CN105590928B - LED encapsulation structure and packaging method - Google Patents
LED encapsulation structure and packaging method Download PDFInfo
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- CN105590928B CN105590928B CN201610029675.8A CN201610029675A CN105590928B CN 105590928 B CN105590928 B CN 105590928B CN 201610029675 A CN201610029675 A CN 201610029675A CN 105590928 B CN105590928 B CN 105590928B
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004806 packaging method and process Methods 0.000 title abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000005457 optimization Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 239000004642 Polyimide Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 241000218202 Coptis Species 0.000 description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004568 cement Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 241001050985 Disco Species 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation structure and packaging methods.A kind of LED encapsulation structure includes: substrate；At least two LED chips being disposed on the substrate；At least two fluorescent glue portions are covered each by each LED chip by fluorescent glue and are formed, and the fluorescent glue portion makes at least one LED chip have different colour temperatures from the light beam that other LED chips finally project；Through the pin of substrate setting, the pin is corresponding with the LED chip quantity, and each LED chip is electrically connected with corresponding pin；And it is coated on the passivation layer in region around the substrate, other than the fluorescent glue portion and pin.The present invention can adjust the spacing of LED chip according to user demand, formulate the integrated adjustable color temperature LED component of encapsulation of different spacing.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of LED encapsulation structures and packaging method.
Background technique
LED (Light Emitting Diode) i.e. light emitting diode, is widely used in not with its good performance
Same lighting area.However as the development of lighting engineering, the LED chip of single colour temperature and brightness is no longer satisfied different fields
The lighting demand of conjunction.Therefore adjustable color temperature LED occurs on the market.
Currently, color temperature-tunable LED, such as be widely used according to the double-colored temperature LED that customer demand customizes corresponding colour temperature
In the flash lamp of illumination and handheld device, it is particularly applied to the flash lamp field of smart phone.Flash of light as filming apparatus
Lamp, double-colored temperature LED is compared to single led, and meeting is so that the captured photographic quality out of filming apparatus is more bright-coloured, shooting effect
It is more life-like.And mostly use the LED of a warm white and a high brightness cool white greatly currently used for the double-colored temperature LED of flash lamp
It is used cooperatively, to achieve the effect that double-colored temperature LED.But for this situation being used cooperatively using two LED, when being used
When the flash lamp of filming apparatus, since the spacing between two LED can generate very the shooting effect for shooting the photo come
It is big to influence, it is therefore desirable to the spacing of two individual LED is adjusted, thus the placement-and-routing of circuit (layout) is made
At certain difficulty.
Summary of the invention
The present invention is based on defects of the existing technology, propose a kind of based on the LED encapsulation structure of CSP and its encapsulation side
Method.
According to an aspect of the present invention, a kind of LED encapsulation structure is provided, comprising:
Substrate；
At least two LED chips being disposed on the substrate；
At least two fluorescent glue portions are covered each by each LED chip by fluorescent glue and are formed, and the fluorescent glue portion makes at least
One LED chip has different colour temperatures from the light beam that other LED chips finally project；
Through substrate setting pin, the pin is corresponding with the LED chip quantity, each LED chip and
Corresponding pin electrical connection；And
It is coated on the passivation layer in region around the substrate, other than the fluorescent glue portion and pin.
Further, in the fluorescent glue portion, the content or type of the fluorescent powder at least one fluorescent glue portion are different from it
His fluorescent glue portion.
Further, at least two LED chip includes the first LED chip and the second LED chip, the first LED
Chip and the second LED chip are blue-light LED chip.
Further, being electrically connected for LED chip and pin is realized using conducting wire or conductive layer.
Further, the passivation layer is formed using light-sensitive polyimide.
