CN105552086A - Light sensing device and manufacturing method thereof - Google Patents
Light sensing device and manufacturing method thereof Download PDFInfo
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- CN105552086A CN105552086A CN201511000665.3A CN201511000665A CN105552086A CN 105552086 A CN105552086 A CN 105552086A CN 201511000665 A CN201511000665 A CN 201511000665A CN 105552086 A CN105552086 A CN 105552086A
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004020 conductor Substances 0.000 claims abstract description 180
- 238000006243 chemical reaction Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000010410 layer Substances 0.000 claims description 538
- 238000000034 method Methods 0.000 claims description 90
- 239000011241 protective layer Substances 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 67
- 239000003292 glue Substances 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 32
- 239000012212 insulator Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 10
- 238000001459 lithography Methods 0.000 description 54
- 238000005530 etching Methods 0.000 description 30
- 239000007769 metal material Substances 0.000 description 23
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 21
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 230000006698 induction Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 description 8
- 239000002041 carbon nanotube Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 7
- 229910001195 gallium oxide Inorganic materials 0.000 description 7
- 235000006408 oxalic acid Nutrition 0.000 description 7
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- KWXIRYKCFANFRC-UHFFFAOYSA-N [O--].[O--].[O--].[Al+3].[In+3] Chemical compound [O--].[O--].[O--].[Al+3].[In+3] KWXIRYKCFANFRC-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229960001296 zinc oxide Drugs 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 IGZO) Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000000481 breast Anatomy 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A light sensing device includes a substrate, an active element and a sensing element. The active device is disposed on the substrate and includes a first conductive layer, a gate insulating layer, a channel layer and a second conductive layer. The first conductor layer is arranged on the substrate, the grid electrode insulating layer is arranged on the substrate and covers the first conductor layer, the channel layer is arranged on the grid electrode insulating layer, and the second conductor layer is arranged on the channel layer. The sensing element is configured on the second conductor layer and comprises a first transparent electrode layer, a photoelectric conversion layer and a second transparent electrode layer. The first transparent electrode layer is arranged on and covers the second conductor layer, the photoelectric conversion layer is arranged on the first transparent electrode layer, and the second transparent electrode layer is arranged on the photoelectric conversion layer.
Description
Technical field
The invention relates to a kind of sensing apparatus and manufacture method thereof, and relate to a kind of light sensing apparatus and manufacture method thereof especially.
Background technology
Light sensing unit is widely used in the electronic installations such as mobile phone, flat computer or mobile computer.In addition, light sensing unit is also widely used in the use of medical diagnosis aid, and such as X-ray light sensing is used for the photography of human breast tissue.And mainly comprise a thin-film transistor (thinfilmtransistor, and a PIN diode (PINdiode) TFT), wherein thin-film transistor is as the switch element read, and PIN diode then plays the part of sensing element transform light energy being become electric signal.Traditionally; the manufacturing process of light sensing unit is form layer protective layer on thin-film transistor after; just form PIN diode (PIN layer); aforementioned protective layer is used for the channel layer of protective film transistor and the second conductor layer, to avoid hurting channel layer and the second conductor layer when follow-up formation PIN layer.Wherein, when thin-film transistor has etch stop layer (EtchStopLayer, ESL) during kenel, light sensing unit generally needs 12 road lithography technique (PhotolithographyandEtchingProcess, PEP) just making can be completed, and when thin-film transistor is back of the body channel etch (BackChannelEtch, BCE) kenel, the general 11 road lithography techniques that need just can complete making.But because PIN layer must be in electrical contact with the second conductor layer, therefore in order to effectively avoid the second conductor layer to come to harm when forming PIN layer, the width of the contact hole in insulating barrier must be less than PIN layer.Thus, the design of contact hole makes the PIN layer of part cannot be in electrical contact with the second conductor layer, thus limits the induction area of PIN diode.Therefore, how improving the manufacturing process of light sensing unit, avoid the induction area of PIN diode to be restricted, is the important topic that current pole must overcome.
Summary of the invention
The invention provides a kind of light sensing apparatus and manufacture method thereof, the induction area of sensing element can be promoted.
Light sensing apparatus of the present invention comprises substrate, active member and sensing element.Active member to be configured on substrate and to comprise the first conductor layer be arranged on substrate, is arranged at the gate insulator on the first conductor layer, is arranged at the channel layer on gate insulator and is arranged at the second conductor layer on channel layer.Sensing element to be configured on the second conductor layer and to comprise setting and the first transparent electrode layer covered on the second conductor layer, is arranged on the photoelectric conversion layer on the first transparent electrode layer and is arranged on the second transparent electrode layer on photoelectric conversion layer.
Wherein, this second conductor layer has a first end and one second end, and one of them of this first end and this second end extends to below this sensing element.
Wherein, this first transparent electrode layer contacts this second conductor layer.
Wherein, this second conductor layer and this first transparent electrode layer have one first opening jointly, and this first opening exposes this channel layer of part, and this first transparent electrode layer covers this second conductor layer completely.
Wherein, more comprise a protective layer, cover this sensing element of this active member and part, and there is one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
Wherein, this light sensing apparatus more comprises:
One leading protective layer, this first transparent electrode layer of cover part; And
One protective layer; cover this active member and this sensing element, this protective layer and this leading protective layer have one second opening jointly, and this protective layer has one the 3rd opening; this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
Wherein, this light sensing apparatus more comprises:
One etch stop layer, be arranged on this channel layer, and have expose part this channel layer one first contact hole contact hole with one second, wherein, part this first end and this second end respectively by this first contact hole and this second contact hole contact with this channel layer; And
One protective layer, is arranged on this first transparent electrode layer, and has one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
Wherein, this light sensing apparatus more comprises one the 3rd transparent electrode layer, is arranged on this protective layer, and wherein the 3rd transparent electrode layer is contacted with this second transparent electrode layer by glue the 3rd opening.
