CN105575777B - Deposition method, interlayer dielectric layer and semiconductor devices - Google Patents
Deposition method, interlayer dielectric layer and semiconductor devices Download PDFInfo
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- CN105575777B CN105575777B CN201410534859.0A CN201410534859A CN105575777B CN 105575777 B CN105575777 B CN 105575777B CN 201410534859 A CN201410534859 A CN 201410534859A CN 105575777 B CN105575777 B CN 105575777B
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Abstract
This application discloses a kind of deposition method, interlayer dielectric layer and semiconductor devices.Wherein, which includes semiconductor substrate being placed on the electrostatic chuck in settling chamber；Radio frequency source is opened to carry out heat temperature raising to settling chamber；Electrostatic chuck is grounded, so that semiconductor substrate forms discharge loop；It is passed through into settling chamber and treats reaction gas, to deposit to form film in semiconductor substrate.The deposition method is by opening radio frequency source with to settling chamber's progress heat temperature raising, then electrostatic chuck is grounded so that semiconductor substrate forms discharge loop, so that charge of the accumulation on semiconductor substrate is exported in heating up process, so as to reduce charge of the accumulation on semiconductor substrate in film deposition process, and reduce the plasma damage generated in film deposition process, and then the resistance to sparking energy of semiconductor devices is improved, and improve the reliability of device.
Description
Technical field
This application involves the technical field of semiconductor integrated circuit, in particular to a kind of deposition method, inter-level dielectric
Layer and semiconductor devices.
Background technology
In the manufacturing process of semiconductor devices, it usually needs deposition film is to form required device on semiconductor substrate
Part, such as deposited metal film is as interconnecting metal layer on semiconductor substrate, then the deposition medium for example on semiconductor substrate
Film (such as SiN films) is as interlayer dielectric layer etc..The compact structure of deposition film in order to improve, in the deposition of film
Usually plasma process and chemical vapor deposition method are combined in method, for example, by using plasma reinforced chemical vapour deposition
Technique (PECVD) or high density plasma CVD technique (HDPCVD) deposition film.
The deposition method of existing film includes the following steps：Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
It is passed through to settling chamber and treats reaction gas, open radio frequency source, and reaction gas is treated using low radio frequency power heating；Using firing frequency work(
Rate ionization treats reaction gas to form plasma, and deposition forms film on semiconductor substrate.As a kind of typical case,
Above-mentioned radio frequency source includes being located at the first radio frequency source above settling chamber and the second radio frequency source positioned at settling chamber side.It is treated in heating
In the step of reaction gas, the power of the first radio frequency source is 3000W, and the power of the second radio frequency source is 4000W.
However, the charge that above-mentioned deposition method plasma generates can be accumulated on semiconductor substrate, and charge can pass
It is directed on the grid in semiconductor substrate, so as to form leakage current in gate oxide square under the gate.When the charge of accumulation surpasses
When crossing certain amount, this leakage current can damage gate oxide, so as to reduce the resistance to sparking energy of semiconductor devices, such as with
Time related dielectric breakdown (TDDB).Such case is usually known as plasma damage (PID), also known as antenna effect
(PAE).In view of the above-mentioned problems, there is presently no effective solutions.
Invention content
The application is intended to provide a kind of deposition method, interlayer dielectric layer and semiconductor devices, to reduce film deposition process
The plasma damage of middle generation, and then improve the resistance to sparking energy of semiconductor devices.
To achieve these goals, this application provides a kind of deposition method, which includes：By semiconductor substrate
It is placed on the electrostatic chuck in settling chamber；Radio frequency source is opened to carry out heat temperature raising to settling chamber；Electrostatic chuck is grounded, so that
Semiconductor substrate forms discharge loop；It is passed through into settling chamber and treats reaction gas, to deposit to form film in semiconductor substrate.
Further, in above-mentioned deposition method, radio frequency source is including the first radio frequency source above settling chamber and positioned at heavy
Second radio frequency source of product room side；In the step of heat temperature raising, the power of the first radio frequency source is 1800~2200W, the second radio frequency
The power in source is 2700~3300W.
Further, in above-mentioned deposition method, in the step of electrostatic chuck is grounded, the power of the first radio frequency source for 0~
800W, the power of the second radio frequency source is 0~1000W.
