CN105511221A - Film layer, preparation method of film layer, substrate and display device - Google Patents
Film layer, preparation method of film layer, substrate and display device Download PDFInfo
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- CN105511221A CN105511221A CN201610005364.8A CN201610005364A CN105511221A CN 105511221 A CN105511221 A CN 105511221A CN 201610005364 A CN201610005364 A CN 201610005364A CN 105511221 A CN105511221 A CN 105511221A
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- mask plate
- rete
- edge
- preparation
- transmission region
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Abstract
The invention relates to a preparation method of a film layer. The film layer is etched through a mask plate with a light transition area so that the slope angle of the edge of the film layer can be 30-50 degrees. By means of the method, the slope angle of the edge of the film layer is reduced, and it is effectively avoided that due to the fact that the range difference of the film layer is large, DDS failure is caused by PR glue residues in the subsequent process. By adjusting the area of a light transmitting area, the slope angle of the edge of the film layer can be adjusted. In addition, by means of the mask plate with arc-shaped corners and seams in the corners, the light intensity of the corners is increased, exposure dead corners are omitted, the slope angle of the edge of the film layer at the corners is effectively reduced, the DDS failures caused by PR glue residues are prevented, and the image quality of a display device is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of rete and preparation method thereof, substrate, display device.
Background technology
Thin Film Transistor-LCD (ThinFilmTransistor-LiquidCrystalDisplay, be called for short TFT-LCD) there is the features such as volume is little, low in energy consumption, radiationless, manufacturing cost is relatively low, occupy leading position in current flat panel display market.Thin film transistor (TFT) (ThinFilmTransistor is called for short TFT) array base palte is one of vitals of TFT-LCD.In addition, thin film transistor (TFT) (ThinFilmTransistor, TFT) at such as liquid crystal display (LiquidCrystalDisplay, LCD), Organic Light Emitting Diode (OrganicLightEmittingDiode, on-off element is used as in the flat display apparatus of OLED) display and active-matrix Organic Light Emitting Diode (ActiveMatrixOrganicLightEmittingDiode, AMOLED) display and so on.
Along with the requirement of people to display frame quality is more and more higher, HighPPI product becomes the main product in market gradually, and the raising of PPI adds the quantity of thin film transistor (TFT) TFT, and corresponding driving load can increase, simultaneously due to the impact of stray capacitance, aperture opening ratio also can reduce accordingly; And organic film resin material has the advantage of low-k, add organic film and can reduce product power consumption, increasing opening rate in TFT-LCD technique, also becoming gradually is the prevailing technology that current panel is produced.But organic film resin material film forming thickness is thicker than normal rete, the section difference making organic film is comparatively large, and the impact due to section difference makes in the manufacturing process of thin film transistor (TFT), cause some bad generations, as bad in DDS etc.; And bad just needs that solution is correlated with is optimized from technique and design aspect.
The design of traditional organic film mask plate 3, turning 1 generally adopts right angle cabling design, and also adopts normal wiring configuration at the edge 2 of organic film, and concrete structure as shown in Figure 1.The section difference of the organic film 4 adopting traditional mask plate 3 to prepare is larger, the angle of gradient α at the organic film edge formed is greater than 60 °, also easily forms exposure dead angle at turning 1 place, and the luminous energy of reception is not enough, and photoresist 5 (PR glue) remains when causing subsequent technique to carry out, as shown in Figure 2; Meanwhile, the cabling place, edge of the organic film adopting traditional mask plate 3 to prepare, because the section difference of organic film 4 is larger, easily cause the interference of light and diffraction phenomena when light shield technique is carried out and make light intensity decreasing, in addition, also slightly biased thick at edge PR glue, which results in subsequent technique (1
stiTO & 2
ndwhen ITO) carrying out, organic film 4 sections difference place PR glue 5 remains, and then the metal level 6 that PR glue residual fraction blocks cannot be removed when then etching technics carries out again, residual metal will the generation that causes DDS etc. bad of the adjacent signal wire of conducting lower floor, finally affects picture quality, as shown in Figure 3.
