CN105575974A - 低温多晶硅tft背板的制作方法 - Google Patents
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- 150000002500 ions Chemical class 0.000 claims abstract description 44
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- -1 boron ion Chemical class 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
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- 150000004767 nitrides Chemical class 0.000 claims description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000004411 aluminium Substances 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
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Abstract
本发明提供一种低温多晶硅TFT背板的制作方法,通过在非晶硅层(3’)对应欲形成TFT沟道区的区域上形成光阻图案(4),以所述光阻图案(4)为遮蔽层,向非晶硅层(3’)植入高剂量的掺杂离子,在非晶硅层(3’)对应欲形成TFT沟道区的区域内形成多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块(31),然后再进行快速热退火处理,使非晶硅层(3’)转变为多晶层(3),能够使得非晶硅层(3’)对应欲形成TFT沟道区的区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块(31)为晶核进行侧向结晶,从而能够改善多晶硅层的晶粒大小,减少晶界数量,提高晶粒质量,提高TFT的电性。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种低温多晶硅TFT背板的制作方法。
背景技术
在显示技术领域,液晶显示器(LiquidCrystalDisplay,LCD)与有机发光二极管显示器(OrganicLightEmittingDiode,OLED)等平板显示技术已经逐步取代CRT显示器。其中,OLED具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽,可实现柔性显示与大面积全色显示等诸多优点,被业界公认为是最有发展潜力的显示装置。
OLED按照驱动类型可分为无源OLED(PMOLED)和有源OLED(AMOLED)。低温多晶硅(LowTemperaturePoly-Silicon,LTPS)薄膜晶体管(ThinFilmTransistor,TFT)在高分辨AMOLED技术中得到了业界的重视,有很大的应用价值和潜力。与非晶硅(a-Si)相比,LTPSTFT具有较高的载流子迁移率,器件反应速度快,稳定性好,可以满足高分辨率AMOLED显示器的要求。
低温多晶硅是多晶硅(poly-Si)技术的一个分支。多晶硅材料具有较高的电子迁移率源于多晶硅自身的多晶体结构,与高缺陷密度及高度无序的非晶硅相比,多晶硅是由多个有序晶粒构成。现有技术中,低温多晶硅一般通过将非晶硅经过不同的退火处理使其晶化得到,常用的方法有:固相晶化(SolidPhaseCrystallization,SPC)、金属诱导晶化(Metal-InducedCrystallization,MIC)、准分子激光退火晶化(ExcimerLaserAnnealing,ELA)、快速热退火处理(RapidThermalAnnealing,RTA)等。
现有技术中,常见的适用于AMOLED的低温多晶硅TFT背板的结构如图1所示。该低温多晶硅TFT背板的制作过程大体为:首先在玻璃基板100上依次沉积缓冲层200、与非晶硅层,接着向非晶硅层整面植入高剂量的掺杂离子,再通过快速热退火处理对非晶硅进行诱导结晶,使非晶硅层转变为多晶硅层300,然后对多晶硅层300进行图案化处理,后续依次制作栅极绝缘层400、栅极500、蚀刻阻挡层600、源极710与漏极720、平坦层800、像素电极层900、像素定义层1000、及光阻间隙物层1100。其中,向非晶硅层整面植入高剂量的掺杂离子,再通过快速热退火处理对非晶硅进行诱导结晶的方式会导致多晶硅层300的晶粒多、晶界多、晶粒质量不好,从而影响TFT的电性。
