CN105568241A - Radio-frequency bias sputtering device and sputtering method - Google Patents
Radio-frequency bias sputtering device and sputtering method Download PDFInfo
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- CN105568241A CN105568241A CN201610132641.1A CN201610132641A CN105568241A CN 105568241 A CN105568241 A CN 105568241A CN 201610132641 A CN201610132641 A CN 201610132641A CN 105568241 A CN105568241 A CN 105568241A
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- vacuum chamber
- counter electrode
- rotation axis
- electrode
- sputter equipment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a radio-frequency bias sputtering device and a sputtering method. The radio-frequency bias sputtering device comprises a vacuum chamber, a bias counter electrode, at least two auxiliary magnetic poles, at least one unbalanced magnetic control electrode and two radio-frequency power supplies, wherein each unbalanced magnetic control electrode is provided with an unbalanced magnetic field; the bias counter electrode and the auxiliary magnetic poles are fixed at one end of the vacuum chamber; the auxiliary magnetic poles are symmetrically distributed on two sides of the bias counter electrode; the unbalanced magnetic control electrode is fixed at the other end of the vacuum chamber; the bias counter electrode and the unbalanced magnetic control electrode are electrically connected with the radio-frequency power supplies respectively; the bias counter electrode is insulated from the vacuum chamber; and the auxiliary magnetic poles and the unbalanced magnetic control electrode form a closed field. A high-density electrolyte membrane can be prepared by using the radio-frequency bias sputtering device, and the process is stable.
Description
Technical field
The present invention relates to dielectric film preparing technical field, particularly relate to a kind of rf bias sputter equipment and sputtering method.
Background technology
All solid state Solid Oxide Fuel Cell is Energy conversion device important at present.The ionogen of Solid Oxide Fuel Cell adopts the method for compressing tablet to prepare traditionally, but the battery ohm resistance obtained is comparatively large, and the operating temperature of battery is high.The development of positive electrode support solid oxide fuel cell in recent years, the dielectric film using traditional tabletting method to prepare can not satisfy the demands.
Have the method adopting radio-frequency sputtering to prepare dielectric film at present, the dielectric film that this method is prepared cannot reach the demand of industry development, can not prepare the dielectric film of high-compactness, limits the development and application of positive electrode support solid oxide fuel cell.
Rf bias sputtering equipment comprises non-equilibrium magnetic controlled electrode, biased counter electrode and vacuum chamber, and plasma can be formed in the space that is made up of two electrodes and vacuum chamber.In these electrodes, at least one is to provide the material of radio-frequency sputtering, and produces radio-frequency plasma, and rf bias counter electrode is by attracting the substrate on plasma bombardment substrate supporting frame, thus obtains dense electrolyte plasma membrane.Conventional radio frequency sputter equipment, use conventional planar unbalanced magnetron electrode, substrate supporting frame is as counter electrode together with vacuum chamber, and the usual ground connection of this counter electrode, to produce radio-frequency plasma, mainly serves as and prepare oxide film.Radio-frequency sputtering device solves the electric discharge problem of magnetic control electrode surface, and magnetic control electrode produces radio-frequency plasma, and whole sputter procedure is stablized.But because the energy of deposition source material is low, on the interface that film thickens, deposition and atomic or atomic group can not fully spread, and then cause deposited film in microtexture, have many holes, and in uneven thickness, the demand to utilizing sputter equipment to prepare high-compactness dielectric film can not be met.
US Patent No. 5556519 discloses a kind of magnetic controlled sputtering ion plating device, by adopting non-equilibrium negative electrode, attracts high-density direct-current plasma to substrate surface, the non-dielectric films such as main preparation fine and close nitride, carbide and metallic membrane.These films have significant feature: sputtering material belongs to conductor, and the film deposited also is conductor.Therefore make substrate constant voltage be biased, high-quality dense film can be obtained.And adopting this equipment to prepare sull or dielectric film, magnetic control electrode causes sputtering not continue due to charge accumulated or constantly discharges, and whole process is in transient.Therefore, this kind equipment for the preparation of going out sull or dielectric film, namely can not cannot prepare high-compactness dielectric film.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of for depositing high-compactness dielectric film, and the stable rf bias sputter equipment of sputter procedure and sputtering method.
