CN105514231A - Low stress state composite substrate for GaN growth - Google Patents
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Abstract
The invention discloses a low stress state composite substrate for GaN growth. The substrate comprises a thermally and electrically conductive substrate, a thermally and electrically conductive bonding dielectric layer of high melting point, a GaN monocrystal epitaxial layer and a stress compensation layer, wherein the melting point of the thermally and electrically conductive substrate is higher than 1000 DEG C, the thermally and electrically conductive bonding dielectric layer is placed on the substrate, and the stress compensation layer is prepared at the back side of the thermally and electrically conductive substrate. A GaN epitaxial wafer is bonded to the thermally and electrically conductive substrate by the high-temperature diffusion bonding technology. According to the composite substrate of the invention, homoepitaxy can be realized and a vertical structural device can be directly prepared as a traditional composite substrate, the low stress state and high-temperature stability can be also realized, and the quality of subsequent GaN epitaxial growth and chip preparation can be effectively improved.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, particularly a kind of for the low-stress state of GaN growth and the compound substrate of high-temperature stable.
Background technology
Broad stopband GaN base semi-conducting material has excellent photoelectric characteristic, be widely used in making light-emitting diode, laser, ultraviolet detector and high temperature, high frequency, high power electronic device, and high-end microelectronic component needed for preparation Aero-Space can be applied to, as high mobility transistor (HEMT) and heterojunction transistor (HFET), become the study hotspot of international optoelectronic areas.
Because the preparation of GaN body monocrystalline is very difficult, large size single crystal GaN is difficult to direct acquisition, and expensive, and the epitaxial growth of GaN material system is mainly based on the heterogeneous epitaxial technology of large mismatch.At present, what industry was commonly used is in the Sapphire Substrate of the better relative low price of stability, adopt two-step growth method extension GaN material, this heterogeneous epitaxial technology based on resilient coating achieves huge success, wherein blue light, green light LED realizes commercialization, but process for sapphire-based GaN compound substrate has shown larger limitation, problem is mainly reflected in: (1) sapphire is insulating material, related device is caused to realize vertical stratification, homonymy step electrode structure can only be adopted, electric current is that side direction is injected, cause the current unevenness flowing through active layer even, electric current is caused to cluster round effect, reduce stock utilization, add photoetching and etching technics in device preparation simultaneously, remarkable increase cost, (2) sapphire heat conductivility is bad, and 1000 DEG C time, thermal conductivity is about 0.25W/cmK, and heat dissipation problem is given prominence to, and have impact on the electricity of GaN base device, optical characteristics and long-range functional reliability, and limits its application on high temperature and high power device, (3) sapphire hardness is higher, and there is the angle of 30 ° between sapphire lattice and GaN lattice, so not easily cleavage, does not obtain the face, chamber of GaN base device by the method for cleavage.
Silicon substrate has heat-conductivity conducting excellent performance, cost is lower, be easy to realize large scale and the advantage such as integrated, become one of important subject of GaN base LED field in recent years, but lattice mismatch between silicon and GaN and thermal mismatching serious, the technology of growing GaN epitaxial loayer also prematurity on current silicon substrate, compound substrate Dislocations density is higher, even occurs be full of cracks and crackle.Carborundum is the desirable substrate of extension GaN, the lattice mismatch between it and GaN and thermal mismatching less, and possess good heat-conductivity conducting performance, greatly can simplify manufacture craft, but silicon carbide substrates is expensive, and there is the problems such as adhesiveness between epitaxial loayer and substrate, suitability for industrialized production should not be carried out.