Further, in above-mentioned deposition method, electrostatic chuck be grounded the step of time be 1~10s.
Further, in above-mentioned deposition method, deposition method is high density plasma CVD.
Further, in above-mentioned deposition method, include the step of deposition forms film on semiconductor substrate：In semiconductor
Substrate deposit forms gasket film；Deposition forms main film on substrate film.
Further, in above-mentioned deposition method, film is dielectric film.
Present invention also provides a kind of interlayer dielectric layer, wherein, interlayer dielectric layer is by the above-mentioned deposition method system of the application
It forms.
Present invention also provides a kind of semiconductor devices, the interlayer including semiconductor substrate and on semiconductor substrate is situated between
Matter layer, wherein, interlayer dielectric layer is made by the above-mentioned deposition method of the application.
Using the technical solution of the application, by opening radio frequency source to carry out heat temperature raising to settling chamber, then by electrostatic
Chuck is grounded so that semiconductor substrate forms discharge loop so that charge of the accumulation on semiconductor substrate in heating up process
It is exported, so as to reduce charge of the accumulation on semiconductor substrate in film deposition process, and reduces thin film deposition
The plasma damage generated in journey, and then the resistance to sparking energy of semiconductor devices is improved, and improve the reliability of device.Into
One step, due to using radio-frequency power lower compared with the prior art in heat temperature raising step, so as to avoid using firing frequency
Power carries out the breakdown directly generated in heat temperature raising step damage or generates a large amount of stored charges, and then further reduce thin
Charge of the accumulation on semiconductor substrate in film deposition process.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not form the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 shows the flow diagram for the deposition method that the application embodiment is provided；
The charge pattern on device surface obtained Fig. 2 shows the application comparative example 1；
Fig. 3 shows the charge pattern on the device surface that the embodiment of the present application 1 obtains；And
Fig. 4 shows the embodiment of the present application 1 to 4 and comparative example 1 obtain device the time correlation dielectric breakdown time Wei
Primary distribution curve.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., it is closed for describing a device or feature with the spatial position of other devices or feature
System.It can include " in ... top " it should be understood that exemplary term two kinds of " in ... top " and " in ... lower section "
Orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and to used herein above
Respective explanations are made in the opposite description in space.
As described in background technology, film deposition process plasma can generate plasma damage, so as to drop
The resistance to sparking energy of low semiconductor devices.Present inventor is studied regarding to the issue above, it is proposed that a kind of deposition side
Method.The deposition method on semiconductor substrate for forming film, as shown in Figure 1, the deposition method includes：By semiconductor substrate
It is placed on the electrostatic chuck in settling chamber；Radio frequency source is opened to carry out heat temperature raising to settling chamber；Electrostatic chuck is grounded, so that
Semiconductor substrate forms discharge loop；It is passed through into settling chamber and treats reaction gas, to deposit to form film in semiconductor substrate.
Above-mentioned deposition method by open radio frequency source with to settling chamber carry out heat temperature raising, then by electrostatic chuck be grounded with
Semiconductor substrate is made to form discharge loop so that charge of the accumulation on semiconductor substrate is exported in heating up process,
So as to reduce charge of the accumulation on semiconductor substrate in film deposition process, and reduce what is generated in film deposition process
Plasma damage, and then the resistance to sparking energy of semiconductor devices is improved, and improve the reliability of device.Further, by
Using radio-frequency power lower compared with the prior art in heat temperature raising step, added so as to avoid using high RF power
The breakdown directly generated in hot heating step damages or generates a large amount of stored charges, and then further reduce film deposition process
Charge of the middle accumulation on semiconductor substrate.
The technique that above-mentioned deposition method using plasma and chemical vapor deposition are combined, such as plasma-reinforced chemical
Vapor deposition or high density plasma CVD etc..In order to further improve the structural homogeneity of deposition film and cover
Lid ability, in a preferred embodiment, above-mentioned deposition method are high density plasma CVD.Using this
The film that deposition method is formed can be dielectric film, such as SiO2 films.It is of course also possible to form other with the deposition method
Film is used for example as metallic film of interconnecting metal layer etc..
