CN105552096A - Image sensor chip capable of implementing plasma color filtering on metal layers in pixels - Google Patents
Image sensor chip capable of implementing plasma color filtering on metal layers in pixels Download PDFInfo
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- 238000003491 array Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
- 238000003384 imaging method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 238000012805 post-processing Methods 0.000 abstract 2
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- 239000000975 dye Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
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- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
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- 238000006243 chemical reaction Methods 0.000 description 4
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- 238000010521 absorption reaction Methods 0.000 description 2
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- 239000002082 metal nanoparticle Substances 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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Abstract
The invention discloses an image sensor chip capable of implementing plasma color filtering on metal layers in pixels. The mage sensor chip is characterized by comprising a pixel array, wherein the pixel array comprises multiple pixels; the metal layer in each pixel comprises a plasma color filter; the plasma filters are periodically-arranged through holes, and the arrangement periods can be triangular, square and the like; and the aperture of the through holes is d, and the pitch of the holes is p. According to the image sensor chip, the plasma filters are implemented on the metal layers in the pixels to replace an existing filter lens that is arranged on the top of each pixel and implemented through complex post processing; due to the design of the hole array periods, hole diameters, hole shapes and other determined filtering frequencies for the through holes in the metal layers, the color filters can be directly integrated in the chip; according to the method, the color filters and photodiodes in photosensitive regions are arranged closely, so that a better imaging performance can be achieved; and meanwhile, a method compatible with a standard CMOS process (aluminum layer) is adopted to replace the costly post processing, so that the cost of the image sensor chip is greatly lowered.
Description
Technical field
The present invention relates to integrated circuit sensor and chip, be specifically related to the image sensor chip that a kind of pixel inner metal layer implements plasma colour filter.
Background technology
Complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor market increased very fast in recent years.Compare with conventional digital image charge coupled device (CCD) technology, its main advantage is can by image device, the electronic module integrated monolithic digital camera chips such as spectrum assignment, analog-to-digital conversion, signal transacting, realize the imaging system of more low cost, low-power consumption, be particularly useful for the market of the fast development of the portable device such as mobile phone, computer.Although image sensor technologies has obtained huge progress in recent years, consumer still expects more high-resolution, namely when keeping size sensor constant, continuous increase pixel quantity, the light signal causing each pixel to receive reduces by this, for ensureing picture quality, having higher requirement namely reduce size to image sensor technologies, improve conversion efficiency and reduce noise, but the further optimization of pixel technique of existing optical filtering technical limitations.
Cmos image sensor realizes colour imaging by organic dyestuff optical filtering, and optical filtering is between optical microlens and imageing sensor, and saturating filter red, green and blue standard three coloured light are composed, but this technology has some limitations.First, optical filtering is absorbing material, can only the incident light energy of permeation parts, and light transmission efficiency is very low, thus when Pixel Dimensions diminishes through incident light very limited, thus affect image quality.Secondly, because the absorption coefficient of optical filtering dye materials is low, certain requirement (being greater than hundreds of nanometer) is had, because which limit the realization of small pixel to the thickness of optical filtering.In addition, organic dyestuff colour filter at high temperature or long-time uv-exposure time optics unstable properties.Especially in the fabrication process photodiode array needs the photoetching of fine alignment with optical filtering, thus improve manufacturing cost.
Up-to-date scientific research result shows, structural type photonic material, as plasma optical filtering, can select to transmit specific narrow band signal and effectively stop other frequency signals, therefore alternative organic dyestuff optical filtering is expected to, to realize the further improvement of image sensor pixel technique.Plasma optical filtering is realized by the hole array metal film of a fixed structure, made through wavelength between visible-range (400nm to 800nm) by the size and spacing that adjust aperture, owing to possessing good narrow-band filtering characteristic, be therefore very suitable for the optical filtering of visible ray.Its operation principle is as follows: first have one block of metal comprising electronegative plasma and positively charged ion core background, its electron density causes the vibration of a resonant frequency point relevant to material apart from the displacement of positive core, and this frequency is called as plasma frequency.When the metal nanoparticle of sub-skin depth thickness is irradiated by a plane wave light source, electric field will replace free electron.The interaction of light and metal nanoparticle will cause localized surface plasmons resonance (LSPR).When this reaction is close to plasma frequency, this will cause resonant check scattering and the absorption of incident light, realize the unique optical properties of metallic colloid.The relevant abnormal optical transmission (EOT of wavelength is explored by plasma wave-filter, ExtraordinaryOpticalTransmission) with surface plasma excimer (SPP, SurfacePlasmonPolaritons) interaction realizes colorized optical filtering mirror, provide the method for a desirable alternative traditional colour imaging optical filtering, be with a wide range of applications.The main advantage of this technology comprises: adjustable, namely can be realized the filtration of different visible light band wavelength by the diameter in convergent-divergent array period and hole; Easy manufacture, usual aluminium is comparatively ideal material in practical application, because its dielectric loss is low, only needs the optical filtering that a kind of material can realize different colours; Low cost, can be produced by standard CMOS process, mutually compatible with the production technology of imageing sensor.