Along with going deep into of research, people more and more recognize that homoepitaxy is the optimal selection obtaining high-performance GaN substrate.In view of the high price of GaN single crystalline substrate, some research institution starts to pay close attention to the technology that medium bonding and laser lift-off combine, and is transferred to by GaN epitaxy single crystalline layer on the substrate of high heat conductance high conductivity, to eliminate the adverse effect of Sapphire Substrate.Existing patent (number of patent application is: 201210068033.0 and number of patent application be: 201210068026.0) be described based on low-temperature bonding and the laser lift-off technique compound substrate and preparation method thereof for the preparation of GaN growth, but use medium bonding and laser lift-off to prepare heat-conductivity conducting GaN compound substrate at present, there are the following problems: (1) mainly adopted less than 600 DEG C lower temperature bondings in the past, high-temperature stability is poor, under follow-up more than 1000 DEG C high temperature, during epitaxial growth GaN, shaping bonding structure can change again again, have a strong impact on quality prepared by later stage homoepitaxy and chip, (2) produce larger stress in the change of substrate transfer process and heat-conductivity conducting substrate substrate after the transfer, cause compound substrate that certain warpage occurs, even on GaN epitaxy film, form wrinkle, be difficult to realize high-performance GaN single crystal epitaxial and chip preparation.Poor high-temperature stability and serious stress remnants are main causes of restriction substrate transfer technology application further in high-performance GaN compound substrate.
Summary of the invention
The object of the present invention is to provide a kind of low-stress state compound substrate for GaN growth, High temperature diffusion bonding and substrate desquamation technique is adopted to transfer to heat-conductivity conducting substrate by GaN epitaxy film from Sapphire Substrate, and prepare stress compensation layer at the heat-conductivity conducting translate substrate back side, to offset the most of stress in transfer process in substrate, the compound substrate obtained is applicable to homoepitaxy and prepares vertical structure LED device, possess low-stress state and high-temperature stability simultaneously, effectively can improve quality prepared by follow-up GaN epitaxy and chip, there is larger development prospect.
A kind of low-stress state compound substrate for GaN growth of the present invention, the high-melting-point heat-conductivity conducting bonding medium layer comprising a heat-conductivity conducting substrate and be positioned on this substrate and GaN epitaxial single crystal layer, and prepared the stress compensation layer for offsetting stress at heat-conductivity conducting substrate back.
As shown in Figure 1, a kind of low-stress state compound substrate for GaN growth that the present invention proposes, comprises (being arranged in order from top to bottom) stress compensation layer, heat-conductivity conducting substrate, the heat-conductivity conducting bonding medium layer be located thereon and GaN epitaxial single crystal layer.
The thickness of above-mentioned heat-conductivity conducting bonding medium layer is 10 nanometers to 100 micron, is preferably 500 nanometers to 20 micron; The thickness of heat-conductivity conducting substrate is 10 microns to 3000 microns, is preferably 50 microns to 1000 microns; The thickness of stress compensation layer is 0.1 micron to 300 microns, is preferably 10 microns to 100 microns.
Above-mentioned bonding medium layer, heat-conductivity conducting substrate and stress compensation layer all need to have following feature: 1) high temperature resistant, fusing point more than 1000 DEG C, and without violent diffusion phenomena; (2) heat-conductivity conducting performance is possessed.
The effect of stress that the effect of stress that above-mentioned stress compensation layer produces at heat-conductivity conducting substrate back must produce with the GaN epitaxial layer that transfer is come is contrary, and this stress compensation layer material, can select GaN, SiN
xdeng nitride material, or molybdenum (Mo), titanium (Ti), palladium (Pd), gold (Au), copper (Cu), tungsten (W), nickel (Ni), a kind of elemental metals in chromium (Cr) or several alloys.
By above requirement, this heat-conductivity conducting bonding medium layer material, molybdenum (Mo) can be selected, titanium (Ti), palladium (Pd), gold (Au), copper (Cu), tungsten (W), nickel (Ni), a kind of elemental metals in chromium (Cr) or several alloys, or resin matrix and conducting particles silver (Ag), gold (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni), one or more conducting polymers formed in graphite (C), or one or more conducting particless above particulate and adhesive, solvent, the electrocondution slurry that auxiliary agent forms, or silicate-base high-temperature electric conduction glue (HSQ), or nickel (Ni), chromium (Cr), silicon (Si), the high temperature alloy slurry that the metals such as boron (B) are formed.
By above requirement, this heat-conductivity conducting translate substrate material, a kind of elemental metals in molybdenum (Mo), titanium (Ti), palladium (Pd), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) or several alloys can be selected, or silicon (Si) crystal, carborundum (SiC) crystal or AlSi crystal.
