CN105549674A - High-power solid state high-voltage pulse power source - Google Patents
High-power solid state high-voltage pulse power source Download PDFInfo
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- CN105549674A CN105549674A CN201610007152.3A CN201610007152A CN105549674A CN 105549674 A CN105549674 A CN 105549674A CN 201610007152 A CN201610007152 A CN 201610007152A CN 105549674 A CN105549674 A CN 105549674A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
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Abstract
The invention relates to a high-power solid state high-voltage pulse power source. A brand-new design architecture is adopted, the power source is formed by connecting multiple pulse power source modules in series through corresponding pulse transformers, pulse currents can be distributed well, for the pulse transformers, the low-transformation-ratio pulse transformers are used, distribution parameters can be reduced greatly, the influence on the leading edges, the pulse widths and the lagging edges of pulses is small, and pulse power can be ensured well. Compared with the same domestic industry, the high-power solid state high-voltage pulse power source has the advantages of being high in pulse powder and good in wave shape, and currents at the primary side of each transformer are distributed reasonably; moreover, the dsPIC control scheme is adopted, the pulse modules can be controlled effectively and synchronously, and response speed of the system is increased greatly.
Description
Technical field
The present invention relates to
oneplant high power solid state high-voltage pulse power source, be specifically applicable to the high power solid state high-voltage pulse power source on electric precipitator, be specifically designed to and collect electric precipitator four electric field dust.
Background technology
While modern industry high speed development, inevitably bring problem of environmental pollution.Discharge a large amount of dust in the production run of industrial products, dust spreads meeting severe contamination air with the wind, harm health of human body.Therefore, before industrial smoke is discharged in air, dust removal process must be carried out to it.
Electric precipitator is as main force's equipment of China's industrial dedusting, and its high-voltage suppling power and control technology have a great development so far from early eighties.High frequency electric source has significant dust removing effects under the industrial and mineral environment that dust specific resistance is lower, but under the environment that dust specific resistance is higher, the such as fine dusts of four electric fields, is easy to cause back corona phenomenon.
The pulse power controls corona current by adjustment pulse width and amplitude, make to be deposited on electric potential gradient on dust collector pole lower than dust layer voltage breakdown, thus effectively suppress inverse corona, simultaneously narrow spaces high pressure can make high quicker than dust charged and be unlikely to cause electric field flashover.
Its pulse power of the existing pulse power is lower, the corona current that very difficult output is higher, is not suitable for precipitator power supplies.Monopulse rising amplitude is higher, and the design of pulse transformer is a very large challenge, and high its distribution parameter of no-load voltage ratio pulse transformer is comparatively large, the forward position of paired pulses, pulsewidth and rear serious along impact; The high momentary current of high-voltage pulse is easy to the damage causing device in addition.
Summary of the invention
For above-mentioned technical matters, technical matters to be solved by this invention is to provide a kind of high power solid state high-voltage pulse power source, adopts brand-new design framework, the forward position of paired pulses, pulsewidth, and rear less along impact, and can be good at ensure that pulse power.
The present invention is in order to solve the problems of the technologies described above by the following technical solutions: the present invention devises a kind of high power solid state high-voltage pulse power source, comprises the pulse transformer of control module, at least two pulse power source modules and at least two default low no-load voltage ratios; Wherein, control module is connected with each pulse power source module respectively, and the quantity of pulse power source module is equal with the quantity of pulse transformer, and mutually corresponding one by one each other, each pulse power source module is connected with respective pulses transformer respectively, and each pulse transformer is connected successively.