According to another aspect of the present invention, a kind of LED encapsulation method is provided, comprising:
Pin forming step forms through hole on substrate, and fills metal in the through hole, is used to form pipe
Foot；
At least two LED chips are fixed on substrate by chip fixing step, and keep the LED chip each with it respectively
From pin electrical connection；
Fluorescent glue portion forming step coats fluorescent glue on each LED chip respectively, to form at least two fluorescence
Glue portion, wherein it is different that the fluorescent glue portion has at least one LED chip from the light beam that other LED chips finally project
Colour temperature；
Passivation layer formation step, the position on substrate other than fluorescent glue portion and pin form passivation layer；And
Separating step, cutting substrate form the LED encapsulation structure of separation.
Further, the pin forming step includes:
According to arrangement of the LED chip on substrate, through hole is formed on the substrate；And
Metal is filled into the through hole.
Further, the chip fixing step includes:
On the substrate with the opposed stickup of preset distance by least two LED chips；And
The electrode of each LED chip and being electrically connected for its respective pin are realized using conducting wire, or
Electroplated conductive layer realizes the electrode of each LED chip and being electrically connected for its respective pin.
Further, fluorescent glue portion forming step includes:
Different fluorescent glues is respectively coated at least two LED chips；
Make fluorescence adhesive curing, to form different fluorescent glue portions.
Further, the passivation layer formation step includes:
The material of passivation layer is formed in the upper and lower surface spin coating of substrate；
Photoetching is carried out respectively to the upper and lower surface for the substrate for being coated with passivation layer so that the fluorescent glue portion of upper surface of base plate with
And expose positioned at the pin position of base lower surface；And
Along both direction cutting in length and breadth, and in slot, filling forms institute for position between each LED chip pair on substrate
The material of passivation layer is stated, circumferentially to form the passivation layer in substrate.
Further, the method also includes:
Pin Optimization Steps pass through plating metal at the pin position after base lower surface exposes pin position
Mode forms the pin.
Further, the separating step includes:
The substrate is cut along the middle position of the slot, forms the LED encapsulation structure of separation.
Further, in the fluorescent glue portion, the content or type of the fluorescent powder at least one fluorescent glue portion are different from it
His fluorescent glue portion.
Further, pin forming step further comprises: the pin is formed by way of plating metal.
The LED encapsulation structure of the preferred embodiment of the present invention, by the way that at least two LED chips are disposed on the substrate,
Each LED chip surface is covered each by using fluorescent glue and forms fluorescent glue portion, the fluorescent glue portion makes at least two LED
At least one LED chip has different colour temperatures from the light beam that other LED chips finally project；Substrate is provided with pin,
Each LED chip respectively with corresponding pin be electrically connected, passivation layer be coated on around the substrate in addition to fluorescent glue with
And the region except pin, form the integrated chip of the adjustable color of CSP encapsulation.Preferably, by using containing glimmering
Light powder content or diverse fluorescent glue constitute the encapsulating structure of adjustable color.Also, in the encapsulation process of encapsulating structure,
It can be set as needed the spacing between at least two LED chips, to meet different lighting demands.Meanwhile realizing institute
It states the packaging method of encapsulating structure and not only the LED encapsulation method of compatible conventional but also had taken full advantage of semiconductor core machining process, make
The two technique combines.Moreover, adjustable color temperature LED encapsulation structure is easily isolated.
Preferably, the color temperature-tunable LED encapsulation structure of the preferred embodiment of the present invention, the LED chip are two,
Double-colored temperature LED encapsulation structure is obtained by using two kinds of different fluorescence powder contents or the fluorescent glue of quantity, production.Preferably, double
Colour temperature LED refers to warm white LED and cool white LED, and warm white LED colour temperature is low.Usual warm white LED colour temperature is 3000K, cool white
Color LED colour temperature is greater than 7000K.
Further detailed description is done to technical solution of the present invention below in conjunction with the drawings and the specific embodiments, the present invention
Beneficial effect will be further appreciated.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present invention, constitutes a part of the invention, is used for
It explains the present invention, does not constitute improper limitations of the present invention.
Fig. 1 (a), 1 (b) schematically show double-colored temperature LED encapsulation structure according to one preferred embodiment of the present invention
Sectional view and top view.
