CN105576046A - Preparation method of no-main-grid solder strip used for solar cell - Google Patents
Preparation method of no-main-grid solder strip used for solar cell Download PDFInfo
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- CN105576046A CN105576046A CN201510933299.0A CN201510933299A CN105576046A CN 105576046 A CN105576046 A CN 105576046A CN 201510933299 A CN201510933299 A CN 201510933299A CN 105576046 A CN105576046 A CN 105576046A
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- Prior art keywords
- melt adhesive
- hot melt
- pur
- diaphragm
- copper cash
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 229910000679 solder Inorganic materials 0.000 title abstract 2
- 239000004831 Hot glue Substances 0.000 claims abstract description 59
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000012528 membrane Substances 0.000 claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims description 29
- 238000005520 cutting process Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 abstract 5
- 238000004804 winding Methods 0.000 abstract 2
- 230000008569 process Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a preparation method of a no-main-grid solder strip used for a solar cell. The method comprises the steps that multiple copper wires are released by a copper wire releasing rack to be conveyed to a hot pressing device; a first unwinding mechanism and a second unwinding mechanism respectively release a first hot melt adhesive membrane and a second hot melt adhesive membrane, the first hot melt adhesive membrane is cut so as to form multiple first hot melt adhesive membrane pieces, and the second hot melt adhesive membrane is cut so as to form multiple second hot melt adhesive membrane pieces, wherein the first hot melt adhesive membrane pieces and the second hot melt adhesive membrane pieces are respectively conveyed to the hot pressing device in turn in a mutually alternating way, the first hot melt adhesive membrane pieces are arranged above multiple copper wires, and the second hot melt adhesive membrane pieces are arranged below multiple copper wires; multiple copper wires and the first hot melt adhesive membrane pieces and the second hot melt adhesive membrane pieces are respectively combined through hot pressing by the hot pressing device; and winding operation is performed on multiple copper wires combined with the first hot melt adhesive membrane pieces and the second hot melt adhesive membrane pieces through hot pressing by a winding mechanism.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, be specifically related to a kind of preparation method without main grid welding for solar cell.
Background technology
Crystal silicon solar batteries is a kind of electronic devices and components that solar energy can be transformed into electric energy.In the front electrode of crystal silicon solar batteries, electrode structure generally includes crisscross main gate line and secondary grid line, and main gate line and secondary grid line are electrical connected.When there being illumination, cell piece will generation current, and electric current flows to the secondary grid line of surface electrode through internal emitter, and collecting then to be flowed in battery main gate line via secondary grid line derives.Can produce loss in the process that electric current is collected at secondary grid line, this we are called it is the power loss of resistance.Battery main gate line and secondary grid line are in the sensitive surface of battery, and will inevitably block a part of light like this and be radiated at battery surface, thus decrease the effective area of shining light of battery, this part loses us and is referred to as optical loss.The quantity increasing main gate line and secondary grid line can improve capacity gauge solar cell being formed to electric current, improves the conversion efficiency of battery, but if grid line width does not reduce, accelerates and just can increase eclipsing loss.Therefore, the core of the grid line design of electrode structure is to average out between shading and conduction.
In manufacture of solar cells technical foundation now, manufacturer is in order to improve the photovoltaic efficiency of battery further, the solution proposed is the main grid quantity increasing front electrode, become more than the thick main grid of 2 mm wides the narrow line main grid row that many are less than 1 mm wide from two or three, even adopt the two-layer silver grating line of overlapping printing, must conductive effect be improved.From the angle of technology, these methods can promote photovoltaic efficiency a little.But the return that the ag material cost of required input can be earned far above improved efficiency, has no to be benefited to industry.Consider from the angle of production cost, crystal silicon and silver slurry are the most expensive bi-materials, and can realize improving battery efficiency and need not increasing production cost, be under the market environment that current profit margin is narrow and small, the technical problem that photovoltaic industry is urgently to be resolved hurrily.
Summary of the invention
In view of the deficiency that prior art exists, the invention provides a kind of preparation method without main grid welding for solar cell, this preparation method with copper cash and hot melt adhesive film for material, prepare without main grid welding by heat pressing process, be applied in the solar cell without main grid, the requirement that shading can meet again conduction less simultaneously can be met; The technical process of its preparation method is simple, meets the technical problem reducing material cost, also simplify the complicated technology simultaneously realizing high photovoltaic efficiency battery structure and the low shading electrode structure of high conductivity in manufacture of solar cells flow process at silicon chip surface.