Wherein, this light sensing apparatus more comprises one the 3rd conductor layer, is arranged on this protective layer, wherein; 3rd conductor layer is contacted with this first transparent electrode layer by this second opening of glue, and the 3rd conductor layer overlaps at least partly with this active member on upright projection direction.
The manufacture method of light sensing apparatus of the present invention comprises the following steps.Form the first conductor layer on substrate.Form gate insulator on the first conductor layer.Form channel layer on gate insulator.Form the second conductor layer on channel layer, wherein the second conductor layer has first end and the second end, and the first conductor layer, gate insulator, channel layer and the second conductor layer form active member.Form the first transparent electrode layer on the second conductor layer.Form photoelectric conversion layer on the first transparent electrode layer.Form the second transparent electrode layer on photoelectric conversion layer, wherein the first transparent electrode layer, photoelectric conversion layer and the second transparent electrode layer form sensing element, and one of them of first end and the second end extends to below sensing element.
Wherein, this second conductor layer and this first transparent electrode layer carry out Patternized technique with same photomask and formed, and this second conductor layer and this first transparent electrode layer form one first opening jointly, exposes this channel layer of part.
Wherein, after this second transparent electrode layer of formation, more comprise:
Form a protective layer, wherein this protective layer has one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
Wherein, before this second transparent electrode layer of formation, the leading protective layer of formation one is more comprised; And after this second transparent electrode layer of formation; more comprise formation one protective layer; wherein; this protective layer and this leading protective layer have one second opening jointly; and this protective layer has one the 3rd opening; this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
Wherein, before this second conductor layer of formation, more be included on this channel layer and form an etch stop layer, wherein this etch stop layer have expose part this channel layer one first contact hole contact hole with one second, and part this first end and this second end respectively by this first contact hole and this second contact hole contact with this channel layer; And after this second transparent electrode layer of formation; more comprise formation one protective layer; wherein this protective layer has one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
Wherein, after this protective layer of formation, more comprise: on this protective layer, form one the 3rd transparent electrode layer, wherein, the 3rd transparent electrode layer is contacted with this second transparent electrode layer by glue the 3rd opening; And one the 3rd conductor layer is formed on this protective layer, wherein, the 3rd conductor layer is contacted with this first transparent electrode layer by this second opening of glue, and the 3rd conductor layer overlaps at least partly with this active member on upright projection direction.
Wherein, this photoelectric conversion layer is formed on this first transparent electrode layer and form the method for this second transparent electrode layer on this photoelectric conversion layer and comprise: on this substrate, sequentially form a N type semiconductor material layer, an intrinsic semiconductor material layer, a P type semiconductor material layer and a transparent conductor material layer; This transparent conductor material layer of patterning, to form this second transparent electrode layer; And this N type semiconductor material layer of patterning, this intrinsic semiconductor material layer and this P type semiconductor material layer, to form a n type semiconductor layer of mutual storehouse, extrinsic semiconductor's layer and a p type semiconductor layer.
Based on above-mentioned; in light sensing apparatus of the present invention; by glue second conductor layer is provided with the first transparent electrode layer; make the first transparent electrode layer that the second conductor layer can be protected not to be damaged in the technique forming photoelectric conversion layer; and make photoelectric conversion layer completely and directly contact with the first transparent electrode layer, can thus promote the induction area of sensing element.
For above-mentioned feature and advantage of the present invention can be become apparent, execution mode cited below particularly, and coordinate institute's accompanying drawings to be described in detail below.
Brief description of drawingsfig
Figure 1A to Fig. 1 K is the generalized section of the manufacturing process of the light sensing apparatus of the first execution mode of the present invention.
Fig. 2 A to Fig. 2 G is the generalized section of the manufacturing process of the light sensing apparatus of the second execution mode of the present invention.
Fig. 3 A to Fig. 3 K is the generalized section of the manufacturing process of the light sensing apparatus of the 3rd execution mode of the present invention.
Wherein, Reference numeral:
10,20,30: light sensing apparatus
100: substrate
102a: first end
102b: the second end
104a:N type semiconductor material layer
104b: intrinsic semiconductor material layer
104c:P type semiconductor material layer
106a:N type semiconductor layer
106b: extrinsic semiconductor's layer
106c:P type semiconductor layer
BP1, BP2: protective layer
CH: channel layer
ES: etch stop layer
FBP: leading protective layer
GI: gate insulator
M1: the first conductor layer
M2: the second conductor layer
M2 ': conductor material layer
M3: the three conductor layer
OP1: the first opening
OP2, OP2 ': the second opening
OP3: the three opening
OP: opening
PS: photoelectric conversion layer
S1: bottom surface
S2: end face
SE: sensing element
TE1: the first transparent electrode layer
TE1 ': transparent electrode material layer
TE2: the second transparent electrode layer
TE3: the three transparent electrode layer
TFT: active member
V1: the first contact hole
V2: the second contact hole
Embodiment
Figure 1A to Fig. 1 K is the generalized section of the manufacturing process of the light sensing apparatus of the first execution mode of the present invention.
First, please refer to Figure 1A, on substrate 100, form the first conductor layer M1.In the present embodiment, substrate 100 can be rigid substrates, such as glass substrate, quartz base plate or silicon substrate, can be maybe flexible base plate, such as polymeric substrates or plastic base.
In the present embodiment, the first conductor layer M1 is grid.Based on the consideration of conductivity, the first conductor layer M1 uses metal material.But, the present invention is not limited to this, first conductor layer M1 also can use other electric conducting material beyond metal material, such as: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or the stack layer of metal material and other electric conducting material.In addition, in the present embodiment, the first conductor layer M1 is formed by glue first lithography technique.Other one carries, and in the present embodiment, while formation first conductor layer M1, also can form the gate line (not illustrating) be connected with the first conductor layer M1, and meaning i.e. the first conductor layer M1 and gate line belongs to same rete.