From the above, cause PR glue to remain and be that the angle of gradient exposing rear reservation organic film is bigger than normal with the reason of bad generation, make subsequent technique under-exposed, in order to head it off, can improve from process aspect merely, namely increase exposure and remove residual PR glue, but the easy like this critical size of this process layer that causes changes, follow-up bad risk also can increase.Therefore improvement can only as tentative plan in technique.
Summary of the invention
Technical matters to be solved by this invention is how by improving the structure of mask plate, reduces the angle of gradient at rete edge.
For this purpose, the present invention proposes a kind of preparation method of rete, it is characterized in that, by the mask plate being provided with light transition district, described rete is etched, make the edge angle of gradient of described rete be 30 °-50 °.
Wherein preferably, described light transition district is located at the edge of described mask plate;
Described light transition district comprises evenly distributed multiple transmission region and multiple lightproof area, and described transmission region and described lightproof area are spaced;
Area near the described transmission region of the side, edge of described mask plate is greater than the area of the described lightproof area of the side, edge away from described mask plate;
Area near the described lightproof area of the side, edge of described mask plate is less than the area of the described transmission region of the side, edge away from described mask plate.
Wherein preferably, described transmission region is the vee making lightproof area form denation.
Wherein preferably, described transmission region is the wave-shaped gap being arranged on described light transition district.
Wherein preferably, described transmission region is the through hole being arranged on described light transition district.
Wherein preferably, described through hole is semicircle, circular or rectangle.
Wherein preferably, described transmission region is the gap with the sides aligned parallel of described mask plate.
Wherein preferably, it is characterized in that, the distance between described transmission region is less than exposure machine resolution.
Wherein preferably, the turning of described mask plate is arc.
Wherein preferably, the corner of described mask plate is provided with some slits arranged in parallel.
On the other hand, present invention also offers a kind of rete, adopt above-mentioned preparation method described in any one to be prepared from, the edge angle of gradient of described rete is 30 °-50 °.
Again on the one hand, present invention also offers a kind of substrate comprising above-mentioned rete.
Also have on the one hand, present invention also offers a kind of display device comprising aforesaid substrate.
By adopting Film preparation method provided by the present invention, reducing the angle of gradient at rete edge, effectively prevent because rete section difference is excessive, when causing subsequent technique to carry out, to remain the DDS caused bad for PR glue.By regulating the area of transmission region, the edge angle of gradient of the rete of formation can be regulated.In addition, adopt turning to be the mask plate that arc and corner are provided with slit, increase the light intensity of corner, eliminate exposure dead angle, effectively reduce the edge angle of gradient of the rete of corner, prevent PR glue to remain the DDS caused bad, improve the picture quality of display device.
Accompanying drawing explanation
Can understanding the features and advantages of the present invention clearly by reference to accompanying drawing, accompanying drawing is schematic and should not be construed as and carry out any restriction to the present invention, in the accompanying drawings:
Fig. 1 shows the structural representation of traditional mask plate;
Fig. 2 shows the organic film structural representation adopting traditional mask plate to be formed;
Fig. 3 shows the principle schematic adopting traditional mask plate to cause DDS bad;
Fig. 4 shows the marginal texture schematic diagram of the mask plate of the first embodiment of the present invention;
Fig. 5 shows the marginal texture schematic diagram of the mask plate of the second embodiment of the present invention;
Fig. 6 shows the marginal texture schematic diagram of the mask plate of the third embodiment of the present invention;
Fig. 7 shows the marginal texture schematic diagram of the mask plate of the present invention's the 4th kind of embodiment;
Fig. 8 shows the corner structure schematic diagram of the mask plate of the present invention's five kinds of embodiments;
Fig. 9 shows the film layer structure schematic diagram adopting the mask plate of each embodiment of the present invention to be formed.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the present invention is described in detail.
