sharply declines, but minority carrier life time increases substantially, and we infer is to have occurred battery burn-off phenomenon.
The above; it is only preferably detailed description of the invention of the present invention; but protection scope of the present invention is not limited to this; any be familiar with those skilled in the art the present invention disclose technical scope in; be equal to replacement or changed according to technical scheme of the present invention and inventive concept thereof, within all should being encompassed in protection scope of the present invention.
Claims (8)
1. an efficient solar battery sheet, comprise silicon nitride anti-reflection film (1), N-type heavily doped layer (3), P type layer-of-substrate silicon (4) and back of the body passivation layer (6), it is characterized in that: described N-type heavily doped layer (3) is connected with P type layer-of-substrate silicon (4), and described N-type heavily doped layer (3) and P type layer-of-substrate silicon (4) form PN junction, described silicon nitride anti-reflection film (1) is arranged on the upper surface of N-type heavily doped layer (3), the bilateral symmetry of described silicon nitride anti-reflection film (1) is provided with two groups of positive electrodes (2), between described back of the body passivation layer (6) and P type layer-of-substrate silicon (4), be provided with membranous layer of silicon oxide (5), the bilateral symmetry of described back of the body passivation layer (6) is inlaid with back electrode (7).
2. the efficient solar battery sheet of one according to claim 1, is characterized in that: the thickness of described N-type heavily doped layer (3) is 0.35-0.55 micron.
3. the efficient solar battery sheet of one according to claim 1, is characterized in that: the thickness of described membranous layer of silicon oxide (5) is 1-10 nanometer.
4. the efficient solar battery sheet of one according to claim 1, is characterized in that: the thickness of described silicon nitride anti-reflection film (1) is 10-60 nanometer.
5. a Technology for Heating Processing for efficient solar battery sheet described in claim 1, is characterized in that: comprise the steps:
S1, laboratory sample are the 156*156mm that uses industrial standard2P type polycrystalline silicon solar cell sheet, be that YAG-50 digital control laser scribing machine is cut large stretch of battery into pieces to there are enough laboratory samples by model, then be numbered processing, this numbering is corresponding in the position of large stretch of battery with small pieces battery, and the former edge of battery is not cut;
S2, the edge W20 abrasive paper for metallograph hand that small pieces battery is cut by laser grind off 0.1-0.15mm thickness, to prevent from cutting the measurement of experimental result after Effect of Short Circuit after rear battery front side and backside melting; Owing to may causing front silver grating line and back metal short circuit in laser cutting cell piece process, therefore need polishing;
S3, by the baby battery sheet preparing, be that XJCM-9 solar simulator is measured efficiency before heat treatment by model, use WT2000 minority carrier lifetime tester to measure battery minority carrier life time, quantum efficiency, diffusion velocity, resistivity and light beam induced current etc.;
S4, the vacuum tube furnace that sample is put into CVD-06 are heat-treated, two one group, samples (as far as possible ensureing that adjacent two small pieces are together), and when heat treatment, holding temperature is respectively 220-4000C, temperature retention time is respectively 5-15min; The rate of heat addition is 50C/min, cooldown rate are 30C/min；
S5, after Overheating Treatment, be cooled to room temperature until sample, take out sample, measure efficiency and the minority carrier life time of sample after heat treatment.
6. the efficient solar battery sheet of one according to claim 5 and Technology for Heating Processing thereof, it is characterized in that: described vacuum tube furnace inert gas used is argon gas, nitrogen hydrogen mixeding gas, heat treatment in argon gas, nitrogen hydrogen mixeding gas, temperature retention time 15min, heat treatment temperature is 2200C-4000Between C, can improve battery efficiency and minority carrier life time, especially temperature is 3000C-4000When C, raising by a relatively large margin the efficiency of battery, 3500Definitely raising amount of C reaches 1.37%, and this is to spread in silicon substrate because the hydrogen in atmosphere in this temperature range impels the hydrogen in silicon nitride, the defect and impurity in battery surface and body is carried out to passivation, 4000The above heat treatment of C is unfavorable to battery, and the hydrogen in silicon nitride starts to external diffusion, affects the compactness of silicon nitride film, and then affect its anti-reflection effect, last battery efficiency sharply declines, and external diffusion phenomenon does not occur for hydrogen in this procedure body, so the minority carrier life time of battery does not reduce; Heat treatment in air, temperature is 2200C-3000C scope battery efficiency has raising in various degree, and the not corresponding raising of minority carrier life time, 3500The above heat treatment of C, battery efficiency sharply declines, but minority carrier life time increases substantially, and we infer is to have occurred battery burn-off phenomenon.
7. the efficient solar battery sheet of one according to claim 6 and Technology for Heating Processing thereof, is characterized in that: the nitrogen of described nitrogen hydrogen mixeding gas and the volume ratio of hydrogen are 1:9.
8. the efficient solar battery sheet of one according to claim 5 and Technology for Heating Processing thereof, is characterized in that: in S4, when described heat treatment, holding temperature is respectively 2200C、2500C、2800C、3000C、3500C and 4000C, temperature retention time is respectively 5min, 10min and 15min.
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Application publication date: 20160518 |