Then, please refer to Figure 1B, on the first conductor layer M1, form gate insulator GI.Gate insulator GI can utilize physical vaporous deposition or chemical vapour deposition technique comprehensively to deposit on the substrate 100 usually.The material of gate insulator GI is such as silica (SiO
x), silicon nitride (SiN
x) or the inorganic material such as silicon oxynitride.
Then, on gate insulator GI, channel layer CH is formed.Specifically, the material of channel layer CH can be amorphous silicon, polysilicon or other semi-conducting material, can be maybe the oxide semiconductor material of indium tin zinc oxide (Indium-Tin-ZincOxide, ITZO) etc.In addition, in the present embodiment, channel layer CH is formed by glue second lithography technique.
Other one carry be, form channel layer CH on gate insulator GI after, more can be included in the gate insulator GI in the surrounding zone (non-display area) of substrate 100 and form a contact hole (not illustrating), to form the connecting line in order to be connected with external circuit in subsequent technique, wherein external circuit is such as driving chip or flexible printer circuit (flexibleprintedcircuit, FPC).Specifically, described contact hole is formed by glue the 3rd road lithography technique.
Then, please refer to Fig. 1 C, on substrate 100, sequentially form conductor material layer M2 ' and transparent electrode material layer TE1 '.Based on the consideration of conductivity, conductor material layer M2 ' uses metal material.But, the present invention is not limited to this, conductor material layer M2 ' also can use other electric conducting material beyond metal material, such as: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or the stack layer of metal material and other electric conducting material.The material of transparent electrode material layer TE1 ' comprises tin indium oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AlZO), aluminium oxide indium, indium oxide (InO), gallium oxide (galliumoxide, GaO), CNT (carbon nano-tube), nano-Ag particles, thickness are less than the metal or alloy of 60 nanometers (nm), organic transparent conductive material or other transparent conductive material be applicable to.
Then, please refer to Fig. 1 D, on substrate 100, form the first transparent electrode layer TE1.Specifically, in the present embodiment, the manufacture method of the first transparent electrode layer TE1 comprises: utilize one the 4th road photomask to carry out lithography technique, so that transparent electrode material layer TE1 ' patterning is formed the first transparent electrode layer TE1.In addition, in the present embodiment, be such as wet etch step in order to the etching step formed in the lithography technique of the first transparent electrode layer TE1, etching solution is such as aluminic acid.
Then, please refer to Fig. 1 E, on substrate 100, form the second conductor layer M2.In the present embodiment, the manufacture method of the second conductor layer M2 comprises: same utilization carries out lithography technique in order to same the photomask (i.e. described 4th road photomask) forming the first transparent electrode layer TE1, so that conductor material layer M2 ' patterning is formed the second conductor layer M2, wherein the second conductor layer M2 has first end 102a and the second end 102b.In the present embodiment, the first conductor layer M1, gate insulator GI, channel layer CH and the second conductor layer M2 form active member TFT.Specifically, in the present embodiment, the first end 102a of the second conductor layer M2 is in order to the source electrode as active member TFT, and the second end 102b is in order to the drain electrode as active member TFT.In addition, in the present embodiment, active member TFT belongs to back of the body channel etch kenel.
Furthermore, the first transparent electrode layer TE1 contacts the second conductor layer M2, and the second conductor layer M2 has identical pattern with the first transparent electrode layer TE1.In other words, the first transparent electrode layer TE1 covers this second conductor layer M2 completely, meaning and aforementioned both size is identical in fact, but not as limit.In addition, in the present embodiment, can be wet etch step or dry etch steps in order to the etching step formed in the lithography technique of the second conductor layer M2, wherein when etching step is wet etch step, etching solution be such as oxalic acid.
From structure viewpoint, in the present embodiment, second conductor layer M2 and the first transparent electrode layer TE1 forms the first opening OP1 exposing passage portion layer CH jointly, and namely the first end 102a of the second conductor layer M2 is positioned at the relative both sides of the first opening OP1 with the second end 102b.
Other one carries, and in the present embodiment, while formation second conductor layer M2, also can form the data wire (not illustrating) be connected with the first end 102a of the second conductor layer M2, meaning namely the second conductor layer M2 belong to same rete with data wire.
Due to, the second conductor layer M2 and the first transparent electrode layer TE1 uses has selective etch, can guarantee that the second conductor layer M2 can not come to harm when therefore etching the first transparent electrode layer TE1.For example, be all wet etch step in order to the etching step formed in the lithography technique of the second conductor layer M2 and the first transparent electrode layer TE1, wherein the second conductor layer M2 uses aluminic acid the first transparent electrode layer TE1 uses oxalic acid as etching solution as etching solution; Or in order to form the second conductor layer M2 lithography technique in etching step be dry etch steps, then wet etch step in order to the etching step formed in the lithography technique of the first transparent electrode layer TE1, and use oxalic acid as etching solution, but the present invention is not as limit.
Then, referring to Fig. 1 F and Fig. 1 G, on the first transparent electrode layer TE1, form photoelectric conversion layer PS and the second transparent electrode layer TE2, wherein the material of the second transparent electrode layer TE2 comprises tin indium oxide, indium zinc oxide, aluminum zinc oxide, aluminium oxide indium, indium oxide, gallium oxide, CNT (carbon nano-tube), nano-Ag particles, thickness is less than the metal or alloy of 60 nanometers (nm), organic transparent conductive material or other transparent conductive material be applicable to.Specifically, the manufacture method of photoelectric conversion layer PS and the second transparent electrode layer TE2 comprises the following steps: first, please also refer to Fig. 1 F, on substrate 100, sequentially form N type semiconductor material layer 104a, intrinsic semiconductor material layer 104b, P type semiconductor material layer 104c and transparent conductor material layer (not illustrating).In the present embodiment, the material of intrinsic semiconductor material layer 104b comprises intrinsic amorphous silicon, and wherein conventional process gas comprises hydrogen (H
2) and silicomethane (SiH
4).The material of N type semiconductor material layer 104a comprises N-type doped amorphous silicon, and wherein conventional process gas comprises hydrogen phosphide (PH
3), hydrogen (H
2) and silicomethane (SiH
4).The material of P type semiconductor material layer 104c comprises P type doped amorphous silicon, and wherein conventional process gas comprises trimethylborate, hydrogen (H
2) and silicomethane (SiH
4).The material of transparent conductor material layer comprises indium tin oxide, indium-zinc oxide, aluminium zinc oxide or other transparent conductive material be applicable to, and right above-mentioned material is also not used to limit the present invention.