Existing plasma realizes optical filtering method (StanleyP.Burgos, ColorImagingviaNearestNeighborHoleCouplinginPlasmonicCol orFiltersIntegratedontoaComplementaryMetal-OxideSemicond uctorImageSensor, NanoLetter, vol.7, no.11, pp.10038 – 10047,2013.) top that the thin metal film with aperture array is attached to imageing sensor realizes colorized optical filtering mirror, as shown in Figure 1.Optical filtering optical filtering frequency is that characteristic by changing hole array (such as size, spacing, periodically, shape etc.) regulates, and therefore plasma optical filtering can utilize single-layer metal to realize the filtration of many color of light.In other words, traditional organic dye optical filtering needs for the specific dye technology of each colour planning, and plasma optical filtering only can realize the filtration of any color by layer of metal film.In Fig. 1, every hole is circular, for the color needing to select to filter, can design optimum size diameter and the arrangement cycle of this plasma vias array.Although plasma optical filtering has the advantage being better than conventional organic dye in imaging applications, at imageing sensor top, integrated plasma optical filtering needs complicated aft-loaded airfoil step, this significantly increases cost.In addition, how accurately alignment image transducer and plasma optical filtering are also problem demanding prompt solutions.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides the image sensor chip that a kind of pixel inner metal layer implements plasma colour filter, directly implement plasma colour filter by the metal level in pixel inside, solve the deficiency of conventional images transducer.
Technical scheme: for achieving the above object, the technical solution used in the present invention is: a kind of pixel inner metal layer implements the image sensor chip of plasma colour filter, it is characterized in that, comprise pel array, pel array comprises some pixels, the metal level of each pixel inside comprises plasma colour filter, and described plasma colour filter is the through hole with periodic arrangement; The size in the aperture of described through hole is d, and pitch of holes is p;
Comprise the quick row parallel signal reading circuit be connected with pel array, described signal read circuits comprises row decoder, line driver, column decoder, row driver, row parallel gain adjustable amplifier, row parallel A/D converter, static random access memory, sense amplifier, Low Voltage Differential Signal reading module, static register, time-sequence control module and digital control current source;
Pel array is under the effect of row decoder and line driver, and the signal of pel array is read out line by line row parallel gain adjustable amplifier and row parallel A/D converter; The signal of row parallel A/D converter is through the control of column decoder and row driver, and grouping reads into static random access memory and sense amplifier, reads module by data pio chip eventually through high velocity, low pressure differential signal; Wherein, the work of time-sequence control module control lines decoder, line driver, column decoder and row driver; Static register controls the change in gain of row parallel gain adjustable amplifier; Digital control current source provides bias current to row parallel gain adjustable amplifier and row parallel A/D converter.
Further, described arrays of openings mode comprises triangular shaped periods arrangement or foursquare periodic arrangement.
Further, described through hole comprises circular port, octagon hole and square hole.
Further, described through-hole aperture d and pitch of holes p is as follows according to the light settings of different wave length:
Green glow: d=180 nanometer; P=340 nanometer;
Ruddiness: d=240 nanometer; P=420 nanometer;
Blue light: d=140 nanometer; P=260 nanometer.