Fig. 2 schematically shows the sectional views of the double-colored temperature LED encapsulation structure of another preferred embodiment according to the present invention.
Fig. 3 shows the flow chart of the packaging method according to the present invention.
Fig. 4 (a), 4 (b) is according to the schematic diagrames of the pin forming step in packaging method of the present invention.
Fig. 5 (a), 5 (b) is according to the schematic diagrames of the chip fixing step in packaging method of the present invention.
Fig. 6 is the schematic diagram according to the fluorescent glue portion forming step in packaging method of the present invention.
Fig. 7 (a)-(c) is the schematic diagram according to the passivation layer formation step in packaging method of the present invention.
Fig. 8 is the schematic diagram of the pin Optimization Steps in packaging method according to the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the specific embodiment of the invention and
Technical solution of the present invention is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the present invention one
Section Example, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
Chip size packages (CSP, Chip Scale Package) are used as a kind of chip package form or standard, encapsulation
Size and chip core size are essentially identical, such as the ratio of chip core area and package area is about 1:1.1, therefore are known as
CSP.LED encapsulation structure and its packaging method of the present invention are to be based on CSP, so that described color temperature-tunable after encapsulation
The size of LED encapsulation structure and chip core size are essentially identical.LED encapsulation structure according to the present invention comprising: base
Plate；At least two LED chips being disposed on the substrate；At least two fluorescent glue portions are covered each by each LED chip by fluorescent glue
It is formed, the fluorescent glue portion makes at least one LED chip have different colors from the light beam that other LED chips finally project
Temperature；Through substrate setting pin, the pin is corresponding with the LED chip quantity, each LED chip with it is corresponding
Pin electrical connection；And it is coated on the passivation in region around the substrate, other than the fluorescent glue portion and pin
Layer.
It should be noted that fluorescent glue, which is covered each by each LED chip, forms fluorescent glue portion, fluorescent glue is not limited only
Cover LED chip part, the connected component of LED chip can be covered by also covering fluorescent glue, for example, fluorescent glue can cover with
The part of lead or conductive layer that LED chip is electrically connected, the pin that can also be covered together lead and be electrically connected with lead exist
Substrate has the exposed portion in the LED chip side.
Color temperature-tunable LED encapsulation structure of the present invention and its packaging method are illustrated below in conjunction with attached drawing.It needs
It is noted that for convenience, being carried out by taking double-colored temperature LED encapsulation structure as an example to embodiments of the present invention below the present invention
Illustrate, however those skilled in the art it can be appreciated that, the method for the invention and structure can be obviously applied to more
Colour temperature LED.
Fig. 1 (a), 1 (b) schematically show double-colored temperature LED encapsulation structure according to one preferred embodiment of the present invention
Sectional view and top view.As shown in Fig. 1 (a), 1 (b), the double-colored temperature LED encapsulation structure includes substrate 1, and setting is on substrate 1
The first LED chip 71With the second LED chip 72, it is covered on the first LED chip 71The first fluorescent glue portion 5 and be covered on second
LED chip 72The second fluorescent glue portion 6, through substrate 1 upper and lower surface and the first pin 4 for being arranged1With the second pin 42, institute
State the first LED chip 71With the first pin 41Electrical connection, the second LED chip 72With the second pin 42Electrical connection；And it is coated on base
The passivation layer 2 in the region around plate 1 in addition to the first fluorescent glue portion 5 and the second fluorescent glue portion 6 and each pin.
The preferred silicon wafer of the substrate 1, such as wafer.First LED chip 7 on the substrate 1 is set1With
Two LED chips 72It is preferred that blue-ray LED, can also choose the light source of other colors as needed, be pasted onto by, for example, heat-conducting glue
On substrate 1.First fluorescent glue portion 5 is different with the content or type of fluorescent powder in the second fluorescent glue portion 6, so that two
The light beam that LED chip finally projects has different colour temperatures, such as the warm white light source and colour temperature of respectively colour temperature about 3000K
Cool white color light source greater than 7000K.First and second fluorescent glue portion can be mixed by fluorescent powder and epoxy resin, certainly,
It is merely illustrative herein, as long as the fluorescent powder and fluorescent glue with required colour temperature can be formed.