As a preferred technical solution of the present invention: each pulse power source module described comprises SCR rectification circuit, insulated gate bipolar transistor on-off circuit and high power capacity tank circuit respectively, wherein, SCR rectification circuit comprises silicon controlled rectifier module, reactor L1, electric capacity C1, described control module is connected with the signals collecting end of silicon controlled rectifier module in each pulse power source module respectively, one of them output terminal of silicon controlled rectifier module is connected with wherein one end of reactor L1, the other end of reactor L1 is as an output terminal of SCR rectification circuit, and be connected with wherein one end of electric capacity C1, another output head grounding of silicon controlled rectifier module, and be connected with the other end of electric capacity C1, and this end of electric capacity C1 is as another output terminal of SCR rectification circuit, insulated gate bipolar transistor on-off circuit comprises insulated gate bipolar transistor, diode D1 and diode D2, described control module is connected with the base stage of insulated gate bipolar transistor in each pulse power source module respectively, corresponding to the reactor L1 other end, the output terminal of SCR rectification circuit is connected with the positive pole of diode D1, the negative pole of diode D1 is as one of them output terminal of insulated gate bipolar transistor on-off circuit, and with the collector of insulated gate bipolar transistor, the negative pole of diode D2 is connected, the output terminal of SCR rectification circuit corresponding to the electric capacity C1 other end, as another output terminal of insulated gate bipolar transistor on-off circuit, and with the emitter of insulated gate bipolar transistor, the positive pole of diode D2 is connected, high power capacity tank circuit comprises electric capacity C2, corresponding to diode D1 negative pole, the output terminal of insulated gate bipolar transistor on-off circuit is connected with one end of electric capacity C2, the other end of electric capacity C2 is as one of them output terminal of high power capacity tank circuit, the output terminal of insulated gate bipolar transistor on-off circuit corresponding to the electric capacity C1 other end, as another output terminal of high power capacity tank circuit, two output terminals of high power capacity tank circuit are connected with two input ends of described pulse transformer, the output terminal of each pulse transformer is connected each other successively.
As a preferred technical solution of the present invention: described control module is single-chip microcomputer.
As a preferred technical solution of the present invention: described control module is dsPIC singlechip.
As a preferred technical solution of the present invention: the quantity of described pulse power source module is 10, the low no-load voltage ratio of described pulse transformer is 1:12.
A kind of high power solid state high-voltage pulse power source of the present invention adopts above technical scheme compared with prior art, there is following technique effect: the high power solid state high-voltage pulse power source of the present invention's design, adopt brand-new design framework, formed through respective pulses transformer series by multiple pulse power source module, pulse current can well be distributed, and for pulse transformer, use the pulse transformer of low no-load voltage ratio, greatly can reduce distribution parameter, the forward position of paired pulses, pulsewidth, and it is rear less along impact, and can be good at ensure that pulse power, and the high power solid state high-voltage pulse power source of the present invention's design, compare domestic pharmaceutical industry industry, have that pulse power is large, waveform good, transformer primary side current distributes rational advantage, moreover, wherein adopt the control program of dsPIC, the effective synchro control pulse module of energy, accelerates system response time greatly.
Accompanying drawing explanation
Fig. 1 is the structural representation of the designing high-power solid high-voltage pulse power of the present invention;
Fig. 2 is pulse power source module schematic diagram in the designing high-power solid high-voltage pulse power of the present invention.
Wherein, 1. SCR rectification circuit, 2. insulated gate bipolar transistor (IGBT) on-off circuit, 3. high power capacity tank circuit.
Embodiment
Be described in further detail for the specific embodiment of the present invention below in conjunction with Figure of description.
As shown in Figure 1, the present invention designs a kind of high power solid state high-voltage pulse power source in the middle of actual application, comprises the pulse transformer of dsPIC singlechip, at least two pulse power source modules and at least two default low no-load voltage ratios, wherein, dsPIC singlechip is connected with each pulse power source module respectively, and the quantity of pulse power source module is equal with the quantity of pulse transformer, and mutually corresponding one by one each other, each pulse power source module is connected with respective pulses transformer respectively, and each pulse transformer is connected successively, as shown in Figure 2, wherein, each pulse power source module comprises SCR rectification circuit 1, insulated gate bipolar transistor (IGBT) on-off circuit 2 and high power capacity tank circuit 3 respectively, wherein, SCR rectification circuit 1 