Beneficial effect: a kind of pixel inner metal layer provided by the invention implements the image sensor chip of plasma colour filter, the inner metal layer of standard CMOS image sensor semiconductor manufacture technics is utilized directly in pixel, to realize plasma optical filtering, to meet the trend that pixel continues downsizing.By the metallic hole array cycle, (pitch of holes distance, p), the difference of bore dia (d) and hole shape, can determine frequency filtering, makes redness, green and blue filter can be directly integrated in the inside of cmos image sensor chip.Meanwhile, this image sensor chip adopts high speed row parallel signal reading circuit.Specifically have the following advantages:
(1) the present invention directly implements plasma optical filtering on the metal level of pixel inside, and this optical filtering is tight with the photodiode distance of the photosensitive region implemented on substrate, can obtain better imaging performance;
(2) method of employing of the present invention and standard CMOS process (aluminium lamination) compatibility replaces expensive reprocessing to process, greatly cost-saving;
(3) present invention also offers the quick row parallel signal reading circuit that is applicable to large Array sensor, sensor array and reading circuit are integrated on same chip, induced signal is directly changed into digital signal and export, improve frame rate.
Accompanying drawing explanation
Fig. 1 is traditional plasma display filter structure chart manufactured above image sensor pixel by aftertreatment technology;
Fig. 2 is the circular port of periodic arrangement triangular in shape on the metal level as plasma colour filter;
Fig. 3 is the plasma colour filter design vertical view of different hole shape;
Fig. 4 (a) is conventional organic dyes filtered light image sensor pixel profile;
The plasma filtered light image sensor pixel profile that Fig. 4 (b) implements outward for pixel;
The plasma filtered light image sensor pixel profile of Fig. 4 (c) for implementing in pixel;
Fig. 5 is pel array vertical view of the present invention;
Fig. 6 is the Organization Chart of chip of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
A kind of pixel inner metal layer implements the image sensor chip of plasma colour filter, as shown in Figure 5, comprise pel array, pel array comprises some pixels, the metal level of each pixel inside comprises plasma colour filter, and described plasma colour filter is the through hole with periodic arrangement; Through hole, with square periodic arrangement, as shown in Figure 2, also can arrange for triangular shaped periods.And be not limited only to squares and triangles periodic arrangement.
As shown in Figure 3, through hole comprises circular port, octagon hole and square hole; And be not limited only to these shapes, the through hole of suitable shape can be selected as required.The size in the aperture of through hole is d, and pitch of holes is p; When through hole is circular, pore size d is round diameter; When through hole is square, pore size d is the square length of side; When through hole is octagon, pore size d is the distance between two limits being parallel to each other of octagon.
For the light of different wave length, need different aperture design: be set as follows according to the light of different wave length is most preferred:
Green wavelength is 550 nanometers: d=180 nanometer; P=340 nanometer;
Red light wavelength is 650 nanometers: d=240 nanometer; P=420 nanometer;
Blue light wavelength is 450 nanometers: d=140 nanometer; P=260 nanometer.
Fig. 4 (a) realizes colour imaging by using absorbability organic dyestuff filter for traditional imageing sensor, these optical filterings are positioned at image sensor pixel top, between lenticule and photoelectric detector PD, typical red, the green and blue three coloured light spectrums of transmission, but traditional organic dyestuff optical filtering limits the further reduction of Pixel Dimensions.Because they only transmit a part for visible spectrum, the intrinsic conversion efficiency of these filter is very low.
The plasma filtered light image sensor pixel of Fig. 4 (b) for implementing outward in pixel, but integrated plasma filter needs complicated aft-loaded airfoil step at imageing sensor top, this aobvious landing adds cost; In addition, how accurately alignment image transducer and plasma colour filter are also problem demanding prompt solutions.
The plasma image sensor pixel implemented in pixel that Fig. 4 (c) proposes for the present invention, directly on the metal level of pixel inside, implement plasma display filter, because the CMOS manufacturing process of the method and standard is compatible, do not need aft-loaded airfoil process, therefore significantly can reduce production cost.
Fig. 5 is pel array vertical view schematic diagram of the present invention, requires that have selected different hole shapes represents, defines Bayer formal distribution corresponding to different optical filterings.For the pixel region of 2x2, corresponding to the pixel arrange regional of 2x2 each in pel array, select two pixels at diagonal angle to realize the colour filter of green glow with manhole design, two other pixel is realized respectively to the colour filter of Red and blue light with square and octagon.Notice that now three kinds of through holes are all with consistent square periodic arrangement, also can carry out corresponding change.Through hole in the pixel region of each 2x2, with the periodic arrangement of same shape, can carry out the selection of shape of through holes and periodic arrangement shape according to actual needs.
