CN105514019B - The preparation method of flush type conductive wires - Google Patents
The preparation method of flush type conductive wires Download PDFInfo
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- CN105514019B CN105514019B CN201410503152.3A CN201410503152A CN105514019B CN 105514019 B CN105514019 B CN 105514019B CN 201410503152 A CN201410503152 A CN 201410503152A CN 105514019 B CN105514019 B CN 105514019B
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Abstract
A kind of preparation method of flush type conductive wires, comprises the following steps：One substrate is provided；The first recess region is formed in the upper surface of substrate；Conductive layer is formed in the upper surface of substrate, conductive layer includes a conductive pattern, conductive pattern is inserted in the first recess region and protrudes from the upper surface of substrate, and the side wall of conductive pattern forms one second recess region, the segment thickness in the second recess region with conductive layer；In forming the first sacrificial pattern on conductive layer, the first sacrificial pattern is inserted in the second recess region and protrudes from the upper surface of conductive pattern, and the side wall of the first sacrificial pattern forms one the 3rd recess region, the 3rd recess region exposure conductive pattern；Conductive layer is subjected to electroplating processes, thickens conductive pattern；Remove the conductive layer in the first sacrificial pattern and the second recess region.
Description
Technical field
Present invention is directed to a kind of preparation method of conductive wires, espespecially a kind of preparation method of thick-film conductor distribution.
Background technology
In recent years with the progress of electronic technology, match somebody with somebody for what carrying semiconductor subassembly, integrated circuit, electronic component etc. were used
Line substrate, in addition to (Miniaturization) is minimized, also rapidly it is in progress towards high product body, high output and high speed.Especially
It, the manufacturing process of above-mentioned wiring substrate is also developed towards metal wiring granular.Copper etc. is formed on substrate for example, working as
When metal wiring, forming sputtering film can be typically used with being electrolysed the processing procedures such as plating.
When making thick film metal distribution on substrate with known techniques, because the thickness of metal wiring can influence to etch energy
Power, often because etching unclean influence production yield, or even can not produce expected copper is thick, wiring closet away from product.
The content of the invention
The embodiment of the present invention is to provide a kind of preparation method of thick-film conductor distribution.
A kind of preparation method for flush type conductive wires that a wherein embodiment of the invention is provided.Comprise the following steps.
First, there is provided a substrate.Then, substrate is subjected to patterned process, to form one first recess region in the upper surface of substrate.
Then, a conductive layer is formed in the upper surface of substrate, wherein, conductive layer includes a conductive pattern, and conductive pattern at least inserts the
In one recess region, conductive pattern protrudes from the upper surface of substrate in a thickness direction, and the side wall of conductive pattern forms one second
Recess region, and there is the segment thickness of conductive layer in the second recess region.Then, figure is sacrificed in formation one first on conductive layer
Case, wherein, the first sacrificial pattern is at least inserted in the second recess region, and the first sacrificial pattern protrudes from conduction in a thickness direction
The upper surface of pattern, the side wall of the first sacrificial pattern forms one the 3rd recess region, and the 3rd recess region exposes a part
Conductive pattern.Then, conductive layer is subjected to electroplating processes, thickens the conductive pattern that the 3rd recess region is exposed.Finally, move
Except the first sacrificial pattern, also, remove the conductive layer in the second recess region.
The preparation method of the flush type conductive wires provided by the embodiment of the present invention, etch capabilities can be not only restricted to and
Produce the thick-film conductor distribution that Distribution density is high, wiring width is narrow.
For the enabled feature and technology contents for being further understood that the present invention, refer to below in connection with the present invention specifically
Bright and accompanying drawing, but accompanying drawing is only provided and used with reference to explanation, is not used for the present invention person of being any limitation as.
Brief description of the drawings
Figure 1A to Fig. 1 J shows the step flow of the preparation method of the flush type conductive wires of one embodiment of the invention.
Fig. 2 is the step flow chart of the preparation method of the flush type conductive wires of another embodiment of the present invention.