Then, transparent conductor material layer described in patterning, with formation second transparent electrode layer TE2 (as shown in fig. 1f) on P type semiconductor material layer 104c.Specifically, in the present embodiment, the second transparent electrode layer TE2 is formed by glue the 5th road lithography technique, and the etching step wherein in the 5th road lithography technique is such as wet etch step, and etching solution such as comprises oxalic acid or aluminic acid.
Afterwards, please refer to Fig. 1 G, patterning N type semiconductor material layer 104a, intrinsic semiconductor material layer 104b and P type semiconductor material layer 104c, with formed comprise mutual storehouse n type semiconductor layer 106a, extrinsic semiconductor layer 106b and p type semiconductor layer 106c photoelectric conversion layer PS.In other words, in the present embodiment, the photoelectric conversion layer PS p type semiconductor layer 106c that comprises n type semiconductor layer 106a, be configured in the extrinsic semiconductor layer 106b on n type semiconductor layer 106a and be configured on extrinsic semiconductor layer 106b.Specifically, in the present embodiment, photoelectric conversion layer PS is formed by glue the 6th road lithography technique, etching step wherein in the 6th road lithography technique is such as dry etch steps, and dry etching gases comprises the gases such as sulphur hexafluoride (SF6) and chlorine (Cl2).In addition, photoelectric conversion layer PS has the bottom surface S1 contacted with the first transparent electrode layer TE1 and the end face S2 contacted with the second transparent electrode layer TE2.
As mentioned above, in the present embodiment, second transparent electrode layer TE2 was formed before formation photoelectric conversion layer PS, can avoid whereby because first defining photoelectric conversion layer PS, and make to have impact on when carrying out lithography technique to transparent conductor material layer the quality of extrinsic semiconductor layer 106b and the first transparent electrode layer TE1 and the second conductor layer M2 is damaged.From another viewpoint, the etching gas used in the 6th road lithography technique can not react with the first transparent electrode layer TE1 and channel layer CH.That is, in the present embodiment, by glue formation first transparent electrode layer TE1 on the second conductor layer M2, the second conductor layer M2 can be avoided to be damaged in the dry etch steps in order to form photoelectric conversion layer PS.
In addition, in the present embodiment, the first transparent electrode layer TE1, photoelectric conversion layer PS and the second transparent electrode layer TE2 form sensing element SE.Specifically, in the present embodiment, the part contacted with photoelectric conversion layer PS in the first transparent electrode layer TE1 is in order to the bottom electrode as sensing element SE, and the second transparent electrode layer TE2 is in order to the top electrode as sensing element SE.
Furthermore, as mentioned before, because the second conductor layer M2 and the first transparent electrode layer TE1 uses same photomask (i.e. the 4th road photomask) by glue and formed, and the material of the second conductor layer M2 and the first transparent electrode layer TE1 all has conductivity, and sensing element SE is formed on the second conductor layer M2, the meaning i.e. second end 102b of the second conductor layer M2 extends to below sensing element SE, therefore the drain electrode (i.e. the second end 102b) of active member TFT is electrically connected with the bottom electrode (i.e. the first transparent electrode layer TE1 of part) of sensing element SE.
What deserves to be explained is, as mentioned before, because the first transparent electrode layer TE1 can protect the second conductor layer M2 not to be damaged when forming photoelectric conversion layer PS, meaning i.e. the first transparent electrode layer TE1 is as a kind of etch protection layer, and the first transparent electrode layer TE1 of part is able to the bottom electrode as sensing element SE, therefore photoelectric conversion layer PS can completely and directly contact with the first transparent electrode layer TE1, and the induction area of the bottom of sensing element SE (i.e. the contact area of photoelectric conversion layer PS and the first transparent electrode layer TE1) can be increased, that is the induction area of the bottom of sensing element SE equals in fact the area of the bottom surface S1 of photoelectric conversion layer PS.
Then; please refer to Fig. 1 H; protective layer BP1 is formed on substrate 100; to cover active member TFT and sensing element SE; wherein protective layer BP1 has the second opening OP2 and the 3rd opening OP3; first transparent electrode layer TE1 of the second opening OP2 expose portion, and the second transparent electrode layer TE2 of the 3rd opening OP3 expose portion.Specifically, protective layer BP1 is formed by glue the 7th road lithography technique.The material of protective layer BP1 comprises inorganic material or other organic materials such as silica, silicon nitride or silicon oxynitride.
Then, please refer to Fig. 1 I, formation the 3rd transparent electrode layer TE3 on protective layer BP1, wherein the 3rd transparent electrode layer TE3 is contacted with the second transparent electrode layer TE2 by glue the 3rd opening OP3.Specifically, the 3rd transparent electrode layer TE3 is formed by glue the 8th road lithography technique.The material of the 3rd transparent electrode layer TE3 comprises tin indium oxide, indium zinc oxide, aluminum zinc oxide, aluminium oxide indium, indium oxide, gallium oxide, CNT (carbon nano-tube), nano-Ag particles, thickness are less than the metal or alloy of 60 nanometers (nm), organic transparent conductive material or other transparent conductive material be applicable to.In addition, in the present embodiment, the 3rd transparent electrode layer TE3 can be used as the connecting line in order to be connected with external circuit.
