CN105529007B - LCOS shows the drive circuit of ITO electrode in structure - Google Patents
LCOS shows the drive circuit of ITO electrode in structure Download PDFInfo
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- CN105529007B CN105529007B CN201610067077.XA CN201610067077A CN105529007B CN 105529007 B CN105529007 B CN 105529007B CN 201610067077 A CN201610067077 A CN 201610067077A CN 105529007 B CN105529007 B CN 105529007B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
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Abstract
The invention provides the drive circuit that a kind of LCOS shows ITO electrode in structure, is integrated in LCOS and shows in structure, and the drive circuit shows that the operating voltage of structure generates the driving voltage of ITO electrode according to LCOS.So that the drive circuit and LCOS of ITO electrode show that structure uses identical power supply, so as to reduce the supply voltage of drive circuit to adapt to advanced technique, reduce chip size, save power consumption, it can also ensure that ITO electrode and LCOS show voltage signal Complete Synchronization between structure, to ensure that ITO electrode and LCOS show that the voltage between structure is constantly in the state of DC balances so that LCOS shows that the service life of liquid crystal material in structure is guaranteed.The LCOS shows that the drive circuit of ITO electrode in structure is integrated in LCOS and shown in structure, reduces the cabling on PCB, reduces cost, reduce the interference of ambient noise, improves jamproof ability.
Description
Technical field
The present invention relates to application of electronic technology field, especially a kind of LCOS shows the drive circuit of ITO electrode in structure.
Background technology
Liquid crystal display is (the Top electrode and bottom electrode) filling liquid crystal material between two-plate, by change between pole plate voltage come
Change the arrangement situation of liquid crystal material interior molecules, to reach the purpose of shading and printing opacity.And the characteristic of liquid crystal material determines
Voltage will exceed the display effects that can be only achieved of 5V between two-plate, and between pole plate voltage be DC (Direct Current, directly
Stream) balance, it otherwise can reduce life-span of liquid crystal material.
As shown in figure 1, common LCOS liquid crystal display panels include substrate 101, ITO electrode 102 and LCOS display knots
Structure 103, the ITO electrode 102 are formed on the substrate 101, and the LCOS shows that structure 103 includes liquid crystal material and silicon
Substrate, formed with metal electrode (i.e. bottom electrode) in the silicon base, the liquid crystal material is formed at the silicon base and ITO electricity
Between pole (i.e. Top electrode) 102.In order to ensure the display effect of liquid crystal material and service life, the ITO electrode 102 and metal
Voltage between electrode must be exceeded 5V, and be that DC is balanced.
Therefore, it is necessary to add the square-wave voltage by a relatively large margin of a cycle change in the ITO electrode 102, such as Fig. 2 institutes
Show, square-wave voltage ITO amplitude is fixed, such as amplitude is 7V.And show the metal inside structure 103 in LCOS simultaneously
On electrode plus a same phase and the controllable square wave voltage signal V0 of signal amplitude, to control the ITO electrode and metal electricity
Voltage V1 size and Orientation between pole so that liquid crystal display reaches best display effect.
Currently, conventional way is that the voltage signal of the ITO electrode is produced on pcb board, then again believes the voltage
Number input to the LCOS show structure.Consequently, it is possible to which the ITO electrode and LCOS show that structure needs different power supplys, increase
Add number of power sources, while also increased the power consumption and area of pcb board, add cost.Moreover, the LCOS shows structure
Supply voltage requirement is more than 5V, and causing, which can not use advanced manufacturing process to make LCOS, shows structure, also results in cost
Increase.Further, due to the voltage signal of the ITO electrode be on the pcb board caused by, and on the metal electrode
Voltage signal not necessarily can Complete Synchronization, also allow for accomplish to match completely therebetween, also allow for institute
The state of DC balances can not be constantly in by stating liquid crystal material, so as to have influence on the service life of the liquid crystal material.Further
, the cabling on the pcb board is easily disturbed by ambient noise, so as to reduce the anti-interference energy of the liquid crystal display
Power.
The content of the invention
It is an object of the invention to provide the drive circuit that a kind of LCOS shows ITO electrode in structure, to solve ITO electrode
With the problem of voltage signal is unable to Complete Synchronization on metal electrode.
Another object of the present invention is to solve the problems, such as that LCOS liquid crystal display panel costs of manufacture are high.
In order to achieve the above object, the invention provides the drive circuit that a kind of LCOS shows ITO electrode in structure, integrate
Shown in LCOS in structure, including：Power supply generation module and selecting module；
The power supply generation module is used for the operating voltage generation driving ITO electrode needs that structure is shown according to the LCOS
Voltage；
The selecting module is used to drive the voltage generation required for ITO electrode according to caused by the power supply generation module
The driving voltage of the ITO electrode.
Preferably, show that in structure in the drive circuit of ITO electrode, the LCOS shows the work of structure in above-mentioned LCOS
Include as voltage：First operating voltage and the second operating voltage, the magnitude of voltage of first operating voltage are more than second work
Make the magnitude of voltage of voltage；The driving ITO electrode required voltage includes：3rd operating voltage and the 4th operating voltage, it is described
The magnitude of voltage of 3rd operating voltage is more than the magnitude of voltage of the 4th operating voltage.
Preferably, shown in above-mentioned LCOS in structure in the drive circuit of ITO electrode, the power supply generation module bag
Include：
Power stage module, for generate it is described driving ITO electrode required for voltage；And
Feedback control module, for controlling the controlling switch of the power stage module, given birth to stablizing the power stage module
Into driving ITO electrode required for voltage.