Above-mentioned stress compensation layer and heat-conductivity conducting bonding medium layer can be all single or multiple lift structures.
In above-mentioned substrate transfer process use the thickness of GaN epitaxial layer to be 1 micron to 100 microns, be preferably 3 microns to 50 microns, and GaN exists with the form of monocrystalline.
Above-mentioned stress compensation layer, can choice for use magnetron sputtering, molecular beam epitaxy, plasma enhanced chemical vapor deposition, metal organic chemical vapor deposition or vacuum thermal evaporation technology, is prepared in the back side of heat-conductivity conducting substrate.
Above-mentioned heat-conductivity conducting bonding medium layer, then utilize magnetron sputtering or vacuum thermal evaporation or wet processing, be prepared in the surface of GaN epitaxy film and heat-conductivity conducting substrate.
Between above-mentioned heat-conductivity conducting substrate and GaN epitaxial single crystal layer, by heat-conductivity conducting bonding medium layer, High temperature diffusion bonding method is used to connect.In temperature >=900 DEG C, under the condition of pressure 100 kgf/square inch to 4 ton/square inch, by the abundant diffusion of heat-conductivity conducting bonding medium layer, the front of GaN epitaxy film and heat-conductivity conducting substrate is bonded together, as shown in Figure 2.
A kind of low-stress state compound substrate for GaN growth of the present invention, comprising the less stress state compound substrate saving stress compensation Rotating fields, such as, balance performance and cost and save stress compensation Rotating fields, High temperature diffusion bonding techniques is only used to realize being used for the high temperatures of GaN growth and comparatively low residual stress compound substrate (as shown in Figure 3), also when the scope belonging to this patent and comprise.
Compound substrate of the present invention, had both possessed the advantage that can be used for GaN homoepitaxy He prepare light emitting diode (LED) chip with vertical structure, combined again the high-temperature stable of High temperature diffusion bonding and stress compensation technology, the feature of low-stress state, therefore possessed the advantage of many uniquenesses:
(1) compound substrate of the present invention, has one deck GaN, can realize the homoepitaxy of GaN, improves epitaxial growth quality, and its heat-conductivity conducting better performances, can be directly used in and prepare vertical structure LED device.Thus efficiently solve process for sapphire-based GaN substrate heat-conductivity conducting poor-performing, cannot prepare vertical structure LED, stock utilization is low, and heteroepitaxy is second-rate, and the complex process of Si substrate and SiC substrate Epitaxial growth, the problem such as with high costs.
(2) use High temperature diffusion bonding techniques to realize GaN epitaxy film to be connected with heat-conductivity conducting substrate, in its heating and cooling process, the diffusion and phase transformation etc. of bonding medium layer and translate substrate completes entirely, under the hot conditions of subsequent epitaxial, bonding medium layer and translate substrate can not change again (as, phase transformation, chemical reaction, physical diffusion, to peel off), namely the compound substrate that diffusion interlinked technology obtains has very excellent high-temperature stability, thus significantly can improve the quality of GaN homoepitaxy.
(3) High temperature diffusion bonding techniques is used, have greatly expanded the range of choice of alternative bonding medium layer material, the refractory metal that some chemisms are less, adhesiveness is poor or high-temperature alloy material can be used as dielectric layer, the stable connection of high strength just can be obtained at very little bonding pressure, therefore, be applicable to realize the transfer of GaN to fragility substrates such as Si very much.
(4) required during High temperature diffusion bonding pressure is very little, and the longitudinal stress therefore applied significantly reduces, and can be played the effect of stress relieving by annealing, so can effectively reduce the residual stress in substrate by the temperature-fall period after regulation and control bonding.
(5) introducing of stress compensation layer then can offset the most of stress in the GaN epitaxy film transferred on heat-conductivity conducting substrate, compound substrate is made to be in lower stress state, suppress the formation of substrate warpage and epitaxial film wrinkle, crackle, obtain high performance GaN compound substrate, the improvement of subsequent epitaxial quality is highly profitable.
(6) in conjunction with High temperature diffusion bonding and stress compensation technology, finally obtain high-temperature stable and be in the GaN compound substrate of low-stress state, can be good at the homoepitaxy and the chip preparing process that adapt to follow-up at high temperature GaN.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the low-stress state compound substrate for GaN growth.