First pin 41With the second pin 42By the metal, such as copper, aluminium of upper and lower surface etc. that run through the substrate 1
It is formed.As shown in Fig. 1 (b), a pair of first pin 41It is formed in the first LED chip 71Two sides, two pins are located at substrate 1
One end of upper surface and the first LED chip 71Form electrical connection.A pair of second pin 42It is formed in the second LED chip 72Two sides, two
One end of the upper surface positioned at substrate 1 of pin and the second LED chip 72Electrical connection.In a preferred embodiment, using leading
Line, such as using gold thread 8, the electrical connection is realized by the way of gold thread bonding.The passivation layer 2 is used to form protective layer,
It is preferred that light-sensitive polyimide is made, other light-sensitive materials can also be used.
Fig. 2 schematically shows the sectional views of the double-colored temperature LED encapsulation structure of another preferred embodiment according to the present invention.
As shown in Fig. 2, it is that LED chip is different with the electric connection mode of pin from Fig. 1 (a), the difference of 1 (b) illustrated embodiment, specifically
Being electrically connected between the light source and its each pin, remaining structure and first preferred embodiment phase are realized using conductive layer 9 in ground
Together, details are not described herein.Formation for conductive layer 9, is further described below.
Illustrate color temperature-tunable LED encapsulation method according to the present invention below, this method comprises: pin forms step
Suddenly, through hole is formed on substrate, and fills metal in the through hole to form pin；Chip fixing step, will at least
Two LED chips are fixed on substrate, and are electrically connected the LED chip with its respective pin respectively；Fluorescent glue portion is formed
Step coats fluorescent glue on each LED chip respectively, to form at least two fluorescent glue portions, wherein the fluorescent glue
Portion makes at least one LED chip have different colour temperatures from the light beam that other LED chips finally project；Passivation layer formation portion,
Position on substrate other than fluorescent glue portion and pin forms passivation layer；And separating step, cutting substrate form separation
Color temperature-tunable LED encapsulation structure.Below in conjunction with Fig. 3,4 (a) -4 (b), 5 (a) -5 (b), 6,7 (a) -7 (c) and Fig. 8 with
For the packaging method for obtaining above-mentioned double-colored temperature LED encapsulation structure, the above-mentioned color temperature-tunable LED of acquisition according to the present invention is described
The packaging method of encapsulating structure.Similar with above-mentioned double-colored temperature encapsulating structure, the present invention is expressly not limited to the envelope of double-colored temperature LED
Dress method.
Fig. 3 shows the flow chart of the packaging method according to the present invention.As shown in figure 3, the packaging method includes: pipe
Foot forming step forms through hole on substrate 1, and fills metal in hole to form pin；Chip fixing step, will be described
First LED chip 71With the second LED chip 72It fixes on substrate 1, and makes the first, second LED chip and its respective pin shape
At electrical connection；Fluorescent glue is respectively coated on the first, second opposed LED chip to be respectively formed in fluorescent glue portion forming step
First fluorescent glue portion 5 and the second fluorescent glue portion 6；Passivation layer formation step, in addition to the first, second fluorescent glue portion and pipe on substrate
The position of foot forms the passivation layer 2；And separating step, cutting substrate, form each color temperature-tunable LED encapsulation knot
Structure.Each step is described in detail below.
Step S1: pin forming step forms through hole on substrate 1, and fills metal in hole to form each pipe
Foot, as shown in Fig. 4 (a), 4 (b).
Specifically, silicon wafer is chosen as substrate 1, and is formed on multiple through hole H, as shown in Fig. 4 (a).To mention
High drilling precision, preferably by laser boring.Arrangement of multiple through hole according to the size of LED chip and its on substrate 1
Arranged in rows, in the present invention, for forming double-colored temperature LED chip, opposite one another, pin is formed in two pairs to the LED chip
The outside in LED chip set.However the present invention is not limited thereto, about between the arrangement of pin hole, including each pair of pin hole
Distance and the distance between two pairs of pin holes etc., can be according to the size, quantity and its arrangement side on substrate of LED chip
Formula determines.Further, it for the LED encapsulation structure of double-colored temperature, can according to need between two LED chips of setting
Distance, so then when forming pin hole with reference to the distance setting pin hole arrangement mode.