Above-mentioned deposition method may be used the common depositing device in this field and carry out.Different equipment can have different
Structure, but have no effect on the implementation of the deposition method.In a preferred embodiment, radio frequency in used depositing device
Source includes being located at the first radio frequency source above settling chamber and the second radio frequency source positioned at settling chamber side.At this point, in settling chamber by
The plasma that radio-frequency drive is formed is more uniform.As an example, radio frequency source is using this preferred implementation in following operating procedure
Mode.
In the step of reaction gas is treated in heating, reaction gas is treated using low radio frequency power heating.In a kind of preferred reality
It applies in mode, the power of the first radio frequency source is 1800~2200W, and the power of the second radio frequency source is 2700~3300W.Compared to existing
Technology, this preferred embodiment reduce the power of radio frequency source in the step of reaction gas is treated in heating, to be further reduced accumulation
Charge on semiconductor substrate, and it is further reduced the plasma damage generated in film deposition process.Heat temperature raising when
Between and temperature can be set according to the material of institute's deposition film, the religion that those skilled in the art has the ability according to the application
It leads and sets above-mentioned parameter with the prior art.
In above-mentioned the step of being grounded electrostatic chuck, by the mode of electrostatic chuck ground connection, there are many kinds of (such as can lead to
Conducting wire is crossed to be grounded electrostatic chuck), as long as semiconductor substrate can be made to form discharge loop.It in this step can be by radio frequency
Source is kept open, and the power of radio frequency source can be set according to actual process demand.In a kind of preferred embodiment party
In formula, the power of the first radio frequency source is 0~800W in this step, and the power of the second radio frequency source is 0~1000W.At this point, accumulation
Charge on semiconductor substrate can be exported more completely to other than semiconductor substrate, so as to further reduce thin film deposition
The plasma damage generated in the process, and further improve the resistance to sparking energy of semiconductor devices.
The time of electrostatic chuck ground connection can be set according to the quantity for accumulating the charge on semiconductor substrate.Invention
People, when the time of electrostatic chuck ground connection is 1~10s, is accumulated on semiconductor substrate by testing and being obtained after theoretical research
Charge can more completely export to other than semiconductor substrate, so as to further reduce generated in film deposition process etc.
Ion dam age, and further improve the resistance to sparking energy of semiconductor devices.
It is above-mentioned to include the step of deposition forms film on semiconductor substrate：It is thin to form liner for deposition on semiconductor substrate
Film；Deposition forms main film on substrate film.When depositing gasket film and main film, radio frequency source when forming different films
Power or gaseous species and flow are slightly different, and those skilled in the art has the ability to be set according to the type of formed film
The power of radio frequency source.
Meanwhile present invention also provides a kind of interlayer dielectric layers, the interlayer dielectric layer is by the above-mentioned deposition method of the application
It is made.Plasma damage in the interlayer dielectric layer is reduced, and is hit so as to further improve the resistance to of interlayer dielectric layer
Wear performance.
Present invention also provides a kind of semiconductor devices, the interlayer including semiconductor substrate and on semiconductor substrate is situated between
Matter layer, the interlayer dielectric layer are made by the above-mentioned deposition method of the application.Plasma damage in the semiconductor devices obtains
To reduce, so as to further improve the resistance to sparking energy of semiconductor devices.
The illustrative embodiments according to the application are described in more detail below.However, these illustrative embodiments
It can be implemented by many different forms, and should not be construed to be limited solely to embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure herein is thoroughly and complete, and by these exemplary realities
The design for applying mode is fully conveyed to those of ordinary skill in the art.
Below by taking the interlayer dielectric layer on semiconductor substrate as an example, and further illustrate that the application carries in conjunction with the embodiments
The deposition method of confession.
Embodiment 1
A kind of deposition method of interlayer dielectric layer is present embodiments provided, which includes the following steps：
Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
Radio frequency source is opened to carry out heat temperature raising to settling chamber, wherein the power of the first radio frequency source is 1800W, the second radio frequency
The power in source is 2700W；
Electrostatic chuck is grounded, so that semiconductor substrate forms discharge loop, wherein the first radio frequency source and the first radio frequency source
Power be 0, electrostatic chuck ground connection time be 1s；
It is passed through into the settling chamber and treats reaction gas, and deposition forms film on semiconductor substrate, wherein depositing thin
The step of film, includes gasket film deposition step and main thin film deposition steps.
