CN105575831B - A kind of method for the external electrode for making electronic component - Google Patents
A kind of method for the external electrode for making electronic component Download PDFInfo
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- CN105575831B CN105575831B CN201510967450.2A CN201510967450A CN105575831B CN 105575831 B CN105575831 B CN 105575831B CN 201510967450 A CN201510967450 A CN 201510967450A CN 105575831 B CN105575831 B CN 105575831B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract
The invention discloses a kind of method for the external electrode for making electronic component, comprise the following steps：S1, plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, on electronic component surface, deposition generates uniform SiOx film layers, electronic component surface is set to obtain certain hydrophobic performance, the electronic component especially multi-terminal chip components and parts；S2, to electronic component coating electrode slurry to form external electrode.A kind of surface treatment method of electronic component is also disclosed herein.This method may be such that the external electrode of component coating is straight, smooth, no fish maw, burr.
Description
Technical field
The present invention relates to a kind of method for the external electrode for making electronic component.
Background technology
In recent years, the application with microelectronic circuit surface mounting technology (SMT) and constantly improve, it is light, thin, short, small into
To weigh the important symbol of electronic system product, and to make electronics miniaturization, first have to consider the small-sized of electronic component
Change.After electronic component miniaturization, product it is also proposed new height to precision, the appearance requirement of external electrode.Component size
After miniaturization, termination electrode size, spacing are also less and less, particularly the multi-terminal chip member device such as wave filter, magnetic bead row, pressure-sensitive row
Part, a termination need to go up multiple electrodes, as external electrode precision, grazing do not reach requirement, the formed fish of electrode sagging, diffusion
Tripe, burr can cause chip components and parts outward appearance and electrically it is bad.Multi-terminal chip components and parts external electrode is typically with plastic roller
The physics modes such as extruding, coating are formed in product surface coating electrode slurry, because product surface is in hydrophily, and electrode slurry
Belong to hydrophily semifluid so that electrode slurry is easily soaked in product surface, spread, sagging, and external electrode can be formed after curing molding
Fish maw, burr shape bad order.Can be caused when external electrode fish maw, burr shape are serious adjacent electrode connect and it is short-circuit.Fish maw, hair
Thorn-like electrode can produce point discharge effect in electroplating process, cause coating too fast to magnet extension and occur climbing plating outward appearance not
Good, two adjacent external electrodes link together so as to cause product poor short circuit when serious；Fish maw, burr shape electrode can cause simultaneously
The increase of product stray capacitance, and then influence product other Electrical Indexes.
As shown in figure 1, as defined in multi-terminal chip components and parts 1 when being coated with external electrode, typically dig out on plastic roller 2
Groove 3, plastic roller is sticked electrode slurry 4 and again struck off plastic roller surface size by scraper 5, only plastic roller groove position
Put and stick slurry, then rolled by plastic roller, extrude the full formula component of multiterminal sub-pieces, electrode slurry is coated on exposed draw
Go out electrode area, electrode slurry is then obtained the complete covering of multi-terminal chip components and parts extraction electrode by drying, high temperature sintering
To be firmly combined with magnet, fine and close external electrode.
Multi-terminal chip components and parts idiosome surface hydrophilic ability is generally relatively strong, and material is hydrophilic fluid by electrode, if
Directly implement coating, then electrode slurry is easily soaked on multi-terminal chip components and parts surface, spread, sagging, can form fish maw shape
The external electrode 7 of external electrode 6 or burr shape, as shown in Figure 2.
Traditionally result of the above problems has following two：
1st, by improving slurry thixotropic index, viscosity, adjust painting parameter, take a significant amount of time with material resources cost, not only
Effect is not notable and uniformity, poor reproducibility；
2nd, hydrophobically modified processing is carried out to multi-terminal chip components and parts surface by hydrophobic liquid, makes multi-terminal chip components and parts
Surface Creation hydrophobic film layer possesses hydrophobic property, reduces electrode slurry in product surface wetting, diffusion, sagging degree, reaches and change
Kind external electrode fish maw, burr shape are bad, but the volatile generation penetrating odor of its hydrophobic liquid normal temperature, and dirt is caused to operating environment
Dye, and hydrophobic treatment is unsatisfactory for metric system sized products below 1608.
