CN105529409B - One kind printing AM-QDLED devices and preparation method thereof - Google Patents
One kind printing AM-QDLED devices and preparation method thereof Download PDFInfo
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- CN105529409B CN105529409B CN201510764160.8A CN201510764160A CN105529409B CN 105529409 B CN105529409 B CN 105529409B CN 201510764160 A CN201510764160 A CN 201510764160A CN 105529409 B CN105529409 B CN 105529409B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
Of the invention to disclose a kind of printing AM QDLED devices and preparation method thereof, the present invention forms a rough layer by increasing its roughness in Bank top layers, on the premise of outer material and technology difficulty is not increased, amplifies infiltration lyophobicity of the ink initial stage to substrate；And structure is formed by varying ink, make ink to substrate relative hydrophobic early period in volatilization process, and ink is confined in Bank structures by the amplification effect of substrate roughness；Thereafter with high surface tension and low-boiling solution evaporation, solution surface tension tapers into Bank, finally forms wet face state with Bank, improves the uniformity of solution film forming, and enhances device performance and manufacture cost.At the same time relative to traditional handicraft, operation is simple and controllability is high for the method for the present invention, and manufacture difficulty can be reduced under the premise of manufacture craft is not increased, and finally reduces holistic cost and improve device profit margin.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of printing AM-QDLED devices and its preparation side
Method.
Background technology
Due to possessing the feature not available for FMM the or SMS mask plate modes of production such as large area, flexibility and low cost
Point, prints Organic Light Emitting Diode（OLED）Increasingly it is subject to manufacturer with quantum dot-Organic Light Emitting Diode QD-LED technologies
Concern.But as an emerging technology, solwution method printing technology and typography fail to be well solved always.Although grind
The persons of studying carefully improve it from material and spray printing device, but the film morphology printed out is uneven to wait printing problem always
Fail to reach expected results.
In routinely AM-QDLED or AMOLED devices are printed, pixel defining layer (PDL or Bank) is up-narrow and down-wide to present
Structure with limit ink printing when overflow around.The pixel defining layer is generally negative photoresist, its surface is smooth.For
Ensure the uniformity of ink film forming, need inside Bank to be presented lyophily property with ink, and at the same time to avoid drop flight and adjacent
Ink merges between pixel, and Bank top halfs need that lyophoby property is presented with liquid.Conventional printing ink is single solvent body
System, then in press to realize Bank tops lyophoby and lower part lyophily effect, Bank is often by multiple material and by repeatedly multiple
General labourer's sequence is made.By this mode to ensure ink to the close and distant fluidities of Bank, there is repeatedly contraposition, exposure, development and etching work
The shortcomings of sequence, the rising of generation manufacture difficulty, complex manufacturing technology, poor device entirety lack of homogeneity and surface filming, greatly
Printing technology is limited in the upward utilization of large-sized monitor manufacturer.
Therefore, the prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide one kind printing AM-QDLED devices and its system
Preparation Method, it is intended to solve the existing rising of pixel defining layer manufacture difficulty, complex manufacturing technology, device entirety lack of homogeneity and surface
The problem of film forming is poor.
Technical scheme is as follows：
A kind of preparation method of printing AM-QDLED devices, wherein, including step：
A, TFT drive arrays are deposited on substrate, then the Deposition anode layer in TFT drive arrays；
B, photoresist is coated on the anode layer, and photoresist is fabricated to pixel circle of trapezium structure using the method exposed
Given layer, then makes a rough layer on the top of the pixel defining layer of trapezium structure；
C, electron injecting layer, electron transfer layer and quantum dot light emitting layer are made successively in the groove of pixel defining layer；
D, hole transmission layer, hole injection layer and cathode layer are made successively on quantum dot light emitting layer, obtains printing AM-
QDLED devices.
The preparation method of the printing AM-QDLED devices, wherein, in the step A, the substrate is rigid substrates
Or flexible base board.
The preparation method of the printing AM-QDLED devices, wherein, the step A specifically includes step：To substrate into
The clean processing of row, then deposits TFT drive arrays and is made annealing treatment on substrate, then deposited in TFT drive arrays
Anode layer simultaneously performs etching to form anode pattern.
The preparation method of the printing AM-QDLED devices, wherein, in the step B, the material bag of the photoresist
Resinous, emulsion, solvent and additive.