Then, please refer to Fig. 1 J, formation the 3rd conductor layer M3 on protective layer BP1, wherein the 3rd conductor layer M3 is contacted with the first transparent electrode layer TE1 by glue second opening OP2.Specifically, the 3rd conductor layer M3 is formed by glue the 9th road lithography technique.The material of the 3rd conductor layer M3 can be metal material, can be maybe the electric conducting material of alloy, the nitride of metal material, the oxide of metal material, the nitrogen oxide of metal material or the stack layer of metal material and other electric conducting material etc.In addition, the 3rd conductor layer M3 overlaps at least partly with active member TFT on upright projection direction.Specifically, in the present embodiment, the 3rd conductor layer M3 at least overlaps with the channel layer CH of active member TFT on upright projection direction.This is because the material of channel layer CH is generally the semi-conducting material with light transfer characteristic, if channel layer CH is not effectively covered, then easily produce light carrier at channel layer CH when irradiation, light carrier can make channel conductive, and loses the function of switch by making active member TFT close.
Then, please refer to Fig. 1 K, after having made the 3rd conductor layer M3, more can comprise on substrate 100 and form protective layer BP2.Protective layer BP2 covers active member TFT and sensing element SE, in order to prevent active member TFT and sensing element SE to be subject to the impacts such as extraneous moisture, heat and noise, and protects active member TFT and sensing element SE to avoid the destruction of external force.Protective layer BP2 can utilize physical vaporous deposition or chemical vapour deposition technique comprehensively to deposit on the substrate 100 usually.The material of protective layer BP2 is such as inorganic material or the organic materials such as silica, silicon nitride, silicon oxynitride.
Other one carry be; on substrate 100 comprehensively after Deposition of protective layer BP2; more can be included in the protective layer BP2 being arranged in surrounding zone (non-display area) and form a contact hole (not illustrating), as connection to be such as the use of the external circuit of driving chip or flexible printer circuit etc.Specifically, described contact hole is formed by glue the tenth road lithography technique.
Based on above-mentioned, after carrying out above-mentioned (Figure 1A to Fig. 1 K) in steps, the making of the light sensing apparatus 10 of the first execution mode of the present invention can be completed.In addition, in the above-described first embodiment, light sensing apparatus 10 can complete making by ten road lithography techniques.That is, compared with the prior art light sensing apparatus comprising the active member carrying on the back channel etch kenel, light sensing apparatus 10 can be manufactured by the lithography technique number that glue is less, can reduce the use of photomask whereby and reduce process complexity and process costs.
Fig. 2 A to Fig. 2 G is the generalized section of the manufacturing process of the light sensing apparatus of the second execution mode of the present invention.Wherein, the step of Fig. 2 A for carrying out after hookup 1E.In addition, second execution mode and identical or similar component in the first execution mode are adopted identical material or method to carry out, therefore hereinafter will repeat no more for the description identical with the first execution mode, and be mainly described with the difference place between the second execution mode and the first execution mode.
First, please refer to Fig. 2 A, on substrate 100, form leading protective layer FBP, with the first transparent electrode layer TE1 of cover part.Specifically, leading protective layer FBP has an opening OP, to expose the first transparent electrode layer TE1 of part.In the present embodiment, leading protective layer FBP is formed by glue the 5th road lithography technique.The material of leading protective layer FBP comprises inorganic material or other organic materials such as silica, silicon nitride or silicon oxynitride.
Then, referring to Fig. 2 B and Fig. 2 C, on the first transparent electrode layer TE1, photoelectric conversion layer PS and the second transparent electrode layer TE2 is formed.Specifically, in the present embodiment, photoelectric conversion layer PS be formed in leading protective layer FBP opening OP in and do not contact with leading protective layer FBP.In addition, in the present embodiment, the second transparent electrode layer TE2 is formed by glue the 6th road lithography technique, and photoelectric conversion layer PS is formed by glue the 7th road lithography technique.In addition, photoelectric conversion layer PS has the bottom surface S1 contacted with the first transparent electrode layer TE1 and the end face S2 contacted with the second transparent electrode layer TE2.
It is worth mentioning that, as described in the first embodiment, formed before photoelectric conversion layer PS by glue second transparent electrode layer TE2, make the quality that can avoid have impact on extrinsic semiconductor layer 106b when carrying out lithography technique to transparent conductor material layer and the first transparent electrode layer TE1 and the second conductor layer M2 is damaged.In addition, because the etching gas used in the 7th road lithography technique can not react with the first transparent electrode layer TE1 and channel layer CH, therefore by glue formation first transparent electrode layer TE1 on the second conductor layer M2, the second conductor layer M2 can be avoided to be damaged in the dry etch steps in order to form photoelectric conversion layer PS.In addition, because the first transparent electrode layer TE1 can protect the second conductor layer M2 not to be damaged when photoelectric conversion layer PS is formed, and the first transparent electrode layer TE1 of part is able to the bottom electrode as sensing element SE, therefore photoelectric conversion layer PS can completely and directly contact with the first transparent electrode layer TE1, and the induction area of the bottom of sensing element SE (i.e. the contact area of photoelectric conversion layer PS and the first transparent electrode layer TE1) can be increased, that is the induction area of the bottom of sensing element SE equals in fact the area of the bottom surface S1 of photoelectric conversion layer PS.
Then, please refer to Fig. 2 D, on substrate 100, form protective layer BP1.Specifically; in the present embodiment; protective layer BP1 and leading protective layer FBP has the second opening OP2 ' jointly; and protective layer BP1 also has the 3rd opening OP3; wherein the first transparent electrode layer TE1 of the second opening OP2 ' expose portion, and the second transparent electrode layer TE2 of the 3rd opening OP3 expose portion.In addition, in the present embodiment, protective layer BP1 is formed by glue the 8th road lithography technique.