comprises silicon controlled rectifier module, reactor L1, electric capacity C1, described dsPIC singlechip is connected with the signals collecting end of silicon controlled rectifier module in each pulse power source module respectively, one of them output terminal of silicon controlled rectifier module is connected with wherein one end of reactor L1, the other end of reactor L1 is as an output terminal of SCR rectification circuit 1, and be connected with wherein one end of electric capacity C1, another output head grounding of silicon controlled rectifier module, and be connected with the other end of electric capacity C1, and this end of electric capacity C1 is as another output terminal of SCR rectification circuit 1, insulated gate bipolar transistor (IGBT) on-off circuit 2 comprises insulated gate bipolar transistor (IGBT), diode D1 and diode D2, described dsPIC singlechip is connected with the base stage of insulated gate bipolar transistor (IGBT) in each pulse power source module respectively, corresponding to the reactor L1 other end, the output terminal of SCR rectification circuit 1 is connected with the positive pole of diode D1, the negative pole of diode D1 is as one of them output terminal of insulated gate bipolar transistor (IGBT) on-off circuit 2, and with the collector of insulated gate bipolar transistor (IGBT), the negative pole of diode D2 is connected, the output terminal of SCR rectification circuit 1 corresponding to the electric capacity C1 other end, as another output terminal of insulated gate bipolar transistor (IGBT) on-off circuit 2, and with the emitter of insulated gate bipolar transistor (IGBT), the positive pole of diode D2 is connected, high power capacity tank circuit 3 comprises electric capacity C2, corresponding to diode D1 negative pole, the output terminal of insulated gate bipolar transistor (IGBT) on-off circuit 2 is connected with one end of electric capacity C2, the other end of electric capacity C2 is as one of them output terminal of high power capacity tank circuit 3, the output terminal of insulated gate bipolar transistor (IGBT) on-off circuit 2 corresponding to the electric capacity C1 other end, as another output terminal of high power capacity tank circuit 3, two output terminals of high power capacity tank circuit 3 are connected with two input ends of described pulse transformer, the output terminal of each pulse transformer is connected each other successively.
Based on high power solid state high-voltage pulse power source designed by the invention described above, in the middle of actual application, specific design adopts 10 pulse power source modules, namely the quantity of pulse transformer is similarly 10, each pulse power source module is mutually corresponding one by one with each pulse transformer respectively, each pulse power source module is connected with respective pulses transformer respectively, each pulse transformer is connected successively, namely high power solid state high-voltage pulse power source designed by the present invention is formed, wherein, dsPIC singlechip by its respectively with the connection of the signals collecting end of silicon controlled rectifier module in each pulse power source module, obtain signal sampling, the signal sampling that obtains comprises busbar voltage, bus current, pulse current, temperature of silicon controlled rectifier, insulated gate bipolar transistor temperature, and the high-tension current/voltage of pulse transformer, then based on obtained signal sampling, control for insulated gate bipolar transistor (IGBT) in respective pulses power module, namely control for insulated gate bipolar transistor (IGBT) on-off circuit 2, conveniently realize the fast tunable of pulse width, amplitude.Thus, high power solid state high-voltage pulse power source designed by the present invention, adopt brand-new design framework, formed through respective pulses transformer series by multiple pulse power source module, pulse current can well be distributed, and for pulse transformer, use the pulse transformer of low no-load voltage ratio, greatly can reduce distribution parameter, the forward position of paired pulses, pulsewidth, and rear less along impact, and can be good at ensure that pulse power; And the high power solid state high-voltage pulse power source of the present invention's design, compare domestic pharmaceutical industry industry, have that pulse power is large, waveform good, transformer primary side current distributes rational advantage; Moreover, wherein adopt the control program of dsPIC, the effective synchro control pulse module of energy, accelerates system response time greatly.
Be explained in detail for embodiments of the present invention in conjunction with Figure of description above, but the present invention is not limited to above-mentioned embodiment, in the ken that those of ordinary skill in the art possess, can also make a variety of changes under the prerequisite not departing from present inventive concept.
Claims (5)
1. a high power solid state high-voltage pulse power source, is characterized in that: the pulse transformer comprising control module, at least two pulse power source modules and at least two default low no-load voltage ratios; Wherein, control module is connected with each pulse power source module respectively, and the quantity of pulse power source module is equal with the quantity of pulse transformer, and mutually corresponding one by one each other, each pulse power source module is connected with respective pulses transformer respectively, and each pulse transformer is connected successively.