The content of the invention
It is a primary object of the present invention to overcome the deficiencies in the prior art, there is provided a kind of external electrode for making electronic component
Method, solve multi-terminal chip components and parts external electrode sagging, diffusion problem.In addition, additionally provide a kind of electronic component
Surface treatment method.
To achieve the above object, the present invention uses following technical scheme：
A kind of method for the external electrode for making electronic component, comprises the following steps：
S1, plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, in electronic component
Surface deposition generates uniform SiOx film layers, electronic component surface is obtained certain hydrophobic performance, and the electronic component is outstanding
It is multi-terminal chip components and parts；
S2, to electronic component coating electrode slurry to form external electrode.
Further：
Upon step s 2, the SiOx film layers of product surface deposition are removed by way of sintering.
In step S1, using conveyer belt make electronic component by place target in a vacuum chamber and not with the target
Contact, and monomer HMDSO and the argon gas as carrier are loaded, the target is arranged to -1000~-2600V negative voltage, described
Conveyer belt is arranged to -100~-600V negative voltage, and reacting gas, the reacting gas, the argon gas are passed through in processing procedure
And the monomer HMDSO is ionized in the presence of electric field and is formed plasma, the monomer HMDSO with the height in the plasma
Energy particle encounter, living radical and polymerization Si-O-Si predecessors are formed, it is uniform so as to deposit generation on electronic component surface
SiOx film layers.
The target sets rectangular casing, and the width and height of the casing are 10-40cm, and electronic component is in institute
State and pass through on conveyer belt among the casing.
The length of the casing is arranged as required to, and the casing is set using segmentation or non-segmentation in the longitudinal direction
Put.
The target is made up of any of copper, iron, nickel, tungsten, molybdenum, titanium material.
Metal belt locating shaft is set at target both ends, and conveyer belt and electronic component is in target passage
The heart, electronic component is carried and transported by metal belt.
The reacting gas is any of hydrogen, oxygen, nitrogen.
A kind of surface treatment method of electronic component, comprises the following steps：
Plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, on electronic component surface
Deposition generates uniform SiOx film layers, electronic component surface is obtained certain hydrophobic performance, the electronic component is especially
Multi-terminal chip components and parts.
The plasma modification processing includes：Make electronic component by placing target in a vacuum chamber using conveyer belt
And do not contacted with the target, and monomer HMDSO and the argon gas as carrier being loaded, the target is arranged to -1000~-
2600V negative voltage, the conveyer belt are arranged to -100~-600V negative voltage, and reacting gas is passed through in processing procedure, described
Reacting gas, the argon gas and the monomer HMDSO are ionized in the presence of electric field and are formed plasma, the monomer HMDSO with
High energy particle collision in the plasma, forms living radical and polymerization Si-O-Si predecessors, so as in electronic component
Surface deposition generates uniform SiOx film layers.
Beneficial effects of the present invention：
The processing method of the present invention can solve electronic component especially multi-terminal chip components and parts external electrode sagging, diffusion
It is bad, not only significant effect, pollution-free and easily operated and meet all sized products.Advantages of the present invention is embodied in
Following aspect：
1. can cut bottom solves the fish maw, burr outward appearance that external electrode is formed on multi-terminal slice component device, electrode will not be caused
Slurry product surface soak, diffusion, sagging and form fish maw, burr situation electrode.
2. plasma treatment simply deposits one layer of very thin SiOx film layer in terminal chip component surface, behind outer
Electrode high-temperature sintering process can be completely eliminated, and element following process quality is had no effect, and not influence any spy of product
Property.