发明内容
本发明的目的在于提供一种低温多晶硅TFT背板的制作方法,能够改善多晶硅层的晶粒大小,减少晶界数量,提高晶粒质量,从而提高TFT的电性。
为实现上述目的,本发明提供一种低温多晶硅TFT背板的制作方法,包括如下步骤:
步骤1、提供一基板,依次在所述基板上沉积缓冲层、与非晶硅层;
步骤2、在所述非晶硅层上涂布一层光阻,并对该层光阻进行黄光制程,在非晶硅层对应欲形成TFT沟道区的区域上形成光阻图案;
步骤3、以所述光阻图案为遮蔽层,向非晶硅层植入高剂量的掺杂离子,在非晶硅层对应欲形成TFT沟道区的区域内形成多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块;
步骤4、先去除所述光阻图案,再进行快速热退火处理,使非晶硅层转变为多晶层,其中非晶硅层对应欲形成TFT沟道区的区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块为晶核进行侧向结晶;
步骤5、对所述多晶层进行图案化处理,形成第一多晶硅段、第二多晶硅段,所述第一多晶硅段包括所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块;
步骤6、在所述第一多晶硅段、第二多晶硅段、与缓冲层上沉积栅极绝缘层;
步骤7、在所述栅极绝缘层上沉积并图案化第一金属层,形成栅极、与金属电极;所述金属电极与第二多晶硅段构成存储电容;
步骤8、在所述栅极、金属电极、与栅极绝缘层上沉积并图案化蚀刻阻挡层,形成分别暴露出所述第一多晶硅段两端部分表面的第一过孔、与第二过孔;
步骤9、在所述蚀刻阻挡层上沉积并图案化第二金属层,形成源极、与漏极,所述源极、与漏极分别经由第一过孔、与第二过孔接触第一多晶硅段;
所述源极、漏极、栅极、与第一多晶硅段构成TFT。
所述低温多晶硅TFT背板的制作方法还包括步骤10、在所述源极、漏极、与蚀刻阻挡层上依次制作平坦层、像素电极层、像素定义层、及光阻间隙物层;所述像素电极经由贯穿所述平坦层的第三过孔接触所述漏极。
可选的,所述步骤3中高剂量的掺杂离子为硼离子,所述离子重掺杂区块为P型重掺杂区块,所述TFT为P型TFT。
可选的,所述步骤3中高剂量的掺杂离子为磷离子,所述离子重掺杂区块为N型重掺杂区块,所述TFT为N型TFT。
所述离子重掺杂区块的形状为矩形。
所述缓冲层与蚀刻阻挡层的材料均为SiOx、SiNx、或二者的组合。
所述第一金属层与第二金属层的材料均为Mo、Ti、Al、Cu中的一种或几种的堆栈组合。
所述像素电极层的材料为ITO/Ag/ITO。
本发明的有益效果:本发明提供的一种低温多晶硅TFT背板的制作方法,通过在非晶硅层对应欲形成TFT沟道区的区域上形成光阻图案,以所述光阻图案为遮蔽层,向非晶硅层植入高剂量的掺杂离子,在非晶硅层对应欲形成TFT沟道区的区域内形成多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块,然后再进行快速热退火处理,使非晶硅层转变为多晶层,能够使得非晶硅层对应欲形成TFT沟道区的区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块为晶核进行侧向结晶,从而能够改善多晶硅层的晶粒大小,减少晶界数量,提高晶粒质量,提高TFT的电性。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为现有的适用于AMOLED的低温多晶硅TFT背板的结构的剖面示意图;
图2为本发明的低温多晶硅TFT背板的制作方法的流程图;
图3为本发明的低温多晶硅TFT背板的制作方法步骤1的示意图;
图4为本发明的低温多晶硅TFT背板的制作方法步骤2的示意图;
图5为对应于图4中光阻图案的平面俯视示意图;
图6为本发明的低温多晶硅TFT背板的制作方法步骤3的示意图;
图7为对应于图6中多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块的平面俯视示意图;
图8为本发明的低温多晶硅TFT背板的制作方法步骤4的示意图;
图9为本发明的低温多晶硅TFT背板的制作方法步骤5的示意图;