The invention provides a kind of preparation method of rete, by the mask plate being provided with light transition district, rete is etched, make the edge angle of gradient θ of rete be 30 °-50 °.Described light transition district 9 is located at the edge 2 of described mask plate 3; Described light transition district 9 comprises evenly distributed multiple transmission regions 7 and multiple lightproof area 8, and described transmission region 7 and described lightproof area 8 are spaced; Area near the described transmission region 7 of the side, edge of described mask plate 3 is greater than the area of the described lightproof area 8 of the side, edge away from described mask plate 3; Area near the described lightproof area 8 of the side, edge of described mask plate 3 is less than the area of the described transmission region 7 of the side, edge away from described mask plate 3.The mask plate that rete adopts is manufactured to the present invention below and launch detailed description.
Embodiment 1
The preparation method of rete of the present invention can adopt edge 2 to be as shown in Figure 4 provided with the mask plate 3 in light transition district 9.Wherein preferably, the vee of described transmission region 7 for making lightproof area 8 form denation.The height of vee is c, and gap width is d, and the spacing namely between two denations is d, and wherein more preferably, the distance between described transmission region is less than exposure machine resolution.Namely to ensure that the spacing d between two denations is less than exposure machine resolution.The size of the edge angle of gradient θ of the rete needed for such basis, regulates the size of c and d, changes the size of the luminous energy of rete marginal reception in light shield technological process, as shown in Figure 9, makes the edge angle of gradient θ of rete be reduced to 30 °-50 °.So when preparing organic film, can effectively reduce the angle of gradient θ at organic film edge, preventing because rete section difference is excessive, when causing subsequent technique to carry out, to remain the DDS caused bad for PR glue.
Embodiment 2
Embodiment 2 is substantially the same manner as Example 1, in Film preparation process, adopt the mask plate 3 being provided with light transition district 9, its key distinction is, the described transmission region 7 in the light transition district 9 in embodiment 2 is the gap parallel with the edge 2 of described mask plate 3, as shown in Figure 5, the area of the described transmission region 7 of the side, edge of close described mask plate 3 is greater than the area of the described lightproof area 8 of the side, edge away from described mask plate 3; Area near the described lightproof area 8 of the side, edge of described mask plate 3 is less than the area of the described transmission region 7 of the side, edge away from described mask plate 3.The width in gap is inwardly reduced gradually by edge, and the spacing in gap is less than exposure machine resolution.The spacing of slit is less than exposure machine resolution, by regulating width and the spacing in gap, the edge angle of gradient θ of rete also can be made to be reduced to 30 °-50 °.
Embodiment 3
Embodiment 3 is substantially identical with embodiment 1,2, and in Film preparation process, adopt the mask plate 3 being provided with light transition district 9, its key distinction is, the described transmission region 7 in embodiment 3 is for being arranged on the through hole in described light transition district 9.As shown in Figure 6, described through hole can be semicircle, circular or rectangle.Reduced gradually to the diameter of inner via hole by the edge 2 of mask plate 3, the area near the described transmission region 7 of the side, edge of described mask plate 3 is greater than the area of the described lightproof area 8 of the side, edge away from described mask plate 3; Area near the described lightproof area 8 of the side, edge of described mask plate 3 is less than the area of the described transmission region 7 of the side, edge away from described mask plate 3.The spacing of through hole is less than exposure machine resolution.By regulating the diameter of through hole, the edge angle of gradient θ of rete also can be made to be reduced to 30 °-50 °.
Embodiment 3
Embodiment 4 and embodiment 1-3 are substantially identical, and in Film preparation process, adopt the mask plate 3 being provided with light transition district 9, its key distinction is, the described transmission region 7 in embodiment 4 is for being arranged on the wave-shaped gap in described light transition district 9.As shown in Figure 7, transmission region 7 and lightproof area 8 are spaced, and the area near the described transmission region 7 of the side, edge of described mask plate 3 is greater than the area of the described lightproof area 8 of the side, edge away from described mask plate 3; Area near the described lightproof area 8 of the side, edge of described mask plate 3 is less than the area of the described transmission region 7 of the side, edge away from described mask plate 3.Spacing between wave-shaped gap is less than exposure machine resolution, by regulating height and the spacing of wave-shaped gap, the edge angle of gradient θ of rete also can be made to be reduced to 30 °-50 °.