Preferably, shown in above-mentioned LCOS in structure in the drive circuit of ITO electrode, the feedback control module bag
Include：
First circuit, second circuit, tertiary circuit, logic controller and the 3rd comparator；
The output end of the second circuit and tertiary circuit respectively with the first input end of the logic controller and second
Input is connected, and the output end of the logic controller is connected with the input of the power stage module；
The normal phase input end of 3rd comparator is connected to the power stage module, and inverting input is connected to threshold value electricity
Pressure, output end are connected to the 3rd input of the logic controller.
Preferably, show that the power stage module includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：
Drive circuit module and power generation module, the output end of the drive circuit module and the input of the power generation module
Connection, the output end of the power generation module export the 3rd operating voltage and the 4th operating voltage.
Preferably, shown in above-mentioned LCOS in structure in the drive circuit of ITO electrode, the power generation module bag
Include：
The first MOS transistor and the 5th MOS transistor of series connection, the grid end of first MOS transistor are connected to described
First output end of drive circuit module, source are connected to first operating voltage, and the grid end of the 5th MOS is connected to
Ground, drain terminal are connected to fourth node；
The 7th MOS transistor and the 3rd MOS transistor of series connection, the grid end of the 7th MOS transistor are connected to described
Second operating voltage, drain terminal are connected to the fourth node, and the grid end of the 3rd MOS transistor is connected to the drive circuit
Second output end of module, source are connected to the 5th node；
The 4th MOS transistor and the 8th MOS transistor of series connection, the grid end of the 4th MOS transistor are connected to described
3rd output end of drive circuit module, source are connected to the 6th node, and the grid end of the 8th MOS transistor is connected to described
Second operating voltage, drain terminal are connected to the 7th node；
The 6th MOS transistor and the second MOS transistor of series connection, the grid end of the 6th MOS transistor are connected to described
First operating voltage, drain terminal are connected to the 7th node, and the grid end of second MOS transistor is connected to the drive circuit
4th output end of module, source are connected to ground；
Inductance, its both ends are connected to the fourth node and the 7th node；
4th electric capacity, its both ends are connected to the 5th node and ground, and the voltage of the 5th node is described the
Four operating voltages；
5th electric capacity, its both ends are connected to the 6th node and ground, and the voltage of the 6th node is described the
Three operating voltages.
Preferably, shown in above-mentioned LCOS in structure in the drive circuit of ITO electrode, the feedback control module bag
Include：First circuit, second circuit and tertiary circuit.
Preferably, show that the power stage module includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：
First charge pump, the second charge pump, the 6th electric capacity and the 7th electric capacity；
The clock of first charge pump and the second charge pump is synchronous；
The first input end of first charge pump is connected with the output end of the second circuit, the second input with it is described
First operating voltage is connected, and output end is connected with the 3rd operating voltage, and is connected to ground by one the 6th electric capacity；
The first input end of second charge pump is connected with the output end of the tertiary circuit, and the second input connects with ground
Connect, output end is connected with the 4th operating voltage, and is connected to ground by one the 7th electric capacity.
Preferably, show that first circuit includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：The
One resistance, second resistance and the first electric capacity, one end of the first resistor are connected to first operating voltage, the other end and institute
The one end for stating second resistance is series at first node, and the other end of the second resistance is connected to ground, the first node connection
In a reference voltage, first electric capacity and second resistance are parallel between the first node and ground.
Preferably, show that the second circuit includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：The
One comparator, 3rd resistor, the 4th resistance and the second electric capacity；The normal phase input end of the first comparator is connected to the second section
Point, one end of the 3rd resistor and one end of the 4th resistance are series at the section point, the other end of the 3rd resistor
The 3rd operating voltage is connected to, the other end of the 4th resistance is connected to ground, second electric capacity and the described 3rd electricity
Resistance is parallel between the section point and ground；Inverting input is connected to the reference voltage；Output end is connected to logic control
The input of device processed.
Preferably, show that the tertiary circuit includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：The
Two comparators, the 5th resistance, the 6th resistance and the 3rd electric capacity；The normal phase input end of second comparator is connected to the reference
Voltage；Inverting input is connected to the 3rd node, and one end of the 5th resistance and one end of the 6th resistance are series at described the
Three nodes, the other end of the 5th resistance are connected to first operating voltage, and the other end of the 6th resistance is connected to
4th operating voltage, the 3rd electric capacity is with the 6th resistor coupled in parallel in first operating voltage and the 4th work electricity
Between pressure；Output end is connected to the logic controller；
The resistance of the first resistor and second resistance is equal, and the resistance of the 3rd resistor and the 6th resistance is equal, institute
State that the resistance of the 4th resistance and the 5th resistance is equal, the magnitude of voltage of first operating voltage is the magnitude of voltage of the reference voltage
Twice.
Preferably, show that the selecting module includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：The
One level conversion and drive module, second electrical level conversion and drive module, the 9th MOS transistor, the tenth MOS transistor, the tenth
One MOS transistor, the 12nd MOS transistor and protection circuit；
The source of 9th MOS transistor is connected with the 3rd operating voltage, drain terminal and the 12nd MOS crystal
The source of pipe is series at the 8th node, and grid end is connected to the output end of first level conversion and drive module；
The drain terminal of 12nd MOS transistor is series at the 9th node with the drain terminal of the 11st MOS transistor, institute
State the grid end of the 11st MOS transistor and be connected to protelum point, the protelum point connection with the grid of the 12nd MOS transistor
In second operating voltage；
The source of 11st MOS transistor is series at the 11st node with the drain terminal of the tenth MOS transistor, institute
The grid end for stating the tenth MOS transistor is connected to the output end of the second electrical level conversion and drive module, and drain terminal is connected to described
4th operating voltage；
The input of first level conversion and drive module is connected to the clock signal that the LCOS shows structure, and two
Individual reference edge is connected to the 3rd operating voltage and the second operating voltage；
The input of second electrical level conversion and drive module is connected to the clock signal that the LCOS shows structure, and two
Individual reference edge is connected to second operating voltage and the 4th operating voltage；
8th node, the 9th node and the 11st node are connected with the protection circuit respectively.