3. the method is easily realized and cycle easy to operate short cost is low, need to only increase before terminal chip components and parts are coated with external electrode
Add one of plasma treatment process, termination electrode process increases a set of plasma apparatus, and terminal chip components and parts are in plasma
Worked continuously in equipment by charging, plasma treatment, discharging, discharging can carry out external electrode coating, therefore plasma treatment is set
For that can carry out connecting with external electrode coating machine, realization is worked continuously to improve efficiency.Certain plasma processing parameter setting,
After preservation, only need to transfer corresponding program without frequently modification parameter, equipment operation, process maintenance are very easy.
Brief description of the drawings
Fig. 1 is the process schematic that multi-terminal chip components and parts are coated with external electrode.
Fig. 2 is the product appearance that conventional method multi-terminal chip components and parts are directly coated with external electrode.
Fig. 3 is the product appearance for the multi-terminal chip components and parts external electrode that the embodiment of the present invention makes.
Embodiment
Embodiments of the present invention are elaborated below.It is emphasized that what the description below was merely exemplary,
The scope being not intended to be limiting of the invention and its application.
In one embodiment, a kind of surface treatment method of electronic component, comprises the following steps：
Plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, on electronic component surface
Deposition generates uniform SiOx film layers, electronic component surface is obtained certain hydrophobic performance, the electronic component is especially
Multi-terminal chip components and parts.For SiOx film layers, x therein can be taken not less than 2, the numerical value no more than 4.
In a preferred embodiment, the plasma modification processing includes：Make electronic component by putting using conveyer belt
Put target in a vacuum chamber and do not contacted with the target, and load monomer HMDSO (HMDO) and be used as and carry
The argon gas of body, the target are arranged to -1000~-2600V negative voltage, and the conveyer belt is arranged to the negative of -100~-600V
Voltage, reacting gas, the effect of the reacting gas, the argon gas and the monomer HMDSO in electric field are passed through in processing procedure
Lower ionize forms plasma, and the monomer HMDSO collides with the high energy particle constantly accelerated in the plasma, forms activity certainly
By base and polymerization Si-O-Si predecessors, so as to generate uniform SiOx film layers in electronic component surface deposition.
It is outer being coated with to multi-terminal chip components and parts by the plasma treatment preferably using HMDO as monomer
Plasma modification processing is carried out to its surface before electrode, multi-terminal chip components and parts surface is obtained certain hydrophobic performance, so as to
Significantly reduce silver paste and flow diffusion sprawling degree in component surface so that the external electrode 8 of multi-terminal chip components and parts coating is flat
Directly, it is smooth, no fish maw, burr, as shown in Figure 3.By this processing, without to electrode slurry rheological characteristic, coating process, parameter
Debugging efforts are done, it operates simple and convenient.
In one embodiment, a kind of method for the external electrode for making electronic component, comprises the following steps：
S1, plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, in electronic component
Surface deposition generates uniform SiOx film layers, electronic component surface is obtained certain hydrophobic performance, and the electronic component is outstanding
It is multi-terminal chip components and parts；
S2, to electronic component coating electrode slurry to form external electrode.
In a preferred embodiment, the plasma modification processing includes：Make electronic component by putting using conveyer belt
Put target in a vacuum chamber and do not contacted with the target, and load monomer HMDSO (HMDO) and be used as and carry
The argon gas of body, the target are arranged to -1000~-2600V negative voltage, and the conveyer belt is arranged to the negative of -100~-600V
Voltage, reacting gas, the effect of the reacting gas, the argon gas and the monomer HMDSO in electric field are passed through in processing procedure
Lower ionization forms plasma, and the monomer HMDSO collides with the high energy particle in plasma, forms living radical and polymerization
Si-O-Si predecessors, so as to generate uniform SiOx film layers in electronic component surface deposition.
