CN105576095A - Nitride light-emitting diode and manufacturing method thereof - Google Patents
Nitride light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN105576095A CN105576095A CN201610135190.7A CN201610135190A CN105576095A CN 105576095 A CN105576095 A CN 105576095A CN 201610135190 A CN201610135190 A CN 201610135190A CN 105576095 A CN105576095 A CN 105576095A
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- Prior art keywords
- mgga
- nanocluster
- nitride
- type
- iii
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910017857 MgGa Inorganic materials 0.000 claims abstract description 42
- 230000000694 effects Effects 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a nitride light-emitting diode and a manufacturing method thereof. The nitride light-emitting diode comprises a P-type contact layer having MgGa nanocluster superlattices. High-conductivity MgGa nanoclusters serve as current expansion bridge contact points, so that diffusion length of a hole of the P-type contact layer is improved, expansion capability of the P-type current is improved, accumulation effect of the current is reduced, and lighting uniformity and ESD are improved.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, particularly a kind of iii-nitride light emitting devices and preparation method thereof.
Background technology
Now, light-emitting diode (LED), particularly iii-nitride light emitting devices, because of its higher luminous efficiency, have obtained in general lighting field and have applied widely.But due to because of the efficiency of ionization of P type Mg low, cause hole concentration low, the current expansion of P type nitride is poor and ohmic contact is poor, makes electrode after-current and easily accumulates in regional area, particularly electrode and expansion bar (Finger) are around, cause the problems such as the bad and ESD difference of uniformity of luminance.
Summary of the invention
In view of prior art exists P type hole extension length problem on the low side, this case proposes iii-nitride light emitting devices of a kind of MgGa of having nanocluster and preparation method thereof and improves above problem.
The object of the invention is: a kind of iii-nitride light emitting devices and preparation method thereof is provided, by high conduction performance MgGa cluster as current expansion bridge contact, solve P type causes the on the low side and current expansion deviation of hole concentration problem because Mg efficiency of ionization is low, promote the diffusion length in P type contact layer hole, improve the extended capability of P type electric current, that reduces electric current gathers effect, promotes luminous uniformity and ESD.
According to a first aspect of the invention, a kind of iii-nitride light emitting devices, comprise substrate successively, resilient coating, N-type nitride, Multiple Quantum Well, P type nitride and P type contact layer, it is characterized in that: described P type contact layer has MgGa nanocluster superlattice, by high conduction performance MgGa cluster as current expansion bridge contact, solve P type causes the on the low side and current expansion deviation of hole concentration problem because Mg efficiency of ionization is low, promote the diffusion length in P type contact layer hole, improve the extended capability of P type electric current, that reduces electric current gathers effect, promote luminous uniformity and ESD.
Further, described substrate is that sapphire, carborundum, silicon, gallium nitride, aluminium nitride, ZnO etc. are applicable to epitaxially grown substrate.
Further, described MgGa nanocluster is of a size of 10 ~ 500nm, preferred 50nm.
Further, described MgGa nanocluster superlattice are the nitride that every layer of P type nitride is covered with MgGa nanocluster, and every layer thickness is 5 ~ 500nm, preferred 10nm, and nanocluster densities is 1E7 ~ 1E12cm
-2, preferred 1E9cm
-2.
Further, the cycle of described MgGa nanocluster superlattice is N time (natural number of N>=1), preferred N=3.
According to a second aspect of the invention, a kind of manufacture method of iii-nitride light emitting devices, comprises following steps: (1) epitaxial growth buffer, N-type nitride, Multiple Quantum Well, P type nitride successively on the substrate 100; (2) low temperature method growth is adopted to have the P type contact layer of high pit density, as the saltation point of MgGa nanocluster; (3) growth has the P type contact layer of MgGa nanocluster superlattice.
Further, described step (2) growth has the P type contact layer of high pit density, first cools the temperature to 600 ~ 800 degree, preferably 700 degree, make nitride surface alligatoring, form intensive pit, as the saltation point of MgGa nanocluster, pit density is 1E7 ~ 1E12cm
-2, preferred 1E9cm
-2.
Further, described step (3) has the P type contact layer of MgGa nanocluster superlattice, first closes NH3, pass into Cp2Mg, overlay Mg nano dot, then close Mg, pass into TMGa, generate MgGa nanocluster, then, open NH3, pass into Cp2Mg/TMGA simultaneously, growth has the P type contact layer of MgGa nanocluster superlattice, repeats above step, and growth superlattice period is N time (natural number of N>=1).