Then, please refer to Fig. 2 E, formation the 3rd transparent electrode layer TE3 on protective layer BP1, wherein the 3rd transparent electrode layer TE3 is contacted with the second transparent electrode layer TE2 by glue the 3rd opening OP3.Specifically, in the present embodiment, the 3rd transparent electrode layer TE3 is formed by glue the 9th road lithography technique.
Then, please refer to Fig. 2 F, formation the 3rd conductor layer M3 on protective layer BP1.Specifically, in the present embodiment, the 3rd conductor layer M3 is contacted with the first transparent electrode layer TE1 by glue second opening OP2 '.In addition, in the present embodiment, the 3rd conductor layer M3 is formed by glue the tenth road lithography technique.
Then, please refer to Fig. 2 G, after having made the 3rd conductor layer M3, more comprised on substrate 100 and form protective layer BP2.As described in the first embodiment; on substrate 100 comprehensively after Deposition of protective layer BP2; more can be included in the protective layer BP2 being arranged in surrounding zone (non-display area) and form a contact hole (not illustrating), as connection to be such as the use of the external circuit of driving chip or flexible printer circuit etc.Specifically, in the present embodiment, described contact hole is formed by glue the 10th one lithography technique.
Based on above-mentioned, after carrying out above-mentioned (Fig. 2 A to Fig. 2 G) in steps, the making of the light sensing apparatus 20 of the second execution mode of the present invention can be completed.In addition, in the above-described 2nd embodiment, make although light sensing apparatus 20 needs to carry out 10 one lithography techniques by glue, but the first transparent electrode layer TE1 with conductivity is set by glue on the second conductor layer M2, the induction area of the sensing element SE in light sensing apparatus 20 is increased.
Fig. 3 A to Fig. 3 K is the generalized section of the manufacturing process of the light sensing apparatus of the 3rd execution mode of the present invention.Wherein, the step of Fig. 3 A for carrying out after the Figure 1A that continues.In addition, 3rd execution mode and identical or similar component in the first execution mode are adopted identical material or method to carry out, therefore hereinafter will repeat no more for the description identical with the first execution mode, and be mainly described with the difference place between the 3rd execution mode and the first execution mode.
First, please refer to Fig. 3 A, on the first conductor layer M1, sequentially form gate insulator GI and channel layer CH.Specifically, in the present embodiment, the material of channel layer CH comprises indium oxide gallium zinc (Indium-Gallium-ZincOxide, IGZO), zinc oxide, tin oxide (SnO), indium zinc oxide, gallium oxide zinc (Gallium-ZincOxide, GZO), the oxide semiconductor material of zinc-tin oxide (Zinc-TinOxide, ZTO) or tin indium oxide etc.In addition, in the present embodiment, channel layer CH is formed by glue second lithography technique.
Other one carry be, in the present embodiment, form channel layer CH on gate insulator GI after, more can be included in the gate insulator GI in the surrounding zone (non-display area) of substrate 100 and form a contact hole (not illustrating), to form the connecting line in order to be connected with external circuit in subsequent technique, wherein external circuit is such as driving chip or flexible printer circuit.Specifically, described contact hole is formed by glue the 3rd road lithography technique.
Then, please refer to Fig. 3 B, on channel layer CH, form etch stop layer ES, wherein etch stop layer ES has the first contact hole V1 exposing passage portion layer CH and contacts hole V2 with second.Specifically, in the present embodiment, etch stop layer ES is formed by glue the 4th road lithography technique.The material of etch stop layer ES comprises silica etc.
Then, please refer to Fig. 3 C, on substrate 100, sequentially form conductor material layer M2 ' and transparent electrode material layer TE1 '.Based on the consideration of conductivity, conductor material layer M2 ' uses metal material.But, the present invention is not limited to this, conductor material layer M2 ' also can use other electric conducting material beyond metal material, such as: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or the stack layer of metal material and other electric conducting material.The material of transparent electrode material layer TE1 ' comprises tin indium oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AlZO), aluminium oxide indium, indium oxide (InO), gallium oxide (galliumoxide, GaO), CNT (carbon nano-tube), nano-Ag particles, thickness are less than the metal or alloy of 60 nanometers (nm), organic transparent conductive material or other transparent conductive material be applicable to.
Then, please refer to Fig. 3 D, on substrate 100, form the first transparent electrode layer TE1.Specifically, in the present embodiment, the manufacture method of the first transparent electrode layer TE1 comprises: utilize one the 5th road photomask to carry out lithography technique, so that transparent electrode material layer TE1 ' patterning is formed the first transparent electrode layer TE1.In addition, in the present embodiment, be such as wet etch step in order to the etching step formed in the lithography technique of the first transparent electrode layer TE1, etching solution is such as aluminic acid.
Then, please refer to Fig. 3 E, on substrate 100, form the second conductor layer M2.Specifically, in the present embodiment, the first end 102a of part and the second end 102b of part contacts by the first contact hole V1 and second contact hole V2 with channel layer CH respectively.That is, in the present embodiment, active member TFT source electrode and drain electrode respectively by first contact hole V1 and second contact hole V2 contact with channel layer CH.Specifically, in the present embodiment, active member TFT belongs to etch stop layer kenel.
In addition, the first transparent electrode layer TE1 contacts the second conductor layer M2, and the second conductor layer M2 has identical pattern with the first transparent electrode layer TE1.In other words, the first transparent electrode layer TE1 covers this second conductor layer M2 completely, meaning and aforementioned both size is identical in fact.Specifically, in the present embodiment, the manufacture method of the second conductor layer M2 comprises: same utilization carries out lithography technique, so that conductor material layer M2 ' patterning is formed the second conductor layer M2 in order to same the photomask (i.e. described 5th road photomask) forming the first transparent electrode layer TE1.Furthermore, in the present embodiment, can be wet etch step or dry etch steps in order to the etching step formed in the lithography technique of the second conductor layer M2, wherein when etching step is wet etch step, etching solution be such as oxalic acid.From another viewpoint, the second conductor layer M2 and the first transparent electrode layer TE1 forms the first opening OP1 exposing partially-etched stop layer ES jointly, and namely the first end 102a of the second conductor layer M2 is positioned at the relative both sides of the first opening OP1 with the second end 102b.