Preferably, show that the protection circuit includes in structure in the drive circuit of ITO electrode in above-mentioned LCOS：The
Seven resistance, the 8th resistance, the 9th resistance, the first electrostatic releaser, the second electrostatic releaser, the 3rd electrostatic releaser and the 4th
Electrostatic releaser；
One end of 7th resistance is connected to the 8th node, and the other end is connected to first electrostatic releaser
Grid end, the grid end of first electrostatic releaser connect with source, and are connected with the drain terminal of the 3rd electrostatic releaser, described
The source of 3rd electrostatic releaser connects with grid end, and is connected with second operating voltage；
One end of 8th resistance is connected to the 9th node, and the other end is connected to the 12nd node, and described first
The drain terminal of the drain terminal of electrostatic releaser and second electrostatic releaser is connected to the 12nd node, the 12nd node
Voltage be the ITO electrode driving voltage；
One end of 9th resistance is connected to the 11st node, and the other end is connected to second electrostatic releaser
Grid end and source, the grid end of second electrostatic releaser connects with source, and with the drain terminal of the 4th electrostatic releaser
Connection, the grid end of the 4th electrostatic releaser connects with source, and is connected to second operating voltage；
The resistance value of 7th resistance and the 9th resistance is equal.
Show that in structure in the drive circuit of ITO electrode, the drive circuit is integrated in described in LCOS provided by the invention
LCOS shows in structure that power supply generation module is used for the operating voltage generation driving ITO electrode that structure is shown according to the LCOS
Required voltage, selecting module are used to drive the voltage generation required for ITO electrode according to caused by the power supply generation module
The driving voltage of the ITO electrode.So that the drive circuit and LCOS of the ITO electrode show that structure uses identical power supply,
So as to reduce the supply voltage of drive circuit to adapt to advanced technique, reduce chip size, save power consumption, it can also be ensured that institute
State ITO electrode and LCOS and show voltage signal Complete Synchronization between structure, with ensure the ITO electrode and LCOS show structure it
Between voltage be constantly in the states of DC balances so that the LCOS shows that the service life of liquid crystal material in structure is protected
Card.Further, the LCOS shows that the drive circuit of ITO electrode in structure is integrated in LCOS and shown in structure, reduces on PCB
Cabling, reduce cost, reduce the interference of ambient noise, improve jamproof ability.
Brief description of the drawings
Fig. 1 is the structural representation of liquid crystal display in the prior art；
Fig. 2 is that the voltage between ITO electrode, metal electrode and the ITO electrode and metal electrode is believed in the prior art
Number schematic diagram；
Fig. 3 is the structural representation that LCOS shows the drive circuit of ITO electrode in structure in the embodiment of the present invention one；
Fig. 4 is the circuit diagram of feedback control module in the embodiment of the present invention one；
Fig. 5 is the schematic diagram of power stage module in the embodiment of the present invention one；
Fig. 6 is the circuit diagram of power generation module in the embodiment of the present invention one；
Fig. 7 is the circuit diagram of selecting module in the embodiment of the present invention one；
Fig. 8 is the circuit diagram of power stage module in the embodiment of the present invention two；
In figure：101- substrates；102-ITO electrodes；103-LCOS shows structure；
200- power supply generation modules；300- selecting modules；201- feedback control modules；202- power stage modules；
First operating voltage-VDD3；Second operating voltage-VDD；3rd operating voltage-VP；4th operating voltage-VN；
The circuits of 2011- first；2012- second circuits；2013- tertiary circuits；The comparators of 2014- the 3rd；2015- logic controllers；
2016- first comparators；The comparators of 2017- second；REF- reference voltages；
2021- drive circuit modules；2022- power generation modules；
301- protection circuits；The level conversions of 302- first and drive module；303- second electrical levels are changed and drive module；
The charge pumps of 401- first；The charge pumps of 402- second.
Embodiment
The embodiment of the present invention is described in more detail below in conjunction with schematic diagram.According to description below and
Claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and
Using non-accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment one
The embodiments of the invention provide the drive circuit that a kind of LCOS shows ITO electrode in structure, as shown in figure 3, including
Power supply generation module 200 and selecting module 300, the power supply generation module 200 are used for the work that structure is shown according to the LCOS
Make voltage generation driving ITO electrode required voltage, the selecting module 300 is used to produce according to the power supply generation module 200
Voltage required for raw driving ITO electrode generates the driving voltage of the ITO electrode.
The LCOS shows that the operating voltage of structure includes：First operating voltage VDD3 and the second operating voltage VDD, it is described
First operating voltage VDD3 magnitude of voltage is more than the magnitude of voltage of the second operating voltage VDD.What the driving ITO electrode needed
Voltage includes：3rd operating voltage VP and the 4th operating voltage VN, the 3rd operating voltage VP magnitude of voltage are more than described the
Four operating voltage VN magnitude of voltage.
Specifically, the power supply generation module 200 includes power stage module 202 and feedback control module 201, the power
Level module 202 is used to generate the voltage required for driving ITO electrode, i.e., described 3rd operating voltage VP and the 4th operating voltage
VN.The feedback control module 201 is used for the controlling switch for controlling the power stage module 202, to stablize the power stage mould
Voltage required for the driving ITO electrode that block 202 generates.