Embodiment 2
A kind of deposition method of interlayer dielectric layer is present embodiments provided, which includes the following steps：
Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
Radio frequency source is opened to carry out heat temperature raising to settling chamber, wherein the power of the first radio frequency source is 2200W, the second radio frequency
The power in source is 3300W；
Electrostatic chuck is grounded, so that semiconductor substrate forms discharge loop, wherein the power of the first radio frequency source is 800W,
The power of second radio frequency source is 1000W, and the time of electrostatic chuck ground connection is 10s；
It is passed through into the settling chamber and treats reaction gas, and deposition forms film on semiconductor substrate, wherein depositing thin
The step of film, includes gasket film deposition step and main thin film deposition steps.
Embodiment 3
A kind of deposition method of interlayer dielectric layer is present embodiments provided, which includes the following steps：
Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
Radio frequency source is opened to carry out heat temperature raising to settling chamber, wherein the power of the first radio frequency source is 2000W, the second radio frequency
The power in source is 3000W；
Electrostatic chuck is grounded, so that semiconductor substrate forms discharge loop, wherein the power 400W of the first radio frequency source, the
The power of two radio frequency sources is 500W, and the time of electrostatic chuck ground connection is 5s；
It is passed through into the settling chamber and treats reaction gas, and deposition forms film on semiconductor substrate, wherein depositing thin
The step of film, includes gasket film deposition step and main thin film deposition steps.
Embodiment 4
A kind of deposition method of interlayer dielectric layer is present embodiments provided, which includes the following steps：
Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
Radio frequency source is opened to carry out heat temperature raising to settling chamber, wherein the power of the first radio frequency source is 2300W, the second radio frequency
The power in source is 3400W；
Electrostatic chuck is grounded, so that semiconductor substrate forms discharge loop, wherein the power of the first radio frequency source is 850W,
The power of second radio frequency source is 1100W, and the time of electrostatic chuck ground connection is 12s；
It is passed through into the settling chamber and treats reaction gas, and deposition forms film on semiconductor substrate, wherein depositing thin
The step of film, includes gasket film deposition step and main thin film deposition steps.
Comparative example 1
This comparative example provides a kind of deposition method of interlayer dielectric layer, which includes the following steps：
Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
Radio frequency source is opened to carry out heat temperature raising to settling chamber, wherein the power of the first radio frequency source is 3000W, the second radio frequency
The power in source is 4000W；
It is passed through into the settling chamber and treats reaction gas, and deposition forms film on semiconductor substrate, wherein depositing thin
The step of film, includes gasket film deposition step and main thin film deposition steps.
Test：The charge on crystal column surface obtained using electrostatic force testing tool test comparison example 1 and embodiment 1 point
Cloth, result is as shown in Figures 2 and 3.Meanwhile the entire flow product wafer that embodiment 1 to 4 and comparative example 1 obtain is carried out
Reliability test, and the time punctured using the device medium that Weibull distribution acquisition embodiment 1 to 4 and comparative example 1 obtain, knot
Fruit is as shown in Figure 4.
The charge pattern on crystal column surface obtained Fig. 2 shows comparative example 1.Figure it is seen that comparative example 1
To wafer surface on charge be unevenly distributed, and a large amount of charges are had accumulated on edge surface.Fig. 3 shows that embodiment 1 obtains
To crystal column surface on charge pattern.From figure 3, it can be seen that charge is evenly distributed on the crystal column surface that embodiment 1 obtains,
And charge is seldom in the whole surface of wafer.
Fig. 4 shows that embodiment 1 to 4 and comparative example 1 obtain the time correlation dielectric breakdown time of device in product wafer
Weibull distribution curve.From fig. 4, it can be seen that 1 corresponding Weibull distribution slope of a curve very little (for 0.54) of comparative example, implements
The corresponding Weibull distribution slope of a curve of example 1 to 4 is very big (for 1.41-1.68).Above-mentioned Weibull distribution slope of a curve is bigger, device
The time correlation dielectric breakdown time of part is bigger, i.e. the reliability of product is higher.Therefore, embodiment 1 to 4 obtains the time of device
Associated media breakdown time is significantly greater than comparative example 1 and obtains the time correlation dielectric breakdown time of device.
