CN105529251A - Doping method - Google Patents
Doping method Download PDFInfo
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- CN105529251A CN105529251A CN201410522243.1A CN201410522243A CN105529251A CN 105529251 A CN105529251 A CN 105529251A CN 201410522243 A CN201410522243 A CN 201410522243A CN 105529251 A CN105529251 A CN 105529251A
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Abstract
The invention discloses a doping method, which comprises the steps of: forming a first conduction type doped layer on the front surface of a first conduction type substrate through adopting a thermal diffusion process, and forming a first oxidation layer on the first conduction type doped layer during the diffusion and doping process; forming a second conduction type doping source on the back surface of the first conduction type substrate through deposition; carrying out graphical etching on the second conduction type doping source to expose predetermined regions of the first conduction type substrate; forming first conduction type doped regions on the surface of the predetermined regions through adopting an ion implantation method; and allowing second conduction type ions in the second conduction type doping source to diffuse into the first conduction type substrate while annealing, so as to form second conduction type doped regions. The doping method provided by the invention utilizes the oxidation layer formed during the thermal diffusion process as a mask to achieve local doping of subsequent ion implantation, thus, a mask does not need to be additionally formed, the whole process is very simple, and the continuity is high.
Description
Technical field
The present invention relates to a kind of doping method, particularly relate to a kind of doping method for back contact battery.
Background technology
In semiconductor doping process, usually need the doping realizing local, the selective emitting electrode structure (needing to form Local Gravity doping) of such as solar cell, the structure (PN junction is all formed at the back side of cell piece) of back contact battery, or in MOS (metal-oxide semiconductor (MOS)) pipe, also can need the structure forming local doping.Usually, in order to form the doping of local, needing to use mask (mask), by needing the position of doping to come out, the region overlay without the need to doping being got up.Conventional mask such as photoresist, such as, adopt photoetching to come out needing the position of doping so that follow-up doping.
That is, realize in the technique of local doping in existing needs, inevitably have the step of one formation mask, and the precision of the quality of mask, mask also can affect subsequent technique to a certain extent, add that the formation of mask usually adopts photoetching to realize, and the technique of photoetching can increase cost undoubtedly to a certain extent and increase the complexity of technique.
Summary of the invention
The technical problem to be solved in the present invention be in order under overcoming in prior art the occasion that needs to form local doping unavoidable have one formation mask operation thus add the defect of the complexity of technique, a kind of doping method with height continuity is provided, it makes use of diffuse source in diffusion technology as mask, avoid extra process masks, make full use of the feature of often kind of technique, simplify technological process, improve the continuity between step.
The present invention solves above-mentioned technical problem by following technical proposals:
A kind of doping method, its feature is, it comprises the following steps:
S1: form the first conduction type doped layer by thermal diffusion process in the front of the first conductivity type substrate, and on this first conduction type doped layer, the first oxide layer is formed in diffusing, doping process;
S2: deposit forms the second conduction type doped source on the back side of the first conductivity type substrate;
S3: this second conduction type doped source of patterned etch is to expose the first conductivity type substrate of presumptive area;
S4: form the first conduction type doped region by the mode of ion implantation in the surface of this presumptive area;
S5: while annealing, the second conductive type ion in this second conduction type doped source is diffused in this first conductivity type substrate and form the second conduction type doped region.
In this technical scheme, using the second conduction type diffuse source as mask, for the ion implantation of local, and without the need to extra process masks, the continuity between technique is stronger.
In addition, annealing and diffusing, doping are combined, the injury repair after ion implantation and being formed in same step of the second conduction type doped region is realized, make use of the feature of ion implantation and thermal diffusion process, both are organically combined, simplifies processing step.
Moreover; owing to all needing to form doping in two faces of substrate in this technical scheme; the first oxide layer formed on front when make use of formation first conduction type doped layer, as front mask, protects this first conduction type doped layer, extending influence from step S5.
This technical scheme takes full advantage of the feature of thermal diffusion and ion implantation, the formation of doping step and mask is combined, is highly integrated with each step, simplify overall technique thus.