As shown in figure 4, the feedback control module 201 includes but is not limited to：First circuit 2011, second circuit 2012,
Tertiary circuit 2013, the comparator 2014 of logic controller 2015 and the 3rd.The second circuit 2012 and tertiary circuit 2013
Output end be connected respectively with the first input end of the logic controller 2015 and the second input, the logic controller
2015 output end is connected with the input of the power stage module 202.The normal phase input end of 3rd comparator 2014 connects
The power stage module 202 is connected to, inverting input is connected to threshold voltage, and output end is connected to the logic controller 2015
The 3rd input.
First circuit 2011 includes：First resistor, second resistance and the first electric capacity C1, one end of the first resistor
It is connected to the first operating voltage VDD3, one end of the other end and the second resistance is series at first node D1, and described the
The other end of two resistance is connected to ground, and the first node D1 is connected to reference voltage a REF, the first electric capacity C1 and second
Resistor coupled in parallel is between the first node D1 and ground.Wherein, the resistance of the first resistor and second resistance is equal, i.e. R1=
R2。
The second circuit 2012 includes：First comparator 2016,3rd resistor, the 4th resistance and the second electric capacity C2；Institute
The normal phase input end for stating first comparator 2016 is connected to section point D2, one end of the 3rd resistor and the one of the 4th resistance
End is series at the section point D2, and the other end of the 3rd resistor is connected to the 3rd operating voltage VP, and the described 4th
The other end of resistance is connected to ground, and the second electric capacity C2 and the 3rd resistor are parallel to the section point D2 and ground
Between；Inverting input is connected to the reference voltage REF；Output end is connected to the input of logic controller 2015.
The tertiary circuit 2013 includes：Second comparator 2017, the 5th resistance, the 6th resistance and the 3rd electric capacity C3；Institute
The normal phase input end for stating the second comparator 2017 is connected to the reference voltage REF；Inverting input is connected to the 3rd node D3,
One end of 5th resistance is series at the 3rd node D3 with one end of the 6th resistance, and the other end of the 5th resistance connects
It is connected to the first operating voltage VDD3, the other end of the 6th resistance is connected to the 4th operating voltage VN, and described
Three electric capacity C3 and the 6th resistor coupled in parallel are between the first operating voltage VDD3 and the 4th operating voltage VN；Output end connects
It is connected to the logic controller 2015.Wherein, the 3rd resistor and the resistance of the 6th resistance are equal, the 4th resistance and
The resistance of five resistance is equal, twice of the magnitude of voltage that the magnitude of voltage of the first operating voltage VDD3 is the reference voltage REF.
That is R3=R6, R4=R5, REF=(VDD3)/2.
It can be derived by Fig. 4：
(formula 1)
(formula 2)
Because the LCOS shows that the uniformity on power supply in structure and ground is good, as long as so that between resistance R1~R6
With good, you can so that the 3rd operating voltage VP and the 4th operating voltage VN accurately follows first operating voltage
VDD3 and the second operating voltage VDD.
That is VP-VDD3=GND-VN.(formula 3)
As shown in figure 5, structure of the power stage module 202 using single-inductance double-output, including drive circuit module
2021 and power generation module 2022, the output end of the drive circuit module 2021 it is defeated with the power generation module 2022
Enter end connection, the output end of the power generation module 2022 exports the 3rd operating voltage VP and the 4th operating voltage VN.
As shown in fig. 6, the power generation module 2022 includes but is not limited to：The first MOS transistor and the 5th of series connection
MOS transistor, the grid end of first MOS transistor are connected to the first output end of the drive circuit module 2021, source
The first operating voltage VDD3 is connected to, the grid end of the 5th MOS is connected to ground, and drain terminal is connected to fourth node D4；String
The 7th MOS transistor M7 and the 3rd MOS transistor M3 of connection, the grid end of the 7th MOS transistor are connected to second work
Make voltage VDD, drain terminal is connected to the fourth node D4, and the grid end of the 3rd MOS transistor is connected to the drive circuit
Second output end of module 2021, source are connected to the 5th node D5；The 4th MOS transistor M4 and the 8th MOS crystal of series connection
Pipe M8, the 4th MOS transistor M4 grid end are connected to the 3rd output end of the drive circuit module 2021, source connection
In the 6th node D6, the grid end of the 8th MOS transistor M8 is connected to the second operating voltage VDD, and drain terminal is connected to
Seven node D7；The 6th MOS transistor M6 and the second MOS transistor M2 of series connection, the 6th MOS transistor M6 grid end connection
In the first operating voltage VDD3, drain terminal is connected to the 7th node D7, the grid end connection of the second MOS transistor M2
In the 4th output end of the drive circuit module 2021, source is connected to ground；Inductance, its both ends are connected to the described 4th
Node D4 and the 7th node D7；4th electric capacity C4, its both ends are connected to the 5th node D5 and ground, the 5th node
D5 voltage is the 4th operating voltage VN；5th electric capacity C5, its both ends are connected to the 6th node D6 and ground, institute
The voltage for stating the 6th node D6 is the 3rd operating voltage VP.
Wherein, the first MOS transistor M1, the 4th MOS transistor M4, the 5th MOS transistor M5 and the 8th MOS crystal
Pipe M8 is N-type MOS transistor, the second MOS transistor M2, the 3rd MOS transistor M3, the 6th MOS transistor M6 and the 7th
MOS transistor M7 is N-type MOS transistor.
Ensure that each MOS transistor will not overvoltage by the way of MOS transistor series connection in the power stage module 202.