To achieve these goals, present invention employs following technical scheme:
For the preparation method without main grid welding of solar cell, the method comprises: release many copper cash by copper cash pay off rack and be transported in hot-press arrangement, and described many copper cash are located in the same horizontal plane and are arranged mutually parallel; The first hot melt adhesive film and the second hot melt adhesive film is released respectively by the first unreeling structure and the second unreeling structure, described first hot melt adhesive film is formed multiple first PUR diaphragm by the first cutter sweep cutting, and described second hot melt adhesive film is formed multiple second PUR diaphragm by the second cutter sweep cutting; Wherein, described first PUR diaphragm and the second PUR diaphragm are alternately transported in hot-press arrangement successively mutually by the first conveyer and the second conveyer respectively, described first PUR diaphragm is positioned at the top of described many copper cash, described second PUR diaphragm is positioned at the below of described many copper cash, further, described first PUR diaphragm and the second PUR diaphragm have a spacing distance in the conveying direction; By hot-press arrangement by described many copper cash and described first PUR diaphragm and the second PUR diaphragm hot binding respectively; Rolling action is done by the described many copper cash after rolling-up mechanism pair and the first PUR diaphragm and the second PUR diaphragm hot binding.
Wherein, described many copper cash are equally arranged mutually parallel, and the spacing between adjacent two copper cash is 6 ~ 10mm.
Wherein, the laying tension of copper cash described in each is regulated separately by described copper cash pay off rack, and the scope of laying tension is 5 ~ 50N.
Wherein, described first unreeling structure and the second unreeling structure adopt the mode of linear velocity constant to release the first hot melt adhesive film and the second hot melt adhesive film respectively.
Wherein, the linear velocity scope that described first unreeling structure releases the first hot melt adhesive film is 5 ~ 10m/min, and the linear velocity scope that described second unreeling structure releases the second hot melt adhesive film is 5 ~ 10m/min.
Wherein, described first unreeling structure is identical with the linear velocity of described second unreeling structure.
Wherein, described first PUR diaphragm and the second PUR diaphragm spacing distance are in the conveying direction 2 ~ 3mm.
Wherein, described copper cash is tinned wird, and described first hot melt adhesive film and the second hot melt adhesive film are respectively PO glued membrane.
Wherein, the wire diameter of described copper cash is 0.2 ~ 0.3mm, and the thickness of described first hot melt adhesive film and the second hot melt adhesive film is respectively 0.09 ~ 0.11mm.
Wherein, the length of described first PUR diaphragm is identical with width, and the length of described second PUR diaphragm is identical with width.
A kind of preparation method without main grid welding for solar cell that the embodiment of the present invention provides, this preparation method with copper cash and hot melt adhesive film for material, prepare without main grid welding by heat pressing process, be applied in the solar cell without main grid, the requirement that shading can meet again conduction less simultaneously can be met; The technical process of its preparation method is simple, meets the technical problem reducing material cost, also simplify the complicated technology simultaneously realizing high photovoltaic efficiency battery structure and the low shading electrode structure of high conductivity in manufacture of solar cells flow process at silicon chip surface.
Accompanying drawing explanation
Fig. 1 is the process chart of the preparation method without main grid welding that the embodiment of the present invention provides;
Fig. 2 is the graphical representation of exemplary of the process of the preparation method without main grid welding that the embodiment of the present invention provides;
Fig. 3 is the structural representation without main grid welding that the embodiment of the present invention provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.The example of these preferred implementations illustrates in the accompanying drawings.Shown in accompanying drawing and the embodiments of the present invention described with reference to the accompanying drawings be only exemplary, and the present invention is not limited to these execution modes.
At this, also it should be noted that, in order to avoid the present invention fuzzy because of unnecessary details, illustrate only in the accompanying drawings with according to the closely-related structure of the solution of the present invention and/or treatment step, and eliminate other details little with relation of the present invention.