图10为对应于图9中第一多晶硅段的平面俯视示意图;
图11为本发明的低温多晶硅TFT背板的制作方法步骤6的示意图;
图12为本发明的低温多晶硅TFT背板的制作方法步骤7的示意图;
图13为本发明的低温多晶硅TFT背板的制作方法步骤8的示意图;
图14为本发明的低温多晶硅TFT背板的制作方法步骤9的示意图;
图15为本发明的低温多晶硅TFT背板的制作方法步骤10的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2,本发明提供一种低温多晶硅TFT背板的制作方法,包括如下步骤:
步骤1、如图3所示,提供一基板1,依次在所述基板1上沉积缓冲层2、与非晶硅层3’。
具体地,所述基板1优选为玻璃基板。
所述缓冲层2的材料为氧化硅(SiOx)、氮化硅(SiNx)、或二者的组合。
步骤2、如图4所示,在所述非晶硅层3’上涂布一层光阻,并对该层光阻进行黄光制程,在非晶硅层3’对应欲形成TFT沟道区的区域上形成光阻图案4。
具体地,如图5所示,所述光阻图案4包括多条沿水平方向平行设置且相互间隔的横部41、及多条沿竖直方向平行设置且相互间隔的竖部42,所述多条横部41与多条竖部42垂直交错出多个呈阵列式排布、相互间隔、呈矩形的镂空部43。
步骤3、如图6、图7所示,以所述光阻图案4为遮蔽层,向非晶硅层3’植入高剂量的掺杂离子,由于所述光阻图案4的多条横部41与多条竖部42垂直交错出多个呈阵列式排布、相互间隔、呈矩形的镂空部43,透过所述多个镂空部43在非晶硅层3’对应欲形成TFT沟道区的区域内形成多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块31。
当然,所述离子重掺杂区块31的形状与镂空部43的形状一致,亦呈矩形。
可选的,该步骤3中高剂量的掺杂离子为硼(B)离子,所述离子重掺杂区块31为P型重掺杂区块;或者该步骤3中高剂量的掺杂离子为磷(P)离子,所述离子重掺杂区块31为N型重掺杂区块。
步骤4、如图8所示,先去除所述光阻图案4,再进行快速热退火处理,使非晶硅层3’转变为多晶层3,其中非晶硅层3’对应欲形成TFT沟道区的区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块31为晶核进行侧向结晶,能够使得多晶硅的晶粒大小得以改善,减少晶界数量,提高晶粒质量。
步骤5、如图9、图10所示,对所述多晶层3进行图案化处理,形成第一多晶硅段33、第二多晶硅段35,所述第一多晶硅段33包括所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块31。
步骤6、如图11所示,在所述第一多晶硅段33、第二多晶硅段35、与缓冲层2上沉积栅极绝缘层5。
步骤7、如图12所示,在所述栅极绝缘层5上沉积并图案化第一金属层,形成栅极61、与金属电极62;所述金属电极62与第二多晶硅段35构成存储电容C。
具体地,所述第一金属层的材料为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或几种的堆栈组合。
步骤8、如图13所示,在所述栅极61、金属电极62、与栅极绝缘层5上沉积并图案化蚀刻阻挡层7,形成分别暴露出所述第一多晶硅段33两端部分表面的第一过孔71、与第二过孔72。
具体地,所述蚀刻阻挡层7的材料为材料均为SiOx、SiNx、或二者的组合。
步骤9、如图14所示,在所述蚀刻阻挡层7上沉积并图案化第二金属层,形成源极81、与漏极82,所述源极81、与漏极82分别经由第一过孔71、与第二过孔72接触第一多晶硅段33。
所述源极81、漏极82、栅极61、与第一多晶硅段33构成TFTT。
具体地,所述第二金属层的材料为Mo、Ti、Al、Cu中的一种或几种的堆栈组合。
若上述步骤3中的高剂量的掺杂离子为硼离子,则所述TFTT为P型TFT;若上述步骤3中的高剂量的掺杂离子为磷离子,则所述TFTT为N型TFT。由于TFT沟道区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块31为晶核进行侧向结晶,多晶硅的晶粒大小得以改善,减少了晶界数量,提高了晶粒质量,从而该TFTT的电性也随之得到提高。
以及步骤10、如图15所示,在所述源极81、漏极82、与蚀刻阻挡层7上依次制作平坦层9、像素电极层10、像素定义层11、及光阻间隙物层12;所述像素电极12经由贯穿所述平坦层9的第三过孔91接触所述漏极82。