When the absolute value of voltage of the 3rd operating voltage VP and the 4th operating voltage VN reduces, the 3rd comparator 2014 can be sent out
Raw upset, the first MOS transistor M1 and the 2nd MOS crystal for being by the Logic control module and drive circuit module 2021
Pipe M2 is opened, to the induction charging.The signal of the normal phase input end connection of 3rd comparator 2014 is according to the electricity
The voltage signal of the current signal conversion of sense.Rise with the electric current of the inductance, institute is reached according to the voltage signal of its conversion
After stating threshold voltage, if the 3rd operating voltage VP is low, the second MOS transistor M2 disconnects, the 4th MOS crystal
Pipe M4 is turned on, and the 5th electric capacity C5 is charged, to increase the absolute value of voltage of the 3rd operating voltage VP.It is if described
4th operating voltage VN is more than the threshold voltage, then the first MOS transistor M1 disconnects, the 3rd MOS transistor M3
Conducting, charges to the 4th electric capacity C4, to increase the absolute value of voltage of the 4th operating voltage VN.
The threshold voltage is related to the conducting resistance of each MOS transistor in the power stage module 202.Its magnitude of voltage
For 0.5V~3V, can specifically be set according to actual conditions.
As shown in fig. 7, the selecting module 300 includes but is not limited to：First level conversion and drive module 302, second
Level conversion and drive module 303, the 9th MOS transistor M9, the tenth MOS transistor M10, the 11st MOS transistor M11,
12 MOS transistor M12 and protection circuit 301；Specifically, the source of the 9th MOS transistor M9 and the 3rd work
Make voltage VP connections, the source of drain terminal and the 12nd MOS transistor M12 is series at the 8th node D8, and grid end is connected to institute
State the output end of the first level conversion and drive module 302；The drain terminal and the described 11st of the 12nd MOS transistor M12
MOS transistor M11 drain terminal is series at the 9th node D9, end and the 12nd MOS crystal of the 11st MOS transistor M11
Pipe M12 grid is connected to protelum point D10, the protelum point D10 and is connected to the second operating voltage VDD；Described
11 MOS transistor M11 source and the tenth MOS transistor M10 drain terminal are series at the 11st node D11, and described the
Ten MOS transistor M10 grid end is connected to the output end of the second electrical level conversion and drive module 303, and drain terminal is connected to institute
State the 4th operating voltage VN；The input of first level conversion and drive module 302 is connected to the LCOS and shows structure
Clock signal Sel, two reference edges are connected to the 3rd operating voltage VP and the second operating voltage VDD；Described
The input of two level conversions and drive module 303 is connected to the clock signal Sel that the LCOS shows structure, two reference edges
It is connected to the second operating voltage VDD and the 4th operating voltage VN；The 8th node D8, the 9th node D9 and
11 node D11 are connected with the protection circuit 301 respectively.
First level conversion and drive module would operate in VDD and GND power domains clock signal Sel be transformed into VP and
The clock signal of VDD power domains is driving the 9th MOS transistor M9 grid.Second electrical level is changed and drive module is by clock
Signal Sel is transformed into the clock signals of VDD and VN power domains to drive the tenth MOS transistor M10 grid.
Wherein, the 9th MOS transistor M9 and the 12nd MOS transistor M12 is N-type MOS transistor, the described tenth
MOS transistor M10 and the 11st MOS transistor M11 is N-type MOS transistor.First electrostatic releaser and the 4th electrostatic are released
It is N-type MOS transistor to put device, and second electrostatic releaser and the 3rd electrostatic releaser are N-type MOS transistor.
Using the first operating voltage VDD3 as 3.3V, the second operating voltage VDD is 1.5V, the 3rd work electricity
Pressure VP is 5.3V, exemplified by the 4th operating voltage VN is -2V, between the 3rd operating voltage VP and the 4th operating voltage VN
Have 7.3V pressure difference, the operating voltage of the MOS transistor selected in the present embodiment is 3.3V, with reach reduce power consumption and into
This, while have the purpose of enough pressure differences between and can guarantee the 3rd operating voltage VP and the 4th operating voltage VN.So as to
Any one MOS transistor in the present embodiment is caused can not to bear 7.3V high pressure.Therefore in the selecting module 300
Multiple MOS transistors are together in series, for example, the series connection of the 9th MOS transistor M9 and the 12nd MOS transistor M12, institute
State the 11st MOS transistor M11 and the tenth MOS transistor M10 series connection.
The 9th MOS transistor M9, the tenth MOS transistor M10, the 11st MOS transistor M11 and the 12nd MOS are brilliant
Body pipe M12 substrate connects with respective source.The 11st MOS transistor M11's and the 12nd MOS transistor M12
Grid end is connected with the second operating voltage VDD, and the grid end of the 9th MOS transistor M9 connects the 3rd operating voltage
Control circuit output between VP and the second operating voltage VDD, the grid end connection described second of the tenth MOS transistor M10
Control circuit output between operating voltage VDD and the 4th operating voltage VN.So the 9th MOS transistor M9 and the tenth
MOS transistor M10 is normal open.
When the voltage of the 9th node D9, i.e., the driving voltage output of described ITO electrode is the 3rd operating voltage
During VP, the tenth MOS transistor M10 disconnects, and the 11st MOS transistor M11 is by the voltage of the 11st node D11
It is limited in (the second operating voltage VDD-Vthn), wherein Vthn is the threshold value electricity of N-type MOS transistor in the embodiment of the present invention
Pressure, generally 0.3V~1V, is specifically 0.7V, therefore the value of (the second operating voltage VDD-Vthn) is (1.5V-
0.7V)=0.8V, M10 and M11 source-drain voltage are both less than 4.5V, less than the breakdown voltage 5V of MOS transistor；When the described 9th
Node D9 voltage, i.e., when the driving voltage output of described ITO electrode is the 4th operating voltage VN, the 9th MOS is brilliant
Body pipe M9 is disconnected, and the voltage of the 8th node D8 is limited in (the second work electricity by the 12nd MOS transistor M12
Press VDD+Vthp), wherein Vthp is the threshold voltage of N-type MOS transistor in the embodiment of the present invention, generally 0.3V~1V, is had
Body for 0.7V, therefore the value of (the second operating voltage VDD+Vthp) is (1.5V+0.7V)=2.2V, M9 and M12 source
Drain voltage is both less than 4.4V, less than the breakdown voltage 5V of MOS transistor.Therefore the 9th MOS transistor M9, the tenth MOS are brilliant
Body pipe M10, the 11st MOS transistor M11 and the 12nd MOS transistor M12 will not overvoltages.