Fig. 2 is preparation method's schematic diagram of a kind of low-stress state compound substrate for GaN growth of the present invention.
Fig. 3 be a kind of containing stress compensation layer for GaN growth and the structural representation of the less compound substrate of residual stress.
Fig. 4 is that embodiment 1. is made heat-conductivity conducting substrate using CuMo, used Ni and conduction Agpaste to obtain the preparation flow figure of the low-stress state compound substrate for GaN growth as stress compensation layer and bonding medium layer.Wherein, (a) is the schematic diagram at CuMo heat-conductivity conducting deposited on substrates stress compensation layer; B () uses spin coating proceeding preparation conduction Agpaste as the schematic diagram of bonding medium layer; C () is the schematic diagram using High temperature diffusion bonding method bonding GaN epitaxial layer and heat-conductivity conducting substrate; D () is the schematic diagram using laser lift-off technique to remove Sapphire Substrate; (e) be final obtain make heat-conductivity conducting substrate using CuMo, use Ni and conduction Agpaste as the composite substrate structure schematic diagram of stress compensation layer and bonding medium layer.
Fig. 5 is that embodiment 2. is made heat-conductivity conducting substrate using Si, used Au/Pd and Ti/Pd to obtain the preparation flow figure of the low-stress state compound substrate for GaN growth as stress compensation layer and bonding medium layer.Wherein, (a) uses UV anaerobic adhesive GaN epitaxial layer to be transferred to the schematic diagram of sapphire temporary substrates; B () is the schematic diagram making heat-conductivity conducting deposited on substrates Au/Pd double-decker stress compensation layer at Si; C () uses magnetron sputtering to prepare the schematic diagram of Ti/Pd as bonding medium layer; D (), after using High temperature diffusion bonding method that GaN epitaxial layer and heat-conductivity conducting substrate are carried out bonding, peels sapphire schematic diagram off; (e) be final obtain make heat-conductivity conducting substrate using Si substrate, use Au/Pd and Ti/Pd as the composite substrate structure schematic diagram of stress compensation layer and bonding medium layer.
Fig. 6 is that embodiment 3. is made heat-conductivity conducting substrate with AlSi, used SiN
xthe preparation flow figure of the low-stress state compound substrate for GaN growth is obtained respectively as stress compensation layer and bonding medium layer with Au.
To be embodiment 4. make heat-conductivity conducting substrate using CuW to Fig. 7, use GaN and Pd as stress compensation layer and bonding medium layer, the preparation flow figure obtaining the low-stress state compound substrate for GaN growth using ZnO as sacrificial release layers.
Fig. 8 is the preparation section that example 5. saves stress compensation layer, makes heat-conductivity conducting substrate with W, and high temperature alloy slurry obtains high-temperature stable for GaN growth and the preparation flow figure of the less compound substrate of residual stress as diffusion interlinked dielectric layer.Wherein, (a) uses spin coating proceeding to prepare the schematic diagram of high temperature alloy slurry as bonding medium layer; B () is the schematic diagram using High temperature diffusion bonding method bonding GaN epitaxial layer and heat-conductivity conducting substrate; C () is the schematic diagram using laser lift-off technique to remove Sapphire Substrate; D () is the final composite substrate structure schematic diagram not containing the W substrate high temperature alloy slurry bonding of stress compensation layer obtained.
Embodiment
Below with reference to accompanying drawing of the present invention, describe a kind of low-stress state compound substrate for GaN growth in detail.First should illustrate, those skilled in the art, according to basic thought of the present invention, can make various amendment or improvement, only otherwise depart from basic thought of the present invention, all within the scope of the present invention.
Embodiment 1: with Ni as stress compensation layer, conduction Agpaste bonding CuMo metal substrate and GaN epitaxial layer, obtain the low-stress state compound substrate for GaN growth, concrete preparation method is as follows:
(1) epitaxial growth GaN single crystalline layer on a sapphire substrate: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use the GaN single crystalline layer of MOCVD technology epitaxial growth 4 micron thickness, then growth adds thick gan layer thickness to 15 micron in HVPE.