Preferably, step S0 is comprised before step S1: form matte at the front and back of this first conductivity type substrate.
Preferably, after step S1, also comprise before step S2: etch the edge at the back side of this first conductivity type substrate and the back side of this first conductivity type substrate of polishing.
Preferably, the second conduction type doped source of presumptive area is etched in step S3 by laser or etch paste.
Preferably, this first oxide layer is the first conduction type doped silicon glass, and/or this second conduction type doped source is the second conduction type doped silicon glass.
Preferably, comprise after step S5: remove this first oxide layer and this second conduction type doped source.
Preferably, the thermal diffusion process in step S1 is for spread back-to-back.
Preferably, this second conduction type doped source of APCVD (aumospheric pressure cvd) deposit is passed through in step S2.
The present invention also provides a kind of doping method, and its feature is, it comprises the following steps:
T1: form the first conduction type doped layer by thermal diffusion process in the front of the first conductivity type substrate, and on this first conduction type doped layer, the first oxide layer is formed in diffusing, doping process;
T2: deposit forms the second conduction type doped source on the back side of the first conductivity type substrate;
T3: this second conduction type doped source of patterned etch is to expose the first conductivity type substrate of presumptive area;
SP: form the first conduction type doped region by thermal diffusion process in the surface of this presumptive area, makes the second conductive type ion in this second conduction type doped source diffuse in this first conductivity type substrate simultaneously and forms the second conduction type doped region.
In this technical scheme, using the second conduction type diffuse source as mask, for the formation of the first conduction type doped region of local, and without the need to extra process masks, the continuity between technique is stronger.
Moreover; owing to all needing to form doping in two faces of substrate in this technical scheme; the first oxide layer formed on front when make use of formation first conduction type doped layer, as front mask, protects this first conduction type doped layer, extending influence from step SP.
Preferably, step T0 is comprised before step T1: form matte at the front and back of this first conductivity type substrate.
Preferably, after step T1, also comprise before step T2: etch the edge at the back side of this first conductivity type substrate and the back side of this first conductivity type substrate of polishing.
Preferably, the second conduction type doped source of presumptive area is etched in step T3 by laser or etch paste.
Preferably, this first oxide layer is the first conduction type doped silicon glass, and/or this second conduction type doped source is the second conduction type doped silicon glass.
Preferably, comprise after step SP: remove this first oxide layer and this second conduction type doped source.
Preferably, the thermal diffusion process in step T1 is for spread back-to-back.
Preferably, this second conduction type doped source of APCVD deposit is passed through in step T2.
On the basis meeting this area general knowledge, above-mentioned each optimum condition, can combination in any, obtains the preferred embodiments of the invention.
Positive progressive effect of the present invention is:
1, present invention utilizes diffuse source (such as BSG (Pyrex) or PSG (phosphorosilicate glass)) in thermal diffusion process as mask, realize the local doping that subsequent ion injects, thus, eliminate the technique of extra formation mask, the continuity thus between each step is stronger.
2, annealing and diffusing, doping are combined, the injury repair after ion implantation and being formed in same step of the second conduction type doped region are realized, make use of the feature of ion implantation and thermal diffusion process, both are organically combined, simplifies processing step.
3, in a technical scheme of the present invention, utilize diffuse source as mask, for stopping first conductive type impurity at the back side, and make the second conductive type impurity in diffuse source enter substrate back simultaneously, namely in a procedure, form P district and the N district at the back side simultaneously, simplify manufacture craft.
4, thermal diffusion process is adopted to form doped layer and first oxide layer of substrate face; and the protection mask using the first oxide layer as back side diffusion; in order to avoid the doped layer that front has been formed is subject to the impact of back side diffusion; make full use of the feature of thermal diffusion process, make the integrated level of integrated artistic higher.
Accompanying drawing explanation
Fig. 1-7 is the process chart of the embodiment of the present invention 1.
Fig. 8 is the structural representation that the embodiment of the present invention 2 obtains.