For solving the problem, the invention provides a kind of rf bias sputter equipment, rf bias sputter equipment comprises vacuum chamber, biased counter electrode, at least two auxiliary magnetic poles, at least one non-equilibrium magnetic controlled electrode and two radio-frequency power supplies, each non-equilibrium magnetic controlled electrode is provided with unbalanced magnetic field, described biased counter electrode and at least two auxiliary magnetic poles are fixed on the one end in vacuum chamber, at least two auxiliary magnetic poles are symmetrically distributed in the both sides of biased counter electrode, described at least one non-equilibrium magnetic controlled electrode is fixed on the other end in vacuum chamber, described biased counter electrode and non-equilibrium magnetic controlled electrode are electrically connected with radio-frequency power supply respectively, described biased counter electrode and vacuum chamber insulate, described at least two auxiliary magnetic poles and non-equilibrium magnetic controlled electrode form closed field.
Further, described biased counter electrode comprises slide electric ring, primary rotation axis, central rotation plate, heating unit, fixed gear, transmitting gear, motor and at least two substrate supporting framves, described primary rotation axis rotates and is located on described vacuum chamber, and described primary rotation axis and vacuum chamber insulate, the first end of described primary rotation axis is positioned at outside vacuum chamber, second end of primary rotation axis is positioned at vacuum chamber, and the first end of described primary rotation axis is connected with motor; The electric ring of described slip slides and is located on primary rotation axis and is electrically connected, and the electric ring that simultaneously slides is connected with radio-frequency power supply, and the electric ring of described slip is positioned at outside vacuum chamber; Described fixed gear and described primary rotation axis coaxially arrange and are fixed in described vacuum chamber, described heating unit is fixed on described fixed gear, described central rotation plate is fixed on the second end of primary rotation axis, described at least two substrate supporting framves rotate and are located on described central rotation plate, each substrate supporting frame is provided with transmitting gear, described transmitting gear and described fixed gear engaged transmission.
Further, the angle between the medullary ray of described non-equilibrium magnetic controlled electrode and the axial line of primary rotation axis is between 0 ° to 30 °.
Further, described vacuum chamber is provided with for being connected scavenge port with vacuum pump and for the inlet pipe of injecting gas in vacuum chamber, described vacuum chamber inwall is provided with cooling tube.
Further, described rf bias sputter equipment also comprises cooling-water machine, and described cooling-water machine is connected with cooling tube.
Further, be provided with cooling channel in described non-equilibrium magnetic controlled electrode, described cooling channel is connected with cooling tube.
Further, described heating unit is resistive heater or heating tube.
Further, described rf bias sputter equipment also comprises shielding case, and described shielding case is located on vacuum chamber, and biased counter electrode is positioned at shielding case, described vacuum chamber ground connection.
The present invention also provides a kind of sputtering method adopting above-mentioned rf bias sputter equipment to carry out, and comprises the following steps:
A, starting material are made substrate, and its substrate is cleaned up;
B, the substrate after cleaned is fixed on substrate supporting frame;
C, on non-equilibrium magnetic controlled electrode, electrolyte target material is installed;
D, vacuum pump evacuation room is utilized to make its vacuum tightness be less than 1.0 × 10
-4pa;
E, to vacuum chamber heating, make the temperature in its vacuum chamber reach 200 DEG C-500 DEG C;
F, pour argon gas in vacuum chamber, make the pressure in its vacuum chamber be 0.1Pa;
G, biased counter electrode rotate, and rotating speed is adjusted to 3-10 rev/min;
H, open non-equilibrium magnetic controlled electrode and biased counter electrode, non-equilibrium magnetic controlled electrode power is increased to 100-200W gradually simultaneously, and the power keeping biased counter electrode is 5 ~ 50W, and passes into oxygen, and the flow of oxygen remains on 5SCCM;
After i, electrolytic thin-membrane have deposited, naturally cooling, obtained dielectric film.
Sputter equipment of the present invention is by setting up auxiliary magnetic pole, and non-equilibrium magnetic controlled electrode adopts Nonequilibrium magnetic field distribution simultaneously, makes its plasma body in sputter procedure extend to substrate surface, namely increases the plasma density of bombardment to substrate surface; Biased counter electrode is set simultaneously, to attract radio-frequency plasma, guarantees process stabilization.Utilize the film microstructure tight that this equipment is prepared, i.e. compact structure, and thickness is even, film thickness can be less than 5 μm simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of the better embodiment of rf bias sputter equipment of the present invention.
Fig. 2 is the schematic diagram of auxiliary magnetic field and counter electrode.