The preparation method of the printing AM-QDLED devices, wherein, the step B specifically includes step：In anode layer
On coated and photoresist and dry with spin coating proceeding, then in photoresist surface rolling groove and etching processing is carried out, after having suppressed
Substrate is dried again, is crosslinked photoresist by Exposure mode after drying, forms up-narrow and down-wide and coarse upper surface picture
Element defines layer.
The preparation method of the printing AM-QDLED devices, wherein, the step B specifically includes step：In anode layer
On coated and photoresist and dry with spin coating proceeding, be then crosslinked photoresist by Exposure mode, then to crosslinking after
Photoresist be molded and etching processing, forms up-narrow and down-wide and coarse upper surface pixel defining layer.
The preparation method of the printing AM-QDLED devices, wherein, the step B specifically includes step：In anode layer
On with spin coating proceeding, coating and is dried at photoresist for the first time, second is carried out after this layer of photoresist dry and is shaped and coats photoetching
Glue, followed by drying and sizing, is exposed after two layers of photoresist is shaped with the contraposition of patterned mask plate, narrow in formation
Lower wide and coarse upper surface pixel defining layer.
The preparation method of the printing AM-QDLED devices, wherein, in the step C, the quantum dot light emitting layer
The solvent of quantum dot is ink, and the ink is made of the solvent of two kinds of different boilings and different surfaces tension force.
The preparation method of the printing AM-QDLED devices, wherein, further include step after the step D：
E, connate water oxygen barrier layer and protective layer after deposited cathode layer, finally paste dehumidizer encapsulation, are finally completed print again
Brush the preparation of AM-QDLED devices.
One kind printing AM-QDLED devices, wherein, the preparation side of use as above any printing AM-QDLED devices
Method is prepared.
Beneficial effect：The present invention is made between rough layer and ink by making a rough layer on the top of pixel defining layer
Wenzel effects are formed, amplifies the contact angle between ink initial stage and pixel defining layer surface, is not increasing outer material and technique
It ensure that there is ink in pixel defining layer upper surface higher lyophobicity on the premise of difficulty.
Brief description of the drawings
Fig. 1 is a kind of flow chart of the preparation method preferred embodiment of printing AM-QDLED devices of the present invention.
Fig. 2 is the schematic diagram of nano impression flute profile looks of the present invention.
Fig. 3 is that the present invention first imprints the process flow chart that post-exposure makes rough layer.
Fig. 4 is that the present invention first exposes the process flow chart for imprinting make rough layer afterwards.
Fig. 5 is the process flow chart that present invention coating twice makes rough layer.
Fig. 6 is initial stage after ink printing of the present inventionShi Moshui is distributed the schematic diagram with particles of solute flow direction.
Fig. 7 is progressively dries after ink printing of the present invention, solute when gradual wellability steps up between ink and Bank
The schematic diagram of grain flow direction.
Fig. 8 is the ink printing later stage of the present inventionShi Moshui is distributed the schematic diagram with QD flow directions.
Fig. 9 is the structure diagram of device topography after quantum dot light emitting layer of the present invention is dried.
Figure 10 is the structure diagram of the encapsulation printing AM-QDLED devices of the present invention.
Embodiment
The present invention provides a kind of printing AM-QDLED devices and preparation method thereof, to make the purpose of the present invention, technical solution
And effect is clearer, clear and definite, the present invention is described in more detail below.It should be appreciated that specific implementation described herein
Example is not intended to limit the present invention only to explain the present invention.
Referring to Fig. 1, Fig. 1 is a kind of flow of the preparation method preferred embodiment of printing AM-QDLED devices of the present invention
Figure, as shown in the figure, it includes step：
S100, deposit TFT drive arrays on substrate, then the Deposition anode layer in TFT drive arrays；
S200, coat photoresist on the anode layer, and photoresist is fabricated to the picture of trapezium structure using the method exposed
Element defines layer, then makes a rough layer on the top of trapezoidal pixel defining layer；
S300, make electron injecting layer, electron transfer layer and quantum dot light emitting layer successively in the groove of pixel defining layer；
S400, make hole transmission layer, hole injection layer and cathode layer successively on quantum dot light emitting layer, obtains AM-
QDLED devices.