2. a kind of high power solid state high-voltage pulse power source according to claim 1, is characterized in that: each pulse power source module described comprises SCR rectification circuit, insulated gate bipolar transistor on-off circuit and high power capacity tank circuit respectively, wherein, SCR rectification circuit comprises silicon controlled rectifier module, reactor L1, electric capacity C1, described control module is connected with the signals collecting end of silicon controlled rectifier module in each pulse power source module respectively, one of them output terminal of silicon controlled rectifier module is connected with wherein one end of reactor L1, the other end of reactor L1 is as an output terminal of SCR rectification circuit, and be connected with wherein one end of electric capacity C1, another output head grounding of silicon controlled rectifier module, and be connected with the other end of electric capacity C1, and this end of electric capacity C1 is as another output terminal of SCR rectification circuit, insulated gate bipolar transistor on-off circuit comprises insulated gate bipolar transistor, diode D1 and diode D2, described control module is connected with the base stage of insulated gate bipolar transistor in each pulse power source module respectively, corresponding to the reactor L1 other end, the output terminal of SCR rectification circuit is connected with the positive pole of diode D1, the negative pole of diode D1 is as one of them output terminal of insulated gate bipolar transistor on-off circuit, and with the collector of insulated gate bipolar transistor, the negative pole of diode D2 is connected, the output terminal of SCR rectification circuit corresponding to the electric capacity C1 other end, as another output terminal of insulated gate bipolar transistor on-off circuit, and with the emitter of insulated gate bipolar transistor, the positive pole of diode D2 is connected, high power capacity tank circuit comprises electric capacity C2, corresponding to diode D1 negative pole, the output terminal of insulated gate bipolar transistor on-off circuit is connected with one end of electric capacity C2, the other end of electric capacity C2 is as one of them output terminal of high power capacity tank circuit, the output terminal of insulated gate bipolar transistor on-off circuit corresponding to the electric capacity C1 other end, as another output terminal of high power capacity tank circuit, two output terminals of high power capacity tank circuit are connected with two input ends of described pulse transformer, the output terminal of each pulse transformer is connected each other successively.
3. a kind of high power solid state high-voltage pulse power source according to claim 1 or 2, is characterized in that: described control module is single-chip microcomputer.
4. a kind of high power solid state high-voltage pulse power source according to claim 3, is characterized in that: described control module is dsPIC singlechip.
5. according to a kind of high power solid state high-voltage pulse power source described in any one in claim 1,2 or 4, it is characterized in that: the quantity of described pulse power source module is 10, the low no-load voltage ratio of described pulse transformer is 1:12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610007152.3A CN105549674A (en) | 2016-01-07 | 2016-01-07 | High-power solid state high-voltage pulse power source |
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| CN201610007152.3A CN105549674A (en) | 2016-01-07 | 2016-01-07 | High-power solid state high-voltage pulse power source |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0397205A1 (en) * | 1989-05-11 | 1990-11-14 | Matsushita Electric Industrial Co., Ltd. | Vacuum cleaner |
| CN2547066Y (en) * | 2002-04-01 | 2003-04-23 | 广东杰特科技发展有限公司 | Large power high frequency pulse electric source |
| CN2556848Y (en) * | 2002-03-01 | 2003-06-18 | 大连贵友机电有限公司 | High-frequency inverter for electric removing dust |
| CN203166799U (en) * | 2013-03-12 | 2013-08-28 | 江苏一同环保工程技术有限公司 | Large-power serial connection overlapped type pulse power supply |
| CN203862395U (en) * | 2014-05-07 | 2014-10-08 | 浙江佳环电子有限公司 | DC superimposed impulse high-voltage power supply for electric precipitator |
-
2016
- 2016-01-07 CN CN201610007152.3A patent/CN105549674A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0397205A1 (en) * | 1989-05-11 | 1990-11-14 | Matsushita Electric Industrial Co., Ltd. | Vacuum cleaner |
| CN2556848Y (en) * | 2002-03-01 | 2003-06-18 | 大连贵友机电有限公司 | High-frequency inverter for electric removing dust |
| CN2547066Y (en) * | 2002-04-01 | 2003-04-23 | 广东杰特科技发展有限公司 | Large power high frequency pulse electric source |
| CN203166799U (en) * | 2013-03-12 | 2013-08-28 | 江苏一同环保工程技术有限公司 | Large-power serial connection overlapped type pulse power supply |
| CN203862395U (en) * | 2014-05-07 | 2014-10-08 | 浙江佳环电子有限公司 | DC superimposed impulse high-voltage power supply for electric precipitator |
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Application publication date: 20160504 |