Next, filling metal 3, such as copper, aluminium etc., to form each pin, i.e., each first pin 4 in the hole1
With the second pin 42, as shown in Fig. 4 (b).Metal 3 is filled, such as can use filling device and liquid metal is filled into hole,
And make described metal-cured.
Further, by plating metal, such as copper, tin, nickel or gold etc., and the mode preferably mechanically polished generate it is described
Pin (as shown in Figure 8).It should be noted that the step can also carry out after the passivation layer is formed, as described below.
Step S2: chip fixing step, i.e., by first LED chip 71With the second LED chip 72It fixes on substrate 1,
And make the first LED chip 71, the second LED chip 72It is electrically connected with its respective described pin formation.
Specifically, firstly, by first LED chip 71With the second LED chip 72It is opposed to be placed and secured in substrate 1
On two pairs of pins between, as shown in Fig. 5 (a).First LED chip 71With the second LED chip 72It is preferred that blue-ray LED, certainly
As needed, the LED of other colors also can be selected.As described above, it can use heat-conducting glue and the LED chip pasted into institute
It states on substrate 1, naturally it is also possible to using other stickups or other fixed forms, so that the LED chip is solid on the substrate 1
It is fixed.Herein, as described above, the first LED chip 71With the second LED chip 72The distance between can previously according to needing to be arranged,
To meet the different demands to adjustable color temperature light source, such as size etc..
Next, making the first LED chip 71With the second LED chip 72It is electrically connected with its respective pin, such as Fig. 5 (b)
It is described.
(correspond to Fig. 1 (a), structure shown in 1 (b)) in one embodiment of the invention, using conducting wire, for example, by using
The mode of gold thread bonding, the electrode of two LED chips and its respective pin are connected, and realize the electrical connection of the two.Specifically
Ground, as shown in Fig. 5 (b), for the first LED chip 71, use, such as the mode that gold thread is bonded is respectively by its electrode and its two sides
The first pin of a pair 41Electrical connection.Likewise, for the second LED chip 72Respectively by a pair second of its electrode and its two sides
Pin 42Electrical connection.
(correspond to structure shown in Fig. 2) in another embodiment of the present invention, it is real in the way of electroplated conductive layer
Show the electrode of two LED chips and being electrically connected for its respective pin.Specifically, photosensitive poly- in the upper surface spin coating of substrate 1 first
Acid imide, spin coating thickness is the same as the LED chip thickness.Photoetching is carried out later, exposes the LED chip and the pin portion
Point.Next the electroplated conductive layer between LED core plate electrode and the pin, and other are useless preferably by mechanical polishing removal
Metal, to realize the electrode of LED chip and being electrically connected for its respective pin.It is of course also possible to electroplated metal layer first, then revolve
Above-mentioned light-sensitive polyimide is applied, electroplated metal layer useless by erosion removal later.
Step S3: fluorescent glue portion forming step, respectively in the first LED chip 71With the second LED chip 72Upper coating simultaneously solidifies
Fluorescent glue is to be respectively formed the first fluorescent glue portion 5 and the second fluorescent glue portion 6, so that the first LED chip 71With the second LED chip 72
The light finally projected has different-colour.
As shown in fig. 6, utilizing, such as dispenser, two different fluorescent glues are respectively coated on the first LED chip 71With
Second LED chip 72On.As described above, the content of fluorescent powder or diverse fluorescent glue in two different fluorescent glues,
Light beam to project in first fluorescent glue portion 5 and the second fluorescent glue portion 6 through being formed has different colour temperatures, such as divides
Not Wei colour temperature about 3000K warm white light source and colour temperature be greater than 7000K cool white color light source.Next, to glimmering after coating
Optical cement is heated to be allowed to solidify, to form the first fluorescent glue portion 5 and the second fluorescent glue portion 6.Specifically, such as high temperature makes
The fluorescence adhesive curing.