The present invention increases roughness on the premise of Bank material systems are not changed on Bank material surfaces, forms one layer
Rough layer.Due to the increase of surface roughness, according to Wenzel effects, then wetting capacity effect is also put between substrate and ink
Greatly, the ink for making to omit substrate lyophoby is changed into super lyophoby state, ensure that ink is only capable of sinking inside Bank raceway grooves in printing
Product.Since Other substrate materials system is constant, which will not form separation between layers, while its in the production process
Production method is simple and practicable, and manufacture difficulty and cost of manufacture can be greatly lowered.
In the step S100, the substrate includes rigid substrates and flexible base board.The optional silicon chip of the rigid substrates, gold
The rigid substrates such as category, glass or stainless steel.The optional polyimides of flexible base board（PI）, polyethylene terephthalate
（PET）Or polyethylene naphthalate（PEN）Deng flexible base board.When the substrate selects flexible base board, the flexibility base
Plate needs to attach in advance on the rigid substrate or film forming.Preferably, substrate of the present invention selects glass substrate.
The step S100 specifically includes step：Clean processing is carried out to substrate, TFT driving battle arrays are then deposited on substrate
Arrange and made annealing treatment, then Deposition anode layer and perform etching to form anode pattern in TFT drive arrays.For example, work as
When the substrate selects glass substrate, clean processing is carried out with the cleaning of electron level to glass substrate in advance, then in glass
TFT drive arrays are deposited on glass substrate and carry out 300 ~ 350 DEG C of annealings, to ensure the performance of TFT drive arrays.Then exist
Deposition anode layer (e.g., ito anode layer) and perform etching to form anode pattern in TFT drive arrays.
In the step S200, the material of the photoresist can be negative photoresist material, the material of the photoresist
Include resin, emulsion, solvent and additive etc..Wherein, the resin gives manufactured pixel defining layer machine as adhesive
Tool and chemical property（Such as adhesiveness, film thickness, heat endurance）；Under luminous energy effect photochemistry can occur for the emulsion
Reaction；The solvent can keep the liquid condition of photoresist, photoresist is had good mobility；The additive can be used for
Change some activity of photoresist, such as add coloring agent to improve photoresist that reflection occurs.Preferably, the resin is
Polyisoprene, the polyisoprene are a kind of natural rubber.The solvent is dimethylbenzene.The emulsion passes through to be a kind of
The photosensitizer of nitrogen is discharged after overexposure, the free radical of generation forms crosslinking between rubber molecule, so as to become insoluble in aobvious
Shadow liquid.
On the anode layer with spin coating proceeding coat photoresist and dry after, it is necessary to formation pixel defining layer top make
Rough layer, the surface tension of the rough layer is not more than negative photoresist surface tension, should on the premise of material system is not changed
Rough layer can be negative photo glue material of the same race, and pass through the other techniques making of coining or by several times coating development etc..
After coating photoresist on the anode layer, substrate is dried.At the same time with nanometer embossing in photoresist surface rolling
Nano grooves and to improve surface roughness r, r be actual surface area and surface presentation area ratio.It is sufficiently large to produce
Wenzel amplification effects, r should be 1.5< r < 6（Nano impression flute profile looks are as shown in Figure 2）.If liquid is to the quiet of flat substrate
State contact angle is θ, and is θ * in rough substrate contact angle, and surface roughness is actual surface area divided by surface macroscopic view face than r
Product, then Wenzel models can be expressed as：
When for make the ink of quantum dot light emitting layer with photoresist contact angle in 90 ~ 100 ° of sections when, according to groove
Type coining plate, to ensure that the amplification effect of surface roughness r is in Wenzel influential effects region, gash depth h is wide with interval
Spending w ratios should be 2:1 or so (as shown in Figure 2).If printing AM-QDLED devices need the pixel defining layer upper table surface roughness to be
Ra <25 nm, coining groove depth h<50 nm, and width<25 nm, surface roughness r is 5 at this time.Passing through coining side
When formula makes the rough layer, the present invention can be carried out after first imprinting substrate according to the roughness and exposure area of imprinted pattern
Expose or first expose and imprint two ways progress afterwards.It is specific as follows：
(1) if, imprinted pattern Ra surface roughnesses it is smaller（Ra < 15 nm）And exposure area is larger（Um grades）, it is exposed
When surface roughness exposure machine incident light is influenced smaller, then imprint process can be placed in before exposure technology and carry out.It is then described
Step S200 specifically includes step：Photoresist is coated with spin coating proceeding on the anode layer and is dried, is then pressed on photoresist surface
Groove processed simultaneously carries out etching processing, and substrate is dried again after having suppressed, is crosslinked photoresist by Exposure mode after drying,
Form up-narrow and down-wide and coarse upper surface pixel defining layer.Optionally the substrate after coining is carried out after imprinting
After dry with fixation surface pattern.Then it is crosslinked by Exposure mode photoresist, is allowed to not dissolve in developer solution.And imprinted pattern
Up-narrow and down-wide and coarse upper surface pattern is formed through over etching, as shown in Figure 3.