(2) magnetron sputtering deposition thickness is used to be the Ni thin layer of 500 nanometers at the back side of CuMo metal substrate, as stress compensation layer, as shown in Fig. 4 (a).
(3) in the above-mentioned GaN face of process for sapphire-based GaN compound substrate and the CuMo substrate face of 300 micron thickness, the conduction Agpaste of rotary coating layer 10 microns respectively, as bonding medium layer, as shown in Fig. 4 (b), then temperature 1100 DEG C, pressure is under 1.5T, carries out the High temperature diffusion bonding of 30 minutes, realize the bonding of GaN epitaxial layer and CuMo metal substrate, as shown in Fig. 4 (c).
(4) laser lift-off technique is adopted, remove Sapphire Substrate, the surface clean such as hydrochloric acid, acetone technique is carried out to obtained metal composite substrate, then obtain conduction Agpaste bonding, device architecture is the compound substrate of GaN/AgPaste/CuMo/Ni, as shown in Fig. 4 (d) He 4 (e).
(5) this compound substrate comprises the CuMo substrate of one deck 300 micron thickness, wherein the mass percent of Mo and Cu is respectively 20% to 80%, the conduction Agpaste bonding medium layer adjustable by a thickness and the GaN epitaxial single crystal layer of 15 micron thickness are bonded together, and use Ni to offset the most of residual stress in substrate as stress compensation layer, the final compound substrate obtained has good high-temperature stability and low-stress state, is applicable to GaN isoepitaxial growth.
Embodiment 2: by the GaN epitaxial layer of Au/Pd as stress compensation layer, Ti/Pd bonding Si substrate and gluing transfer, obtain the gallium polar surface low-stress state compound substrate for GaN growth outwardly, concrete preparation method is as follows:
(1) the process for sapphire-based GaN compound substrate of gluing transfer is prepared: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use the GaN single crystalline layer of MOCVD technology epitaxial growth 4 micron thickness, then in HVPE, growth adds thick gan layer thickness to 15 micron, then UV anaerobic adhesive is used to be bonded to by this GaN epitaxy film on 2 inch of 430 micron thickness sapphire temporary substrates, new Sapphire Substrate is as transfer support substrates, laser lift-off technique is used former extension Sapphire Substrate to be removed afterwards, namely the GaN single crystalline layer be bonded in new Sapphire Substrate is obtained, as Fig. 5 a) shown in.
(2) at the back side of Si substrate, magnetron sputtering is used to prepare the Au layer of 3 microns and the Pd layer of 10 microns, as stress compensation layer.
(3) in the bonding GaN face of GaN monocrystalline on a sapphire substrate and the Si substrate face of 300 micron thickness, magnetron sputtering is used to prepare the Ti layer of 50 nanometers and the Pd layer of 500 nanometers respectively, as heat-conductivity conducting bonding medium layer, then temperature 1000 DEG C, pressure is under 2.5T, carry out the High temperature diffusion bonding of 20 minutes, realize the bonding of GaN epitaxial layer and Si substrate.
(4) in bonding process, the at high temperature carbonization of UV anaerobic adhesive, Sapphire Substrate is from GaN epitaxy film surface Automatic-falling, the surface clean such as hydrochloric acid, acetone technique is carried out to obtained compound substrate, then obtain Ti/Pd bonding, device architecture is the compound substrate of GaN/Ti/Pd/Pd/Ti/Si/Au/Pd, as shown in Figure 5.
(5) this compound substrate comprises the Si substrate of one deck 300 micron thickness, the Ti/Pd bonding medium layer adjustable by a thickness and the GaN epitaxial single crystal layer of 15 micron thickness are bonded together, and use Au/Pd to offset the most of residual stress in substrate as stress compensation layer, the compound substrate obtained has good high-temperature stability and low-stress state, is applicable to GaN isoepitaxial growth.In addition, because GaN epitaxial layer have passed through gluing and Ti/Pd metal medium twice upset, what finally obtain is gallium polar surface GaN compound substrate outwardly, advantageously in raising GaN epitaxy quality.