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the iii-nitride light emitting devices of the embodiment of the present invention.
Fig. 2 is manufacture method step (1) schematic diagram of the iii-nitride light emitting devices of the embodiment of the present invention.
Fig. 3 is manufacture method step (2) schematic diagram of the iii-nitride light emitting devices of the embodiment of the present invention.
Fig. 4 is manufacture method step (3) schematic diagram of the iii-nitride light emitting devices of the embodiment of the present invention.
Fig. 5 is manufacture method step (3) the formation superlattice period of the iii-nitride light emitting devices of the embodiment of the present invention is the schematic diagram of N.
Fig. 6 is the floor map of the motor current expansion of the iii-nitride light emitting devices of the embodiment of the present invention.
Illustrate: 100: substrate, 101: resilient coating, 102:N type nitride, 103: Multiple Quantum Well, 104:P type nitride, 105: the P type contact layer with MgGa nanocluster superlattice, 105a: the saltation point of nanocluster, 105b:MgGa nanocluster, the superlattice of 105c:MgGa nanocluster.
Embodiment
Traditional iii-nitride light emitting devices, because the efficiency of ionization of P type Mg is low, cause hole concentration low, the current expansion of P type nitride is poor and ohmic contact is poor, make electrode after-current and easily accumulate in regional area (particularly electrode and Finger around), cause the problems such as the bad and ESD difference of uniformity of luminance.The present invention solves above problem by the iii-nitride light emitting devices making a kind of MgGa of having nanocluster, as shown in Figure 1, comprise substrate 100 successively, resilient coating 101, N-type nitride 102, Multiple Quantum Well 103, P type nitride 104, the size with P type contact layer 105, the MgGa nanocluster of MgGa nanocluster superlattice is about 50nm, and density is 1E9cm
-2, every layer thickness is the cycle of 10nm, MgGa nanocluster superlattice is 3 cycles.
The manufacture method of the iii-nitride light emitting devices that the present invention proposes, comprises step (1) ~ (3), and as shown in Fig. 2 ~ 4, repetition N time (natural number of N>=1) of line period of going forward side by side, forms superlattice structure, as shown in Figure 5.
First, step (1) adopts metal organic chemical vapor deposition (MOCVD) epitaxial growth buffer 101, N-type nitride 102, Multiple Quantum Well 103, P type nitride 104 successively on the substrate 100, as shown in Figure 2;
Then, step (2) growth has the saltation point 105a of the nanocluster of high pit density, as shown in Figure 3, first cool the temperature to 650 degree, the nitride that growing surface is coarse, form intensive pit, as the saltation point of MgGa nanocluster, pit density is 1E9cm
-2.
Finally, step (3) growth has the P type contact layer 105 of MgGa nanocluster superlattice, as shown in Figure 4, first NH3 is closed, temperature rises to 1000 degree, pass into Cp2Mg60s, overlay Mg nano dot, then Mg is closed, pass into TMGa30s, generate MgGa nanocluster 105b, size is about 50nm, then, open NH3, pass into Cp2Mg/TMGA simultaneously, growth has the P type contact layer of MgGa nanocluster superlattice, the thickness of every layer is about 100nm, repeat above step, the growth superlattice 105c cycle is N time (natural number of N>=1), as shown in Figure 5.
The present invention has the P type contact layer of MgGa nanocluster superlattice by making, form high conduction performance MgGa cluster as current expansion bridge contact, solve P type causes the on the low side and current expansion deviation of hole concentration problem because Mg efficiency of ionization rate is low, promote the diffusion length in P type contact layer hole, improve the extended capability of P type electric current, that reduces electric current gathers effect, and promote luminous uniformity and ESD, its effect schematic diagram as shown in Figure 5.
Above execution mode is only for illustration of the present invention; and be not intended to limit the present invention; those skilled in the art; without departing from the spirit and scope of the present invention; various modification and variation can be made to the present invention; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be looked Claims scope and be limited.