Step S4: passivation layer formation step, in substrate 1 in addition to the first fluorescent glue portion 5, the second fluorescent glue portion 6 and pin
Position form the passivation layer 2.
Fig. 7 (a) -7 (c) shows the step of formation passivation layer of a preferred embodiment of the invention.Firstly, such as Fig. 7
(a), it shown in 7 (b), utilizes, such as coating machine forms the material of passivation layer in the upper and lower surface spin coating of substrate 1.Form passivation layer
The preferred light-sensitive material of material, such as light-sensitive polyimide or other light-sensitive materials.Preferably coat is heated later
It is allowed to solidify as early as possible.
Then, photoetching is carried out respectively using upper and lower surface of such as litho machine to the substrate 1 for being coated with passivation layer, so that base
First fluorescent glue portion 5 of 1 upper surface of plate, the second fluorescent glue portion 6 (each border circular areas as shown in Fig. 7 (a)) and be located at base
Expose at the pin position of 1 lower surface of plate.
Next, the position between each column LED chip pair in the upper surface for the substrate for foring passivation layer to its upper and lower surface
It sets along both direction cutting in length and breadth, and fills light-sensitive polyimide in slot, as shown in Fig. 7 (c).By being filled in the slot
Light-sensitive polyimide is realized and forms the passivation layer 2 in the circumferential direction of substrate 1.
It further, can also be after passivation layer formation step, it preferably includes pin Optimization Steps utilize such as photoetching
Machine carries out photoetching to the upper surface for the substrate 1 for being coated with passivation layer, so that the first fluorescent glue portion 5, second of 1 upper surface of substrate is glimmering
Expose in optical cement portion 6 (each border circular areas as shown in Fig. 7 (a))；Using such as litho machine to the substrate 1 for being coated with passivation layer
Lower surface carries out photoetching, so that the pin hole (each square region as shown in Fig. 7 (b)) for being located at 1 lower surface of substrate is exposed, it
Afterwards, the position that the pin hole in the lower surface of substrate 1 is exposed further generates the pin of optimization.Specifically, by electro-coppering,
The metals such as tin, nickel or gold and the mode preferably mechanically polished further generate the pin of optimization as shown in Figure 8.This passes through plating
The step of above-mentioned metal optimization pin, can also reside in pin forming step S1 as known to above to the description of step S1.
Step S5: separating step, i.e. cutting substrate form each color temperature-tunable LED encapsulation structure.
To generate the final color temperature-tunable LED encapsulation structure respectively separated, need to cut the substrate.Cutting
It is preferable to use DISCO scribing machine or laser dicings.For using DISCO scribing machine, preferably cutting line is set in described
It is wherein filled with the middle position of each slot in the transverse and longitudinal direction of light-sensitive polyimide, to make finally to obtain each color temperature-tunable
The structure of LED encapsulation structure is uniform, identical.
Color temperature-tunable LED encapsulation structure of the invention and packaging method are illustrated in conjunction with attached drawing above.According to
More LED chips are packaged together by the solution of the present invention using silicon wafer, and utilize fluorescence powder content or diverse glimmering
Optical cement coats LED chip surface to form color temperature-tunable LED encapsulation structure.Color temperature-tunable LED according to the present invention
Encapsulating structure constitutes the encapsulating structure of adjustable color due to being packaged together multiple LED chips, in the encapsulation of encapsulating structure
Cheng Zhong can be set as needed the spacing between two LED chips, to meet different lighting demands.Meanwhile described in realization
The packaging method of encapsulating structure not only the LED encapsulation method of compatible conventional but also had taken full advantage of semiconductor core machining process.