Embodiment 3: use SiN
xthe low-stress state compound substrate for GaN growth is obtained, concrete technology step following (as shown in Figure 6) as stress compensation layer, AuAu bonding AlSi metal substrate and GaN epitaxial layer:
(1) epitaxial growth GaN single crystalline layer on a sapphire substrate: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use the GaN single crystalline layer of MOCVD technology epitaxial growth 4 micron thickness, then growth adds thick gan layer thickness to 15 micron in HVPE.
(2) plasma enhanced chemical vapor deposition is used to prepare the SiN that thickness is 5 microns at the back side of AlSi metal substrate
xthin layer, as stress compensation layer.
(3) in the GaN face of above-mentioned process for sapphire-based GaN compound substrate, use magnetron sputtering to prepare the Au conductive bond dielectric layer of 1 micron thickness, then temperature 950 DEG C, pressure is under 2T, carry out the High temperature diffusion bonding of 20 minutes, realize the bonding of GaN epitaxial layer and AlSi metal substrate.
(4) adopt laser lift-off technique, remove Sapphire Substrate, the surface clean such as hydrochloric acid, acetone technique is carried out to obtained metal composite substrate, then obtains AuAu bonding, device architecture is GaN/Au/AlSi/SiN
xcompound substrate.
(5) this compound substrate comprises the AlSi substrate of one deck 150 micron thickness, and wherein the component of Al is the component of 30%, Si is 70%, and the Au bonding medium layer adjustable by a thickness and the GaN epitaxial single crystal layer of 15 micron thickness are bonded together, and use SiN
xoffset the most of residual stress in substrate as stress compensation layer, final obtained compound substrate has good high-temperature stability and low-stress state, is applicable to GaN isoepitaxial growth.
Embodiment 4: with GaN as stress compensation layer, Pd bonding CuW substrate and GaN epitaxial layer, obtain the low-stress state compound substrate for GaN growth, concrete preparation method following (as shown in Figure 7):
(1) making ZnO is as the process for sapphire-based GaN compound substrate of sacrificial release layers: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use magnetron sputtering technique deposition ZnO sacrificial release layers, the GaN single crystalline layer of epitaxial growth 4 micron thickness in MOCVD again, then in HVPE, growth adds thick gan layer thickness to 15 micron.
(2) at the back side of 200 micron thickness CuW substrates, the GaN many days layers of HVPE technology extension 15 microns are used, as stress compensation layer.
(3) in the front of CuW substrate, magnetron sputtering is used to prepare the Pd layer of 1000 nanometers, as heat-conductivity conducting bonding medium layer, then temperature 1200 DEG C, pressure is under 3.5T, carries out the High temperature diffusion bonding of 20 minutes, realizes the bonding of GaN epitaxial layer and CuW substrate.
(4) chemical stripping technology is adopted, namely chemical reagent corrosion ZnO sacrificial release layers is used, thus stripping Sapphire Substrate, the surface clean such as hydrochloric acid, acetone technique is carried out to obtained compound substrate, obtains PdPd bonding, device architecture is the compound substrate of GaN/Pd/CuW/GaN.
(5) this compound substrate comprises the CuW substrate of one deck 200 micron thickness, wherein the mass percent of W and Cu is respectively 20% to 80%, the Pd bonding medium layer adjustable by a thickness and the GaN epitaxial single crystal layer of 15 micron thickness are bonded together, and use GaN to offset the most of residual stress in substrate as stress compensation layer, the final compound substrate obtained has good high-temperature stability and low-stress state, is applicable to GaN isoepitaxial growth.
Embodiment 5: balance performance and cost and save stress compensation Rotating fields, only uses high temperature alloy slurry (NiCrSiB) bonding W metal substrate and GaN epitaxial layer, obtains unstressed layer of compensation and the less compound substrate of residual stress:
(1) Sapphire Substrate Epitaxial growth GaN single crystalline layer: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use the GaN single crystalline layer of MOCVD technology epitaxial growth 4 micron thickness, then in HVPE, growth adds thick gan layer thickness to 15 micron.