Description of reference numerals
1 substrate
The upper surface of 101 substrates
2 first recess regions
3 " initial conductive layers
3rd, 3 ' conductive layer
31st, 31 ' conductive pattern
301st, 301 ' upper surface
4th, 4 ' second recess region
5 first sacrificial patterns
501 upper surfaces
6 the 3rd recess regions
7 second sacrificial patterns
8 etch stop layers
H1, H2 thickness
H3 height
S1~S7 steps
Embodiment
Figure 1A to Fig. 1 J is referred to, Figure 1A to Fig. 1 J is the substrate with flush type conductive wires of one embodiment of the invention
Schematic side view in manufacturing process, also, Figure 1A to Fig. 1 J shows the flush type conductive wires of one embodiment of the invention
The step flow of preparation method.
Figure 1A is refer to, first, there is provided a substrate 1.The species of substrate 1 can select according to actual demand.For example, work as
The preparation method of the conductive wires is applied in semiconductor applications, and substrate 1 can be siliceous semiconductor crystal wafer；Answered other
Use, substrate 1 can be circuit base plate, and the material of substrate 1 can be makrolon (polycarbonate, PC), poly- carbonic acid
Ester and acrylonitrile-butadiene-styrene copolymer (Acrylonitrile Butadiene Styrene, ABS) contain glass
The material of fiber.Substrate 1 can also be glass substrate.
Then, Figure 1B is refer to, substrate 1 is subjected to patterned process, it is recessed to form first in the upper surface 101 of substrate 1
Groove region 2.The embodiment of the step of on substrate 1 is carried out into patterned process, laser ablation substrate 1 can be used, with substrate 1
Upper surface 101 slot.As shown in Figure 1B, the first recess region 2 has a desired depth.
Then, Fig. 1 C are refer to, can first whole face property in order to form conductive layer 3 (Fig. 1 D) in the upper surface 101 of substrate 1
Initial conductive layer 3 " is formed in the upper surface 101 of substrate 1, wherein, initial conductive layer 3 " is to fill up the first recess region 2.Formed
The mode of initial conductive layer 3 ", which can use, for example prints conductive paste, spraying (Spray coating), electroless plating method
(electroless plating) or sputtering method (Sputtering) etc. common conductive material coating process.
Then, initial conductive layer 3 " is subjected to patterned process, initial conductive layer 3 " is formed conductive layer 3 in substrate 1
Upper surface 101.The embodiment of the step of on initial conductive layer 3 " is carried out into patterned process, can enter to initial conductive layer 3 "
The etching process of row first time.Etching process can adopt the mode of Wet-type etching.Specifically, Fig. 1 D are joined, can be prior to initially leading
Sacrificial pattern, such as the second sacrificial pattern 7 shown in Fig. 1 D are formed in electric layer 3 ".Second sacrificial pattern 7, which can be used, does ink, and shape
Into the second sacrificial pattern 7 mode such as including program exposed and developed.Secondly, etched initially by the second sacrificial pattern 7
Conductive layer 3 ", that is to say, that do not covered and expose by the second sacrificial pattern 7 for initial conductive layer 3 " come part carry out
Etch (for example, carrying out stinging Copper treatment), to pattern initial conductive layer 3 ".In the program of above-mentioned etching initial conductive layer 3 ",
The thickness for exposing the only a fraction of initial conductive layer 3 " come is etched.Finally, then the second sacrificial pattern 7 is removed, such as Fig. 1 E
It is shown.
To sum up, conductive layer 3 can be formed at the upper surface 101 of substrate 1.Fig. 1 E are referred to, conductive layer 3 includes conductive pattern
31, conductive pattern 31 is in the first recess region 2 at least insert substrate 1, also, conductive pattern 31 is convex in a thickness direction
For the upper surface 101 of substrate 1.That is, the upper surface 301 of conductive pattern 31 and the upper surface 101 of substrate 1 are between the two in thickness
Degree has a preset distance on direction.In addition, the side wall of conductive pattern 31 forms the second recess region 4, in the second recess region 4
Segment thickness H2 with conductive layer 3.The conductive layer 3 of the upper surface 101 of substrate 1 is formed at, can be via in the second recess region 4
Thickness H2 and turn on comprehensively, with the follow-up electroplating processes of profit.
It is noted that thickness H1 (that is, the upper tables of initial conductive layer 3 " of initial conductive layer 3 " as is shown in fig. 1C
The vertical range of face to the upper surface 101 of substrate 1) can according to the spacing of the first recess region 2, the expection line-spacing of conductive wires and
The expection line width of conductive wires and adjust, in favor of the implementation of above-mentioned etching initial conductive layer 3 ".