Fig. 3 is the structural representation of another better embodiment of rf bias sputter equipment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As depicted in figs. 1 and 2, the better embodiment that the present invention prepares the rf bias sputter equipment of high-compactness dielectric film comprises vacuum chamber 1, biased counter electrode, shielding case 4, non-equilibrium magnetic controlled electrode 12 and two auxiliary magnetic poles 14, described biased counter electrode and non-equilibrium magnetic controlled electrode 12 are electrically connected with radio-frequency power supply (scheming not shown) respectively, described two auxiliary magnetic pole 14 symmetries are located at the both sides of biased counter electrode, described biased counter electrode and two auxiliary magnetic poles 14 are all located at the one end in vacuum chamber 1, described non-equilibrium magnetic controlled electrode 12 is located at the other end in vacuum chamber 1, described shielding case 4 is fixed in vacuum chamber 1, and described shielding case 4 is in tubbiness, and bias electrode is positioned at shielding case 4, described vacuum chamber 1 ground connection, and described shielding case 4 produces the electric field of plasma body for strengthening biased counter electrode further.
Described vacuum chamber 1 is provided with scavenge port 13 and inlet pipe (scheming not shown), and described scavenge port 13 is connected with vacuum pump and is used for vacuumizing; Described inlet pipe is used for injecting gas in vacuum chamber 1, and described vacuum chamber 1 inwall is provided with for cooling vacuum room 1 cooling tube (scheming not shown), and described cooling tube is connected with cooling-water machine.
Described biased counter electrode comprises slide electric ring 2, primary rotation axis 3, central rotation plate 5, heating unit 8, fixed gear 10, transmitting gear 11 and four substrate supporting framves 6.Described primary rotation axis 3 is located on described vacuum chamber 1 by bearing, the first end of described primary rotation axis 3 is positioned at outside vacuum chamber 1, second end of primary rotation axis 3 is positioned at vacuum chamber 1, described primary rotation axis 3 first end is connected with motor by belt, and motor rotates for driving primary rotation axis 3; The electric ring 2 of described slip slides and is located on primary rotation axis 3 and is electrically connected, and the electric ring 2 that simultaneously slides is connected with radio-frequency power supply, and the electric ring 2 of described slip is positioned at outside vacuum chamber 1; Described fixed gear 10 arranges with described primary rotation axis 3 is coaxial and is fixed in described vacuum chamber 1 by rivet 9, and described heating unit 8 is fixed on described fixed gear 10; Described central rotation plate 5 is fixed on the second end of primary rotation axis 3, described central rotation plate 5 is provided with four substrate supporting framves 6, each substrate supporting frame 6 is provided with secondary turning axle 7, described secondary turning axle 7 rotates and is located on central rotation plate 5, described secondary turning axle 7 is provided with transmitting gear 11, described transmitting gear 11 and described fixed gear 10 engaged transmission, substrate is fixed on substrate supporting frame 6.The axis of described non-equilibrium magnetic controlled electrode 12 and the axis being parallel of primary rotation axis 3, in other embodiments, the angle between the axis of described non-equilibrium magnetic controlled electrode 12 and the axis of primary rotation axis 3 can be 10 °, 15 °, 20 ° or 30 °.Described two auxiliary magnetic poles 14 are arranged symmetrically with centered by primary rotation axis 3, and the upper magnetic pole of two auxiliary magnetic poles 14 and the outer magnetic pole of non-equilibrium magnetic controlled electrode 12 form closed field, and described two auxiliary magnetic poles 14 are curved, make it coordinate with central rotation plate 5.Four substrate supporting plates 6, while rotation, also can rotate around the medullary ray of primary rotation axis 3, and the substrate on its substrate supporting plate 6 is sputtered more uniformly.
Described non-equilibrium magnetic controlled electrode 12 has unbalanced magnetic field, the different amts of two kinds of magnetic poles namely in same one end of non-equilibrium magnetic controlled electrode 12.Also be provided with cooling channel (cooling duct) in described non-equilibrium magnetic controlled electrode 12, for cooling non-equilibrium magnetic controlled electrode 12, the water coolant in cooling tube finally flows back in cooling-water machine through cooling channel.