If imprinted pattern is more coarse（Ra > 15 nm）And exposure area, when being nanoscale, imprint process can expose
Photoresist is molded afterwards.Then the step S200 specifically includes step：Photoresist is coated with spin coating proceeding on the anode layer
And dry, photoresist then is crosslinked by Exposure mode, then the photoresist after crosslinking is molded and etches place
Reason, forms up-narrow and down-wide and coarse upper surface pixel defining layer.Imprinted after photoresist exposure, passed through again after coining
Etching technics forms up-narrow and down-wide and coarse upper surface pattern.Photoresist thickness is needed depending on practical devices, about 1 ~
3um, as shown in Figure 4.
Rough layer also can be used deposits making with Other substrate materials at twice.Negative photoresist at least point 2 paintings during making
Apply, coating negative photoresist material system is identical twice, but density and concentration are different, wherein being applied when applying for second for first time
Deposited weak solution with photoresist, concentration not higher than for the first time with photoresist weak solution 50%.When being coated by gradation, institute
State step S200 and specifically include step：Coat photoresist for the first time with spin coating proceeding on the anode layer and dry, treat this layer of photoetching
Glue carries out second coating photoresist after drying and shaping, followed by drying and sizing, after two layers of photoresist is shaped with
The contraposition of patterned mask plate is exposed, and forms up-narrow and down-wide and coarse upper surface pixel defining layer.For example, in TFT backplate
Upper to carry out first time coating, this layer of negative photoresist is dried and shapes through overbaking thereafter, this layer of photoresist thickness depends on
Needed in practical devices, about 1 ~ 3um.Secondary coating is carried out after first time photoresist dryness finalization, second of coating photoetching
Glue weak solution, coating thickness are less than 1um.Thereafter it is dried and shapes through overbaking again.To scheme after two layers photoresist is shaped
The contraposition of case mask plate, which is exposed to make to be exposed forefoot area, carries out crosslinking sizing, as shown in Figure 5.The picture made in this way
Element defines layer, and there are following feature：, can phase in illumination since pixel defining layer first layer and the second layer are same material
Mutually crosslinking, so will not occur to be layered obscission.In pattern most last layer, since photoetching gum concentration is relatively low and intermolecular distance
Relatively far away from, cause it is adjacent in drying and crosslinking between molecular line become larger with pullling power so that shaping rear surface out-of-flatness, from
And increase the roughness r on surface（1.5 < r < 6）.According to Wencel effects, contact angle amplification effect follows at this time：
The rough layer made by both the above mode, if when the ink in quantum dot light emitting layer is non-volatile and photoresist
Desired static contact angle is 95 °, and r is 6, then the actual contact angle can be amplified to 120 ° on a rough surface, ensure that printing
Ink can be only distributed in ditch.After the preparation of rough layer is completed, device removes by developer solution be not exposed region again, is formed
Up-narrow and down-wide pattern.
In step S300 of the present invention, after Bank makes, inkjet printing is used in its groove（Inkjet）
Or evaporation mode makes the electron injecting layer and electron transfer layer of printing AM-QDLED devices.Quantum dot light emitting layer EML is printing
Technique makes.Wherein, quantum dot can be the materials such as normal CdS e/CdS, and the solvent of quantum dot is ink.Preferably, it is of the invention
The ink is made of the solvent of two kinds of different boilings and different surfaces tension force.Ink of the present invention is not limited to two kinds of solvent groups
Into can also be made of two or more solvents.Formed for example, setting ink x of the present invention as solvent orange 2 A and solvent B, solvent orange 2 A
It can dissolve each other with B, and respective boiling point is kept after dissolving each other.Using γ as surface tension,WithRepresent two kinds of solvents boiling point andWithRepresent both saturated vapor pressures at normal temperatures and pressures：
Preferably in order to reduce technology difficulty, above parameter also can tune to：
The infiltration of liquid and solid depends on the matching between surface both tension force.For the surface tension of Bank, generally
Bank colloids are polar material, so withWithRepresent the component of polar forces and dispersion force in Bank substrate surface tension force.When
When AB solvents are polar solvent, have：
If AB solvents are nonpolar solvent：
Wherein, A can be 19 according to needs are made than scope with B solvent volumes:1~8:Between 2.And quantum dot is in entirety
Solid content is between 3% ~ 7% in solvent x.