Due to, the second conductor layer M2 and the first transparent electrode layer TE1 uses has selective etch, can guarantee that the second conductor layer M2 can not come to harm when therefore etching the first transparent electrode layer TE1.For example, be all wet etch step in order to the etching step formed in the lithography technique of the second conductor layer M2 and the first transparent electrode layer TE1, wherein the second conductor layer M2 uses aluminic acid the first transparent electrode layer TE1 uses oxalic acid as etching solution as etching solution; Or in order to form the second conductor layer M2 lithography technique in etching step be dry etch steps, then wet etch step in order to the etching step formed in the lithography technique of the first transparent electrode layer TE1, and use oxalic acid as etching solution, but the present invention is not as limit.
Then, referring to Fig. 3 F and Fig. 3 G, on the first transparent electrode layer TE1, photoelectric conversion layer PS and the second transparent electrode layer TE2 is formed.Specifically, in the present embodiment, the second transparent electrode layer TE2 is formed by glue the 6th road lithography technique, and photoelectric conversion layer PS is formed by glue the 7th road lithography technique.In addition, photoelectric conversion layer PS has the bottom surface S1 contacted with the first transparent electrode layer TE1 and the end face S2 contacted with the second transparent electrode layer TE2.
It is worth mentioning that, as described in the first embodiment, formed before photoelectric conversion layer PS by glue second transparent electrode layer TE2, make the quality that can avoid have impact on extrinsic semiconductor layer 106b when carrying out lithography technique to transparent conductor material layer and the first transparent electrode layer TE1 and the second conductor layer M2 is damaged.In addition, because the etching gas used in the 7th road lithography technique can not react with the first transparent electrode layer TE1 and channel layer CH, therefore by glue formation first transparent electrode layer TE1 on the second conductor layer M2, the second conductor layer M2 can be avoided to be damaged in the dry etch steps in order to form photoelectric conversion layer PS.In addition, because the first transparent electrode layer TE1 can protect the second conductor layer M2 not to be damaged when photoelectric conversion layer PS is formed, and the first transparent electrode layer TE1 of part is able to the bottom electrode as sensing element SE, therefore photoelectric conversion layer PS can completely and directly contact with the first transparent electrode layer TE1, and the induction area of the bottom of sensing element SE (i.e. the contact area of photoelectric conversion layer PS and the first transparent electrode layer TE1) can be increased, that is the induction area of the bottom of sensing element SE equals in fact the area of the bottom surface S1 of photoelectric conversion layer PS.
Then; please refer to Fig. 3 H, form protective layer BP1 on substrate 100, wherein protective layer BP1 has the second opening OP2 and the 3rd opening OP3; first transparent electrode layer TE1 of the second opening OP2 expose portion, and the second transparent electrode layer TE2 of the 3rd opening OP3 expose portion.Specifically, in the present embodiment, protective layer BP1 is formed by glue the 8th road lithography technique.
Then, please refer to Fig. 3 I, formation the 3rd transparent electrode layer TE3 on protective layer BP1, wherein the 3rd transparent electrode layer TE3 is contacted with the second transparent electrode layer TE2 by glue the 3rd opening OP3.Specifically, in the present embodiment, the 3rd transparent electrode layer TE3 is formed by glue the 9th road lithography technique.
Then, please refer to Fig. 3 J, formation the 3rd conductor layer M3 on protective layer BP1, wherein the 3rd conductor layer M3 is contacted with the first transparent electrode layer TE1 by glue second opening OP2.Specifically, the 3rd conductor layer M3 is formed by glue the tenth road lithography technique.
Then, please refer to Fig. 3 K, after having made the 3rd conductor layer M3, more comprised on substrate 100 and form protective layer BP2.As described in the first embodiment; on substrate 100 comprehensively after Deposition of protective layer BP2; more can be included in the protective layer BP2 being arranged in surrounding zone (non-display area) and form a contact hole (not illustrating), as connection to be such as the use of the external circuit of driving chip or flexible printer circuit etc.Specifically, in the present embodiment, described contact hole is formed by glue the 10th one lithography technique.
Based on above-mentioned, after carrying out above-mentioned (Fig. 3 A to Fig. 3 K) in steps, the making of the light sensing apparatus 30 of the 3rd execution mode of the present invention can be completed.In addition, in the above-described 3rd embodiment, light sensing apparatus 30 can complete making by 10 one lithography techniques.That is, with comprise etch stop layer kenel active member known light sensing apparatus compared with, light sensing apparatus 30 can be manufactured by the lithography technique number that glue is less, can reduce the use of photomask whereby and reduce process complexity and process costs.
In sum; in light sensing apparatus of the present invention; by glue second conductor layer is provided with the first transparent electrode layer; and the first transparent electrode layer of part is as the bottom electrode of sensing element; make the first transparent electrode layer that the second conductor layer can be protected not to be damaged in the technique forming photoelectric conversion layer; and make photoelectric conversion layer completely and directly contact with the first transparent electrode layer, can thus promote the induction area of sensing element.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art can make various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claims in the present invention.
Claims (16)
1. a light sensing apparatus, is characterized in that, comprising:
One substrate;
One active member, on the substrate, wherein this active member comprises in configuration:
One first conductor layer, is arranged on this substrate;
One gate insulator, to be arranged on this substrate and to be covered on this first conductor layer;
One channel layer, is arranged on this gate insulator; And
One second conductor layer, is arranged on this channel layer; And
One sensing element, be configured on this second conductor layer, wherein this sensing element comprises:
One first transparent electrode layer, arranges and covers on this second conductor layer;
One photoelectric conversion layer, is arranged on this first transparent electrode layer; And
One second transparent electrode layer, is arranged on this photoelectric conversion layer.