Embodiment
Mode below by embodiment further illustrates the present invention, but does not therefore limit the present invention among described scope of embodiments.The experimental technique of unreceipted actual conditions in the following example, conventionally and condition, or selects according to catalogue.
Embodiment 1
With reference to figure 1, this first conductivity type substrate 1 front and back formed matte, in the present embodiment using the upper surface of substrate as front, lower surface is as the back side.
With reference to figure 2, in the front of the first conductivity type substrate 1, form the first conduction type doped layer 2 by thermal diffusion process, and on this first conduction type doped layer 2, form the first oxide layer 3 in diffusing, doping process.Wherein, in this step, thermal diffusion process is for spread back-to-back, and the back side of this first conductivity type substrate can not be subject to doping impact like this.
With reference to figure 3, etch the edge at the back side of this first conductivity type substrate 1 and the back side of this first conductivity type substrate of polishing.
With reference to figure 4, APCVD deposit on the back side of the first conductivity type substrate 1 is adopted to form the second conduction type doped source 4.
With reference to figure 5, this second conduction type doped source of patterned etch, to expose the first conductivity type substrate of presumptive area 5, wherein etches the second conduction type doped source of presumptive area by laser or etch paste.
With reference to figure 6, in the surface of this presumptive area, form the first conduction type doped region 6, first conductive type ion by the mode of ion implantation and be injected into formation doping in the substrate of presumptive area.
With reference to figure 7, while annealing, the second conductive type ion in this second conduction type doped source 4 is diffused in this first conductivity type substrate and form the second conduction type doped region 41.Remove first oxide layer 3 in the first conductivity type substrate front afterwards.
In the present embodiment, the second conduction type doped source is doped source, again as mask to realize the ion implantation of local, the annealing simultaneously after ion implantation and the formation of the second conduction type doped region are also complete in one step, and processing procedure greatly simplifies.
Embodiment 2
The principle of embodiment 2 is identical with embodiment 1, and difference is only:
After forming the structure shown in Fig. 7, with reference to figure 8, except removing first oxide layer 3 in front, also remove the second conduction type doped source 4 at the back side, obtain the structure shown in Fig. 8.Such as can remove the first oxide layer and the second conduction type doped source by the method for cleaning.
All the other not mentioned part reference examples 1.
Embodiment 3
The general principle of embodiment 3 is identical with embodiment 1, and difference is all to adopt the mode of thermal diffusion to form doping, specific as follows:
With reference to figure 1-Fig. 5, the doping treatment in front and the deposit of the second conduction type doped source and the equal reference example 1 of graphical treatment, after forming the structure shown in Fig. 5, as different from Example 1, with reference to figure 7, in the surface of this presumptive area, form the first conduction type doped region (not shown first conduction type doped source) by thermal diffusion process in the present embodiment, make the second conductive type ion in this second conduction type doped source diffuse in this first conductivity type substrate simultaneously and form the second conduction type doped region.
Herein; without the need to arranging protective layer in addition in advance; this first oxide layer 3 before formed during first time thermal diffusion just can as protection mask; the first conduction type doped layer 2 in front is protected, avoids the first conduction type doped layer that the front that extends influence of the back side first conductive type impurity and the second conductive type impurity has been formed.
All the other not mentioned parts are with reference to above-described embodiment.
In order to clearly illustrate the structures such as each doped region, oxide layer (such as BSG, PSG), doped source (such as BSG, PSG), matte, the size of the above-mentioned various piece in accompanying drawing is not described in proportion, and those skilled in the art are to be understood that the ratio in accompanying drawing is not limitation of the present invention.In addition, above-mentioned front and back is also all comparatively speaking, and those skilled in the art should know such convenience representing description in conjunction with the common practise of this area, not should be understood to limitation of the present invention.
Although the foregoing describe the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is defined by the appended claims.Those skilled in the art, under the prerequisite not deviating from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these change and amendment all falls into protection scope of the present invention.