After ink is configured, the present invention is dried and toasts to ink, and drying can take heating or extract negative pressure
Mode carries out, and one is divided into three：
A, environment temperature is raised under normal pressure to T1, andTo avoid ink boils and holding 5 ~ 10
min.Because, in this stage ink and Bank into incomplete wet face state（Relative hydrophobic）, ink formed in Bank
Outwardly convex.Growing for general pixel size is wide in 100 um or so in 100 ~ 200um or so, shows much larger than ink capillary
As characteristic length：
Wherein, ρ is fluid density in above formula, and g is acceleration of gravity.So ink bulge middle bent radius Rc is more than side
Edge radius of curvature R e, edge rate of volatilization is more than middle part, under the influence of ink flow, quantum according to Kelvin equation
Point particle moves from inside to outside.But because ink and Bank into incomplete wet face state（Relative hydrophobic）, decline in ink level
During, liquid can not be on Bank inclined-planes into fluid film, then quantum dot particle can not also deposit on Bank inclined-planes.
The long-range B of the rate of volatilization of solvent orange 2 A during this, then the process is solvent orange 2 A reduction process, as shown in Figure 6.
With the volatilization of solvent orange 2 A,It is gradually reduced, then in volatilization process ink inside and Bank gradually by not exclusively infiltrating shape
State（It is hydrophobic）To infiltration（It is hydrophilic）It is changed.During transformation, ink curved edge radius becomes larger, and causes ink
Rate of volatilization difference tapers at edge rate of volatilization and center, while quantum dot particle is displaced outwardly from center in ink
Speed diminishes, as shown in Figure 7.
After A solvents vapor away substantially, the content of B gradually increases and causes ink surface tension in ink, ink
Wet face state is formed between water and Bank.Ink and Bank intersection liquid level borders are under the action of gravity and surface tension at this time
It is bent downwardly.Learnt with reason Kelvin equation, boundary rate of volatilization is less than Ink Bubble Center portion rate of volatilization at this time, exists at this time
Under the ink flow of the generation of solution concentration difference, quantum dot particle again from border to center move, with ink before making up to
Cause edge solute excess accumulation phenomenon during edge flowing, as shown in Figure 8.
B, keep pressure constant, raise environment temperature to T2, and, to avoid ink boils and holding 3
~5 min.Solvent orange 2 A has volatilized totally substantially at this time, solvent B residuals in the ink and and Bank formation wet face states, border at this time
Place's rate of volatilization is less than Ink Bubble Center portion rate of volatilization, at this time under the ink flow of the generation of solution concentration difference, quantum dot
Grain is moved from border to center again, and with ink before making up to edge flowing when causes edge solute excess accumulation phenomenon.But
Since solvent B content is seldom, then residual solution thickness e is also very thin in Bank.According to Navier-Stoke hydrodynamics formula
Understand that ink rate travel is inversely proportional with sample path length, then about thin then its migration of solution is about difficult.So in the influence of the phenomenon
Under, the inside migration rate of quantum dot is relatively low in ink, is not in be caused due to excess flow after drying in quantum dot layer
The film forming uneven phenomenon that portion protrudes.
C, keep pressure constant, rise environment temperature is extremely, 1min is kept to be completely dried solvent, such as Fig. 9 institutes
Show.
Entirely drying the process can also realize by adjusting saturated vapor pressure.At room temperature three sections of vapour pressures P1, P2 and
P3 needs to meet：
If drying environment such as temperature changes when being dried with saturation vapor pressure method, corresponding solution is at such a temperature
Its corresponding saturated vapor pressure and boiling point change can use Clausius-C1apeyron equation（Clausius–Clapeyron
relation）, Peter Antonie（Antoine）Empirical equation or Lee-Kessler（Lee-Kesler equation）Scheduling theory formula
Export.