In another embodiment not illustrated of the present invention, the step of on initial conductive layer 3 " is carried out into patterned process
Embodiment, the etching process can adopt dry-etching, with laser ablation initial conductive layer 3 ".Specifically, can be according to reality
Border demand, such as the material of foundation initial conductive layer 3 ", the thickness H1 of initial conductive layer 3 " or conductive layer 3 are in the second groove area
Residual thickness H2 in domain 4 etc., the sweep time of laser energy and laser is adjusted, make institute to avoid laser ablation excessive
State the second recess region 4 and expose the upper surface 101 of substrate 1, or avoid laser energy deficiency and make second recess region 4
Not up to expected depth.
It should be noted that as referring to figure 1E, in this specific embodiment, conductive pattern 31 corresponds to the first of substrate 1
Recess region 2, furthermore, the side wall of conductive pattern 31 can be close to the side wall of the first recess region 2.
Then, Fig. 1 F are refer to, in forming the first sacrificial pattern 5 on conductive layer 3, the first sacrificial pattern 5 is at least to insert
In second recess region 4, also, the first sacrificial pattern 5 is to protrude from the upper surface 301 of conductive pattern 31 in a thickness direction.
That is, first the height H3 in a thickness direction of sacrificial pattern 5 be greater than the height of conductive pattern 31 in a thickness direction.First
The height H3 of sacrificial pattern 5 in a thickness direction is also upper surface 501 to the upper surface 101 of substrate 1 of the first sacrificial pattern 5
Vertical range, and the height of conductive pattern 31 in a thickness direction also for conductive pattern 31 upper surface 301 to substrate 1 upper table
The vertical range in face 101.In addition, the side wall of the first sacrificial pattern 5 forms the 3rd recess region 6, the 3rd recess region 6 can expose
Go out at least one of conductive pattern 31.
It is described further below in the embodiment that first sacrificial pattern 5 is formed on conductive layer 3.For example, can be first
In forming to whole face property one layer of first sacrifice layer (not shown) on conductive layer 3, wherein can to fill up second recessed for the first sacrifice layer
Groove region 4.Then, the first sacrifice layer is subjected to patterned process, the first sacrifice layer is formed first sacrificial pattern 5.The
Dry ink can be used in one sacrifice layer, and patterns the mode of the first sacrificial pattern 5 such as including program exposed and developed.
Thus, the first sacrificial pattern 5 may correspond to the second recess region 4 and be formed in the second recess region 4 and be remained
Conductive layer 3 on.As shown in fig. 1F, in the present embodiment, the first sacrificial pattern 5 can fill up the second recess region 4, and first sacrifices
The side wall of pattern 5 and the side wall of conductive pattern 31 can be trimmed partly, and in other words, the 3rd recess region 6 can expose conductive pattern
31 whole.In addition, the first sacrificial pattern 5 and conductive pattern 31 are positive and negative complementation, but invention is not limited thereto.
Then, with reference to figure 1F to Fig. 1 G, conductive layer 3 is subjected to electroplating processes, the conduction for being exposed the 3rd recess region 6
Pattern 31 thickens.In the present embodiment, conductive pattern 31 is to thicken the height H3 to the first sacrificial pattern 5 in a thickness direction.
In other words, the height that the height of the conductive pattern 31 ' through thickening in a thickness direction can be with the first sacrificial pattern 5 in a thickness direction
It is identical to spend H3.
Then, can be in order to remove the first sacrificial pattern 5 and remove the conductive layer 3 ' remained in the second recess region 4 '
One layer of etch stop layer 8 is formed on conductive pattern 31 ', to protect conductive pattern 31 '.The material of etch stop layer 8 for example including
Tin and lead.Then, under the protection of etch stop layer 8, by go it is black in a manner of remove the first sacrificial pattern 5, as shown in fig. 1H.It is described
Black mode is gone, e.g. divests the first sacrificial pattern 5 using the first sacrificial pattern of solvent soaking 5 or using plasma-based body.