Claims (9)
1. a doping method, is characterized in that, it comprises the following steps:
S1: form the first conduction type doped layer by thermal diffusion process in the front of the first conductivity type substrate, and on this first conduction type doped layer, the first oxide layer is formed in diffusing, doping process;
S2: deposit forms the second conduction type doped source on the back side of the first conductivity type substrate;
S3: this second conduction type doped source of patterned etch is to expose the first conductivity type substrate of presumptive area;
S4: form the first conduction type doped region by the mode of ion implantation in the surface of this presumptive area;
S5: while annealing, the second conductive type ion in this second conduction type doped source is diffused in this first conductivity type substrate and form the second conduction type doped region.
2. doping method as claimed in claim 1, is characterized in that, comprise step S0 before step S1: form matte at the front and back of this first conductivity type substrate.
3. doping method as claimed in claim 1 or 2, is characterized in that, also comprise after step S1, before step S2: etch the edge at the back side of this first conductivity type substrate and the back side of this first conductivity type substrate of polishing.
4. doping method as claimed in claim 1, be is characterized in that, etched the second conduction type doped source of presumptive area in step S3 by laser or etch paste.
5. doping method as claimed in claim 1, it is characterized in that, this first oxide layer is the first conduction type doped silicon glass, and/or this second conduction type doped source is the second conduction type doped silicon glass.
6. doping method as claimed in claim 1, is characterized in that, comprise after step S5: remove this first oxide layer and this second conduction type doped source.
7. doping method as claimed in claim 1, it is characterized in that, the thermal diffusion process in step S1 is for spread back-to-back.
8. doping method as claimed in claim 1, is characterized in that, by this second conduction type doped source of APCVD deposit in step S2.
9. as the doping method in claim 1-8 as described in any one, it is characterized in that, step S4 and step S5 replaces with:
Step SP: form the first conduction type doped region by thermal diffusion process in the surface of this presumptive area, makes the second conductive type ion in this second conduction type doped source diffuse in this first conductivity type substrate simultaneously and forms the second conduction type doped region.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410522243.1A CN105529251A (en) | 2014-09-30 | 2014-09-30 | Doping method |
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| CN201410522243.1A CN105529251A (en) | 2014-09-30 | 2014-09-30 | Doping method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192817A (en) * | 2018-09-05 | 2019-01-11 | 浙江晶科能源有限公司 | A kind of N-shaped preparation method of solar battery and N-shaped solar battery |
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| US20090068783A1 (en) * | 2007-08-31 | 2009-03-12 | Applied Materials, Inc. | Methods of emitter formation in solar cells |
| CN101443893A (en) * | 2005-12-21 | 2009-05-27 | 太阳能公司 | Back side contact solar cell structures and fabrication processes |
| CN101916795A (en) * | 2010-07-05 | 2010-12-15 | 晶澳太阳能有限公司 | Method for passivating back of crystal silicon solar cell |
| CN103887347A (en) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | Double-face P-type crystalline silicon battery structure and manufacturing method thereof |
| US20140179054A1 (en) * | 2011-08-05 | 2014-06-26 | Imec | Method for forming patterns of differently doped regions |
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- 2014-09-30 CN CN201410522243.1A patent/CN105529251A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101443893A (en) * | 2005-12-21 | 2009-05-27 | 太阳能公司 | Back side contact solar cell structures and fabrication processes |
| US20090068783A1 (en) * | 2007-08-31 | 2009-03-12 | Applied Materials, Inc. | Methods of emitter formation in solar cells |
| CN101916795A (en) * | 2010-07-05 | 2010-12-15 | 晶澳太阳能有限公司 | Method for passivating back of crystal silicon solar cell |
| US20140179054A1 (en) * | 2011-08-05 | 2014-06-26 | Imec | Method for forming patterns of differently doped regions |
| CN103887347A (en) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | Double-face P-type crystalline silicon battery structure and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109192817A (en) * | 2018-09-05 | 2019-01-11 | 浙江晶科能源有限公司 | A kind of N-shaped preparation method of solar battery and N-shaped solar battery |
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