In other embodiments of the invention, the change of the plate voltage needed with liquid crystal display material, can also be selected
The MOS transistors of other operating voltages is selected to realize technical scheme.It will not be repeated here.
The protection circuit 301 includes but is not limited to：7th resistance R7, the 8th resistance R8, the 9th resistance R9, the first electrostatic
Release ESD1, the second electrostatic releaser ESD2, the 3rd electrostatic releaser ESD3 and the 4th electrostatic releaser ESD4；Described
Seven resistance R7 one end is connected to the 8th node D8, and the other end is connected to the grid end of the first electrostatic releaser ESD1,
The grid end of the first electrostatic releaser ESD1 connects with source, and is connected with the drain terminal of the 3rd electrostatic releaser ESD3,
The source of the 3rd electrostatic releaser ESD3 connects with grid end, and is connected with the second operating voltage VDD；8th electricity
Resistance R8 one end is connected to the 9th node D9, and the other end is connected to the 12nd node D12, first electrostatic releaser
ESD1 drain terminal and the second electrostatic releaser ESD2 drain terminal are connected to the 12nd node D12, the 12nd section
Point D12 voltage is the driving voltage of the ITO electrode；One end of the 9th resistance R9 is connected to the 11st node
D11, the other end are connected to the grid end and source of the second electrostatic releaser ESD2, the grid end of second electrostatic releaser and
Source connects, and is connected with the drain terminal of the 4th electrostatic releaser, the grid end and source of the 4th electrostatic releaser ESD4
Connection, and it is connected to the second operating voltage VDD；The resistance value of the 7th resistance R7 and the 9th resistance R9 is equal, described
8th resistance R8 resistance value can be according to the drive of the rise and fall time index and the selecting module 300 of ITO output signals
Kinetic force determines.
The protection circuit 301 utilizes the driving voltage and the 8th node D8, the 11st node of the ITO electrode
Pressure difference between D11 is smaller, divides two-stage Electro-static Driven Comb (ESD, Electro-Static discharge) structure by electrostatic leakage
Electric current is discharged into the second operating voltage VDD.
Embodiment two
In the present embodiment, the feedback control module 201 includes：First circuit 2011, second circuit 2012 and
Three-circuit 2013.First circuit 2011, second circuit 2012, tertiary circuit 2013 with the structure phase in embodiment one
Together, will not be repeated here.
As shown in figure 8, the corresponding module of power stage module 202 but being not limited to：First charge pump 401, second
Charge pump 402, the 6th electric capacity C6 and the 7th electric capacity C7；The clock of the charge pump 402 of first charge pump 401 and second is same
Step；The first input end EN of first charge pump 401 is connected with the output end of the second circuit 2012, the second input with
The first operating voltage VDD3 connections, output end are connected with the 3rd operating voltage VP, and by one the 6th electric capacity C6 with
Ground connects；The first input end EN of second charge pump 402 is connected with the output end of the tertiary circuit 2013, the second input
End is connected to ground, and output end is connected with the 4th operating voltage VN, and is connected to ground by one the 7th electric capacity C7.
First charge pump 401 is positive pump, and second charge pump 402 is negative pump.Utilize the second circuit 2012
Output end control the Enable Pin of first charge pump 401, using the output end of the tertiary circuit 2013 to control
State the Enable Pin of the second charge pump 402.When the absolute value of voltage of the 3rd operating voltage VP reduces, first electricity is opened
Lotus pump, the 6th electric capacity C6 is charged, to improve the absolute value of voltage of the 3rd operating voltage VP, make the described 3rd
Operating voltage VP absolute value of voltage returns to setting value, still using the first operating voltage VDD3 as 3.3V, described second
Operating voltage VDD is 1.5V, and the 3rd operating voltage VP is 5.3V, exemplified by the 4th operating voltage VN is -2V, in this reality
The setting value for applying the 3rd operating voltage VP absolute value of voltage described in example is 5.3V.When the voltage of the 4th operating voltage VN
When absolute value reduces, second charge pump is opened, the 7th electric capacity C7 is charged, to improve the 4th work electricity
VN absolute value of voltage is pressed, the absolute value of voltage of the 4th operating voltage VN is returned to setting value, in the present embodiment, institute
The setting value for stating the 4th operating voltage VN absolute value of voltage is 2V.
In other embodiments of the invention, other charge pump circuits can also be used to produce the 3rd work electricity
VP and the 4th operating voltage VN is pressed, will not be repeated here.
Other parts are identical with the structure in embodiment one, will not be repeated here.
To sum up, shown in LCOS provided in an embodiment of the present invention in structure in the drive circuit of ITO electrode, the drive circuit
It is integrated in the LCOS to show in structure, power supply generation module is used to show that the operating voltage of structure generates drive according to the LCOS
Dynamic ITO electrode required voltage, selecting module are used for required for the driving ITO electrode according to caused by the power supply generation module
Voltage generates the driving voltage of the ITO electrode.So that the drive circuit and LCOS of the ITO electrode show structure using identical
Power supply, so as to reduce the supply voltage of drive circuit to adapt to advanced technique, reduce chip size, save power consumption, may be used also
To ensure voltage signal Complete Synchronization between the ITO electrode and LCOS display structures, to ensure that the ITO electrode and LCOS show
Show that the voltage between structure is constantly in the state of DC balances so that the LCOS shows the service life of liquid crystal material in structure
It is guaranteed.Further, the LCOS shows that the drive circuit of ITO electrode in structure is integrated in LCOS and shown in structure, reduces
Cabling on PCB, reduces cost, reduces the interference of ambient noise, improve jamproof ability.