To sum up, it will be readily appreciated by those skilled in the art that under the premise of not conflicting, above-mentioned each advantageous manner can be certainly
It combined, be superimposed by ground.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, according to
According to technical spirit any simple modification, equivalent change and modification to the above embodiments of the invention, this hair is still fallen within
In the range of bright technical solution.
Claims (8)
1. a kind of LED encapsulation method, characterized by comprising:
Pin forming step forms through hole on substrate, and fills metal in the through hole, is used to form pin；
At least two LED chips are fixed on substrate by chip fixing step, and keep the LED chip respective with it respectively
Pin electrical connection；
Fluorescent glue portion forming step, coats fluorescent glue on each LED chip respectively, to form at least two fluorescent glue portions,
In, the fluorescent glue portion makes at least one LED chip have different colour temperatures from the light beam that other LED chips finally project；
Passivation layer formation step, the position on substrate other than fluorescent glue portion and pin form passivation layer；And
Separating step, cutting substrate form the LED encapsulation structure of separation；
Wherein, the passivation layer formation step includes:
The material of passivation layer is formed in the upper and lower surface spin coating of substrate；
Photoetching is carried out respectively to the upper and lower surface for the substrate for being coated with passivation layer, so that the fluorescent glue portion of upper surface of base plate and position
Expose in the pin position of base lower surface；And
Position between each LED chip pair on substrate along both direction cutting in length and breadth, and in slot filling formed it is described blunt
Change the material of layer, circumferentially to form the passivation layer in substrate.
2. the method as described in claim 1, which is characterized in that wherein, pin forming step includes:
According to arrangement of the LED chip on substrate, through hole is formed on the substrate；And metal is filled into described
In through hole.
3. the method as described in claim 1, which is characterized in that wherein, chip fixing step includes:
On the substrate with the opposed stickup of preset distance by least two LED chips；And
The electrode of each LED chip and being electrically connected for its respective pin are realized using conducting wire, or
Electroplated conductive layer realizes the electrode of each LED chip and being electrically connected for its respective pin.
4. the method as described in claim 1, which is characterized in that wherein, fluorescent glue portion forming step includes: by different fluorescence
Glue is respectively coated at least two LED chips；
Make fluorescence adhesive curing, to form different fluorescent glue portions.
5. the method as described in claim 1, which is characterized in that the method further includes:
Pin Optimization Steps, after base lower surface exposes pin position, at the pin position by way of plating metal
Form the pin.
6. the method as described in claim 1, which is characterized in that wherein, separating step includes:
The substrate is cut along the middle position of the slot, forms the LED encapsulation structure of separation.
7. the method as described in claim 1, which is characterized in that wherein, in the fluorescent glue portion, at least one fluorescent glue portion
The content or type of fluorescent powder are different from other fluorescent glue portions.
8. method according to claim 2, which is characterized in that wherein, pin forming step further comprises: passing through electroplating gold
The mode of category forms the pin.
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| US20100090231A1 (en) * | 2008-10-15 | 2010-04-15 | Samsung Led Co., Ltd. | Led package module |
| US20100219770A1 (en) * | 2007-05-14 | 2010-09-02 | Lumimicro Corp., Ltd. | White led device capable of adjusting correlated color temperature |
| CN104916627A (en) * | 2015-05-29 | 2015-09-16 | 广州市鸿利光电股份有限公司 | Mobile phone photographing flash lamp |
| CN205508860U (en) * | 2016-01-15 | 2016-08-24 | 珠海格力电器股份有限公司 | Led packaging structure |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100219770A1 (en) * | 2007-05-14 | 2010-09-02 | Lumimicro Corp., Ltd. | White led device capable of adjusting correlated color temperature |
| US20100090231A1 (en) * | 2008-10-15 | 2010-04-15 | Samsung Led Co., Ltd. | Led package module |
| CN104916627A (en) * | 2015-05-29 | 2015-09-16 | 广州市鸿利光电股份有限公司 | Mobile phone photographing flash lamp |
| CN205508860U (en) * | 2016-01-15 | 2016-08-24 | 珠海格力电器股份有限公司 | Led packaging structure |
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