Then,, can be in etch stop layer 8 in order to remove the conductive layer 3 ' remained in the first recess region 2 with reference to figure 1I
Protection under, secondary etching process is carried out to conductive layer 3 '.Similar in appearance to the etching process of first time, secondary erosion
Quarter processing can equally adopt wet type and sting the mode of copper or the mode of dry laser ablation.Conductive layer in second recess region 4 '
3 ' only have segment thickness, and the segment thickness of conductive layer 3 ' can for example be less than 5 microns, therefore, whether be lost using wet type
The mode at quarter or the mode of dry-etching, the conductive layer 3 ' in the second recess region 4 ' can all be removed easily.
Finally, as shown in figure iJ, as long as removing etch stop layer 8, you can complete the making of conductive wires, and obtain thick film
Conductive wires, for example, thick copper wiring.In one embodiment of the invention, thickness (that is, the thickness of conductive pattern 31 ' of thick copper wiring
Degree) 50 microns can be more than, and the wiring closet of thick copper wiring is away from the grade that can reach less than 50 microns.As shown in Figure 1A to Fig. 1 H
In embodiment, the wiring closet of thick copper wiring is away from the width for the second recess region 4,4 '.
Above-described embodiment can summarize the preparation method of the flush type conductive wires of another embodiment of the present invention, refer to figure
2 flow chart.First, there is provided a substrate (step S1)；Then, substrate is subjected to patterned process, with the upper surface of substrate
Form one first recess region (step S2)；Then, a conductive layer is formed in the upper surface of substrate, wherein, conductive layer includes one
Conductive pattern, conductive pattern are at least inserted in the first recess region, and conductive pattern protrudes from the upper table of substrate in a thickness direction
Face, the side wall of conductive pattern forms one second recess region, and has the segment thickness (step of conductive layer in the second recess region
S3)；Then, in one first sacrificial pattern of formation on conductive layer, wherein, the first sacrificial pattern at least inserts the second recess region
Interior, the first sacrificial pattern protrudes from the upper surface of conductive pattern in a thickness direction, and the side wall of the first sacrificial pattern forms one the
Three recess regions, and the conductive pattern (step S4) of a 3rd recess region exposure part；Then, conductive layer is carried out at plating
Reason, makes the conductive pattern that the 3rd recess region is exposed thicken (step S5)；Secondly, the first sacrificial pattern (step S6) is removed；
And the conductive layer (step S7) in the second recess region of removal.
In summary, the embodiment of the present invention provides a kind of preparation method of flush type conductive wires, and it utilizes erosion for the first time
Quarter is handled, and to pattern initial conductive layer 3 ", recycles second of etching process, to remove what is remained in the second recess region
Conductive layer thickness.Etching mode of the preparation method of flush type conductive wires through thus two-part carries out the system of conductive wires
Make, etch capabilities can be not only restricted to, and then avoid because etch not exclusively caused by conductive yield it is bad the problem of.
In addition, the first recess region that the preparation method of flush type conductive wires is formed using the upper surface 101 of substrate 1
2, the length of embedment of thick-film conductor distribution (for example, thick copper wiring) can be established；Led using what the upper surface 101 of substrate 1 was formed
Electrical pattern 31 can establish the first stage height of thick-film conductor distribution (for example, thick copper wiring), and recycling protrudes from conductive pattern
First sacrificial pattern 5 of 31 upper surface 301, the second stage height of thick-film conductor distribution (for example, thick copper wiring) can be established.
The preparation method of conductive wires can produce the distribution that Distribution density is high, wiring width is narrow.
The preferable possible embodiments of the present invention are the foregoing is only, not thereby limit to the scope of the claims of the present invention, therefore lift
All equivalence techniques changes done with description of the invention and accompanying drawing content, are both contained in protection scope of the present invention.