Present embodiments provide a kind of preparation method without main grid welding for solar cell.Consult Fig. 1 and composition graphs 2 and Fig. 3, the method comprises the following steps:
S101, release many copper cash be transported in hot-press arrangement by copper cash pay off rack, described many copper cash are located in the same horizontal plane and are arranged mutually parallel.Particularly, as shown in Figure 2, copper cash pay off rack 1 is released many copper cash 10 and is transported in hot-press arrangement 2, and the laying tension of each copper cash 10 can be regulated separately by copper cash pay off rack 1, and the scope of laying tension can be 5 ~ 50N.Normally, as shown in Figure 3, many copper cash 10 are equally arranged mutually parallel, and the spacing d1 between adjacent two copper cash 10 can be chosen as 6 ~ 10mm.In the present embodiment, spacing d1 is set as 8mm.Copper cash 10 quantity mainly sets according to the width of welding to be prepared and spacing d1.Being provided with line comb in copper cash pay off rack 1, can adjusting by adjusting line comb the size obtaining spacing d1.
S102, multiple first PUR diaphragm and multiple second PUR diaphragm is provided to be transported in hot-press arrangement respectively by the first unreeling structure and the second unreeling structure.Particularly, as shown in Figure 2 and consult Fig. 3, the first hot melt adhesive film 21 is released by the first unreeling structure 3a, first hot melt adhesive film 21 is cut by the first cutter sweep 4a and forms multiple first PUR diaphragm 21a, and multiple first PUR diaphragm 21a is transported in hot-press arrangement 2 by the first conveyer 5a successively; Similarly, the second hot melt adhesive film 22 is released by the second unreeling structure 3b, second hot melt adhesive film 22 is cut by the second cutter sweep 4b and forms multiple second PUR diaphragm 22a, and multiple second PUR diaphragm 22a is transported in hot-press arrangement 2 successively by the second conveyer 5b.Further, described first PUR diaphragm 21a and the second PUR diaphragm 22a is alternately transported in hot-press arrangement 2 by the first conveyer 5a and the second conveyer 5b respectively successively mutually, described first PUR diaphragm 21a is transported to the top of described many copper cash 10, described second PUR diaphragm 22a is transported to the below of described many copper cash 10, further, described first PUR diaphragm 21a and the second PUR diaphragm 22a has a spacing distance d2 in the conveying direction.
S103, by hot-press arrangement by described many copper cash and the first PUR diaphragm and the second PUR diaphragm hot binding respectively.Particularly, consult Fig. 2 and Fig. 3, after copper cash 10, first PUR diaphragm 21a and the second hot melt adhesive film 22a is transported to hot-press arrangement 2 respectively, hot-press arrangement 2 is by copper cash 10, first PUR diaphragm 21a and the second hot melt adhesive film 22a hot binding, form welding, Fig. 3 is the structural representation without main grid welding that hot binding obtains, and in figure, the part of dotted line represents that the first PUR diaphragm 21a is positioned at the top of copper cash 10.
S104, do rolling action by the described many copper cash after rolling-up mechanism pair and the first PUR diaphragm and the second PUR diaphragm hot binding.Particularly, consult Fig. 2 and Fig. 3, step S103 hot binding obtain without main grid welding after, by rolling-up mechanism 6 do rolling action reclaim finished product.
Wherein, in step S102, described first unreeling structure 3a and the second unreeling structure 3b adopts the mode of linear velocity constant to release the first hot melt adhesive film 21 and the second hot melt adhesive film 22 respectively.The linear velocity scope that described first unreeling structure 3a releases the first hot melt adhesive film 21 can be 5 ~ 10m/min, and the linear velocity scope that described second unreeling structure 3b releases the second hot melt adhesive film 22 can be 5 ~ 10m/min.Preferably, described first unreeling structure 3a is identical with the linear velocity of described second unreeling structure 3b.
Wherein, consult Fig. 2, described first PUR diaphragm 21a and the second PUR diaphragm 22a spacing distance d2 in the conveying direction can be 2 ~ 3mm.As shown in Figure 3, hot binding obtain without in main grid welding, between the first PUR diaphragm 21a and the second PUR diaphragm 22a, there is spacing distance d2, facilitate butt welding band to carry out cutting in use.
Wherein, the copper cash 10 used in the present embodiment is tinned wird, and wire diameter can be 0.2 ~ 0.3mm.Described first hot melt adhesive film 21 and the second hot melt adhesive film 22 are respectively PO (polyolefin, polyolefin) glued membrane, and the thickness of described first hot melt adhesive film 21 and the second hot melt adhesive film 22 is respectively 0.09 ~ 0.11mm.