2. light sensing apparatus according to claim 1, is characterized in that, this second conductor layer has a first end and one second end, and one of them of this first end and this second end extends to below this sensing element.
3. light sensing apparatus according to claim 2, is characterized in that, this first transparent electrode layer contacts this second conductor layer.
4. light sensing apparatus according to claim 2, it is characterized in that, this second conductor layer and this first transparent electrode layer have one first opening jointly, and this first opening exposes this channel layer of part, and this first transparent electrode layer covers this second conductor layer completely.
5. light sensing apparatus according to claim 4; it is characterized in that; more comprise a protective layer; cover this sensing element of this active member and part; and there is one second opening and one the 3rd opening; this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
6. light sensing apparatus according to claim 4, is characterized in that, more comprises:
One leading protective layer, this first transparent electrode layer of cover part; And
One protective layer; cover this active member and this sensing element, this protective layer and this leading protective layer have one second opening jointly, and this protective layer has one the 3rd opening; this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
7. light sensing apparatus according to claim 4, is characterized in that, more comprises:
One etch stop layer, be arranged on this channel layer, and have expose part this channel layer one first contact hole contact hole with one second, wherein, part this first end and this second end respectively by this first contact hole and this second contact hole contact with this channel layer; And
One protective layer, is arranged on this first transparent electrode layer, and has one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
8. the light sensing apparatus according to any one in claim 5 to 7, is characterized in that, more comprises one the 3rd transparent electrode layer, is arranged on this protective layer, and wherein the 3rd transparent electrode layer is contacted with this second transparent electrode layer by glue the 3rd opening.
9. the light sensing apparatus according to any one in claim 5 to 7; it is characterized in that; more comprise one the 3rd conductor layer; be arranged on this protective layer; wherein; 3rd conductor layer is contacted with this first transparent electrode layer by this second opening of glue, and the 3rd conductor layer overlaps at least partly with this active member on upright projection direction.
10. a manufacture method for light sensing apparatus, is characterized in that, comprising:
Form one first conductor layer on a substrate;
Form a gate insulator on this first conductor layer;
Form a channel layer on this gate insulator;
Form one second conductor layer on this channel layer, this second conductor layer has a first end and one second end, and this first conductor layer, this gate insulator, this channel layer and this second conductor layer form an active member;
Form one first transparent electrode layer on this second conductor layer;
Form a photoelectric conversion layer on this first transparent electrode layer; And
Form one second transparent electrode layer on this photoelectric conversion layer, wherein this first transparent electrode layer, this photoelectric conversion layer and this second transparent electrode layer form a sensing element, and one of them of this first end and this second end is below this sensing element.
The manufacture method of 11. light sensing apparatus according to claim 10, it is characterized in that, this second conductor layer and this first transparent electrode layer carry out Patternized technique with same photomask and formed, this second conductor layer and this first transparent electrode layer form one first opening jointly, expose this channel layer of part.
The manufacture method of 12. light sensing apparatus according to claim 11, is characterized in that, after this second transparent electrode layer of formation, more comprises:
Form a protective layer, wherein this protective layer has one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
The manufacture method of 13. light sensing apparatus according to claim 11, is characterized in that,
Before this second transparent electrode layer of formation, more comprise the leading protective layer of formation one; And
After this second transparent electrode layer of formation; more comprise formation one protective layer; wherein; this protective layer and this leading protective layer have one second opening jointly; and this protective layer has one the 3rd opening; this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
The manufacture method of 14. light sensing apparatus according to claim 11, is characterized in that,
Before this second conductor layer of formation, more be included on this channel layer and form an etch stop layer, wherein this etch stop layer have expose part this channel layer one first contact hole contact hole with one second, and part this first end and this second end respectively by this first contact hole and this second contact hole contact with this channel layer; And
After this second transparent electrode layer of formation, more comprise formation one protective layer, wherein this protective layer has one second opening and one the 3rd opening, this first transparent electrode layer of this second opening emerges part, this second transparent electrode layer of the 3rd opening emerges part.
15., according to claim 12 to the manufacture method of the light sensing apparatus described in any one in 14, is characterized in that, after this protective layer of formation, more comprise:
On this protective layer, form one the 3rd transparent electrode layer, wherein, the 3rd transparent electrode layer is contacted with this second transparent electrode layer by glue the 3rd opening; And
On this protective layer, form one the 3rd conductor layer, wherein, the 3rd conductor layer is contacted with this first transparent electrode layer by this second opening of glue, and the 3rd conductor layer overlaps at least partly with this active member on upright projection direction.
The manufacture method of 16. light sensing apparatus according to claim 10, be is characterized in that, forms this photoelectric conversion layer on this first transparent electrode layer and form the method for this second transparent electrode layer on this photoelectric conversion layer and comprise:
A N type semiconductor material layer, an intrinsic semiconductor material layer, a P type semiconductor material layer and a transparent conductor material layer is sequentially formed on this substrate;
This transparent conductor material layer of patterning, to form this second transparent electrode layer; And
This N type semiconductor material layer of patterning, this intrinsic semiconductor material layer and this P type semiconductor material layer, to form a n type semiconductor layer of mutual storehouse, extrinsic semiconductor's layer and a p type semiconductor layer.
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| TW104137868A TWI596793B (en) | 2015-11-17 | 2015-11-17 | Optical sensing apparatus and method for fabricating the same |
| TW104137868 | 2015-11-17 |
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| CN109742126A (en) * | 2019-01-11 | 2019-05-10 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display panel, display device |
| WO2021139679A1 (en) * | 2020-01-07 | 2021-07-15 | 京东方科技集团股份有限公司 | Light detection module, preparation method therefor, and light detection substrate |
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Also Published As
| Publication number | Publication date |
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| TW201719918A (en) | 2017-06-01 |
| TWI596793B (en) | 2017-08-21 |
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