Claims (10)
- A kind of 1. preparation method of flush type conductive wires, it is characterised in that including：One substrate is provided；The substrate is subjected to patterned process, to form one first recess region in the upper surface of the substrate；A conductive layer is formed in the upper surface of the substrate, wherein, the conductive layer includes a conductive pattern, the conductive pattern At least insert in first recess region, the conductive pattern protrudes from the upper surface of the substrate, institute in a thickness direction The side wall for stating conductive pattern forms one second recess region, and the part with the conductive layer is thick in second recess region Degree；In one first sacrificial pattern of formation on the conductive layer, wherein, it is recessed that first sacrificial pattern at least inserts described second In groove region, first sacrificial pattern protrudes from the upper surface of the conductive pattern in a thickness direction, and described first sacrifices The side wall of pattern forms one the 3rd recess region, and the conductive pattern of the 3rd recess region exposure part；The conductive layer is subjected to electroplating processes, thickens the conductive pattern that the 3rd recess region is exposed；Remove first sacrificial pattern；AndRemove the conductive layer in second recess region.
- 2. the preparation method of flush type conductive wires according to claim 1, wherein, formed in the upper surface of the substrate In the step of conductive layer, further include：An initial conductive layer is formed to whole face property in the upper surface of the substrate, wherein, the initial conductive layer fills up described One recess region；AndThe initial conductive layer is subjected to patterned process.
- 3. the preparation method of flush type conductive wires according to claim 2, wherein, the initial conductive layer is subjected to figure In the step of caseization processing, further include：One second sacrificial pattern is formed in the initial conductive layer；The initial conductive layer is etched by second sacrificial pattern；AndRemove second sacrificial pattern.
- 4. the preparation method of flush type conductive wires according to claim 2, wherein, the initial conductive layer is subjected to figure In the step of caseization processing, further include：With initial conductive layer described in laser ablation.
- 5. the preparation method of flush type conductive wires according to claim 1, wherein, the conductive layer is carried out at plating Before after the step of reason and the step of removing first sacrificial pattern, further include：Formed on the conductive layer One etch stop layer.
- 6. the preparation method of flush type conductive wires according to claim 5, wherein, remove in second recess region The conductive layer the step of after, further include：Remove the etch stop layer.
- 7. the preparation method of flush type conductive wires according to claim 1, wherein, the conductive pattern is thickened to institute State the height of the first sacrificial pattern in a thickness direction.
- 8. the preparation method of flush type conductive wires according to claim 1, wherein, the side wall of first recess region Close to the side wall of the conductive pattern.
- 9. the preparation method of flush type conductive wires according to claim 1, wherein, the side wall of the conductive pattern and institute The sidewall sections for stating the first sacrificial pattern trim.
- 10. the preparation method of flush type conductive wires according to claim 1, wherein, the method for forming conductive layer Including printing conductive paste.
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| CN201410503152.3A CN105514019B (en) | 2014-09-25 | 2014-09-25 | The preparation method of flush type conductive wires |
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| CN105514019B true CN105514019B (en) | 2017-12-08 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497702A (en) * | 2002-10-22 | 2004-05-19 | 株式会社瑞萨科技 | Manufacturing method of imbedded distributing structure |
| CN102468186A (en) * | 2010-11-15 | 2012-05-23 | 无锡江南计算技术研究所 | Substrate manufacturing method and semiconductor chip packaging method |
| CN103187323A (en) * | 2011-12-28 | 2013-07-03 | 北大方正集团有限公司 | Semiconductor chip and thickening manufacture method of pressure welding block metal layer of semiconductor chip |
| CN103887180A (en) * | 2012-12-20 | 2014-06-25 | 深南电路有限公司 | Leading wire framework processing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060006331A (en) * | 2004-07-15 | 2006-01-19 | 주식회사 하이닉스반도체 | Method of forming a floating gate in a flash memory device |
| JP4400408B2 (en) * | 2004-10-12 | 2010-01-20 | パナソニック電工株式会社 | Formation method of through electrode |
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- 2014-09-25 CN CN201410503152.3A patent/CN105514019B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497702A (en) * | 2002-10-22 | 2004-05-19 | 株式会社瑞萨科技 | Manufacturing method of imbedded distributing structure |
| CN102468186A (en) * | 2010-11-15 | 2012-05-23 | 无锡江南计算技术研究所 | Substrate manufacturing method and semiconductor chip packaging method |
| CN103187323A (en) * | 2011-12-28 | 2013-07-03 | 北大方正集团有限公司 | Semiconductor chip and thickening manufacture method of pressure welding block metal layer of semiconductor chip |
| CN103887180A (en) * | 2012-12-20 | 2014-06-25 | 深南电路有限公司 | Leading wire framework processing method |
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