In the present embodiment, consult Fig. 3, the width of the first hot melt adhesive film 21 is D1, and after the first hot melt adhesive film 21 is cut the multiple first PUR diaphragm 21a of formation by the first cutter sweep 4a, the width of the first PUR diaphragm 21a is also D1, and length is L1.The width of the second hot melt adhesive film 22 is D2, and after the second hot melt adhesive film 22 is cut the multiple second PUR diaphragm 22a of formation by the second cutter sweep 4b, the width after the second PUR diaphragm 22a is also D2, and length is L2.Normally D1=D2, and set L1=D1, L2=D2.
A kind of preparation method without main grid welding for solar cell that the embodiment of the present invention provides, this preparation method with copper cash and hot melt adhesive film for material, prepare without main grid welding by heat pressing process, be applied in the solar cell without main grid, the requirement that shading can meet again conduction less simultaneously can be met; The technical process of its preparation method is simple, meets the technical problem reducing material cost, also simplify the complicated technology simultaneously realizing high photovoltaic efficiency battery structure and the low shading electrode structure of high conductivity in manufacture of solar cells flow process at silicon chip surface.Further, in the technique of the method, the both sides that the first PUR diaphragm and the second PUR diaphragm are positioned at copper cash are set, in being crisscross arranged, one-sided compared to glued membrane is placed on, can effectively avoid copper cash to break, operating efficiency is provided, reduce costs.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of the application.
Claims (10)
1., for the preparation method without main grid welding of solar cell, it is characterized in that, the method comprises:
Releasing many copper cash by copper cash pay off rack is transported in hot-press arrangement, and described many copper cash are located in the same horizontal plane and are arranged mutually parallel;
The first hot melt adhesive film and the second hot melt adhesive film is released respectively by the first unreeling structure and the second unreeling structure, described first hot melt adhesive film is formed multiple first PUR diaphragm by the first cutter sweep cutting, and described second hot melt adhesive film is formed multiple second PUR diaphragm by the second cutter sweep cutting; Wherein, described first PUR diaphragm and the second PUR diaphragm are alternately transported in hot-press arrangement successively mutually by the first conveyer and the second conveyer respectively, described first PUR diaphragm is positioned at the top of described many copper cash, described second PUR diaphragm is positioned at the below of described many copper cash, further, described first PUR diaphragm and the second PUR diaphragm have a spacing distance in the conveying direction;
By hot-press arrangement by described many copper cash and described first PUR diaphragm and the second PUR diaphragm hot binding respectively;
Rolling action is done by the described many copper cash after rolling-up mechanism pair and the first PUR diaphragm and the second PUR diaphragm hot binding.
2. the preparation method without main grid welding for solar cell according to claim 1, is characterized in that, described many copper cash are equally arranged mutually parallel, and the spacing between adjacent two copper cash is 6 ~ 10mm.
3. the preparation method without main grid welding for solar cell according to claim 2, is characterized in that, the laying tension of copper cash described in each is regulated separately by described copper cash pay off rack, and the scope of laying tension is 5 ~ 50N.
4. the preparation method without main grid welding for solar cell according to claim 1, is characterized in that, described first unreeling structure and the second unreeling structure adopt the mode of linear velocity constant to release the first hot melt adhesive film and the second hot melt adhesive film respectively.
5. the preparation method without main grid welding for solar cell according to claim 4, it is characterized in that, the linear velocity scope that described first unreeling structure releases the first hot melt adhesive film is 5 ~ 10m/min, and the linear velocity scope that described second unreeling structure releases the second hot melt adhesive film is 5 ~ 10m/min.
6. the preparation method without main grid welding for solar cell according to claim 5, is characterized in that, described first unreeling structure is identical with the linear velocity of described second unreeling structure.
7., according to the arbitrary described preparation method without main grid welding for solar cell of claim 1-6, it is characterized in that, described first PUR diaphragm and the second PUR diaphragm spacing distance are in the conveying direction 2 ~ 3mm.
8. the preparation method without main grid welding for solar cell according to claim 7, is characterized in that, described copper cash is tinned wird, and described first hot melt adhesive film and the second hot melt adhesive film are respectively PO glued membrane.
9. the preparation method without main grid welding for solar cell according to claim 7, is characterized in that, the wire diameter of described copper cash is 0.2 ~ 0.3mm, and the thickness of described first hot melt adhesive film and the second hot melt adhesive film is respectively 0.09 ~ 0.11mm.