Embodiment 5
Embodiment 5 is on the basis of embodiment 1-4, the mask plate after improving further is adopted to carry out the preparation of rete, concrete, adopt and be provided with on the basis of mask plate 3 in light transition district 9, further employing turning 1 is the mask plate 3 of arc, the exposure dead angle preventing right angle from causing.As shown in Figure 8, further, turning 1 place of described mask plate 3 is provided with some slits 10 arranged in parallel.By the edge angle of gradient θ regulating the width of slit and the quantity of spacing and slit also can effectively reduce the rete of corner, when preventing subsequent technique from carrying out, to remain the DDS caused bad for PR glue.
Embodiment 6
On the other hand, present invention also offers a kind of rete, the Film preparation method adopting embodiment 1-5 to provide is prepared, and the edge angle of gradient θ of described rete is 30 °-50 °.As shown in Figure 9, the edge angle of gradient θ of the rete that the present invention is formed is less than the edge angle of gradient α of the rete adopting traditional mask plate to be formed, reduce the angle of gradient at rete edge, effectively prevent because rete section difference is excessive, when causing subsequent technique to carry out, to remain the DDS caused bad for PR glue.
Again on the one hand, present invention also offers a kind of substrate, comprise the rete that above-mentioned edge angle of gradient θ is 30 °-50 °.Also have on the one hand, present invention also offers a kind of display device comprising aforesaid substrate.
By adopting Film preparation method provided by the present invention, reducing the angle of gradient θ at rete edge, effectively prevent because rete section difference is excessive, when causing subsequent technique to carry out, to remain the DDS caused bad for PR glue.By regulating the area of transmission region, the edge angle of gradient θ of the rete of formation can be regulated.In addition, adopt turning to be the mask plate that arc and corner are provided with slit, increase the light intensity of corner, eliminate exposure dead angle, effectively reduce the edge angle of gradient θ of the rete of corner, prevent PR glue to remain the DDS caused bad, improve the picture quality of display device.
Although describe embodiments of the present invention by reference to the accompanying drawings, but those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, such amendment and modification all fall into by within claims limited range.
Claims (13)
1. a preparation method for rete, is characterized in that, is etched described rete by the mask plate being provided with light transition district, makes the edge angle of gradient of described rete be 30 °-50 °.
2. the preparation method of rete according to claim 1, is characterized in that,
Described light transition district is located at the edge of described mask plate;
Described light transition district comprises evenly distributed multiple transmission region and multiple lightproof area, and described transmission region and described lightproof area are spaced;
Area near the described transmission region of the side, edge of described mask plate is greater than the area of the described lightproof area of the side, edge away from described mask plate;
Area near the described lightproof area of the side, edge of described mask plate is less than the area of the described transmission region of the side, edge away from described mask plate.
3. the preparation method of rete according to claim 2, is characterized in that, described transmission region is the vee making lightproof area form denation.
4. the preparation method of rete according to claim 2, is characterized in that, described transmission region is the wave-shaped gap being arranged on described light transition district.
5. the preparation method of rete according to claim 2, is characterized in that, described transmission region is the through hole being arranged on described light transition district.
6. the preparation method of rete according to claim 5, is characterized in that, described through hole is semicircle, circular or rectangle.
7. the preparation method of rete according to claim 2, is characterized in that, described transmission region is the gap with the sides aligned parallel of described mask plate.
8. the preparation method of the rete according to claim 2-7 any one, is characterized in that, the distance between described transmission region is less than exposure machine resolution.
9. the preparation method of the rete according to claim 2-7 any one, is characterized in that, the turning of described mask plate is arc.
10. the preparation method of the rete according to claim 2-7 any one, is characterized in that, the corner of described mask plate is provided with some slits arranged in parallel.
11. 1 kinds of retes, adopt the preparation method described in claim 1-10 any one to be prepared from, it is characterized in that, the edge angle of gradient of described rete is 30 °-50 °.
12. 1 kinds of substrates, is characterized in that, comprise rete according to claim 11.