Below the processing step preparing film is described:
A, first starting material are made substrate, and its substrate is cleaned up make its depositional plane surface cleaning;
Secondly b, the substrate after cleaned is fixed on substrate supporting frame 6;
C, on non-equilibrium magnetic controlled electrode, electrolyte target material is installed;
D, then vacuum pump evacuation room 1 is utilized to make its vacuum tightness be less than 1.0 × 10
-4pa;
E, opened by heating unit 8, the temperature in its vacuum chamber 1 is reached at 200 DEG C-500 DEG C, and described heating unit 8 can adopt heating tube or resistive heater;
F, pour argon gas in vacuum chamber 1, make the pressure in its vacuum chamber be 0.1Pa;
G, biased counter electrode rotating speed is set to 3-10 rev/min, namely uses driven by motor primary rotation axis 3, make the rotating speed of its primary rotation axis 3 be 3-10 rev/min;
H, open non-equilibrium magnetic controlled electrode and biased counter electrode, non-equilibrium magnetic controlled electrode power is increased to 100-200W gradually simultaneously, and the power keeping biased counter electrode is 5 ~ 50W, and passes into oxygen, and the flow of oxygen remains on 5SCCM;
After i, electrolytic thin-membrane have deposited, naturally cooling, obtained dielectric film.
Biased counter electrode operationally can adsorb the plasma body produced from non-equilibrium magnetic controlled electrode 12, thus reduce the plasma distribution on non-equilibrium magnetic controlled electrode 12 surface, increase the plasma distribution of substrate supporting plate 6 one end, and the substrate surface realized on plasma bombardment substrate supporting plate, plasma body not at non-equilibrium magnetic controlled electrode 12 surface sediment, sputtering that therefore can be continual and steady.Non-equilibrium magnetic controlled electrode 12 adopts unbalanced magnetic field arrange and set up auxiliary magnetic pole 14 simultaneously, increase the magnetic line of force distribution between non-equilibrium magnetic controlled electrode 12 and biased counter electrode, make its plasma distribution even, thus bombardment distributes to the plasma uniformity of substrate surface, namely, on the interface that film thickens, deposition and atomic or atomic group can fully spread, make the homogeneity of its deposit film on composition, microtexture and thickness high, the film finally produced has high-compactness and strong mechanical performance.Apply to the thickness that positive electrode support solid oxidized fuel cell field effectively can reduce dielectric film, reduce the operating temperature of battery, in realization, low temperature running, brings huge economic benefit to society.
Adopt radio-frequency power supply compare use direct supply, can reduce bias electrode and substrate surface electric discharge, and then avoid prepared electrolytic thin-membrane occur composition and density distribution uneven, high quality dense electrolyte plasma membrane cannot be prepared.
Sputter equipment of the present invention and sputtering method can also prepare the dielectric film of all-solid lithium-ion battery and relevant dielectric film.
Embodiment 2
As shown in Figure 3, the present embodiment difference from Example 1 is: be provided with two the first electrodes, and rest part is all identical with enforcement 1.
Described two non-equilibrium magnetic controlled electrode 12 symmetries are located in vacuum chamber 1, further strengthen sputtering power.
These are only embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure utilizing specification sheets of the present invention and accompanying drawing content to do, is directly or indirectly used in the technical field that other are relevant, all in like manner within scope of patent protection of the present invention.
Claims (9)
1. a rf bias sputter equipment, it is characterized in that: rf bias sputter equipment comprises vacuum chamber, biased counter electrode, at least two auxiliary magnetic poles, at least one non-equilibrium magnetic controlled electrode and two radio-frequency power supplies, each non-equilibrium magnetic controlled electrode is provided with unbalanced magnetic field, described biased counter electrode and at least two auxiliary magnetic poles are fixed on the one end in vacuum chamber, at least two auxiliary magnetic poles are symmetrically distributed in the both sides of biased counter electrode, described at least one non-equilibrium magnetic controlled electrode is fixed on the other end in vacuum chamber, described biased counter electrode and non-equilibrium magnetic controlled electrode are electrically connected with radio-frequency power supply respectively, described biased counter electrode and vacuum chamber insulate, described at least two auxiliary magnetic poles and non-equilibrium magnetic controlled electrode form closed field.
2. rf bias sputter equipment as claimed in claim 1, it is characterized in that: described biased counter electrode comprises slide electric ring, primary rotation axis, central rotation plate, heating unit, fixed gear, transmitting gear, motor and at least two substrate supporting framves, described primary rotation axis rotates and is located on described vacuum chamber, and described primary rotation axis and vacuum chamber insulate, the first end of described primary rotation axis is positioned at outside vacuum chamber, second end of primary rotation axis is positioned at vacuum chamber, and the first end of described primary rotation axis is connected with motor; The electric ring of described slip slides and is located on primary rotation axis and is electrically connected, and the electric ring that simultaneously slides is connected with radio-frequency power supply, and the electric ring of described slip is positioned at outside vacuum chamber; Described fixed gear and described primary rotation axis coaxially arrange and are fixed in described vacuum chamber, described heating unit is fixed on described fixed gear, described central rotation plate is fixed on the second end of primary rotation axis, described at least two substrate supporting framves rotate and are located on described central rotation plate, each substrate supporting frame is provided with transmitting gear, described transmitting gear and described fixed gear engaged transmission.