The preferred embodiments of the present invention are above are only, any restrictions effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (10)
1. a kind of LCOS shows the drive circuit of ITO electrode in structure, it is characterised in that it is integrated in LCOS and shows in structure, institute
State LCOS and show that the operating voltage of structure includes the first operating voltage and the second operating voltage, the voltage of first operating voltage
Value is more than the magnitude of voltage of second operating voltage, and the LCOS shows that the drive circuit of ITO electrode in structure includes：Power supply produces
Raw module and selecting module；
The power supply generation module is used for the electricity that the operating voltage generation driving ITO electrode needs of structure are shown according to the LCOS
Pressure, the driving ITO electrode required voltage include the 3rd operating voltage and the 4th operating voltage, the 3rd operating voltage
Magnitude of voltage is more than the magnitude of voltage of the 4th operating voltage, and the power supply generation module includes power stage module and feedback control
Module, the power stage module are used to generate the voltage required for the driving ITO electrode, and the feedback control module is used to control
The controlling switch of the power stage module is made to stablize the voltage required for the driving ITO electrode of the power stage module generation,
The feedback control module includes the first circuit, second circuit, tertiary circuit, logic controller and the 3rd comparator, described
The output end of second circuit and tertiary circuit is connected with the first input end of the logic controller and the second input respectively, institute
The output end for stating logic controller is connected with the input of the power stage module, and the normal phase input end of the 3rd comparator connects
The power stage module is connected to, inverting input is connected to threshold voltage, and output end is connected to the 3rd of the logic controller
Input, the first circuit, second circuit and the tertiary circuit are all connected with a reference voltage；
Described in the voltage that the selecting module is used for required for ITO electrode is driven according to caused by the power supply generation module generates
The driving voltage of ITO electrode.
2. LCOS as claimed in claim 1 shows the drive circuit of ITO electrode in structure, it is characterised in that the power stage
Module includes：Drive circuit module and power generation module；
The output end of the drive circuit module is connected with the input of the power generation module, the power generation module
Output end exports the 3rd operating voltage and the 4th operating voltage.
3. LCOS as claimed in claim 2 shows the drive circuit of ITO electrode in structure, it is characterised in that the power production
Raw module includes：
The first MOS transistor and the 5th MOS transistor of series connection, the grid end of first MOS transistor are connected to the driving
First output end of circuit module, source are connected to first operating voltage, and the grid end of the 5th MOS is connected to ground, leakage
End is connected to fourth node；
The 7th MOS transistor and the 3rd MOS transistor of series connection, the grid end of the 7th MOS transistor are connected to described second
Operating voltage, drain terminal are connected to the fourth node, and the grid end of the 3rd MOS transistor is connected to the drive circuit module
The second output end, source is connected to the 5th node；
The 4th MOS transistor and the 8th MOS transistor of series connection, the grid end of the 4th MOS transistor are connected to the driving
3rd output end of circuit module, source are connected to the 6th node, and the grid end of the 8th MOS transistor is connected to described second
Operating voltage, drain terminal are connected to the 7th node；
The 6th MOS transistor and the second MOS transistor of series connection, the grid end of the 6th MOS transistor are connected to described first
Operating voltage, drain terminal are connected to the 7th node, and the grid end of second MOS transistor is connected to the drive circuit module
The 4th output end, source is connected to ground；
Inductance, its both ends are connected to the fourth node and the 7th node；
4th electric capacity, its both ends are connected to the 5th node and ground, and the voltage of the 5th node is the 4th work
Make voltage；
5th electric capacity, its both ends are connected to the 6th node and ground, and the voltage of the 6th node is the 3rd work
Make voltage.
4. LCOS as claimed in claim 1 shows the drive circuit of ITO electrode in structure, it is characterised in that the feedback control
Molding block includes：First circuit, second circuit and tertiary circuit, the first circuit, second circuit and the tertiary circuit connect
Connect a reference voltage.
5. LCOS as claimed in claim 4 shows the drive circuit of ITO electrode in structure, it is characterised in that the power stage
Module includes：First charge pump, the second charge pump, the 6th electric capacity and the 7th electric capacity；
The clock of first charge pump and the second charge pump is synchronous；
The first input end of first charge pump is connected with the output end of the second circuit, the second input and described first
Operating voltage is connected, and output end is connected with the 3rd operating voltage, and is connected to ground by one the 6th electric capacity；
The first input end of second charge pump is connected with the output end of the tertiary circuit, and the second input is connected to ground,
Output end is connected with the 4th operating voltage, and is connected to ground by one the 7th electric capacity.
6. the LCOS as described in any one in claim 2-5 shows the drive circuit of ITO electrode in structure, its feature exists
In first circuit includes：First resistor, second resistance and the first electric capacity, one end of the first resistor are connected to described
One end of first operating voltage, the other end and the second resistance is series at first node, and the other end of the second resistance connects
Ground is connected to, the first node is connected to the reference voltage, and first electric capacity is parallel to the first segment with second resistance
Between point and ground.
7. LCOS as claimed in claim 6 shows the drive circuit of ITO electrode in structure, it is characterised in that second electricity
Road includes：First comparator, 3rd resistor, the 4th resistance and the second electric capacity；The normal phase input end connection of the first comparator
In section point, one end of the 3rd resistor and one end of the 4th resistance are series at the section point, the 3rd resistor
The other end be connected to the 3rd operating voltage, the other end of the 4th resistance is connected to ground, second electric capacity and institute
3rd resistor is stated to be parallel between the section point and ground；Inverting input is connected to the reference voltage；Output end connects
In the input of logic controller.