(2) at the above-mentioned GaN face of process for sapphire-based GaN compound substrate and the W substrate surface of 150 micron thickness, rotary coating a layer thickness is the NiCrSiB high temperature alloy slurry of 5 microns respectively, as conductive bond dielectric layer, as shown in Fig. 8 (a), then temperature 1200 DEG C, pressure is under 2T, carries out the High temperature diffusion bonding of 20 minutes, realize the bonding of GaN epitaxial layer and W metal substrate, as shown in Fig. 8 (b).
(3) laser lift-off technique is adopted to remove Sapphire Substrate, the surface clean such as hydrochloric acid, acetone technique is carried out to obtained compound substrate, then obtain NiCrSiB high temperature alloy slurry bonding, device architecture is the compound substrate of GaN/NiCrSiB/NiCrSiB/W, as shown in Fig. 8 (c).
(4) this compound substrate comprises the W substrate of one deck 150 micron thickness, wherein degree >=99.95% of W, the NiCrSiB high temperature alloy pulp layer adjustable by a thickness and the GaN epitaxial single crystal layer of 15 micron thickness are bonded together, the compound substrate finally obtained is at high temperature stable and residual stress is less, can be used for GaN isoepitaxial growth, as shown in Fig. 8 (d).
Claims (7)
1. for a low-stress state compound substrate for GaN growth, it is characterized in that, comprise heat-conductivity conducting substrate, the heat-conductivity conducting bonding medium layer be positioned on this substrate, GaN epitaxial single crystal layer and the stress compensation layer prepared at heat-conductivity conducting substrate back.
2. a kind of low-stress state compound substrate for GaN growth according to claim 1, is characterized in that, described stress compensation layer material melting point is higher than 1000 DEG C and have heat-conductivity conducting performance, can be GaN, SiN
xdeng nitride material, or molybdenum (Mo), titanium (Ti), palladium (Pd), gold (Au), copper (Cu), tungsten (W), nickel (Ni), a kind of elemental metals in chromium (Cr) or several alloys.
3. a kind of low-stress state compound substrate for GaN growth according to claim 1, it is characterized in that, described heat-conductivity conducting bonding medium layer material fusing point is higher than 1000 DEG C and have heat-conductivity conducting performance, can be molybdenum (Mo), titanium (Ti), palladium (Pd), gold (Au), copper (Cu), tungsten (W), nickel (Ni), a kind of elemental metals in chromium (Cr) or several alloys, or resin matrix and conducting particles silver (Ag), gold (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni), one or more conducting polymers formed in graphite (C), or one or more conducting particless above particulate and adhesive, solvent, the electrocondution slurry that auxiliary agent forms, or silicate-base high-temperature electric conduction glue (HSQ), or nickel (Ni), chromium (Cr), silicon (Si), the high temperature alloy slurry that the metals such as boron (B) are formed.
4. a kind of low-stress state compound substrate for GaN growth according to claim 1, it is characterized in that, described heat-conductivity conducting backing material fusing point is higher than 1000 DEG C and have heat-conductivity conducting performance, can be a kind of elemental metals in molybdenum (Mo), titanium (Ti), palladium (Pd), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) or several alloys, or silicon (Si) crystal, carborundum (SiC) crystal or AlSi crystal.
5. a kind of low-stress state compound substrate for GaN growth according to claim 1, is characterized in that, the thickness of described GaN epitaxial layer is 1 micron to 100 microns, is preferably 3 microns to 50 microns; The thickness of described stress compensation layer is 0.1 micron to 300 microns, is preferably 10 microns to 100 microns; The thickness of described heat-conductivity conducting bonding medium layer is 10 nanometers to 100 micron, is preferably 500 nanometers to 20 micron; The thickness of described heat-conductivity conducting translate substrate is 10 microns to 3000 microns, is preferably 50 microns to 1000 microns.
6. a kind of low-stress state compound substrate for GaN growth according to claim 1, is characterized in that, described heat-conductivity conducting substrate and GaN single crystalline layer, is by heat-conductivity conducting bonding medium layer, uses High temperature diffusion bonding techniques to be bonded together.
7. a kind of low-stress state compound substrate for GaN growth according to claim 1, is characterized in that, comprising the less stress state compound substrate saving stress compensation Rotating fields.
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| CN115332408A (en) * | 2022-10-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
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