In a preferred embodiment, according to multi-terminal chip components and parts surface characteristic, applied to multi-terminal chip components and parts
Before cloth external electrode, multi-terminal chip components and parts are positioned on the transmission net band of plasma processing.Load monomer HMDSO
(HMDO), nitrogen, argon gas are passed through, target voltage is set to -2000V；Adjustment power transmission shaft makes transmission guarantor with voltage
Hold -300V.It is passed through reaction nitrogen, the effect of nitrogen, argon gas and monomer HMDSO (HMDO) in metal cabinet electric field
Lower ionization forms plasma, conveyer belt rotating speed of transmission shaft is adjusted, preferably, product can be made continuously to receive in plasma processing region
Plasma treatment 8min.During this, monomer and the high energy particle that constantly accelerates collide, and energy transfer occurs, reach cracking or
Chemical bond rupture, living radical and polymerization Si-O-Si predecessors are formed, so as to be sunk on multi-terminal chip components and parts idiosome surface
The uniform very thin SiOx films of product generation, because SiOx film surfaces can be very low, and its surface composition it is uniform, it is smooth, indeformable, respectively to
General character, possesses higher hydrophobic property, so that electrode slurry infiltrates to each portion in multi-terminal chip components and parts surface, affinity shows
Write decline and it is highly consistent.
Next, external electrode coating can be carried out to multi-terminal chip components and parts by the way of as shown in Figure 1 and equipment.
Because multi-terminal chip components and parts whole surface deposition has one layer of SiOx hydrophobic film layer and it is in hydrophobic character, now upper end electrode applies again
Cloth electrode slurry, as shown in figure 3, at this moment electrode slurry will not be made in multi-terminal chip components and parts moistened surface, diffusion, sagging
The external electrode 8 obtained is straight attractive in appearance, without making external electrode in fish maw, burr shape.
It has been coated with after electrode slurry, the SiOx film layer high temperature that can be deposited product surface by way of termination electrode sintering
Remove.Any change need not be made in pilot process product, there will not be any influence to its performance, it is not required that in other processes
Middle any measure of addition changes to remove caused by it.
Used nitrogen, argon gas and monomer HMDSO (HMDO) raw material, in the market easily obtain, and need not
Do any processing, allocation processing.
Due to need to only increase by one of plasma treatment process before upper end electrode coating electrode slurry, processing mode is simply square
Just, the cycle is short, environment friendly and pollution-free, and less investment is produced effects height.
It is further described below by way of several examples.
Example 1
The method of multi-terminal component surface plasma treatment, comprises the following steps：
Step 1：Prefabricated target
Target is made by rectangular box shape using iron material matter, box width, is highly 40cm, casing length is made as needed
Make or be segmented；
Step 2：Assembling
Multi-terminal chip components and parts are placed into conveyer belt upper surface and among target by without being contacted with target, transmitting
Tape spool is located at target both ends, target is placed in vacuum chamber, target, multi-terminal chip components and parts and conveyer belt are exhausted with vacuum chamber
Edge；
Step 3：Load monomer, ventilation, energization
Monomer HMDSO (HMDO) is loaded, it is carrier to be passed through argon gas, and target is set to negative potential, voltage-
2600V；Conveyer belt is set to keep negative potential, voltage -600V by adjusting power transmission shaft；
Step 4：Plasma treatment
Nitrogen is passed through, nitrogen, argon gas and monomer HMDSO (HMDO) are electric in the presence of metal cabinet electric field
From plasma is formed, monomer and the high energy particle constantly accelerated collide, energy transfer occur, reaches cracking or chemical bond rupture,
Living radical and polymerization Si-O-Si predecessors are formed, so as to uniform in the deposition generation of multi-terminal chip components and parts idiosome surface
Very thin SiOx films.