3. rf bias sputter equipment as claimed in claim 2, is characterized in that: the angle between the medullary ray of described non-equilibrium magnetic controlled electrode and the axial line of primary rotation axis is between 0 ° to 30 °.
4. rf bias sputter equipment as claimed in claim 1, is characterized in that: described vacuum chamber is provided with for being connected scavenge port with vacuum pump and for the inlet pipe of injecting gas in vacuum chamber, described vacuum chamber inwall is provided with cooling tube.
5. rf bias sputter equipment as claimed in claim 4, is characterized in that: described rf bias sputter equipment also comprises cooling-water machine, and described cooling-water machine is connected with cooling tube.
6. rf bias sputter equipment as claimed in claim 5, is characterized in that: be provided with cooling channel in described non-equilibrium magnetic controlled electrode, described cooling channel is connected with cooling tube.
7. rf bias sputter equipment as claimed in claim 1, is characterized in that: described heating unit is resistive heater or heating tube.
8. rf bias sputter equipment as claimed in claim 1, is characterized in that: described rf bias sputter equipment also comprises shielding case, and described shielding case is located on vacuum chamber, and biased counter electrode is positioned at shielding case, described vacuum chamber ground connection.
9. the sputtering method adopting the rf bias sputter equipment as described in claim 1 ~ 8 any one to carry out, is characterized in that: comprise the following steps:
A, starting material are made substrate, and its substrate is cleaned up;
B, the substrate after cleaned is fixed on substrate supporting frame;
C, on non-equilibrium magnetic controlled electrode, electrolyte target material is installed;
D, vacuum pump evacuation room is utilized to make its vacuum tightness be less than 1.0 × 10
-4p
a;
E, to vacuum chamber heating, make the temperature in its vacuum chamber reach 200 DEG C-500 DEG C;
F, pour argon gas in vacuum chamber, make the pressure in its vacuum chamber be 0.1Pa;
G, biased counter electrode rotate, and rotating speed is adjusted to 3-10 rev/min;
H, open non-equilibrium magnetic controlled electrode and biased counter electrode, non-equilibrium magnetic controlled electrode power is increased to 100-200W gradually simultaneously, and the power keeping biased counter electrode is 5 ~ 50W, and passes into oxygen, and the flow of oxygen remains on 5SCCM;
After i, electrolytic thin-membrane have deposited, naturally cooling, obtained dielectric film.
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| CN201610132641.1A CN105568241A (en) | 2016-03-09 | 2016-03-09 | Radio-frequency bias sputtering device and sputtering method |
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| CN201610132641.1A CN105568241A (en) | 2016-03-09 | 2016-03-09 | Radio-frequency bias sputtering device and sputtering method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114107901A (en) * | 2020-08-28 | 2022-03-01 | 中国科学院半导体研究所 | Epitaxial preparation of tetragonal BiFeO on semiconductor ZnO3Method and system for thin film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1606795A (en) * | 2001-11-14 | 2005-04-13 | 应用材料有限公司 | Magnet array in conjunction with rotating magnetron for plasma sputtering |
| CN1865495A (en) * | 2005-05-20 | 2006-11-22 | 中国科学院半导体研究所 | Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device |
| CN101418430A (en) * | 2008-09-09 | 2009-04-29 | 哈尔滨工业大学 | Omnidirectional ion injection and deposition batch composite handling arrangement and method |
-
2016
- 2016-03-09 CN CN201610132641.1A patent/CN105568241A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1606795A (en) * | 2001-11-14 | 2005-04-13 | 应用材料有限公司 | Magnet array in conjunction with rotating magnetron for plasma sputtering |
| CN1865495A (en) * | 2005-05-20 | 2006-11-22 | 中国科学院半导体研究所 | Revolution and rotation arrangement in reaction chamber of metallorganics chemical vapor deposition device |
| CN101418430A (en) * | 2008-09-09 | 2009-04-29 | 哈尔滨工业大学 | Omnidirectional ion injection and deposition batch composite handling arrangement and method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114107901A (en) * | 2020-08-28 | 2022-03-01 | 中国科学院半导体研究所 | Epitaxial preparation of tetragonal BiFeO on semiconductor ZnO3Method and system for thin film |
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Application publication date: 20160511 |