具体地,所述像素电极层10的材料为氧化铟锡/银/氧化铟锡(ITO/Ag/ITO)。
综上所述,本发明的低温多晶硅TFT背板的制作方法,通过在非晶硅层对应欲形成TFT沟道区的区域上形成光阻图案,以所述光阻图案为遮蔽层,向非晶硅层植入高剂量的掺杂离子,在非晶硅层对应欲形成TFT沟道区的区域内形成多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块,然后再进行快速热退火处理,使非晶硅层转变为多晶层,能够使得非晶硅层对应欲形成TFT沟道区的区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块为晶核进行侧向结晶,从而能够改善多晶硅层的晶粒大小,减少晶界数量,提高晶粒质量,提高TFT的电性。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (8)
1.一种低温多晶硅TFT背板的制作方法,其特征在于,包括如下步骤:
步骤1、提供一基板(1),依次在所述基板(1)上沉积缓冲层(2)、与非晶硅层(3’);
步骤2、在所述非晶硅层(3’)上涂布一层光阻,并对该层光阻进行黄光制程,在非晶硅层(3’)对应欲形成TFT沟道区的区域上形成光阻图案(4);
步骤3、以所述光阻图案(4)为遮蔽层,向非晶硅层(3’)植入高剂量的掺杂离子,在非晶硅层(3’)对应欲形成TFT沟道区的区域内形成多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块(31);
步骤4、先去除所述光阻图案(4),再进行快速热退火处理,使非晶硅层(3’)转变为多晶层(3),其中非晶硅层(3’)对应欲形成TFT沟道区的区域以所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块(31)为晶核进行侧向结晶;
步骤5、对所述多晶层(3)进行图案化处理,形成第一多晶硅段(33)、第二多晶硅段(35),所述第一多晶硅段(33)包括所述多个呈阵列式排布、相互间隔、且形状规则的离子重掺杂区块(31);
步骤6、在所述第一多晶硅段(33)、第二多晶硅段(35)、与缓冲层(2)上沉积栅极绝缘层(5);
步骤7、在所述栅极绝缘层(5)上沉积并图案化第一金属层,形成栅极(61)、与金属电极(62);所述金属电极(62)与第二多晶硅段(35)构成存储电容(C);
步骤8、在所述栅极(61)、金属电极(62)、与栅极绝缘层(5)上沉积并图案化蚀刻阻挡层(7),形成分别暴露出所述第一多晶硅段(33)两端部分表面的第一过孔(71)、与第二过孔(72);
步骤9、在所述蚀刻阻挡层(7)上沉积并图案化第二金属层,形成源极(81)、与漏极(82),所述源极(81)、与漏极(82)分别经由第一过孔(71)、与第二过孔(72)接触第一多晶硅段(33);
所述源极(81)、漏极(82)、栅极(61)、与第一多晶硅段(33)构成TFT(T)。
2.如权利要求1所述的低温多晶硅TFT背板的制作方法,其特征在于,还包括步骤10、在所述源极(81)、漏极(82)、与蚀刻阻挡层(7)上依次制作平坦层(9)、像素电极层(10)、像素定义层(11)、及光阻间隙物层(12);所述像素电极(12)经由贯穿所述平坦层(9)的第三过孔(91)接触所述漏极(82)。
3.如权利要求1所述的低温多晶硅TFT背板的制作方法,其特征在于,所述步骤3中高剂量的掺杂离子为硼离子,所述离子重掺杂区块(31)为P型重掺杂区块,所述TFT(T)为P型TFT。
4.如权利要求1所述的低温多晶硅TFT背板的制作方法,其特征在于,所述步骤3中高剂量的掺杂离子为磷离子,所述离子重掺杂区块(31)为N型重掺杂区块,所述TFT(T)为N型TFT。
5.如权利要求1所述的低温多晶硅TFT背板的制作方法,其特征在于,所述离子重掺杂区块(31)的形状为矩形。
6.如权利要求1所述的低温多晶硅TFT背板的制作方法,其特征在于,所述缓冲层(2)与蚀刻阻挡层(7)的材料均为SiOx、SiNx、或二者的组合。
7.如权利要求1所述的低温多晶硅TFT背板的制作方法,其特征在于,所述第一金属层与第二金属层的材料均为Mo、Ti、Al、Cu中的一种或几种的堆栈组合。
8.如权利要求2所述的低温多晶硅TFT背板的制作方法,其特征在于,所述像素电极层(10)的材料为ITO/Ag/ITO。
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