13. 1 kinds of display device, is characterized in that, comprise substrate according to claim 12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610005364.8A CN105511221B (en) | 2016-01-05 | 2016-01-05 | Film layer and preparation method thereof, substrate, display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610005364.8A CN105511221B (en) | 2016-01-05 | 2016-01-05 | Film layer and preparation method thereof, substrate, display device |
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| CN105511221A true CN105511221A (en) | 2016-04-20 |
| CN105511221B CN105511221B (en) | 2019-11-19 |
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| CN106681099A (en) * | 2016-12-20 | 2017-05-17 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN106933023A (en) * | 2017-05-09 | 2017-07-07 | 深圳市华星光电技术有限公司 | A kind of preparation method of light shield and substrate of glass |
| CN107367908A (en) * | 2017-08-18 | 2017-11-21 | 武汉华星光电半导体显示技术有限公司 | Exposure light shield and photoresist graphic method |
| CN108132567A (en) * | 2017-12-28 | 2018-06-08 | 深圳市华星光电技术有限公司 | The via structure and light shield of a kind of array substrate |
| CN108169999A (en) * | 2018-01-02 | 2018-06-15 | 京东方科技集团股份有限公司 | Mask and preparation method thereof, display panel and preparation method thereof |
| CN108227290A (en) * | 2018-01-31 | 2018-06-29 | 京东方科技集团股份有限公司 | Mask plate, the organic protection layer obtained using it and display device |
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| CN110501871A (en) * | 2019-08-13 | 2019-11-26 | 上海华虹宏力半导体制造有限公司 | For defining the photoetching technological method of litho pattern sidewall profile |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102830587A (en) * | 2012-09-11 | 2012-12-19 | 京东方科技集团股份有限公司 | Mask plate, CF (Color Filter), LCD (Liquid Crystal Display) device and manufacturing method |
| CN103345118A (en) * | 2013-07-05 | 2013-10-09 | 深圳市华星光电技术有限公司 | Photomask, glass substrate and manufacturing method of glass substrate |
| CN104714363A (en) * | 2015-03-26 | 2015-06-17 | 南京中电熊猫液晶显示科技有限公司 | Gray-scale mask plate and method for manufacturing liquid crystal display by employing gray-scale mask plate |
-
2016
- 2016-01-05 CN CN201610005364.8A patent/CN105511221B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102830587A (en) * | 2012-09-11 | 2012-12-19 | 京东方科技集团股份有限公司 | Mask plate, CF (Color Filter), LCD (Liquid Crystal Display) device and manufacturing method |
| CN103345118A (en) * | 2013-07-05 | 2013-10-09 | 深圳市华星光电技术有限公司 | Photomask, glass substrate and manufacturing method of glass substrate |
| CN104714363A (en) * | 2015-03-26 | 2015-06-17 | 南京中电熊猫液晶显示科技有限公司 | Gray-scale mask plate and method for manufacturing liquid crystal display by employing gray-scale mask plate |
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| CN106681099A (en) * | 2016-12-20 | 2017-05-17 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN106933023A (en) * | 2017-05-09 | 2017-07-07 | 深圳市华星光电技术有限公司 | A kind of preparation method of light shield and substrate of glass |
| CN107367908A (en) * | 2017-08-18 | 2017-11-21 | 武汉华星光电半导体显示技术有限公司 | Exposure light shield and photoresist graphic method |
| CN108132567A (en) * | 2017-12-28 | 2018-06-08 | 深圳市华星光电技术有限公司 | The via structure and light shield of a kind of array substrate |
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| CN112267092A (en) * | 2020-10-27 | 2021-01-26 | 京东方科技集团股份有限公司 | Mask plate and preparation method thereof |
| US11765961B2 (en) | 2020-10-27 | 2023-09-19 | Boe Technology Group Co., Ltd. | Mask plate with transition region and fabricating method thereof |
| CN113467179A (en) * | 2021-06-23 | 2021-10-01 | 惠科股份有限公司 | Mask, manufacturing method of array substrate and display panel |
| CN113885294A (en) * | 2021-09-17 | 2022-01-04 | 上海华虹宏力半导体制造有限公司 | Gray-scale mask structure |
| CN114574803A (en) * | 2022-02-28 | 2022-06-03 | 云谷（固安）科技有限公司 | Mask, display panel manufacturing method and display panel |
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