10. the preparation method without main grid welding for solar cell according to claim 7, is characterized in that, the length of described first PUR diaphragm is identical with width, and the length of described second PUR diaphragm is identical with width.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510933299.0A CN105576046B (en) | 2015-12-15 | 2015-12-15 | A kind of preparation method without main grid welding for solar cell |
| PCT/CN2016/089966 WO2017101435A1 (en) | 2015-12-15 | 2016-07-14 | Method for making main-grid-free welding strip for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510933299.0A CN105576046B (en) | 2015-12-15 | 2015-12-15 | A kind of preparation method without main grid welding for solar cell |
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| Publication Number | Publication Date |
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| CN105576046A true CN105576046A (en) | 2016-05-11 |
| CN105576046B CN105576046B (en) | 2017-08-11 |
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| CN201510933299.0A Active CN105576046B (en) | 2015-12-15 | 2015-12-15 | A kind of preparation method without main grid welding for solar cell |
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| CN (1) | CN105576046B (en) |
| WO (1) | WO2017101435A1 (en) |
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| WO2017101435A1 (en) * | 2015-12-15 | 2017-06-22 | 王能青 | Method for making main-grid-free welding strip for solar cell |
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| US20090025788A1 (en) * | 2002-08-29 | 2009-01-29 | Day4 Energy, Inc. | Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module |
| US20100275976A1 (en) * | 2007-12-18 | 2010-11-04 | Day4 Energy Inc. | Photovoltaic module with edge access to pv strings, interconnection method, apparatus, and system |
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| WO2017101435A1 (en) * | 2015-12-15 | 2017-06-22 | 王能青 | Method for making main-grid-free welding strip for solar cell |
| CN106393815A (en) * | 2016-08-31 | 2017-02-15 | 西安泰力松新材料股份有限公司 | Metallic wire/film laminating machine and control device and method thereof |
| CN106393815B (en) * | 2016-08-31 | 2018-04-06 | 西安泰力松新材料股份有限公司 | A kind of wire/film compounding machine and its control device and method |
| CN110165022A (en) * | 2019-06-06 | 2019-08-23 | 苏州迈展自动化科技有限公司 | A kind of Preparation equipment of solar battery metal wire film |
| CN110246929A (en) * | 2019-06-06 | 2019-09-17 | 苏州迈展自动化科技有限公司 | A kind of solar photovoltaic assembly hot link process |
| CN110277474A (en) * | 2019-06-06 | 2019-09-24 | 苏州迈展自动化科技有限公司 | A kind of preparation method of solar battery metal wire film |
| CN110277474B (en) * | 2019-06-06 | 2021-12-07 | 苏州迈展自动化科技有限公司 | Preparation method of metal wire film of solar cell |
| CN112349805A (en) * | 2019-08-08 | 2021-02-09 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module preparation method |
| WO2022057138A1 (en) * | 2020-09-18 | 2022-03-24 | 苏州赛伍应用技术股份有限公司 | Solder strip carrier film, solder strip composite, and battery piece composite |
| CN112226169A (en) * | 2020-09-25 | 2021-01-15 | 苏州赛伍应用技术股份有限公司 | Solder strip carrier film, preparation method thereof, solder strip composite body and battery piece composite body |
| CN112226169B (en) * | 2020-09-25 | 2022-11-18 | 苏州赛伍应用技术股份有限公司 | Solder strip carrier film, preparation method thereof, solder strip composite body and battery piece composite body |
| CN115352939A (en) * | 2022-10-19 | 2022-11-18 | 常州盛沅新材料科技有限公司 | Packaging film winding and unwinding device |
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| Publication number | Publication date |
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| CN105576046B (en) | 2017-08-11 |
| WO2017101435A1 (en) | 2017-06-22 |
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Effective date of registration: 20220818 Address after: No. 43, Wusi West Road, Chengxi District, Xining City, Qinghai Province 810007 Patentee after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: State Power Investment Group Qinghai Photovoltaic Industry Innovation Center Co.,Ltd. Patentee after: YELLOW RIVER HYDROPOWER PHOTOVOLTAIC INDUSTRY TECHNOLOGY Co.,Ltd. Address before: 810007 No. 20, Kunlun East Road, Xining City, Qinghai Province Patentee before: YELLOW RIVER HYDROPOWER PHOTOVOLTAIC INDUSTRY TECHNOLOGY Co.,Ltd. |