8. LCOS as claimed in claim 7 shows the drive circuit of ITO electrode in structure, it is characterised in that the 3rd electricity
Road includes：Second comparator, the 5th resistance, the 6th resistance and the 3rd electric capacity；The normal phase input end connection of second comparator
In the reference voltage；Inverting input is connected to the 3rd node, and one end of the 5th resistance is gone here and there with one end of the 6th resistance
Be coupled to the 3rd node, the other end of the 5th resistance is connected to first operating voltage, the 6th resistance it is another
One end is connected to the 4th operating voltage, the 3rd electric capacity and the 6th resistor coupled in parallel in first operating voltage and
Between 4th operating voltage；Output end is connected to the logic controller；
The resistance of the first resistor and second resistance is equal, and the resistance of the 3rd resistor and the 6th resistance is equal, and described
The resistance of four resistance and the 5th resistance is equal, and the magnitude of voltage of first operating voltage is the magnitude of voltage two of the reference voltage
Times.
9. LCOS as claimed in claim 1 shows the drive circuit of ITO electrode in structure, it is characterised in that the selection mould
Block includes：First level conversion and drive module, second electrical level conversion and drive module, the 9th MOS transistor, the tenth MOS are brilliant
Body pipe, the 11st MOS transistor, the 12nd MOS transistor and protection circuit；
The source of 9th MOS transistor is connected with the 3rd operating voltage, drain terminal and the 12nd MOS transistor
Source is series at the 8th node, and grid end is connected to the output end of first level conversion and drive module；
The drain terminal of 12nd MOS transistor and the drain terminal of the 11st MOS transistor are series at the 9th node, and described the
The grid end of 11 MOS transistors and the grid of the 12nd MOS transistor are connected to protelum point, and the protelum point is connected to institute
State the second operating voltage；
The source of 11st MOS transistor and the drain terminal of the tenth MOS transistor are series at the 11st node, and described the
The grid end of ten MOS transistors is connected to the output end of the second electrical level conversion and drive module, and drain terminal is connected to the described 4th
Operating voltage；
The input of first level conversion and drive module is connected to the clock signal that the LCOS shows structure, two ginsengs
Examine end and be connected to the 3rd operating voltage and the second operating voltage；
The input of the second electrical level conversion and drive module is connected to the clock signal that the LCOS shows structure, two ginsengs
Examine end and be connected to second operating voltage and the 4th operating voltage；
8th node, the 9th node and the 11st node are connected with the protection circuit respectively.
10. LCOS as claimed in claim 9 shows the drive circuit of ITO electrode in structure, it is characterised in that the protection electricity
Road includes：7th resistance, the 8th resistance, the 9th resistance, the first electrostatic releaser, the second electrostatic releaser, the 3rd Electro-static Driven Comb
Device and the 4th electrostatic releaser；
One end of 7th resistance is connected to the 8th node, and the other end is connected to the grid of first electrostatic releaser
End, the grid end of first electrostatic releaser connects with source, and is connected with the drain terminal of the 3rd electrostatic releaser, and described the
The source of three electrostatic releasers connects with grid end, and is connected with second operating voltage；
One end of 8th resistance is connected to the 9th node, and the other end is connected to the 12nd node, first electrostatic
The drain terminal of the drain terminal of release and second electrostatic releaser is connected to the 12nd node, the electricity of the 12nd node
Pressure is the driving voltage of the ITO electrode；
One end of 9th resistance is connected to the 11st node, and the other end is connected to the grid of second electrostatic releaser
End and source, the grid end of second electrostatic releaser connect with source, and are connected with the drain terminal of the 4th electrostatic releaser,
The grid end of 4th electrostatic releaser connects with source, and is connected to second operating voltage；
The resistance value of 7th resistance and the 9th resistance is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610067077.XA CN105529007B (en) | 2016-01-29 | 2016-01-29 | LCOS shows the drive circuit of ITO electrode in structure |
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|---|---|---|---|
| CN201610067077.XA CN105529007B (en) | 2016-01-29 | 2016-01-29 | LCOS shows the drive circuit of ITO electrode in structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1770248A (en) * | 2004-11-03 | 2006-05-10 | 上海华园微电子技术有限公司 | Display drive circuit for liquid crystal on silicon based on large-scale integrated circuit |
| CN101202019A (en) * | 2006-12-13 | 2008-06-18 | 中华映管股份有限公司 | Image data display method and circuit arrangement structure thereof |
| CN102662552A (en) * | 2012-04-11 | 2012-09-12 | 鸿富锦精密工业（深圳）有限公司 | Resistance-type touch panel and electronic device provided with resistance-type touch panel |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002351417A (en) * | 2001-05-24 | 2002-12-06 | Internatl Business Mach Corp <Ibm> | Driving power supply circuit which generates driving power supply voltage of driver circuit used in display device and reference voltage used in the driver circuit to generate gradation voltage, driver circuit voltage generating method to generate the driving power supply voltage and the reference voltage and display device having the driving power supply circuit |
-
2016
- 2016-01-29 CN CN201610067077.XA patent/CN105529007B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1770248A (en) * | 2004-11-03 | 2006-05-10 | 上海华园微电子技术有限公司 | Display drive circuit for liquid crystal on silicon based on large-scale integrated circuit |
| CN101202019A (en) * | 2006-12-13 | 2008-06-18 | 中华映管股份有限公司 | Image data display method and circuit arrangement structure thereof |
| CN102662552A (en) * | 2012-04-11 | 2012-09-12 | 鸿富锦精密工业（深圳）有限公司 | Resistance-type touch panel and electronic device provided with resistance-type touch panel |
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