The present invention adds high surface tension and low-boiling solvent by varying printing ink composition and ratio in the ink,
The infiltration degree of ink and Bank materials is changed by solution evaporation drying.Ink and Bank are printing and dry initial stage is thin
Water repels state, makes ink during drying, and liquid level will not be due to hydrophilic so as to oblique in Bank while liquid level declines
Face, which leaves solvent film, causes solute or suspended particulate to remain, and improves stock utilization, but suspended particulate or molten in the process
Matter can be to the close Bank boundaries accumulation of ink；Thereafter by the liquid for vaporing away high surface tension, it is changed into ink and Bank
It is hydrophilic, rate of volatilization in the middle part of ink is more than ink edge, produce the reflux of ecto-entad, the solute that above will outwards flow
Again inwardly gather, with flat surfaces and improve into film uniformity.
In the step S400, after having made EML, then with inkjet printing（Inkjet）, nozzle print（Nozzle
printing）Or evaporation mode makes hole transmission layer（HTL）And hole injection layer（HIL）, and moved back by solvent drying, material
Fire and etc. form functional layer, last evaporation cathode layer, completes printing AM-QDLED devices and prepares.
The step S400 further includes step：
Connate water oxygen barrier layer and protective layer after S500, deposited cathode layer, finally paste dehumidizer encapsulation, complete printing again
The making of AM-QDLED devices.
The encapsulation of the printing AM-QDLED devices can use atomic layer deposition（ALD）Mode prepares the inorganic thin of densification
Film（Such as SiNx、SiO2Deng）As water oxygen barrier layer, and protective layer is made, prevent damage of the external force to water oxygen barrier layer.Then,
Packaging protection film with dehumidizer is pasted using laminating machine, further obstructs the infiltration of steam, oxygen, completes printing AM-
QDLED devices encapsulate.Device encapsulation can also use Firit（Glass dust laser package）Or dam（Epoxy resin）Deng packaged type
Realized, as shown in Figure 10.
Based on the preparation method of above-mentioned printing AM-QDLED devices, the present invention also provides one kind to print AM-QDLED devices,
It uses the preparation method of as above any printing AM-QDLED devices to be prepared.Pass through the printing AM- of the present invention
The preparation method of QDLED devices, on the premise of material structure, printing equipment and technology difficulty is not increased, improves ink and exists
The distribution of patterned substrate and the flatness and uniformity of functional layer printing, add the yield of finished product and the effect of device and drop
Low production cost.
In conclusion a kind of printing AM-QDLED devices provided by the invention and preparation method thereof, the present invention by
Bank top layers increase its roughness and form a rough layer, on the premise of outer material and technology difficulty is not increased, at the beginning of amplifying ink
Infiltration lyophobicity of the phase to substrate；And structure is formed by varying ink, ink is dredged substrate relatively early period in volatilization process
Water, and ink is confined in Bank structures by the amplification effect of substrate roughness；Thereafter with high surface tension and low boiling
Point solution evaporation, solution surface tension tapers into Bank, finally with Bank formed wet face state, improve solution into
The uniformity of film, and enhance device performance and manufacture cost.It is easy to operate easily relative to traditional handicraft, the method for the present invention at the same time
Row and controllability height, can reduce manufacture difficulty under the premise of manufacture craft is not increased, and finally reduce holistic cost and improve
Device profit margin.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect scope.
Claims (10)
1. a kind of preparation method of printing AM-QDLED devices, it is characterised in that including step：
A, TFT drive arrays are deposited on substrate, then the Deposition anode layer in TFT drive arrays；
B, photoresist is coated on the anode layer, and the pixel for using the method exposed that photoresist is fabricated to trapezium structure defines
Layer, then makes a rough layer on the top of the pixel defining layer of trapezium structure；
C, electron injecting layer, electron transfer layer and quantum dot light emitting layer are made successively in the groove of pixel defining layer；
D, hole transmission layer, hole injection layer and cathode layer are made successively on quantum dot light emitting layer, obtains printing AM-QDLED
Device；
The rough layer is prepared by nanometer embossing, coining groove depth h<50 nm, imprint well width< 25
Nm, surface roughness r are 1.5< r <6, r be actual surface area and surface presentation area ratio.
2. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that in the step A, institute
It is rigid substrates or flexible base board to state substrate.
3. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that the step A is specific
Including step：Clean processing is carried out to substrate, TFT drive arrays are then deposited on substrate and are made annealing treatment, Ran Hou
Deposition anode layer and perform etching to form anode pattern in TFT drive arrays.
4. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that in the step B, institute
The material for stating photoresist includes resin, emulsion, solvent and additive.
5. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that the step B is specific
Including step：Coated and photoresist and dried with spin coating proceeding on the anode layer, then in photoresist surface rolling groove and carried out
Etching processing, dries substrate after having suppressed, is crosslinked photoresist by Exposure mode after drying again, is formed up-narrow and down-wide
And the pixel defining layer that upper surface is coarse.
6. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that the step B is specific
Including step：Photoresist is coated with spin coating proceeding on the anode layer and is dried, is then handed over photoresist by Exposure mode
Connection, then to the photoresist after crosslinking be molded and etching processing, the up-narrow and down-wide and coarse upper surface pixel of formation define
Layer.
7. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that the step B is specific
Including step：Coat photoresist for the first time with spin coating proceeding on the anode layer and dry, treat that the photoresist is dried and shaped laggard
Second of coating photoresist of row, followed by drying and sizing, is aligned after two layers of photoresist is shaped with patterned mask plate
It is exposed, forms up-narrow and down-wide and coarse upper surface pixel defining layer.
8. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that in the step C, institute
The solvent for stating the quantum dot of quantum dot light emitting layer is ink, and the ink is by two kinds of different boilings and the solvent of different surfaces tension force
Composition.
9. the preparation method of printing AM-QDLED devices according to claim 1, it is characterised in that after the step D
Further include step：
E, connate water oxygen barrier layer and protective layer after deposited cathode layer, finally paste dehumidizer encapsulation again, are finally completed printing AM-
The preparation of QDLED devices.
10. one kind printing AM-QDLED devices, it is characterised in that using the printing AM- as described in claim 1 ~ 9 is any
The preparation method of QDLED devices is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510764160.8A CN105529409B (en) | 2015-11-11 | 2015-11-11 | One kind printing AM-QDLED devices and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510764160.8A CN105529409B (en) | 2015-11-11 | 2015-11-11 | One kind printing AM-QDLED devices and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105529409A CN105529409A (en) | 2016-04-27 |
| CN105529409B true CN105529409B (en) | 2018-05-08 |
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| CN108832009A (en) * | 2018-05-29 | 2018-11-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of preparation method of inkjet printing AMOLED display panel |
| CN108899345B (en) * | 2018-07-02 | 2021-01-26 | 京东方科技集团股份有限公司 | Pixel defining structure, manufacturing method thereof, display panel and display device |
| CN110299388B (en) * | 2019-06-24 | 2021-07-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| KR20210028790A (en) * | 2019-09-04 | 2021-03-15 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
| CN110534553A (en) * | 2019-09-11 | 2019-12-03 | 昆山国显光电有限公司 | A kind of luminescent device, display device and preparation method |
| CN111584581B (en) * | 2020-05-15 | 2022-11-01 | 武汉华星光电半导体显示技术有限公司 | Color film substrate, preparation method thereof and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008046306A (en) * | 2006-08-14 | 2008-02-28 | Sharp Corp | Substrate for display element, method of manufacturing the same and liquid crystal display element |
| CN101355097A (en) * | 2007-07-23 | 2009-01-28 | 精工爱普生株式会社 | Electrooptical device, electronic apparatus, and method for producing electrooptical device |
| CN102569666A (en) * | 2010-12-09 | 2012-07-11 | 精工爱普生株式会社 | Light emitting device, display apparatus, and electronic apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2437328A (en) * | 2006-04-10 | 2007-10-24 | Cambridge Display Tech Ltd | Electric devices and methods of manufacture |
-
2015
- 2015-11-11 CN CN201510764160.8A patent/CN105529409B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008046306A (en) * | 2006-08-14 | 2008-02-28 | Sharp Corp | Substrate for display element, method of manufacturing the same and liquid crystal display element |
| CN101355097A (en) * | 2007-07-23 | 2009-01-28 | 精工爱普生株式会社 | Electrooptical device, electronic apparatus, and method for producing electrooptical device |
| CN102569666A (en) * | 2010-12-09 | 2012-07-11 | 精工爱普生株式会社 | Light emitting device, display apparatus, and electronic apparatus |
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