Claims (9)
1. an iii-nitride light emitting devices, comprise substrate successively, resilient coating, N-type nitride, Multiple Quantum Well, P type nitride and P type contact layer, it is characterized in that: described P type contact layer has MgGa nanocluster superlattice, by high conduction performance MgGa cluster as current expansion bridge contact, solve P type causes the on the low side and current expansion deviation of hole concentration problem because Mg efficiency of ionization is low, promote the diffusion length in P type contact layer hole, improve the extended capability of P type electric current, that reduces electric current gathers effect, promotes luminous uniformity and ESD.
2. a kind of iii-nitride light emitting devices according to claim 1, is characterized in that: described substrate is sapphire, carborundum, silicon, gallium nitride, aluminium nitride, ZnO are applicable to epitaxially grown substrate.
3. a kind of iii-nitride light emitting devices according to claim 1, is characterized in that: described MgGa nanocluster superlattice are that every layer of P type nitride contact layer is covered with MgGa nanocluster, and every layer thickness is 5 ~ 500nm.
4. a kind of iii-nitride light emitting devices according to claim 1, is characterized in that: described MgGa nanocluster is of a size of 10 ~ 500nm.
5. a kind of iii-nitride light emitting devices according to claim 1, is characterized in that: the density of described MgGa nanocluster is 1E7 ~ 1E12cm
-2.
6. a kind of iii-nitride light emitting devices according to claim 1, is characterized in that: the cycle of described MgGa nanocluster superlattice is N time (natural number of N>=1).
7. a manufacture method for iii-nitride light emitting devices, comprises following steps: (1) epitaxial growth buffer, N-type nitride, Multiple Quantum Well, P type nitride successively on substrate; (2) low temperature method growth is adopted to have the P type contact layer of high pit density, as the saltation point of MgGa nanocluster; (3) growth has the P type contact layer of MgGa nanocluster superlattice.
8. the manufacture method of a kind of iii-nitride light emitting devices according to claim 7, it is characterized in that: described step (2) growth has the P type contact layer of high pit density, cool the temperature to 600 ~ 800 degree, make nitride surface alligatoring, form intensive pit, as the saltation point of MgGa nanocluster, pit density is 1E7 ~ 1E12cm
-2.
9. the manufacture method of a kind of iii-nitride light emitting devices according to claim 7, it is characterized in that: described step (3) has the P type contact layer of MgGa nanocluster superlattice, first NH3 is closed, pass into Cp2Mg, overlay Mg nano dot, then Mg is closed, pass into TMGa, generate MgGa nanocluster, then, open NH3, pass into Cp2Mg/TMGA simultaneously, growth has the P type contact layer of MgGa nanocluster superlattice, repeats above step, and growth superlattice period is N time (natural number of N>=1).
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| CN201610135190.7A CN105576095B (en) | 2016-03-10 | 2016-03-10 | A kind of iii-nitride light emitting devices and preparation method thereof |
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| CN201610135190.7A CN105576095B (en) | 2016-03-10 | 2016-03-10 | A kind of iii-nitride light emitting devices and preparation method thereof |
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| CN105576095A true CN105576095A (en) | 2016-05-11 |
| CN105576095B CN105576095B (en) | 2018-02-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116230824A (en) * | 2023-05-08 | 2023-06-06 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709424A (en) * | 2012-06-11 | 2012-10-03 | 华灿光电股份有限公司 | Method for improving luminous efficiency of light-emitting diode |
| US20130009130A1 (en) * | 2011-07-08 | 2013-01-10 | Bridgelux, Inc. | Laterally contacted blue led with superlattice current spreading layer |
| CN103236480A (en) * | 2013-04-28 | 2013-08-07 | 华灿光电股份有限公司 | LED (light emitting diode) epitaxial wafer and manufacture method thereof |
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2016
- 2016-03-10 CN CN201610135190.7A patent/CN105576095B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130009130A1 (en) * | 2011-07-08 | 2013-01-10 | Bridgelux, Inc. | Laterally contacted blue led with superlattice current spreading layer |
| CN102709424A (en) * | 2012-06-11 | 2012-10-03 | 华灿光电股份有限公司 | Method for improving luminous efficiency of light-emitting diode |
| CN103236480A (en) * | 2013-04-28 | 2013-08-07 | 华灿光电股份有限公司 | LED (light emitting diode) epitaxial wafer and manufacture method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116230824A (en) * | 2023-05-08 | 2023-06-06 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip |
| CN116230824B (en) * | 2023-05-08 | 2023-07-18 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip |
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Effective date of registration: 20231024 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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