Example 2
The method of multi-terminal component surface plasma treatment, comprises the following steps：
Step 1：Prefabricated target
Target is made by rectangular box shape using copper material, box width, is highly 10cm, casing length is made as needed
Make or be segmented；
Step 2：Assembling
Multi-terminal chip components and parts are placed into conveyer belt upper surface and among target by without being contacted with target, transmitting
Tape spool is located at target both ends, target is placed in vacuum chamber, target, multi-terminal chip components and parts and conveyer belt are exhausted with vacuum chamber
Edge；
Step 3：Load monomer, ventilation, energization
Monomer HMDSO (HMDO) is loaded, it is carrier to be passed through argon gas, and target is set to negative potential, voltage-
1000V；Conveyer belt is set to keep negative potential, voltage -100V by adjusting power transmission shaft；
Step 4：Plasma treatment
Oxygen is passed through, oxygen, argon gas and monomer HMDSO (HMDO) are electric in the presence of metal cabinet electric field
From plasma is formed, monomer and the high energy particle constantly accelerated collide, energy transfer occur, reaches cracking or chemical bond rupture,
Living radical and polymerization Si-O-Si predecessors are formed, so as to uniform in the deposition generation of multi-terminal chip components and parts idiosome surface
Very thin SiOx films.
Example 3
The method of multi-terminal component surface plasma treatment, comprises the following steps：
Step 1：Prefabricated target
Target is made by rectangular box shape, box width, height 25cm using iron material matter, casing length makes as needed
Or segmentation；
Step 2：Assembling
Multi-terminal chip components and parts are placed into conveyer belt upper surface and among target by without being contacted with target, transmitting
Tape spool is located at target both ends, target is placed in vacuum chamber, target, multi-terminal chip components and parts and conveyer belt are exhausted with vacuum chamber
Edge；
Step 3：Load monomer, ventilation, energization
Monomer HMDSO (HMDO) is loaded, it is carrier to be passed through argon gas, and target is set to negative potential, voltage-
1800V；Conveyer belt is set to keep negative potential, voltage -350V by adjusting power transmission shaft；
Step 4：Plasma treatment
Hydrogen is passed through, hydrogen, argon gas and monomer HMDSO (HMDO) are electric in the presence of metal cabinet electric field
From plasma is formed, monomer and the high energy particle constantly accelerated collide, energy transfer occur, reaches cracking or chemical bond rupture,
Living radical and polymerization Si-O-Si predecessors are formed, so as to uniform in the deposition generation of multi-terminal chip components and parts idiosome surface
Very thin SiOx films.
Above content is to combine specific/preferred embodiment further description made for the present invention, it is impossible to is recognized
The specific implementation of the fixed present invention is confined to these explanations.For general technical staff of the technical field of the invention,
Without departing from the inventive concept of the premise, it can also make some replacements or modification to the embodiment that these have been described,
And these are substituted or variant should all be considered as belonging to protection scope of the present invention.
Claims (11)
- A kind of 1. method for the external electrode for making electronic component, it is characterised in that comprise the following steps：S1, plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, on electronic component surface Deposition generates uniform SiOXFilm layer, electronic component surface is set to obtain certain hydrophobic performance；S2, to electronic component coating electrode slurry to form external electrode.
- 2. the method for the external electrode of electronic component is made as claimed in claim 1, it is characterised in that upon step s 2, The SiO for being deposited product surface by way of sinteringXFilm layer removes.
- 3. the method for the external electrode of electronic component is made as claimed in claim 1, it is characterised in that in step S1, use Conveyer belt makes electronic component by placing target in a vacuum chamber and not contacted with the target, and loads monomer HMDSO With the argon gas as carrier, the target is arranged to -1000~-2600V negative voltage, and the conveyer belt is arranged to -100~- 600V negative voltage, reacting gas is passed through in processing procedure, the reacting gas, the argon gas and the monomer HMDSO are in electricity Ionized in the presence of and form plasma, the monomer HMDSO collides with the high energy particle in the plasma, forms activity certainly By base and polymerization Si-O-Si predecessors, so as to generate uniform SiO in electronic component surface depositionXFilm layer.