It can be seen from the above description that the application the above embodiments realize following technique effect：
(1) by opening radio frequency source to carry out heat temperature raising to settling chamber, then electrostatic chuck is grounded so that semiconductor
Matrix forms discharge loop so that charge of the accumulation on semiconductor substrate is exported in heating up process, so as to reduce
Charge of the accumulation on semiconductor substrate in film deposition process, and reduce the plasma damage generated in film deposition process
Wound, and then the resistance to sparking energy of semiconductor devices is improved, and improve the reliability of device.
(2) due to using radio-frequency power lower compared with the prior art in heat temperature raising step, so as to avoid using high
Radio-frequency power carries out the breakdown directly generated in heat temperature raising step damage or generates a large amount of stored charges, and then be further reduced
Charge of the accumulation on semiconductor substrate in film deposition process.
The foregoing is merely the preferred embodiments of the application, are not limited to the application, for the skill of this field
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (8)
1. a kind of deposition method, which is characterized in that the deposition method includes the following steps：
Semiconductor substrate is placed on the electrostatic chuck in settling chamber；
It opens radio frequency source and heat temperature raising is carried out to the settling chamber；
The electrostatic chuck is grounded, so that the semiconductor substrate forms discharge loop；
It is passed through into the settling chamber and treats reaction gas, film is formed to be deposited on the semiconductor substrate,
The radio frequency source includes the first radio frequency source being located above the settling chamber and is penetrated positioned at the second of the settling chamber side
Frequency source；
In the step of heat temperature raising, the power of first radio frequency source is 1800~2200W, the work(of second radio frequency source
Rate is 2700~3300W.
2. deposition method according to claim 1, which is characterized in that described in the step of being grounded the electrostatic chuck
The power of first radio frequency source is 0~800W, and the power of second radio frequency source is 0~1000W.
3. deposition method according to claim 1, which is characterized in that the time for the step of electrostatic chuck is grounded is 1
~10s.
4. deposition method according to any one of claim 1 to 3, which is characterized in that the deposition method is high density
Plasma activated chemical vapour deposition.
5. deposition method according to any one of claim 1 to 3, which is characterized in that sink on the semiconductor substrate
The step of product forms the film includes：
Deposition forms gasket film on the semiconductor substrate；
Deposition forms main film in the gasket film.
6. deposition method according to any one of claim 1 to 3, which is characterized in that the film is dielectric film.
7. a kind of interlayer dielectric layer, which is characterized in that the interlayer dielectric layer is by according to any one of claims 1 to 6 heavy
Product method is made.
8. a kind of semiconductor devices, the interlayer dielectric layer including semiconductor substrate and on the semiconductor substrate, feature
It is, the interlayer dielectric layer is made by deposition method according to any one of claims 1 to 6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410534859.0A CN105575777B (en) | 2014-10-11 | 2014-10-11 | Deposition method, interlayer dielectric layer and semiconductor devices |
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| CN201410534859.0A CN105575777B (en) | 2014-10-11 | 2014-10-11 | Deposition method, interlayer dielectric layer and semiconductor devices |
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| CN105575777B true CN105575777B (en) | 2018-06-08 |
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| CN110502049B (en) * | 2019-08-30 | 2021-05-07 | 北京北方华创微电子装备有限公司 | Chuck temperature control method, chuck temperature control system and semiconductor equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5997962A (en) * | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
| CN101202207A (en) * | 2006-12-12 | 2008-06-18 | 联华电子股份有限公司 | Method for removing successive sedimentation multiplelayer films of electric charge cumulated on the substrate |
| CN102737939A (en) * | 2011-04-15 | 2012-10-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and working method thereof |
| CN203049032U (en) * | 2013-01-18 | 2013-07-10 | 中芯国际集成电路制造(北京)有限公司 | Chemical vapor deposition device |
-
2014
- 2014-10-11 CN CN201410534859.0A patent/CN105575777B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5997962A (en) * | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
| CN101202207A (en) * | 2006-12-12 | 2008-06-18 | 联华电子股份有限公司 | Method for removing successive sedimentation multiplelayer films of electric charge cumulated on the substrate |
| CN102737939A (en) * | 2011-04-15 | 2012-10-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment and working method thereof |
| CN203049032U (en) * | 2013-01-18 | 2013-07-10 | 中芯国际集成电路制造(北京)有限公司 | Chemical vapor deposition device |
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