Fig. 6 is image sensor chip Organization Chart of the present invention, specifically comprise the quick row parallel signal reading circuit be connected with pel array, described signal read circuits comprises row decoder, line driver, column decoder, row driver, row parallel gain adjustable amplifier, row parallel A/D converter, static random access memory, sense amplifier, Low Voltage Differential Signal reading module, static register, time-sequence control module and digital control current source;
Pel array is under the effect of row decoder and line driver, and the signal of pel array is read out line by line row parallel gain adjustable amplifier and row parallel A/D converter; The signal of row parallel A/D converter is through the control of column decoder and row driver, and grouping reads into static random access memory and sense amplifier, reads module by data pio chip eventually through high velocity, low pressure differential signal; Wherein, the work of time-sequence control module control lines decoder, line driver, column decoder and row driver; Static register controls the change in gain of row parallel gain adjustable amplifier; Digital control current source provides bias current to row parallel gain adjustable amplifier and row parallel A/D converter.
The above is only the preferred embodiment of the present invention, and the present invention is also applicable to the filter of other spectrum frequency range in addition to visible light, as infrared light etc.Be noted that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. the image sensor chip of pixel inner metal layer enforcement plasma colour filter, it is characterized in that, comprise pel array, pel array comprises some pixels, the metal level of each pixel inside comprises plasma colour filter, and described plasma colour filter is the through hole with periodic arrangement; The size in the aperture of described through hole is d, and pitch of holes is p;
Comprise the quick row parallel signal reading circuit be connected with pel array, described signal read circuits comprises row decoder, line driver, column decoder, row driver, row parallel gain adjustable amplifier, row parallel A/D converter, static random access memory, sense amplifier, Low Voltage Differential Signal reading module, static register, time-sequence control module and digital control current source;
Pel array is under the effect of row decoder and line driver, and the signal of pel array is read out line by line row parallel gain adjustable amplifier and row parallel A/D converter; The signal of row parallel A/D converter is through the control of column decoder and row driver, and grouping reads into static random access memory and sense amplifier, reads module by data pio chip eventually through high velocity, low pressure differential signal; Wherein, the work of time-sequence control module control lines decoder, line driver, column decoder and row driver; Static register controls the change in gain of row parallel gain adjustable amplifier; Digital control current source provides bias current to row parallel gain adjustable amplifier and row parallel A/D converter.
2. a kind of pixel inner metal layer implements the image sensor chip of plasma colour filter as claimed in claim 1, it is characterized in that, described arrays of openings mode comprises triangular shaped periods arrangement or foursquare periodic arrangement.
3. a kind of pixel inner metal layer implements the image sensor chip of plasma colour filter as claimed in claim 2, and it is characterized in that, described through hole comprises circular port, octagon hole and square hole.
4. a kind of pixel inner metal layer implements the image sensor chip of plasma colour filter as claimed in claim 3, and it is characterized in that, described through-hole aperture d and pitch of holes p is as follows according to the light settings of different wave length:
Green glow: d=180 nanometer; P=340 nanometer;
Ruddiness: d=240 nanometer; P=420 nanometer;
Blue light: d=140 nanometer; P=260 nanometer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931519A (en) * | 2019-11-18 | 2020-03-27 | 江苏集萃智能传感技术研究所有限公司 | Composite filtering structure for multispectral image sensor |
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| CN1941390A (en) * | 2005-09-29 | 2007-04-04 | 三星电子株式会社 | Pixel with two semiconductor layers, image sensor, and image processing system |
| CN102103224A (en) * | 2009-12-18 | 2011-06-22 | 乐金显示有限公司 | Color filter using surface plasmon, liquid crystal display device and method for fabricating the same |
| CN102981199A (en) * | 2012-11-13 | 2013-03-20 | 东北大学秦皇岛分校 | Surface plasma nanometer ring light filter |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941390A (en) * | 2005-09-29 | 2007-04-04 | 三星电子株式会社 | Pixel with two semiconductor layers, image sensor, and image processing system |
| CN102103224A (en) * | 2009-12-18 | 2011-06-22 | 乐金显示有限公司 | Color filter using surface plasmon, liquid crystal display device and method for fabricating the same |
| CN102981199A (en) * | 2012-11-13 | 2013-03-20 | 东北大学秦皇岛分校 | Surface plasma nanometer ring light filter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110931519A (en) * | 2019-11-18 | 2020-03-27 | 江苏集萃智能传感技术研究所有限公司 | Composite filtering structure for multispectral image sensor |
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