- 4. the method for the external electrode of electronic component is made as claimed in claim 3, it is characterised in that the target is arranged to The casing of rectangle, the width and height of the casing are 10-40cm, and electronic component is on the conveyer belt from the casing Between pass through.
- 5. the method for the external electrode of electronic component is made as claimed in claim 4, it is characterised in that the length of the casing It is arranged as required to, and the casing is in the longitudinal direction using segmentation or non-subsection setup.
- 6. the method for the external electrode of the making electronic component as described in any one of claim 3 to 5, it is characterised in that described Target is made up of any of copper, iron, nickel, tungsten, molybdenum, titanium material.
- 7. the method for the external electrode of the making electronic component as described in any one of claim 3 to 5, it is characterised in that in target Material both ends set metal belt locating shaft, and conveyer belt and electronic component is in the center of target passage, pass through metal Conveyer belt carries and transported electronic component.
- 8. the method for the external electrode of the making electronic component as described in any one of claim 3 to 5, it is characterised in that described Reacting gas is any of hydrogen, oxygen, nitrogen.
- 9. the method for the external electrode of the making electronic component as described in any one of claim 1 to 5, it is characterised in that described Electronic component is multi-terminal chip components and parts.
- 10. a kind of surface treatment method of electronic component, it is characterised in that comprise the following steps：Plasma modification processing is carried out to its surface before external electrode is coated with to electronic component, deposited on electronic component surface Generate uniform SiOXFilm layer, electronic component surface is set to obtain certain hydrophobic performance；The plasma modification processing includes：Make electronic component by placing target in a vacuum chamber and not using conveyer belt Contacted with the target, and load monomer HMDSO and the argon gas as carrier, the target is arranged to -1000~-2600V's Negative voltage, the conveyer belt are arranged to -100~-600V negative voltage, and reacting gas, the reaction gas are passed through in processing procedure Body, the argon gas and the monomer HMDSO are ionized in the presence of electric field and are formed plasma, the monomer HMDSO with it is described etc. High energy particle collision in ion, forms living radical and polymerization Si-O-Si predecessors, so as to be sunk on electronic component surface Product generates uniform SiOXFilm layer.
- 11. surface treatment method as claimed in claim 10, it is characterised in that the electronic component is multi-terminal chip member Device.
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| CN201510967450.2A CN105575831B (en) | 2015-12-21 | 2015-12-21 | A kind of method for the external electrode for making electronic component |
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| CN201510967450.2A CN105575831B (en) | 2015-12-21 | 2015-12-21 | A kind of method for the external electrode for making electronic component |
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| CN105575831B true CN105575831B (en) | 2018-01-12 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985412A (en) * | 1996-11-25 | 1999-11-16 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Method of manufacturing microstructures and also microstructure |
| JP2001102247A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Chip electronic component |
| CN102290239A (en) * | 2010-05-19 | 2011-12-21 | 株式会社村田制作所 | Method for a producing ceramic electronic component |
| CN103773226A (en) * | 2013-12-20 | 2014-05-07 | 深圳顺络电子股份有限公司 | Hydrophobic solution and method for solving slurry sagging of chip element outer electrode |
-
2015
- 2015-12-21 CN CN201510967450.2A patent/CN105575831B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985412A (en) * | 1996-11-25 | 1999-11-16 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Method of manufacturing microstructures and also microstructure |
| JP2001102247A (en) * | 1999-09-30 | 2001-04-13 | Kyocera Corp | Chip electronic component |
| CN102290239A (en) * | 2010-05-19 | 2011-12-21 | 株式会社村田制作所 | Method for a producing ceramic electronic component |
| CN103773226A (en) * | 2013-12-20 | 2014-05-07 | 深圳顺络电子股份有限公司 | Hydrophobic solution and method for solving slurry sagging of chip element outer electrode |
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| CN105575831A (en) | 2016-05-11 |
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